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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
NASA NTRS2018

Quantitative validation of Ames IR intensity and new line lists for (32/33/34)S(16)O2, (32)S(18)O2 and (16)O(32)S(18)O

The quality of Ames-296K SO2 Infrared (IR) line list intensities is first validated by quantitative exploration of several dipole moment surfaces (DMSs) and partition sum convergence. The DMSs are computed with several of Dunning’s correlation-consistent basis sets and their vibrational dependence are compared to the empirical model derived from Stark effect experiments reported by D. Patel, D. Margolese, and T.R. Dykea [J.Chem.Phys. 70, 2740 (1979)]. The effective dipole deviations from the DMS adopted in the Ames IR lists is 0.2-0.4% for vibrational states up to 3v3. The vibrational dependence of the dipole moment is also in good agreement, except for nv1. Partition sum convergence at 296K is confirmed by new calculations with rotational quantum number J up to 150 and upper state E’ up to 8000 cm-1. The isotopologue consistency of the Ames IR line lists is superior relative to the regular Effective Hamiltonian (EH) models and Effective Dipole Moment (EDM) models. The v1+v2 and v2+v3 intensity consistency check reveals the recently reported experimental intensities need significant improvement or re-analysis. After the accuracy, convergence, and isotopologue consistency have been confirmed, the theoretical Ames-296K intensities are combined with the experimental line positions or EH models that experimental spectroscopists published after 2009. Three high-resolution IR line sets are reported for the (32/33/34)S(16)O2, (32)S(18)O2 and (16)O(32)S(18)O isotopologues: (1) the “New Lines Sets” include experimentally measured line positions; (2) the “Expanded Line Sets” include possible transitions among new rovibrational levels assigned in experiments and ground state (GS) levels predicted by reliable EH models; (3) the “Ames + MARVEL Sets” include possible transitions among all those levels reported in a recent MARVEL analysis. [Tóbiás et al, JQSRT 208, 152 (2018)]. Compared to the limited data in High-resolution TRANsmission molecular absorption database (HITRAN), these line sets have significantly improved the data coverage up to 4000 cm-1. Some missing bands can be traced to the unpublished experimental data. The isotopologue consistency of these line sets will help identify the uncertainties and defects in the experimental EH and EDM models. These line sets are good candidates for the next HITRAN update, if line shape parameters are available. The line sets can be downloaded from supplementary files or from the Ames Molecular Spectroscopic Database at http://huang.seti.org.

Xinchuan Huang↗
DOE OSTI2026

High-Throughput Uniformity and Defect Monitoring in Low-Temperature Electrolysis Porous Transport Layers Using X-Ray Radiography

Effective quality control (QC) for manufacturing proton exchange membrane water electrolysis (PEMWE) components is critical to enabling widespread adoption of the technology for hydrogen generation. This study investigates X-ray radiography as a novel, high-throughput, potentially in-line QC technique for detecting defects and assessing material property distributions in titanium-based porous transport layers (PTLs) which constitute a crucial component of low temperature PEMWE stacks. We obtain radiographs of a set of fifteen PTLs and model their absorbance of the broadband radiation as a second-order polynomial to account for the non-monoenergetic radiation source used in this study. The resulting model serves as a basis for predicting the areal density and porosity distributions of the PTLs. We find radiography successful in detecting multiple instances of defects, including holes/depressions, cracks, and excess material on the surface or in the pores of the material, demonstrating its potential as a robust in-line QC tool for PTL manufacturing.

08 HYDROGEN↗
NASA NTRS2005

Application of Hilbert-Huang Transform for Improved Defect Detection in Terahertz NDE of Shuttle Tiles

Terahertz NDE is being examined as a method to inspect the adhesive bond-line of Space Shuttle tiles for defects. Terahertz signals are generated and detected, using optical excitation of biased semiconductors with femtosecond laser pulses. Shuttle tile samples were manufactured with defects that included repair regions unbond regions, and other conditions that occur in Shuttle structures. These samples were inspected with a commercial terahertz NDE system that scanned a tile and generated a data set of RF signals. The signals were post processed to generate C-scan type images that are typically seen in ultrasonic NDE. To improve defect visualization the Hilbert-Huang Transform, a transform that decomposes a signal into oscillating components called intrinsic mode functions, was applied to test signals identified as being in and out of the defect regions and then on a complete data set. As expected with this transform, the results showed that the decomposed low-order modes correspond to signal noise while the high-order modes correspond to low frequency oscillations in the signal and mid-order modes correspond to local signal oscillations. The local oscillations compare well with various reflection interfaces and the defect locations in the original signal.

Anastasi, Robert F.↗
NASA NTRS2018

A Screening Method Using Pulsed-Power Combined with Infrared Imaging to Detect Pattern Defects in Bulk Metal Foil or Thin Film Resistors

Bulk metal foil and thin film resistors occasionally contain localized defects within the etched resistor pattern. Common defects of this type include in-line constrictions referred to as notches, unremoved resistor material bridges between adjacent pattern lines, and embedded non-conductive particles in the resistor material. Such defects are prone to fracture due to thermomechanical fatigue during powered operation, especially power cycling, resulting in positive resistance change and open circuit failure modes. Common screening methods of optical microscopy, short time overload power tests (e.g., 6.25x rated power for 5 seconds) and burn-in (e.g., 1.5x rated power for 100 hours) are useful, but they are not always effective at removing devices with such defects. An improved method has been developed to screen for localized resistor pattern defects. The method involves the application of brief, high power electrical pulses at a low duty cycle while inspecting the resistor with a high resolution, high speed infrared camera. The following test conditions were found to be suitable for this purpose: 6.25x rated power, 1 to 5 pulses, 50 ms pulse width and 10% duty cycle. During the power pulsing, localized constrictions in the resistor pattern are identifiable as hot spots via the infrared camera. Reject criteria can be established based on observations of hot spots. To assess its effectiveness, a total of two hundred eighty (280) surface mount foil resistors (40 each from 7 different lots) were screened using this infrared technique. The screening identified twenty-nine (29) resistors with significant hot spots in the resistor pattern. All 280 resistors were then subjected to an industry standard 10,000 hour life test at 1x rated power at 70°C with power cycled for 90 minutes on and 30 minutes off. During life testing, three resistors exhibited positive resistance change failure mode. All three failures were due to thermomechanical fatigue failure of localized bridge defects at the locations identified via infrared screening. The results of this evaluation illustrate the benefits of the pulsed-power infrared detection screening technique to identify reliability suspect foil or thin film resistors that may escape common screening methods.

screening↗
NASA NTRS2018

A Screening Method Using Pulsed-Power Combined with Infrared Imaging to Detect Pattern Defects in Bulk Metal Foil or Thin Film Resistors

Bulk metal foil and thin film resistors occasionally contain localized defects within the etched resistor pattern. Common defects of this type include in-line constrictions referred to as notches, unremoved resistor material bridges between adjacent pattern lines, and embedded non-conductive particles in the resistor material. Such defects are prone to fracture due to thermomechanical fatigue during powered operation, especially power cycling, resulting in positive resistance change and open circuit failure modes. Common screening methods of optical microscopy, short time overload power tests (e.g., 6.25x rated power for 5 seconds) and burn-in (e.g., 1.5x rated power for 100 hours) are useful, but they are not always effective at removing devices with such defects. An improved method has been developed to screen for localized resistor pattern defects. The method involves the application of brief, high power electrical pulses at a low duty cycle while inspecting the resistor with a high resolution, high speed infrared camera. The following test conditions were found to be suitable for this purpose: 6.25x rated power, 1 to 5 pulses, 50 ms pulse width and 10% duty cycle. During the power pulsing, localized constrictions in the resistor pattern are identifiable as hot spots via the infrared camera. Reject criteria can be established based on observations of hot spots. To assess its effectiveness, a total of two hundred eighty (280) surface mount foil resistors (40 each from 7 different lots) were screened using this infrared technique. The screening identified twenty-nine (29) resistors with significant hot spots in the resistor pattern. All 280 resistors were then subjected to an industry standard 10,000 hour life test at 1x rated power at 70°C with power cycled for 90 minutes on and 30 minutes off. During life testing, three resistors exhibited positive resistance change failure mode. All three failures were due to thermomechanical fatigue failure of localized bridge defects at the locations identified via infrared screening. The results of this evaluation illustrate the benefits of the pulsed-power infrared detection screening technique to identify reliability suspect foil or thin film resistors that may escape common screening methods.

screening↗
DOE OSTI2012

Vacancy-type defects in In{sub x}Ga{sub 1-x}N alloys probed using a monoenergetic positron beam

Native defects in In{sub x}Ga{sub 1-x}N grown by plasma-assisted molecular beam epitaxy were probed by a monoenergetic positron beam. Doppler broadening spectra of the annihilation radiation were measured, and these were compared with results obtained using first-principles calculation. The defect concentration increased with increasing In composition x and reached the maximum at x = 0.44{approx}0.56. A clear correlation between the line-width of photoluminescence and the defect concentration was obtained. The major defect species detected by positron annihilation was identified as cation vacancies coupled with multiple nitrogen vacancies (V{sub N}s), and their introduction mechanism is discussed in terms of the strain energy due to bond-length/angle distortions and the suppression of the V{sub N} formation energy by neighboring In atoms.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Optical properties of implanted Xe color centers in diamond

Optical properties of color centers in diamond have been the subject of intense research due to their promising applications in quantum photonics. Here in this work we study the optical properties of Xe related color centers implanted into nitrogen rich (type IIA) and an ultrapure, electronic grade diamond. The Xe defect has two zero phonon lines at 794 nm and 811 nm, which can be effectively excited using both green and red excitation, however, its emission in the nitrogen rich diamond is brighter. Near resonant excitation is performed at cryogenic temperatures and luminescence is probed under strong magnetic field. Finally, our results are important towards the understanding of the Xe related defect and other near infrared color centers in diamond.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Effects of Fe atoms on hardening of a nickel matrix: Nanoindentation experiments and atom-scale numerical modeling

Significant hardening effect due to Fe concentrations in Ni-based alloys with face-centered-cubic structure has been studied by using a combined experimental and atomistic-based computational approach via nanoindentation tests. The obtained experimental load–displacement data for the [0 0 1] crystal orientation reached a qualitative good agreement with molecular dynamics simulations results, leading to strong evidence that the main strengthening factors are associated to sluggish dislocation diffusion, reduced defect sizes and the nucleation of tetrahedral stacking faults. Here, interstitial type prismatic dislocation loops mainly formed by $\frac{1}{6}$$\langle$1 1 2$\rangle$ Shockley dislocations are nucleated during the loading process, where their interaction leads to the formation of pyramidal shaped stacking fault which are mainly created by $\frac{1}{3}$$\langle$1 0 0$\rangle$ Hirth dislocations lines. Observing both types of defects coexisting in the same plastic deformation zone by both approaches. Reported mechanical data, measured experimentally and interpreted numerically, are also in accordance with microstructural SEM and TEM investigations.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Defect structure and electronic properties of SiOC:H films used for back end of line dielectrics

Back end of the line dielectrics (BEOL) with low dielectric constants, so called low-k dielectrics, are needed for current and future integrated circuit technology nodes. However, an understanding of the defects which limit reliability and cause leakage currents for these films is not yet developed. We primarily utilize conventional electron paramagnetic resonance (EPR) and leakage current measurements to investigate amorphous hydrogenated carbon doped oxide (a-SiOC:H) dielectrics, the most important in current BEOL technology. The resonance measurements were complemented by transmission Fourier-transform infra-red spectroscopy, x-ray reflectivity, and Rutherford backscattering measurements. Various compositions of a-SiOC:H films were deposited on 300 mm diameter Si (100) wafers. They exhibit a wide range of dielectric constant, composition, and porosity. Variations in deposition method, process chemistry, and post deposition curing were also investigated. We observe a remarkable range of paramagnetic defect populations within the films. In a large subset of the films with similar defect structure, we observe a strong correlation between carbon dangling bond paramagnetic defect densities and leakage currents, especially at lower electric fields. This correspondence strongly suggests that, in this subset, defects observed by EPR are in a large part responsible for the leakage currents at low electric fields. In addition, the results suggest that the observed defects likely limit the dielectric reliability in problems such as time dependent dielectric breakdown and stress induced leakage current in many of these films. However, the EPR results are complex, and a simple universal correspondence between defect populations and leakage does not seem to be present.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Quantifying irradiation defects in zirconium alloys: a comparison between transmission electron microscopy and whole-pattern diffraction line-profile analysis - 2016-0089

Irradiation-induced dislocations significantly affect the mechanical properties of zirconium alloys, altering slip and influencing creep and growth. Thus, the quantitative characterization of irradiation defects as a function of fluence, cold work, and/or thermal treatments is important for models that attempt to predict their impact on properties. Whole-pattern diffraction line-profile analysis (DLPA) is a well-established modern tool for microstructure characterization based on first-principle physical models for dislocation density measurements in plastically deformed materials. However, applying these DLPA methods directly to irradiated materials yields higher than expected dislocation density values compared with historical transmission electron microscopy (TEM) measurements and past line-broadening analysis studies calibrated to TEM observations. In an effort to understand these differences, a new microstructural model was developed for DLPA to specifically address dislocation structures consisting of elliptical - and -component loops. To compare the refined DLPA method with TEM measurements, high-resolution neutron diffraction patterns on nonirradiated and irradiated Zr-2.5Nb samples were collected with the Neutron Powder Diffractometer instrument at the Los Alamos Neutron Science Center and were evaluated. High-resolution TEM measurements were performed at the Reactor Materials Testing Laboratory, Queen's University, for comparison with the DLPA results. The capabilities and inherent uncertainties of both the refined DLPA and TEM methods are compared and discussed in detail. We show that the differences between the density values provided by DLPA and TEM are inherent to the methods and can be reconciled with the interpretation of the data. (authors)

36 MATERIALS SCIENCE↗
DOE OSTI2017

Strong-pinning regimes by spherical inclusions in anisotropic type-II superconductors

The current-carrying capacity of type-II superconductors is decisively determined by how well material defect structures can immobilize vortex lines. In order to gain deeper insights into intrinsic pinning mechanisms, we have explored the case of vortex trapping by randomly distributed spherical inclusions using large-scale simulations of the time-dependent Ginzburg-Landau equations. We find that for a small density of particles having diameters of two coherence lengths, the vortex lattice preserves its structure and the critical current j c decays with the magnetic field following a power-law B -a with a ≈ 0.66, which is consistent with predictions of strong pinning theory. For higher density of particles and/or larger inclusions, the lattice becomes progressively more disordered and the exponent smoothly decreases down to a ≈ 0.3. At high magnetic fields, all inclusions capture a vortex and the critical current decays faster than B -1 as would be expected by theory. In the case of larger inclusions with diameter of four coherence length, the magnetic-field dependence of the critical current is strongly affected by the ability of inclusions to capture multiple vortex lines. We found that at small densities, the fraction of inclusions trapping two vortex lines rapidly grows within narrow field range leading to a shallow peak in j c (B)-dependence within this range. With increasing inclusion density, this peak transforms into a plateau, which then smooths out. Using the insights gained from simulations, we determine the limits of applicability of strong pinning theory and provide different routes to describe vortex pinning beyond those bounds.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Designing defect-based qubit candidates in wide-gap binary semiconductors for solid-state quantum technologies

We report that the development of novel quantum bits is key to extending the scope of solid-state quantum-information science and technology. Using first-principles calculations, we propose that large metal ion–vacancy pairs are promising qubit candidates in two binary crystals: 4H-SiC and w-AlN. In particular, we found that the formation of neutral Hf- and Zr-vacancy pairs is energetically favorable in both solids; these defects have spin-triplet ground states, with electronic structures similar to those of the diamond nitrogen-vacancy center and the SiC divacancy. Interestingly, they exhibit different spin-strain coupling characteristics, and the nature of heavy metal ions may allow for easy defect implantation in desired lattice locations and ensure stability against defect diffusion. To support future experimental identification of the proposed defects, we report predictions of their optical zero-phonon line, zero-field splitting, and hyperfine parameters. Lastly, the defect design concept identified here may be generalized to other binary semiconductors to facilitate the exploration of new solid-state qubits.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Controllable 3D Manufacturing System

Next generation Small Modular Reactor (SMR) requires new and improved techniques, instrumentations and strategies to deal with the anticipated high radiation and high temperature environment (esp. in reactors). Component manufacturing technologies will be required that take full advantage of the new 3-D printing methods employed by additive manufacturing technologies. These manufacturing methods must be capable of producing components or sub components on a limited production basis and with nuclear quality. Based on our success in developing a variety of award-winning high energy and high power ultrafast fiber lasers and our pioneered work in fs laser 3D manufacturing (US patents, 9643361 and 9770760), PolarOnyx proposes to use tunable fiber lasers to develop smart AM & SM system to make nuclear quality components for SMR. In Phase I, we have achieved critical milestones and experimentally demonstrated the most critical functions of the proposed controllable laser AM: • Developed and investigated a series of NDI sensing technologies. Combination of IR thermal image and high resolution visible camera provides a powerful tool to characterize thermal distribution and defects. • Built an in-line laser induced breakdown spectroscopy (LIBS) to real time detect compositions of powder and parts, and melting temperature of the melting pool. It proves the LIBS is a very powerful tool to precisely guide the process. • Filed a patent (Application number 16378485) for integrating IR and visible images and LIBS for intelligent AM system. • Developed control algorithm and proved it works well for overhang experiment. • Achieved high density (>99%) and excellent mechanical properties. • Succeeded in developing a working and reliable calibration method to extract true temperature distribution during AM process. • Demonstrated spatial and temporal pulse shaping methods, and impact on microstructures. • Filed one utility patent • Laid out a solid path for phase II to work on controllable 3D manufacturing system development and optimization and to make components with nuclear quality. Our proprietary fs fiber laser based AM processing offers an ultimate solution for manufacturing high temperature components with high strength for nuclear systems. The 3D AM system in conjunction with the intelligent sensing and control is energy efficient and cost effective for the growing nuclear industries. Successful development of the proposed AM technology will provide a vital tool to solve existing and potential issues. This technology will be directly applied in the 3D printing area with combined market share of $10(s) of billions. The achievement in this research will have significant and wide social, scientific, and economic impacts by providing affordable low cost intelligent AM/SM systems, laser micromachining systems, improving energy efficiency, and reducing fabrication and operational cost. Having demonstrated the proof of concept in Phase I, we will prototype the controllable AM/SM system and investigate the efficiency and qualification of fabricating various nuclear quality components in Phase II.

22 GENERAL STUDIES OF NUCLEAR REACTORS↗
DOE OSTI2020

Swine Host Protein Coiled-Coil Domain-Containing 115 (CCDC115) Interacts with Classical Swine Fever Virus Structural Glycoprotein E2 during Virus Replication

Interactions between the major structural glycoprotein E2 of classical swine fever virus (CSFV) with host proteins have been identified as important factors affecting virus replication and virulence. Previously, using the yeast two-hybrid system, we identified swine host proteins specifically interacting with CSFV E2. In this report, we use a proximity ligation assay to demonstrate that swine host protein CCDC115 interacts with E2 in CSFV-infected swine cells. Using a randomly mutated E2 library in the context of a yeast two-hybrid methodology, specific amino acid mutations in the CSFV E2 protein responsible for disrupting the interaction with CCDC115 were identified. A recombinant CSFV mutant (E2ΔCCDC115v) harboring amino acid changes disrupting the E2 protein interaction with CCDC115 was produced and used as a tool to assess the role of the E2–CCDC115 interaction in viral replication and virulence in swine. CSFV E2ΔCCDC115v showed a slightly decreased ability to replicate in the SK6 swine cell line and a greater replication defect in primary swine macrophage cultures. A decreased E2–CCDC115 interaction detected by PLA is observed in cells infected with E2ΔCCDC115v. Importantly, animals intranasally infected with 105 TCID50 of E2ΔCCDC115v experienced a significantly longer survival period when compared with those infected with the parental Brescia strain. This result would indicate that the ability of CSFV E2 to bind host CCDC115 protein during infection plays an important role in virus replication in swine macrophages and in virus virulence during the infection in domestic swine.

59 BASIC BIOLOGICAL SCIENCES↗
NASA NTRS1985

Inexpensive Eddy-Current Standard

Radial crack replicas serve as evaluation standards. Technique entails intimately joining two pieces of appropriate aluminum alloy stock and centering drilled hole through and along interface. Bore surface of hole presents two vertical stock interface lines 180 degrees apart. These lines serve as radial crack defect replicas during eddy-current technique setup and verification.

Berry, Robert F., Jr.↗
DOE OSTI2017

Materials and Manufacturing Challenges for Compact Heat Exchangers of Supercritical CO2 Power Cycles

The supercritical CO2 (sCO2) power cycles rely heavily on heat recuperation to increase efficiency. Compact heat exchangers are proposed to reduce equipment size and enhance heat transfer between heat source and sCO2. Microchannel architectures in these heat exchangers are typically formed by a lamination process wherein channels are formed in layers of sheet material, which are then stacked and joined together using diffusion bonding, brazing, or transient-liquid-phase bonding (TLPB). TLPB of Ni-based superalloy (Alloy 230) sheets into stacks was investigated. Electron microscopy identified solidification shrinkage porosity on the bond line as the most common defect in the TLP bonded stacks. Tensile yield strengths of 76-86 % of the base alloy strength were obtained on bonded stacks. Scanning electron microscopy on the fracture surfaces indicated ductile failure mode in the bonded zone. Environmental stability of joined regions in Alloy 230 stacks was investigated by exposing to CO2 at 700°C for 1500 hours. Mass change and post-exposure microscopic analysis showed a corrosion behavior similar to the base material.

14 SOLAR ENERGY↗
DOE OSTI2022

Simurgh: A Framework for Cad-Driven Deep Learning Based X-Ray CT Reconstruction

High-resolution X-ray computed tomography (XCT) is an important technique for the inspection of additively manufactured (AM) parts. While XCT is typically used off-line to inspect a subset of manufactured parts, significantly accelerating measurement speed while retaining accuracy would enable use of XCT for in-line inspection to rapidly identify defects in each part as it is manufactured. Here, we propose a deep learning (DL) based approach that uses computer aided design (CAD) models of the AM parts and physics-based information to rapidly produce high-quality reconstructions from sparse XCT measurements without high quality ground truth data. Our approach uses a generative adversarial neural network (GAN) to produced realistic training data from the CAD-based simulations and a deep neural network that is trained using data from the first stage to produce accurate 3D reconstructions. Using experimental XCT data of metal parts, we demonstrate enhanced defect detection capabilities while dramatically reducing the scan time.

Ziabari, Amir↗