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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
NASA NTRS1974

High-efficiency, low-temperature cesium diodes with lanthanum-hexaboride electrodes

Lanthanum hexaboride electrodes in 1700 K cesium diodes may triple power outputs compared with those demonstrated for nuclear thermionic space applications. Still greater relative gains seem possible for emitters below 1700 K. Further improvements in cesium diode performance should result from the lower collector temperatures allowed for earth and low power space duties. Decreased temperatures will lessen thermal transport losses that attend thermionic conversion mechanisms. Such advantages will add to those from collector Carnot and electrode effects. If plasma ignition difficulties impede diode temperature reductions, recycling small fractions of the output power could provide ionization. So high efficiency, low temperature cesium diodes with lanthanum hexaboride electrodes appear feasible.

Morris, J. F.↗
NASA NTRS1998

Characterization of PVT Grown ZnSe by Low Temperature Photoluminescence

ZnSe, a II-VI semiconductor with a large direct band gap of 2.7 eV at room temperature and 2.82 eV at 10 K, is considered a promising material for optoelectric applications in the blue-green region of the spectrum. Photoemitting devices and diode laser action has been demonstrated as a result of decades of research. A key issue in the development of II-VI semiconductors is the control of the concentration of the various impurities. The II-VI semiconductors seem to defy the effort of high level doping due to the well known self compensation of the donors and the acceptors. A good understanding of roles of the impurities and the behavior of the various intrinsic defects such as vacancies, interstitials and their complexes with impurities is necessary in the development and application of these materials. Persistent impurities such as Li and Cu have long played a central role in the photoelectronic properties of many II-VI compounds, particularly ZnSe. The shallow centers which may promote useful electrical conductivity are of particular interest. They contribute the richly structured near gap edge luminescence, containing weak to moderate phonon coupling and therefore very accessible information about the energy states of the different centers. Significance of those residual impurities which may contribute such centers in II-VI semiconductors must be fully appreciated before improved control of their electrical properties may be possible. Low temperature photoluminescence spectroscopy is an important source of information and a useful tool of characterization of II-VI semiconductors such as ZnSe. The low temperature photoluminescence spectrum of a ZnSe single crystal typically consists of a broad band emission peaking at 2.34 eV, known as the Cu-green band, and some very sharp lines near the band gap. These bands and lines are used to identify the impurity ingredients and the defects. The assessment of the quality of the crystal based on the photoluminescence analysis is then possible. In this report we present the characterization of a ZnSe single crystal as grown by the physical vapor transport method, with special intention paid to the possible effects of the gravitational field to the growth of the crystal.

Wang, Ling Jun↗
NASA NTRS1994

PV Technology for Low Intensity, Low Temperature (LILT) Applications

As a result of the recent NASA emphasis on smaller, lower cost space missions, PV is now being considered for a number of missions operating at solar distances of 3 AU or greater. In the past, many of these missions would utilize an RTG (radioisotope thermoelectric generator). Historically, silicon solar cell behavior at these distances has been compromised by a number of mechanisms including shunting, nonohmic back contacts, and the 'broken knee' curve shape. The former two can usually be neglected for modern silicon cells, but the latter has not been eliminated. This problem has been identified with localized diffusion at the top contact/silicon interface which leads to structural changes at the local junction. This is believed to create a resistive metal-semiconductor-like (MSL) interface in parallel with the junction which results in the characteristic forms of the LILT (low intensity, low temperature) 'broken knee'. This paper discusses a TaSiN contact barrier that will prevent the MSL structure in the junction.

spacecraft power LILT low temperature low intensit↗
NASA NTRS1994

(abstract) PV Technology for Low Intensity, Low Temperature (LILT) Applications

As a result of the recent NASA emphasis on smaller, lower cost space missions, PV is now being considered for a number of missions operating at solar distances of 3 AU or greater. In the past, many of these missions would utilize an RTG (radioisotope thermoelectric generator). Historically, silicon solar cell behavior at these distances has been compromised by a number of mechanisms including shunting, nonohmic back contacts, and the 'broken knee' curve shape. The former two can usually be neglected for modern silicon cells, but the latter has not been eliminated. This problem has been identified with localized diffusion at the top contact/silicon interface which leads to structural changes at the local junction. This is believed to create a resistive metal-semiconductor-like (MSL) interface in parallel with the junction which results in the characteristic forms of the LILT (low intensity, low temperature) 'broken knee'. This paper discusses a TaSiN contact barrier that will prevent the MSL structure in the junction.

spacecraft power LILT low temperature low intensit↗
NASA NTRS1999

Electrolytes for Li-Ion Cells in Low Temperature Applications

A number of upcoming NASA missions require energy storage devices which display high energy density and can effectively operate at low temperature. Lithium-ion batteries have been identified as the most promising technology which can meet these stringent requirements.

electrolytes↗
NASA NTRS1974

Influence of low temperatures of friction and wear

A brief review of studies on low-temperature friction are briefly reviewed. A facility and technique for studying friction both in air and in vacuum at temperatures of +20 and -190 C is described. Results of a wear study of structural steels operating together with chromium steel are presented. It is shown that reduction of the test temperature in vacuum leads in certain cases to marked increase of the wear magnitude and friction coefficient. This is associated not only with the general change of the mechanical properties of the materials but also with the influence of temperature reduction on the hardening and structural formation taking place in the surface layers during friction.

Udovenko, V. F.↗
NASA NTRS1976

Low temperature simulation of subliming boundary layer flow in Jupiter atmosphere

A low-temperature approximate simulation for the sublimation of a graphite heat shield under Jovian entry conditions is studied. A set of algebraic equations is derived to approximate the governing equation and boundary conditions, based on order-of-magnitude analysis. Characteristic quantities such as the wall temperature and the subliming velocity are predicted. Similarity parameters that are needed to simulate the most dominant phenomena of the Jovian entry flow are also given. An approximate simulation of the sublimation of the graphite heat shield is performed with an air-dry-ice model. The simulation with the air-dry-ice model may be carried out experimentally at a lower temperature of 3000 to 6000 K instead of the entry temperature of 14,000 K. The rate of graphite sublimation predicted by the present algebraic approximation agrees to the order of magnitude with extrapolated data. The limitations of the simulation method and its utility are discussed.

Chen, C. J.↗
NASA NTRS1978

Elastic constants at low temperatures - Recent measurements on technological materials at NBS

Solid-state low-temperature elastic properties have been experimentally studied at the NBS Cryogenic Division for four years. Most studies were between room temperature and liquid-helium temperature; some were only to liquid-nitrogen temperature. Two dynamic (high-frequency) experimental methods were used, pulse-echo and resonance, resulting in adiabatic elastic constants. The present paper reviews these studies for 47 technological materials - metals, alloys, and composites. The elastic constants primarily discussed are Young's modulus, the shear modulus, the bulk modulus (reciprocal compressibility), and Poisson's ratio. A summary table is presented to show which base metals tend to exhibit regular, irregular, or anomalous behavior in their elastic constant/temperature curves.

Ledbetter, H. M.↗
NASA NTRS1990

Low-Temperature CO-Oxidation Catalysts for Long-Life CO2 Lasers

Low-temperature CO-oxidation catalysts are necessary for closed-cycle pulsed CO2 lasers as well as for other applications, including air purification. The papers presented in this volume discuss several such catalysts, including information on catalyst preparation, techniques for enhancing catalyst performance, laboratory and laser test results, and mechanistic considerations.

Schryer, David R.↗
NASA NTRS1990

Low temperature performance of lithium/silver vanadium oxide cells

Lithium/silver vanadium oxide cells for low temperature applications have been developed. Prismatic and spirally wound AA cells were tested under constant load discharge of 0.3 to 1.8 amps or pulse discharge of 0.225 or 1.0 amps at temperatures from -40 to 25 C. At -40 C with current densities of 2.5 mA/cm2, 23 percent of theoretical capacity was achieved under constant load discharge and 40 percent of theoretical capacity was achieved under pulse test. Self-discharge estimates of 0.7 percent per year at 25 C were obtained from microcalorimetry. Preliminary safety testing of the cells revealed no violent performance under short circuit or crush tests.

Takeuchi, E. S.↗