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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Fabrication and accelerated long-term stability test of asymmetrical hollow fiber-supported thin film oxygen separation membrane

Asymmetrical hollow fiber-supported thin film membrane may provide microstructural advantages for air separation and oxygen production. The fabrication of such a membrane is usually very difficult, particularly the sintering behaviors and thermal expansion coefficient (TEC) mismatch among multiple layers. This directly affects the reliability and long-term stability of the membrane. Here, in this research, the sintering behaviors of a set of simple oxides are systematically studied and ZnO is identified as a material component for composite substrate La 0.6 Sr 0.4 Co 0.2 Fe 0.8 O 3-δ (LSCF)-ZnO. The LSCF-ZnO ratios are further optimized by trading off several factors, e.g., matching the sintering behaviors and TECs of the LSCF-ZnO composite with those of LSCF thin film separation layer while enhancing the substrate strength. With the identified LSCF-ZnO ratio, the LSCF-ZnO composite hollow fiber substrate precursor is formed through slurry spinning process with porous microstructure being formed via phase inversion process. The thin film LSCF dense separation layer is then dip-coated on the substrate followed by co-sintering process. A thin, porous PrBaCo(Fe 0.6 Zr 0.2 Y 0.2 )O 5+δ (PBCFZY) catalyst layer is fabricated on the dense LSCF separation layer with dip-coating and sintering process, forming an asymmetrical membrane device LSCF-ZnO/LSCF/PBCFZY. Oxygen permeation test of the device is systematically conducted, and the fundamental mechanisms are analyzed. An accelerated long-term stability test of the membrane is also conducted (~550h, 46 thermal cycling loads), demonstrating excellent robustness and durability. The device is characterized and analyzed before and after the test. By replacing a considerable amount of high cost LSCF with low cost ZnO in the substrate, it not only enhances the stability but also reduces the capital cost of the membrane for practical applications.

42 ENGINEERING↗
DOE OSTI2025

Atomic‐Scale Mechanisms of Nucleation and Stabilization in CuCrO 2 and CuFeO 2 Delafossite Thin Films on Al 2 O 3

Abstract Delafossite thin films exhibit a range of intriguing physical properties derived from their layered structure, which consists of alternating noble metal ( A + ) and ( B O 2 − ) sublayers in an AB O 2 stoichiometry. The integration of these properties into functional devices requires the successful epitaxial growth of delafossites as thin films on appropriate substrates. Unfortunately, their unique lattice geometry complicates growth, as different delafossites display variable behavior on the same substrate, often unrelated to lattice mismatch. This suggests the presence of yet unidentified stabilization mechanisms that enable the selective growth of certain delafossites, allowing them to be grown either as films themselves or to be used as buffer layers for subsequent deposition. In this study, advanced scanning transmission electron microscopy (STEM) is employed to investigate the nucleation mechanisms governing the stable growth of Cu‐based delafossites on Al 2 O 3 , specifically CuCrO 2 and CuFeO 2 thin films synthesized via molecular‐beam epitaxy. These findings reveal that a combination of a misfit dislocation network at the interface and monolayer‐deep chemical intermixing effectively relieves lattice mismatch strain. This mechanism, which differs fundamentally from that observed in Pd‐based delafossites, provides key insights into the controlled epitaxy of delafossite materials.

Scheid, Anna [Max Planck Institute for Solid State↗
NASA NTRS1998

Analysis of Hard Thin Film Coating

Marshall Space Flight Center (MSFC) is interested in developing hard thin film coating for bearings. The wearing of the bearing is an important problem for space flight engine. Hard thin film coating can drastically improve the surface of the bearing and improve the wear-endurance of the bearing. However, many fundamental problems in surface physics, plasma deposition, etc, need further research. The approach is using Electron Cyclotron Resonance Chemical Vapor Deposition (ECRCVD) to deposit hard thin film on stainless steel bearing. The thin films in consideration include SiC, SiN and other materials. An ECRCVD deposition system is being assembled at MSFC.

Shen, Dashen↗
NASA NTRS2000

Thin-Film Photovoltaic Solar Array Parametric Assessment

This paper summarizes a study that had the objective to develop a model and parametrically determine the circumstances for which lightweight thin-film photovoltaic solar arrays would be more beneficial, in terms of mass and cost, than arrays using high-efficiency crystalline solar cells. Previous studies considering arrays with near-term thin-film technology for Earth orbiting applications are briefly reviewed. The present study uses a parametric approach that evaluated the performance of lightweight thin-film arrays with cell efficiencies ranging from 5 to 20 percent. The model developed for this study is described in some detail. Similar mass and cost trends for each array option were found across eight missions of various power levels in locations ranging from Venus to Jupiter. The results for one specific mission, a main belt asteroid tour, indicate that only moderate thin-film cell efficiency (approx. 12 percent) is necessary to match the mass of arrays using crystalline cells with much greater efficiency (35 percent multi-junction GaAs based and 20 percent thin-silicon). Regarding cost, a 12 percent efficient thin-film array is projected to cost about half is much as a 4-junction GaAs array. While efficiency improvements beyond 12 percent did not significantly further improve the mass and cost benefits for thin-film arrays, higher efficiency will be needed to mitigate the spacecraft-level impacts associated with large deployed array areas. A low-temperature approach to depositing thin-film cells on lightweight, flexible plastic substrates is briefly described. The paper concludes with the observation that with the characteristics assumed for this study, ultra-lightweight arrays using efficient, thin-film cells on flexible substrates may become a leading alternative for a wide variety of space missions.

Hoffman, David J.↗
DOE OSTI2019

Protection of GaInP 2 Photocathodes by Direct Photoelectrodeposition of MoS x Thin Films

Catalytic MoS x thin films have been directly photoelectrodeposited on GaInP 2 photocathodes for stable photoelectrochemical hydrogen generation. Specifically, the MoSx deposition conditions were controlled to obtain 8-10 nm films directly on p-GaInP 2 substrates without ancillary protective layers. The films were nominally composed of MoS 2 , with additional MoO x S y and MoO 3 species detected and showed no long-range crystalline order. The as-deposited material showed excellent catalytic activity toward the hydrogen evolution reaction relative to bare p-GaInP 2 . Notably, no appreciable photocurrent reduction was incurred by the addition of the photoelectrodeposited MoSx catalyst to the GaInP 2 photocathode under light-limited operating conditions, highlighting the advantageous optical properties of the film. The MoS x catalyst also imparted enhanced durability toward photoelectrochemical hydrogen evolution in acidic conditions, maintaining nearly 85% of the initial photocurrent after 50 h of electrolysis. In total, this work demonstrates a simple method for producing dual-function catalyst/protective layers directly on high-performance, planar III-V photoelectrodes for photoelectrochemical energy conversion.

14 SOLAR ENERGY↗
DOE OSTI2022

Ultra-broadband mid-infrared generation in dispersion-engineered thin-film lithium niobate

Thin-film lithium niobate (TFLN) is an emerging platform for compact, low-power nonlinear-optical devices, and has been used extensively for near-infrared frequency conversion. Recent work has extended these devices to mid-infrared wavelengths, where broadly tunable sources may be used for chemical sensing. To this end, we demonstrate efficient and broadband difference frequency generation between a fixed 1-µm pump and a tunable telecom source in uniformly-poled TFLN-on-sapphire by harnessing the dispersion-engineering available in tightly-confining waveguides. We show a simultaneous 1–2 order-of-magnitude improvement in conversion efficiency and ∼5-fold enhancement of operating bandwidth for mid-infrared generation when compared to equal-length conventional lithium niobate waveguides. We also examine the effects of mid-infrared loss from surface-adsorbed water on the performance of these devices.

47 OTHER INSTRUMENTATION↗
NASA NTRS1969

Oriented Te thin films.

Vapor deposited tellurium thin films orientation, noting effect of characteristic spiral chain structure along c-axis

Dutton, R. W.↗
NASA NTRS1974

Preparation and evaluation of thin-film sodium tungsten bronzes

Thin films of sodium tungsten bronze (NaxWO3) were investigated as reversible sodium ion electrodes for solid electrolytes. The films were made by electron beam evaporation of the three phases, W metal, Na2WO4, and WO3, followed by sintering. The substrates were sodium beta alumina disks and glass slides. X-ray diffraction analyses of the films showed that sintering in dry nitrogen with prior exposure to air lead to mixed phases. Sintering in vacuum with no air exposure produced tetragonal I bronze with a nominal composition of Na0.31WO3, single phase within the limits of X-ray diffraction detectability. The films were uniform and adherent on sodium beta alumina substrates. The ac and dc conductivities of the beta alumina were measured with the sodium tungsten bronze films as electrodes. These experiments indicated that the tetragonal I bronze electrodes were not completely reversible. This may have resulted from sodium ion blocking within the bronze film or at the bronze beta alumina interface. Methods for attempting to make more completely reversible electrodes are suggested.

Kautz, H. E.↗
NASA NTRS1974

Ovonic switching in tin selenide thin films

Amorphous tin selenide thin films which possess Ovonic switching properties were fabricated using vacuum deposition techniques. Results obtained indicate that memory type Ovonic switching does occur in these films the energy density required for switching from a high impedance to a low impedance state is dependent on the spacing between the electrodes of the device. The switching is also function of the magnitude of the applied voltage pulse. A completely automated computer controlled testing procedure was developed which allows precise control over the shape of the applied voltage switching pulse. A survey of previous experimental and theoretical work in the area of Ovonic switching is also presented.

Baxter, C. R.↗
NASA NTRS1975

Ovonic type switching in tin selenide thin films

Amorphous tin selenide thin films which possess Ovonic type switching properties are fabricated using vacuum deposition techniques. The devices are fabricated in a planar configuration and consist of amorphous tin selenide deposited over silver contacts. Results obtained indicate that Ovonic type memory switching does occur in these films with the energy density required for switching from a high impedance to a low impedance state being dependent on the spacing between the electrodes of the device. There is also a strong implication that the switching is a function of the magnitude of the applied voltage pulse.

Baxter, C. R.↗
NASA NTRS1989

Surface temperature measurements using a thin film thermal array

A thin film device was designed and fabricated to measure surface temperatures. An array of eight integrated thermal sensors are mounted on a 0.002 inch (0.05 mm) Kapton film and multiplexed to obtain an area thermal measurement. The device was tested on a flat plate airfoil and demonstrated a temperature variation of 0.55 C maximum and 0.05 C minimum compared to embedded thermocouples. Future improvements are also discussed.

Dillon-Townes, L. A.↗
NASA NTRS1989

Directions for further development of GaAs/CuInSe2 thin film tandem cells

Multijunction thin film solar cells utilizing GaAs and CuInSe2 as semiconductor absorbers are rapidly developing, becoming a viable technology for space power systems with an unparalleled combination of high efficiency, low mass, and high radiation tolerance. The prospect for evolutionary improvement of this type of cell towards efficiency of approximately equals 30 percent and specific power greater than 1 kW/kg while retaining the attribute of high radiation tolerance are good. Limitations of the present configuration and possible avenues for circumventing these problems are presented.

Stanbery, Billy J.↗
NASA NTRS1989

Theoretical and material studies of thin-film electroluminescent devices

Thin-film electroluminescent (TFEL) devices are studied for a possible means of achieving a high resolution, light weight, compact video display panel for computer terminals or television screens. The performance of TFEL devices depends upon the probability of an electron impact exciting a luminescent center which in turn depends upon the density of centers present in the semiconductor layer, the possibility of an electron achieving the impact excitation threshold energy, and the collision cross section itself. Efficiency of such a device is presently very poor. It can best be improved by increasing the number of hot electrons capable of impact exciting a center. Hot electron distributions and a method for increasing the efficiency and brightness of TFEL devices (with the additional advantage of low voltage direct current operation) are investigated.

Summers, C. J.↗
NASA NTRS1993

Growth kinetics and characterizations of gallium nitride thin films by remote PECVD

Thin films of GaN have been deposited at relatively low growth temperatures by remote plasma-enhanced chemical-vapor deposition (RPECVD), using a plasma excited NH3, and trimethylgallium (TMG), injected downstream from the plasma. The activation energy for GaN growth has been tentatively assigned to the dissociation of NH groups as the primary N-atom precursors in the surface reaction with adsorbed TMG, or TMG fragments. At high He flow rates, an abrupt increase in the growth rate is observed and corresponds to a change in the reaction mechanism attributed to the formation of atomic N. XRD reveals an increased tendency to ordered growth in the (0001) direction with increasing growth temperature, He flow rate, and RF plasma power. IR spectra show the fundamental lattice mode of GaN at 530 cm without evidence for vibrational modes of hydrocarbon groups.

Choi, S. W.↗