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At least 307 records · Page 17
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NASA GPM Status and Future Activities

The joint U.S.-Japan Global Precipitation Measurement (GPM) mission is approaching a decade of operations, and continues to pursue research, dataset production, and outreach related to precipitation. Key activities over the last year were the release of an improved “Version 07” of all GPM precipitation and latent heating products, boosting the orbit of the GPM Core Observatory (GPM CO) to 435 km, and improving quality control on precipitation retrievals from the GPM constellation of passive microwave satellites. This presentation summarizes key improvements to the GPM products and provides some examples of the changes between Versions 06 and 07 in algorithm performance. One important operational change that affected Version 07 is that the scanning strategy for the Ka-band radar channel changed in May 2018; all products that depend on Ka were revised to accommodate this change. For example, in Version 07 the Goddard Profiling (GPROF) algorithm has implemented improvements in regions where orographic enhancement and suppression take place and where the surface is snowy/icy, and again covers radiometers reaching back to 1987. The Combined Radar Radiometer Algorithm (CORRA) now incorporates modified drop-size distribution constraints that substantially reduce bias. Revisions to the Convective-Stratiform Heating (CSH) algorithm employ new radiative transfer retrievals as well as accounting for terrain in the vertical coordinates. Each algorithm was adjusted to ensure continuity for each product across the boundary in 2014 between the predecessor Tropical Rainfall Measuring Mission (TRMM) and the GPM CO. The U.S. Science Team’s Integrated Multi-satellitE Retrievals for GPM (IMERG) was upgraded to account for distortions in the probability density function of regional precipitation rates due to weighted averaging in the Kalman filter used for “morphing” the passive microwave data. Maintaining the GPM CO orbital altitude in the the current very active solar cycle has been forcing the use of more fuel than planned and consequently shortening the forecasted life of the mission from the early 2030's to the late 2020's. It was considered vital to regain some of this lifetime to ensure overlap with the upcoming Atmosphere Observing System mission to provide crosscalibration of instruments. To accomplish this, the orbital altitude was raised from 400 to 435 km on 7-8 November 2023. Thereafter, the primary GPM CO algorithms had to be revised to account for the change in observing parameters. By meeting time this action should be complete. Recently, a screening algorithm based on auto-encoding was developed that uncovered 162 orbits (out of the many thousands of orbits across all years and all satellites) of passive microwave retrievals that had highly anomalous values. Removing these defective retrievals has improved the integrity of both the GPROF and IMERG records. However, the nature of the IMERG processing interacted sufficiently badly with the now-discovered anomalous orbits that it was necessary to completely reprocess the IMERG Final Run record, now labeled Version 07B. The presentation also considers major issues that require continued attention, including the use of machine learning algorithms and the operational challenge of swarms of “small”, perhaps short-lived satellites.

GPM↗
DOE OSTI2018

Impact of proton irradiation on conductivity and deep level defects in β-Ga 2 O 3

Single crystalline bulk and epitaxially grown gallium oxide (β–Ga 2 O 3 ) was irradiated by 0.6 and 1.9 MeV protons to doses ranging from 5 × 10 9 to 6 × 10 14 cm -2 in order to study the impact on charge carrier concentration and electrically active defects. Samples irradiated to doses at or above 2 × 10 13 cm -2 showed a complete removal of free charge carriers in their as-irradiated state, whereas little or no influence was observed below doses of 6 × 10 12 cm -2 . From measurements at elevated temperatures, a thermally activated recovery process is seen for the charge carriers, where the activation energy for recovery follow a second-order kinetics with an activation energy of ~1.2 eV. Combining the experimental results with hybrid functional calculations, we propose that the charge carrier removal can be explained by Fermi-level pinning far from the conduction band minimum (CBM) due to gallium interstitials (Ga i ), vacancies (V Ga ), and antisites (Ga O ), while migration and subsequent passivation of V Ga via hydrogen-derived or V O defects may be responsible for the recovery. Following the recovery, deep level transient spectroscopy (DLTS) reveals generation of two deep levels, with energy positions around 0.75 and 1.4 eV below the CBM. Of these two levels, the latter is observed to disappear after the initial DLTS measurements, while the concentration of the former increases. Here, we discuss candidate possibilities and suggest that the origins of these levels are more likely due to a defect complex than an isolated point defect.

36 MATERIALS SCIENCE↗
DOE OSTI2018

An Analysis of Limiting Cases for the Metal Oxide Film Growth Kinetics Using an Oxygen Defects Model Accounting for Transport and Interfacial Reactions

This work was motivated by the need to understand the passivation of metal surfaces to provide resistance against chemical degradation, given that corrosion is a major limiting factor in the operational lifetime of metals and their alloys. Here, a unified analysis for an oxide growth model was presented. The oxide growth model was consistent with the literature and accounted for the transport of oxygen defects through a growing oxide film, as well as the electrochemical reactions of oxygen defects at the metal/oxide and oxide/environment interfaces. A linear potential profile across the oxide film was assumed. The model was analyzed for different rate limiting steps in the physicochemical process and perturbation techniques were utilized when necessary. In conclusion, the investigation yielded the well-known linear, parabolic, logarithmic and integral rate laws and the conditions that led to these rate laws were discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Designing Passivating, Carrier-Selective Contacts for Photovoltaic Devices

"The first step towards building a high-efficiency solar cell is to develop an absorber with few recombination-active defects. Many photovoltaic technologies have already achieved this (monocrystalline Si, III-V materials grown on lattice-matched substrates, perovskites, polycrystalline CdTe and CIGS); those that have not (a-Si:H, organics) have been limited to low open-circuit voltage. The second step is to develop contacts that both inhibit surface recombination and allow for low-resistance collection of either only electrons or only holes. For most photovoltaic technologies, this step is both more difficult and less explored than the first, and we are unaware of a prescribed methodology for selecting materials for contacts to solar cells. We elucidate a unified, conceptual understanding of contacts within which existing contacting schemes can be interpreted and future contacting schemes can be imagined. Whereas a split of the quasi-Fermi levels of holes and electrons is required in the absorber of any solar cell to generate a voltage, carriers are eventually collected through a metallic wire in which no such quasi-Fermi-level split exists. We define a contact to be all layers between the bulk of the absorber and the recombination-active interface through which carriers are extracted. The quasi-Fermi levels must necessarily collapse at this interface, and thus the transition between maximal quasi-Fermi-level splitting (in the absorber) and no splitting occurs entirely in the contact. Depending on the solar cell architecture, the contact will usually extend from the surface of the absorber to the surface of a metal or transparent conductive oxide layer, and may include deposited or diffused doped layers (e.g., as in crystalline and thin-film Si cells) and heterostructure buffer layers (e.g., the CdS layer in a CdTe device). We further define a passivating contact as one that enables high quasi-Fermi-level splitting in the absorber (large “internal” voltage), where “high” is relative to the splitting dictated by bulk recombination. Finally, we define a carrier-selective contact as one that enables a high “external” voltage measured across the contacts, where “high” is relative to the internal voltage. With these definitions, passivating contacts are those that allow only electrons, only holes, or neither electrons or holes to transport from the absorber to any position in the contact that has recombination-active defects. An excellent example of this is a SiNx layer on a Si wafer: the layer removes dangling bonds at the wafer surface (where there are both electrons and holes) and does not allow either carrier type to travel to its outermost surface, where there are undoubtedly defects. Carrier-selective contacts are then passivating contacts that also allow for low-impedance flow of either electrons or holes (but not both) to the recombination-active, extracting interface. The most common example is a heavily doped layer that establishes an electric field at the absorber surface, which then “filters” the carriers that may pass to the contact according to the sign of their charge.

14 SOLAR ENERGY↗
DOE OSTI2023

Microdynamics of active particles in defect-rich colloidal crystals

Hypothesis. Because they are self-propulsive, active colloidal particles can interact with their environment in ways that differ from passive, Brownian particles. Here, we explore how interactions in different microstructural regions may contribute to colloidal crystal annealing. Experiments. We investigate active particles propagating in a quasi-2D colloidal crystal monolayer produced by alternating current electric fields (active-to-passive particle ratio ~ 1:720). The active particle is a platinum Janus sphere propelled by asymmetric decomposition of hydrogen peroxide. Crystals are characterized for changes in void properties. The mean-squared-displacement of Janus particles are measured to determine how active microdynamics depend on the local microstructure, which is comprised of void regions, void-adjacent regions (defined as within three particle diameters of a void), and interstitial regions. Findings. At active particle energy E A = 2.55 k B T, the average void size increases as much as three times and the average void anisotropy increases about 40% relative to the passive case. Further, the average microdynamical enhancement, <δ(t)>, of Janus particles in the crystal relative to an equivalent passive Janus particle is reduced compared to that of a free, active particle (<δ(t) > is 1.88 ± 0.04 and 2.66 ± 0.08, respectively). The concentration of active particles is enriched in void and void-adjacent regions. Active particles exhibit the greatest change in dynamics relative to the passive control in void-adjacent regions (<δ(t)> = 2.58 ± 0.06). The results support the conjecture that active particle microdynamical enhancement in crystal lattices is affected by local defect structure.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Interface effect of Fe and Fe 2 O 3 on the distributions of ion induced defects

The stability of structural materials in extreme nuclear reactor environments—with high temperature, high radiation, and corrosive media—directly affects the lifespan of the reactor. In such extreme environments, an oxide layer on the metal surface acts as a passive layer protecting the metal underneath from corrosion. To predict the irradiation effect on the metal layer in these metal/oxide bilayers, nondestructive depth-resolved positron annihilation lifetime spectroscopy (PALS) and complementary transmission electron microscopy (TEM) were used to investigate small-scale defects created by ion irradiation in an epitaxially grown (100) Fe film capped with a 50 nm Fe 2 O 3 oxide layer. In this study, the evolution of induced vacancies was monitored, from individual vacancy formation at low doses—10 –5 dpa—to larger vacancy cluster formation at increasing doses, showing the sensitivity of positron annihilation spectroscopy technique. Furthermore, PALS measurements reveal how the presence of a metal–oxide interface modifies the distribution of point defects induced by irradiation. TEM measurements show that irradiation induced dislocations at the interface is the mechanism behind the redistribution of point defects causing their accumulation close to the interface. Finally, this work demonstrates that the passive oxide layers formed during corrosion impact the distribution and accumulation of radiation induced defects in the metal underneath and emphasizes that the synergistic impact of radiation and corrosion will differ from their individual impacts.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Understanding the origin of Tabula Rasa-induced defects in n-type Cz c-Si: The case of nitrogen atmosphere

Phosphorus-doped Czochralski-grown silicon (Cz-Si) has been gaining market share in the large-scale manufacturing of high-efficiency silicon (Si)-based photovoltaic (PV) devices thanks to higher carrier lifetimes than their boron-doped counterpart. However, the fabrication of n-type Cz-Si based solar cells often requires process steps with much higher temperatures and longer times than p-type Silicon. Defect interaction with the high temperatures during such processes tend to be detrimental to the n-type Cz-Si carrier lifetime, therefore limiting the final device efficiency. Short thermal anneals before cell processing, known as Tabula Rasa (TR), have been proposed to mitigate the thermally induced lifetime degradation during n-type Cz-Si solar cell fabrication. This work thoroughly investigates the defects responsible for the lifetime degradation after TR in a N 2 atmosphere treatment. We use temperature-injection-dependent lifetime spectroscopy and the thickness variation method to decouple the effects of TR treatment in the bulk and the surface of the n-type Cz-Si wafers. Using the defect parameter contour mapping (DPCM), we identify the defect energy level (E t ) and the capture cross-section ratio (k) of the most likely process-induced defect, which aligns with previously proposed Si vacancy-associated defects. The DPCM reveals that these vacancy-associated defects have a shallow energy level E t - E v ~0.13 eV and very efficient electron capture cross section k~600. Unexpectedly, the bulk degradation due to vacancy defects in the volume of the wafer, is accompanied by a significant increase in the surface recombination as well. Through evaluating the surface recombination velocity temperature- and injection dependence, we show that after TR, at room temperature and for an injection level of 10 15 cm -3 , in a wafer passivated with a-Si:H(i) the surface recombination dominates the overall lifetime response. Here we hypothesize that the near surface vacancy-associated bulk defects play a role in lowering the electron diffusion current into the a-Si:H(i) from the c-Si(n) reducing the field-effect passivation.

14 SOLAR ENERGY↗
DOE OSTI2019

Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors

Defects in conventional semiconductors substantially lower the photoluminescence (PL) quantum yield (QY), a key metric of optoelectronic performance that directly dictates the maximum device efficiency. Here, two-dimensional transition-metal dichalcogenides (TMDCs), such as monolayer MoS 2 , often exhibit low PL QY for as-processed samples, which has typically been attributed to a large native defect density. We show that the PL QY of as-processed MoS 2 and WS 2 monolayers reaches near-unity when they are made intrinsic through electrostatic doping, without any chemical passivation. Surprisingly, neutral exciton recombination is entirely radiative even in the presence of a high native defect density. This finding enables TMDC monolayers for optoelectronic device applications as the stringent requirement of low defect density is eased.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Understanding and reducing deleterious defects in the metastable alloy GaAsBi

Technological applications of novel metastable materials are frequently inhibited by abundant defects residing in these materials. Using first-principles methods, we investigate the defect thermodynamics and phase segregation in the technologically important metastable alloy GaAsBi. Our calculations predict defect energy levels in good agreement with those from numerous previous experiments and clarify the defect structures giving rise to these levels. We find that vacancies in some charge states become metastable or unstable with respect to antisite formation, and this instability is a general characteristic of zincblende semiconductors with small ionicity. The dominant point defects that degrade the electronic and optical performances are predicted to be As Ga , Bi Ga , As Ga +Bi As , Bi Ga +Bi As , V Ga and V Ga +Bi As , of which the first four and last two defects are minority-electron and minority-hole traps, respectively. V Ga is also observed to have a critical role in controlling metastable Bi supersaturation by mediating Bi diffusion and clustering. To reduce the influences of these deleterious defects, we suggest shifting the growth away from an As-rich condition and/or using hydrogen passivation to reduce the minority-carrier traps. In conclusion, we expect this work to aid in the applications of GaAsBi for novel electronic and optoelectronic devices and to illuminate the control of deleterious defects in other metastable materials.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Evolution of silicon bulk lifetime during III–V‐on‐Si multijunction solar cell epitaxial growth

Abstract The evolution of Si bulk minority carrier lifetime during the heteroepitaxial growth of III–V on Si multijunction solar cell structures via metal‐organic chemical vapor deposition (MOCVD) has been analyzed. In particular, the impact on Si lifetime resulting from the four distinct phases within the overall MOCVD‐based III–V/Si growth process were studied: (1) the Si homoepitaxial emitter/cap layer; (2) GaP heteroepitaxial nucleation; (3) bulk GaP film growth; and (4) thick GaAs y P 1‐y compositionally graded metamorphic buffer growth. During Phase 1 (Si homoepitaxy), an approximately two order of magnitude reduction in the Si minority carrier lifetime was observed, from about 450 to ≤1 µs. However, following the GaP nucleation (Phase 2) and thicker film (Phase 3) growths, the lifetime was found to increase by about an order of magnitude. The thick GaAs y P 1‐y graded buffer was then found to provide further recovery back to around the initial starting value. The most likely general mechanism behind the observed lifetime evolution is as follows: lifetime degradation during Si homoepitaxy because of the formation of thermally induced defects within the Si bulk, with subsequent lifetime recovery due to passivation by fast‐diffusing atomic hydrogen coming from precursor pyrolysis, especially the group‐V hydrides (PH 3 , AsH 3 ), during the III–V growth. These results indicate that the MOCVD growth methodology used to create these target III–V/Si solar cell structures has a substantial and dynamic impact on the minority carrier lifetime within the Si substrate. Copyright © 2015 John Wiley & Sons, Ltd.

García‐Tabarés, Elisa↗
DOE OSTI2016

Infrared absorption of hydrogen-related defects in ammonothermal GaN

Polarization controlled Fourier transform infrared (FTIR) absorption measurements were performed on a high quality m-plane ammonothermal GaN crystal grown using basic chemistry. The polarization dependence of characteristic absorption peaks of hydrogen-related defects at 3000–3500 cm{sup −1} was used to identify and determine the bond orientation of hydrogenated defect complexes in the GaN lattice. Majority of hydrogen was found to be bonded in gallium vacancy complexes decorated with one to three hydrogen atoms (V{sub Ga}-H{sub 1,2,3}) but also hydrogenated oxygen defect complexes, hydrogen in bond-center sites, and lattice direction independent absorption were observed. Absorption peak intensity was used to determine a total hydrogenated V{sub Ga} density of approximately 4 × 10{sup 18} cm{sup −3}, with main contribution from V{sub Ga}-H{sub 1,2}. Also, a significant concentration of electrically passive V{sub Ga}-H{sub 3} was detected. The high density of hydrogenated defects is expected to have a strong effect on the structural, optical, and electrical properties of ammonothermal GaN crystals.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Defect Spirograph: Dynamical Behavior of Defects in Spatially Patterned Active Nematics

We report that topological defects in active liquid crystals can be confined by introducing gradients of activity. Here, we examine the dynamical behavior of two defects confined by a sharp gradient of activity that separates an active circular region and a surrounding passive nematic material. Continuum simulations are used to explain how the interplay among energy injection into the system, hydrodynamic interactions, and frictional forces governs the dynamics of topologically required self-propelling + 1/2 defects. Our findings are rationalized in terms of a phase diagram for the dynamical response of defects in terms of activity and frictional damping strength. Different regions of the underlying phase diagram correspond to distinct dynamical modes, namely immobile defects, steady rotation of defects, bouncing defects, bouncing-cruising defects, dancing defects, and multiple defects with irregular dynamics. These dynamic states raise the prospect of generating synchronized defect arrays for microfluidic applications.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Passive Low-Energy Nuclear-Recoil Detection with Color Centers

Crystal-damage events such as tracks and point defects have been used to record and detect radiation for a long time and recently they have been proposed as a means for dark-matter detection. Color centers can be read out optically and we propose a scheme based on selective plane illumination microscopy for micrometer-scale imaging of large volumes corresponding to kilogram mass detectors. This class of detectors would be passive and would operate at room temperature and we call this the passive low-energy optical color-center nuclear-recoil (PALEOCCENE) detection method. We apply these concepts to the detection of reactor neutrinos using coherent elastic neutrino nucleus scattering (CE ν NS). Crystal-damage formation energies are intrinsically on the order of 25 eV, resulting in similarly low nuclear-recoil thresholds. Furthermore, this would enable the observation of reactor-neutrino CE ν NS with detectors as small as 10 g. Additionally, a competitive search for spin-dependent dark-matter scattering down to a dark-matter mass of 0.3 GeV could be possible. Passive crystal detectors might also be attractive for nuclear-nonproliferation safeguards if used to monitor reactor power and to put limits on plutonium production. The passive nature and small footprint of the proposed detectors implies that these might fit well within accepted reactor-safeguards operations.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2016

Impact of extended defects on recombination in CdTe heterostructures grown by molecular beam epitaxy

Heterostructures with CdTe and CdTe{sub 1-x}Se{sub x} (x ∼ 0.01) absorbers between two wider-band-gap Cd{sub 1-x}Mg{sub x}Te barriers (x ∼ 0.25–0.3) were grown by molecular beam epitaxy to study carrier generation and recombination in bulk materials with passivated interfaces. Using a combination of confocal photoluminescence (PL), time-resolved PL, and low-temperature PL emission spectroscopy, two extended defect types were identified and the impact of these defects on charge-carrier recombination was analyzed. The dominant defects identified by confocal PL were dislocations in samples grown on (211)B CdTe substrates and crystallographic twinning-related defects in samples on (100)-oriented InSb substrates. Low-temperature PL shows that twin-related defects have a zero-phonon energy of 1.460 eV and a Huang-Rhys factor of 1.50, while dislocation-dominated samples have a 1.473-eV zero-phonon energy and a Huang-Rhys factor of 1.22. The charge carrier diffusion length near both types of defects is ∼6 μm, suggesting that recombination is limited by diffusion dynamics. For heterostructures with a low concentration of extended defects, the bulk lifetime was determined to be 2.2 μs with an interface recombination velocity of 160 cm/s and an estimated radiative lifetime of 91 μs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Gerischer Electrochemistry Today

Semiconductor photoelectrochemistry is a dynamic and interdisciplinary field at the forefront of research in solar fuels, energy conversion, and catalysis. Here, this Perspective captures the collective insights from the second Gerischer Electrochemistry Today Symposium, held at Colorado State University in Fort Collins, CO, in August 2024, which convened leading researchers, early-career scientists, and industry partners to define the critical next steps for the field. Through interactive sessions, technical talks, panel discussions, and training initiatives─including a Semiconductor Electrochemistry Bootcamp─the symposium emphasized three pillars of advancement: (i) facilitating the exchange of new ideas in semiconductor electrochemistry and charge separation; (ii) fostering the development of future researchers, research topics, and participation in the semiconductor workforce; and (iii) building community. This Energy Focus distills key themes from the meeting and identifies major knowledge gaps in the following areas: mechanisms of charge separation and recombination, role of defects and disorder, dynamic and operando characterization methods, interfacial chemistry and surface passivation, theoretical and modeling limitations, and standardization and benchmarking. The inclusive and collaborative structure of the symposium enabled the generation of this comprehensive report that will serve as a roadmap for fundamental and applied research in the rapidly evolving field of semiconductor electrochemistry over the next decade.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

Gallium-Doped Poly-Si:Ga/SiO 2 Passivated Emitters to n-Cz Wafers With iV oc >730 mV

Here, we form gallium-doped poly-Si:Ga/SiO 2 passivated contacts on n-type Czochralski (n-Cz) wafers using ion implantation of Ga and Ga-containing spin-on dopants. After annealing and passivation with Al 2 O 3 , the contacts exhibit i Voc values of >730 mV with corresponding Joe values of <5 fA/cm 2 . These are among the best-reported values for p-type poly-Si/SiO 2 contacts. Secondary ion mass spectroscopic depth profile data show that, in contrast to B, Ga does not pileup at the SiO 2 interface in agreement with its known high diffusivity in SiO 2 . This lack of Ga pileup may imply fewer dopant-related defects in the SiO 2 , compared with B dopants, and account for the excellent passivation.

14 SOLAR ENERGY↗
DOE OSTI2014

Interaction of Sn atoms with defects introduced by ion implantation in Ge substrate

The interaction of Sn atoms with defects induced by Sn implantation of Ge substrates with antimony (Sb) as an n-type dopant and the impact of H{sub 2} annealing on these defects were investigated by comparison with defects induced by Ge self-implantation. In the Ge samples implanted with either Sn or Ge, and annealed at temperatures of less than 200 °C, divacancies, Sb-vacancy complexes with single or double acceptor-like states, and defects related to Sb and interstitial Ge atoms were present. On the other hand, after annealing at 500 °C in an N{sub 2} or H{sub 2} atmosphere, defects with different structures were observed in the Sn-implanted samples by deep level transition spectroscopy. The energy levels of the defects were 0.33 eV from the conduction band minimum and 0.55 eV from the valence band maximum. From the capacitance-voltage (C-V) characteristics, interaction between Sn atoms and defects after annealing at 500 °C was observed. The effect of H{sub 2} annealing at around 200 °C was observed in the C-V characteristics, which can be attributed to hydrogen passivation, and this effect was observed in both the Ge- and Sn-implanted samples. These results suggest the presence of defects that interact with Sn or hydrogen atoms. This indicates the possibility of defect control in Ge substrates by Sn or hydrogen incorporation. Such defect control could yield high-performance Ge-based devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Defects and persistent conductivity in SrTiO{sub 3}

Strontium titanate (SrTiO{sub 3}) is often used as a substrate for oxide thin films such as high-temperature superconductors. It has the perovskite structure and an indirect band gap of 3.25 eV. Our prior work showed that hydrogen impurities form a defect complex that contains two hydrogen atoms. The complex was tentatively attributed to a passivated strontium vacancy. Alternatively, it could be a partially passivated titanium vacancy. In order to create titanium vacancies, we annealed samples in an evacuated ampoule with SrO powder. These samples show unexpected behavior. After illuminating with sub-gap light, the free-electron concentration increases significantly. After the light is turned off, the high conductivity persists at room temperature. We attribute persistent photoconductivity (PPC) to the excitation of an electron from a vacancy into the conduction band, with a low recapture rate.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗