Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “TRAPPING”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
DOE OSTI2014

Fourier spectrum based extraction of an equivalent trap state density in indium gallium zinc oxide transistors

Segregating the dynamics of gate bias induced threshold voltage shift, and in particular, charge trapping in thin film transistors (TFTs) based on time constants provides insight into the different mechanisms underlying TFTs instability. In this Letter we develop a representation of the time constants and model the magnitude of charge trapped in the form of an equivalent density of created trap states. This representation is extracted from the Fourier spectrum of the dynamics of charge trapping. Using amorphous In-Ga-Zn-O TFTs as an example, the charge trapping was modeled within an energy range of ΔE{sub t}≈ 0.3 eV and with a density of state distribution as D{sub t}(E{sub t−j})=D{sub t0}exp(−ΔE{sub t}/kT)with D{sub t0} = 5.02 × 10{sup 11} cm{sup −2} eV{sup −1}. Such a model is useful for developing simulation tools for circuit design.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Dislocation-related trap levels in nitride-based light emitting diodes

Deep level transient spectroscopy was performed on InGaN/GaN multiple quantum well light emitting diodes (LEDs) in order to determine the effect of the dislocation density on the deep intragap electronic levels. The LEDs were grown by metalorganic vapor phase epitaxy on GaN templates with a high dislocation density of 8 × 10{sup 9} cm{sup −2} and a low dislocation density of 3 × 10{sup 8} cm{sup −2}. Three trapping levels for electrons were revealed, named A, A1, and B, with energies E{sub A} ≈ 0.04 eV, E{sub A1} ≈ 0.13 eV, and E{sub B} ≈ 0.54 eV, respectively. The trapping level A has a much higher concentration in the LEDs grown on the template with a high density of dislocations. The logarithmic dependence of the peak amplitude on the bias pulse width for traps A and A1 identifies the defects responsible for these traps as associated with linearly arranged defects. We conclude that traps A and A1 are dislocation-related intragap energy levels.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)

The influence of electric field (EF) on the dynamic ON-resistance (dyn-R{sub DS[ON]}) and threshold-voltage shift (ΔV{sub th}) of AlGaN/GaN high electron mobility transistors on Si has been investigated using pulsed current-voltage (I{sub DS}-V{sub DS}) and drain current (I{sub D}) transients. Different EF was realized with devices of different gate-drain spacing (L{sub gd}) under the same OFF-state stress. Under high-EF (L{sub gd} = 2 μm), the devices exhibited higher dyn-R{sub DS[ON]} degradation but a small ΔV{sub th} (∼120 mV). However, at low-EF (L{sub gd} = 5 μm), smaller dyn-R{sub DS[ON]} degradation but a larger ΔV{sub th} (∼380 mV) was observed. Our analysis shows that under OFF-state stress, the gate electrons are injected and trapped in the AlGaN barrier by tunnelling-assisted Poole-Frenkel conduction mechanism. Under high-EF, trapping spreads towards the gate-drain access region of the AlGaN barrier causing dyn-R{sub DS[ON]} degradation, whereas under low-EF, trapping is mostly confined under the gate causing ΔV{sub th}. A trap with activation energy 0.33 eV was identified in the AlGaN barrier by I{sub D}-transient measurements. The influence of EF on trapping was also verified by Silvaco TCAD simulations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Effects of antimony (Sb) on electron trapping near SiO{sub 2}/4H-SiC interfaces

To investigate the mechanism by which Sb at the SiO{sub 2}/SiC interface improves the channel mobility of 4H-SiC MOSFETs, 1 MHz capacitance measurements and constant capacitance deep level transient spectroscopy (CCDLTS) measurements were performed on Sb-implanted 4H-SiC MOS capacitors. The measurements reveal a significant concentration of Sb donors near the SiO{sub 2}/SiC interface. Two Sb donor related CCDLTS peaks corresponding to shallow energy levels in SiC were observed close to the SiO{sub 2}/SiC interface. Furthermore, CCDLTS measurements show that the same type of near-interface traps found in conventional dry oxide or NO-annealed capacitors are present in the Sb implanted samples. These are O1 traps, suggested to be carbon dimers substituted for O dimers in SiO{sub 2}, and O2 traps, suggested to be interstitial Si in SiO{sub 2}. However, electron trapping is reduced by a factor of ∼2 in Sb-implanted samples compared with samples with no Sb, primarily at energy levels within 0.2 eV of the SiC conduction band edge. This trap passivation effect is relatively small compared with the Sb-induced counter-doping effect on the MOSFET channel surface, which results in improved channel transport.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Formation of contour optical traps using a four-channel liquid crystal focusing device

The capabilities and specific features of the formation and dynamic control of so-called contour optical traps using a fourchannel liquid crystal modulator are studied theoretically and experimentally. Circular, elliptical and C-shaped traps are formed. Trapping and confinement of absorbing micro-objects by the formed traps are demonstrated. (optical traps)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2016

Multiparticle losses in a linear quadrupole Paul trap

A linear quadrupole Paul trap is fabricated for capturing magnesium and aluminium ions. An experimental cycle performed has demonstrated ion capture and holding in a trap with an average ion lifetime of 1.7 s. Modelling of ion dynamics in the trap shows that the main mechanism responsible for losses of hot ions is multiparticle interaction, which results in that a kinetic energy of some ions increases and they leave the trapping zone. This mechanism is completely suppressed if ions are cooled. Another mechanism is the charge exchange; however, it is not substantial at a high average energy of ions produced in the result of an electron impact. Parameters of the trap allow one to perform precision spectroscopic measurements and to control ion quantum states. (laser cooling)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

A COMPACT CONCENTRATION OF LARGE GRAINS IN THE HD 142527 PROTOPLANETARY DUST TRAP

A pathway to the formation of planetesimals, and eventually giant planets, may occur in concentrations of dust grains trapped in pressure maxima. Dramatic crescent-shaped dust concentrations have been seen in recent radio images at submillimeter wavelengths. These disk asymmetries could represent the initial phases of planet formation in the dust trap scenario, provided that grain sizes are spatially segregated. A testable prediction of azimuthal dust trapping is that progressively larger grains should be more sharply confined and should follow a distribution that is markedly different from the gas. However, gas tracers such as {sup 12}CO and the infrared emission from small grains are both very optically thick where the submillimeter continuum originates, so previous observations have been unable to test the trapping predictions or to identify compact concentrations of larger grains required for planet formation by core accretion. Here we report multifrequency observations of HD 142527, from 34 to 700 GHz, that reveal a compact concentration of grains approaching centimeter sizes, with a few Earth masses, embedded in a large-scale crescent of smaller, submillimeter-sized particles. The emission peaks at wavelengths shorter than ∼1 mm are optically thick and trace the temperature structure resulting from shadows cast by the inner regions. Given this temperature structure, we infer that the largest dust grains are concentrated in the 34 GHz clump. We conclude that dust trapping is efficient enough for grains observable at centimeter wavelengths to lead to compact concentrations.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2015

A CONCENTRATION OF CENTIMETER-SIZED GRAINS IN THE OPHIUCHUS IRS 48 DUST TRAP

Azimuthally asymmetric dust distributions observed with the Atacama Large Millimeter/submillimeter Array (ALMA) in transition disks have been interpreted as dust traps. We present Very Large Array Ka band (34 GHz or 0.9 cm) and ALMA Cycle 2 Band 9 (680 GHz or 0.45 mm) observations at a 0.″2 resolution of the Oph IRS 48 disk, which suggest that larger particles could be more azimuthally concentrated than smaller dust grains, assuming an axisymmetric temperature field or optically thin 680 GHz emission. Fitting an intensity model to both data demonstrates that the azimuthal extent of the millimeter emission is 2.3 ± 0.9 times as wide as the centimeter emission, marginally consistent with the particle trapping mechanism under the above assumptions. The 34 GHz continuum image also reveals evidence for ionized gas emission from the star. Both the morphology and the spectral index variations are consistent with an increase of large particles in the center of the trap, but uncertainties remain due to the continuum optical depth at 680 GHz. Particle trapping has been proposed in planet formation models to allow dust particles to grow beyond millimeter sizes in the outer regions of protoplanetary disks. The new observations in the Oph IRS 48 disk provide support for the dust trapping mechanism for centimeter-sized grains, although additional data are required for definitive confirmation.

79 ASTRONOMY AND ASTROPHYSICS↗
DOE OSTI2022

1 / ω electric-field noise in surface ion traps from correlated adsorbate dynamics

Ion traps are promising architectures for implementing quantum computers, but they suffer from excessive “anomalous” ion motional heating that limit their overall coherence and practicality for scalable quantum computing. The exact microscopic origins of anomalous heating remain an open question, but experiments point to adsorbates on trap electrodes as one likely source. Many different models of anomalous heating have been proposed, but these models have yet to pinpoint the atomistic origin of the experimentally observed 1/ω electric-field noise scaling seen in ion traps at frequencies between 0.1–10 MHz. In this work, we show that a model based on previously proposed surface-induced dipole fluctuations on adsorbates, but which also incorporates interparticle interaction dynamics through molecular dynamics simulations of up to multiple monolayers of adsorbates, gives rise to 1/ω frequency scaling at the MHz frequencies typically employed in ion traps. Overall, these results demonstrate that moderate-to-high densities of adsorbates can give rise to a set of activated motions that produce the 1/ω noise observed in ion traps and that collective adsorbate motions produce the observed noise spectra that a noninteracting model does not capture.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector

In this paper we present the trapping of photogenerated charge carriers for 300 s resulted by their direct exchange under illumination between a few silicon nanocrystals (ncs-Si) embedded in an oxide tunnel layer (SiO{sub x} = 1.5) and the tunnel oxide traps levels for a single electron photodetector (photo-SET or nanopixel). At first place, the presence of a photocurrent limited in the inversion zone under illumination in the I–V curves confirms the creation of a pair electron/hole (e–h) at high energy. This photogenerated charge carriers can be trapped in the oxide. Using the capacitance-voltage under illumination (the photo-CV measurements) we show a hysteresis chargement limited in the inversion area, indicating that the photo-generated charge carriers are stored at traps levels at the interface and within ncs-Si. The direct exchange of the photogenerated charge carriers between the interface traps levels and the ncs-Si contributed on the photomemory effect for 300 s for our nanopixel at room temperature.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Trap Passivation for Reducing On-Resistance and Saturation Voltage in Wafer-Bonded InGaAs-Channel/GaN-Drain Vertical FETs

High frequency and high power are the driving forces behind semiconductor transistor technology. However, conventional devices have the tradeoff of either being high speed or high breakdown—but not both. Wafer-bonded current aperture vertical electron transistors (BAVETs) help eliminate the tradeoff by combining a high-speed III-As channel to a high-breakdown III-N drift region. The device presented herein comprises of an InAlAs gate-barrier/InGaAs channel, wafer-bonded to an InGaN/GaN drift region, with the InGaAs/InGaN interface referred to as the wafer-bonded interface (WBI). The electronic behavior of WBIs is yet less known but necessary in realizing the potential of a BAVET. Herein, strong trap activity at the WBI is shown to be the cause of abnormally high saturation voltage ( V DS_SAT ) in BAVETs. The traps cause unintentional space charge (SC) region in the drain region of the device. This causes a drain resistance, a higher ON-resistance ( R ON ), and a higher V DS_SAT . Here, the challenge is overcome by hydrogen passivation of traps at WBI by using a p-doping for the InAlAs layer, which reduces the trap-charge concentration at the WBI. Consequently, the width of the SC region is reduced and a reduction in V DS_SAT is demonstrated, wherein it reduces from >12 to 5 V.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Wettability impact on supercritical CO 2 capillary trapping: Pore-scale visualization and quantification

How the wettability of pore surfaces affects supercritical (sc) CO 2 capillary trapping in geologic carbon sequestration (GCS) is not well understood, and available evidence appears inconsistent. Using a high-pressure micromodel-microscopy system with image analysis, we studied the impact of wettability on scCO 2 capillary trapping during short-term brine flooding (80 s, 8–667 pore volumes). Experiments on brine displacing scCO 2 were conducted at 8.5 MPa and 45°C in water-wet (static contact angle $\theta$ $20° ± 8°$) and intermediate-wet ($\theta$ $94° ± 13°$) homogeneous micromodels under four different flow rates (capillary number Ca ranging from 9 x 10 -6 to 8 x 10 -4 ) with a total of eight conditions (four replicates for each). Brine invasion processes were recorded and statistical analysis was performed for over 2000 images of scCO 2 saturations, and scCO 2 cluster characteristics. The trapped scCO 2 saturation under intermediate-wet conditions is 15% higher than under water-wet conditions under the slowest flow rate ( Ca 9 x 10 -6 ). Based on the visualization and scCO 2 cluster analysis, we show that the scCO 2 trapping process in our micromodels is governed by bypass trapping that is enhanced by the larger contact angle. Smaller contact angles enhance cooperative pore filling and widen brine fingers (or channels), leading to smaller volumes of scCO 2 being bypassed. Increased flow rates suppress this wettability effect.

54 ENVIRONMENTAL SCIENCES↗
DOE OSTI2019

Ultrathin c-Si solar cells based on microcavity light trapping scheme

Ultrathin c-Si solar cells with a new light trapping scheme, which is a double-microcavity light trapping structure, are optimized and analyzed. The results show that by optimizing the geometric parameters of each light trapping unit, the light trapping structure can effectively improve the light absorption efficiencies of ultrathin crystalline silicon cells with different thicknesses. The thinner the active layer of a crystalline silicon solar cell, the more obvious the effect of the light trapping structure to enhance the light absorption. When the active layer thickness of a crystalline silicon cell is 3 μm, the battery efficiency can reach 16.3193%.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2017

Isobar Separation in a Multiple-Reflection Time-of-Flight Mass Spectrometer by Mass-Selective Re-Trapping

A novel method for (ultra-)high-resolution spatial mass separation in time-of-flight mass spectrometers is presented. Ions are injected into a time-of-flight analyzer from a radio frequency (rf) trap, dispersed in time-of-flight according to their mass-to-charge ratios and then re-trapped dynamically in the same rf trap. This re-trapping technique is highly mass-selective and after sufficiently long flight times can provide even isobaric separation. A theoretical treatment of the method is presented and the conditions for optimum performance of the method are derived. The method has been implemented in a multiple-reflection time-of-flight mass spectrometer and mass separation powers (FWHM) in excess of 70,000, and re-trapping efficiencies of up to 35% have been obtained for the protonated molecular ion of caffeine. The isobars glutamine and lysine (relative mass difference of 1/4000) have been separated after a flight time of 0.2 ms only. Higher mass separation powers can be achieved using longer flight times. The method will have important applications, including isobar separation in nuclear physics and (ultra-)high-resolution precursor ion selection in multiple-stage tandem mass spectrometry. .

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2018

Experimental Observation of the Effects of Translational and Rotational Electrode Misalignment on a Planar Linear Ion Trap Mass Spectrometer

The performance of miniaturized ion trap mass analyzers is limited, in part, by the accuracy with which electrodes can be fabricated and positioned relative to each other. Alignment of plates in a two-plate planar LIT is ideal to characterize misalignment effects, as it represents the simplest possible case, having only six degrees of freedom (DOF) (three translational and three rotational). High-precision motorized actuators were used to vary the alignment between the two ion trap plates in five DOFs—x, y, z, pitch, and yaw. A comparison between the experiment and previous simulations shows reasonable agreement. Pitch, or the degree to which the plates are parallel along the axial direction, has the largest and sharpest impact to resolving power, with resolving power dropping noticeably with pitch misalignment of a fraction of a degree. Lateral displacement (x) and yaw (rotation of one plate, but plates remain parallel) both have a strong impact on ion ejection efficiency, but little effect on resolving power. The effects of plate spacing (y-displacement) on both resolving power and ion ejection efficiency are attributable to higher-order terms in the trapping field. Varying the DC (axial) trapping potential can elucidate the effects where more misalignments in more than one DOF affect performance. Implications of these results for miniaturized ion traps are discussed. .

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Enhancing entanglement trapping by weak measurement and quantum measurement reversal

In this paper, we propose a scheme to enhance trapping of entanglement of two qubits in the environment of a photonic band gap material. Our entanglement trapping promotion scheme makes use of combined weak measurements and quantum measurement reversals. The optimal promotion of entanglement trapping can be acquired with a reasonable finite success probability by adjusting measurement strengths. - Highlights: • Propose a scheme to enhance entanglement trapping in photonic band gap material. • Weak measurement and its reversal are performed locally on individual qubits. • Obtain an optimal condition for maximizing the concurrence of entanglement trapping. • Entanglement sudden death can be prevented by weak measurement in photonic band gap.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

The effect of original and initial saturation on residual nonwetting phase capillary trapping efficiency

Injection of supercritical carbon dioxide (CO 2 ) into geological formations is a strategy for both atmospheric greenhouse gas reduction (climate change mitigation) and enhanced oil recovery. To understand CO 2 trapping efficiency, the capillary trapping behaviors that immobilize subsurface fluids were analyzed at the pore-scale using pairs of proxy fluids representing the range of in situ nonwetting and wetting fluid properties encountered in geologic storage reservoirs. The pairs of fluids were cycled through imbibition and drainage processes using a flow cell apparatus containing a sintered glass bead column. Computed x-ray microtomography (microCT) was used to identify immobilized nonwetting fluid after imbibition and drainage events. From microCT images, the trapped residual (post-secondary imbibition) nonwetting phase was spatially correlated to both the original (post-primary imbibition) and the initial (post-primary drainage) nonwetting phase; this relationship is referred to here as the original saturation dependence (SO-dependence) and initial saturation dependence (SI-dependence), respectively. Significant trends of decreasing SO- and SI-dependence with increasing wetting and nonwetting fluid phase viscosities were observed. This finding implies that the amount of CO 2 injected and ultimately trapped is dependent on the nonwetting phase (e.g. oil or gas) already present in the formation, as well as on the manner in which supercritical CO 2 is initially injected, which are factors not considered in current trapping models. To explore the potential effect that varying viscosity and interfacial tension (IFT) might have on this process, we report on a variety of fluid pairs with different viscosities and IFT.

42 ENGINEERING↗
DOE OSTI2021

Photoluminescence Dynamics Defined by Exciton Trapping Potential of Coupled Defect States in DNA-Functionalized Carbon Nanotubes

Chemical reactions between semiconducting single-wall carbon nanotubes (SWCNTs) and single-stranded DNA (ssDNA) achieve spatially patterned covalent functionalization sites and create coupled fluorescent quantum defects on the nanotube surface, tailoring SWCNT photophysics for applications such as single-photon emitters in quantum information technologies. The evaluation of relaxation dynamics of photoluminescence (PL) from those coupled quantum defects is essential for understanding the nanotube electronic structure and beneficial to the design of quantum light emitters. Here, we measured the PL decay for ssDNA-functionalized SWCNTs as a function of the guanine content of the ssDNA oligo that dictates the red-shifting of their PL emission peaks relative to the band-edge exciton. We then correlate the observed dependence of PL decay dynamics on energy red-shifts to the exciton potential energy landscape, which is modeled using first-principles approaches based upon the morphology of ssDNA-altered SWCNTs obtained by atomic force microscopy (AFM) imaging. In this work, our simulations illustrate that the multiple guanine defects introduced within a single ssDNA strand strongly interact to create a deep exciton trapping well, acting as a single hybrid trap. The emission decay from the distinctive trapping potential landscape is found to be biexponential for ssDNA-modified SWCNTs. We attributed the fast time component of the biexponential PL decay to the redistribution of exciton population among the lowest energy bright states and a manifold of dark states emerging from the coupling of multiple guanine defects. The long lifetime component in the biexponential decay, on the other hand, is attributed to the redistribution of exciton population among different exciton trapping sites that arise from the binding of multiple ssDNA strands along the nanotube axis. AFM measurements indicate that those trapping sites are separated on average by ~8 nm along the nanotube axis.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗