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At least 307 records · Page 17

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NASA NTRS1999

Crystal Growth of II-VI Semiconducting Alloys by Directional Solidification

This research study is investigating the effects of a microgravity environment during the crystal growth of selected II-VI semiconducting alloys on their compositional, metallurgical, electrical and optical properties. The on-going work includes both Bridgman-Stockbarger and solvent growth methods, as well as growth in a magnetic field. The materials investigated are II-VI, Hg(1-x)Zn(x)Te, and Hg(1-x)Zn(x)Se, where x is between 0 and 1 inclusive, with particular emphasis on x-values appropriate for infrared detection and imaging in the 5 to 30 micron wavelength region. Wide separation between the liquidus and solidus of the phase diagrams with consequent segregation during solidification and problems associated with the high volatility of one of the components (Hg), make the preparation of homogeneous, high-quality, bulk crystals of the alloys an extremely difficult nearly an impossible task in a gravitational environment. The three-fold objectives of the on-going investigation are as follows: (1) To determine the relative contributions of gravitationally-driven fluid flows to the compositional redistribution observed during the unidirectional crystal growth of selected semiconducting solid solution alloys having large separation between the liquidus and solidus of the constitutional phase diagram; (2) To ascertain the potential role of irregular fluid flows and hydrostatic pressure effects in generation of extended crystal defects and second-phase inclusions in the crystals; and, (3) To obtain a limited amount of "high quality" materials needed for bulk crystal property characterizations and for the fabrication of various device structures needed to establish ultimate material performance limits. The flight portion of the study was to be accomplished by performing growth experiments using the Crystal Growth Furnace (CGF) manifested to fly on various Spacelab missions.

Lehoczky, Sandor L.↗

NASA NTRS2003

Synthesis and CV Studies of Dithiol-terminated Metal Terpyridine Complexes

Transition metal coordination complexes possess unique electronic structures that should be a good model for studying electronic transport behavior at a molecular level. The discrete, multiple redox states, low redox potential and the superb ability to establish contact with other molecular and electronic components by coordination chemistry have made this a subject of investigation for their possible application as active electronic components in molecular devices. We present the synthesis and electrochemical characterization of 4'-thioacetylphenyl-2'2:6',2"-terpyridine iron(II) complex and compare it with a model bis-terpyridine iron(II) complex by cyclic voltammetry. With the use of different working electrodes, the behavior of these complexes show different electron transfer rates.

Asano, Sylvia↗

NASA NTRS2002

Bolometric detectors for the high frequency instrument on the Planck surveyor

The High Frequency Instrument (HFI) on Planck will obtain all-sky images of the Cosmic Microwave Background (CMB) and other astrophysical sources of emission with resolution of 9 arcniin at 100 GHz, 7 arcmin at 143 GHz and 5 arcniin at 217, 353, 545 and 857 GHz. The HFI focal plane will contain 48 silicon nitride micromesh bolometric detectors operating from a 100 mK heat sink. Four detectors in each of the 6 bands will detect the sum of the power in both linear polarizations. An additional 4 pair of detectors will provide sensitivity to linear polarization of emission at 143, 217 and 353 GHz. We report on the development of these detectors, which are being produced at the JPL Micro Devices Laboratory, packaged at JPL Electronics Packaging, characterized at 100 mK before delivery to our HFI consortium partners at the UWCC, UK.

Planck CMB bolometer↗

NASA NTRS2006

Electromagnetic energy coupling mechanism with matrix architecture control

The present invention relates generally to reconfigurable, solid-state matrix arrays comprising multiple rows and columns of reconfigurable secondary mechanisms that are independently tuned. Specifically, the invention relates to reconfigurable devices comprising multiple, solid-state mechanisms characterized by at least one voltage-varied parameter disposed within a flexible, multi-laminate film, which are suitable for use as magnetic conductors, ground surfaces, antennas, varactors, ferrotunable substrates, or other active or passive electronic mechanisms.

Knowles, Gareth↗

NASA NTRS2008

First On-Wafer Power Characterization of MMIC Amplifiers at Sub-Millimeter Wave Frequencies

Recent developments in semiconductor technology have enabled advanced submillimeter wave (300 GHz) transistors and circuits. These new high speed components have required new test methods to be developed for characterizing performance, and to provide data for device modeling to improve designs. Current efforts in progressing high frequency testing have resulted in on-wafer-parameter measurements up to approximately 340 GHz and swept frequency vector network analyzer waveguide measurements to 508 GHz. On-wafer noise figure measurements in the 270-340 GHz band have been demonstrated. In this letter we report on on-wafer power measurements at 330 GHz of a three stage amplifier that resulted in a maximum measured output power of 1.78mW and maximum gain of 7.1 dB. The method utilized demonstrates the extension of traditional power measurement techniques to submillimeter wave frequencies, and is suitable for automated testing without packaging for production screening of submillimeter wave circuits.

monolithic microwave integrated circircuit↗

NASA NTRS2014

The Magnetically-Tuned Transition-Edge Sensor

We present the first measurements on the proposed magnetically-tuned superconducting transition-edge sensor (MTES) and compare the modified resistive transition with the theoretical prediction. A TES's resistive transition is customarily characterized in terms of the unit less device parameters alpha and beta corresponding to the resistive response to changes in temperature and current respectively. We present a new relationship between measured IV quantities and the parameters alpha and beta and use these relations to confirm we have stably biased a TES with negative beta parameter with magnetic tuning. Motivated by access to this new unexplored parameter space, we investigate the conditions for bias stability of a TES taking into account both self and externally applied magnetic fields.

Sadleir, John E.↗

NASA NTRS2009

Flash memory reliability NEPP 2008 task final report

This is the preliminary report which is based on the flash memory reliability studies conducted during the first year (2008) of the multi-year NEPP task. The report outlines the technology and reliability challenges for advanced flash memory technologies, summarizes the test results and analyses of reliability characterizations performed on the selected flash memory devices during 2008, and provides the preliminary thoughts on the risk mitigation approaches on using advanced flash memory technologies for space applications.

Chen, Yuan↗

NASA NTRS2009

Superconducting Hot-Electron Submillimeter-Wave Detector

A superconducting hot-electron bolometer has been built and tested as a prototype of high-sensitivity, rapid-response detectors of submillimeter-wavelength radiation. There are diverse potential applications for such detectors, a few examples being submillimeter spectroscopy for scientific research; detection of leaking gases; detection of explosive, chemical, and biological weapons; and medical imaging. This detector is a superconducting-transition- edge device. Like other such devices, it includes a superconducting bridge that has a low heat capacity and is maintained at a critical temperature (T(sub c)) at the lower end of its superconducting-transition temperature range. Incident photons cause transient increases in electron temperature through the superconducting-transition range, thereby yielding measurable increases in electrical resistance. In this case, T(sub c) = 6 K, which is approximately the upper limit of the operating-temperature range of silicon-based bolometers heretofore used routinely in many laboratories. However, whereas the response speed of a typical silicon- based laboratory bolometer is characterized by a frequency of the order of a kilohertz, the response speed of the present device is much higher characterized by a frequency of the order of 100 MHz. For this or any bolometer, a useful figure of merit that one seeks to minimize is (NEP)(tau exp 1/2), where NEP denotes the noise-equivalent power (NEP) and the response time. This figure of merit depends primarily on the heat capacity and, for a given heat capacity, is approximately invariant. As a consequence of this approximate invariance, in designing a device having a given heat capacity to be more sensitive (to have lower NEP), one must accept longer response time (slower response) or, conversely, in designing it to respond faster, one must accept lower sensitivity. Hence, further, in order to increase both the speed of response and the sensitivity, one must make the device very small in order to make its heat capacity very small; this is the approach followed in developing the present device.

Karasik, Boris↗

NASA NTRS1984

Real-time X-ray Diffraction: Applications to Materials Characterization

With the high speed growth of materials it becomes necessary to develop measuring systems which also have the capabilities of characterizing these materials at high speeds. One of the conventional techniques of characterizing materials was X-ray diffraction. Film, which is the oldest method of recording the X-ray diffraction phenomenon, is not quite adequate in most circumstances to record fast changing events. Even though conventional proportional counters and scintillation counters can provide the speed necessary to record these changing events, they lack the ability to provide image information which may be important in some types of experiment or production arrangements. A selected number of novel applications of using X-ray diffraction to characterize materials in real-time are discussed. Also, device characteristics of some X-ray intensifiers useful in instantaneous X-ray diffraction applications briefly presented. Real-time X-ray diffraction experiments with the incorporation of image X-ray intensification add a new dimension in the characterization of materials. The uses of real-time image intensification in laboratory and production arrangements are quite unlimited and their application depends more upon the ingenuity of the scientist or engineer.

Rosemeier, R. G.↗

NASA NTRS1995

Growth of single crystals of organic salts with large second-order optical nonlinearities by solution processes for devices

Data obtained from the electric field induced second harmonic generation (EFISH) and Kurtz Powder Methods will be provided to MSFC for further refinement of their method. A theoretical model for predicting the second-order nonlinearities of organic salts is being worked on. Another task is the synthesis of a number of salts with various counterions. Several salts with promising SHG activities and new salts will be tested for the presence of two crystalline forms. The materials will be recrystallized from dry and wet solvents and compared for SHG efficiency. Salts that have a high SHG efficiency and no tendency to form hydrates will be documented. The synthesis of these materials are included in this report. A third task involves method to aid in the growth of large, high quality single crystals by solution processes. These crystals will be characterized for their applicability in the fabrication of devices that will be incorporated into optical computers in future programs. Single crystals of optimum quality may be obtained by crystal growth in low-gravity. The final task is the design of a temperature lowering single crystal growth apparatus for ground based work. At least one prototype will be built.

Leslie, Thomas M.↗

NASA NTRS2016

Pathfinder Technology Demonstrator: GlobalStar Testing and Results

The communications subsystem of a spacecraft is typically a SWaP (size, weight, and power) intensive subsystem in a SWaP constrained environment such as a CubeSat. Use of a satellite-based communication system, such as GlobalStars duplex GSP-1720 radio is a low SWaP potentially game-changing low-cost communication subsystem solution that was evaluated for feasibility for the NASA Pathfinder Technology Demonstrator (PTD) project. The PTD project is a series of 6U CubeSat missions to flight demonstrate and characterize novel small satellite payloads in low Earth orbit. GlobalStar is a low Earth orbit satellite constellation for satellite phone and low-speed data communications, and the GSP-1720 is their single board duplex radio most commonly used in satellite phones and shipment tracking devices. The PTD project tested the GSP-1720 to characterize its viability for flight using NASA GEVS (General Environmental Verification Standard) vibration and thermal vacuum levels, as well as testing the uplink-downlink connectivity, data throughput, and file transfer capabilities. This presentation will present the results of the environmental and capability testing of the GSP-1720 performed at NASA Ames Research Center, as well as the viability for CubeSat use in LEO.

satellite communication↗

NASA NTRS2006

Bias Selective Operation of Sb-Based Two-Color Photodetectors

Multicolor detectors have a strong potential to replace conventional single-color detectors in application dealing with the simultaneous detection of more than one wavelength. This will lead to the reduction of heavy and complex optical components now required for spectral discrimination for multi-wavelengths applications. This multicolor technology is simpler, lighter, compact and cheaper with respect to the single-color ones. In this paper, Sb-based two-color detectors fabrication and characterization are presented. The color separation is achieved by fabricating dual band pn junction on a GaSb substrate. The first band consists of an InGaAsSb pn junction for long wavelength detection, while the second band consists of a GaSb pn junction for shorter wavelength detection. Three metal contacts were deposited to access the individual junctions. Surface morphology of multi-layer thin films and also device characteristics of quasi-dual band photodetector were characterized using standard optical microscope and electro-optic techniques respectively. Dark current measurements illustrated the diode behavior of both lattice-matched detector bands. Spectral response measurements indicated either independent operation of both detectors simultaneously, or selective operation of one detector, by the polarity of the bias voltage, while serially accessing both devices.

Abedin, M. N.↗

NASA NTRS1986

The 60 GHz IMPATT diode development

The objective is to develop 60 GHz IMPATT diodes suitable for communications applications. The performance goals of the 60 GHz IMPATT is 1W CW output power with a conversion efficiency of 15 percent and 10-year lifetime. The final design of the 60 GHz IMPATT structure evolved from computer simulations performed at the University of Michigan. The initial doping profile, involving a hybrid double-drift (HDD) design, was derived from a drift-diffusion model that used the static velocity-field characteristics for GaAs. Unfortunately, the model did not consider the effects of velocity undershoot and delay of the avalanche process due to energy relaxation. Consequently, the initial devices were oscillating at a much lower frequency than anticipated. With a revised simulation program that included the two effects given above, a second HDD profile was generated and was used as a basis for fabrication efforts. In the area of device fabrication, significant progress was made in epitaxial growth and characterization, wafer processing, and die assembly. The organo-metallic chemical vapor deposition (OMCVD) was used. Starting with a baseline X-Band IMPATT technology, appropriate processing steps were modified to satisfy the device requirements at V-Band. In terms of efficiency and reliability, the device requirements dictate a reduction in its series resistance and thermal resistance values. Qualitatively, researchers were able to reduce the diodes' series resistance by reducing the thickness of the N+ GaAs substrate used in its fabrication.

Dat, Rovindra↗

NASA NTRS1981

Crystal growth of device quality GaAs in space

Experimental and theoretical efforts in the development of crystal growth approaches, effective techniques for electronic characterization on a macro and microscale, and in the discovery of phenomena and processes relevant to GaAs device applications are reported. The growth of electron trap-free bulk GaAS with extremely low density of dislocations is described. In electroepitaxy, growth configuration which eliminates the substrate back-contact was developed. This configuration can be extended to the simultaneous growth on many substrates with a thin solution layer sandwiched between any two of them. The significant reduction of Joule heating effects in the configuration made it possible to realize the in situ measurement of the layer thickness and the growth velocity. Utilizing the advantages of electroepitaxy in achieving abrupt acceleration (or deceleration) of the growth it was shown that recombination centers are formed as a result of growth acceleration.

Lagowski, J.↗

NASA NTRS2010

Characterization of Photoreceivers for LISA

LISA will use quadrant photo receivers as front-end devices for the phase meter measuring the motion of drag-free test masses in both angular orientation and separation. We have set up a laboratory testbed for the characterization of photo receivers. Some of the limiting noise sources have been identified and their contribution has been either measured or determined from the measured data. We have built a photo receiver with a 0.5 mm diameter quadrant photodiode with an equivalent input noise of better than 1.8 pA/(square root of)Hz below 20 MHz and a 3 dB bandwidth of 34 MHz.

Cervantes, F. Guzman↗

NASA NTRS1972

Methods of measurement for semiconductor materials, process control, and devices

Activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices are described. Accomplishments include the determination of the reasons for differences in measurements of transistor delay time, identification of an energy level model for gold-doped silicon, and the finding of evidence that it does not appear to be necessary for an ultrasonic bonding tool to grip the wire and move it across the substrate metallization to make the bond. Work is continuing on measurement of resistivity of semiconductor crystals; study of gold-doped silicon; development of the infrared response technique; evaluation of wire bonds and die attachment; measurement of thermal properties of semiconductor devices, delay time, and related carrier transport properties in junction devices, and noise properties of microwave diodes; and characterization of silicon nuclear radiation detectors.

Bullis, W. M.↗

NASA NTRS1972

Surveyor television camera, selected materials and electronic components, Appendix C

The locations of various parts of the Surveyor camera are presented. Tables were prepared with emphasis on: (1) exterior parts and surfaces that are directly exposed to space, (2) parts that shield others from space radiation, (3) representative or unique materials, and (4) electronic devices that may contain unique or well-characterized materials.

Carroll, W. F.↗

NASA NTRS1973

Radiation sensitive solid state switch

A mechanically operable solid state switch suited for use in achieving a variable circuit-switching function is described. This switch is characterized by an annular array of photoresponsive switching devices, disposed in communication with an included source of radiation, and a plurality of interchangeable, mechanically operable interrupter disks. Each disk has a predetermined pattern of transparent and opaque portions. Operative displacement of each disk serves to make and break selected electrical circuits through the photo responsive devices of said array.

Hutto, R. J.↗