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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

Interaction of low-energy implanted atomic H with slow and fast diffusing metallic impurities in Si

The interaction of hydrogen, injected into silicon using low-energy ion bombardment, with slow (Ti and V) and fast (Cr and Au) diffusing impurities was investigated. It was found that this H ion bombardment of the Si surface was effective in reducing the electrically active concentration of only the fast diffusing impurities. The results are explained by damage enhanced diffusivity and surface gettering of the fast diffusing impurities.

Singh, R.↗
NASA NTRS1985

Observed changes in a-Si:H cell characteristics due to long term temperature stress

Determination of thermally induced degradation mechanisms affecting thin film amorphous silicon solar cells through the use of laboratory accelerated stress testing requires acquisition of specially constructed, individually addressable test cells and the development of highly repeatable instrumentation which is not influenced by short-term reversible optical effects. This paper illustrates these considerations by describing accelerated temperature stress procedures and test results for one type of a-Si:H cell. Observed electrical characteristic changes indicate that two types of stress induced mechanisms are operating - one of which is self limiting and can be observed at lower temperatures and one which continues to complete degradation. The self limiting mechanism can result in a dramatic improvement to cells having initially low Voc values.

Lathrop, Jay W.↗
NASA NTRS1986

Statistics of equivalent width data and new oscillator strengths for Si II, Fe II, and Mn II

Equivalent width data from Copernicus and IUE appear to have an exponential, rather than a Gaussian distribution of errors. This is probably because there is one dominant source of error: the assignment of the background continuum shape. The maximum likelihood method of parameter estimation is presented for the case of exponential statistics, in enough generality for application to many problems. The method is applied to global fitting of Si II, Fe II, and Mn II oscillator strengths and interstellar gas parameters along many lines of sight. The new values agree in general with previous determinations but are usually much more tightly constrained. Finally, it is shown that care must be taken in deriving acceptable regions of parameter space because the probability contours are not generally ellipses whose axes are parallel to the coordinate axes.

Van Buren, Dave↗
NASA NTRS1986

Behavior of insoluble particles during parabolic flight solidification processing of Fe-C-Si and Fe-C-V alloys

In a high-g rapid solidification environment, Fe-base alloy insoluble particles at the solidification interface may be pushed ahead of the interface or may be trapped in the solid, depending on the correlation of various interface energies, the solidification rates, and the Stokes force; particle agglomeration due to buoyancy-driven convection further complicates the problem. Attention is presently given to results obtained for directionally solidified Fe-C-Si and Fe-C-V alloys during parabolic low-g flight and ground experiments. In these systems, graphite and vanadium carbide can be considered to be the insoluble particles.

Stefanescu, D. M.↗
NASA NTRS1988

Study of Staebler-Wronsky degradation effect in a Si:H based P-I-N solar cells

The objective of this study is to improve the stability and efficiency of thin solar cells with emphasis on a-Si:H devices. The research project was broken down into three main phases. The first involves designing and building a UHV glow discharge system; the second involves making good quality films and eventually efficient cells; the final phase will be analytical.

Naseem, Hameed↗
NASA NTRS1987

Characteristics of annealed p/n junctions between GaAs and Si(100)

Electrical characteristics of a GaAs(p)/Si(n) interface were determined from capacitance-voltage, current-voltage, and secondary ion mass spectroscopy (SIMS) measurements and compared to those on GaAs(p) epitaxial layers on GaAs(n) substrates. The comparison was made between the junctions as grown, and after an anneal at 850 C for 20 min in 10 percent forming gas under an As overpressure. For the GaAs/Si junction the ideality factor changed from 2 or larger to 1.5 and the apparent intercept voltage changed from 2.5 to 1.3 V after annealing. For the GaAs homojunction, the intercept voltage increased from 1.1 to 1.3 V. In addition, the excess current in the forward and reverse bias conditions dropped drastically in the heterojunction. No movement of the metallurgical junction was discernible to within the resolution capability of SIMS. The junction properties obtained by annealing suggest an atomic restructuring of the Si(100) interface during growth or annealing. These new results raise the possibility that the GaAs/Si interface can be made into an electrically viable junction and incorporated into active devices.

Unlu, M. S.↗
NASA NTRS1988

Kinetics of low pressure CVD growth of SiO2 on InP and Si

The kinetics of low pressure CVD growth of SiO2 from SiH4 and O2 has been investigated for the case of an indirect (remote) plasma process. Homogeneous (gas phase) and heterogeneous operating ranges have been experimentally identified. The process was shown to be consistent within the heterogeneous surface-reaction dominated range of operation. A kinetic rate equation is given for growth at 14 W RF power input and 400 mtorr total pressure on both InP and Si substrates. The process exhibits an activation energy of 8.4 + or - 0.6 kcal/mol.

Iyer, R.↗
NASA NTRS1987

In situ process diagnostics of silane plasma for device-quality a-Si:H deposition

Coherent anti-Stokes Raman spectroscopy (CARS) and mass spectrometry (MS) have been applied to in situ process diagnostics of a silane plasma for device-quality a-Si:H film deposition. Silane depletion was directly measured by CARS and is linearly dependent on RF power in the region of 4-12 W with a slope of 0.5 percent/mW-sq cm. The depletion is also dependent on SiH4 flow rate starting with a 50 percent depletion at a low flow rate of 5.6 sccm and asymptotically approaching an 8 percent depletion at a flow rate of 80 sccm. The mass spectral line signal intensity of disilane increases with RF power and shows an apparent transition at 6 W. Disilane formation in silane plasma, film deposition rate, and silane depletion ratio as a function of the RF power indicate that the film growth mechanism in the low-power region of 3.5-6.5 W is substantially different from that in the high-power region of 6.5-12 W.

Shing, Y. H.↗
NASA NTRS1987

Corrosion of a-Si cells and modules

The authors report on corrosion/erosion phonemena observed in exposing a-Si cells, modules, and specially designed test structures to natural and accelerated test environments. Relevant cell and module I-V curve data used for monitoring degradation are presented. The causes of the observed degradation, methods of mitigation, and consequences for fielded modules are discussed.

Mon, G. R.↗
NASA NTRS1988

Growth of (111) GaAs on (111) Si using molecular-beam epitaxy

(111) GaAs layers have been grown epitaxially on (111) Si wafers, both on-axis as well as 3-deg off-axis towards the 1 -1 0 direction, using molecular-beam epitaxy. The grown layers have been characterized by scanning electron microscopy, X-ray diffraction, and transmission electron microscopy.

Radhakrishnan, G.↗
NASA NTRS1988

Low-temperature photoluminescence studies of chemical-vapor-deposition-grown 3C-SiC on Si

Low-temperature photoluminescence studies of 26 cubic SiC films, ranging in thickness from 600 A to 25 microns, grown by CVD on (100)Si are presented. It is suggested that the G band near 1.90-1.92 eV and its phonon side bands G1 and G2 are related to dislocations and extended defects. Formulas for the band-gap shift due to an axial stress have been obtained and applied to the CVD 3C-SiC/Si system. The results indicate that a 1-3-micron transition layer greatly reduces the interface misfit strain, and that biaxial stress in the SiC/Si system depresses the intensity of the no-phonon line.

Choyke, W. J.↗
NASA NTRS1988

Al(0.3)Ga(0.7)As / Al(0.05)Ga(0.95)As light-emitting diodes on GaAs-coated Si substrates grown by liquid phase epitaxy

Al(0.3)Ga(0.7)As/Al(0.05)Ga(0.95)As double-heterostructure light-emitting diodes (LEDs) were successfully grown for the first time by liquid phase epitaxy on a GaAs-coated Si substrate that was prepared by a sequential process of migration-enhanced epitaxy and molecular beam epitaxy. The edge-emitting LEDs had diode ideality factors of 1.54 at a forward-biased voltage higher than 0.9 V and external quantum efficiencies of 0.0033 W/A per facet. This efficiency is 50 times higher than the previously reported value, and is on the same order as that of AlGaAs homojunction LEDs fabricated on the GaAs substrates by liquid phase epitaxy.

Sakai, Shiro↗
NASA NTRS1988

Supercooling effects in faceted eutectic Nb-Si alloys

The effect of melt supercooling on the microstructure of an Nb-58 at. pct Si alloy is investigated experimentally using an electromagnetic levitation apparatus. It is found that, starting with an alloy nominally of eutectic composition, nucleation of Nb5Si3 occurs in the supercooled liquid first. Upon further cooling, the remaining liquid continues to supercool until the second phase, NbSi2 is nucleated, which is commonly accompanied by rapid recalescence. The primary phase exibits a eutectoid-type decomposition. The observations are discussed with reference to the results of quantitative microstructural measurements, compositional and thermal analysis, and preliminary thermodynamic modeling of the phase diagram.

Gokhale, A. B.↗
NASA NTRS1988

Growth and characterization of GaAs layers on Si substrates by migration-enhanced molecular beam epitaxy

Migration-enhanced molecular beam epitaxial (MEMBE) growth and characterization of the GaAs layer on Si substrates (GaAs/Si) are reported. The MEMBE growth method is described, and material properties are compared with those of normal two-step MBE-grown or in situ annealed layers. Micrographs of cross-section view transmission electron microscopy and scanning surface electron microscopy of MEMBE-grown GaAs/Si showed dislocation densities of 10 to the 7th/sq cm. AlGaAs/GaAs double heterostructures have been successfully grown on MEMBE GaAs/Si by both metalorganic chemical vapor deposition and liquid phase epitaxy.

Kim, Jae-Hoon↗
NASA NTRS1988

Electrochemical evaluation of the p-Si/conducting polymer interfacial properties

Results are presented from an experimental investigation of the contact resistance and interfacial properties of a p-Si/conducting polymer interface for solar cell applications. The electronic character of the polymer/semiconductor function is determined by studying the electrochemical behavior of both poly(isothianapthene) (PITN) and polypyrrole (PP) in an acetonitrile solution on p-silicon electrodes. The results obtained indicate that while PITN is intrinsically more conductive than PP, neither passivates surface states nor forms ohmic contact.

Nagasubramanian, G.↗
NASA NTRS1989

A space qualified thermal imaging system using a Pt Si detector array

EDO Corporation, Barnes Engineering Division designed and constructed a high resolution thermal imaging system on contract to Lockheed for use in the SDI Star Lab. This employs a Pt Si CCD array which is sensitive in the spectral range of 3 to 5 microns. Star Lab will be flown in the Shuttle bay and consists basically of a large, reflecting, tracking telescope with associated sensors and electronics. The thermal imaging system is designed to operate in the focal plane of this telescope. The configuration of the system is illustrated. The telescope provides a collimated beam output which is focussed onto the detector array by a silicon objective lens. The detector array subtends a field of view of 1.6 degrees x 1.22 degrees. A beam switching mirror permits bypassing the large telescope to give a field of 4 degrees x 3 degrees. Two 8 position filter wheels are provided, and background radiation is minimized by Narcissus mirrors. The detector is cooled with a Joule-Thompson cryostat fed from a high pressure supply tank. This was selected instead of a more convenient closed-cycle system because of concern with vibration. The latter may couple into the extremely critical Starlab tracking telescope. The electronics produce a digitized video signal for recording. Offset and responsivity correction factors are stored for all pixels and these corrections are made to the digitized output in real time.

Astheimer, Robert W.↗
NASA NTRS1989

Initial astronomical results with a new 5-14 micron Si:Ga 58x62 DRO array camera

A new array camera system was developed using a 58 x 62 pixel Si:Ga (gallium doped silicon) DRO (direct readout) photoconductor array detector manufactured by Hughes/Santa Barbara Research Center (SBRC). The camera system is a broad band photometer designed for 5 to 14 micron imaging with large ground-based optical telescopes. In a typical application a 10 micron photon flux of about 10(exp 9) photons sec(exp -1) m(exp -2) microns(exp -1) arcsec(exp -2) is incident in the telescope focal plane, while the detector well capacity of these arrays is 10(exp 5) to 10 (exp 6) electrons. However, when the real efficiencies and operating conditions are accounted for, the 2-channel 3596 pixel array operates with about 1/2 full wells at 10 micron and 10% bandwidth with high duty cycle and no real experimental compromises.

Gezari, Dan↗
NASA NTRS1989

Improved Si:As BIBIB (Back-Illuminated Blocked-Impurity-Band) hybrid arrays

Results of a program to increase the short wavelength (less than 10 microns) detective quantum efficiency, eta/beta, of Si:As Impurity Band Conduction arrays are presented. The arrays are epitaxially grown Back-Illuminated Blocked (BIB) Impurity-Band (BIBIB) 10x50 detectors bonded to switched-FET multiplexers. It is shown that the 4.7 microns detective quantum efficiency increases proportionately with the thickness of the infrared active layer. A BIB array with a thick active layer, designed for low dark current, exhibits eta/beta = 7 to 9 percent at 4.7 microns for applied bias voltages between 3 and 5 V. The product of quantum efficiency and photoelectric gain, etaG, increases from 0.3 to 2.5 as the voltage increases from 3 to 5 V. Over this voltage range, the dark current increases from 8 to 120 e(-)s(-1) at a device temperature of 4.2 K and is under 70 e(-)s(-1) for all voltages at 2 K. Because of device gain, the effective dark current (equivalent photon rate) is less than 3 e(-)s(-1) under all operating conditions. The effective read noise (equivalent photon noise) is found to be less than 12 electrons under all operating conditions and for integration times between 0.05 and 100 seconds.

Herter, T.↗