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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Gallium oxide (Ga2O3) as a radiation detector distinguishing neutrons and gammas

Gallium oxide (Ga2O3) is a promising ultrawide bandgap semiconductor for radiation detection with the potential of integrating electronic and scintillation functions within a single crystal device. This study establishes the scintillation response of β-Ga2O3 gamma irradiation from yttrium-88 (88Y). Then, californium-252 (252Cf) is used as a spontaneous fission source of mixed neutron and gamma radiation field to measure scintillation signals. Pulse shape discrimination and constant fraction discrimination techniques were used to separate neutron and gamma interaction events. Further investigation indicates that the prompt temporal responses of β-Ga2O3 for gammas and neutrons may enable discrimination of the two by prompt pulse fitting methods, focused around the initial peak. For gamma irradiation, we observed a rise time (τr) of 2.1 ns, decay time (τd) of 9.5 ns, and a full width at half maximum (FWHM) of 6.2 ns. For neutrons, it showed a τr of 2.3 ns, a τd of 12.1 ns, 9.4 ns FWHM, and reduced peak intensity. A diamond detector exhibited a more symmetrical τr and τd for both gamma and neutron signals and therefore is less effective at discriminating between the two by this method. This draws attention to β-Ga2O3’s ability to distinguish neutron and gamma particles. These findings showcase Ga2O3’s potential as a next-generation semiconductor for applications in nuclear safety and medical imaging, where precise discrimination between neutron and gamma interactions is essential.

Valdes, D. J. (ORCID:0000000304373720)↗
NASA NTRS2006

Carbon-Nanotube Schottky Diodes

Schottky diodes based on semiconducting single-walled carbon nanotubes are being developed as essential components of the next generation of submillimeter-wave sensors and sources. Initial performance predictions have shown that the performance characteristics of these devices can exceed those of the state-of-the-art solid-state Schottky diodes that have been the components of choice for room-temperature submillimeter-wave sensors for more than 50 years. For state-of-the-art Schottky diodes used as detectors at frequencies above a few hundred gigahertz, the inherent parasitic capacitances associated with their semiconductor junction areas and the resistances associated with low electron mobilities limit achievable sensitivity. The performance of such a detector falls off approximately exponentially with frequency above 500 GHz. Moreover, when used as frequency multipliers for generating signals, state-of-the-art solid-state Schottky diodes exhibit extremely low efficiencies, generally putting out only micro-watts of power at frequencies up to 1.5 THz. The shortcomings of the state-of-the-art solid-state Schottky diodes can be overcome by exploiting the unique electronic properties of semiconducting carbon nanotubes. A single-walled carbon nanotube can be metallic or semiconducting, depending on its chirality, and exhibits high electron mobility (recently reported to be approx.= 2x10(exp 5)sq cm/V-s) and low parasitic capacitance. Because of the narrowness of nanotubes, Schottky diodes based on carbon nanotubes have ultra-small junction areas (of the order of a few square nanometers) and consequent junction capacitances of the order of 10(exp -18) F, which translates to cutoff frequency >5 THz. Because the turn-on power levels of these devices are very low (of the order of nano-watts), the input power levels needed for pumping local oscillators containing these devices should be lower than those needed for local oscillators containing state-of-the-art solid-state Schottky diodes.

Manohara, Harish↗
NASA NTRS1997

Superconductor Semiconductor Research for NASA's Submillimeter Wavelength Missions

Wideband, coherent submillimeter wavelength detectors of the highest sensitivity are essential for the success of NASA's future radio astronomical and atmospheric space missions. The critical receiver components which need to be developed are ultra- wideband mixers and suitable local oscillator sources. This research is focused on two topics, (1) the development of reliable varactor diodes that will generate the required output power for NASA missions in the frequency range from 300 GHZ through 2.5 THz, and (2) the development of wideband superconductive mixer elements for the same frequency range.

Crowe, Thomas W.↗
DOE OSTI2023

Probing and controlling oxygen impurity diffusion in h -BN semi-bulk crystals

Combining its unique features of ultrawide bandgap (UWBG) and two-dimensional nature, h-BN has been explored for emerging applications such as deep ultraviolet optoelectronic devices and single photon emitters. One of the unusual applications of h-BN is for solid-state neutron detectors by utilizing the property of high thermal neutron capture cross section of B-10 as well as its UWBG properties. Although a record high detection efficiency of 59% has been attained by h-BN detectors, the understanding/minimization of defects and impurities is still needed to further advance the h-BN material and detector technologies. We report metal organic chemical vapor deposition growth and oxygen (O) impurity diffusion in thick h-BN. The diffusion coefficient (D) of O impurities has been measured via the evolution of an oxygen related emission with the etching depth, providing a value of D of ∼ 2 × 10−13 cm2/s at 1450 °C and supporting the interpretation that oxygen in h-BN is a substitutional donor. A multiple-buffer-layer approach was employed to mitigate to a certain degree the issue of oxygen diffusion from sapphire substrate during growth. It was demonstrated that the performance of h-BN neutron detectors fabricated from the wafer incorporating multiple buffer layers was significantly improved, as manifested by the enhanced thermal neutron detection efficiency. The advancement of the crystal growth technology of h-BN semi-bulk crystals creates applications in optoelectronic and power electronic devices utilizing the UWBG semiconductor properties of h-BN, while high efficiency h-BN neutron detectors have the potential to supplant the traditional He-3 gas detectors in various application areas by offering the obvious advantages of UWBG semiconductor technologies.

Physics↗
DOE OSTI2023

Perovskite CsPbBr 3 Single-Crystal Detector Operating at 10 10 Photons s -1 mm -2 for Ultra-High Flux X-ray Detection

Semiconductors for detecting hard radiation are confronted with considerable problems when operating at high photon fluxes. A perovskite CsPbBr 3 single-crystal detector capable of operating at X-ray fluxes of up to 10 10 photons s -1 mm -2 with beam area ≤ 0.25 mm 2 at 58.61 keV for current-mode X-ray detection is reported. The spectrometer-grade melt-grown CsPbBr 3 detectors show a gamma-ray energy resolution of ~7.5% at 122 keV for 57 Co and dark current as low as 4.3 nA (0.5 nA mm -2 ) at a reverse bias voltage of 200 V (118 V mm -1 ). The detector is tested at X-ray energies of 8.2, 10, and 58.61 keV at a synchrotron light source under a reverse bias voltage of up to 1000 V (588 V mm -1 ). Under a sufficiently high bias voltage and within several hundreds of seconds X-ray exposure, good photocurrent linearity (goodness of fit R 2 > 0.99) and reproducibility are obtained up to a flux of ≈10 10 photons s -1 mm -2 at beam area 0.25 mm 2 with Lower Limit of Detection of ≈10 5 photons s -1 mm -2 and Charge Collection Efficiency of ≈100% for 58.61 keV X-rays. Therefore, wide application of CsPbBr 3 detectors in high-flux X-ray detection is anticipated.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Assessment of Blocking Contacts in Suppressing Polarization Effects in CsPbBr 3 Perovskite Detectors

The CsPbBr 3 perovskite has garnered significant attention as a room-temperature semiconductor for hard radiation detection due to straightforward synthesis, scalable crystal growth, low cost, and excellent energy resolution. However, despite these advantages, at ambient temperature, CsPbBr 3 devices may experience performance deterioration and irreversible failure due to “polarization” induced by electromigration of ions to electrical connections on the device. In this study, we tested several contact materials and their optimization deposition techniques to assess the stability of high-performance CsPbBr 3 γ-ray detectors. Metals, with low work functions (Ti, In, Sn, Sb, Pb, Bi, Al, Au, and TiC) and high-work-function (Au or Pt) contacts, were used to form different Schottky junctions using vacuum thermal evaporation, electron-beam evaporation, and sputtering methods. These detectors were tested in intermittent and continuous modes to assess their stability. Among the tested detectors, the Bi/CLB/Pt electrode configuration demonstrated superior stability, operating effectively for 11 months under periodic testing and 16 days under continuous testing. In contrast, other configurations functioned only for a few months under intermittent conditions. Upon incorporating a ~40-nm-thick TiC passivation layer on the anode side (Bi/TiC/CLB/Pt), the CLB device operated continuously for 36 days without degradation. In many cases, the failure mode of the devices was due to the degradation of the anode. Here, the chemical changes in the fresh and deteriorated anodes were characterized using scanning electron microscopy and energydispersive X-ray spectroscopy

CsPbBr3 perovskite↗
NASA NTRS1982

III-V semiconductor solid solution single crystal growth

The feasibility and desirability of space growth of bulk IR semiconductor crystals for use as substrates for epitaxial IR detector material were researched. A III-V ternary compound (GaInSb) and a II-VI binary compound were considered. Vapor epitaxy and quaternary epitaxy techniques were found to be sufficient to permit the use of ground based binary III-V crystals for all major device applications. Float zoning of CdTe was found to be a potentially successful approach to obtaining high quality substrate material, but further experiments were required.

Gertner, E. R.↗
NASA NTRS1983

Measuring Excess Noise in SDL's

New instrument gives quantitive information on "excess noise" in semiconductor-diode laser (SDL's). By proper selection of detector, instrument tests any SDL from visible wavelengths through thermal infrared. Lasers determine excess noise in SKL source by measuring photocurrent generated in photodetector exposed first to reference laser then to SKL under test.

Katzberg, S. J.↗
NASA NTRS1990

Thermal detection of X-rays

The development of calorimeters is described in terms of their proposed application to sounding-rocket investigations of cosmic X-ray sources. The fundamental theory of the energy resolution of the devices is given, and general discussions are presented regarding the limitations associated with the materials used and available thermometer types. Also given are data describing electrical nonlinearity as a function of temperature, thermistor sensitivity, and heat capacity, as well as data regarding the excess noise that aids in the conduction process. Cryogenic calorimeters based on doped semiconductor thermistors are found to be limited, although thermal detectors have important applications to high-resolution laboratory spectroscopy. Electrical nonlinearity and the excess noise are found to be important for obtaining optimum heat capacity in the thermistor.

Mccammon, D.↗
DOE OSTI2023

Impact of photoexcitation on secondary electron emission: A Monte Carlo study

Understanding the transport of photogenerated charge carriers in semiconductors is crucial for applications in photovoltaics, optoelectronics, and photo-detectors. While recent experimental studies using scanning ultrafast electron microscopy (SUEM) have demonstrated that the local change in the secondary electron emission induced by photoexcitation enables direct visualization of the photocarrier dynamics in space and time, the origin of the corresponding image contrast still remains unclear. Here, we investigate the impact of photoexcitation on secondary electron emissions from semiconductors using a Monte Carlo simulation aided by time-dependent density functional theory. Particularly, we examine two photoinduced effects: the generation of photocarriers in the sample bulk and the surface photovoltage (SPV) effect. Using doped silicon as a model system and focusing on primary electron energies below 1 keV, we found that both the hot photocarrier effect immediately after photoexcitation and the SPV effect play dominant roles in changing the secondary electron yield (SEY), while the distribution of photocarriers in the bulk leads to a negligible change in SEY. Our work provides insights into electron–matter interaction under photo-illumination and paves the way toward a quantitative interpretation of the SUEM contrasts.

Physics↗
DOE OSTI2024

Improving CdMnTe Detector Performance by Adding 2% of Selenium

About 2% of selenium was added to CdMnTe (CMT) to reveal the role of selenium in CMT material used as a gamma-ray detector. The average etch-pit density (EPD) in a typical 2-in CdMnTeSe (CMTS) wafer was measured to be about 8.3×10 3 cm –2 except for the edge regions, and the radial nonuniformity of the bandgap along the wafer was about 2-meV. The typical mobility-lifetime product of electrons and holes was evaluated to be 3.06×10 –3 cm 2 /V and 3.1×10 –4 cm 2 /V, respectively. The energy resolution of the 122-keV photo-peak for a Co-57 radioactive source with a planar CMTS detector was 5.2%, demonstrating a positive effect associated with adding dilute amounts of Se to CMT. Finally, the enhanced detector performance in a planar CMTS detector is attributed to an improved value of hole mobility-lifetime product in CMTS, which mitigates the adverse hole tailing effect found in CdZnTe (CZT) and CMT detectors.

47 OTHER INSTRUMENTATION↗
NASA NTRS2007

Mosaic-Detector-Based Fluorescence Spectral Imager

A battery-powered, pen-sized, portable instrument for measuring molecular fluorescence spectra of chemical and biological samples in the field has been proposed. Molecular fluorescence spectroscopy is among the techniques used most frequently in laboratories to analyze compositions of chemical and biological samples. Heretofore, it has been possible to measure fluorescence spectra of molecular species at relative concentrations as low as parts per billion (ppb), with a few nm spectral resolution. The proposed instrument would include a planar array (mosaic) of detectors, onto which a fluorescence spectrum would be spatially mapped. Unlike in the larger laboratory-type molecular fluorescence spectrometers, mapping of wavelengths to spatial positions would be accomplished without use of relatively bulky optical parts. The proposed instrument is expected to be sensitive enough to enable measurement of spectra of chemical species at relative concentrations <1 ppb, with spectral resolution that could be tailored by design to be comparable to a laboratory molecular fluorescence spectrometer. The proposed instrument (see figure) would include a button-cell battery and a laser diode, which would generate the monochromatic ultraviolet light needed to excite fluorescence in a sample. The sample would be held in a cell bounded by far-ultraviolet-transparent quartz or optical glass. The detector array would be, more specifically, a complementary metal oxide/ semiconductor or charge-coupled- device imaging photodetector array, the photodetectors of which would be tailored to respond to light in the wavelength range of the fluorescence spectrum to be measured. The light-input face of the photodetector array would be covered with a matching checkerboard array of multilayer thin film interference filters, such that each pixel in the array would be sensitive only to light in a spectral band narrow enough so as not to overlap significantly with the band of an adjacent pixel. The wavelength interval between adjacent pixels (and, thus, the spectral resolution) would typically be chosen by design to be approximately equal to the width of the total fluorescence wavelength range of interest divided by the number of pixels. The unitary structure comprising the photodetector array overlaid with the matching filter array would be denoted a hyperspectral mosaic detector (HMD) array.

Son, Kyung-Ah↗
DOE OSTI2023

Assessment of deep levels with selenium concentration in Cd 1–x Zn x Te 1–y Se y room temperature detector materials

Incorporation of Se into Cd 1–x Zn x Te (CZT) to form the quaternary compound semiconductor Cd 1–x Zn x Te 1–y Se y (CZTS) has proven to be an effective solution for compensating the major flaws associated with CZT, including poor homogeneity and high concentrations of electronically active deep levels that limit the performance of CZT detectors. In order to investigate how deep levels are affected by the Se concentration in CZTS, we performed photoinduced current transient spectroscopy (PICTS) measurements on CZTS crystals grown by the traveling heater method (THM) with 10% atomic Zn and varying atomic percentage of Se from 1.5% to 7.0%. The PICTS scans for up to 4% Se showed an exponential reduction in the capture cross section of deep levels associated with Te secondary phases in conjunction with an increase in a deep level positioned near the mid-gap, which initially increases the electron trapping time before degrading again at higher Se concentrations. The PICTS peaks present in 7% Se were anomalous relative to the other crystals and are expected to originate from transition metal impurities found in the lower-purity CdSe precursor material.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Detector Performance on Surface Passivation and its Long-Term Stability

Surface passivation is an ideal technique to prepare the surfaces of fabrication Cadmium Zinc Telluride (CZT) and related semiconductor devices such as Cadmium Zinc Tellurium Selenide (CZTS). Surface passivation techniques reduce the effects of aging in the detector [1]. Surface performance effects on material performance can result in fluctuations in energy resolution over time (such as periods of a year or more). The long-term stability of surface passivation with Potassium Hydroxide (KOH) was observed with measurement of 1) current (nano Amp) vs voltage (V) and 2) spectral response and energy resolution throughout the years. Three CZTS detector samples of M2, M3, and M4 were examined using a photomultiplier tube and voltage amplifier. The Bridgman technique is used to grow the CZTS used in this study.

Johnson, Kirsten [Morgan State Univ., Baltimore, M↗
DOE OSTI2020

Proton irradiation damage and annealing effects in ON Semiconductor J-series silicon photomultipliers

Silicon photomultipliers (SiPMs) have become popular light conversion devices in recent years due to their low bias voltage and sensitivity to wavelengths emitted from common scintillating materials. These properties make them particularly attractive for resource-constrained missions such as space-based detector applications. However, the space radiation environment is known to be particularly harsh on semiconductor devices, where high particle fluences can degrade performance over time. The radiation hardness of a particular SiPM, manufactured by ON Semiconductor (formally SensL), has yet to be studied with high energy protons, which are native to the space radiation environment. As such, to study these effects we have irradiated groups of two SiPMs to four different fluences of 800 MeV protons delivered by the accelerator at the Los Alamos Neutron Science Center. Fluences of 1.68 × 10 9 , 1.73 × 10 10 , 6.91 × 10 10 , and 1.73 × 10 11 protons cm –2 , and their corresponding estimated doses of 0.15, 1.55, 6.19, and 15.5 kRad, were chosen based on estimates of the potential exposure a SiPM might receive during an interplanetary space mission lasting 10 years. We report the effects these doses have on dark current and the self-annealing time.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Charge collection and trapping mechanisms in hexagonal boron nitride epilayers

Understanding charge collection and trapping mechanisms is crucial for using hexagonal boron nitride (h-BN) as active layers for many photonic and electronic devices such as deep UV detectors and emitters, neutron detectors, and single photon emitters. Charge collection and trapping mechanisms in h-BN epilayers have been investigated by probing impurity related optical emissions under an applied electrical field. Our results suggested that the existence of oxygen impurities affects the charge collection efficiency and results in an additional emission peak at 3.75 eV, corresponding to a donor-acceptor pair (DAP) recombination involving O N (oxygen residing on the nitrogen site) donors and the V B -H (boron vacancy bonded with hydrogen complex) deep level acceptors. Experimental results further revealed that the applied electric field induces an anti-correlation between the emission intensity of the DAP transition and the charge collection efficiency from which it was shown that it is possible to find an expression to quantitatively measure the maximum charge collection efficiency in h-BN. The results introduce not only a coherent picture for the relationship between common impurities in h-BN and charge collection and trapping mechanisms but also useful insights into possible approaches to improve the quality, purity, and charge collection of the h-BN epilayers.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

An electron paramagnetic resonance study of the electron transport in heavily Si-doped high Al content AlxGa1−xN

High Al mole fraction AlGaN is an ultrawide bandgap semiconductor with potential applications in power electronics and deep UV detectors. Although n-type material is achievable with Si-doping, the role of Si is controversial, particularly for AlxGa1−xN with x > 0.8. For this paper, AlGaN films were grown by plasma-assisted molecular beam epitaxy onto bulk AlN substrates and doped with 1018–1020 cm−3 Si. We examine electron transport in heavily Si-doped AlxGa1−xN with x ≥ 0.65 using magnetic resonance, which allows us to probe the neutral donors directly rather than the free carriers and avoids complications due to electrical contacts. Transport was studied through the temperature-dependent linewidth of the electron paramagnetic resonance (EPR) signature for the neutral donor. Analysis shows evidence of hopping conductivity in the most lightly doped samples and impurity band formation in the most heavily doped ones. The EPR results, which are consistent with Hall measurements performed on the same samples, are promising for the development of highly conducting high Al content AlGaN.

Materials Science↗