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A new fabrication process is being developed which significantly improves the efficiency of metal-semiconductor solar cells. The resultant effect, a marked increase in the open-circuit voltage, is produced by the addition of an interfacial layer oxide on the semiconductor. Cells using gold on n-type gallium arsenide have been made in small areas (0.17 sq cm) with conversion efficiencies of 15% in terrestrial sunlight.
56-percent efficient external-cavity-resonant second-harmonic generation of a diode-laser pumped, CW single-axial-mode Nd:YAG laser is reported. A theory of external doubling with a resonant fundamental is presented and compared to experimental results for three monolithic cavities of nonlinear MgO:LiNbO3. The best conversion efficiency was obtained with a 12.5-mm-long monolithic ring cavity doubler, which produced 29.7 mW of CW, single-axial model 532-nm radiation from an input of 52.5 mW.
The advances in solar cell efficiency, radiation tolerance, and cost over the last decade are reviewed. Potential performance of thin-film solar cells in space are discussed, and the cost and the historical trends in production capability of the photovoltaics industry are considered with respect to the requirements of space power systems. Concentrator cells with conversion efficiency over 30%, and nonconcentrating solar cells with efficiency over 25% are now available, and advanced radiation-tolerant cells and lightweight, thin-film arrays are both being developed. Nonsolar applications of solar cells, including thermophotovoltaics, alpha- and betavoltaics, and laser power receivers, are also discussed.
The main purpose of this research program is to investigate potential semiconductor materials and their multi-band-gap MQW (multiple quantum wells) structures for high efficiency solar cells for aerospace and commercial applications. The absorption and PL (photoluminescence) spectra, the carrier dynamics, and band structures have been investigated for semiconductors of InP, GaP, GaInP, and InGaAsP/InP MQW structures, and for semiconductors of GaAs and AlGaAs by previous measurements. The barrier potential design criteria for achieving maximum energy conversion efficiency, and the resonant tunneling time as a function of barrier width in high efficiency MQW solar cell structures have also been investigated in the first two years. Based on previous carrier dynamics measurements and the time-dependent short circuit current density calculations, an InAs/InGaAs - InGaAs/GaAs - GaAs/AlGaAs MQW solar cell structure with 15 bandgaps has been designed. The absorption and PL spectra in InGaAsP/InP bulk and MQW structures were measured at room temperature and 77 K with different pump wavelength and intensity, to search for resonant states that may affect the solar cell activities. Time-resolved IR absorption for InGaAsP/InP bulk and MQW structures has been measured by femtosecond visible-pump and IR-probe absorption spectroscopy. This, with the absorption and PL measurements, will be helpful to understand the basic physics and device performance in multi-bandgap InAs/InGaAs - InGaAs/InP - InP/InGaP MQW solar cells. In particular, the lifetime of the photoexcited hot electrons is an important parameter for the device operation of InGaAsP/InP MQW solar cells working in the resonant tunneling conditions. Lastly, time evolution of the hot electron relaxation in GaAs has been measured in the temperature range of 4 K through 288 K using femtosecond pump-IR-probe absorption technique. The temperature dependence of the hot electron relaxation time in the X valley has been measured.
Compact, highly efficient, 3.0 to 3.4 m light emitters are in demand for spectroscopic analysis and identification of chemical substances (including methane and formaldehyde), infrared countermeasures technologies, and development of advanced infrared scene projectors. The need for these light emitters can be currently addressed either by bulky solid-state light emitters with limited power conversion efficiency, or cooled Interband Cascade (IC) semiconductor lasers. Researchers here have developed a breakthrough approach to fabrication of diode mid-IR lasers that have several advantages over IC lasers used for the Mars 2009 mission. This breakthrough is due to a novel design utilizing the strain-engineered quantum-well (QW) active region and quinternary barriers, and due to optimization of device material composition and growth conditions (growth temperatures and rates). However, in their present form, these GaSb-based laser diodes cannot be directly used as a part of sensor systems. The device spectrum is too broad to perform spectroscopic analysis of gas species, and operating currents and voltages are too high. In the current work, the emitters were fabricated as narrow-ridge waveguide index-guided lasers rather than broad stripe-gain guided multimode Fabry-Perot (FP) lasers as was done previously. These narrow-ridge waveguide mid-IR lasers exhibit much lower power consumptions, and can operate in a single spatial mode that is necessary for demonstration of single-mode distributed feedback (DBF) devices for spectroscopic applications. These lasers will enable a new generation of compact, tunable diode laser spectrometers with lower power consumption, reduced complexity, and significantly reduced development costs. These lasers can be used for the detection of HCN, C2H2, methane, and ethane.
A general device-analysis program has been utilized to study the efficiency of silicon solar cells. The analysis is applied to specific geometries of both n(+)-p and n(+)-p-p(+) solar cells, and involves a numerical solution of the basic transport and continuity equations. This approach allows solutions that are free of typical limiting assumptions involved in solving the device equations as well as solutions relating to lifetime, mobility variations, and diffused-region profiles. The analysis includes available empirical information on diffusion length, mobility, and lifetime as a function of doping, as well as a Gaussian profile for the diffused region. Results are presented which illustrate the limitations of efficiency as a function of doping. It is found that the maximum efficiencies for both types of cell converge at lower resistivities to around 16% with air-mass-zero radiation and a single-layer absorbing-SiO antireflecting film. It is also found that the minority-carrier lifetime, both in the n(+) surface and p-type bulk regions, presents serious limitations to conversion efficiency, particularly in the low-resistivity cells.
Fifty micron thick cells 2x4 sq cm area with coplanar back contacts were made with good yield, and with output equivalent to conventional top/bottom contact cells of the same thickness. A wraparound junction (WAJ) design was selected, and used successfully. The low alpha cells delivered were all above 12%, the average efficiency was 13% and the best was 14%. The overall yield was 35 to 40%, comparable to that for conventional 50 micron cells. The process sequence was moderately complex, but showed good reproducibility. The CBC cells performed wall under several important environmental tests. High alpha CBC cells were made, with about 1% increase in conversion efficiency. The most important design criteria were the choice of back surface N+ and P+ areas.
Eight In(Al)GaAs P/N junctions grown epitaxially on a semi-insulating wafer were monolithically integrated in series to boost the approx. 0.4 V photovoltage per typical In(Al)GaAs junction to over 3 volts for the 1 sq cm laser power converter (LPC) chip. This is the first report of a multijunction LPC for the 1.3 to 1.5 microns wavelength range. This wavelength range is optimum for laser power transmission over low- loss single-mode silica optical fiber, and is also useful with high efficiency 1.315 microns iodine lasers in free-space power transmission. Advantages of multijunction LPC designs include the need for less circuitry for power reconditioning and the potential for lower I(exp 2)R power loss. As an example, these LPCs have a responsivity of approx.1 amp/watt. With a single junction LPC, 100 watts/sq cm incident power would lead to about 100 A/sq cM short-circuit current at approx. 0.4 V open-circuit voltage. One disadvantage is the large current would lead to a large 1(exp 2)R loss which would lower the fill factor so that 40 wattS/sq cm output would not be obtained. Another is that few circuits are designed to work at 0.4 volts, so DC-DC power conversion circuitry would be necessary to raise the voltage to a reasonable level. The multijunction LPC being developed in this program is a step toward solving these problems. In the above example, an eight-junction LPC would have eight times the voltage, approx. 3 V, so that DC-DC power conversion may not be needed in many instances. In addition, the multijunction LPC would have 1/8 the current of a single-junction LPC, for only 1/64 the 1(exp 2)R loss if the series resistance is the same. Working monolithic multijunction laser power converters (LPCs) were made in two different compositions of the ln(x)Al(y)Ga(l-x-y)As semiconductor alloy, In(0.53)Ga(0.47)As (0.74 eV) and In(0.5)Al(0.1)Ga(0.4)As (0.87 eV). The final 0.8 sq cm LPCs had output voltages of about 3 volts and output currents up to about one-half amp. Maximum 1.3 microns power conversion efficiencies were approx. 22%. One key advantage of multijunction LPCs is that they have higher output voltages, so that less DC-DC power conversion circuitry is needed in applications.
Detailed theoretical analysis of three different modes or types of high efficiency oscillation in a PIN diode are presented. For the TRAPATT mode in a PIN diode, it is shown that a traveling avalanche zone is not necessary to generate a dense trapped plasma. An economical computer program for TRAPATT oscillations in a PIN diode is described. Typical results of diode power, dc-to-RF conversion efficiency, and required circuit impedances are presented for several different current waveforms. A semianalytical solution for a second type of high efficiency mode in a PIN diode is derived assuming a rectangular current waveform. A quasi-static approximation is employed to derive a semianalytical solution for the voltage across a PIN diode in a third mode, where avalanching occurs during a major portion of a half cycle. Calculations for this mode indicate that the power increases proportionally to the magnitude of the drive current with a small decrease in efficiency relative to the ordinary TRAPATT mode. An analytical solution is also given for a PIN diode, where it is assumed that the ionization coefficient is a step function. It is shown that the step-ionization approximation permits one to draw possible patterns of avalanche region in the depletion layer as a function of time. A rule governing admissible patterns is derived and an example solution given for one admissible pattern. Preliminary experimental results on the high-efficiency oscillations are presented and discussed. Two different experimental circuits, which used channel-dropping filters to provide independent harmonic tuning, are described. Simpler circuits used to produce high-efficiency oscillations are discussed. Results of experiments using inexpensive Fairchild FD300 diodes are given.
A highly efficient, versatile, single frequency 2-micron pulsed laser can be used in a pulsed Differential Absorption Lidar (DIAL) / Integrated Path Differential Absorption (IPDA) instrument to make precise, high-resolution measurements to investigate sources and sinks of CO2. For a direct detection IPDA lidar, the desired 2 m Ho:YLF laser should generate 30-40 mJ pulses at the repetition rate of 100 to 200 Hz, with short pulse length (<100 ns) and better than 2% wall plug efficiency. A Tm fiber laser in-band pumped Ho:YLF laser has been developed to meet this technical challenge. This Ho:YLF laser is designed in a four mirror ring resonator with bow tie configuration, which helps to obtain high beam quality. It is end-pumped by a 40 W linearly polarized Tm fiber laser at 1.94μm. The resonator length is 1.10 meters with output coupler reflectivity at 45%. The laser crystal size is 3 x 3 x 60 mm (w, h, l) with a doping concentration of 0.5% Holmium. The laser beam and pump beam are mode-matched in the active medium. Thus, the pump and laser beams have the same confocal parameters. Mode-matching is also helpful for operating the laser in a single transverse mode. The laser beam waist is slightly less than 0.5 mm at the center of the laser crystal. Based on quasi-four level modeling, pump absorption and saturation depend on laser intensity. Laser amplification and saturation also depend on the pump intensity in the crystal. The laser is injection seeded to obtain the single frequency required by an IPDA lidar measurement. The seed beam is entered into the resonator through an output coupler. The laser is mounted on a water cooled optical bench for stable and reliable operation. The size of the optical bench is 22.16 x 9.20 x 1.25 inches. It is stiffened so that the laser can be operated in any orientation of the optical bench. This packaged Ho:YLF laser is designed for either mobile trailer or airborne platform operation. The engineering prototype Ho:YLF laser has been fully characterized to demonstrate laser performance. Figure 1 shows the laser output power as a function of pump power at different pulse repetition rates from 100 Hz to 333 Hz. The threshold of the laser is less than 14 W. The slope efficiencies are 28%, 40%, 41% and 43% for pulse repetition rates of 100, 200, 250 and 333 Hz, respectively. Maximum power increases with the pulse repetition rate. Output power of 4.2 W, 6 W, 6.7 W, and 7.7 W is achieved for pulse repetition rates of 100, 200, 250 and 333Hz, respectively. This represents the optical conversion efficiency of 16.7%, 22.4%, 23.7%, and 26.5% at these various pulse repletion rates. It is the most efficient and compact Ho:YLF laser demonstrated in the high pulse energy (>20mJ) and moderate pulse repetition rate (100's Hz) operation range. As shown in Figure 1, the maximum pulse energy at 100 Hz is 42 mJ. This is limited due to optical damage. The laser stability is characterized and found to be very stable. A relative pulse energy standard deviation of 2% was measured. The beam quality of the Ho:YLF was measured by a Spiricon infrared laser beam camera. Figure 2 shows the beam profile image of the laser. Both the X-profile of the beam (horizontal direction) and the Y-profile of the beam (vertical direction) are well fitted by a Gaussian profile. The qualitative beam quality measurement shows excellent beam quality in both axis. The M-square value for the laser beam is measured at 1.06 and 1.09 for the x and y axis respectively.-
Output of 1.25 J per pulse (1.064 micron) with an absolute optical efficiency of 28 percent and corresponding electrical efficiency of 10 percent was demonstrated in a diode-array-pumped Nd:YAG laser using a side-pumped rod geometry in a master-oscillator/power-amplifier configuration. In Q-switched operation, an output of 0.75 J in a 17-ns pulse was obtained. The fundamental laser output was frequency doubled in KTP with 60 percent conversion efficiency to obtain 0.45 J in a 16-ns pulse at 532 nm. The output beam had high spatial quality with pointing stability better than 40 microrad and a shot-to-shot pulse energy fluctuation of less than +/-3 percent.
Heterojunction diodes of indium tin oxide films sputtered on to p-silicon using ion-beam techniques display significant photovoltaic effects when exposed to sunlight. Galvanomagnetic and optical measurements confirm that the oxide films are highly degenerate transparent semiconductors. At a tin oxide concentration of 10%, an open-circuit voltage of 0.51 V was observed along with a short-circuit current of 32 mA/sq cm, a fill factor of 0.70, and a conversion efficiency of 12%. As the concentration was raised to 70%, the voltage remained steady, the current fell to 27 mA/sq cm, and the fill factor fell to 0.60
Two factors that may affect the quantification of NO and NO2 concentrations when using chemiluminescent analysis are investigated. The first is the dependence of the chemiluminescent intensity on competing third body quenching reactions. Relative quenching efficiencies are determined as a function of third body concentration for six different species that are common products of combustion. A mathematical expression is derived that allows calculation of the actual concentration of NO, given the indicated concentration of NO and the concentrations of the important third bodies. An example calculation is presented. The second factor investigated involves the conversion to NO of low molecular weight nitrogen-containing species, other than NO2, in commercial NOx converters. Conversion efficiencies for six species are determined using a commercial stainless steel catalyst at 920 K.
Preliminary results are presented of the efficient diode-pumped operation of a neodymium yttrium aluminum borate (NYAB) laser at 531.5 nm using two 1-W diode-laser arrays for the pump. With 1380 mW of CW power incident on the crystal, as much as 51 mW of 532.5-nm laser radiation was obtained with the unoptimized cavity. The corresponding optical-to-optical conversion efficiency was 3.7 percent. A plot of the output 531.5 nm vs incident 807 nm pump power is shown. The crystal output power was critically dependent on the rotational and translational adjustment of the NYAB crystal inside the cavity. It is suggested that a crystal cut at the exact phase matching angle, placed in a cavity with proper optimal reflection and transmission mirror coatings, and pumped at proper wavelength can result in higher output power. Thus, the NYAB output power approaches that of a CW intracavity frequency doubled Nd:YAG laser.
Double-drift GaAs IMPATT diodes were designed for V-band frequency operations and fabricated using molecular-beam epitaxy. The diodes were fabricated in two configurations: (1) circular mesa diodes with silver-plated (integrated) heat sinks: (2) pill-type diodes bonded to diamond heat sinks. Both configurations utilized a miniature quartz-ring package. Output power greater than 1 W CW was achieved at V-band frequencies from diodes on diamond heat sinks. The best conversion efficiency was 13.3 percent at 55.5 GHz with 1 W output power.
Two factors which may affect the quantification of NO and NO2 concentrations when using chemiluminescent analysis are investigated. The first is the dependence of the chemiluminescent intensity on competing third body quenching reactions. Relative quenching efficiencies are determined as a function of third body concentration for six different species which are common products of combustion. A mathematical expression is derived which allows calculation of the actual concentration of NO given the indicated concentration of NO and the concentrations of the important third bodies. An example calculation is presented. The second factor which is investigated involves the conversion of low molecular weight nitrogen containing species, other than NO2, in commercial NOx converters. Conversion efficiencies for six species were determined using a commercial stainless steel catalyst at 923 K.
A variety of mission concepts have been studied by NASA and the U. S. Department of Energy that would utilize low power Radioisotope Power Systems (RPS) for small probes, landers, rovers, and communication repeaters. These missions would contain science measuring instruments that could be distributed across planetary surfaces for operation in temporarily or permanently shadowed regions. High efficiency dynamic RPS could be mission enabling for science measurements on the moon, such as collecting real-time, event-based, or cumulative space radiation measurements including primary galactic cosmic rays (GCR), solar particle events (SPE), and secondary particles liberated during atmospheric and/or surface reactions. Small RPS would use fractional versions of the General Purpose Heat Source (GPHS) or Light Weight Radioisotope Heater Units (LWRHU), to heat the power conversion technologies. Capable of three to four times higher conversion efficiency than static technologies, dynamic RPS would provide an equal amount of power using less fuel or more power using an equal amount of fuel. Providing spacecraft with more power could decrease duty cycling of basic functions and increase the quality and abundance of science data. Low power Stirling convertors are being developed at NASA Glenn Research Center (GRC) to provide future micro spacecraft with electrical power by converting heat from one or more LWRHUs. An initial concept would convert eight Watts of heat to one Watt of electrical power output for science instruments and communication. The initial design, called Small Stirling Technology Exploration Power (smallSTEP), is 11 cm diameter X 32 cm long, weighs around 3 kg, and could be used to charge batteries or capacitors for higher power burst usage. Development of the 1-watt RPS includes maturation of a Stirling engine and linear alternator, an electronics controller, and an evacuated metal foil insulation package. Test hardware and facilities are being prepared for initial demonstration of the subassemblies in a laboratory environment.
A light source is described for the efficient generation of 1.54-micron for eye-safe aerosol lidar operation. The system is based upon an Nd:YAG laser at 1.06 micron which is then Raman-shifted in methane to produce light at the first Stokes wavelength of 1.54 micron. First Stokes light generated in the backward direction was retroreflected back into the Raman cell for amplification in the tail of the 10 ns pump beam. The energy conversion efficiency and the spatial beam quality of the amplified first Stokes were found to be adversely affected when operated at higher repetition rates due to a thermal gradient produced in the generation region. A Stokes energy of 25 mJ was obtained for a pumping energy of 140 mJ at a repetition rate of 10 Hz. The beam divergence of the amplified Stokes radiation was measured to be less than 1 mrad. The optimized results demonstrate the applicability of this radiation for eye-safe lidar measurements.