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At least 307 records · Page 17

Switching charge states in quasi-2D molecular conductors

Abstract 2D molecular entities build next-generation electronic devices, where abundant elements of organic molecules are attractive due to the modern synthetic and stimuli control through chemical, conformational, and electronic modifications in electronics. Despite its promising potential, the insufficient control over charge states and electronic stabilities must be overcome in molecular electronic devices. Here, we show the reversible switching of modulated charge states in an exfoliatable 2D-layered molecular conductor based on bis(ethylenedithio)tetrathiafulvalene molecular dimers. The multiple stimuli application of cooling rate, current, voltage, and laser irradiation in a concurrent manner facilitates the controllable manipulation of charge crystal, glass, liquid, and metal phases. The four orders of magnitude switching of electric resistance are triggered by stimuli-responsive charge distribution among molecular dimers. The tunable charge transport in 2D molecular conductors reveals the kinetic process of charge configurations under stimuli, promising to add electric functions in molecular circuitry.

Huang, Yulong (ORCID:0000000296160134)↗

Dopant Optimization of Donors in Semiconductor Opening Switches to Eliminate Prepulse

Semiconductor opening switches are solid-state devices capable of delivering nanosecond, hundreds of kilovolts pulses by interrupting kiloamps of current. The interruption of the current occurs in a moderately doped p-region when a high electric field region (HFR) is formed. The HFR occurs because the reverse pumping current cannot be supported by the saturation velocity and majority carrier concentration of the doping level. However, the donor profile also significantly affects the pulse performance. A secondary prepulse occurs if a secondary HFR is formed at the interface of the background n-doping and N+ doping (X n ) . By moving the location of X n deeper into the diode, the effect of the prepulse is reduced. This article investigates the effect of the donor doping profile on the performance metrics of semiconductor opening switches through technology computer-aided design (TCAD) simulations and experimental results. Through a SILVACO TCAD optimization, we designed a P + /p/n - base/n/N + where the intersection of the moderate p-region and intrinsic n-base region (X p ) is at 160 μm and X n is at 220 μm. This profile is fabricated via silicon epitaxy. Experimentally, it is shown that a deep X n (220 μm) compared with a shallow X n (300 μm) reduces the rise time by >5× . In addition, the magnitude of current density during interruption affects the prepulse foot and pulse shape. At lower current densities without the graded donor profile, high peak voltages are not achieved. Comparing the experimental results to the TCAD simulations shows that the model is predictive under high-current densities in the semiconductor opening switch (SOS) regime.

nanosecond pulse power↗

A Review on Protection Challenges on Transmission Lines Connected to Inverter Based Resources

The increased penetration of inverter-based resources (IBRs) connected to transmission grids is challenging how traditional electric power systems operate. Such systems were originally designed based on the dominant presence of synchronous generators. Some main challenges include the increased concerns about system stability due to the reduced system inertia caused by IBRs and the reduced protection reliability caused by the non-deterministic fault current response of IBRs. The protection relays’ algorithms have been designed and validated based on well-known fault current characteristics of synchronous generations, while the short-circuit responses of IBRs heavily depend on their vendor-specific control schemes, which are mainly set to protect inverter semiconductor switches and DC components. The magnitude of short current that IBRs contribute is typically between 1.1–1.5 times the rated current that may behave unstably and incoherently with the voltages. The control scheme of the IBRs also controls the active (P) and reactive (Q) support during system voltage sag and swell conditions. These characteristics challenge not only protective relay schemes but also existing short-circuit software tools to correctly model IBRs for fault studies and protection coordination analyses. Utilities, university researchers, research institutes, and relay manufacturers have performed studies to investigate different aspects of high IBR penetration. Almost all studies support 1) creating international and national standards to regulate the IBRs, 2) revising engineering tools to address shortcomings, and 3) adjusting the protective relay settings to resolve protection problems. This paper summarizes the studies and research conducted in recent years to quantify the impact of IBR penetration on transmission line protection and to identify potential solutions to improve the dependability and reliability of grid protection systems.

14 SOLAR ENERGY↗

A review on protection challenges of Transmission Lines connected to Inverter Based Resources

The increased penetration of inverter-based resources (IBRs) connected to transmission grids is challenging how traditional electric power systems operate. Such systems were originally designed based on the dominant presence of synchronous generators. Some main challenges include the increased concerns about system stability due to the reduced system inertia caused by IBRs and the reduced protection reliability caused by the non-deterministic fault current response of IBRs. The protection relays’ algorithms have been designed and validated based on well-known fault current characteristics of synchronous generations, while the short-circuit responses of IBRs heavily depend on their vendor-specific control schemes, which are mainly set to protect inverter semiconductor switches and DC components. The magnitude of short current that IBRs contribute is typically between 1.1–1.5 times the rated current that may behave unstably and incoherently with the voltages. The control scheme of the IBRs also controls the active (P) and reactive (Q) support during system voltage sag and swell conditions. These characteristics challenge not only protective relay schemes but also existing short-circuit software tools to correctly model IBRs for fault studies and protection coordination analyses.

14 SOLAR ENERGY↗

Voltage-spike analysis for a free-running parallel inverter

Unwanted and sometimes damaging high-amplitude voltage spikes occur during each half cycle in many transistor saturable-core inverters at the moment when the core saturates and the transistors switch. The analysis shows that spikes are an intrinsic characteristic of certain types of inverters even with negligible leakage inductance and purely resistive load. The small but unavoidable after-saturation inductance of the saturable-core transformer plays an essential role in creating these undesired thigh-voltage spikes. State-plane analysis provides insight into the complex interaction between core and transistors, and shows the circuit parameters upon which the magnitude of these spikes depends.

Lee, F. C. Y.↗

Rotating Capacitor Measures Steady Electric Fields

Portable sensor measures electric fields created by dc powerlines or other dc-high-voltage sources. Measures fields from 70 to 50,000 V/m with linearity of 2 percent. Sensor used at any height above ground. Measures both magnitude and direction of field and provides signals representing these measurements to remote readout device. Sensor functions with minimal disturbance of field it is measuring.

Johnston, A. R.↗

Current collection by high voltage anodes in near ionospheric conditions

The authors experimentally identified three distinct regimes with large differences in current collection in the presence of neutrals and weak magnetic fields. In magnetic field/anode voltage space the three regions are separated by very sharp transition boundaries. The authors performed a series of laboratory experiments to study the dependence of the region boundaries on several parameters, such as the ambient neutral density, plasma density, magnetic field strength, applied anode voltage, voltage pulsewidth, chamber material, chamber size and anode radius. The three observed regimes are: classical magnetic field limited collection; stable medium current toroidal discharge; and large scale, high current space glow discharge. There is as much as several orders of magnitude of difference in the amount of collected current upon any boundary crossing, particularly if one enters the space glow regime. They measured some of the properties of the plasma generated by the breakdown that is present in regimes II and III in the vicinity of the anode including the sheath modified electrostatic potential, I-V characteristics at high voltage as well as the local plasma density.

Antoniades, John A.↗

Taguchi methods in electronics: A case study

Total Quality Management (TQM) is becoming more important as a way to improve productivity. One of the technical aspects of TQM is a system called the Taguchi method. This is an optimization method that, with a few precautions, can reduce test effort by an order of magnitude over conventional techniques. The Taguchi method is specifically designed to minimize a product's sensitivity to uncontrollable system disturbances such as aging, temperature, voltage variations, etc., by simultaneously varying both design and disturbance parameters. The analysis produces an optimum set of design parameters. A 3-day class on the Taguchi method was held at the Marshall Space Flight Center (MSFC) in May 1991. A project was needed as a follow-up after the class was over, and the motor controller was selected at that time. Exactly how to proceed was the subject of discussion for some months. It was not clear exactly what to measure, and design kept getting mixed with optimization. There was even some discussion about why the Taguchi method should be used at all.

Kissel, R.↗

Recent Development of Sb-based Phototransistors in the 0.9- to 2.2-microns Wavelength Range for Applications to Laser Remote Sensing

We have investigated commercially available photodiodes and also recent developed Sb-based phototransistors in order to compare their performances for applications to laser remote sensing. A custom-designed phototransistor in the 0.9- to 2.2-microns wavelength range has been developed at AstroPower and characterized at NASA Langley's Detector Characterization Laboratory. The phototransistor's performance greatly exceeds the previously reported results at this wavelength range in the literature. The detector testing included spectral response, dark current and noise measurements. Spectral response measurements were carried out to determine the responsivity at 2-microns wavelength at different bias voltages with fixed temperature; and different temperatures with fixed bias voltage. Current versus voltage characteristics were also recorded at different temperatures. Results show high responsivity of 2650 A/W corresponding to an internal gain of three orders of magnitude, and high detectivity (D*) of 3.9x10(exp 11) cm.Hz(exp 1/2)/W that is equivalent to a noise-equivalent-power of 4.6x10(exp -14) W/Hz(exp 1/2) (-4.0 V @ -20 C) with a light collecting area diameter of 200-microns. It appears that this recently developed 2-micron phototransistor's performances such as responsivity, detectivity, and gain are improved significantly as compared to the previously published APD and SAM APD using similar materials. These detectors are considered as phototransistors based-on their structures and performance characteristics and may have great potential for high sensitivity differential absorption lidar (DIAL) measurements of carbon dioxide and water vapor at 2.05-microns and 1.9-microns, respectively.

Abedin, M. Nurul↗

A Review on Protection Challenges of Transmission Lines Connected to Inverter-Based Resources

The increased penetration of inverter-based resources (IBRs) connected to transmission grids is challenging how traditional electric power systems operate. Such systems were originally designed based on the dominant presence of synchronous generators. Some main challenges include the increased concerns about system stability due to the reduced system inertia caused by IBRs and the reduced protection reliability caused by the non-deterministic fault current response of IBRs. The protection relays’ algorithms have been designed and validated based on well-known fault current characteristics of synchronous generations, while the short-circuit responses of IBRs heavily depend on their vendor-specific control schemes, which are mainly set to protect inverter semiconductor switches and DC components. The magnitude of short current that IBRs contribute is typically between 1.1–1.5 times the rated current that may behave unstably and incoherently with the voltages. The control scheme of the IBRs also controls the active (P) and reactive (Q) support during system voltage sag and swell conditions. These characteristics challenge not only protective relay schemes but also existing short-circuit software tools to correctly model IBRs for fault studies and protection coordination analyses

14 SOLAR ENERGY↗

Deconstructing the High Voltage Degradation Mechanisms in Na 2/3 Ni 1/3 Mn 2/3 O 2 with Single Crystals and Advanced Electrolyte

Abstract Sodium layered oxide cathodes can uniquely benefit from the existing lithium‐ion battery industry as sodium‐ion batteries gain traction as a potential low‐cost, drop‐in replacement. However, achieving relevant energy density with a suitable cycle life remains a challenge for sodium layered oxides. At high operating potentials, several competing degradation mechanisms prevent P2‐type Na 2/3 Ni 1/3 Mn 2/3 O 2 (≈550 Wh kg −1 ) from achieving meaningful cycle life—with bulk structural instability and surface reactivity being the primary retractors. Herein, the issue of particle cracking is addressed through detailed synthesis methods of “single‐crystal” materials. By comparison to a polycrystalline baseline, the single‐crystal materials quantify the capacity loss due to isolation of active material caused by intergranular particle cracking. The single crystal materials are then employed in cells with an advanced, “localized saturated electrolyte” (LSE) to demonstrate the magnitude of capacity loss due to electrolyte decomposition at the cathode surface. Mitigation of the surface reactivity through the LSE electrolyte effectively demonstrates the elevated importance of surface reactivity at high voltages despite the onset of egregious particle cracking. This work aims to guide future research into understanding molten‐salt assisted syntheses and advance the debate on surface versus bulk degradation.

Darga, Joe↗

Beam efflux measurements

Measurements have been made of the high energy thrust ions, (Group I), high angle/high energy ions (Group II), and high angle/low energy ions (Group IV) of a mercury electron bombardment thruster in the angular divergence range from 0 deg to greater than 90 deg. The measurements have been made as a function of thrust ion current, propellant utilization efficiency, bombardment discharge voltage, screen and accelerator grid potential (accel-decel ratio) and neutralizer keeper potential. The shape of the Group IV (charge exchange) ion plume has remained essentially fixed within the range of variation of the engine operation parameters. The magnitude of the charge exchange ion flux scales with thrust ion current, for good propellant utilization conditions. For fixed thrust ion current, charge exchange ion flux increases for diminishing propellant utilization efficiency. Facility effects influence experimental accuracies within the range of propellant utilization efficiency used in the experiments. The flux of high angle/high energy Group II ions is significantly diminished by the use of minimum decel voltages on the accelerator grid. A computer model of charge exchange ion production and motion has been developed. The program allows computation of charge exchange ion volume production rate, total production rate, and charge exchange ion trajectories for "genuine" and "facilities effects" particles. In the computed flux deposition patterns, the Group I and Group IV ion plumes exhibit a counter motion.

Komatsu, G. K.↗

Physics-informed machine learning of redox flow battery based on a two-dimensional unit cell model

In this paper, we present a physics-informed neural network (PINN) approach for predicting the performance of an all-vanadium redox flow battery, with its physics constraints enforced by a two-dimensional (2D) mathematical model. The 2D model, which includes 6 governing equations and 24 boundary conditions, provides a detailed representation of the electrochemical reactions, mass transport and hydrodynamics occurring inside the redox flow battery. To solve the 2D model with the PINN approach, a composite neural network is employed to approximate species concentration and potentials; the input and output are normalized according to prior knowledge of the battery system; the governing equations and boundary conditions are first scaled to an order of magnitude around 1, and then further balanced with a self-weighting method. Our numerical results show that the PINN is able to predict cell voltage correctly, but the prediction of potentials shows a constant-like shift. To fix the shift, the PINN is enhanced by further constrains derived from the current collector boundary. Finally, we show that the enhanced PINN can be even further improved if a small number of labeled data is available.

25 ENERGY STORAGE↗

Single-Crystallization of O3-Type Layered Oxide Cathode for Na-Ion Battery

The development of high-energy-density Na-ion batteries places significant demands on single-crystal layered oxide cathodes, especially for further high-voltage, solid-state battery scenarios. In the O3-type structure, due to the original sluggish Na ion diffusion kinetics (approximately 1 order of magnitude lower than that of Li-ion), and further hindrance against diffusion kinetics caused by single-crystal architecture, these inherent defects lead to the decline in the electrochemical performance. Herein, we demonstrated that the single crystallization of O3-type NaNi 1/3 Fe 1/3 Mn 1/3 O 2 cathode (d 50 = 5.04 μm) aggravates surface-to-bulk phase inhomogeneity distribution, which is attributed to the uneven Na ions extraction. Moreover, the Na-depletion of the surface/shell region not only aggravates Na ion diffusion resistance but also leads to a higher valence state of transition-metal elements (e.g., Ni/Fe) near the surface of the single-crystal particle, which further compromises the cathode-electrolyte interface stability. Furthermore, not limited to revealing the challenges, tuning the particle size and moderating quasi-single-crystal strategies have been proven to effectively mitigate the negative uneven distributions of Na ions, phases, and valence/oxidative states, resulting in efficient modification for single crystallization of Na-layered oxide cathodes.

36 MATERIALS SCIENCE↗

Operando Temperature Measurements of Photovoltaic Laser Power Converter Devices Under Continuous High-Intensity Illumination

Photovoltaic devices that operate under extremely high irradiances, such as laser power converters (LPCs), may also operate at elevated temperatures, even under active cooling, as the result of large temperature gradients. We demonstrate the operation of GaAs LPC devices under orders of magnitude of irradiances up to 150 W/cm 2 in a monochromatic laser simulator with an active cooling stage. The steady-state open-circuit voltage (V OC ) as a function of irradiance is known to droop at high irradiance as the result of junction heating, but the junction temperature can be difficult to measure by conventional methods. Fast, transient V OC measurements under these extreme operating conditions are used here to determine the junction temperature. Empirical V OC temperature coefficients of the devices at each irradiance of interest are determined and used as an integral part of this technique. We show that the thermal design of different LPC devices strongly affects the operating temperature of the junctions. Knowledge of the operating temperature can be a strong tool for understanding the nature of loss mechanisms and improving the design for the operation of photovoltaic LPCs at high irradiances. Furthermore, this technique can be used for laboratory devices during initial design as well as to characterize mass-produced and packaged devices for quality control.

14 SOLAR ENERGY↗

Multiple-amplifier sensing charged-coupled device: model and improvement of the node removal efficiency

The multiple-amplifier sensing charge-coupled device (MAS-CCD) has emerged as a promising technology for astronomical observation, quantum imaging, and low-energy particle detection due to its ability to reduce the readout time for the same readout noise level compared with its predecessor, the skipper-CCD, by reading out the same charge packet through multiple inline amplifiers. Previous works identified a new parameter in this sensor, called node removal inefficiency (NRI), related to inefficiencies in charge transfer and residual charge removal from the sense node of each amplifier after readout. These inefficiencies can lead to distortions in the measured signals similar to those produced by the charge transfer inefficiencies in standard CCDs. We introduce more details in the mathematical model of the NRI mechanism and provide techniques to quantify its magnitude from the measured data. It also proposes a new operation strategy that significantly reduces its effect with minimal alterations of the timing sequences or voltage settings for the other signals of the sensor. The proposed technique is demonstrated experimentally on a 16-amplifier MAS-CCD. At the same time, the experimental data demonstrate that this approach minimizes the NRI effect to levels comparable with other sources of distortion such as the charge transfer inefficiency in scientific devices.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Performance, Facility Pressure Effects, and Stability Characterization Tests of NASA's Hall Effect Rocket with Magnetic Shielding Thruster

NASA's Hall Effect Rocket with Magnetic Shielding (HERMeS) 12.5 kW Technology Demonstration Unit-1 (TDU-1) has been the subject of extensive technology maturation in preparation for flight system development. Part of the technology maturation effort included experimental evaluation of the TDU-1 thruster with conducting and dielectric front pole cover materials in two different electrical configurations. A graphite front magnetic pole cover thruster configuration with the thruster body electrically tied to cathode, and an alumina front pole cover thruster configuration with the thruster body floating were evaluated. Both configurations were also evaluated at different facility background pressure conditions to evaluate background pressure effects on thruster operation. Performance characterization tests found that higher thruster performance was attained with the graphite front pole cover configuration with the thruster electrically tied to cathode. A total thrust efficiency of 68% and a total specific impulse of 2,820 s was demonstrated at a discharge voltage of 600 V and a discharge power of 12.5 kW. Thruster stability regimes were characterized with respect to the thruster discharge current oscillations and with maps of the discharge current-voltage-magnetic field (IVB). Analysis of TDU-1 discharge current waveforms found that lower normalized discharge current peak-to-peak and root mean square magnitudes were attained when the thruster was electrically floated with alumina front pole covers. Background pressure effects characterization tests indicated that the thruster performance and stability were mostly invariant to changes in the facility background pressure for vacuum chamber pressure below 1×10-5 Torr-Xe (for thruster flow rates of 20.5 mg/s). Power spectral density analysis of the discharge current waveforms showed that increasing the vacuum chamber background pressure resulted in a higher discharge current dominant breathing mode frequency. Finally, IVB maps of the TDU-1 thruster indicated that the discharge current became more oscillatory with higher discharge current peak-to-peak and RMS values with increased facility background pressure at lower thruster mass flow rates; thruster operation at higher flow rates resulted in less change to the thruster's IVB characteristics with elevated background pressure.

Electric Propulsion↗

Performance, Facility Pressure Effects, and Stability Characterization Tests of NASA's Hall Effect Rocket with Magnetic Shielding Thruster

NASAs Hall Effect Rocket with Magnetic Shielding (HERMeS) 12.5 kW Technology Demonstration Unit-1 (TDU-1) Hall thruster has been the subject of extensive technology maturation in preparation for flight system development. Part of the technology maturation effort included experimental evaluation of the TDU-1 thruster with conducting and dielectric front pole cover materials in two different electrical configurations. A graphite front pole cover thruster configuration with the thruster body electrically tied to cathode and an alumina front pole cover thruster configuration with the thruster body floating were evaluated. Both configurations were also evaluated at different facility background pressure conditions to evaluate background pressure effects on thruster operation. Performance characterization tests found that higher thruster performance was attained with the graphite front pole cover configuration with the thruster electrically tied to cathode. A total thrust efficiency of 68 and a total specific impulse of 2,820 s was demonstrated at a discharge voltage of 600 V and a discharge power of 12.5 kW. Thruster stability regimes were characterized with respect to the thruster discharge current oscillations and with maps of the current-voltage-magnetic field (IVB). Analysis of TDU-1 discharge current waveforms found that lower normalized discharge current peak-to-peak and root mean square magnitudes were attained when the thruster was electrically floated with alumina front pole covers. Background pressure effects characterization tests indicated that the thruster performance and stability was mostly invariant to changes in the facility background pressure for vacuum chamber pressure below 110-5 Torr-Xe (for thruster flow rate above 8 mgs). Power spectral density analysis of the discharge current waveform showed that increasing the vacuum chamber background pressure resulted in a higher discharge current dominant frequency. Finally the IVB maps of the TDU-1 thruster taken at elevated magnetic fields indicated that the discharge current became more oscillatory with increased facility background pressure at lower thruster mass flow rates, where thruster operation at higher flow rates resulted in less change to the thrusters IVB characteristics.

Hall Thrusters↗