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American-Made Challenges: Acoustic Cleaving of Gallium Arsenide for Next Generation Photovoltaic: Cooperative Research and Development Final Report, CRADA Number CRD-19-00831
To evaluate the potential of Sonic Wafering(TM), a new manufacturing method that may lower the cost of high-efficiency photovoltaic materials. This work is to be conducted in support of the Department of Energy’s American Made Challenges Solar Prize.
Vertical Gallium Nitride (GaN) Transistors For Extreme Environments
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Gallium Arsenide X-ray Photodiodes for Ultrafast Physics Applications.
Abstract not provided.
Vertical Gallium nitride transistors for extreme environment operation
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Predictions for Yellow Luminescence In Cubic Gallium Nitride Under Pressure.
Abstract not provided.
Ultra-Wide-Bandgap Aluminum Gallium Nitride for Power-Conversion and Radio-Frequency Applications.
Abstract not provided.
Investigating Lock On in Gallium Nitride Photoconductive Solid State Switches.
Abstract not provided.
Interface Trap State Analysis of Gate Dielectrics on Gallium Nitride and Silicon Carbide using a Novel Quasi-Static CV Technique.
Abstract not provided.
Interface Trap State Analysis of Gate Dielectrics on Gallium Nitride and Silicon Carbide using a Novel Quasi-Static CV Technique.
Abstract not provided.
The Gallium Anomaly and the BEST Experiment [Slides]
The measurements of the charged-current capture rate of neutrinos on 71 Ga from strong radioactive sources have yielded results below those expected, based on the known strength of the principal transition supplemented by theory.
Investigating Operation Modes in Gallium Nitride Photoconductive Switches
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New Concepts for a High Power 805 MHz RF Amplifier for LANSCE using Gallium Nitride Semiconductors
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Advanced Design Concepts for Vertical Gallium Nitride MOSFETs
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Total Ionizing Dose Effects on Gallium Oxide MOSFETs
Poster showing TID data on AFRL Ga2O3 MOSFETs, the mechanisms behind the effects, and some simulations in TCAD
Using the Atomistically Informed Device Engineering (AIDE) Method to Identify Experimentally "Invisible" Defects---The Mystery of the Ga Vacancy in Gallium Arsenide
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