Break out session -Radiative recombination continuum test.
Abstract not provided.
Loisel, Guillaume Pascal↗
SEARCH · Engineering Papers
Results for “Recombinant”
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In vitro recombination method
The present invention relates, e.g., to in vitro method, using isolated protein reagents, for joining two double stranded (ds) DNA molecules of interest, wherein the distal region of the first DNA molecule and the proximal region of the second DNA molecule share a region of sequence identity, comprising contacting the two DNA molecules in a reaction mixture with (a) a non-processive 5′ exonuclease; (b) a single stranded DNA binding protein (SSB) which accelerates nucleic acid annealing; (c) a non strand-displacing DNA polymerase; and (d) a ligase, under conditions effective to join the two DNA molecules to form an intact double stranded DNA molecule, in which a single copy of the region of sequence identity is retained. The method allows the joining of a number of DNA fragments, in a predetermined order and orientation, without the use of restriction enzymes.
Young, Lei↗
Recombinant yeast having increased tolerance to ionic liquids and methods of use
The present invention relates to materials and methods for the production of ethanol. More particularly, the present invention provides genetically modified strains of Saccharomyces cerevisiae having enhanced tolerance for ionic liquid (IL) toxicity. Also provided are methods of using such genetically engineered yeast strains for improved IL-mediated hydrolysis of lignocellulosic biomass for industrial-scale production of various fuels, chemical feedstocks, and synthetic polymers.
Piotrowski, Jeff Scott↗
Recombinant microorganisms and uses therefor
Microorganisms are genetically engineered to produce 3-hydroxypropionate (3-HP). The microorganisms are carboxydotrophic acetogens. The microorganisms produce acetyl-coA using the Wood-Ljungdahl pathway for fixing CO/CO 2 . A β-alanine pyruvate aminotransferase from a microorganism that contains such an enzyme is introduced. Additionally, an acetyl-coA carboxylase may also be introduced. The production of 3-HP can be improved. This can be effected by improved promoters or higher copy number or enzymes that are catalytically more efficient.
Liew, Fungmin↗
Comparative Studies of Optoelectrical Properties of Prominent PV Materials: Halide Perovskite, CdTe, and GaAs
We compare three representative high performance PV materials: halide perovskite MAPbI3, CdTe, and GaAs, in terms of photoluminescence (PL) efficiency, PL lineshape, carrier diffusion, and surface recombination and passivation, over multiple orders of photo-excitation density or carrier density appropriate for different applications. An analytic model is used to describe the excitation density dependence of PL intensity and extract the internal PL efficiency and multiple pertinent recombination parameters. A PL imaging technique is used to obtain carrier diffusion length without using a PL quencher, thus, free of unintended influence beyond pure diffusion. Our results show that perovskite samples tend to exhibit lower Shockley-Read-Hall (SRH) recombination rate in both bulk and surface, thus higher PL efficiency than the inorganic counterparts, particularly under low excitation density, even with no or preliminary surface passivation. PL lineshape and diffusion analysis indicate that there is considerable structural disordering in the perovskite materials, and thus photo-generated carriers are not in global thermal equilibrium, which in turn suppresses the nonradiative recombination. This study suggests that relatively low point-defect density, less detrimental surface recombination, and moderate structural disordering contribute to the high PV efficiency in the perovskite. This comparative photovoltaics study provides more insights into the fundamental material science and the search for optimal device designs by learning from different technologies.
14 SOLAR ENERGY↗
Unexpected origin of the quantum efficiency reduction in long-wavelength (In,Ga)N light-emitting diodes
Differential carrier lifetime (DCL) measurements were performed on c-plane In 𝑥 Ga 1−𝑥 N/GaN single-quantum-well (QW) light-emitting diodes (LEDs) with varying indium-content QWs (x = 13.5%, 16%, 22%), emitting with violet, blue, and green wavelengths. The recombination lifetimes of LEDs were found to increase with increasing indium composition, resulting in increased carrier densities n measured by DCL. Extraction of the A coefficients, which are assumed to not vary with n, and of the effective B(n) and C(n) coefficients of the ABC model of the internal quantum efficiency (IQE) of QWs showed no significant changes in the A coefficient with increasing indium content [In] in the In 𝑥 Ga 1−𝑥 N QW, and a reduction in the B(n) and C(n) coefficients with increasing [In]. When looking at the Shockley-Read-Hall (SRH) recombination rate An, the radiative recombination rate B(n)𝑛 2 , and the Auger-Meitner (AM) recombination rate C(n)𝑛 3 , we observed that at any given n, the SRH rate is the same for the three [In] measured, while the radiative rate decreases (by up to approximately 9 times) and the AM rate decreases (by up to approximately 7 times) with increasing indium content. This shows that the larger reduction in radiative recombination rates relative to nonradiative recombination rates with increasing [In] is the largest contributor to the decreased quantum efficiencies of LEDs (the “green gap”) at any given n. While some of the reduction in the effective recombination coefficients B(n) and C(n) can be explained by the reduced wave-function overlaps of the QW with increasing indium content, the larger reduction of B(n) relative to C(n) motivates further study of the intrinsic recombination coefficients 𝐵 0 and 𝐶 0 of bulk In 𝑥 Ga 1−𝑥 N alloys and how they are related to the effective recombination coefficients B(n) and C(n) in QWs. The relative contributions of nonradiative recombination are enhanced at any given current density due to the sublinear relationship between the carrier density n and the current density. Thus, the solution to the green gap, up to any intrinsic limitations set by the indium content of the QW, from an IQE perspective, requires the design of long-wavelength (In,Ga)N LEDs with improved wave-function overlaps that can operate with a lower carrier density at any given current density.
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
Microsecond Carrier Lifetimes in Polycrystalline CdSeTe Heterostructures and in CdSeTe Thin Film Solar Cells
We report significant advances in understanding and reducing nonradiative Shockley-Read-Hall recombination in polycrystalline CdSe x Te 1-x , leading to microsecond charge carrier lifetimes. In undoped Al 2 O 3 -passivated heterostructures we find external radiative efficiency 0.2%, quasi-Fermi level splitting 950 mV, mobility 100 cm 2 /(Vs), and diffusion length 14 µm. In solar cells measured lifetimes can exceed 1 µs. We interpret this data to indicate MgZnO/CdSeTe interface recombination velocity <; 100 cm/s. Based on our results, it appears CdTe PV technology has potentially overcome longstanding “recombination lifetime” limitation and in the near future will transition to improving other aspects of device design.
41 EE - Solar Energy Technologies Office (EE-4S)↗
Impact of dopant-induced band tails on optical spectra, charge carrier transport, and dynamics in single-crystal CdTe
Abstract Cadmium telluride (CdTe) semiconductors are used in thin-film photovoltaics, detectors, and other optoelectronic applications. For all technologies, higher efficiency and sensitivity are achieved with reduced charge carrier recombination. In this study, we use state-of-the-art CdTe single crystals and electro-optical measurements to develop a detailed understanding of recombination rate dependence on excitation and temperature in CdTe. We study recombination and carrier dynamics in high-resistivity (undoped) and arsenic (As)-doped CdTe by employing absorption, the Hall effect, time-resolved photoluminescence, and pump-probe in the 80–600 K temperature range. We report extraordinarily long lifetimes (30 µs) at low temperatures in bulk undoped CdTe. Temperature dependencies of carrier density and mobility reveal ionization of the main acceptors and donors as well as dominant scattering by ionized impurities. We also distinguish different recombination defects. In particular, shallow As Te and deep V Cd −As Cd acceptors were responsible for p-type conductivity. AX donors were responsible for electron capture, while nonradiative recombination centers (V Cd −As Te , As 2 precipitates), and native defects (V Cd −Te Cd ) were found to be dominant in p-type and n-type CdTe, respectively. Bimolecular and surface recombination rate temperature dependencies were also revealed, with bimolecular coefficient T −3/2 temperature dependence and 170 meV effective surface barrier, leading to an increase in surface recombination velocity at high temperatures and excitations. The results of this study allowed us to conclude that enhanced crucible rotation growth of As-doped CdTe is advantageous to As activation, leading to longer lifetimes and larger mobilities and open-circuit voltages due to lower absorption and trapping.
36 MATERIALS SCIENCE↗
Cross-Cutting Metrology Tools for In Operando Characterization of Carrier Dynamics in Photovoltaic Devices (Final Technical Report)
Understanding the nature of recombination and its dependence on defects and interfaces is essential for engineering materials and contacts for higher V oc and photovoltaic (PV) efficiency. Time-resolved photoluminescence (TRPL) has conventionally been used to evaluate recombination, but not all materials are strongly emissive or otherwise suitable. Time-resolved terahertz spectroscopy is a pump – probe method that presents valuable complementary information, wherein an optical pump pulse photoexcites carriers within the absorber and the transient photoconductivity is probed with a terahertz pulse. Until now, experimental constraints have prohibited the use of terahertz probes to interrogate full device stacks, and measurements were instead made on exfoliated films or films grown on unconventional substrates. However, interfaces are critical to the behavior of photoexcited carriers in solar cells, and the substrates themselves often influence the film growth and bulk properties. Therefore, it is important to probe the behavior of PV absorbers as close as possible to their normal operating conditions. Here we have developed cross-cutting metrology that enable in operando characterization of carrier dynamics and recombination mechanisms in working PV devices. Through a combination of complementary non-contact TRTS and TRPL experiments and modeling, we have obtained key parameters including photoexcited carrier bulk lifetime and interface and back surface recombination velocities with greater precision and accuracy than can be achieved with conventional TRPL alone. By varying pulsed photoexcitation conditions, the contributions of interface and bulk recombination mechanisms can be determined. We have developed and refined this characterization approach by investigating CdTe PVs, which is a well-established technology but with significant margin for further improvements in efficiency. Results were published in Journal of Applied Physics (DOI: 10.1063/5.0064730) and Proceedings of the IEEE PVSC (DOI: 10.1109/PVSC43889.2021.9518559). After validating the approach, we have applied it to correlate recombination rates to processing conditions and material properties, including composition and defects as well as interfaces and surface treatments. Such feedback can inform processing and design choices to enable higher PV efficiency, not only for CdTe, but also CdSe x Te 1-x , CIGS, perovskites, kesterites, and future technologies. A perspective on predicting solar cell performance from terahertz spectroscopy was published in Advanced Energy Materials (DOI: 10.1002/aenm.202102776). The cross-cutting metrology tools developed here will enable determination of the locus and mechanism of performance-limiting recombination in thin film PV devices. This feedback can guide the engineering of PV devices with higher V oc and efficiency, thereby leading to reductions in levelized cost of electricity to meet the SunShot 2030 target of $0.03/kWh for utility-scale PV. Lower costs will enable rapid expansion of renewable electricity generation that is nearly free of carbon emissions. Reducing carbon emissions of the electricity sector is one of the most important solutions to climate change. The project’s specific focus on CdTe PV can benefit First Solar, the US company that is the global leader in CdTe technology, through both technology and workforce development.
14 SOLAR ENERGY↗
Impact of Carrier Concentration and Carrier Lifetime on MgZnO/CdSeTe/CdTe Solar Cells
Here, the performance impact of multiple parameters related to the use of MgZnO (MZO) as the emitter for bilayer CdSeTe/CdTe solar cells has been investigated in detail through numerical simulations. Such a comprehensive study is particularly important, because while cell fabrication using MZO has been highly successful in some cases, it has been less so in others, and it has not been clear which combinations of parameter values are most effective. The parameters considered here include the recombination velocity at the emitter/absorber interface, bulk recombination lifetime, and the carrier concentrations of the emitter and absorber. The ranges chosen for the simulation parameters are those most likely to be found experimentally. The primary finding is that independent of the interfacial recombination velocity and bulk recombination lifetime, the MZO carrier density should be > 1017 cm-3 and in any case greater than that of the absorber to reduce interface recombination. At the same time, a shallow dopant the order of 50 meV or less should reduce SRH recombination in the bulk and enable VOC > 1V.
14 SOLAR ENERGY↗
Near surface defects: Cause of deficit between internal and external open-circuit voltage in solar cells
The presence of interface recombination in a complex multilayered thin-film solar structure causes a disparity between the internal open-circuit voltage (V OC,in ), measured by photoluminescence, and the external open-circuit voltage (V OC,ex ) i.e. an additional V OC deficit. Higher V OC,ex value aim require a comprehensive understanding of connection between V OC deficit and interface recombination. Here, a deep near-surface defect model at the absorber/buffer interface is developed for copper indium di-selenide solar cells grown under Cu excess conditions to explain the disparity between V OC ,in and V OC,ex . The model is based on experimental analysis of admittance spectroscopy and deep-level transient spectroscopy, which show the signature of deep acceptor defect. Further, temperature-dependent current-voltage measurements confirm the presence of near surface defects as the cause of interface recombination. The numerical simulations show strong decrease in the local V OC ,in near the absorber/buffer interface leading to a V OC deficit in the device. This loss mechanism leads to interface recombination without a reduced interface bandgap or Fermi level pinning. Further, these findings demonstrate that the V OC ,in measurements alone can be inconclusive and might conceal the information on interface recombination pathways, establishing the need for complementary techniques like temperature dependent current voltage measurements to identify the cause of interface recombination in the devices.
14 SOLAR ENERGY↗
Efficacy of antivirals and mRNA vaccination against an XBF clinical isolate
Recombination events occur frequently in severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2), resulting in genetic diversity. Because these events contribute to altered host immune evasion and antiviral susceptibility, it is crucial to evaluate the efficacy of COVID-19 vaccines and antivirals against recombinant variants. As of March 2023, XBB.1.5, a recombinant sublineage of XBB, is currently the dominant form globally (Fig. S1A, Supplementary Appendix). XBB emerged as a result of recombination between two BA.2 descendants, BJ.1 and BM.1.1.1 (a progeny of BA.2.75). We and other groups have shown that XBB.1.5 is resistant to several therapeutic monoclonal antibodies and effectively evades humoral immunity elicited by natural infection or COVID-19 vaccination.1, 2, 3 By March 30, 2023, an additional recombinant variant, XBF, had been sampled 8966 times in 47 countries and territories in GISAID, reaching it highest prevalence in Australia and New Zealand (Fig. S2, Supplementary Appendix). XBF is still increasing in frequency, although the prevalence of XBB.1.5 appears to be increasing at a faster pace in most regions (Fig. S1B, Supplementary Appendix). XBF is a recombinant of BA.5.2.3 (a descendant of BA.5) and CJ.1 (a descendant of BA.2.75) and, like CJ.1, has an additional three substitutions (R346T, F486P, and F490S) in the receptor-binding domain (RBD) of the consensus form of its spike protein compared to baseline BA.2.75 (Fig. S3A, Supplementary Appendix). CJ.1 and its related sublineage CJ.1.1 did not expand as extensively as XBF, being sampled in GISAID only 1589 and 142 times respectively. CJ.1 was found circulating in many countries, but most commonly sampled in South Korea, where it is still increasing and has currently reached about 5% of the sampled population. CJ.1.1 was most frequently sampled in Malaysia and Singapore, but remained rare in both nations, peaking at about 1% of the sample in December of 2022. Despite the importance of these related variants, we have no information about the antiviral efficacy and immunity induced by COVID-19 vaccines against a clinical isolate of XBF.
60 APPLIED LIFE SCIENCES↗
Pb dimerization greatly accelerates charge losses in MAPbI 3 : Time-domain ab initio analysis
Metal halide perovskites constitute a new type of semiconducting materials with long charge carrier lifetimes and efficient light-harvesting. The performance of perovskite solar cells and related devices is limited by nonradiative charge and energy losses, facilitated by defects. Combining nonadiabatic molecular dynamics and time-domain density functional theory, we demonstrate that charge losses depend strongly on the defect chemical state. By considering an extra Pb atom in CH 3 NH 3 PbI 3 , which is a common defect in lead halide perovskites, we investigate its influence on charge trapping and recombination. In a chemically inert form as a Pb interstitial, the extra Pb atom has only a mild influence on charge recombination. However, if the extra Pb atom binds to a native Pb atom to form a dimer, the charge trapping and recombination are greatly accelerated because the Pb-dimer creates a localized midgap trap state that couples strongly to the perovskite valence band edge. Holes disappear from the valence band two orders of magnitude faster than in the pristine perovskite and recombine with conduction band electrons one order of magnitude faster. The simulations identify the phonon modes involved in the nonradiative charge trapping and recombination and highlight the importance of rapid decoherence within the electronic subsystem for long carrier lifetimes. The detailed atomistic analysis of the charge trapping and recombination mechanisms enriches the understanding of defect properties and provides theoretical guidance for improving perovskite performance.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Measurement of the conduction band spin-orbit splitting in $\mathrm{WSe_2}$ and $\mathrm{WS_2}$ monolayers
We have investigated charge tunable devices based on $\mathrm{WSe_2}$ and $\mathrm{WS_2}$monolayers encapsulated in hexagonal boron nitride. In addition to the well-known radiative recombination of neutral and charged excitons, stationary photoluminescence measurements highlight a weaker-intensity optical transition that appears when the monolayer is electrostatically doped with electrons. We have carried out a detailed characterization of this photoluminescence line based on its doping dependence, its variation as a function of the optical excitation power, its polarization characteristics, and its g factor measured under longitudinal magnetic field. We interpret this luminescence peak as an impurity-assisted radiative recombination of the intervalley negatively charged exciton (triplet trion). In addition to the standard direct recombination, the triplet trion has a second recombination channel triggered by elastic scattering off the short-range impurity potential. The energy difference between the emitted photons from these two possible recombination processes of the same triplet trion is simply the single-particle conduction band spin-orbit splitting Δ c . We measure Δ c = 12 ± 0.5 meV for the $\mathrm{WSe_2}$ monolayer and Δ c = 12 ± 1 meV for the $\mathrm{WS_2}$ monolayer. Here, these results demonstrate the importance of second-order exciton recombination processes in transition-metal dichalcogenide structures.
2-dimensional systems↗
Feedback between radiation and transport in photovoltaics
By building on the generalized Hovel model, this work develops an analytical solution to unify photon recycling, light trapping, and carrier transport in solar cells. Enhanced transport due to photon recycling diffusion is considered. While photon recycling diffusion is often negligible, it can significantly support transport in cases where charge diffusion is low but radiative efficiency is high. Next, the diffusion equation is solved to determine carrier collection for planar and textured cells. Results elucidate novel features in the external quantum efficiency (EQE) curve that occur for textured cells with high absorption and limited transport. Then, the effect of limited transport on the radiative recombination of solar cells is investigated in detail. While the traditional treatment of detailed balance uses the applied voltage to calculate a cell's radiative recombination, the present approach uses the spatially resolved quasi-Fermi-level splitting (QFLS). Further, the discrepancy between the models is shown to be inconsequential to performance for cells with low radiative recombination (Si) or with high mobilities (lowly doped GaAs). However, for cells with high radiative recombination and low mobility (highly doped GaAs, polycrystalline CdTe, and thin-film perovskites), incorporating variation in QFLS in the determination of radiative recombination can become necessary for accurate photovoltaic modeling.
14 SOLAR ENERGY↗
Multiple-carrier-lifetime model for carrier dynamics in InGaN/GaN LEDs with a non-uniform carrier distribution
Here we introduce a multiple-carrier-lifetime model (MCLM) for light-emitting diodes (LEDs) with non-uniform carrier distribution, such as in multiple-quantum-well (MQW) structures. By employing the MCLM, we successfully explain the modulation response of V-pit engineered MQW LEDs, which exhibit an S 21 roll-off slower than –20 dB/decade. Using the proposed model and employing a gradient descent method, we extract effective recombination and escape lifetimes by averaging the carrier behavior across the quantum wells. Our results reveal slower effective carrier recombination and escape in MQW LEDs compared with LEDs emitting from a single QW, indicating the advantages of lower carrier density achieved through V-pit engineering. Notably, the effective carrier recombination time is more than one order of magnitude lower than the effective escape lifetime, suggesting that most carriers in the quantum wells recombine, while the escape process remains weak. To ensure the reliability and robustness of the MCLM, we subject it to a comprehensive threefold validation process. This work confirms the positive impact of spreading carriers into several quantum wells through V-pit engineering. In addition, the MCLM is applicable to other LEDs with a non-uniform carrier distribution, such as micro-LEDs with significant surface recombination and non-uniform lateral carrier profiles.
42 ENGINEERING↗
REC protein family expansion by the emergence of a new signaling pathway
This report presents multi-genome evidence that REC protein family expansion occurs when the emergence of new pathways gives rise to functional discordance. Specificity between residues in REC domain containing response regulators with paired histidine kinases is under negative purifying selection, constrained by the presence of other bacterial two-component systems signaling cascades that share sequence and structural identity. Presuming that the two-component systems can evolve by neutral amino acid changes (neutral drift) when purifying evolutionary constraints are relaxed, how might the REC protein family expand by amino acid changes when these constraints remain intact? Using an unsupervised machine learning approach to observe the sequence landscape of REC domains across long phylogenetic distances, we find that within-gene recombination, a subcategory of gene conversion, switched the effector domain and, consequently, the regulatory context of a duplicated response regulator from transcriptional regulation by σ54 to that by σ70. We determined that the recombined response regulator diverged from its parent by episodic diversifying selection and neutral drift. Functional experiments of the parent of recombined response regulators in a model Pseudomonas putida KT2440 model system revealed that the parent and recombined response regulators sense and respond to different carboxylic acids. Finally, a residue-switching experiment using structural predictions and functional characterization suggests that the new residues in the recombined regulator could form a new interaction interface and mediate condition-specific phosphotransfer. Overall, our study finds that genetic perturbations can create conditions of functional discordance, whereby the REC protein family can evolve by episodic diversifying selection.
59 BASIC BIOLOGICAL SCIENCES↗
Band Structure-Driven Design of a α-CsPbI 3 Ammonia Sensor for Industrial Applications
We investigate the defect-dependent electronic structure and gas-sensing potential of cubic α-CsPbI 3 using first-principles density functional theory and nonadiabatic molecular dynamics. Among the intrinsic defects, interstitials, vacancies, antisites, and switches studied, the I Pb and Pb I antisite defects exhibit transition energy levels near the middle of the band gap, thus functioning as deep traps. Short-term adsorption of ammonia selectively modifies the electronic structure, coordinating with Pb at Pb I sites and Cs at I Pb sites, significantly altering recombination pathways. Detailed analysis reveals that NH 3 reduces anharmonicity at I Pb defects, enabling enhanced recombination at elevated temperatures, while trap-assisted recombination dominates at room temperature. Other analytes, including CH 3 NH 2 and NO 2 , show negligible impact on the band gap or recombination dynamics, highlighting the potential selectivity of NH 3 interactions. Ab initio nonadiabatic molecular dynamics simulations at 300 K and 600 K further demonstrate temperature-dependent modulation of carrier lifetimes, with NH 3 accelerating recombination at ambient conditions and suppressing certain pathways at higher temperatures. These findings suggest that α-CsPbI 3 can serve as a selective and sensitive ammonia sensor over a broad temperature range and offer insights for ammonia detection under industrially relevant conditions.
ammonia sensor↗