Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “Microstrip”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
NASA NTRS1978

Thin conformal antenna array for microwave power conversions

A structure of a circularly polarized, thin conformal, antenna array which may be mounted integrally with the skin of an aircraft employs microstrip elliptical elements and interconnecting feed lines spaced from a circuit ground plane by a thin dielectric layer. The feed lines are impedance matched to the elliptical antenna elements by selecting a proper feedpoint inside the periphery of the elliptical antenna elements. Diodes connected between the feed lines and the ground plane rectify the microwave power, and microstrip filters (low pass) connected in series with the feed lines provide dc current to a microstrip bus. Low impedance matching strips are included between the elliptical elements and the rectifying and filtering elements.

Dickinson, R. M.↗
NASA NTRS1990

Coplanar-waveguide/microstrip probe coupler and applications to antennas

A method to couple microwave power from a coplanar waveguide to a microstrip line on opposite sides of a ground plane is demonstrated. The coupler uses a metallic post which passes through an aperture on the ground plane connecting the strip conductor of the coplanar waveguide to the microstrip line. The measured insertion loss and return loss are about 1 dB and 10 dB, respectively, across the frequency range of 0.045-6.5 GHz. To demonstrate potential applications of the coupler as a feeding network for a microstrip patch array, measured radiation patterns of two rectangular patch antennas with a direct coplanar-waveguide/microstrip feed and with a proximity coupled coplanar-waveguide/microstrip feed are presented.

Simons, R. N.↗
NASA NTRS1992

Coplanar Waveguide Aperture Coupled Patch Antennas with Ground Plane/Substrate of Finite Extent

Coplanar waveguide (CPW)/aperture coupled microstrip patch antennas constructed with ground coplanar waveguide (GCPW), finite coplanar waveguide (FCPW) and channelized coplanar waveguide (CCPW) are demonstrated. The measured characteristics show that the CCPW/aperture coupled microstrip patch antenna has the largest bandwidth, whereas the GCPW/aperture coupled microstrip patch antenna has the best front-to-back ratio.

Simons, R. N.↗
NASA NTRS2000

Current Status of Thin Film (Ba,Sr)TiO3 Tunable Microwave Components for RF Communications

The performance of proof-of-concept ferroelectric microwave devices has been moving steadily closer to the level needed for satellite and other rf communications applications. This paper will review recent progress at NASA Glenn in developing thin film Ba(x)Sr(1-x)TiO3 tunable micro-wave components for these applications. Phase shifters for phased array antennas, tunable filters and tunable oscillators employing microstrip and coupled microstrip configurations will be presented. Tunabilities, maximum dielectric constants, and phase shifter parameters will be discussed (e.g., coupled microstrip phase shifters with phase shift over 200 deg at 18 GHz and a figure of merit of 74.3 deg/dB). Issues of post-annealing, Mn-doping and Ba(x)Sr(1-x) TiO3 growth on sapphire and alumina substrates will be covered. The challenges of incorporating these devices into larger systems, such as yield, variability in phase shift and insertion loss, and protective coatings will also be addressed.

VanKeuls, F. W.↗
NASA NTRS2000

Current Status of Thin Film (Ba,Sr) TiO3 Tunable Microwave Components for RF Communications

The performance of proof-of-concept ferroelectric microwave devices has been moving steadily closer to the level needed for satellite and other rf communications applications. This paper will review recent progress at NASA Glenn in developing thin film Ba(x)Sr(1-x)TiO3 tunable microwave components for these applications. Phase shifters for phased array antennas, tunable filters and tunable oscillators employing microstrip and coupled microstrip configurations will be presented. Tunabilities, maximum dielectric constants, and phase shifter parameters will be discussed (e.g., coupled microstrip phase shifters with phase shift over 200 deg. at 18 GHz and a figure of merit of 74.3 deg./dB). Issues of postannealing, Mn-doping and Ba(x)Sr(1-x)TiO3 growth on sapphire and alumina substrates will be covered. The challenges of incorporating these devices into larger systems, such as yield, variability in phase shift and insertion loss, and protective coatings will also be addressed.

VanKeuls, F. W.↗
NASA NTRS2000

Correlation of Electric Field and Critical Design Parameters for Ferroelectric Tunable Microwave Filters

The correlation of electric field and critical design parameters such as the insertion loss, frequency ability return loss, and bandwidth of conductor/ferroelectric/dielectric microstrip tunable K-band microwave filters is discussed in this work. This work is based primarily on barium strontium titanate (BSTO) ferroelectric thin film based tunable microstrip filters for room temperature applications. Two new parameters which we believe will simplify the evaluation of ferroelectric thin films for tunable microwave filters, are defined. The first of these, called the sensitivity parameter, is defined as the incremental change in center frequency with incremental change in maximum applied electric field (EPEAK) in the filter. The other, the loss parameter, is defined as the incremental or decremental change in insertion loss of the filter with incremental change in maximum applied electric field. At room temperature, the Au/BSTO/LAO microstrip filters exhibited a sensitivity parameter value between 15 and 5 MHz/cm/kV. The loss parameter varied for different bias configurations used for electrically tuning the filter. The loss parameter varied from 0.05 to 0.01 dB/cm/kV at room temperature.

Subramanyam, Guru↗
NASA NTRS2003

Performance Enhancement of Tunable Bandpass Filters Using Selective Etched Ferroelectric Thin Films

The inclusion of voltage-tunable barium strontium titanate (BSTO) thin films into planar band pass filters offers tremendous potential to increase their versatility. The ability to tune the passband so as to correct for minor deviations in manufacturing tolerances, or to completely reconfigure the operating frequencies of a microwave communication system, are highly sought-after goals. However, use of ferroelectric films in these devices results in higher dielectric losses, which in turn increase the insertion loss and decrease the quality factors of the filters. This study explores the use of patterned ferroelectric layers to minimize dielectric losses without degrading tunability. Patterning the ferroelectric layers enables us to constrict the width of the ferroelectric layers between the coupled microstrip lines, and minimize losses due to ferroelectric layers. Coupled one-pole microstrip bandpass filters with fundamental resonances at approx. 7.2 GHz and well defined harmonic resonances at approx. 14.4 and approx. 21.6 GHz, were designed, simulated and tested. For one of the filters, experimental results verified that its center frequency was tunable by 528 MHz at a center frequency of 21.957 GHz, with insertion losses varying from 4.3 to 2.5 dB, at 0 and 3.5 V/micron, respectively. These data demonstrate that the tuning-to-loss figure of merit of tunable microstrip filters can be greatly improved using patterned ferroelectric thin films as the tuning element, and tuning can be controlled by engineering the ferroelectric constriction in the coupled sections.

Miranda, Felix A.↗
NASA NTRS2007

Microrectenna: A Terahertz Antenna and Rectifier on a Chip

A microrectenna that would operate at a frequency of 2.5 THz has been designed and partially fabricated. The circuit is intended to be a prototype of an extremely compact device that could be used to convert radio-beamed power to DC to drive microdevices (see Figure 1). The microrectenna (see Figure 2) circuit consists of an antenna, a diode rectifier and a DC output port. The antenna consists of a twin slot array in a conducting ground plane (denoted the antenna ground plane) over an enclosed quarter-wavelength-thick resonant cavity (denoted the reflecting ground plane). The circuit also contains a planar high-frequency low-parasitic Schottky-barrier diode, a low-impedance microstrip transmission line, capacitors, and contact beam leads. The entire 3-D circuit is fabricated monolithically from a single GaAs wafer. The resonant cavity renders the slot radiation pattern unidirectional with a half-power beam width of about 65. A unique metal mesh on the rear of the wafer forms the backplate for the cavity but allows the GaAs to be wet etched from the rear surface of the twin slot antennas and ground plane. The beam leads protrude past the edge of the chip and are used both to mount the microrectenna and to make the DC electrical connection with external circuitry. The antenna ground plane and the components on top of it are formed on a 2- m thick GaAs membrane that is grown in the initial wafer MBE (molecular beam epitaxy) process. The side walls of the antenna cavity are not metal coated and, hence, would cause some loss of power; however, the relatively high permittivity (epsilon=13) of the GaAs keeps the cavity modes well confined, without the usual surface-wave losses associated with thick dielectric substrates. The Schottky-barrier diode has the usual submicron dimensions associated with THz operation and is formed in a mesa process above the antenna ground plane. The diode is connected at the midpoint of a microstrip transmission line, which is formed on 1- m-thick SiO (permittivity of 5) laid down on top of the GaAs membrane. The twin slots are fed in phase by this structure. To prevent radio-frequency (RF) leakage past the slot antennas, low-loss capacitors are integrated into the microstrip transmission line at the edges of the slots. The DC current- carrying lines extend from the outer edges of the capacitors, widen approaching the edges of the chip, and continue past the edges of the chip to become the beam leads used in tacking down the devices. The structure provides a self-contained RF to DC converter that works in the THz range.

Siegel, Peter↗
NASA NTRS2010

Novel Micro Strip-to-Waveguide Feed Employing a Double-Y Junction

Previous micro strip -to -waveguide transitions either required a hermetically sealed waveguide configuration, or a balun that needed to be tuned according to the frequency band of interest. In this design, the balun is realized using a double -Y junction to transition from microstrip to coplanar strip feeding a quasi-Yagi dipole array (see figure). The length of the feed (Lf) extending into the waveguide is 15.54 mm. The length of the ground plane below the ULTRALAM substrate is 7.75 mm. The lengths L1 , L2, and L3 are 8.50 mm, 4.38 mm, and 2.14 mm, respectively. These lengths were computed via a preliminary optimization aimed at improving the return loss at the band edges. The waveguide feed was designed to excite the TE10 mode in a WR-90 waveguide, and to operate over the recommended frequencies of 8.2 to 12.4 GHz. The feed employs a Rogers 6010 substrate (dielectric constant Er approx. equals 10.2) bonded with a Rogers ULTRALAM substrate (Er approx. equals 2.5). The ULTRALAM substrate serves to provide mechanical strength for 6010 substrate, and to mitigate loses due to parasitic modes (the ground plane is etched on the bottom of this layer due to the topology of the double -Y balun). The double-Y balun transitioning from an unbalanced microstrip line to a balanced coplanar strip (CPS) line does not provide inherent impedance transformation; hence, Klopfenstein impedance tapers were synthesized to transition from 50 to 77 Ohms in the microstrip section and from 77 to 110 Ohms in the CPS section. At the balun junction, the CPS stub lengths were chosen such that the X/ 8 resonance is pushed outside the bandwidth of operation. Also, the smallest allowable conductor width and gap spacing were chosen to meet acceptable manufacturing tolerances.

Venkatesan, Jaikrishina↗
NASA NTRS2005

X-Band, 17-Watt Solid-State Power Amplifier

An advanced solid-state power amplifier that can generate an output power of as much as 17 W at a design operating frequency of 8.4 GHz has been designed and constructed as a smaller, lighter, less expensive alternative to traveling-wave-tube X-band amplifiers and to prior solid-state X-band power amplifiers of equivalent output power. This amplifier comprises a monolithic microwave integrated circuit (MMIC) amplifier module and a power-converter module integrated into a compact package (see Figure 1). The amplifier module contains an input variable-gain amplifier (VGA), an intermediate driver stage, a final power stage, and input and output power monitors (see Figure 2). The VGA and the driver amplifier are 0.5-m GaAs-based metal semiconductor field-effect transistors (MESFETs). The final power stage contains four parallel high-efficiency, GaAs-based pseudomorphic high-electron-mobility transistors (PHEMTs). The gain of the VGA is voltage-variable over a range of 10 to 24 dB. To provide for temperature compensation of the overall amplifier gain, the gain-control voltage is generated by an operational-amplifier circuit that includes a resistor/thermistor temperature-sensing network. The driver amplifier provides a gain of 14 dB to an output power of 27 dBm to drive the four parallel output PHEMTs, each of which is nominally capable of putting out as much as 5 W. The driver output is sent to the input terminals of the four parallel PHEMTs through microstrip power dividers; the outputs of these PHEMTs are combined by microstrip power combiners (which are similar to the microstrip power dividers) to obtain the final output power of 17 W.

Mittskus, Anthony↗
NASA NTRS2012

Design and Performance of Micro-Spec, an Ultra Compact High-Sensitivity Far-Infrared Spectrometer for SPICA

Micro-Spec (u-Spec) is a high-performance spectrometer working in the 250-700-micrometer wavelength range, whose modules use low-loss superconducting microstrip transmission lines on a single 4-inch-diameter silicon wafer. Creating the required phase delays in transmission lines rather than free space allows such an instrument to have, in principle, the performance of a meter-scale grating spectrometer. Such a dramatic size reduction enables classes of instruments for space that would be impossible with conventional technologies. This technology can dramatically enhance the long-wavelength capability of the space infrared telescope for cosmology and astrophysics SPICA. u-Spec is analogous to a grating spectrometer. The phase retardation generated by the reflection from the grating grooves is instead produced by propagation through a transmission line. The power received by a broadband antenna is progressively divided by binary microstrip power dividers, and the required phase delays are generated by different lengths of microstrip transmission lines. by arranging these outputs along a circular focal surface, the analog of a Rowland spectrometer can he created. The procedure to optimize the Micro-Spec design is based on the stigmatization and minimization of the light path function in a two-dimensional hounded region, which results in an optimized geometry arrangement with three stigmatic points. In addition, in order to optimize the overall efficiency of the instrument, the emitters are directed to the center of the focal surface. The electric field amplitude and phase as well as the power transmitted and absorbed throughout the region are analyzed. Measurements are planned in late summer to validate the designs.

Cataldo, Giuseppe↗
NASA NTRS2012

Fabrication of Microstripline Wiring for Large Format Transition Edge Sensor Arrays

We have developed a process to integrate microstripline wiring with transition edge sensors (TES). The process includes additional layers for metal-etch stop and dielectric adhesion to enable recovery of parameters achieved in non-microstrip pixel designs. We report on device parameters in close-packed TES arrays achieved with the microstrip process including R(sub n), G, and T(sub c) uniformity. Further, we investigate limits of this method of producing high-density, microstrip wiring including critical current to determine the ultimate scalability of TES arrays with two layers of wiring.

Chervenak, James A.↗
NASA NTRS2014

Deployable Fresnel Rings

Deployable Fresnel rings (DFRs) significantly enhance the realizable gain of an antenna. This innovation is intended to be used in combination with another antenna element, as the DFR itself acts as a focusing or microwave lens element for a primary antenna. This method is completely passive, and is also completely wireless in that it requires neither a cable, nor a connector from the antenna port of the primary antenna to the DFR. The technology improves upon the previous NASA technology called a Tri-Sector Deployable Array Antenna in at least three critical aspects. In contrast to the previous technology, this innovation requires no connector, cable, or other physical interface to the primary communication radio or sensor device. The achievable improvement in terms of antenna gain is significantly higher than has been achieved with the previous technology. Also, where previous embodiments of the Tri-Sector antenna have been constructed with combinations of conventional (e.g., printed circuit board) and conductive fabric materials, this innovation is realized using only conductive and non-conductive fabric (i.e., "e-textile") materials, with the possible exception of a spring-like deployment ring. Conceptually, a DFR operates by canceling the out-of-phase radiation at a plane by insertion of a conducting ring or rings of a specific size and distance from the source antenna, defined by Fresnel zones. Design of DFRs follow similar procedures to those outlined for conventional Fresnel zone rings. Gain enhancement using a single ring is verified experimentally and through computational simulation. The experimental test setup involves a microstrip patch antenna that is directly behind a single-ring DFR and is radiating towards a second microstrip patch antenna. The first patch antenna and DFR are shown. At 2.42 GHz, the DFR improves the transmit antenna gain by 8.6 dB, as shown in Figure 2, relative to the wireless link without the DFR. A figure illustrates the relative strength of power coupling between the first and second microstrip antennas with and without the DFR. Typically, a DFR is designed for use at a particular frequency; however, testing of a DFR indicated a relatively wide operational bandwidth of approximately 8.2%. Wider bandwidth operation and multi-band operation are anticipated by extending the known art of conventional Fresnel rings to the DFRs. Increasing the number of rings used to construct a DFR antenna increases the gain, with the upper bound limited often by the largest practical dimensions that can be tolerated for a given application. The maximum theoretical improvement in gain for a single ring is 9.5 dB. Experimental results are within 0.9 dB of this theoretical value. Adding rings increases gain, and theoretically, improvements of 10 to 13 dB above that of the primary antenna gain can be achieved with two- and three-ring versions.

Kennedy, Timothy F.↗
NASA NTRS2018

High/Low Temperature Contactless Radio Frequency Probes

A contactless radio frequency (RF) probe with inverted microstrip lines. The RF probe includes a microstrip associated with a device under test, and a broadside coupled inverted microstrip line configured to exchange RF signals to a network analyzer.

Jordan, Jennifer L.↗
NASA NTRS1977

Solid state Ku-band spacecraft transmitters

A transmitter is considered that consists of GaAs IMPATT and Read diodes operating in a microstrip circuit environment to provide amplification with a minimum of 63 db small signal gain and a minimum compressed gain at 5 W output of 57 db. Reported are Schottky-Read diode design and fabrication, microstrip and circulator optimization, preamplifier development, power amplifier development, dc-to-dc converter design, and integration of the breadboard transmitter modules. A four-stage power amplifier in cascade with a three-stage preamplifier had an overall gain of 56.5 db at 13.5 GHz with a power output of 4.5 W. A single-stage Read amplifier delivered 5.9 W with 4 db gain at 22% efficiency.

Wisseman, W. R.↗
NASA NTRS1979

The 2.2 GHz Surface Acoustic Wave (SAW) oscillator development Ku-band frequency source development

Two 2.2 GHz SAW oscillators using aluminum nitride on sapphire (AlN/Al2O3) delay lines were fabricated. The oscillators were electronically temperature compensated and characterized. One of the oscillators was used as the frequency reference for the Ku band source; the second oscillator is available for continued evaluation. A 15 GHz frequency source was designed and fabricated. The 15 GHz source consists of a Ku band FET oscillator which is phase locked to the frequency multiplied (X7) output of the 2.2 GHz SAW reference source. The Ku band source was built using microstrip circuit designs, which are hybrid compatible. Two wafer runs of 2.2 GHz TED devices were fabricated and evaluated. The devices were mounted on microstrip test substrates and evaluated as 15 GHz divide by 7 circuits. The device evaluation indicated that in their present form the TED is not a practical circuit element.

Source record↗
NASA NTRS1984

Monolithic microwave integrated circuit devices for active array antennas

Two different aspects of active antenna array design were investigated. The transition between monolithic microwave integrated circuits and rectangular waveguides was studied along with crosstalk in multiconductor transmission lines. The boundary value problem associated with a discontinuity in a microstrip line is formulated. This entailed, as a first step, the derivation of the propagating as well as evanescent modes of a microstrip line. The solution is derived to a simple discontinuity problem: change in width of the center strip. As for the multiconductor transmission line problem. A computer algorithm was developed for computing the crosstalk noise from the signal to the sense lines. The computation is based on the assumption that these lines are terminated in passive loads.

Mittra, R.↗
NASA NTRS1982

Low gain and steerable vehicle antennas for communications with land mobile satellite

Current development activities at JPL for ground mobile vehicle antennas to be used with the Land Mobile Satellite Service (LMSS) system are described. Both low gain and electronically steerable high gain type antennas are discussed in terms of their design concept and RF performance. For the low gain type, three classes of antennas are under various stages of development. These are the crossed-drooping dipole, quadrifilar helix, and microstrip patch designs. The antennas are intended to provide circularly-polarized radiation with a minimum of 3-dB gain in the angular region from 19 degrees to 60 deg from the horizon in elevation plane and with an omnidirectional pattern in azimuthal plane. For the electronically steerable high gain type, circularly-polarized microstrip patch phased arrays formed on a planar surface and on the surface of a truncated cone are under study. The arrays are intended to provide a minimum of 12 dB gain in the same angular region in elevation plane at all azimuthal angles. This coverage is accomplished by scanning the high gain pencil beam in both elevation and azimuthal directions. Both types of antennas are to transmit at 821-831 MHz band and to receive at 866-876 MHz band. They must be of low cost design and reasonably conformal to the vehicle.

Woo, K.↗