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Results for “SWITCHING CIRCUIT”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
NASA NTRS1965

Flux switching in multipath cores

Flux switching in multipath ferrimagnetic core materials - computational analyses for unloaded core, loaded core, core-diode-transistor binary counter, and loaded three-leg core

SWITCHING CIRCUIT↗
NASA NTRS1968

High-efficiency step-up regulator

Single-ended step-up regulator-chopper power supply /employing conventional chopper circuitry/ combines the advantages of the chopper and switching regulator circuits. Schematic of the power supply incorporating the step-up regulator is shown.

Lister, L. R.↗
NASA NTRS1969

Isolated, multiple-output voltage dc-to-dc converter

Isolated, multiple output voltage dc-to-dc converter provides power for television transmitter used in space vehicles. The isolation is accomplished by using a single-end switching transformer circuit. The converter is completely solid state.

Source record↗
NASA NTRS1969

Accurate nine-decade temperature-compensated logarithmic amplifier

Transistor-driven temperature-stable amplifier with logarithmic operating characteristics permits presentation of the entire range of the reactor without range switching. This circuit is capable of monitoring ion chamber currents over spans of 8 or 9 decades and is used in nuclear reactor instrumentation. Application is found in materials under ultrahigh vacuum.

Bobis, J. P.↗
NASA NTRS1976

Irradiate-anneal screening of total dose effects in semiconductor devices

An extensive investigation of irradiate-anneal (IRAN) screening against total dose radiation effects was carried out as part of a program to harden the Mariner Jupiter/Saturn 1977 (MJS'77) spacecraft to survive the Jupiter radiation belts. The method consists of irradiating semiconductor devices with Cobalt-60 to a suitable total dose under representative bias conditions and of separating the parts in the undesired tail of the distribution from the bulk of the parts by means of a predetermined acceptance limit. The acceptable devices are then restored close to their preirradiation condition by annealing them at an elevated temperature. IRAN was used when lot screen methods were impracticable due to lack of time, and when members of a lot showed a diversity of radiation response. The feasibility of the technique was determined by testing of a number of types of linear bipolar integrated circuits, analog switches, n-channel JFETS and bipolar transistors. Based on the results of these experiments a number of device types were selected for IRAN of flight parts in the MJS'77 spacecraft systems. The part types, screening doses, acceptance criteria, number of parts tested and rejected as well as the program steps are detailed.

Stanley, A. G.↗
NASA NTRS1981

Ground-to-ground communications for mission support

The objective of the NASA Communications Division is to provide operational communications in support of NASA projects and mission activities. Nascom is a generic term referring collectively to a global system of circuits and switching and terminal facilities established and operated by NASA to provide longhaul operational communications support for all NASA projects. Aspects of network evolution are discussed, taking into account the integrated Nascom network. A description is presented of the present Nascom network, giving attention to the Spaceflight Tracking and Data Network (STDN), the Deep Space Network (DSN), the voice network, and the Teletypewriter (TTY) Network. Concepts and techniques for the 1980's are also considered. It is pointed out that the Nascom Network will extend the Tracking and Data Relay Satellite System (TDRSS) forward- and return-link services to users of the TDRSS by providing ground-to-ground data communications links between the NASA Ground Terminal at White Sands, New Mexico, and major user spacecraft control centers and data capture/data processing facilities.

Dickinson, W. B.↗
NASA NTRS2008

Dual-Input AND Gate From Single-Channel Thin-Film FET

A regio-regular poly(3-hexylthiophene) (RRP3HT) thin-film transistor having a split-gate architecture has been fabricated on a doped silicon/silicon nitride substrate and characterized. RRP3HT is a semiconducting polymer that has a carrier mobility and on/off ratio when used in a field effect transistor (FET) configuration. This commercially available polymer is very soluble in common organic solvents and is easily processed to form uniform thin films. The most important polymer-based device fabricated and studied is the FET, since it forms the building block in logic circuits and switches for active matrix (light-emitting-diode) (LED) displays, smart cards, and radio frequency identification (RFID) cards.

Miranda, F. A.↗