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At least 307 records · Page 17

Composition dependence of superconductivity in YBa2(Cu(3-x)Al(x))O(y)

Eleven different compositions in the system YBa2(Cu(3-x)Al(x))O(y) (x = 0 to 0.3) have been synthesized and characterized by electrical resistivity measurements, powder X-ray diffraction, and scanning electron microscopy. The superconducting transition temperature T sub c (onset) was almost unaffected by the presence of alumina due to its limited solubility in YBa2Cu3O(7-x). However, T sub c(R = 0) gradually decreased, and the resistive tails became longer with increasing Al2O3 concentration. This was probably due to formation of BaAl2O4 and other impurity phases from chemical decomposition of the superconducting phase by reaction with Al2O3.

Bansal, N. P.↗

Validation of multi-temperature nozzle flow code NOZNT

A computer code NOZNT (Nozzle in n-Temperatures), which calculates one-dimensional flows of partially dissociated and ionized air in an expanding nozzle, is tested against five existing sets of experimental data. The code accounts for: a) the differences among various temperatures, i.e., translational-rotational temperature, vibrational temperatures of individual molecular species, and electron-electronic temperature, b) radiative cooling, and c) the effects of impurities. The experimental data considered are: 1) the sodium line reversal and 2) the electron temperature and density data, both obtained in a shock tunnel, and 3) the spectroscopic emission data, 4) electron beam data on vibrational temperature, and 5) mass-spectrometric species concentration data, all obtained in arc-jet wind tunnels. It is shown that the impurities are most likely responsible for the observed phenomena in shock tunnels. For the arc-jet flows, impurities are inconsequential and the NOZNT code is validated by numerically reproducing the experimental data.

Park, Chul↗

Solvent Hold Tank Sample Results for MCU-19-569-571 (December 2019), MCU-20-1-28 (January 2020), and MCU-20-29-30-31 (June 2020) (Quarterly Report)

A trend summary of three Solvent Hold Tank (SHT) monthly samples MCU-19-569-570-571 (December 2019), MCU-20-1-28 (January 2020), and MCU-20-29-30-31 (June 2020) are reported. Most of the conclusions are based on the June 2020 SHT sample (MCU-20-29-30-31). Analyses of the June 2020 SHT sample indicated that the Modifier (Cs-7SB) and the Extractant (MaxCalix) concentrations were above their nominal recommended concentrations (169,000 mg/L and 46,900 mg/L respectively) by 6% and 7% respectively. The Suppressor (N,N’,N”–tris(3,7-dimethyloctyl)guanidine or TiDG) concentration has remained at 833 ± 16 mg/L, but it is above the minimum recommended concentration (479 mg/L). The Semi-Volatile Organic Analysis (SVOA) and FT-HNMR did not detect any organic impurities. Another impurity observed in the samples was mercury. Based on the June 2020 SHT sample, up to 23 ± 5 micrograms of mercury per gram of solvent (or 19 ± 4 mg/L) was detected. The mercury concentration steadily decreased from 34.8 ug/g solvent (or 21.9 mg/L) in the December 2019 SHT sample to 34.8 ug/g solvent (or 19 mg/L) in the June 2020 SHT sample. The gamma concentration (~3.33E4 dpm/mL) measured in the June 2020 SHT samples was consistent with previous values observed when MCU was idle (for example, between February 2017 and August 2017). If additional SHT samples become available, the laboratory will continue to monitor the quality of the solvent for any new impurities or degradation of the solvent components.

12 MANAGEMENT OF RADIOACTIVE AND NON-RADIOACTIVE W↗

Chemical Characterization and Thermal Stressing Studies of Perfluorohexane Fluids for Space-Based Applications

Perfluorohexane (PFH), C6F14, is a perfluorocarbon fluid. Several PFH fluids with different isomer concentrations were evaluated for use in an upcoming NASA space experiment. Samples tested included two commercially obtained high-purity n-perfluorohexane (n-PFH) fluids and a technical grade mixture of C6F14 branched and linear isomers (FC-72(TradeMark)). These fluids were evaluated for exact chemical composition, impurity purity and high temperature degradation behavior (pyrolysis). Our investigation involved simulated thermal stressing studies of PFH fluids under conditions likely to occur in the event of an atmospheric breach within the International Space Station (ISS) and subsequent exposure of the vapors to the high temperature and catalyst present in its Trace Contaminant Control Subsystem (TCCS). Exposure to temperatures in the temperature range of 200-450 C in an inert or oxidizing atmosphere, with and without the presence of catalyst was investigated. The most aggressive conditions studied were exposure of PFH vapors to 450 C in air and in the presence of TCCS (palladium) catalyst. Gas chromatography-mass spectrometry (GC-MS) and gas chromatography (GC) analyses were conducted on the perfluorohexane samples before and after pyrolysis. The FC-72 and n-PFH samples showed no significant degradation following pyrolysis even under the most aggressive study conditions. Some trace level impurities associated with the PFH samples such as linear perfluorocarbon monohydrides or monoiodides were destroyed by pyrolysis at the upper limit. Other trace level impurities such as olefinic or cycloolefinic perfluorocarbons were converted into oxidation products by pyrolysis. The purity of PFH following pyrolysis actually increased slightly as a consequence since these trace contaminants were effectively scrubbed from the samples. However, since the initial concentrations of the thermally-impacted impurities were so low, the net effect was trivial. A potential byproduct of exposure of perfluorohexane fluids to high temperatures is the production of perfluoroisobutene (PFiB), which is extremely toxic. An ultra-high sensitivity PFiB-specific analysis based on GC-MS with negative ion chemical ionization (NICI) detection was used to evaluate the samples following thermal stressing. The perfluorohexanes examined here under conditions reflective of the ISS TCCS environment showed no signs of PFiB production with an analytical detection limit of 10 part per billion (ppb v/v).

Arnold, William A.↗

Adhesion of impure ice on surfaces

The undesirable buildup of ice can compromise the operational safety of ships in the Arctic to high-flying airplanes, thereby having a detrimental impact on modern life in cold climates. The obstinately strong adhesion between ice and most functional surfaces makes ice removal an energetically expensive and dangerous affair. Hence, over the past few decades, substantial efforts have been directed toward the development of passive ice-shedding surfaces. Conventionally, such research on ice adhesion has almost always been based on ice solidified from pure water. However, in all practical situations, freezing water has dissolved contaminants; ice adhesion studies of which have remained elusive thus far. Here, in this work, we cast light on the fundamental role played by various impurities (salt, surfactant, and solvent) commonly found in natural water bodies on the adhesion of ice on common structural materials. We elucidate how varying freezing temperature & contaminant concentration can significantly alter the resultant ice adhesion strength making it either super-slippery or fiercely adherent. The entrapment of impurities in ice changes with the rate of freezing and ensuing adhesion strength increases as the cooling temperature decreases. We discuss the possible role played by the in situ generated solute enriched liquid layer and the nanometric water-like disordered ice layer sandwiched between ice and the substrate behind these observations. Our work provides useful insights into the elementary nature of impure water-to-ice transformation and contributes to the knowledge base of various natural phenomena and rational design of a broad spectrum of anti-icing technologies for transportation, infrastructure, and energy systems.

36 MATERIALS SCIENCE↗

Reducing Dark Conductivity of Cesium Tin Halide Perovskites with Donor Doping

The inorganic tin halide perovskites (such as Cs Sn Br 3 and Cs Sn I 3 ) exhibit high hole concentrations, which have been attributed to the presence of intrinsic defects such as cation vacancies. Despite their promise as photovoltaic materials, this high intrinsic conductivity limits deployment. Using hybrid density functional theory, we examine the impact of these intrinsic defects on the electronic properties of Cs Sn Br 3 and Cs Sn I 3 . We find that tin and cesium vacancies have low formation energies, especially under Sn -poor conditions, in agreement with prior work, and that the presence of these native acceptor defects can lead to high hole concentrations. However, effective donor doping of these systems can be obtained via Sc or Y incorporation. These impurities substitute on the Sn site, where they act as single donors. By examining the formation energy of these dopants versus the native defects, we show that Sc or Y doping should lead to a strong compensation, reducing hole concentrations under Sn -rich conditions. Published by the American Physical Society 2025

Lyons, John L. (ORCID:0000000180233055)↗

Titanium in silicon as a deep level impurity

Titanium inserted in silicon by diffusion or during Czochralski ingot growth is electrically active to a concentration level of about 4 x 10 to the 14th per cu cm. It is reported that Hall measurements after diffusion show conversion of lightly doped p-type Si to n-type due to a Ti donor level at E sub c -0.22 eV. In addition, in DLTS measurements of n(+)p structures this level shows as an electron (minority carrier) trap at E sub c -0.26 eV with an electron capture cross section of about 3 x 10 to the -15th per sq cm at 300 K. Finally, a Ti electrically active concentration of about 1.35 x 10 to the 13th per cu cm in p type Si results in a minority carrier (electron) lifetime of 50 nsec at 300 K.

Chen, J.-W.↗

Imaging Reconfigurable Molecular Concentration on a Graphene Field-Effect Transistor

The spatial arrangement of adsorbates deposited onto a clean surface under vacuum typically cannot be reversibly tuned. Here we use scanning tunneling microscopy to demonstrate that molecules deposited onto graphene field-effect transistors (FETs) exhibit reversible, electrically tunable surface concentration. Continuous gate-tunable control over the surface concentration of charged F 4 TCNQ molecules was achieved on a graphene FET at T = 4.5K. This capability enables the precisely controlled impurity doping of graphene devices and also provides a new method for determining molecular energy level alignment based on the gate-dependence of molecular concentration. Gate-tunable molecular concentration is explained by a dynamical molecular rearrangement process that reduces total electronic energy by maintaining Fermi level pinning in the device substrate. Finally, the molecular surface concentration is fully determined by the device back-gate voltage, its geometric capacitance, and the energy difference between the graphene Dirac point and the molecular LUMO level.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

Elucidating the Interfacial Effects of Nonmetallic Elements on the Dehydrogenation Behavior of Nanoconfined NaAlH 4 in Zeolite-Templated Carbon

Confining materials within nanoscale volumes alters their physical and chemical properties, with positive consequences for energy storage, conversion, and catalysis. The pore structure and composition of scaffolds are essential variables for optimizing these properties, with carbon-based materials being preferred due to their tunable porous structures and chemical versatility. This study investigates the influence of surface functional groups on the dehydrogenation kinetics of nanoconfined NaAlH4 using zeolite-templated carbons (ZTCs). Here we focus on oxygen functional groups commonly present as intrinsic impurities on carbon scaffolds, analyzing three ZTC scaffolds to determine how their concentrations and configurations affect dehydrogenation behavior. Our findings reveal that carbonyl groups enhance charge transfer and destabilize Al–H bonds more effectively than ether or phenol groups. This indicates that the type of oxygen functional group is more critical than the quantity, highlighting the importance of properly tailoring oxygen defects to improve hydrogen storage performance in nanoconfined systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

The effect of ICRH and NBI on tungsten transport in neon edge radiation cooled discharges in TEXTOR

Tungsten is planned to be the plasma-facing material for the main chamber and divertor in future devices like ITER, SPARC, and DTT. To address risks associated with tungsten, R&D is being carried out on various toroidal confinement devices. One particular research question is related to the optimum heating mix for ITER. To investigate the influence of the heating scheme on the release and transport of tungsten, a comparison of neutral beam injection (NBI) and ion cyclotron resonance frequency (ICRF) heating was carried out in TEXTOR tungsten test limiter experiments. The experiments were performed under standard L-mode conditions and in radiative improved-mode operation with neon seeding and boronized walls covering the graphite plasma-facing components. The plasma was heated with hydrogen or deuterium NBI alone or with deuterium NBI in combination with H-minority, ion cyclotron resonance heating. A movable solid tungsten limiter was inserted through a limiter lock system into the edge plasma. The impurity release from this limiter was evaluated from visible spectroscopy. The tungsten concentrations in the plasma core were determined by extreme ultraviolet spectroscopy and bolometry. With deuterium NBI alone, strong central radiation and accumulation of W was observed. This can, however, be avoided by adding ICRF heating.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

The Influence of C and Si on the Flow Behavior of NiAl Single Crystals

Alloys based on the intermetallic compound NiAl are considered potential replacements for Ni and Co-based superalloys in high temperature structural applications due to their excellent oxidation resistance, low densities, high thermal conductivities, and increased melting points. Unfortunately, NiAl exhibits low tensile ductility at room temperature and low strengths at elevated temperatures which have combined to hinder its development. Recent efforts, have revealed that NiAl in the presence of sufficient solute levels, is subject to the phenomenon of strain aging which manifests itself as: sharp yield points, abnormally low strain rate sensitivities (SRS), plateaus or peaks in yield stress and work hardening rate as a function of temperature, flow stress transients upon an upward change in strain rate, reduced tensile elongations at elevated temperatures, and serrated stress-strain curves. Though recent efforts via either alloying or the removal of interstitial impurities, have resulted in consistent room-temperature tensile elongations exceeding 5% and the elimination of serrated flow, the effects of particular substitutional and interstitial elements and the mechanisms by which they might enhance or hinder the mechanical properties remain unknown. Consequently, the purpose of the present paper is to provide a preliminary assessment of the influence of common substitutional and interstitial impurities on the deformation behavior of NiAl. To accomplish this goal a series of NiAl single crystal alloys containing various interstitial solutes were prepared and their mechanical properties were evaluated between 77 and 1100 K. Because Si is a common impurity in conventional purity single crystals grown by the Bridgman method, Si concentrations were also varied in order to determine the influence of this element.

Weaver, M. L.↗

Compound semi-conductors and controlled doping thereof

A method of controlling the amount of impurity incorporation in a crystal grown by a chemical vapor deposition process. Conducted in a growth chamber, the method includes the controlling of the concentration of the crystal growing components in the growth chamber to affect the demand of particular growth sites within the growing crystal thereby controlling impurity incorporation into the growth sites.

Larkin, David J.↗

Impurity Control in Catalyst Design: The Role of Sodium in Promoting and Stabilizing Co and Co 2 C for Syngas Conversion

The design of supported heterogeneous catalysts requires a detailed understanding of the structure and chemistry of the active surface. Although the chemical components of the active phase, support material, and process feed are typically considered to be the most important factors governing catalyst structure and performance, many common commercial supports contain trace impurities, which can have profound effects on catalyst properties. In this work, we study silica–supported cobalt–based catalysts, which are widely used in syngas conversion to value–added products. Supported metallic Co is a commercial Fischer–Tropsch catalyst, whereas Co 2 C has shown promise for the direct conversion of syngas to higher oxygenates. This study examines the effects of Na, a commonly detected support impurity and a frequently used promoter, on the structure and reactivity of Co and Co 2 C. We show that trace Na impurities significantly decrease catalyst activity of supported metallic Co, and that high Na concentrations result in Co 2 C formation and a loss in Fischer–Tropsch activity. However, in Co 2 C catalysts, Na plays an important role in stabilizing the Co 2 C phase, but excess Na decreases catalyst activity. We use insitu X–ray absorption spectroscopy to study Co 2 C formation and decomposition in the Na–free catalyst under carburization and reaction conditions. Lastly, the work reveals the importance of carefully controlling alkali metal content, particularly at trace levels, in catalyst design.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Spectroscopy of GR1 centers in synthetic diamonds

We report on the spectroscopic characterization, absorption saturation, and excited-state dynamics of GR1 centers in synthetic diamonds. The non-linear optical measurements reveal an efficient bleaching of the GR1 center’s ground level under ns-pulsed 633 nm excitation. The maxima of absorption and emission cross sections were estimated to be 4.5 × 10 −17 cm 2 and 9 × 10 −17 cm 2 at 630 nm and 780 nm, respectively. The radiative lifetime of the excited level was estimated to be 8.5 ns. The 658 nm probe kinetics uncovered relaxation of 1 T 2 excited level going predominantly to a metastable state with a lifetime of 220 μs. An induced absorption detected with the use of a highly concentrated diamond sample could be due to up-conversion and photoionization processes in additional impurity-vacancy center with absorption at the short-wavelength tail of GR1. The results presented here indicate that synthetic diamonds with GR1 centers could serve as near infrared gain media or passive Q-switchers for laser cavities over the 633–750 nm spectral range. Optimization of the center concentration and the crystal parameters are required to minimize the induced absorption at the lasing wavelengths.

36 MATERIALS SCIENCE↗

Segregation Coefficients of Impurities in Selenium by Zone Refining

The purification of Se by zone refining process was studied. The impurity solute levels along the length of a zone-refined Se sample were measured by spark source mass spectrographic analysis. By comparing the experimental concentration levels with theoretical curves the segregation coefficient, defined as the ratio of equilibrium concentration of a given solute in the solid to that in the liquid, k = x(sub s)/x(sub l) for most of the impurities in Se are found to be close to unity, i.e., between 0.85 and 1.15, with the k value for Si, Zn, Fe, Na and Al greater than 1 and that for S, Cl, Ca, P, As, Mn and Cr less than 1. This implies that a large number of passes is needed for the successful implementation of zone refining in the purification of Se.

Su, Ching-Hua↗

IVGEN Post Flight Analysis

The Intravenous Fluid Generation (IVGEN) Experiment was a technology demonstration experiment that purified ISS potable water, mixed it with salt, and transferred it through a sterilizing filter. On-orbit performance was verified as appropriate and two 1.5 l bags of normal saline solution were returned to earth for post-flight testing by a FDA certified laboratory for compliance with United States Pharmacopiea (USP) standards. Salt concentration deviated from required values and an analysis identified probable causes. Current efforts are focused on Total Organic Content (TOC) testing, and shelf life.The Intravenous Fluid Generation (IVGEN) Experiment demonstrated the purification of ISS potable water, the mixing of the purified water with sodium chloride, and sterilization of the solution via membrane filtration. On-orbit performance was monitored where feasible and two 1.5-liter bags of normal saline solution were returned to earth for post-flight testing by a FDA-registered laboratory for compliance with United States Pharmacopeia (USP)standards [1]. Current efforts have been focused on challenge testing with identified [2] impurities (total organic-carbon), and shelf life testing. The challenge testing flowed known concentrations of contaminants through the IVGEN deionizing cartridge and membrane filters to test their effectiveness. One finding was that the filters and DI-resin themselves contribute to the contaminant load during initial startup, suggesting that the first 100 ml of fluid be discarded. Shelf life testing is ongoing and involves periodic testing of stored DI cartridges and membrane filters that are capped and sealed in hermetic packages. The testing is conducted at six month intervals measuring conductivity and endotoxins in the effluent. Currently, the packaging technique has been successfully demonstrated for one year of storage testing. The USP standards specifies that the TOC be conducted at point of generation as opposed to point of consumption. Samples were generated and shipped to an FDA facility however, testing determined that the samples failed the TOC specification with most likely due to leaching from the sample container. Shelf life testing is examining packaging techniques and periodic testing of samples of DI cartridges that are capped and sealed in hermetic packages. Periodic testing of the purified water output will be conducted at six month intervals.

microgravity applications↗

Interpretative transport modeling of the WEST boundary plasma: main plasma and light impurities

Understanding impurity transport in tokamak plasmas is crucial to control radiative losses and material migration in future magnetic fusion reactors. In this work we deploy the SolEdge2D-EIRENE code to model the boundary plasma in a WEST discharge, satisfactorily reproducing measurements of both upstream and divertor plasma conditions. Additionally, the spatial distribution of oxygen, studied here as a representative light impurity, is compared to vacuum ultraviolet spectroscopy measurements acquired with an oscillating line of sight. The simulation captures a key feature of the experiment, namely a factor of sime2 higher oxygen brightness in the inner divertor region compared to the outer one. This spatial asymmetry in oxygen concentration is interpreted by analyzing the balance of friction forces and thermal gradient forces that the light impurity exchanges with the main plasma.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Defect control strategies for Al 1- x Gd x N alloys

Tetrahedrally bonded III-N and related alloys are useful for a wide range of applications from optoelectronics to dielectric electromechanics. Heterostructural AlN-based alloys offer unique properties for piezoelectrics, ferroelectrics, and other emerging applications. Atomic-scale point defects and impurities can strongly affect the functional properties of materials, and therefore, it is crucial to understand the nature of these defects and the mechanisms through which their concentrations may be controlled in AlN-based alloys. In this study, we employ density functional theory with alloy modeling and point defect calculations to investigate native point defects and unintentional impurities in Al 1-x Gd x N alloys. Among the native defects that introduce deep midgap states, nitrogen vacancies (V N ⁠) are predicted to be in the highest concentration, especially under N-poor growth conditions. We predict and experimentally demonstrate that V N formation can be suppressed in thin films through growth in N-rich environments. We also find that Al 1-x Gd x N alloys are prone to high levels of unintentional O incorporation, which indirectly leads to even higher concentrations of deep defects. Growth under N-rich/reducing conditions is predicted to minimize and partially alleviate the effects of O incorporation. The results of this study provide valuable insights into the defect behavior in wurtzite nitride-based alloys, which can guide their design and optimization for various applications.

36 MATERIALS SCIENCE↗