Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “diode effects”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

Whiskerless Schottky diode

A Schottky diode for millimeter and submillimeter wave applications is comprised of a multi-layered structure including active layers of gallium arsenide on a semi-insulating gallium arsenide substrate with first and second insulating layers of silicon dioxide on the active layers of gallium arsenide. An ohmic contact pad lays on the silicon dioxide layers. An anode is formed in a window which is in and through the silicon dioxide layers. An elongated contact finger extends from the pad to the anode and a trench, preferably a transverse channel or trench of predetermined width, is formed in the active layers of the diode structure under the contact finger. The channel extends through the active layers to or substantially to the interface of the semi-insulating gallium arsenide substrate and the adjacent gallium arsenide layer which constitutes a buffer layer. Such a structure minimizes the effect of the major source of shunt capacitance by interrupting the current path between the conductive layers beneath the anode contact pad and the ohmic contact. Other embodiments of the diode may substitute various insulating or semi-insulating materials for the silicon dioxide, various semi-conductors for the active layers of gallium arsenide, and other materials for the substrate, which may be insulating or semi-insulating.

Bishop, William L.↗
NASA NTRS2001

Concentration Field of Reactants and Products Species in a Reacting Vortex Ring

The proposed paper will present experimental and numerical results on the concentration fields of both reactants and products species in a reacting vortex ring that is generated from the interaction between a diffusion flame and a laminar vortex ring. Flame-vortex interactions are canonical configurations used to study the underlying processes occurring in complicated turbulent reacting flows. This type of configuration contains many of the fundamental aspects of the coupling between fluid dynamics and combustion that could be investigated with more controllable conditions than are possible under direct investigations of turbulent flames. The current configuration has been studied experimentally by Chen and Dahm and Chen et al. under microgravity conditions, and by Park and Shin, and You et al. under normal gravity conditions. This configuration is similar to that used in the analyses of Karagozian and Manda of their 2-D vortex pair in which both fuel and entrained oxidizer are present. The vortex ring used in this study is generated by issuing methane into an air environment through the exit of an axisymmetric nozzle. The experiments were conducted under microgravity conditions in order to remove the undesirable effects of buoyancy that can affect both the flame structure and ring dynamics resulting in possibly asymmetric and nonrepeatable interactions. The experimental technique of diode laser wavelength modulation spectroscopy (WMS) is used to measure concentration fields of reactants, CH4 and O2, products, H2O, CO2, OH, and temperature fields which can be inferred from either line pairs of O2 or OH lines. This technique has been investigated previously by Silver and Bomse et al. This is the first time that the technique has been applied to reacting vortex rings under microgravity conditions. The effect of ring circulation and fuel volume on the species concentration fields will be investigated. The experimental results will be compared to the current numerical results, and used to validate the numerical studies. In addition, the existence of burned cores during the interactions will be determined, and the increase in reactant consumption with increased ring circulation will be examined. Numerical studies were also conducted by solving the Navier-Stokes and mixture fraction equations with the assumptions of unity Lewis and Schmidt numbers. Equilibrium chemistry and flamelet libraries were used to obtain the temperature and species mass fraction fields. The numerical results will serve as guidelines in conducting the experimental studies. Ring circulation and fuel volume effects on the interactions and species concentration fields will be investigated and compared to experimental results.

Chen, Shin-Juh↗
NASA NTRS1986

Reliability models applicable to space telescope solar array assembly system

A complex system may consist of a number of subsystems with several components in series, parallel, or combination of both series and parallel. In order to predict how well the system will perform, it is necessary to know the reliabilities of the subsystems and the reliability of the whole system. The objective of the present study is to develop mathematical models of the reliability which are applicable to complex systems. The models are determined by assuming k failures out of n components in a subsystem. By taking k = 1 and k = n, these models reduce to parallel and series models; hence, the models can be specialized to parallel, series combination systems. The models are developed by assuming the failure rates of the components as functions of time and as such, can be applied to processes with or without aging effects. The reliability models are further specialized to Space Telescope Solar Arrray (STSA) System. The STSA consists of 20 identical solar panel assemblies (SPA's). The reliabilities of the SPA's are determined by the reliabilities of solar cell strings, interconnects, and diodes. The estimates of the reliability of the system for one to five years are calculated by using the reliability estimates of solar cells and interconnects given n ESA documents. Aging effects in relation to breaks in interconnects are discussed.

Patil, S. A.↗
NASA NTRS1981

Bypass diode integration

Protective bypass diodes and mounting configurations which are applicable for use with photovoltaic modules having power dissipation requirements in the 5 to 50 watt range were investigated. Using PN silicon and Schottky diode characterization data on packaged diodes and diode chips, typical diodes were selected as representative for each range of current carrying capacity, an appropriate heat dissipating mounting concept along with its environmental enclosure was defined, and a thermal analysis relating junction temperature as a function of power dissipation was performed. In addition, the heat dissipating mounting device dimensions were varied to determine the effect on junction temperature. The results of the analysis are presented as a set of curves indicating junction temperature as a function of power dissipation for each diode package.

Shepard, N. F., Jr.↗
NASA NTRS1968

Guidance and control research

Effective work function of metal contacts to vacuum cleaved photoconducting cadmium sulfide, Curie point switching experiments, and germanium diodes for noise measurements

Source record↗
NASA NTRS1977

Status of research on advanced thermionic converters

It is shown that it is possible to controllably and continuously elevate the electron temperature in the plasmatron thermionic energy converter from the emitter temperature to the maintenance electron temperature for the diode arc mode. This ability and the apparent validity of an elementary analytical model of the plasma should make possible the optimization and evaluation of operation under strong ionization conditions for which the plasma resistance should be acceptably low. Measurement of the vacuum space charge arising from the emission from a surface in cesium vapor indicates the presence of a substantial negative ion emission current. Apparatus has been constructed for identifying and directly measuring the flux of positive, negative and neutral species emitted from an electrode surface in a cesium vapor diode. The primary purpose of the investigation is to determine the influence of negative ion emission on the effective work function of thermionic converter electrodes. Initial data indicate the presence of H(-), Cs(-) and possibly C(-) and CH(-).

Hatch, G. L.↗
NASA NTRS1978

Stable low noise voltage source

Hum and noise on power sources can have a significant effect on system noise. Filtering to achieve low hum and noise is accomplished at low current levels. The diode regulator circuit is described which is ideal for this type of filtering. Hum and noise rejection is achieved with good output voltage stability in a small, low-cost, reliable circuit.

Lutes, G. F.↗
NASA NTRS1980

Solar power satellite system definition study. Volume 1: Executive summary, phase 3

Results of a three phase study of the Solar Power Satellite System are summarized. Various options and alternate systems were considered and the following conclusions were reached: antenna mounted solid state transmitters are potentially as cost effective as the klystron approach, althrough limited to 2500 megawatts net output; the free electron laser and optical diode laser appear most promising for laser power transmission; ground antenna siting need not be restricted to below 35 degrees of latitude; and nonrecurring cost reductions attainable by using a smaller Heavy Lift Launch Vehicle are highly attractive.

Source record↗
NASA NTRS1995

High Density Memory Based on Quantum Device Technology

We explore the feasibility of ultra-high density memory based on quantum devices. Starting from overall constraints on chip area, power consumption, access speed, and noise margin, we deduce boundaries on single cell parameters such as required operating voltage and standby current. Next, the possible role of quantum devices is examined. Since the most mature quantum device, the resonant tunneling diode (RTD) can easily be integrated vertically, it naturally leads to the issue of 3D integrated memory. We propose a novel method of addressing vertically integrated bistable two-terminal devices, such as resonant tunneling diodes (RTD) and Esaki diodes, that avoids individual physical contacts. The new concept has been demonstrated experimentally in memory cells of field effect transistors (FET's) and stacked RTD's.

vanderWagt, Paul↗
NASA NTRS2004

Green-light supplementation for enhanced lettuce growth under red- and blue-light-emitting diodes

Plants will be an important component of future long-term space missions. Lighting systems for growing plants will need to be lightweight, reliable, and durable, and light-emitting diodes (LEDs) have these characteristics. Previous studies demonstrated that the combination of red and blue light was an effective light source for several crops. Yet the appearance of plants under red and blue lighting is purplish gray making visual assessment of any problems difficult. The addition of green light would make the plant leave appear green and normal similar to a natural setting under white light and may also offer a psychological benefit to the crew. Green supplemental lighting could also offer benefits, since green light can better penetrate the plant canopy and potentially increase plant growth by increasing photosynthesis from the leaves in the lower canopy. In this study, four light sources were tested: 1) red and blue LEDs (RB), 2) red and blue LEDs with green fluorescent lamps (RGB), 3) green fluorescent lamps (GF), and 4) cool-white fluorescent lamps (CWF), that provided 0%, 24%, 86%, and 51% of the total PPF in the green region of the spectrum, respectively. The addition of 24% green light (500 to 600 nm) to red and blue LEDs (RGB treatment) enhanced plant growth. The RGB treatment plants produced more biomass than the plants grown under the cool-white fluorescent lamps (CWF treatment), a commonly tested light source used as a broad-spectrum control.

Non-NASA Center↗
NASA NTRS2002

Methods for growth of relatively large step-free SiC crystal surfaces

A method for growing arrays of large-area device-size films of step-free (i.e., atomically flat) SiC surfaces for semiconductor electronic device applications is disclosed. This method utilizes a lateral growth process that better overcomes the effect of extended defects in the seed crystal substrate that limited the obtainable step-free area achievable by prior art processes. The step-free SiC surface is particularly suited for the heteroepitaxial growth of 3C (cubic) SiC, AlN, and GaN films used for the fabrication of both surface-sensitive devices (i.e., surface channel field effect transistors such as HEMT's and MOSFET's) as well as high-electric field devices (pn diodes and other solid-state power switching devices) that are sensitive to extended crystal defects.

Neudeck, Philip G.↗
NASA NTRS2000

Temperature Distribution Within a Defect-Free Silicon Carbide Diode Predicted by a Computational Model

Most solid-state electronic devices diodes, transistors, and integrated circuits are based on silicon. Although this material works well for many applications, its properties limit its ability to function under extreme high-temperature or high-power operating conditions. Silicon carbide (SiC), with its desirable physical properties, could someday replace silicon for these types of applications. A major roadblock to realizing this potential is the quality of SiC material that can currently be produced. Semiconductors require very uniform, high-quality material, and commercially available SiC tends to suffer from defects in the crystalline structure that have largely been eliminated in silicon. In some power circuits, these defects can focus energy into an extremely small area, leading to overheating that can damage the device. In an effort to better understand the way that these defects affect the electrical performance and reliability of an SiC device in a power circuit, the NASA Glenn Research Center at Lewis Field began an in-house three-dimensional computational modeling effort. The goal is to predict the temperature distributions within a SiC diode structure subjected to the various transient overvoltage breakdown stresses that occur in power management circuits. A commercial computational fluid dynamics computer program (FLUENT-Fluent, Inc., Lebanon, New Hampshire) was used to build a model of a defect-free SiC diode and generate a computational mesh. A typical breakdown power density was applied over 0.5 msec in a heated layer at the junction between the p-type SiC and n-type SiC, and the temperature distribution throughout the diode was then calculated. The peak temperature extracted from the computational model agreed well (within 6 percent) with previous first-order calculations of the maximum expected temperature at the end of the breakdown pulse. This level of agreement is excellent for a model of this type and indicates that three-dimensional computational modeling can provide useful predictions for this class of problem. The model is now being extended to include the effects of crystal defects. The model will provide unique insights into how high the temperature rises in the vicinity of the defects in a diode at various power densities and pulse durations. This information also will help researchers in understanding and designing SiC devices for safe and reliable operation in high-power circuits.

Kuczmarski, Maria A.↗
NASA NTRS1978

The impact of defects on the photovoltaic potential of RTR silicon ribbon

Silicon ribbon grown at a high rate by the ribbon-to-ribbon (RTR) method contains a variety of defects and can exhibit an unusual dendritic morphology. This paper is a study of the effect of the defect structure and dendritic morphology on the photovoltaic potential of RTR ribbon. Defects found in RTR ribbon include grain boundaries, twin planes, stacking faults and dislocations. The electrical activity of these defects is investigated by measuring the diffusion length in the ribbon; by fabricating small area diodes on the ribbon and evaluating their photoresponse; and by using a scanning electron microscope in the electron beam induced current mode. It is concluded that although grain boundaries serve very effectively as recombination centers, they do not occur frequently enough in RTR ribbons to significantly affect the generation current. Dislocation densities up to 1,000,000/sq cm can be tolerated without strongly reducing the photoresponse. Similarly, linear boundaries such as twin planes or stacking faults do not affect the cell performance up to densities of 1000/sq cm.

Baghdadi, A.↗
NASA NTRS1981

Semiconductor-ferroelectric nonvolatile memory using anomalous high photovoltages in ferroelectric ceramics

A small ferroelectric ceramic element is used with an insulating gate transistor and two diodes as an electrically addressed, nonvolatile memory device which is read out nondestructively. The device uses the anomalous photovoltaic effect in ferroelectric ceramics, an effect in which the polarity and magnitude of photovoltages depend on the direction and magnitude of remanent polarization. Experimental results give memory characteristics. The device could be programmed with pulses as short as 200 ns. There is long-time retention of stored data.

Brody, P. S.↗
NASA NTRS1991

Development of silicon carbide semiconductor devices for high temperature applications

The semiconducting properties of electronic grade silicon carbide crystals, such as wide energy bandgap, make it particularly attractive for high temperature applications. Applications for high temperature electronic devices include instrumentation for engines under development, engine control and condition monitoring systems, and power conditioning and control systems for space platforms and satellites. Discrete prototype SiC devices were fabricated and tested at elevated temperatures. Grown p-n junction diodes demonstrated very good rectification characteristics at 870 K. A depletion-mode metal-oxide-semiconductor field-effect transistor was also successfully fabricated and tested at 770 K. While optimization of SiC fabrication processes remain, it is believed that SiC is an enabling high temperature electronic technology.

Matus, Lawrence G.↗
NASA NTRS1995

A final look at LDEF electro-optic systems components

Postrecovery characteristics of LDEF electro-optic components from the GTRI tray are compared with their prelaunch characteristics and with the characteristics of similar components from related experiments. Components considered here include lasers, light-emitting diodes, semiconducting radiation detectors and arrays, optical substrates, filters, and mirrors, and specialized coatings. Our understanding of the physical effects resulting from low earth orbit are described, and guidelines and recommendations for component and materials choices are presented.

Blue, M. D.↗
NASA NTRS1990

Surface and implantation effects on p-n junctions

The contribution of the graded region of implanted p-n junctions is analyzed using an exponential profile. Though previously neglected, it was recently shown that this contribution to the saturation current of HgCdTe diodes is significant. Assuming a dominant Auger recombination, an analytical solution to the continuity equation is obtained. An expression for the current generation by the graded region is presented for both ohmic and reflecting boundary conditions. A revised condition for a wide region is derived. When the region is narrow, the current differs drastically from that of the zero-gradient case. The effects of the junction depth and the substrate and surface concentrations on the current are investigated. It is shown that the reverse current does not saturate.

Schacham, Samuel E.↗