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SiO2 glass has been irreversibly densified by pressures up to 250 kbar produced in a magnetic pinch apparatus. The threshold for significant densification was about 60 kbar. The recovered densities agree better with published shock wave results than with static results.
Vigarano, a type 3 carbonaceous chondrite, contains a chondrule composed of highly refractory Ca- and Al-rich glass with minor spinel. The chondrule formed from material similar to the Ca-, Al-, Ti-rich aggregates that are common in Vigarano and other type 3 chondrites and formation of these refractory aggregates must predate formation of some Vigarano chondrules. Experiments with synthetic analogs and a comparison with studies in the system CaO-MgO-Al2O3-SiO2 indicate a temperature for formation of the chondrule at or above 1700 C followed by very rapid cooling.
The conductance and capacitance of thick-oxide MOS tunnel junctions (SiO2 thickness 40 to 65 A) have been measured from 35 Hz to 210 kHz. It is demonstrated that the use of a thick-oxide MOS tunnel junction makes it possible to obtain the surface-state data throughout the whole silicon band gap with better resolution and better sensitivity than the conventional MOS capacitance techniques. A slight departure from equilibrium may occur in the voltage range where large tunnel current flows. Corrections to the energy scale must be made in this voltage range. A method for the evaluation of the junction quality is discussed. The simplified equivalent circuits necessary for the calculation of surface-state data are constructed under various bias conditions by an approach different from that used in a previously published work. The present work supports the model that at least some of the observed surface states are a consequence of the diffusion of contact metals into the oxide.
Laboratory studies reported by Huguenin (1973) on the kinetics and mechanism of the photostimulated oxidation of magnetic and preliminary laboratory data on the weathering of silicates, reported herein, are applied to Mars. Basalts in the Martian dark areas are predicted to alter to hydrated Fe(2 plus or minus) depleted clay minerals, minor goethite, and minor to trace amounts of transition metal oxides such as TiO2, MnO2, and Cr2O3 at a rate of 10 to the minus 1.5 plus or minus 1.5 micron/yr. Some Ca-Mg carbonates are also expected to be formed. The clay minerals are predicted to be more silica-rich than the silicate source material, SiO2 contents of 60% or higher being expected, and strongly depleted in Fe(2+). The oxygen, OH, and H2O contents of the bulk weathering product are predicted to be significantly greater than those of the dark-area source materials, whereas the relative bulk metal abundances should be the same.
Measurement of cathodoluminescence and photoluminescence efficiencies in powdered borosilicate glasses having different particle size and different uranium content. Excitation with 100 to 350 keV electrons and with 253.7 nm light was found to produce identical absolute radiant exitance spectra in powdered samples. The most efficient glass was one containing 29.4 wt% B2O3, 58.8 wt% SiO2, 9.8 wt% Na2O and 2.0 wt% UO2.
Models of the Jovian interiors are based on theoretical equations of state of hydrogen and helium supported by a few experimental points and an observed parameter such as oblateness, gravitational coefficients, heat emission, and magnetic fields. The models fall into three categories: (1) those which assume a uniform and rather low H2/He ratio throughout the planet, (2) those in which this ratio is solar and thus higher and (3) those which take into account the lack of complete miscibility of the two elements in the condensed state. Recent values of the observed parameters obtained by Pioneer 10 permit improvements of the first two models but also pose new questions. In the first category of models the new data indicate that the amount of hydrogen has to be increased, while in the solar models which have a heavy core (made of SiO2, MgO, Fe and Ni), the abundance of hydrogen has to be decreased, both changes pointing in the direction of incomplete miscibility present in the third category of models.
The effects of 1.2 MeV gamma radiation and 20 MeV electrons on the operational characteristics of CCDs are studied. The effects of ionizing radiation on the charge transfer efficiency, dark current, and input/output circuitry are described. The improved radiation hardness of buried channel CCDs is compared to surface channel results. Both ion implanted and epitaxial layer buried channel device results are included. The advantages of using a single thickness SiO2 gate dielectric are described. The threshold voltage shifts and surface state density changes of dry, steam, and HCl doped oxides are discussed. Recent results on the recovery times and total dose effects of high dose rate pulses of 20 MeV electrons are reported.
The potential of producing the glassy form of selected materials in the weightless, containerless nature of space processing is examined through the development of kinetic relationships describing nucleation and crystallization phenomena. Transformation kinetics are applied to a well-characterized system (SiO2), an excellent glass former (B2O3), and a poor glass former (Al2O3) by conventional earth processing methods. Viscosity and entropy of fusion are shown to be the primary materials parameters controlling the glass forming tendency. For multicomponent systems diffusion-controlled kinetics and heterogeneous nucleation effects are considered. An analytical empirical approach is used to analyze the mullite system. Results are consistent with experimentally observed data and indicate the promise of mullite as a future space processing candidate.
Recent results on tunneling in thin MOS structures are described. Thermally grown SiO2 films in the thickness range of 22-40 A have been shown to be effectively uniform on an atomic scale and exhibit an extremely abrupt oxide-silicon interface. Resonant reflections are observed at this interface for Fowler-Nordheim tunneling and are shown to agree with the exact theory for a trapezoidal barrier. Tunneling at lower fields is consistent with elastic tunneling into the silicon direct conduction band and, at still lower fields, inelastic tunneling into the indirect conduction band. Approximate dispersion relations are obtained over portions of the silicon-dioxide energy gap and conduction band.
The paper describes one possible liquid line of descent produced for a high-titanium mare basalt composition through an arbitrarily chosen series of partial equilibrium and fractional crystallization experiments on basalt 70017. The liquid line of descent leading to immiscibility at 994 C is characterized by enrichment of FeO, K2O, SiO2, and MnO and depletion of MgO and TiO2 in the residual liquids. The composition of the residual liquid at the onset of immiscibility is ferrobasaltic, and the initial appearance of immiscible liquids in the form of silica-rich spherules is in the vicinity of plagioclase-liquid contacts. The integrated bulk composition of the areas of finely exsolved liquids indicates that the trend of the liquid line of descent is at a small angle to the tie lines joining the two liquids.
The objective of this program was to establish feasibility of a process to produce low cost aluminum oxide fibers having sufficient strength, flexibility, and thermal stability for multiple re-use at temperatures to 1480 C in advanced RSI type heat shields for reentry vehicles. Using bench-scale processing apparatus, the Alcoa 'Saphiber' process was successfully modified to produce nominally 8 microns diameter polycrystalline alpha-alumina fiber. Thermal stability was demonstrated in vacuum reheating tests to 1371 C and in atmospheric reheating to 1483 C. Individual fiber properties of strength, modulus, and flexibility were not determined because of friability and short length of the fiber. Rigidized tile produced from fiber of nominally 8, 20 and 40 micron diameter had thermal conductivities significantly higher than those of RSI SiO2 or mullite at relatively low temperature but became comparable above about 1000 C. Tile densities were high due to short fiber length, especially in the coarser diameter fiber. No significant effect of fiber diameter on thermal properties could be determined form the data. Mechanical properties of tiles deteriorated as fiber diameter increased.
Experimental studies and models for In2O3/Si and SnO2/N-Si solar cells are considered for their suitability in terrestrial applications. The silicon is the active material, and the glass serves as the window to solar radiation, an antireflection coating of the Si, and a low resistance contact. Results show that amorphous windows or layers suppress photocurrent. The interfacial SiO2 layer suppresses photocurrent and increases series resistance. Suppression increases with illumination.
Two approaches have been taken to study CCD's and some of their fundamental limitations. First a numerical analysis approach has been developed to solve the coupled transport and Poisson's equation for a thorough analysis of charge transfer in a CCD structure. The approach is formulated by treating the minority carriers as a surface distribution at the Si-SiO2 interface and setting up coupled difference equations for the charge and the potential. The SOR method is proposed for solving the two dimensional Poisson's equation for the potential. Methods are suggested for handling the discontinuities to improve convergence. Second, CCD shift registers were fabricated with parameters which should allow complete charge transfer independent of the transfer electrode gap width. A test instrument was designed and constructed which can be used to test this, or any similar, three phase CCD shift register.
Solid/liquid distribution coefficients (weight basis) were experimentally determined for a number of trace elements for olivine, orthopyroxene, plagioclase and ilmenite. Values of distribution coefficients were measured at 1200 C and a f sub O2 of 10 to the -13.0 power for liquids similar in composition to the olivine-opx-plagioclase peritectic in the pseudoternary system (Fe,Mg)2SiO4-CaAl2Si2O8-SiO2. Values were also measured at 1140 C and a f sub O2 of 10 to the -12.8 power for liquids similar in composition to high-Ti mare basalts. Major and trace element partitioning and relevant phase equilibria were used to investigate possible parent-daughter relationships between a number of highland samples and highly evolved KREEP-rich materials. Out of about 80 highlands samples tested, 33 were found to be possible parents to the KREEP-rich materials. The average composition of these samples is very similar to that of the Low-K Fra Mauro basalt (LKFM). A model is proposed to explain the production of LKFM-type material and more evolved members of the KREEP suite.
The statistical nature of time-dependent dielectric breakdown characteristics in MOS capacitors was evidenced by testing large numbers of capacitors fabricated on single wafers. A multipoint probe and automatic electronic visual display technique are introduced that will yield statistical results which are necessary for the investigation of temperature, electric field, thermal annealing, and radiation effects in the breakdown characteristics, and an interpretation of the physical mechanisms involved. It is shown that capacitors of area greater than 0.002 sq cm may yield worst-case results, and that a multipoint probe of capacitors of smaller sizes can be used to obtain a profile of nonuniformities in the SiO2 films.
A proof-of-concept solar cell process has been developed that is adaptable to automation. This involved the development of a new contact system, a new antireflection coating system, a drift field cell design and a new contoured surface treatment. All these processes are performed without the use of vacuum chambers and expensive masking techniques, thus providing the possibility of reduced costs by automation using conventional semiconductor processing machinery. The contacts were printed on the cells by conventional silk screen machinery. The P(+) back field was formed by diffusing in aluminum from a printed aluminum back contact. The antireflection coating was formed by spinning on and baking a TiO2-SiO2 glass film. Air-mass-zero efficiencies of over 10% were achieved using this completely vacuum-free process.
It is pointed out that the reported measurements are useful in a study of interface charge distributions. Measurements of surface-state density at the SiO2 interface given information concerning the effect of the layer thickness on the flat-band interface charge. Other measurements provide data for a determination of the silicon-silica flat-band interface charge, the metal-silica interface charge, and the difference in barrier energies at the interfaces. Measurements of Fowler-Nordheim currents as a function of oxide thickness can be used for the determination of charge distribution in the area next to the metal-silica interface. The investigation shows that the silicon-silica interface is independent of thickness down to thicknesses as low as 40 A.
The infrared spectral measurements made by the Nimbus 4 infrared interferometer spectrometer (Iris) for a period of about 10 months are used to study the surface emissivity properties over the globe. It is found that the surface emissivity at 9 microns, as measured by Iris with a circular field of view of about 100-km diameter, is significantly less than unity over arid and semiarid areas. The spectral features in the 8-12-micron window observed over these lands reveal emissivity characteristics essentially due to quartz (SiO2). It is found that these emissivity features are significantly weakened by the presence of clay, clay horizons, or pedogenic horizons in the soil. Low emissivity is observed over sandy or sandy loam areas (psamments) with no clay or pedogenic horizons.