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Results for “Radiative recombination”
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Efficiency of GaAs sub 1-x P sub x electroluminescent diodes.
Electroluminescent diodes emission efficiency factor for application to lasers
Effect of dopants on annealing performance of silicon solar cells
The optimum annealing parameters of time and temperature for producing cell output recovery were established. Devices made from gallium doped and boron doped silicon were investigated. The cells ranged in resistivity from 0.1 to 20 ohm-cm and in thickness from 50 to 250 micrometers. The observations can be explained in a qualitative manner by postulating a pair of competing mechanisms to account for the low temperature reverse annealing seen in most boron and gallium doped silicon solar cells. Still another mechanism dominates at higher temperatures (350 C and greater) to complete this model. One of the mechanisms, defined as B, allows migrators to couple with radiation induced recombination sites thus increasing or enhancing their capture cross sections. This would tend to reduce minority carrier diffusion length. The new recombination complex is postulated to be thermally stable up to temperatures of approximately 350 C.
Probing me Reverse Shock in an Oxygen-Rich Supernova Remnant
The aim of this project is to examine the O VI emission at three positions around the X- ray bright ring of the remnant in order to investigate the relation between the O VI emission, the X-ray O VII and O VIII emission, and the optical [OIII} emission, and how these vary around the rim of the remnant. All three pointings and the background pointing have now been observed; the archive notification for the most recent dataset was Oct 30, 2003. After reprocessing and screening, the net exposure time for the SE exposure is only 54 percent of the approved time (15 kilosec). for the SE exposure, the available statistics are not good enough for analysis. A request for reobservation to make up for the lost time in the SE pointing has been approved. Broad O VI 1032 and O VI 1038 emission is detected with velocity width of at least 800 km/s, and possibly exceeding 1000 km/s. The Flanagan et al. analysis of the Chandra grating data show bulk velocities in the X-ray gas of order +/- 1000 km/s. In the region of the FUSE E0lO2-SE pointing, the Chandra data indicate both blue-shifted and red-shifted emission. Analysis of the velocity structure of the O VI emission will provide additional constraints on the kinematics of the gas: is it emission from a tilted expanding barrel, or a more symmetric expansion? The O VI fluxes are also needed to assess whether the O VI is radiation from recombining O VII or instead fiom cooler gas ionizing toward O VII. The emission is faint, however, which complicates the analysis. Because the lines are so broad, absorption by intervening H2, CII, and foreground OVI must be considered. A number of stars in the SMC have been observed which provide information on foreground OVI absorption. The initial analyses have concentrated on the Li1F channel since the guidance is based on that channel. The Li2F channel is being examined exposure by exposure to see if any of the data can be used to improve the signal to noise in the Li1F data.
Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots
The photoluminescence emission from InGaAs/GaAs quantum-well and quantum-dot (QD) structures are compared after controlled irradiation with 1.5 MeV proton fluxes. Results presented here show a significant enhancement in radiation tolerance with three-dimensional quantum confinement.
Identification of Recombination Losses in CdSe/CdTe Solar Cells from Spectroscopic and Microscopic Time-Resolved Photoluminescence
Due to the lowest-cost and best reliability, CdTe solar cells are the leading thin-film photovoltaic technology. Increasing open-circuit voltage by reducing recombination represents the most promising path toward further improvements. Analysis is needed to identify limitations that cause efficiency losses. To achieve this goal for Cu-doped CdSe/CdTe solar cells, time-resolved spectroscopy and microscopy are developed and applied. Recombination lifetimes and radiative efficiency identify that defect-mediated recombination is the dominant voltage loss mechanism. When carrier lifetimes are averaged over many crystalline grains, they increase from 180 to 430 ns when Al2O3 is applied to the back contact. The quasi-Fermi-level splitting correspondingly increases from 880–905 to 906–931 mV, indicating a pathway to overcome the long-standing 900 mV voltage limitation. However, the dominant recombination losses are attributed to the absorber bulk. From microscopic carrier lifetime measurements, it is identified that space charge fields due to charged grain boundaries (GBs) lead to recombination in the CdTe absorber bulk. At high injection, GB space charge fields are screened, but that occurs above 1 Sun excitation conditions. Alloying with selenium in the near-interface CdSeTe absorber region reduces GB losses and is identified as one of the factors leading to high radiative and power conversion efficiency.
An experimental investigation of radiation effects in semiconductors Semiannual status report, 1 Jan. - 30 Jun. 1967
Radiation effects on semiconductors, and recombination lifetimes in gamma-irradiated, boron-doped silicon
Radiation-resilient InAs quantum dot lasers
Displacement damage from particle radiation increases the threshold current of semiconductor lasers, impeding the deployment of photonic systems in harsh radiation environments. Replacing conventional quantum well (QW) gain regions with quantum dots (QDs) has been shown to suppress the radiation-induced increase in threshold current owing to three-dimensional carrier confinement, which effectively segregates charge carriers away from radiation-induced defects. However, radiation-induced change in threshold current is also affected by extrinsic design elements of a laser, such as photon lifetime, and therefore provides only a partial assessment of the radiation hardness. In this work, we advance the understanding of the radiation resiliency of InAs QD lasers by extracting the change in the nonradiative recombination rate after radiation exposure, which provides a more fundamental assessment of the intrinsic radiation hardness of InAs QD gain regions. We find that carriers that populate InAs QD states have a nonradiative recombination rate that is over an order-of-magnitude less sensitive to neutron radiation relative to carriers in InGaAsP QWs. InAs QD lasers must be designed such that carriers primarily occupy QD states, preventing carrier spillover into surrounding barrier layers to obtain the maximum benefit. Furthermore, we show that enhanced radiation hardness is observed in InAs QD lasers grown on both highly lattice-mismatched silicon substrates and native GaAs substrates, further broadening the appeal of InAs QD lasers as reliable light sources for photonic systems operating in harsh radiation environments.
Nanoprecipitates to Enhance Radiation Tolerance in High-Entropy Alloys
The growth of advanced energy technologies for power generation is enabled by the design, development, and integration of structural materials that can withstand extreme environments, such as high temperatures, radiation damage, and corrosion. High-entropy alloys (HEAs) are a class of structural materials in which suitable chemical elements in four or more numbers are mixed to typically produce single-phase concentrated solid solution alloys (CSAs). Many of these alloys exhibit good radiation tolerance like limited void swelling and hardening up to relatively medium radiation doses (tens of displacements per atom (dpa)); however, at higher radiation damage levels (>50 dpa), some HEAs suffer from considerable void swelling limiting their near-term acceptance for advanced nuclear reactor concepts. In this study, we developed a HEA containing a high density of Cu-rich nanoprecipitates distributed in the HEA matrix. The Cu-added HEA, NiCoFeCrCu 0.12 , shows excellent void swelling resistance and negligible radiation-induced hardening upon irradiation up to high radiation doses (i.e., higher than 100 dpa). The void swelling resistance of the alloy is measured to be significantly better than NiCoFeCr CSA and austenitic stainless steels. Density functional theory simulations predict lower vacancy and interstitial formation energies at the coherent interfaces between Cu-rich nanoprecipitates and the HEA matrix. The alloy maintained a high sink strength achieved via nanoprecipitates and the coherent interface with the matrix at a high radiation dose (~50 dpa). From our experiments and simulations, the effective recombination of radiation-produced vacancies and interstitials at the coherent interfaces of the nanoprecipitates is suggested to be the critical mechanism responsible for the radiation tolerance of the alloy. Furthermore, the materials design strategy based on incorporating a high density of interfaces can be applied to high-entropy alloy systems to improve their radiation tolerance.
Slip conditions with wall catalysis and radiation for multicomponent, nonequilibrium gas flow
The slip conditions for a multicomponent mixture with diffusion, wall-catalyzed atom recombination and thermal radiation are derived, and simplified expressions for engineering applications are presented. The gas mixture may be in chemical nonequilibrium with finite-rate catalytic recombination occurring on the wall. These boundary conditions, which are used for rarefied flow regime flow field calculations, are shown to be necessary for accurate predictions of skin friction and heat transfer coefficients in the rarefied portion of the space shuttle trajectory.
Intensity of sun's shortwave radiation and rate of ionization and recombination processes in the ionosphere <intensivnost' korotkovolnobogo izlucheniya solntsa i skorost' protsessov ionizatsii i rekombinatsii v ionosfere<
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Temperature and ionization balance dependence of O VII line ratios
The forbidden-plus-intersystem to resonance line ratio (G) for the heliumlike ion O VII is calculated, taking into account cascades, blended satellite lines, and radiative plus dielectric recombination. It is noted that G is of particular use for investigating radiative-transfer effects and nonequilibrium ionization in the solar corona and that the calculations are applicable to a low-density optically thin Maxwellian plasma. The temperature dependence of G is considered for the case of a steady-state equilibrium plasma, and the effect of departures from ionization equilibrium on G is examined. It is found that G is quite insensitive to temperature over the range from 600,000 to 6 million K for a steady-state plasma, but that recombinations may be suppressed or dominant, depending on the relative abundance of O VIII, for a plasma in which the state of ionization is not in equilibrium with the electron temperature. This latter effect is shown to be capable of causing large variations in G that are dependent on electron temperature.
Recombination rate analysis in long minority carrier lifetime mid-wave infrared InGaAs/InAsSb superlattices
Gallium is incorporated into the strain-balanced In(Ga)As/InAsSb superlattice system to achieve the same mid-wave infrared cutoff tunability as conventional Ga-free InAs/InAsSb type-II superlattices, but with an additional degree of design freedom to enable optimization of absorption and transport properties. Time-resolved photoluminescence measurements of InGaAs/InAsSb superlattice characterization- and doped device structures are reported from 77 to 300 K and compared to InAs/InAsSb. The low-injection photoluminescence decay yields the minority carrier lifetime, which is analyzed with a recombination rate model, enabling the determination of the temperature-dependent Shockley–Read–Hall, radiative, and Auger recombination lifetimes and extraction of defect energy levels and capture cross section defect concentration products. The Shockley–Read–Hall-limited lifetime of undoped InGaAs/InAsSb is marginally reduced from 2.3 to 1.4 μs due to the inclusion of Ga; however, given that Ga improves the vertical hole mobility by a factor of >10×, a diffusion-limited InGaAs/InAsSb superlattice nBn could expect a lower bound of 2.5× improvement in diffusion length with significant impact on photodetector quantum efficiency and radiation hardness. At temperatures below 120 K, the doped device structures are Shockley–Read–Hall limited at 0.5 μs, which shows promise for detector applications.
An experimental investigation of radiation effects in semiconductors Semiannual status report, 1 Jan. - 30 Jun. 1966
Radiation effect on recombination luminescence and tunneling in semiconductors
The EUV Helium Spectrum in the Quiet Sun: A By-Product of Coronal Emission?
In this paper we test one of the mechanisms proposed to explain the intensities and other observed properties of the solar helium spectrum, and in particular of its Extreme-Ultraviolet (EUV) resonance lines. The so-called Photoionisation-Recombination (P-R) mechanism involves photoionisation of helium atoms and ions by EUV coronal radiation, followed by recombination cascades. We present calibrated measurements of EUV flux obtained with the two CDS spectrometers on board SOHO, in quiescent solar regions. We were able to obtain an essentially complete estimate of the total photoionizing flux in the wavelength range below 504 A (the photoionisation threshold for He(I)), as well as simultaneous measurements with the same instruments of the intensities of the strongest EUV helium lines: He(II) lambda304, He(I) lambda584, and He(I) lambda537. We find that there are not enough EUV photons to account for the observed helium line intensities. More specifically, we conclude that He(II) intensities cannot be explained by the P-R mechanism. Our results, however, leave open the possibility that the He(I) spectrum could be formed by the P-R mechanism, with the He(II) lambda304 line as a significant photoionizating source.
The influence of autoionization accompanied by excitation on the dielectronic recombination and the ionization equilibrium of silicon ions
The dielectronic recombination rate coefficients have been calculated for the various ionization stages of silicon. Account has been taken of all stabilizing radiative transitions and all autoionization processes which involve a single-electron electric-dipole transition of the recombining ion core. For certain ions the dielectronic recombination rates, although still larger than the direct radiative recombination rates, are found to be substantially reduced when account is taken of the effects of a previously neglected autoionization process in which the excited recombining ion core undergoes a delta n = 0 transition to a lower excited state. The temperatures at which these ions have their maximum abundance in corona equilibrium are significantly reduced when use is made of the new dielectronic recombination rates. Calculations are also presented for the total rates of radiative energy loss from isothermal steady-state plasmas due to the line and continuum emission of silicon ions.
RADIATION DAMAGE TO SILICON
Recombination, trapping & electron spin resonance in normal and irradiated silicon
Variations of light emission and carrier dynamics around V-defects in InGaN quantum wells
Time- and spectrally-resolved scanning near-field optical microscopy was applied to study spatial variations of photoluminescence (PL) spectra and carrier dynamics in polar InGaN/GaN single quantum wells (QWs) emitting from 410 nm to 570 nm. The main attention was devoted to variations of PL properties and carrier dynamics around V-defects. The PL intensity, peak wavelength, and linewidth, as well as the radiative and nonradiative recombination times, were found to be different in V-defect-rich and defect-free regions. The radiative lifetime close to the defects was longer up to several times, which is attributed to an increased electron and hole wave function separation in the QW plane. PL decay times, measured using excitation and collection through the near-field probe, were one to two orders of magnitude shorter than PL decay times measured in the far field. This shows that the near-field PL decay and the integrated PL intensity are primarily determined by the carrier out-diffusion from under the probe. Only in the immediate vicinity of the V-defects, the near-field PL decays due to the nonradiative recombination at dislocations. The area of such enhanced nonradiative recombination is limited to just a few percent of the total QW area. This shows that recombination via dislocations and V-defects does not play a decisive role in the overall nonradiative recombination and internal quantum efficiency of polar InGaN/GaN QWs.