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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

T-Type Modular DC Circuit Breaker (T-Breaker) for Future DC Networks

The developed T-Type Modular DC Circuit Breaker (T-Breaker) technology offers an all-in-one solution to challenges in DC networks. This includes swift fault detection and protection, power transient stability, and power quality improvement, achieved through the utilization of wide bandgap (WBG) power semiconductors and energy storage devices. The T-Breaker not only facilitates rapid fault current detection and interruption but also implements fault current limiting through active insertion of storage devices or by operating WBG devices in the saturation region. Additionally, with the assistance of energy storage devices, potential overvoltage issues on power devices induced by control signal misalignment can be mitigated. The T-Breaker can be regulated to perform shunt current injection/absorption using the vertical arm and series voltage insertion via the horizontal arm, thereby enhancing DC system stability during voltage or load power fluctuation transients. The OSU team and Raytheon team actively worked together on designing, fabricating, assembling, and testing of two T-Breaker prototypes. The first prototype is rated at 1 kV, 500 A with half-bridge (unipolar) structure to validate the T-Breaker concept. The second prototype is rated at 20 kV, 50 A with full-bridge (bipolar) topology which can reach an efficiency of 99.977%, realize a power density of 60.2 MW/m3, and eliminate the 500-A fault current with a fault response time of around 20 µs. The prototypes show great feasibility of adopting this technology in multiple applications including electrified aircraft, super charging stations, data centers, etc.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2024

Efficient learning of t -doped stabilizer states with single-copy measurements

One of the primary objectives in the field of quantum state learning is to develop algorithms that are time-efficient for learning states generated from quantum circuits. Earlier investigations have demonstrated time-efficient algorithms for states generated from Clifford circuits with at most log ⁡ ( n ) non-Clifford gates. However, these algorithms necessitate multi-copy measurements, posing implementation challenges in the near term due to the requisite quantum memory. On the contrary, using solely single-qubit measurements in the computational basis is insufficient in learning even the output distribution of a Clifford circuit with one additional T gate under reasonable post-quantum cryptographic assumptions. In this work, we introduce an efficient quantum algorithm that employs only nonadaptive single-copy measurement to learn states produced by Clifford circuits with a maximum of O ( log ⁡ n ) non-Clifford gates, filling a gap between the previous positive and negative results.

Physics↗
DOE OSTI2023

Measuring qubit stability in a gate-based NISQ hardware processor

Some of the most problematic issues that limit the implementation of applications on Noisy Intermediate Scale Quantum (NISQ) machines are the adverse impacts of both incoherent and coherent errors. We conducted an in-depth study of coherent errors on a quantum hardware platform using a transverse field Ising model Hamiltonian as a sample user application. We report here on the results from these computations using several error mitigation protocols that profile these errors and provide an indication of the hardware qubit stability. Through a detailed set of measurements we identify inter-day and intra-day qubit calibration drift and the impacts of quantum circuit placement on groups of qubits in different physical locations on the processor. This paper also discusses how these measurements can provide a better understanding of these types of errors and how they may improve efforts to validate the accuracy of quantum computations.

Yeter-Aydeniz, Kübra↗
DOE OSTI2021

Influence of Inverter-Based Resources on Microgrid Protection: Part 1: Microgrids in Radial Distribution Systems

Microgrids are being deployed at a rising rate, primarily as a means of increasing power system resilience. Commonly, a microgrid today includes at least some inverter-based resources (IBRs), and many microgrids have modes or conditions under which they are entirely energized by IBRs. Also, most microgrids today are deployed on radial distribution circuits, but it is conceivable that they could also be considered for deployment on secondary network systems.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

Lead-chelating hole-transport layers for efficient and stable perovskite minimodules

The defective bottom interfaces of perovskites and hole-transport layers (HTLs) limit the performance of p-i-n structure perovskite solar cells. We report that the addition of lead chelation molecules into HTLs can strongly interact with lead(II) ion (Pb 2+ ), resulting in a reduced amorphous region in perovskites near HTLs and a passivated perovskite bottom surface. Here, the minimodule with an aperture area of 26.9 square centimeters has a power conversion efficiency (PCE) of 21.8% (stabilized at 21.1%) that is certified by the National Renewable Energy Laboratory (NREL), which corresponds to a minimal small-cell efficiency of 24.6% (stabilized 24.1%) throughout the module area. Small-area cells and large-area minimodules with lead chelation molecules in HTLs had a light soaking stability of 3010 and 2130 hours, respectively, at an efficiency loss of 10% from the initial value under 1-sun illumination and open-circuit voltage conditions.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Scalable Open-Air Deposition of Compact ETL TiOx on Perovskite for Fullerene-Free Solar Cells

We report on a scalable, low-temperature TiOx electron transport layer (ETL) produced directly on top of perovskite in an inverted architecture device by an open-air chemical vapor deposition (OA-CVD) process. The OA-CVD pyrolysis of a titanium ethoxide precursor forms a fully inorganic, conformal, and compact TiOx film. The resultant film is mechanically robust and exhibits a fracture toughness 30-fold higher than commonly used fullerene-based ETL films. The TiOx is an effective barrier layer against environmental degradation—unencapsulated devices with the TiOx ETL retain 60% of their initial efficiency after 1000 hours in ambient aging conditions—compared to devices with a fullerene ETL which were inoperable after 144 hours. Inverted architecture devices with an optimized TiOx ETL thickness of 70nm exhibited high open-circuit voltages of 1.08V. We comment on the photocatalytic properties of TiOx and the influence of an amorphous film on maximum power point stability.

Chen, Justin↗
DOE OSTI2022

Processing, structure, and thermal properties of ZrW 2 O 8 , HfW 2 O 8 , HfMgW 3 O 12 , Al(HfMg) 0.5 W 3 O 12 , and Al 0.5 Sc 1.5 W 3 O 12 negative and zero thermal expansion coefficient ceramics

Negative and zero coefficient of thermal expansion (CTE) materials are of interest for developing polymer composites in electronic circuits that match the expansion of Si and in zero CTE supports for optical components, e.g., mirrors. In this work, the processing challenges and stability of ZrW 2 O 8 , HfW 2 O 8 , HfMgW 3 O 12 , Al(HfMg) 0.5 W 3 O 12 , and Al 0.5 Sc 1.5 W 3 O 12 negative and zero thermal expansion coefficient ceramics are discussed. Al 0.5 Sc 1.5 W 3 O 12 is demonstrated to be a relatively simple oxide to fabricate in large quantity and is shown to exhibit single phase up to 1300 °C in air and inert N 2 environments. The negative and zero CTE behavior was confirmed with dilatometry. Thermal conductivity and heat capacity were reported for the first time for HfMgW 3 O 12 and Al 0.5 Sc 1.5 W 3 O 12 and thermal conductivity was found to be very low (~0.5 W/mK). Grüneisen parameter is also estimated. Methods for integration of Al 0.5 Sc 1.5 W 3 O 12 with other materials was examined and embedding 50 vol% of the ceramic powder in flexible epoxy was demonstrated with a commercial vendor.

36 MATERIALS SCIENCE↗
NASA NTRS1970

Technique for lowering the noise figure in RF amplifiers

Low-level RF amplifiers are operated at noise figures at or near the theoretical minimum, while maintaining high-gain stability. Formulas for the minimum amplifier noise figure value are derived from the analytical noise-figure expression involving the parameters of the equivalent circuit representing the actual system.

Bellomo, A. F.↗
NASA NTRS1975

S192 multispectral scanner channel 13 electromechanical noise investigation ECP-166

A review is presented of all data on the multispectral scanner having to do with low frequency noise. The noise is component-induced, either mechanical or electrical or a combination of both. To assist in understanding the source of the noise, several dynamic analyses both structural and electrical were made and are reported. A review is presented of structural resonance test data obtained with the use of an accelerometer and strain gage sensors. Results of an analysis of the natural frequencies of the Dewar leads is included along with an analysis of the S192 cooler and its supporting structure. Other topics discussed include electronic stability of the forward signal, automatic gain control, and the offset control feedback loops as well as the preamplifier which utilized on integrator feedback circuit.

Koumjian, H.↗
NASA NTRS1984

SCM Handbooks for dc-to-dc Converters

Two documents aid in design of control modules for dc-to-dc converters. Features of SCM include: Adaptive stability, power component stress limiting, implementation of various control laws, unified design approach. Analysis and quidelines contained in handbooks enable engineer to design SCM circuit and confidently predict resulting overall performance.

Lee, F.↗
NASA NTRS1992

Intense laser beams; Proceedings of the Meeting, Los Angeles, CA, Jan. 23, 24, 1992

Various papers on intense laser beams are presented. Individual topics addressed include: novel methods of copper vapor laser excitation, UCLA IR FEL, lasing characteristics of a large-bore copper vapor laser (CVL), copper density measurement of a large-bore CVL, high-power XeCl excimer laser, solid state direct-drive circuit for pumping gas lasers, united energy model for FELs, intensity and frequency instabilities in double-mode CO2 lasers, comparison of output power stabilities of CO and CO2 lasers, increasing efficiency of sealed-off CO lasers, thermal effects in singlet delta oxygen generation, optical extraction from the chemical oxygen-iodine laser medium, generation and laser diagnostic analysis of bismuth fluoride. Also discussed are: high-Q resonator design for an HF overtone chemical lasers, improved coatings for HF overtone lasers, scaled atmospheric blooming experiment, simulation on producing conjugate field using deformable mirrors, paraxial theory of amplitude correction, potential capabilities of adaptive optical systems in the atmosphere, power beaming research at NASA, system evaluations of laser power beaming options, performance projections for laser beam power to space, independent assessment of laser power beaming options, removal of atmospheric CFCs by lasers, efficiency of vaporization cutting by CVL.

Wade, Richard C.↗
NASA NTRS1990

Vertical bloch line memory

Vertical Bloch Line (VBL) memory is a recently conceived, integrated, solid-state, block-access, VLSI memory which offers the potential of 1Gbit/sq cm real storage density, gigabit per second data rates, and sub-millisecond average access times simultaneously at relatively low mass, volume, and power values when compared to alternative technologies. VBL's are micromagnetic structures within magnetic domain walls which can be manipulated using magnetic fields from integrated conductors. The presence or absence of VBL pairs are used to store binary information. At present, efforts are being directed at developing a single-chip memory using 25Mbit/sq cm technology in magnetic garnet material which integrates, at a single operating point, the writing, storage, reading, and amplification functions needed in a memory. This paper describes the current design architecture, functional elements, and supercomputer simulation results which are used to assist the design process. The current design architecture uses three metal layers, two ion implantation steps for modulating the thickness of the magnetic layer, one ion implantation step for assisting propagation in the major line track, one NiFe soft magnetic layer, one CoPt hard magnetic layer, and one reflective Cr layer for facilitating magneto-optic observation of magnetic structure. Data are stored in a series of elongated magnetic domains, called stripes, which serve as storage sites for arrays of VBL pairs. The ends of these stripes are placed near conductors which serve as VBL read/write gates. A major line track is present to provide a source and propagation path for magnetic bubbles. Writing and reading, respectively, are achieved by converting magnetic bubbles to VBL's and vice versa. The output function is effected by stretching a magnetic bubble and detecting it magnetoresistively. Experimental results from the past design cycle created four design goals for the current design cycle. First, the bias field ranges for the stripes and the major line needed to be matched. Second, the magnetic field barrier between the stripe and the read/write gates needed to be reduced. Third, current conductor routing needed to be improved to reduce occurrences of open-circuiting, short-circuiting, and eddy-current shielding. Fourth, a modified Co-alloy was needed with an increased coercivity and controlled magnetization to allow VBL stabilization to occur without affecting stripe stability.

Katti, R.↗
NASA NTRS1995

Integrated Cryogenic Satellite Communications Cross-Link Receiver Experiment

An experiment has been devised which will validate, in space, a miniature, high-performance receiver. The receiver blends three complementary technologies; high temperature superconductivity (HTS), pseudomorphic high electron mobility transistor (PHEMT) monolithic microwave integrated circuits (MMIC), and a miniature pulse tube cryogenic cooler. Specifically, an HTS band pass filter, InP MMIC low noise amplifier, HTS-sapphire resonator stabilized local oscillator (LO), and a miniature pulse tube cooler will be integrated into a complete 20 GHz receiver downconverter. This cooled downconverter will be interfaced with customized signal processing electronics and integrated onto the space shuttle's 'HitchHiker' carrier. A pseudorandom data sequence will be transmitted to the receiver, which is in low Earth orbit (LEO), via the Advanced Communication Technology Satellite (ACTS) on a 20 GHz carrier. The modulation format is QPSK and the data rate is 2.048 Mbps. The bit error rate (BER) will be measured in situ. The receiver is also equipped with a radiometer mode so that experiment success is not totally contingent upon the BER measurement. In this mode, the receiver uses the Earth and deep space as a hot and cold calibration source, respectively. The experiment closely simulates an actual cross-link scenario. Since the receiver performance depends on channel conditions, its true characteristics would be masked in a terrestrial measurement by atmospheric absorption and background radiation. Furthermore, the receiver's performance depends on its physical temperature, which is a sensitive function of platform environment, thermal design, and cryocooler performance. This empirical data is important for building confidence in the technology.

Romanofsky, R. R.↗
NASA NTRS2000

Research Activities at Plasma Research Laboratory at NASA Ames Research Center

In order to meet NASA's requirements for the rapid development and validation of future generation electronic devices as well as associated materials and processes, enabling technologies are being developed at NASA-Ames Research Center using a multi-discipline approach. The first step is to understand the basic physics of the chemical reactions in the area of plasma reactors and processes. Low pressure glow discharges are indispensable in the fabrication of microelectronic circuits. These plasmas are used to deposit materials and also etch fine features in device fabrication. However, many plasma-based processes suffer from stability and reliability problems leading to a compromise in performance and a potentially increased cost for the semiconductor manufacturing industry. Although a great deal of laboratory-scale research has been performed on many of these processing plasmas, little is known about the gas-phase and surface chemical reactions that are critical in many etch and deposition processes, and how these reactions are influenced by the variation in operating conditions. Such a lack of understanding has hindered the development of process models that can aid in the scaling and improvement of plasma etch and deposition systems. Our present research involves the study of such plasmas. An inductively-coupled plasma (ICP) source in place of the standard upper electrode assembly of the Gaseous Electronics Conference (GEC) radio-frequency (RF) Reference Cell is used to investigate the discharge characteristics. This ICP source generates plasmas with higher electron densities and lower operating pressures than obtainable with the original parallel-plate version of the GEC Cell. This expanded operating regime is more relevant to new generations of industrial plasma systems being used by the microelectronics industry. The research goal is to develop an understanding of the physical phenomena involved in plasma processing and to measure much needed fundamental parameters, such as gas phase and surface reaction rates, species concentration, temperature, ion energy distribution, and electron number density.

Sharma, S. P.↗
NASA NTRS1991

DC isolation and protection system and circuit

A precision analog electronic circuit that is capable of sending accurate signals to an external device that has hostile electric characteristics, including the presence of very large common mode voltages. The circuit is also capable of surviving applications of normal mode overvoltages of up to 120 VAC/VDC for unlimited periods of time without damage or degradation. First, the circuit isolates the DC signal output from the computer. Means are then provided for amplifying the isolated DC signal. Further means are provided for stabilizing and protecting the isolating and amplifying means, and the isolated and amplified DC signal which is output to the external device, against overvoltages and overcurrents.

Wagner, Charles A.↗
NASA NTRS2011

Early Oscillation Detection Technique for Hybrid DC/DC Converters

Oscillation or instability is a situation that must be avoided for reliable hybrid DC/DC converters. A real-time electronics measurement technique was developed to detect catastrophic oscillations at early stages for hybrid DC/DC converters. It is capable of identifying low-level oscillation and determining the degree of the oscillation at a unique frequency for every individual model of the converters without disturbing their normal operations. This technique is specially developed for space-used hybrid DC/DC converters, but it is also suitable for most of commercial and military switching-mode power supplies. This is a weak-electronic-signal detection technique to detect hybrid DC/DC converter oscillation presented as a specific noise signal at power input pins. It is based on principles of feedback control loop oscillation and RF signal modulations, and is realized by using signal power spectral analysis. On the power spectrum, a channel power amplitude at characteristic frequency (CPcf) and a channel power amplitude at switching frequency (CPsw) are chosen as oscillation level indicators. If the converter is stable, the CPcf is a very small pulse and the CPsw is a larger, clear, single pulse. At early stage of oscillation, the CPcf increases to a certain level and the CPsw shows a small pair of sideband pulses around it. If the converter oscillates, the CPcf reaches to a higher level and the CPsw shows more high-level sideband pulses. A comprehensive stability index (CSI) is adopted as a quantitative measure to accurately assign a degree of stability to a specific DC/DC converter. The CSI is a ratio of normal and abnormal power spectral density, and can be calculated using specified and measured CPcf and CPsw data. The novel and unique feature of this technique is the use of power channel amplitudes at characteristic frequency and switching frequency to evaluate stability and identify oscillations at an early stage without interfering with a DC/DC converter s normal operation. This technique eliminates the probing problem of a gain/phase margin method by connecting the power input to a spectral analyzer. Therefore, it is able to evaluate stability for all kinds of hybrid DC/DC converters with or without remote sense pins, and is suitable for real-time and in-circuit testing. This frequency-domain technique is more sensitive to detect oscillation at early stage than the time-domain method using an oscilloscope.

Wang, Bright L.↗
DOE OSTI2020

The Effect of Artificial SEIs on Lithium Metal Anode Morphology and Conductivity

Lithium metal has often been termed the “holy grail” of battery technology, due to its high capacity (2,061 mAh/cm3) and low electrochemical potential (-3.04 V vs. SHE). However, lithium’s beneficially low potential also causes it to be highly reactive in the presence of organic solvents, making it difficult to harness the high energy capabilities for rechargeable batteries. Common failure of lithium metal batteries occurs by rapid dendrite growth leading to a hazardous short-circuit. Various methods have been brought forth to better understand the fundamental mechanisms of lithium metal batteries, as well as modifications made to better stabilize lithium metal. A common route of modification is done through interface engineering, with attempts to artificially provide a stable, homogeneous solid-electrolyte interface (SEI). The stability of the SEI has direct effects on the heterogeneity of the electrode surface, which initiates a waterfall effect of for progressive reactions such as dendrite growth, dead lithium accumulation, and electrolyte consumption. This work aims to produce a mixed LiI-LiF artificial SEI to improve ionic conductivity while retaining a high elastic modulus.

25 ENERGY STORAGE↗
DOE OSTI2023

SPUTTERED THIN FILMS FOR VERY HIGH POWER, EFFICIENT, AND LOW-COST COMMERCIAL SOFCS

The aim of this project was to leverage the low area specific resistance (ASR) of Redox’s GDC electrolyte-based cell architecture and increase solid oxide fuel cell (SOFC) efficiency (i.e., open circuit voltage, or OCV) without significantly increasing cell resistance. The key to achieving the increased SOFC efficiency is the introduction of a thin sputtered yttria stabilized zirconia (YSZ) electron-blocking layer and a thin sputtered gadolinia doped ceria (GDC) barrier layer on top of the half-cell substrate (i.e., anode and GDC electrolyte). A key initial effort of the project was to improve the quality of the half-cell substrate surface so that any remaining defects were significantly smaller than the desired film thickness. During lab-scale trials, we had to overcome challenges with film cracking during post-sputtering treatments (e.g., thermal anneals) as well as damage to the sputtering targets. After the initial lab-scale trials, the focus shifted toward the use of commercial scale sputtering equipment with a sputtering equipment manufacturer in the microelectronics industry. Using the commercial sputtering equipment, we deposited films with different variations of power, PO2, sputtering time, platen speed, etc. We then determined the combinations of sputtering conditions and post-sputtering treatments that yielded high-quality films without cracks or other significant defects. While thin films were deposited on cells as large as 10 cm by 10 cm, the processing was optimized using 4 cm by 4 cm cells. Cell performance was evaluated in stainless-steel test fixtures between 500 °C and 700 °C with hydrogen fuel fed to the anode and air fed to the cathode. Extensive studies allowed us to determine that modified cathode and cathode contact firing processes were required to achieve theoretical OCV. Moreover, use of the new firing processes resulted in the need for a modified cathode contact to achieve a low ASR. In summary, the project demonstrated the performance of high OCV (1.13 V at 650 °C) from sputtered layers and a low ASR (~0.25 Ohms-cm2 at 650 °C) resulting from a modification of cathode/contact processing and the introduction of alternative contact layers that are sufficient to yield a Gen-1 cell with a maximum power density of approximately 1.2 W/cm2. At an operating voltage of 0.74 V, this would yield a cell power density of ~1.1 W/cm2. While not utilized in this project, a Redox Gen-2 cell has a catalyst-infiltrated porous anode that reduces the ASR by more than 50% from that of the Gen-1 cells used in this project. Therefore, if the sputtered YSZ electron-blocking layer and GDC barrier layer are added to a Gen-2 half cell with a similar increase in OCV to the theoretical value of ~1.13 V at 650 °C, and if the same improvement in ASR (from that demonstrated in this project) is achieved when using the Gen-2 half-cell architecture as a sputtered cell substrate, then the power density at 0.74 Vop could be as high as ~2.6 W/cm2. The impact of such power density gains, while still maintaining high cell efficiency, and thus high system efficiency, is a dramatic decrease in system cost because the stack represents ~30-40% of the SOFC system cost.

01 COAL, LIGNITE, AND PEAT↗