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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Probing phonon focusing, thermomechanical behavior, and moiré patterns in van der Waals architectures using surface acoustic waves

Surface acoustic waves (SAWs) propagate along solid-air, solid-liquid, and solid-solid interfaces. Their characteristics depend on the elastic properties of the solid. Combining transmission electron microscopy (TEM) experiments with molecular dynamics (MD) simulations, we probe atomic environments around intrinsic defects that generate SAWs in vertically stacked two-dimensional (2D) bilayers of MoS 2 . Our joint experimental-simulation study provides insights into SAW-induced structural and dynamical changes and thermomechanical responses of MoS 2 bilayers. Using MD simulations, we compute mechanical properties from the SAW velocity and thermal conductivity from thermal diffusion of SAWs. The results for Young’s modulus and thermal conductivity of an MoS 2 monolayer are in good agreement with experiments. The presence of defects, such as nanopores which generate SAWs, reduces the thermal conductivity of 2D-MoS 2 by an order of magnitude. We also observe dramatic changes in moiré patterns, phonon focusing, and cuspidal structures on 2D-MoS 2 layers.

36 MATERIALS SCIENCE↗
DOE OSTI2021

High-resolution radiation detection using Ni/SiO 2 /n-4H-SiC vertical metal-oxide-semiconductor capacitor

In this article, we demonstrate the radiation detection performance of vertical metal-oxide-semiconductor (MOS) capacitors fabricated on 20 μm thick n-4H-SiC epitaxial layers with the highest energy resolution ever reported. The 100 nm SiO2 layer was achieved on the Si face of n-4H-SiC epilayers using dry oxidation in air. The Ni/SiO2/n-4H-SiC MOS detectors not only demonstrated an excellent energy resolution of 0.42% (ΔE/E 100) for 5.48 MeV alpha particles but also caused a lower enhancement in the electronic noise components of the spectrometer compared with that observed for the best high-resolution Schottky barrier detectors. The MOS detectors also exhibited a high charge collection efficiency (CCE) of 96% at the optimized operating bias despite the presence of the oxide layer. A drift-diffusion model applied to the CCE vs gate bias voltage data revealed a minority (hole) carrier diffusion length of 24 μm. Capacitance mode deep level transient spectroscopy (C-DLTS) scans in the temperature range 84–800 K were carried out to identify the resolution limiting electrically active defects. Interestingly, the C-DLTS spectra revealed both positive and negative peaks, indicating the simultaneous presence of electron (majority) and hole (minority) trap centers. It has been inferred that at the steady-state bias for the C-DLTS measurement, the MOS detector operates in the inversion mode at certain device temperatures, causing holes to populate the minority trap centers and, hence, manifests minority carrier peaks as well.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Structurally Driven Environmental Degradation of Friction in MoS2 Films

Abstract We report an investigation of the friction mechanisms of MoS 2 thin films under changing environments and contact conditions using a variety of computational and experimental techniques. Molecular dynamics simulations were used to study the effects of water and molecular oxygen on friction and bonding of MoS 2 lamellae during initial sliding. Characterization via photoelectron emission microscopy (PEEM) and Kelvin probe force microscopy (KPFM) were used to determine work function changes in shear modified material within the top few nanometers of MoS 2 wear scars. The work function was shown to change with contact conditions and environment, and shown by density functional theory (DFT) calculations and literature reports to be correlated with lamellae size and thickness of the basally oriented surface layer. Results from nanoscale simulations and macroscale experiments suggest that the evolution of the friction behavior of MoS 2 is linked primarily to the formation or inhibition of a basally oriented, molecularly thin surface film with long-range order.

Curry, John F.↗
DOE OSTI2022

Quality Control Metrics to Assess MoS2 Sputtered Films for Tribological Applications

Abstract Pure molybdenum disulfide (MoS 2 ) solid lubricant coatings could attain densities comparable to doped films (and the associated benefits to wear rate and environmental stability) through manipulation of the microstructure via deposition parameters. Unfortunately, pure films can exhibit highly variable microstructures and mechanical properties due to processes that are not controlled during deposition (i.e., batch-to-batch variation). This work focuses on developing a relationship between density, hardness, friction, and wear for pure sputtered MoS 2 coatings. Results show that dense films ( ρ = 4.5 g/cm 3 ) exhibit a 100 × lower wear rate compared to porous coatings ( ρ = 3.04–3.55 g/cm 3 ). The tribological performance of high density pure MoS 2 coatings is shown to surpass that of established composite coatings, achieving a wear rate 2 × ( k = 5.74 × 10 –8 mm 3 /Nm) lower than composite MoS 2 /Sb 2 O 3 /Au in inert environments.

Babuska, Tomas F.↗
DOE OSTI2021

Accumulation-Type Ohmic van der Waals Contacts to Nearly Intrinsic WSe 2 Nanosheet-Based Channels: Implications for Field-Effect Transistors

We report the fabrication of ohmic van der Waals (vdW) contacts to nearly intrinsic WSe 2 nanosheet-based channels in field-effect transistors (FETs) using degenerately p-doped MoS2 (p + -MoS2) as a contact metal. We demonstrate that accumulation-type ohmic contacts and the high device performance are achievable without electrostatically gating the drain/source contact regions despite the nearly intrinsic nature of WSe 2 . Back-gated WSe 2 FETs with p + -MoS 2 bottom contacts (which screen the back-gate electric field in the drain/source regions) exhibit linear output characteristics, a high on/off ratio of 10 8 , and a high two-terminal field-effect mobility up to ~200 cm2 V –1 s –1 at room temperature. Our theoretical modeling reveals that the p + -MoS 2 /WSe 2 vdW junction behaves like a metal/semiconductor ohmic contact signified by a vanishingly thin space-charge region of ~1 nm on the p + -MoS 2 side and a substantial accumulation layer of free holes on the WSe 2 side, which is further verified by additional temperature-dependent and dual-gated measurements of WSe 2 FETs. We attribute the formation of accumulation-type ohmic contacts free of a Schottky barrier to the near absence of Fermi-level pinning at the vdW interface and the work function of p + -MoS 2 being larger than the ionization energy of WSe 2 . This study represents an important step toward achieving low-resistance ohmic contacts to two-dimensional (2D) semiconductors by eliminating the Fermi-level pinning effects, which is expected to have significant implications for next-generation 2D semiconductor-based nanoelectronics.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Chalcocarbogels as High-Capacity and Cycle-Stable Electrode Materials for Lithium and Sodium Ion Batteries

The low capacities of commercial Li ion batteries and cycle instabilities of amorphous metal sulfide based batteries impose constraints on their utilization for large-scale energy storage. We report here the acid-free, room-temperature (RT), and solution-based synthesis of a chalcogenide–carbonaceous hybrid aerogel, termed as “chalcocarbogel”, comprising molybdenum sulfide (MoS x ) and graphene oxide (GO). The chalcocarbogel is a nanoparticle-aggregated, porous, amorphous gel consisting of Mo 3 S 13 and Mo 2 S 12 -like structures as determined by synchrotron X-ray PDF, XANES, and EXAFS. The MoS x -GO chalcocarbogel demonstrates high specific capacities of ~1215 and ~807 mAh g –1 for Li/MoS x -GO and Na/MoS x -GO cells, respectively, for a 50 mAg –1 discharge rate during the first cycle. After the activation cycles, the MoS x -GO chalcocarbogel stabilizes, maintaining high specific capacities of approximately ~700 mAh g –1 for Li/MoS x -GO and ~473 mAh g –1 for Na/MoS x -GO cells, while continuously cycling. Importantly, the MoS x -GO aerogel reported here serves as a promising platform to develop chalcocarbogels for applications spanning both Li and Na ion batteries.

25 ENERGY STORAGE↗
DOE OSTI2022

Fabrication of a Microcavity Prepared by Remote Epitaxy over Monolayer Molybdenum Disulfide

We report advances in epitaxy have enabled the preparation of high-quality material architectures consisting of incommensurate components. Remote epitaxy based on lattice transparency of atomically thin graphene has been intensively studied for cost-effective advanced device manufacturing and heterostructure formation. However, remote epitaxy on nongraphene two-dimensional (2D) materials has rarely been studied even though it has a broad and immediate impact on various disciplines, such as many-body physics and the design of advanced devices. Herein, we report remote epitaxy of ZnO on monolayer MoS 2 and the realization of a whispering-gallery-mode (WGM) cavity composed of a single crystalline ZnO nanorod and monolayer MoS 2 . Cross-sectional transmission electron microscopy and first-principles calculations revealed that the nongraphene 2D material interacted with overgrown and substrate layers and also exhibited lattice transparency. The WGM cavity embedding monolayer MoS 2 showed enhanced luminescence of MoS 2 and multimodal emission.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Macroscale Superlubricity Induced by MXene/MoS 2 Nanocomposites on Rough Steel Surfaces under High Contact Stresses

Toward the goal of achieving superlubricity, or near-zero friction, in industrially relevant material systems, solution-processed multilayer Ti 3 C 2 T x -MoS 2 blends are spray-coated onto rough 52100-grade steel surfaces as a solid lubricant. The tribological performance was assessed in a ball-on-disk configuration in a unidirectional sliding mode. The test results indicate that Ti 3 C 2 T x -MoS 2 nanocomposites led to superlubricious states, which has hitherto been unreported for both individual pristine materials, MoS 2 and Ti 3 C 2 T x , under macroscale sliding conditions, indicating a synergistic mechanism enabling the superlative performance. Furthermore, the processing, structure, and property correlation were studied to understand the underlying phenomena. Raman spectroscopy, scanning electron microscopy, and transmission electron microscopy revealed the formation of an in situ robust tribolayer that was responsible for the performance at high contact pressures (>1.1 GPa) and sliding speeds (0.1 m/s). This report presents the lowest friction obtained by either MoS 2 or MXene or any combination of the two so far.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Autonomous fabrication of tailored defect structures in 2D materials using machine learning-enabled scanning transmission electron microscopy

Materials with tailored quantum properties can be engineered from atomic-scale assembly techniques, but existing methods often lack the agility and accuracy to precisely and intelligently control the manufacturing process. Here, we demonstrate a fully autonomous approach for fabricating atomic-level defects using electron beams in scanning transmission electron microscopy (STEM) that combines advanced machine learning and automated beam control. As a proof of concept, we achieved controlled fabrication of MoS-nanowire (MoS-NW) edge structures by iterative and targeted exposure of MoS 2 monolayer to a focused electron beam to selectively eject sulfur atoms, utilizing high-angle annular dark-field (HAADF) imaging for feedback-controlled monitoring of structural evolution of defects. A machine learning framework combining a random forest model and a convolutional neural network (CNN) was developed to decode the HAADF image and accurately identify atomic positions and species. This atomic-level information was then integrated into an autonomous decision-making platform, which applied predefined fabrication strategies to instruct beam control about atomic sites to be ejected. The selected sites were subsequently exposed to a localized electron beam using an FPGA-controlled scan routine with precise control over beam positioning and duration. While the MoS-NW edge structures produced exhibit promising mechanical and electronic properties, the proposed methods to build the autonomous fabrication framework is material-agnostic and can be extended to other 2D materials for the creation of diverse defect structures and heterostructures beyond Mo S2 .

Engineering↗
DOE OSTI2023

Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform

Two-dimensional (2D) materials are promising candidates for future electronics due to their excellent electrical and photonic properties. Although promising results on the wafer-scale synthesis (≤150 mm diameter) of monolayer molybdenum disulfide (MoS 2 ) have already been reported, the high-quality synthesis of 2D materials on wafers of 200 mm or larger, which are typically used in commercial silicon foundries, remains difficult. The back-end-of-line (BEOL) integration of directly grown 2D materials on silicon complementary metal–oxide–semiconductor (CMOS) circuits is also unavailable due to the high thermal budget required, which far exceeds the limits of silicon BEOL integration (<400 °C). This high temperature forces the use of challenging transfer processes, which tend to introduce defects and contamination to both the 2D materials and the BEOL circuits. Here we report a low-thermal-budget synthesis method (growth temperature < 300 °C, growth time ≤ 60 min) for monolayer MoS 2 films, which enables the 2D material to be synthesized at a temperature below the precursor decomposition temperature and grown directly on silicon CMOS circuits without requiring any transfer process. We designed a metal–organic chemical vapour deposition reactor to separate the low-temperature growth region from the high-temperature chalcogenide-precursor-decomposition region. We obtain monolayer MoS 2 with electrical uniformity on 200 mm wafers, as well as a high material quality with an electron mobility of ~35.9 cm 2 V -1 s -1 . Finally, we demonstrate a silicon-CMOS-compatible BEOL fabrication process flow for MoS 2 transistors; the performance of these silicon devices shows negligible degradation (current variation < 0.5%, threshold voltage shift < 20 mV). We believe that this is an important step towards monolithic 3D integration for future electronics.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

Nucleation and growth of molybdenum disulfide grown by thermal atomic layer deposition on metal oxides

To enable greater control over thermal atomic layer deposition (ALD) of molybdenum disulfide (MoS 2 ), here we report studies of the reactions of molybdenum hexafluoride (MoF 6 ) and hydrogen sulfide (H 2 S) with metal oxide substrates from nucleation to few-layer films. In situ quartz crystal microbalance experiments performed at 150, 200, and 250 °C revealed temperature-dependent nucleation behavior of the MoF 6 precursor, which is attributed to variations in surface hydroxyl concentration with temperature. In situ Fourier transform infrared spectroscopy coupled with ex situ x-ray photoelectron spectroscopy (XPS) indicated the presence of molybdenum oxide and molybdenum oxyfluoride species during nucleation. Density functional theory calculations additionally support the formation of these species as well as predicted metal oxide to fluoride conversion. Residual gas analysis revealed reaction by-products, and the combined experimental and computational results provided insights into proposed nucleation surface reactions. With additional ALD cycles, Fourier transform infrared spectroscopy indicated steady film growth after ~13 cycles at 200 °C. XPS revealed that higher deposition temperatures resulted in a higher fraction of MoS 2 within the films. Deposition temperature was found to play an important role in film morphology with amorphous films obtained at 200 °C and below, while layered films with vertical platelets were observed at 250 °C. Finally, these results provide an improved understanding of MoS 2 nucleation, which can guide surface preparation for the deposition of few-layer films and advance MoS 2 toward integration into device manufacturing.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Nanoscale Ferroelectric Control of Novel Electronic States in Layered Two-Dimensional Materials (Final Report)

In this DOE Early Career project “Nanoscale Ferroelectric Control of Novel Electronic States in Layered Two-Dimensional Materials,” the PI’s group has combined ferroelectric field effect with nanoscale domain imaging and writing to design the electronic and optical properties of two-dimensional (2D) van der Waals materials, including graphene and transition metal dichalcogenides MoS2 and ReS2. The van der Waals materials have been prepared into field effect transistor (FET) devices with ferroelectric gates. Through domain patterning in a ferroelectric polymer PVDF-TrEF top-gate via conductive atomic force microscopy, the team has created programmable Schottky junctions in monolayer MoS 2 , where both barrier height and I-V rectifying polarity can be reconfigured. The transport anisotropy of monolayer to few-layer ReS 2 has been mapped out by defining the entire channel into an insulating state and creating nanoscale conducting paths along different directions through domain writing in the ferroelectric top-gate. The result shows that the conductivity along and perpendicular to the Re-chain can differ by >5.5x10 4 . Theoretical modeling points to the band origin of the transport anomaly and reveals the emergence of a flat band in few-layer ReS 2 . The interfacial epitaxial relation between ReS 2 and PVDF-TrFE further promotes the formation of close-packed, highly ordered PVDF-TrFE nanowires with width of 35 nm and 10 nm. Nonvolatile modulation of quantum Hall effect has been achieved in graphene FETs with a ferroelectric oxide Ba 0.4 Sr 0.6 TiO 3 back-gate. Scattering from the remote surface optical phonon in Ba 0.4 Sr 0.6 TiO 3 limits the room temperature mobility of graphene to be about 3x10 4 cm 2 /Vs. Steep-slope switching has been achieved in MoS 2 FETs back-gated by polycrystalline Pb(Zr,Ti)O 3 , which signals a static-state negative capacitance mode without involving an additional dielectric layer. Piezoresponse force microscopy studies show that the sub-threshold swing can be well correlated with the domain wall density in Pb(Zr,Ti)O 3 . The team also observes an unconventional filtering effect of the second harmonic generation response at the MoS 2 /Pb(Zr,Ti)O 3 heterointerface, which can be accounted for by the alignment between one of the polar axes of MoS 2 and the chiral dipole rotation at the surface of domain wall in Pb(Zr,Ti)O 3 . The research supported by this DOE grant has significantly advanced the fundamental understanding and functional design of ferroelectric/2D van der Waals heterostructures for their implementation towards energy applications.

36 MATERIALS SCIENCE↗
DOE OSTI2024

HPE ultralit project (ARPA-E open program 2018) final report 15

The goal of the program was to build a fully integrated optical transceiver with >1 Tb/s and <1.5 pJ/bit operating at 50 ◦ C. Optical transceivers are critical components in high-performance-computers (HPC) and data centers, and the details of their implementation has a big impact on the total power consumption (energy efficiency) of an HPC system. Our proposed transceiver used three key enabling technologies. Firstly, SiGe avalanche photodetectors have record-low sensitivities, meaning that they can reach low bit error rates with very little light input. As a result, we can drive our lasers at a lower drive current, thus saving electrical power. Secondly, we use MOS-based capacitive tuning in our deinterleaver, modulator, and demultiplexer. Capacitive tuning allows for the tuning of photonic elements with zero static power consumption. Thirdly, we use quantum dots as the gain material in our light source. This allows us to efficiently use our light source at temperatures that are typically encountered in an HPCsystem. Our proposed optical transceiver consisted of a quantum dot comb laser as a light source, a booster SOA, MOS-based deinterleavers, MOS based ring modulators, MOS-based ring demultiplexers, and SiGe APDs.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2025

Interfacial oxide and other species in trimethylaluminum-pretreated atomic layer deposition-Al 2 O 3 /GaN characterized by sputter-assisted ToF-SIMS

Deposition techniques, like atomic layer deposition (ALD), are used to form high-quality dielectrics for GaN-based metal–oxide–semiconductor (MOS) gate structures due to the lack of a reliable thermal oxide in GaN. Moreover, interfacial GaO x from pre-existing native oxides is thought to adversely impact channel carrier dynamics and induce undesired threshold voltage shifts in GaN-based MOS gate structures. Exposure of the GaN surface to the trimethylaluminum (TMA) precursor prior to standard alumina ALD decreases the native oxide layer on GaN, but the extent of chemical modification has not been well studied in the context of interface composition in a MOS gate structure. Herein, we compare annealed 55 nm Al 2 O 3 dielectric films on GaN grown using either a water-first ALD process or a process including sequential pulses of TMA immediately before the initiation of Al 2 O 3 ALD. Time-of-Flight Secondary Ion Mass Spectrometry measures differences in the interfacial GaO x content between each ALD film. Here, it also detects surface contaminant species like Si, F, S, and C. Furthermore, we report the formation of an AlN species at the Al 2 O 3 /GaN interface, which is more prominent for the film grown using the TMA pre-pulse step. In general, this work demonstrates that the TMA pre-pulse step is an effective strategy for cleaning substrate surfaces prior to ALD.

Atomic layer deposition↗
DOE OSTI2020

S/U Comparison Study with a Focus on USLs

Under a DOE Nuclear Criticality Safety Program (NCSP) task involving Analytical Methods, three Laboratories collaborated in a comparison of results obtained from Sensitivity/Uncertainty (S/U) packages relevant to validation of transport codes. The task involves Institut de Radioprotection et de Sûreté Nucléaire (IRSN), Los Alamos National Laboratory (LANL), and Oak Ridge National Laboratory (ORNL) comparing results of MORET 5/MACSENS V3.0, MCNP6.2/Whisper-1.1, and SCALE 6.2.3/TSUNAMI/USLSTATS respectively. All Monte Carlo transport code results utilize ENDF/B-VII.1. Four cases from the International Handbook of Evaluated Criticality Safety Benchmark Experiments (ICSBEP Handbook) were selected as application models: HEU-MET-FAST-013-001, HEU-SOL-THERM 001-008, PU-MET-FAST-022-001, and PU-SOL-THERM 001-001. Ultimately, comparison is made between Upper Subcritical Limits (USLs) obtained using each code package for each application case. Since differences exist in whether packages take into account margin of subcriticality (MOS), the USL may be computed using bias and bias uncertainty, also known as the calculational margin (CM) in ANSI/ANS 8.24. Application of portions of MOS to the USL for nuclear data uncertainty of and potential code margin is referred to as USL herein. In either case, additional MOS is considered for actual application cases.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2023

Fully Inkjet‐Printed, 2D Materials‐Based Field‐Effect Transistor for Water Sensing

Abstract Despite significant progress in solution‐processing of 2D materials, it remains challenging to reliably print high‐performance semiconducting channels that can be efficiently modulated in a field‐effect transistor (FET). Herein, electrochemically exfoliated MoS 2 nanosheets are inkjet‐printed into ultrathin semiconducting channels, resulting in high on/off current ratios up to 10 3 . The reported printing strategy is reliable and general for thin film channel fabrication even in the presence of the ubiquitous coffee‐ring effect. Statistical modeling analysis on the printed pattern profiles suggests that a spaced parallel printing approach can overcome the coffee‐ring effect during inkjet printing, resulting in uniform 2D flake percolation networks. The uniformity of the printed features allows the MoS 2 channel to be hundreds of micrometers long, which easily accommodates the typical inkjet printing resolution of tens of micrometers, thereby enabling fully printed FETs. As a proof of concept, FET water sensors are demonstrated using printed MoS 2 as the FET channel, and printed graphene as the electrodes and the sensing area. After functionalization of the sensing area, the printed water sensor shows a selective response to Pb 2+ in water down to 2 ppb. This work paves the way for additive nanomanufacturing of FET‐based sensors and related devices using 2D nanomaterials.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Rational design of stable sulfur vacancies in molybdenum disulfide for hydrogen evolution

Sulfur (S) vacancies in MoS 2 have been found to act as a new active center, which shows an unprecedented intrinsic HER activity under elastic strain. However, such S-vacancies are unstable and the activities are very sensitive to the vacancy concentration. A strategy to stabilize these abundant active sites is thus highly desirable. Herein, we rationally design a catalyst system to stabilize S-vacancies in the basal plane of $2H-$MoS 2 supported on defective vertical graphene network (VGN). The energetically favorable line-shaped S-vacancies in MoS 2 shows a consistently high HER activity that is insensitive to S-vacancy concentration. Moreover, the defective graphene support effectively stabilizes these S-vacancies. The optimized catalyst exhibits a superior HER activity with overpotential of 128 mV at 10 mA cm -2 and Tafel slope of 50 mV dec -1 . Most importantly, the catalyst shows greatly increased stability over 500 h; benchmarking the most stable nonprecious HER catalyst in acidic media to date.

2D heterostructure↗
DOE OSTI2025

Phase transition in two-dimensional monolayer (1L)-molybdenum disulfide induced by atomic S-basal plane gliding via synchrotron X-ray monochromatic beam radiation for superior electronic performance

Here, in this work, we report a novel approach to reduce the channel resistance by inducing a phase transition behavior from 2H to 1T in a monolayer MoS 2 (1L-MoS 2 ) by a synchrotron X-ray monochromatic beam (mono-beam) radiation. The effects of the biphase structure by the mono-beam on the 1L-MoS2 film were investigated using Raman spectra, photoluminescence (PL) spectra, scanning tunneling microscopy, and scanning tunneling spectroscopy, respectively. Through material characterization, we identified that the lateral sliding of S-vacancies along the S-plane in the 1L-MoS 2 is the key reason for the origin of unidirectional phase transition. The precise phase engineering triggered by the mono-beam radiation process allows the realization of field-effect transistors (FET) with 2X improvement in mobility toward a high on/off ratio (~10 8 ) and a near-ideal subthreshold swing of ~88 mV per decade. The validity of the phase engineering could be further extended for its application as a memory device, exhibiting a gate tunable conduction modulation behavior and a high resistance ratio of ~10 2 at a gate bias of 5 V with endurance of ~100 cycles. Furthermore, an artificial neural network using the synaptic weight update with accuracy of ~93 % was achieved.

36 MATERIALS SCIENCE↗