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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
NASA NTRS2003

High-Performance Solid-State W-Band Power Amplifiers

The figure shows one of four solid-state power amplifiers, each capable of generating an output power greater than or equal to 240 mW over one of four overlapping frequency bands from 71 to 106 GHz. (The bands are 71 to 84, 80 to 92, 88 to 99, and 89 to 106 GHz.) The amplifiers are designed for optimum performance at a temperature of 130 K. These amplifiers were developed specifically for incorporation into frequency-multiplier chains in local oscillators in a low-noise, far-infrared receiving instrument to be launched into outer space to make astrophysical observations. The designs of these amplifiers may also be of interest to designers and manufacturers of terrestrial W-band communication and radar systems. Each amplifier includes a set of six high-electron-mobility transistor (HEMT) GaAs monolithic microwave integrated-circuit (MMIC) chips, microstrip cavities, and other components packaged in a housing made from A-40 silicon-aluminum alloy. This alloy was chosen because, for the original intended spacecraft application, it offers an acceptable compromise among the partially competing requirements for high thermal conductivity, low mass, and low thermal expansion. Problems that were solved in designing the amplifiers included designing connectors and packages to fit the available space; designing microstrip signal-power splitters and combiners; matching of impedances across the frequency bands; matching of the electrical characteristics of those chips installed in parallel power-combining arms; control and levelling of output power across the bands; and designing the MMICs, microstrips, and microstrip cavities to suppress tendencies toward oscillation in several modes, both inside and outside the desired frequency bands.

Gaier, Todd↗
NASA NTRS2011

Cryogenic 160-GHz MMIC Heterodyne Receiver Module

A cryogenic 160-GHz MMIC heterodyne receiver module has demonstrated a system noise temperature of 100 K or less at 166 GHz. This module builds upon work previously described in Development of a 150-GHz MMIC Module Prototype for Large-Scale CMB Radiation (NPO-47664), NASA Tech Briefs, Vol. 35, No. 8 (August 2011), p. 27. In the original module, the local oscillator signal was saturating the MMIC low-noise amplifiers (LNAs) with power. In order to suppress the local oscillator signal from reaching the MMIC LNAs, the W-band (75 110 GHz) signal had to be filtered out before reaching 140 170 GHz. A bandpass filter was developed to cover 120 170 GHz, using microstrip parallel-coupled lines to achieve the desired filter bandwidth, and ensure that the unwanted W-band local oscillator signal would be sufficiently suppressed. With the new bandpass filter, the entire receiver can work over the 140 180-GHz band, with a minimum system noise temperature of 460 K at 166 GHz. The module was tested cryogenically at 20 K ambient temperature, and it was found that the receiver had a noise temperature of 100 K over an 8-GHz bandwidth. The receiver module now includes a microstrip bandpass filter, which was designed to have a 3-dB bandwidth of approximately 120-170 GHz. The filter was fabricated on a 3-mil-thick alumina substrate. The filter design was based on a W-band filter design made at JPL and used in the QUIET (Q/U Imaging ExperimenT) radiometer modules. The W-band filter was scaled for a new center frequency of 150 GHz, and the microstrip segments were changed accordingly. Also, to decrease the bandwidth of the resulting scaled design, the center gaps between the microstrip lines were increased (by four micrometers in length) compared to the gaps near the edges. The use of the 150-GHz bandpass filter has enabled the receiver module to function well at room temperature. The system noise temperature was measured to be less than 600 K (at room temperature) from 154 to 168 GHz. Additionally, the use of a W-band isolator between the receiver module and the local oscillator source also improved the noise temperature substantially. This may be because the mixer was presented with a better impedance match with the use of the isolator. Cryogenic testing indicates a system noise temperature of 100 K or less at 166 GHz. Prior tests of the MMIC amplifiers alone have resulted in a system noise temperature of 65.70 K in the same frequency range (.160 GHz) when cooled to an ambient temperature of 20 K. While other detector systems may be slightly more sensitive (such as SIS mixers), they require more cooling (to 4 K ambient) and are not as easily scalable to build a large array, due to the need for large magnets and other equipment. When cooled to 20 K, this receiver module achieves approximately 100 K system noise temperature, which is slightly higher than single-amplifier module results obtained at JPL (65.70 K when an amplifier is corrected for back-end noise contributions). If this performance can be realized in practice, and a scalable array can be produced, the impact on cosmic microwave background experiments, astronomical and Earth spectroscopy, interferometry, and radio astronomy in general will be dramatic.

Samoska, Lorene A.↗
NASA NTRS2016

Symmetric Absorber-Coupled Far-Infrared Microwave Kinetic Inductance Detector

The present invention relates to a symmetric absorber-coupled far-infrared microwave kinetic inductance detector including: a membrane having an absorber disposed thereon in a symmetric cross bar pattern; and a microstrip including a plurality of conductor microstrip lines disposed along all edges of the membrane, and separated from a ground plane by the membrane. The conducting microstrip lines are made from niobium, and the pattern is made from a superconducting material with a transition temperature below niobium, including one of aluminum, titanium nitride, or molybdenum nitride. The pattern is disposed on both a top and a bottom of the membrane, and creates a parallel-plate coupled transmission line on the membrane that acts as a half-wavelength resonator at readout frequencies. The parallel-plate coupled transmission line and the conductor microstrip lines form a stepped impedance resonator. The pattern provides identical power absorption for both horizontal and vertical polarization signals.

U-yen, Kongpop↗
NASA NTRS2018

Planar Via-Less Crossover Having Coplanar Waveguide Configurations and Stub Layers

A via-less crossover for use in broadband microwave/mm-wave circuitry, including: a dielectric substrate; a top layer disposed on one side of the substrate and including a microstrip line with an input and an output, two tapered sections placed around the microstrip line along a co-planar waveguide (CPW) central line, one microstrip portion having an input and which connects to one top layer, rectangular stub disposed adjacent to one of the tapered sections, and another microstrip portion having an output and which connects to another top layer, rectangular stub disposed adjacent to the other of the tapered sections; and a ground layer disposed on an opposite side of the substrate and including a bottom layer CPW central line situated in a central cutout and which connects between a bottom layer, rectangular stub on one side and a bottom layer, rectangular stub on the other side situated in ground cutouts, respectively.

U-Yen, Kongpop↗
NASA NTRS2003

The development of inflatable array antennas

The deployable array antenna using an inflatable or thin-membrane structure has been identified as one of the enabling technologies to achieve low-mass, high packaging efficiency, low cost, and reliable deployment for future NASNJPL spacebome high-gain and large aperture antennas. Array antennas, when compared to parabolic reflectors, although suffering from limited bandwidth performance, offer wide-angle beam scanning capability and a more reliable flat “natural” aperture. To demonstrate the feasibility and capability of this low-mass array technology, three antenna concepts using inflatable and thin-membrane structures were initiated in 1997 at JPL and several breadboard units have been successfully developed. These three concepts are (1) the inflatable phased array, (2) the inflatable reflectarray, and (3) frame-supported thin membrane array antenna. All three concepts utilize the printed microstrip antenna technology. Although all three concepts will be briefly presented, this paper will discuss in more detail of the recent development of the second concept. The first concept of inflatable phased arrays that have been constructed are 3 to 5-meter size L-band dual-polarized synthetic aperture radar (SAR) arrays for Earth remote sensing application. They all consist of a rectangular configuration with inflatable cylindrical tubes that support and tension a multi-layer thin-membrane radiating aperture with microstrip patches and microstrip power divider lines. For the second concept, an inflatable reflectarray was developed for future deep-space telecom applications. It is a 3m Ka-band inflatable reflectarray (1.8 kg/m2). This reflectarray uses inflated torus tubes to support and tension a flat-membrane reflectarray surface. The reflectarray surface emulates a curved parabolic reflecting surface. However, because of its flat surface being a “natural surface”, it is much easier to achieve and more reliable to maintain the required surface tolerance than that of a curved parabola during long space flight. For the third concept, an L-band dual polarized SAR array with a 5m x 3m aperture and 2.5 kg/m2 of mass has recently been demonstrated. It consists of seven foldable panels each having a rectangular frame that supports a two-layer thinmembrane microstrip subarray aperture. Each frame is made of light-weight graphite composite material. The chief advantage of this deployable “frame” concept is that each frame is able to rigidly support an appropriate number of T/R modules and phase shifters to achieve the desired power distribution and beam scanning. Several technology challenges, such as the development of rigidizable inflatable tubes, a controlled deployment mechanism, thin-membrane thermal effects, a low-mass inflation system, membrane mounted T/R modules, means to counter surface tolerance issues, etc. are being investigated and will be discussed in the presentation. With foreseeable success in the development of these challenging areas, the inflatable/thin-membrane array antennas could be mature enough in a few years for actual space flight.

Lou, Michael↗
DOE OSTI2020

Reducing the Susceptibility of Lumped-Element KIDs to Two-Level System Effects

Arrays of lumped-element kinetic inductance detectors (LEKIDs) optically coupled through an antenna-coupled transmission line are a promising candidate for future cosmic microwave background experiments. However, the dielectric materials used for the microstrip architecture are known to degrade the performance of superconducting resonators. In this paper, we investigate the feasibility of microstrip coupling to a LEKID, focusing on a systematic study of the effect of depositing amorphous silicon nitride on a LEKID. The discrete and spatially separated inductive and capacitive regions of the LEKID allow us to vary the degree of dielectric coverage and determine the limitations of the microstrip coupling architecture. We show that by careful removal of dielectric from regions of high electric field in the capacitor, there is minimal degradation in dielectric loss tangent of a partially covered lumped-element resonator. We present the effects on the resonant frequency and noise power spectral density and, using the dark responsivity, provide an estimate for the resulting detector sensitivity.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Axion Dark Matter Experiment: Detailed design and operations

Axion dark matter experiment ultra-low noise haloscope technology has enabled the successful completion of two science runs (1A and 1B) that looked for dark matter axions in the 2.66–3.1 μeV mass range with Dine–Fischler–Srednicki–Zhitnisky sensitivity. Therefore, it is the most sensitive axion search experiment to date in this mass range. Here, we discuss the technological advances made in the last several years to achieve this sensitivity, which includes the implementation of components, such as the state-of-the-art quantum-noise-limited amplifiers and a dilution refrigerator. Furthermore, we demonstrate the use of a frequency tunable microstrip superconducting quantum interference device amplifier in run 1A, and a Josephson parametric amplifier in run 1B, along with novel analysis tools that characterize the system noise temperature.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2023

Measurement of Dielectric Loss in Silicon Nitride at Centimeter and Millimeter Wavelengths

This work presents a suite of measurement techniques for characterizing the dielectric loss tangent across a wide frequency range from similar to 1 GHz to 150 GHz using the same test chip. In the first method, we fit data from a microwave resonator at different temperatures to a model that captures the two-level system (TLS) response to extract and characterize both the real and imaginary components of the dielectric loss. The inverse of the internal quality factor is a second measure of the overall loss of the resonator, where TLS loss through the dielectric material is typically the dominant source. The third technique is a differential optical measurement at 150 GHz. The same antenna feeds two microstrip lines with different lengths that terminate in two microwave kinetic inductance detectors (MKIDs). The difference in the detector response is used to estimate the loss per unit length of the microstrip line. Our results suggest a larger loss for SiNx at 150 GHz of tan delta similar to 4 x 10(-3) compared to 2.0 x 10(-3) and greater than or similar to 1 x 10(-3) measured at similar to 1 GHz using the other two methods. These measurement techniques can be applied to other dielectrics by adjusting the microstrip lengths to provide enough optical efficiency contrast and other mm/sub-mm frequency ranges by tuning the antenna and feedhorn accordingly.

Dielectrics loss↗
DOE OSTI2025

Miniaturized Millimeter-Wave Multilayer Filter Design Using Additive Manufacturing

Here, this article presents an innovative, fully additive manufactured approach to millimeter-wave multilayer circuits. An aerosol jet printer is used to fabricate a multilayer stepped-impedance low-pass filter. By leveraging the second layer for miniaturization, we achieve a more compact design. By precisely controlling conductor separation and utilizing 3-D printing technology, we were able to optimize the width of the high- and low-impedance segments for optimal filter performance. Two filter types were successfully fabricated: a low-pass microstrip filter and a low-pass stripline filter, both with a cutoff frequency near 29 GHz and exhibiting acceptable stopband attenuation. The stripline configuration allows for a 36% decrease in the stripline waveguide conductor area while achieving a great passband insertion loss of just 0.62 dB, enabled by aerosol jet printing (AJP). The line loss of both designs was characterized using a microstrip through line and a stripline through line. Both designs demonstrated low overall loss, with the microstrip line exhibiting a loss of 0.26 dB/mm and the stripline having a loss of 0.37 dB/mm at 29 GHz. This work demonstrates a multilayer integration solution and offers an advantage in reducing the size of RF circuits such as filter banks for next-generation integrated RF front ends.

additive manufacturing↗
NASA NTRS1978

Thin conformal antenna array for microwave power conversions

A structure of a circularly polarized, thin conformal, antenna array which may be mounted integrally with the skin of an aircraft employs microstrip elliptical elements and interconnecting feed lines spaced from a circuit ground plane by a thin dielectric layer. The feed lines are impedance matched to the elliptical antenna elements by selecting a proper feedpoint inside the periphery of the elliptical antenna elements. Diodes connected between the feed lines and the ground plane rectify the microwave power, and microstrip filters (low pass) connected in series with the feed lines provide dc current to a microstrip bus. Low impedance matching strips are included between the elliptical elements and the rectifying and filtering elements.

Dickinson, R. M.↗
NASA NTRS1990

Coplanar-waveguide/microstrip probe coupler and applications to antennas

A method to couple microwave power from a coplanar waveguide to a microstrip line on opposite sides of a ground plane is demonstrated. The coupler uses a metallic post which passes through an aperture on the ground plane connecting the strip conductor of the coplanar waveguide to the microstrip line. The measured insertion loss and return loss are about 1 dB and 10 dB, respectively, across the frequency range of 0.045-6.5 GHz. To demonstrate potential applications of the coupler as a feeding network for a microstrip patch array, measured radiation patterns of two rectangular patch antennas with a direct coplanar-waveguide/microstrip feed and with a proximity coupled coplanar-waveguide/microstrip feed are presented.

Simons, R. N.↗
NASA NTRS1992

Coplanar Waveguide Aperture Coupled Patch Antennas with Ground Plane/Substrate of Finite Extent

Coplanar waveguide (CPW)/aperture coupled microstrip patch antennas constructed with ground coplanar waveguide (GCPW), finite coplanar waveguide (FCPW) and channelized coplanar waveguide (CCPW) are demonstrated. The measured characteristics show that the CCPW/aperture coupled microstrip patch antenna has the largest bandwidth, whereas the GCPW/aperture coupled microstrip patch antenna has the best front-to-back ratio.

Simons, R. N.↗
NASA NTRS2000

Current Status of Thin Film (Ba,Sr)TiO3 Tunable Microwave Components for RF Communications

The performance of proof-of-concept ferroelectric microwave devices has been moving steadily closer to the level needed for satellite and other rf communications applications. This paper will review recent progress at NASA Glenn in developing thin film Ba(x)Sr(1-x)TiO3 tunable micro-wave components for these applications. Phase shifters for phased array antennas, tunable filters and tunable oscillators employing microstrip and coupled microstrip configurations will be presented. Tunabilities, maximum dielectric constants, and phase shifter parameters will be discussed (e.g., coupled microstrip phase shifters with phase shift over 200 deg at 18 GHz and a figure of merit of 74.3 deg/dB). Issues of post-annealing, Mn-doping and Ba(x)Sr(1-x) TiO3 growth on sapphire and alumina substrates will be covered. The challenges of incorporating these devices into larger systems, such as yield, variability in phase shift and insertion loss, and protective coatings will also be addressed.

VanKeuls, F. W.↗
NASA NTRS2000

Current Status of Thin Film (Ba,Sr) TiO3 Tunable Microwave Components for RF Communications

The performance of proof-of-concept ferroelectric microwave devices has been moving steadily closer to the level needed for satellite and other rf communications applications. This paper will review recent progress at NASA Glenn in developing thin film Ba(x)Sr(1-x)TiO3 tunable microwave components for these applications. Phase shifters for phased array antennas, tunable filters and tunable oscillators employing microstrip and coupled microstrip configurations will be presented. Tunabilities, maximum dielectric constants, and phase shifter parameters will be discussed (e.g., coupled microstrip phase shifters with phase shift over 200 deg. at 18 GHz and a figure of merit of 74.3 deg./dB). Issues of postannealing, Mn-doping and Ba(x)Sr(1-x)TiO3 growth on sapphire and alumina substrates will be covered. The challenges of incorporating these devices into larger systems, such as yield, variability in phase shift and insertion loss, and protective coatings will also be addressed.

VanKeuls, F. W.↗
NASA NTRS2000

Correlation of Electric Field and Critical Design Parameters for Ferroelectric Tunable Microwave Filters

The correlation of electric field and critical design parameters such as the insertion loss, frequency ability return loss, and bandwidth of conductor/ferroelectric/dielectric microstrip tunable K-band microwave filters is discussed in this work. This work is based primarily on barium strontium titanate (BSTO) ferroelectric thin film based tunable microstrip filters for room temperature applications. Two new parameters which we believe will simplify the evaluation of ferroelectric thin films for tunable microwave filters, are defined. The first of these, called the sensitivity parameter, is defined as the incremental change in center frequency with incremental change in maximum applied electric field (EPEAK) in the filter. The other, the loss parameter, is defined as the incremental or decremental change in insertion loss of the filter with incremental change in maximum applied electric field. At room temperature, the Au/BSTO/LAO microstrip filters exhibited a sensitivity parameter value between 15 and 5 MHz/cm/kV. The loss parameter varied for different bias configurations used for electrically tuning the filter. The loss parameter varied from 0.05 to 0.01 dB/cm/kV at room temperature.

Subramanyam, Guru↗
NASA NTRS2003

Performance Enhancement of Tunable Bandpass Filters Using Selective Etched Ferroelectric Thin Films

The inclusion of voltage-tunable barium strontium titanate (BSTO) thin films into planar band pass filters offers tremendous potential to increase their versatility. The ability to tune the passband so as to correct for minor deviations in manufacturing tolerances, or to completely reconfigure the operating frequencies of a microwave communication system, are highly sought-after goals. However, use of ferroelectric films in these devices results in higher dielectric losses, which in turn increase the insertion loss and decrease the quality factors of the filters. This study explores the use of patterned ferroelectric layers to minimize dielectric losses without degrading tunability. Patterning the ferroelectric layers enables us to constrict the width of the ferroelectric layers between the coupled microstrip lines, and minimize losses due to ferroelectric layers. Coupled one-pole microstrip bandpass filters with fundamental resonances at approx. 7.2 GHz and well defined harmonic resonances at approx. 14.4 and approx. 21.6 GHz, were designed, simulated and tested. For one of the filters, experimental results verified that its center frequency was tunable by 528 MHz at a center frequency of 21.957 GHz, with insertion losses varying from 4.3 to 2.5 dB, at 0 and 3.5 V/micron, respectively. These data demonstrate that the tuning-to-loss figure of merit of tunable microstrip filters can be greatly improved using patterned ferroelectric thin films as the tuning element, and tuning can be controlled by engineering the ferroelectric constriction in the coupled sections.

Miranda, Felix A.↗
NASA NTRS2007

Microrectenna: A Terahertz Antenna and Rectifier on a Chip

A microrectenna that would operate at a frequency of 2.5 THz has been designed and partially fabricated. The circuit is intended to be a prototype of an extremely compact device that could be used to convert radio-beamed power to DC to drive microdevices (see Figure 1). The microrectenna (see Figure 2) circuit consists of an antenna, a diode rectifier and a DC output port. The antenna consists of a twin slot array in a conducting ground plane (denoted the antenna ground plane) over an enclosed quarter-wavelength-thick resonant cavity (denoted the reflecting ground plane). The circuit also contains a planar high-frequency low-parasitic Schottky-barrier diode, a low-impedance microstrip transmission line, capacitors, and contact beam leads. The entire 3-D circuit is fabricated monolithically from a single GaAs wafer. The resonant cavity renders the slot radiation pattern unidirectional with a half-power beam width of about 65. A unique metal mesh on the rear of the wafer forms the backplate for the cavity but allows the GaAs to be wet etched from the rear surface of the twin slot antennas and ground plane. The beam leads protrude past the edge of the chip and are used both to mount the microrectenna and to make the DC electrical connection with external circuitry. The antenna ground plane and the components on top of it are formed on a 2- m thick GaAs membrane that is grown in the initial wafer MBE (molecular beam epitaxy) process. The side walls of the antenna cavity are not metal coated and, hence, would cause some loss of power; however, the relatively high permittivity (epsilon=13) of the GaAs keeps the cavity modes well confined, without the usual surface-wave losses associated with thick dielectric substrates. The Schottky-barrier diode has the usual submicron dimensions associated with THz operation and is formed in a mesa process above the antenna ground plane. The diode is connected at the midpoint of a microstrip transmission line, which is formed on 1- m-thick SiO (permittivity of 5) laid down on top of the GaAs membrane. The twin slots are fed in phase by this structure. To prevent radio-frequency (RF) leakage past the slot antennas, low-loss capacitors are integrated into the microstrip transmission line at the edges of the slots. The DC current- carrying lines extend from the outer edges of the capacitors, widen approaching the edges of the chip, and continue past the edges of the chip to become the beam leads used in tacking down the devices. The structure provides a self-contained RF to DC converter that works in the THz range.

Siegel, Peter↗
NASA NTRS2010

Novel Micro Strip-to-Waveguide Feed Employing a Double-Y Junction

Previous micro strip -to -waveguide transitions either required a hermetically sealed waveguide configuration, or a balun that needed to be tuned according to the frequency band of interest. In this design, the balun is realized using a double -Y junction to transition from microstrip to coplanar strip feeding a quasi-Yagi dipole array (see figure). The length of the feed (Lf) extending into the waveguide is 15.54 mm. The length of the ground plane below the ULTRALAM substrate is 7.75 mm. The lengths L1 , L2, and L3 are 8.50 mm, 4.38 mm, and 2.14 mm, respectively. These lengths were computed via a preliminary optimization aimed at improving the return loss at the band edges. The waveguide feed was designed to excite the TE10 mode in a WR-90 waveguide, and to operate over the recommended frequencies of 8.2 to 12.4 GHz. The feed employs a Rogers 6010 substrate (dielectric constant Er approx. equals 10.2) bonded with a Rogers ULTRALAM substrate (Er approx. equals 2.5). The ULTRALAM substrate serves to provide mechanical strength for 6010 substrate, and to mitigate loses due to parasitic modes (the ground plane is etched on the bottom of this layer due to the topology of the double -Y balun). The double-Y balun transitioning from an unbalanced microstrip line to a balanced coplanar strip (CPS) line does not provide inherent impedance transformation; hence, Klopfenstein impedance tapers were synthesized to transition from 50 to 77 Ohms in the microstrip section and from 77 to 110 Ohms in the CPS section. At the balun junction, the CPS stub lengths were chosen such that the X/ 8 resonance is pushed outside the bandwidth of operation. Also, the smallest allowable conductor width and gap spacing were chosen to meet acceptable manufacturing tolerances.

Venkatesan, Jaikrishina↗