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At least 307 records · Page 17

Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques

The attachment of dopant precursor molecules to depassivated areas of hydrogen-terminated silicon templated with a scanning tunneling microscope (STM) has been used to create electronic devices with sub-nanometer precision, typically for quantum physics demonstrations, and to dope silicon past the solid-solubility limit, with potential applications in microelectronics and plasmonics. However, this process, which we call atomic precision advanced manufacturing (APAM), currently lacks the throughput required to develop sophisticated applications because there is no proven scalable hydrogen lithography pathway. Here, we demonstrate and characterize an APAM device workflow where STM lithography has been replaced with photolithography. An ultraviolet laser is shown to locally heat silicon controllably above the temperature required for hydrogen depassivation. STM images indicate a narrow range of laser energy density where hydrogen has been depassivated, and the surface remains well-ordered. A model for photothermal heating of silicon predicts a local temperature which is consistent with atomic-scale STM images of the photo-patterned regions. Finally, a simple device made by exposing photo-depassivated silicon to phosphine is found to have a carrier density and mobility similar to that produced by similar devices patterned by STM.

42 ENGINEERING↗

Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques

The attachment of dopant precursor molecules to depassivated areas of hydrogen-terminated silicon templated with a scanning tunneling microscope (STM) has been used to create electronic devices with subnanometer precision, typically for quantum physics experiments. This process, which we call atomic precision advanced manufacturing (APAM), dopes silicon beyond the solid-solubility limit and produces electrical and optical characteristics that may also be useful for microelectronic and plasmonic applications. However, scanned probe lithography lacks the throughput required to develop more sophisticated applications. In this work, we demonstrate and characterize an APAM device workflow where scanned probe lithography of the atomic layer resist has been replaced by photolithography. An ultraviolet laser is shown to locally and controllably heat silicon above the temperature required for hydrogen depassivation on a nanosecond timescale, a process resistant to under- and overexposure. STM images indicate a narrow range of energy density where the surface is both depassivated and undamaged. Modeling that accounts for photothermal heating and the subsequent hydrogen desorption kinetics suggests that the silicon surface temperatures reached in our patterning process exceed those required for hydrogen removal in temperature-programmed desorption experiments. A phosphorus-doped van der Pauw structure made by sequentially photodepassivating a predefined area and then exposing it to phosphine is found to have a similar mobility and higher carrier density compared with devices patterned by STM. Lastly, it is also demonstrated that photodepassivation and precursor exposure steps may be performed concomitantly, a potential route to enabling APAM outside of ultrahigh vacuum.

nanoscale devices↗

Adjustable Focus Optical Correction Lens (AFOCL)

This report describes the activities and accomplishments along with the status of the characterization of a PLZT-based Adjustable Focus Optical Correction Lens (AFOCL) test device. The activities described in this report were undertaken by members of the Center for Applied Optics (CAO) at the University of Alabama in Huntsville (UAH) under NASA Contract NAS8-00188. The effort was led by Dr. Bruce Peters as the Principal Investigator and supported by Dr. Patrick Reardon, Ms. Deborah Bailey, and graduate student Mr. Jeremy Wong. The activities outlined for the first year of the contract were to identify vendors and procure a test device along with performing the initial optical characterization of the test device. This activity has been successfully executed and test results are available and preliminary information was published at the SPIE Photonics West Conference in San Jose, January 2001. The paper, "Preliminary investigation of an active PLZT lens," was well received and generated response with several questions from the audience. A PLZT test device has been commercially procured from an outside vendor: The University of California in San Diego (UCSD) in partnership with New Interconnect Packaging Technologies (NIPT) Inc. The device has been subjected to several tests to characterize the optical performance of the device at wavelengths of interest. The goal was to evaluate the AFOCL similar to a conventional lens and measure any optical aberrations present due to the PLZT material as a deviation in the size of the diffraction limited spot (blur), the presence of diffracted energy into higher orders surrounding the focused spot (a variation in Strehl), and/or a variation or spread in the location of the focused energy away from the optical axis (a bias towards optical wedge, spherical, comma, or other higher order aberrations). While data has been collected indicative of the imaging quality of the AFOCL test device, it was not possible to fully characterize the optical performance of the AFOCL alone because there were significant optical distortions due to fabrication related issues.

Peters, Bruce R.↗

Ionization wave propagation in a He plasma jet in a controlled gas environment

Characterizing ionization wave propagation in low temperature plasma jets is critical to predicting production of reactive species and plasma–surface interactions for biomedical applications and surface functionalization. In this work, results from optical emission and laser induced fluorescence measurements of the ionization wave in a He plasma jet operating in a controlled gas environment are discussed and used for comparison with numerical modeling. Additionally, the ionization wave was observed using ICCD (Intensified Charge Coupled Device) imaging and characterized by time and spatially resolved electron density measurements using laser-collision-induced fluorescence. The plasma jet was initially characterized using pure He (nominally at 200 Torr), while varying pressure and voltage. When operating in pure He, the ionization wave broadly expands exiting the plasma tube. Increasing the operating pressure reduces the speed and isotropic expansion of the ionization wave. Furthermore, the jet operated with a humid He shroud was also studied. The humid He shroud results in the electron density increasing and having an annular profile due to the lower ionization potential of H2O compared to He and localized photoionization in the mixing region. Numerical modeling highlighted the importance of resonance radiation emitted by excited states of He, photoelectron emission from the quartz tube, and the kinetic behavior of the electrons produced by photoionization ahead of the ionization front.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Time-resolved synchrotron light source X-ray detection with Low-Gain Avalanche Diodes

Low Gain Avalanche Diodes (LGADs) represent the state-of-the-art in timing measurements and will instrument future timing detectors at the High Luminosity Large Hadron Collider (HL-LHC) experiments. While conceived as a sensor for charged particles, the intrinsic gain of LGADs makes it possible to detect low energy X-rays with good energy resolution and excellent timing (tens of picoseconds). Here, using the Stanford Synchrotron Radiation Lightsource (SSRL) at SLAC, several LGADs designs were characterized with energies from 5 to 35 keV. The SSRL provides 10 ps pulsed X-ray bunches separated by 2.1 ns intervals, and with an energy dispersion (ΔE/E) of 1 X 10 -4 . LGADs fabricated by Hamamatsu Photonics (HPK) and Brookhaven National Laboratory (BNL) with different thicknesses ranging from 20 µm to 50 µm and different gain layer designs were read out a two stage fast amplification circuit and digitized with a high bandwidth, high sampling rate oscilloscope. PIN devices from HPK were characterized as well. A systematic and detailed characterization of the devices’ energy linearity, resolution and timing resolution as a function of X-ray energy was performed for different biasing voltages at room temperature

Charge multiplication↗

Emerging opportunities for hybrid perovskite solar cells using machine learning

While there are several bottlenecks in hybrid organic–inorganic perovskite (HOIP) solar cell production steps, including composition screening, fabrication, material stability, and device performance, machine learning approaches have begun to tackle each of these issues in recent years. Different algorithms have successfully been adopted to solve the unique problems at each step of HOIP development. Specifically, high-throughput experimentation produces vast amount of training data required to effectively implement machine learning methods. Here, we present an overview of machine learning models, including linear regression, neural networks, deep learning, and statistical forecasting. Experimental examples from the literature, where machine learning is applied to HOIP composition screening, thin film fabrication, thin film characterization, and full device testing, are discussed. These paradigms give insights into the future of HOIP solar cell research. As databases expand and computational power improves, increasingly accurate predictions of the HOIP behavior are becoming possible.

Hering, Abigail R. (ORCID:0000000270806953)↗

Temperature dependence of nickel ion release from nitinol medical devices

Abstract Nitinol exhibits unique (thermo)mechanical properties that make it central to the design of many medical devices. However, nitinol nominally contains 50 atomic percent nickel, which if released in sufficient quantities, can lead to adverse health effects. While nickel release from nitinol devices is typically characterized using in vitro immersion tests, these evaluations require lengthy time periods. We have explored elevated temperature as a potential method to expedite this testing. Nickel release was characterized in nitinol materials with surface oxide thickness ranging from 12 to 1564 nm at four different temperatures from 310 to 360 K. We found that for three of the materials with relatively thin oxide layers, ≤ 87 nm nickel release exhibited Arrhenius behavior over the entire temperature range with activation energies of 80 to 85 kJ/mol. Conversely, the fourth ''black–oxide'' material, with a much thicker, complex oxide layer, was not well characterized by an Arrhenius relationship. Power law release profiles were observed in all four materials; however, the exponent from the thin oxide materials was approximately 1/4 compared with 3/4 for the black–oxide material. To illustrate the potential benefit of using elevated temperature to abbreviate nickel release testing, we demonstrated that a > 50 day 310 K release profile could be accurately recovered by testing for less than 1 week at 340 K. However, because the materials explored in this study were limited, additional testing and mechanistic insight are needed to establish a protective temperature scaling that can be applied to all nitinol medical device components.

Saylor, David M.↗

Investigation of Off-Stoichiometry in Ternary Nitrides by EDS and HRTEM

We demonstrate an inverted metamorphic multijunction (IMM) photovoltaic cell comprising lattice-mismatched 1.2 eV AlGaInAs and 1.0 eV GaInAs junctions optimized for high-temperature thermophotovoltaic (TPV) applications. This device differs from traditional IMM solar cells because the mismatched junctions are grown at a single lattice constant. This architecture enables removal of the compositionally graded buffer which otherwise filters light from the junctions below and absorbs sub-bandgap light via free-carrier absorption. Sub-bandgap absorption dramatically reduces the efficiency of TPV systems using high reflectivity cells to enable bandedge spectrum filtering. Three components required development to enable this device: 1) a lattice-mismatched 1.2 eV AlGaInAs junction, 2) a metamorphic contact layer grown after the graded buffer, and 3) a transparent tunnel junction that sits in front of the 1.0 eV GaInAs junction. Growth conditions that minimize oxygen defect incorporation maximize AlGaInAs cell quality, enabling a 0.41 V bandgap open circuit voltage offset at 22 mA/cm2 under AM1.5D. A mismatched GaInAs:Se layer is developed as a low resistance contact. Lastly we develop a GaAsSb:C/GaInP:Se tunnel junction suitable for high-power densities with more transparency than the GaAsSb:C/GaInP:Se structure used in past IMM cells. We characterize the tandem device under a high-intensity spectrum that approximates the emission from a 2150 °C blackbody radiator and deduce a projected ideal TPV efficiency of 39.9% at ~30% of the blackbody irradiance, and 36% ideal TPV efficiency under the full 118 W/cm2 irradiance. Improvements to the back-surface reflectivity and series resistance are expected to increase the ideal TPV efficiency well above 40%.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Inverted Metamorphic AlGaInAs/GaInAs Tandem Thermophotovoltaic Cell Designed for Thermal Energy Grid Storage Application

We demonstrate an inverted metamorphic multijunction (IMM) photovoltaic cell comprising lattice-mismatched 1.2 eV AlGaInAs and 1.0 eV GaInAs junctions optimized for high-temperature thermophotovoltaic (TPV) applications. This device differs from traditional IMM solar cells because the mismatched junctions are grown at a single lattice constant. This architecture enables removal of the compositionally graded buffer that otherwise filters light from the junctions below and absorbs sub-bandgap light via free-carrier absorption. Sub-bandgap absorption dramatically reduces the efficiency of TPV systems using high reflectivity cells to enable band edge spectrum filtering. Three components required development to enable this device: (1) a lattice-mismatched 1.2 eV AlGaInAs junction, (2) a metamorphic contact layer grown after the graded buffer, and (3) a transparent tunnel junction that sits in front of the 1.0 eV GaInAs junction. Growth conditions that minimize oxygen defect incorporation maximize AlGaInAs cell quality, enabling a 0.41 V bandgap open circuit voltage offset at 22 mA/cm2 under AM1.5D. A mismatched GaInAs:Se layer is developed as a low resistance contact. Lastly, we develop a GaAsSb:C/GaInP:Se tunnel junction suitable for high-power densities with more transparency than the GaAsSb:C/GaInAs:Se structure used in past IMM cells. We characterize the tandem device under a high-intensity spectrum that approximates the emission from a 2150°C blackbody radiator and deduce a projected ideal TPV efficiency of 39.9% at ~30% of the blackbody irradiance and 36% ideal TPV efficiency under the full 118 W/cm2 irradiance. Improvements to the back-surface reflectivity and series resistance are expected to increase the ideal TPV efficiency well above 40%.

25 ENERGY STORAGE↗

Evaluation of a high-performance storage buffer with 3D XPoint devices for the DUNE data acquisition system

The DUNE detector is a neutrino physics experiment that is expected to take data starting from 2028. The data acquisition (DAQ) system of the experiment is designed to sustain several TB/s of incoming data which will be temporarily buffered while being processed by a software based data selection system. In DUNE, some rare physics processes (e.g. Supernovae Burst events) require storing the full complement of data produced over 1-2 minute window. These are recognised by the data selection system which fires a specific trigger decision. Upon reception of this decision data are moved from the temporary buffers to local, high performance, persistent storage devices. In this paper we characterize the performance of novel 3DXPoint SSD devices under different workloads suitable for high-performance storage applications. We then illustrate how such devices may be applied to the DUNE use-case: to store, upon a specific signal, 100 seconds of incoming data at 1.5 TB/s distributed among 150 identical units each operating at approximately 10GB/s.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Aqueous-soluble bipyridine cobalt($\tiny{II}$/$\tiny{III}$) complexes act as direct redox mediators in photosystem I-based biophotovoltaic devices

Sustainable energy production is critical for meeting growing worldwide energy demands. Due to its stability and reduction potential, photosystem I (PSI) is attractive as the photosensitizer in biophotovoltaic devices. Herein, we characterize aqueous and organic solvent soluble synthetic bipyridine-based cobalt complexes as redox mediators for PSI-based biophotovoltaics applications. Cobalt-based complexes are not destructive to protein and have appropriate midpoint potentials for electron donation to PSI. We report on PSI stability in organic solvents commonly used in biophotovoltaics. We also show the effects of a mixed organic solvent phase on PSI reduction kinetics, slowing reduction rates approximately 8–38 fold as compared to fully aqueous systems, with implications for dye regeneration rates in PSI-based biophotovoltaics. Further, we show evidence of direct electron transfer from cobalt complexes to PSI. Finally, we report on photocurrent generation from Co mediator-PSI biophotovoltaic devices. Taken together, we discuss the development of novel Co complexes and our ability to fine-tune their characteristics via functional groups and counteranion choice to drive interaction with a biological electron acceptor on multiple levels from redox midpoints, spectral overlap, and solvent requirements, among others. This work suggests that fine-tuning of redox active species for interaction with a biological partner is possible for the creation and improvement of low cost, carbon-neutral energy production in the future.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Review of Research on Low-Profile Vortex Generators to Control Boundary-Layer Separation

An in-depth review of boundary-layer flow-separation control by a passive method using low-profile vortex generators is presented. The generators are defined as those with a device height between 10% and 50% of the boundary layer thickness. Key results are presented for several research efforts, all of which were performed within the past decade and a half where the majority of these works emphasize experimentation with some recent efforts on numerical simulations. Topics of discussion consist of both basic fluid dynamics and applied aerodynamics research. The fluid dynamics research includes comparative studies on separation control effectiveness as well as device-induced vortex characterization and correlation. The comparative studies cover the controlling of low-speed separated flows in adverse pressure gradient and supersonic shock-induced separation. The aerodynamics research includes several applications for aircraft performance enhancement and covers a wide range of speeds. Significant performance improvements are achieved through increased lift and/or reduced drag for various airfoils-low-Reynolds number, high-lift, and transonic-as well as highly swept wings. Performance enhancements for non-airfoil applications include aircraft interior noise reduction, inlet flow distortion alleviation inside compact ducts, and a more efficient overwing fairing. The low-profile vortex generators are best for being applied to applications where flow-separation locations are relatively fixed and the generators can be placed reasonably close upstream of the separation. Using the approach of minimal near-wall proturbances through substantially reduced device height, these devices can produce streamwise vortices just strong enough to overcome the separation without unnecessarily persisting within the boundary layer once the flow-control objective is achieved. Practical advantages of low-profile vortex generators, such as their inherent simplicity and low device drag, are demonstrated to be critically important for many applications as well.

Lin, John C.↗

Photon Sieve Design and Fabrication for Imaging Characteristics Using UAV Flight

The Photon Sieve (PS) team at NASA Langley Research Center (LaRC) began receiving support for the development and characterization of PS devices through the NASA Internal Research & Development Program (IRAD) in 2015. The project involves ascertaining the imaging characteristics of various PS devices. These devices hold the potential to significantly reduce mission costs and improve imaging quality by replacing traditional reflector telescopes. The photon sieve essentially acts as a lens to diffract light to a concentrated point on the focal plane like a Fresnel Zone Plate (FZP). PS’s have the potential to focus light to a very small spot which is not limited by the width of the outermost zone as for the FZP and offers a promising solution for high resolution imaging. In the fields of astronomy, remote sensing, and other applications that require imaging of distant objects both on the ground and in the sky, it is often necessary to perform post-process filtering in order to separate noise signals that arise from multiple scattering events near the collection optic. The PS exhibits a novel filtering technique that rejects the unwanted noise without the need for time consuming post processing of the images. This project leverages key Langley resources to design, manufacture, and characterize a series of photon sieve specimens. After a prototype was developed and characterized in the Langley ISO5 optical cleanroom and laboratory, outside testing was conducted via the capture of images of the moon by using a telescopic setup. This next goal of the project is to design and develop a telescope and image capture system as a drone-based instrument payload. The vehicle utilized for the initial demonstration was a NASA hive model 1200 XE-8 research Unmanned Aerial Vehicle (UAV), capable of handling a 20-pound maximum payload with a 25-minute flight time. This NASA Technical Memorandum (NASA-TM) introduces preliminary results obtained using a PS-based imaging system on the UAV. The next version of the telescope structure will be designed around diffractive optical components and commercially available camera electronics to create a lightweight payload.

Kim, Hyun Jung↗

2024 roadmap on 2D topological insulators

Abstract 2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band structure, in which bulk-boundary correspondences enforces the existence of 1D spin–momentum locked metallic edge states—both helical and chiral—surrounding an electrically insulating bulk. Forty years since the first discoveries of topological phases in condensed matter, the abstract concept of band topology has sprung into realization with several materials now available in which sizable bulk energy gaps—up to a few hundred meV—promise to enable topology for applications even at room-temperature. Further, the possibility of combining 2D TIs in heterostructures with functional materials such as multiferroics, ferromagnets, and superconductors, vastly extends the range of applicability beyond their intrinsic properties. While 2D TIs remain a unique testbed for questions of fundamental condensed matter physics, proposals seek to control the topologically protected bulk or boundary states electrically, or even induce topological phase transitions to engender switching functionality. Induction of superconducting pairing in 2D TIs strives to realize non-Abelian quasiparticles, promising avenues towards fault-tolerant topological quantum computing. This roadmap aims to present a status update of the field, reviewing recent advances and remaining challenges in theoretical understanding, materials synthesis, physical characterization and, ultimately, device perspectives.

Weber, Bent (ORCID:000000018586127X)↗

Time-Resolved Spectroscopy of Insulator-Metal Transitions: Exploring Low-Energy Dynamics in Strongly Correlated Systems. Final Report

Transition metal oxides (TMOs) have attracted much attention in recent years. The strong coupling between charge, spin, and orbital degrees of freedom creates novel functional properties. The research at the interplay between ferromagnetism, ferroelectricity and conductivity provides a promising way to the development of future spintronic devices. The interface characterization of multifunctional oxide heterostructures is crucial to understand deeply the magnetic response, spin injection and spin transport. In year one, we characterized optically the magnetic property with the method of magnetization-induced second-harmonic generation (MSHG), which is a sensitive technique to selectively probe the interface where the spatial inversion symmetry is broken. The interface of n-type BaTiO 3 (BTO)/La 0.67 Sr 0.33 MnO 3 (LSMO) forms a Schottky barrier and displays a good diode effect. By applying an external electric field across the sample, we observe the magnetoelectric (ME) coupling effect to modulate the interface magnetization. The voltage dependent magnetic contrast sharply vanishes at positive voltage (applied to LSMO contact) and reveals a ferromagnetic (FM)-to- antiferromagnetic (AFM) transition occurring at the interface, while the magneto-optic Kerr effect (MOKE) indicates that the bulk property is not affected. The strain mediated mechanism and ferroelectric (FE) polarization induced charge medicated mechanism are both discussed, but they do not play an important role in the observed magnetization transition. A new mechanism is proposed - the injected minority spins through strong Hund's interaction with the local magnetic moments at positive voltage weaken the double-exchange interaction of nearby Mn e g electrons, thereby reducing the ferromagnetic (FM) ordering. The dominant superexchange interaction of localized t 2g electrons finally leads to the AFM configuration. By reducing the electron carrier concentration of BTO, a positive voltage shift of the transition is observed. The oxygen richer sample with lower carrier concentration requires a higher voltage to increase the hole doping level of LSMO to induce the interfacial AFM phase. By inserting a thin (1nm) La 0.5 Ca 0.5 MnO 3 layer between BTO and LSMO, the interface magnetic response from LSMO is enhanced. In year two, a non-multiferroic heterostructure SrTiO 3 (STO)/ La 0.5 Ca 0.5 MnO 3 (LCMO)/La 0.67 Sr 0.33 MnO 3 (LSMO) was studied. In this system, the interface FM-AFM transition is observed at negative voltage. The STO layer may act as a hole-donating layer, which induces the hole transfer to LSMO making it overdoped, while the LCMO interlayer at the 0.5 hole doping level displays complicated CE type AFM phase. Thus the AFM phase is dominant at the interface and electron accumulation is required to induce the FM phase by applying a negative voltage. For oxygen rich sample, the magnetic MSHG loop reappears at high positive voltage (around +2.5 V). At high doping level (x > 0.5), LSMO exhibits A-type AFM order, consisting of AFM superexchange coupling between adjacent layers and intralayer FM double-exchange coupling. The less tensile strain of STO and LSMO due to a smaller lattice mismatch as compared to BTO would result in a weaker interlayer coupling . Thus, interfacial A-type AFM order can occur in STO/LCMO/LSMO heterostructure at high hole doping concentration. The study of ME coupling of multifunctional oxide heterostructures is definitely important to the development and performance of future spintronic devices. The results presented here regarding the interfacial magnetic transition controlled by an external electric field offer some new perspective to study the spin transport of magnetic tunnel junctions.

36 MATERIALS SCIENCE↗

Development of MKIDs for Measurement of the Cosmic Microwave Background with the South Pole Telescope

We present details of the design, simulation, and initial test results of prototype detectors for the fourth-generation receiver of the South Pole Telescope (SPT). Optimized for the detection of key secondary anisotropies of the cosmic microwave background (CMB), SPT-3G+ will measure the temperature and polarization of the mm/sub-mm sky at 220, 285, and 345 GHz, beyond the peak of the CMB blackbody spectrum. The SPT-3G+ focal plane will be populated with microwave kinetic inductance detectors (MKIDs), allowing for significantly increased detector density with reduced cryogenic complexity. We present simulation-backed designs for single-color dual-polarization MKID pixels at each SPT-3G+ observation frequency. We further describe design choices made to promote resonator quality and uniformity, enabling us to maximize the available readout bandwidth. We also discuss aspects of the fabrication process that enable rapid production of these devices and present an initial dark characterization of a series of prototype devices.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Screen printable copper pastes for silicon solar cells

The current work demonstrates the successful metallization of a PERC silicon solar cell with screen-printable copper (Cu) paste that is sintered at elevated temperature in air atmosphere. The existing state of the art in Silicon (Si) solar cell metallization is silver (Ag) paste; Cu cost is 1/100th the cost of Ag and has a comparable conductivity. However, Cu undergoes rapid oxidation at elevated temperatures and the high diffusion of Cu into Si restricts its usage in the metallization of silicon solar cells. In this paper, a Cu paste containing a proprietary mixture of antioxidant additives and diffusion inhibitors was used to make front gridlines on PERC cells. The Cu-printed cells were fired in an IR belt furnace with a peak temperature of 576°C in air atmosphere. The solar cells discussed here reached an efficiency of 19%, which is 88% of the efficiency measured for a commercial Ag-printed cell. The working devices were further characterized using STEM, EDX, ToF-SIMS and long-term suns-V oc studies demonstrating an absence of Cu diffusion. Furthermore, thermally stressing the Cu-printed solar cells yielded a reduction of less than 1.9% of the initial pseudo fill factor (pFF) after 1000 hours at 200°C. Here, the shunt resistance of cells monitored over 3 years remained within 2.5% of its initial value, which demonstrates the effectiveness of the Cu diffusion barrier.

14 SOLAR ENERGY↗