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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

The impact of defects on the photovoltaic potential of RTR silicon ribbon

Silicon ribbon grown at a high rate by the ribbon-to-ribbon (RTR) method contains a variety of defects and can exhibit an unusual dendritic morphology. This paper is a study of the effect of the defect structure and dendritic morphology on the photovoltaic potential of RTR ribbon. Defects found in RTR ribbon include grain boundaries, twin planes, stacking faults and dislocations. The electrical activity of these defects is investigated by measuring the diffusion length in the ribbon; by fabricating small area diodes on the ribbon and evaluating their photoresponse; and by using a scanning electron microscope in the electron beam induced current mode. It is concluded that although grain boundaries serve very effectively as recombination centers, they do not occur frequently enough in RTR ribbons to significantly affect the generation current. Dislocation densities up to 1,000,000/sq cm can be tolerated without strongly reducing the photoresponse. Similarly, linear boundaries such as twin planes or stacking faults do not affect the cell performance up to densities of 1000/sq cm.

Baghdadi, A.↗
NASA NTRS1978

Characterization of the effects of metallic impurities on silicon solar cell performance

The effects of controlled concentrations of secondary impurities (Al, C, Ca, Cr, Cu, Fe, Mg, Mn, Mo, Ta, Ti, V, Zn, and Zr), incorporated alone or in combinations into Czochralski and float zone crystals, on the performance of silicon solar cells were investigated. Impurity concentrations ranged from 10 to the 11th to 10 to the 17th/cu cm. Solar cells were fabricated by a conventional diffusion process and characterized by computer reduction of current-voltage data. The data suggest that performance loss primarily results from reduction of the base diffusion length. On the basis of this assumption, a first order analytic model which predicts cell performance as a function of impurity concentrations is developed. Calculated performance parameters are in good agreement with observation, except for some impurities, such as Fe, Cu and Ni, which degrade cells via recombination and defects in the junction space-charge region. N-base devices are less affected by impurities, although degradation mechanisms appear to be the same as in p-devices. There seems to be very limited interaction between impurities in multiply-doped cells.

Davis, J. R.↗
NASA NTRS1978

Short circuit current changes in electron irradiated GaAlAs/GaAs solar cells

Heteroface p-GaAlAs/p-GaAs/n-GaAs solar cells with junction depths of 0.8, 1.5, and 4 microns were irradiated with 1 MeV electrons. The short-circuit current for the 4 micron junction depth cells is significantly reduced by the electron irradiation. Reduction of the junction depth to 1.5 microns improves the electron radiation resistance of the cells while further reduction of the junction depth to 0.8 microns improves the stability of the cells even more. Primary degradation is in the blue region of the spectrum. Considerable recovery of lost response is obtained by annealing the cells at 200 C. Computer modeling shows that the degradation is caused primarily by a reduction in the minority carrier diffusion length in the p-GaAs.

Walker, G. H.↗
NASA NTRS1979

Silicon Solar Cell Process Development, Fabrication and Analysis, Phase 1

Solar cells from RTR ribbons, EFG (RF and RH) ribbons, dendritic webs, Silso wafers, cast silicon by HEM, silicon on ceramic, and continuous Czochralski ingots were fabricated using a standard process typical of those used currently in the silicon solar cell industry. Back surface field (BSF) processing and other process modifications were included to give preliminary indications of possible improved performance. The parameters measured included open circuit voltage, short circuit current, curve fill factor, and conversion efficiency (all taken under AM0 illumination). Also measured for typical cells were spectral response, dark I-V characteristics, minority carrier diffusion length, and photoresponse by fine light spot scanning. the results were compared to the properties of cells made from conventional single crystalline Czochralski silicon with an emphasis on statistical evaluation. Limited efforts were made to identify growth defects which will influence solar cell performance.

Yoo, H. I.↗
NASA NTRS1980

Large area silicon sheet by EFG

Recent advances toward silicon growth stations and improved electronic quality of multiplesilicon are discussed. These advances were made in large measure by studies in which the composition of the gas environment around the meniscus area was varied. By introducing gases such as CO2, CO, and CH4 into this region, reproducible increases in diffusion length and cell performance were realized, with the best large area (5 cm x 10 cm) cells exceeding 11% efficiency.

Source record↗
NASA NTRS1980

Silicon Solar Cell Fabrication Technology

Device fabrication and photoconductive lifetime decay measurements were used to characterize single and polycrystalline silicon substracts. The device characterization of the processed materials was done by spectral response measurements and absolute quantum efficiency at a single wavelength. The results were then reduced to yield the diffusion length of the various samples. The photoconductive lifetime decay method was implemented in order to determine the minority carrier lifetime in unprocessed wafers.

Stafsudd, O. M.↗
NASA NTRS1979

Structure of deformed silicon and implications for low-cost solar cells

The paper reports on an investigation of the microstructure and minority carrier lifetime of silicon in uniaxially compressed silicon samples, the objective of which was to determine if it is feasible to produce silicon solar cells from sheet formed by high temperature deformation. It is reported that recrystallization was found to be incomplete in both fine and large grained materials, and that the major mode of recrystallization appears to be migration of existing boundaries into the deformed regions. Also, minority carrier diffusion length was found to be drastically reduced after deformation, perhaps due to contamination or cooling rate, and recovered only slightly with annealing. It is concluded that these results suggest that high temperature deformation of silicon for direct production of sheet for high efficiency solar cells is not practical. It is noted that potential may exist for its use as a coarse grained substrate.

Mardesich, N.↗
NASA NTRS1980

The determination of transport parameters of minority carriers in n-p junctions by means of an electron microscope - Critique of recent developments

It has recently been shown that amplitude modulated electron beams provide a novel means for the determination of minority carrier lifetimes, diffusion lengths, etc., in n-p junctions. In this paper it is shown that: (1) a recently published analysis based on a cylindrically symmetric configuration is incorrect, (2) the correct approach leads to a system of dual integral equations for which the formal solution is given, (3) in general, the short circuit current can only be determined by means of extensive computer calculations except in the case of large front surface recombination velocities, and (4) the difficulties encountered with cylindrically symmetric configurations (circular ohmic contacts and the like) are completely avoided with a choice of a planar geometry since simple closed form expressions for the short circuit current are readily available in this case.

Von Roos, O.↗
NASA NTRS1980

Origin of reverse annealing in radiation-damaged silicon solar cells

The paper employs relative defect concentrations, energy levels, capture cross sections, and minority carrier diffusion lengths in order to identify the defect responsible for the reverse annealing observed in a radiation damaged n(+)/p silicon solar cell. It is reported that the responsible defect, with the energy level at +0.30 eV, has been tentatively identified as boron-oxygen-vacancy complex. In conclusion, it is shown that removal of this defect could result in significant cell recovery when annealing at temperatures well below the currently required 400 C.

Weinberg, I.↗
NASA NTRS1980

Impurities in silicon solar cells

The paper investigates the effects of metallic impurities on the performance of silicon solar cells. Czochralski and polycrystalline ingots were employed with boron and phosphorus as primary dopants and with controlled additions of secondary impurities. The data obtained from over 200 crystals indicate that impurity-induced performance loss is primarily due to a reduction of the base diffusion length. Based on this observation, a model is developed which predicts cell performance as a function of secondary impurity concentrations. The model calculations are in good agreement with experimental values except for Cu, Ni, Fe, and to a lesser degree, carbon, which at higher concentrations degrade the cell by junction defect mechanisms.

Davis, J. R., Jr.↗
NASA NTRS1980

A study of the factors which control the efficiency of ion-implanted silicon solar cells

The objective of this work was to determine experimentally the ion-implantation parameters and furnace annealing conditions required to produce high-efficiency solar cells. A comprehensive experimental study was conducted in which the optimum ion-implantation parameters were found by a systematic variation of the implant parameters followed by detailed studies of solar-cell devices. Two furnace heat-treatment techniques were found which effectively anneal the implanted layers and at the same time preserve or improve the diffusion length in the bulk silicon. Detailed characteristics of both the junction and bulk properties of solar cells fabricated over the spectrum of implant parameters are discussed. Optimized implant parameters and annealing conditions were found which allow for the fabrication of 14-15-percent (AM1) efficient solar cells.

Douglas, E. C.↗
NASA NTRS1980

Effects of grain boundaries in polycrystalline solar cells

In polycrystalline solar cells, the short-circuit current is reduced (compared to single-crystal cells) due to recombination of minority carriers at the grain boundaries. The magnitude of this reduction is calculated for the case of a monochromatic beam of light, assuming that both the light beam and the grain boundaries are perpendicular to a p-n junction. The photoresponse of the junction is calculated in terms of the absorption coefficient of the light, the minority-carrier diffusion length, the surface recombination velocity at the grain boundary and the distance of the light beam from the grain boundary. The analysis gives an expression for an effective grain boundary width which depends on wavelength. This width determines the reduction in short-circuit current of solar cells made from material with columnar-type grains.

Zook, J. D.↗
NASA NTRS1979

Some characteristics of low-cost silicon sheet

The paper discusses structural defects in low-cost silicon sheets and their effect on the electronic properties related to solar cell performance. Experimental data are presented on the influence of grain boundaries on minority carrier diffusion length, impurity defect interaction, and variable surface recombination velocity. An analytical model of the effect of grain boundaries on solar cell performance is constructed based on these results.

Koliwad, K. M.↗
NASA NTRS1979

Low cost processes for silicon

The paper describes the multiple process development of low cost processes for manufacture of silicon. A support program includes subtasks for the modeling of reactions and reactors, chemical engineering and solid-state physics studies, and development of impurity concentration measurement procedures. The preliminary economic analyses indicate total product costs ranging from $5.00 to $8.73/kg based on 1000 MT/yr plants. In the studies of impurity effects, a model which considers that degradations of solar cell performance by impurities are primarily due to decreases in base diffusion length was constructed from experimental data.

Lutwack, R.↗
NASA NTRS1980

Radiation damage in silicon NIP solar cells

The performance parameters of n(+) p p(+) silicon solar cells of varying thicknesses with boron doped p base resistivities of 1250 and 84 ohm centimeters were determined. High injection theory was used to analyze the experimental data. Results from an analysis of open circuit voltages show a much greater contribution to V(oc) from the back junction than is the case for the lower resistivity in common use. The base minority carrier distribution is seen to be significant in determining the contribution of V(B), the base contribution to V(oc). Although V(B) is small, its value increases with increasing radiation fluence. In this connection it is noted that, with illumination from the p(+) side, the sign of V(B) becomes positive, and V(B) itself becomes an additive term to V(oc). Diffusion lengths determined under high injection conditions are significantly greater than those obtained under low injection, while damage coefficients under low injection are higher than those obtained under high injection conditions.

Weinberg, I.↗
NASA NTRS1980

Study of radiation induced deep-level defects in proton irradiated AlGaAs-GaAs solar cells

Radiation induced deep-level defects (both electron and hole traps) in proton irradiated AlGaAs-GaAs p-n junction solar cells are investigated along with the correlation between the measured defect parameters and the solar cell performance parameters. The range of proton energies studied was from 50 KeV to 10 MeV and the proton fluence was varied from 10 to the 10th power to 10 to the 13th power P/sq cm. Experimental tools employed include deep-level transient spectroscopy, capacitance-voltage, current voltage, and SEM-EBIC methods. Defect and recombination parameters such as defect density and energy level, capture cross section, carrier lifetimes and effective hole diffusion lengths in n-GaAs LPE layers were determined from these measurements.

Li, S. S.↗
NASA NTRS1981

Performance of high resistivity n+pp+ silicon solar cells under 1 MeV electron irradiation

High resistivity (1250 and 84 ohm-cm) n(+)pp(+) silicon solar cells were irradiated and their performance evaluated as a function of fluence. The greatest degradation in power occurred for the higher resistivity cell. The data were analyzed under open circuit conditions, and the components of V sub oc determined as a function of fluence. It was found that the voltage contributions from the front and back junctions decreased while the base component (V sub B) increased with fluence. The anomalous behavior of V sub B was attributed to an increase in the base minority carrier gradient with fluence. An argument that the increased power degradation in the 1250 ohm-cm cells was attributable to an increased voltage drop in the base is presented. Diffusion lengths calculated under high injection conditions were significantly greater than those determined under low injection. This was attributed to a saturation of recombination centers under high injection conditions.

Weinberg, I.↗
NASA NTRS1981

Electronic properties of deep-level defects in proton irradiated AlGaAs-GaAs solar cells

Deep level transient spectroscopy and capacitance voltage techniques as well as analysis of the forward current voltage (I-V) characteristics and SEM-EIC data were carried out for proton irradiated GaAs solar cells over a wide range of proton energies and proton fluences. Defect and recombination parameters such as defect energy levels and density, carrier capture cross sections and lifetimes as well as diffusion lengths in the undoped n-GaAs LPE layers were determined. Good correlation between these defect parameters and solar cell performance parameters was obtained for GaAs solar cells irradiated by 200 and 290 KeV protons. It was found that 200 to 290 KeV protons will produce the most defects and damages to the GaAs solar cell structure used. The influence of the low temperature (200 to 400 C) periodic thermal annealing on the deep level defects and the performance of the 200 KeV proton irradiated cells is discussed.

Li, S. S.↗