Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “LEDs”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Near UV based LED fabricated with K2Ba3Si8O20:Eu2+ and energy transfer between Ce3+ and Eu2+

Highlights: • A kind of novel green-emitting phosphor K{sub 2}Ba{sub 3}Si{sub 8}O{sub 20}:Ce{sup 3+},Eu{sup 2+} has been prepared. • Energy transfer in this host is systematically investigated and their origins are to be revealed. • Commission on illumination value as well as thermal luminescence quenching properties are studied. • Results indicate that the phosphor can be served as a potential green emitting phosphor candidate for LED devices. - Abstract: K{sub 2}Ba{sub 3}Si{sub 8}O{sub 20}:Eu{sup 2+} as a new green-emitting phosphor was prepared and studied in this article. This material showed powerful absorption in near ultraviolet-visible regions from 350 to 450 and its green-emitting band peaked at 502 nm. Its photoluminescence emitting intensity affected by concentrations of K{sub 2}Ba{sub 3}Si{sub 8}O{sub 20}:Ce{sup 3+} and K{sub 2}Ba{sub 3}Si{sub 8}O{sub 20}:Eu{sup 2+} was also studied and consequently verified to be a dipole–dipole interaction. Effective energy transfer was observed in Ce{sup 3+},Eu{sup 2+} co-doped K{sub 2}Ba{sub 3}Si{sub 8}O{sub 20} phosphor, and the transfer efficiency was also obtained from the decay lifetime. The K{sub 2}Ba{sub 3}Si{sub 8}O{sub 20}:Eu{sup 2+} phosphor combined with a 380 nm near-UV chip was demonstrated to produce a diode which emitted green light. This article indicates that the phosphor prepared in this work could be used in manufacturing of white light-emitting diodes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Carrier capture efficiency in InGaN/GaN LEDs: Role of high temperature annealing

By means of time integrated (TI), time-resolved (TR) photoluminescence (PL) and PL excitation spectra, we investigate the role of an high temperature post-growth thermal annealing (TA) on a set of InGaN/GaN LED structures with different dislocation densities. We provide evidence of the nature of the radiative recombination from a wide distribution of non-interacting localised states and we show the beneficial effect of thermal annealing in reducing the contribution of non-radiative recombination in the well region.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

PVP capped CdS nanoparticles for UV-LED applications

Polyvinlypyrrolidone (PVP) capped cadmium sulphide (CdS) nanoparticles are synthesized by wet chemical method. The powder X-ray diffraction (XRD) result indicates that the nanoparticles are crystallized in cubic phase. The optical properties are characterized by UV-Vis absorption. The morphology of CdS nanoparticles are studied using Scanning electron microscope (SEM). The thermal behavior of the as prepared nanoparticles has been examined by Thermo gravimetric analysis (TGA). The optical absorption study of pvp capped CdS reveal a red shift confirms the UV-LED applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

The effect of Tb{sup +3} on α-Sr{sub 2}P{sub 2}O{sub 7} phosphor for green LED phosphor application

A series of Tb{sup +3} activated α-Sr{sub 2}P{sub 2}O{sub 7} (Strontium Pyrophosphate) phosphors were synthesized by high temperature combustion synthesis method. The structural analysis has been done by x-ray diffraction and FTIR (Fourier Transform Infrared Spectrum). The results obtained in structural characterization indicate that the doping concentration did not affect the crystal phase and structure of the phosphors. X-ray diffraction pattern reveals that the all samples were consistence with the JCPDS card No. 24-1011. The phosphor was excited at 232 nm wavelength, very intense PL green emission peak have been observed at 545 nm. This illustrates, that the phosphors could be efficiently excited because of the charge transfer band of the host as well as the energy transfer process occurred between host (Sr{sub 2}P{sub 2}O{sub 7}) and activator (Tb{sup +3}). By increasing the doping concentration of Tb{sup +3}, the intensity of 545 nm emission peak has been increased predominantly and it suggest that the phosphor prepared has very good application in green LED phosphor.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Optical studies in Er{sup 3+} doped BaMoO{sub 4} downconverting phosphor for blue LEDs

Erbium ion (Er{sup 3+}) doped BaMoO{sub 4} phosphor has been synthesized via co-precipitation technique. Phase formation of the prepared phosphor has been recognized by powder X-ray diffraction analysis. The photoluminescence emission spectrum has been recorded in 400-800nm wavelength range under 380nm excitation. The observed photoluminescence peaks are explained with the help of energy level structure. The prepared phosphor seems capable to produce efficient blue colour emission which can be useful for making blue light emitting diodes (LEDs).

36 MATERIALS SCIENCE↗
DOE OSTI2016

Influence of processing parameters on long lasting hybrid phosphor for LED applications

Rare earth activated hybrid phosphors have made significant progress in terms of better light output, color properties and potential for long life. All these features coupled with low cost production and reduced maintenance have offered phosphor converted LEDs for diverse optoelectronic applications including signal lighting in advanced aviation. The present paper explores the effect of various processing parameters on luminescent hybrid phosphors fabricated through combustion synthesis.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Influence of trap-assisted and intrinsic Auger–Meitner recombination on efficiency droop in green InGaN/GaN LEDs

Here, we study the impact of deep-level defects on trap-assisted Auger–Meitner recombination in c-plane InGaN/GaN LEDs using a small-signal electroluminescence (SSEL) method and deep-level optical spectroscopy (DLOS). Carrier dynamics information, including carrier lifetime, recombination rate, and carrier density, is obtained from SSEL, while DLOS is used to obtain the deep-level defect density. Through fitting the nonradiative recombination rates of wafers with different deep-level defect densities, we obtain the Shockley–Read–Hall (SRH) and trap-assisted Auger–Meitner recombination (TAAR) coefficients. We show that defect-related nonradiative recombination, including both SRH and TAAR, accounts for a relatively small fraction of the total nonradiative recombination, which is dominated by intrinsic Auger–Meitner recombination. The interplay between carrier localization and Coulomb enhancement has a different impact on radiative and intrinsic Auger–Meitner recombination. Evidence is presented that the imbalance between the change of radiative and intrinsic Auger–Meitner recombination is the primary cause of the efficiency droop at high carrier densities in the samples studied.

36 MATERIALS SCIENCE↗
DOE OSTI2023

A single amino acid change led to structural and functional differentiation of PvHd1 to control flowering in switchgrass

Abstract Switchgrass, a forage and bioenergy crop, occurs as two main ecotypes with different but overlapping ranges of adaptation. The two ecotypes differ in a range of characteristics, including flowering time. Flowering time determines the duration of vegetative development and therefore biomass accumulation, a key trait in bioenergy crops. No causal variants for flowering time differences between switchgrass ecotypes have, as yet, been identified. In this study, we mapped a robust flowering time quantitative trait locus (QTL) on chromosome 4K in a biparental F2 population and characterized the flowering-associated transcription factor gene PvHd1, an ortholog of CONSTANS in Arabidopsis and Heading date 1 in rice, as the underlying causal gene. Protein modeling predicted that a serine to glycine substitution at position 35 (p.S35G) in B-Box domain 1 greatly altered the global structure of the PvHd1 protein. The predicted variation in protein compactness was supported in vitro by a 4 °C shift in denaturation temperature. Overexpressing the PvHd1-p.35S allele in a late-flowering CONSTANS-null Arabidopsis mutant rescued earlier flowering, whereas PvHd1-p.35G had a reduced ability to promote flowering, demonstrating that the structural variation led to functional divergence. Our findings provide us with a tool to manipulate the timing of floral transition in switchgrass cultivars and, potentially, expand their cultivation range.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2026

Half-ice, half-fire-driven ultranarrow phase crossover in one-dimensional decorated 𝑞-state Potts ferrimagnets: An AI-co-led exploration

OpenAI’s reasoning model o3-mini-high was used to carry out an exact analytic study of one-dimensional ferrimagnetic site- and bond-decorated 𝑞-state Potts models. We demonstrate that the finite-temperature ultranarrow phase crossover (UNPC), driven by a hidden “half-ice, half-fire” state recently discovered in the 𝑞=2 case (Ising model), persists for 𝑞>2. Moreover, we identify unique features for 𝑞>2, including the dome structure in the field-temperature phase diagram, and for large 𝑞 a secondary high-temperature UNPC to the fully disordered paramagnetic state. As the UNPC quickly approaches a genuine transition by enhancing 𝐽, the interaction between the backbone spins, two distinct behaviors emerge: In the site-decorated Potts model, 𝑇 0 is independent of 𝐽 and thus remains unchanged (Type-I UNPC), and in the bond-decorated Potts model with 𝑞>2, 𝑇 0 depends on 𝐽 and quickly shifts toward a finite temperature as 𝐽 increases (Type-II UNPC). These results establish a versatile framework for engineering controlled fast state-flipping switches in low-dimensional systems. Our nine-dan artificial intelligence (AI)-contribution framework assigns AI the meritorious status of AI-co-led discovery in this work.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

SSL and LED life prediction and assessment of CCT shift

Solid-state lighting (SSL) products can have a predicted life of 70% lumen output (L70) from 26,000 to 40,000 hours using the LM-80-08 testing standards. Chromaticity shift, correlated color temperature (CCT) and lumen maintenance (LM) will dramatically reduce the nominal life of SSL luminaires. In this work, an off-the-shelf luminaire from Philips (AmbientLED) has been aged in a standard wet hot temperature operating life (WHTOL) of 85% relative humidity and 85°C (85/85) in order to assess reliability of prolonged exposer in a harsh environment. Failure criterion has been derived using the Arrhenius equation from the LM-80-08 standard, as well as the 60W LED Lamp test report from an isothermal environment of 45°C. This is a similar luminaire to the test vehicle used in this research. Data characterization between the two data sets has been carried out to determine the luminaires reliability and life under the 85/85 test conditions. This characterization allows for the determination of poor quality luminaire products in the market place. The distribution properties of the shifting mean values of CCT and LM were incorporated into the Bayesian Linear Regression (BLR) to determine the degradation pattern, in order to predict the remaining useful life (RUL) of the system due to aging before the end-of-life (EoL).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2017

From model to crop: functional characterization of SPL8 in M. truncatula led to genetic improvement of biomass yield and abiotic stress tolerance in alfalfa

Biomass yield, salt tolerance and drought tolerance are important targets for alfalfa ( Medicago sativa L. ) improvement. Medicago truncatula has been developed into a model plant for alfalfa and other legumes. By screening a Tnt1 retrotransposon-tagged M. truncatula mutant population, we identified three mutants with enhanced branching. Branch development determines shoot architecture which affects important plant functions such as light acquisition, resource use and ultimately impacts biomass production. Molecular analyses revealed that the mutations were caused by Tnt1 insertions in the SQUAMOSA PROMOTER BINDING PROTEIN-LIKE 8 (SPL8) gene. The M. truncatula spl8 mutants had increased biomass yield, while overexpression of SPL8 in M. truncatula suppressed branching and reduced biomass yield. Scanning electron microscopy (SEM) analysis showed that SPL8 inhibited branching by directly suppressing axillary bud formation. Based on the M. truncatula SPL8 sequence, alfalfa SPL8 (MsSPL8) was cloned and transgenic alfalfa plants were produced. MsSPL8 down-regulated or up-regulated alfalfa plants exhibited similar phenotypes to the M. truncatula mutants or overexpression lines, respectively. Specifically, the MsSPL8 down-regulated alfalfa plants showed up to 43% increase in biomass yield in the first harvest. The impact was even more prominent in the second harvest, with up to 86% increase in biomass production compared to the control. Furthermore, downregulation of MsSPL8 led to enhanced salt and drought tolerance in transgenic alfalfa. Results from this research offer a valuable approach to simultaneously improve biomass production and abiotic stress tolerance in legumes.

09 BIOMASS FUELS↗
DOE OSTI2018

High-Performance Computing and Analysis-Led Development of High Efficiency Dilute Opposed Piston Gasoline Engine

Pinnacle is developing a multicylinder 1.2 L gasoline engine for automotive applications using high-performance computing (HPC) and analysis methods. Pinnacle and Oak Ridge National Laboratory executed large-scale multidimensional combustion analyses at the Oak Ridge Leadership Computing Facility to thoroughly explore the design space. These HPC-led investigations show high fuel efficiency (~46% gross indicated efficiency) may be achieved by operating with extremely high charge dilution levels of exhaust gas recirculation (EGR) at a light load key drive cycle condition (2000 RPM, 3 bar brake mean effective pressure (BMEP)), while simultaneously attaining high levels of fuel conversion efficiency and low NO x emissions. In this extremely dilute environment, the flame propagation event is supported by turbulence and bulk in-cylinder charge motion brought about by modulation of inlet port flow. This arrangement produces a load and speed adjustable amalgamation of swirl and counter-rotating tumble which provides the turbulence required to support stable low-temperature combustion. At higher load conditions, the engine may operate at more traditional combustion modes to generate competitive power. In this work, the numerical results from these HPC simulations are presented. Finally, further HPC simulations and test validations are underway and will be reported in future publications.

42 ENGINEERING↗
DOE OSTI2017

Electroluminescence of InAs/InAs(Sb)/InAsSbP LED heterostructures in the temperature range 4.2–300 K

The electroluminescence of InAs/InAsSbP and InAsSb/InAsSbP LED heterostructures grown on InAs substrates is studied in the temperature range T = 4.2–300 K. At low temperatures (T = 4.2–100 K), stimulated emission is observed for the InAs/InAsSbP and InAsSb/InAsSbP heterostructures with an optical cavity formed normal to the growth plane at wavelengths of, respectively, 3.03 and 3.55 μm. The emission becomes spontaneous at T > 70 K due to the resonant “switch-on” of the CHHS Auger recombination process in which the energy of a recombining electron–hole pair is transferred to a hole, with hole transition to the spin–orbit-split band. It remains spontaneous up to room temperature because of the influence exerted by other Auger processes. The results obtained show that InAs/InAs(Sb)/InAsSbP structures are promising for the fabrication of vertically emitting mid-IR lasers.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Specific Features of the Electrochemical Capacitance–Voltage Profiling of GaAs LED and pHEMT Structures with Quantum-Confined Regions

GaAs light-emitting (LED) and HEMT structures with δ-doped regions, InGaAs/GaAs quantum wells, and surface layers of InAs/GaAs quantum dots were studied by means of the electrochemical capacitance- voltage profiling technique. The concentration depth profiles of free charge carriers were obtained. Charges accumulated in quantum wells and quantum dots, as well as the doping levels of the emitter and δ layers were determined. The band structure and free carrier density distribution over the depth of the samples with different quantum well geometry were simulated. The specific features of electrochemical capacitance- voltage profiling in different heterostructure types are analyzed. A method of integration of capacitance- voltage curves at each etching stage was suggested. This method provides the efficient separation of responses from closely located layers, particularly the quantum well and δ layer.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Investigation into the Distribution of Built-in Electric Fields in LED Heterostructures with Multiple GaN/InGaN Quantum Wells by Electroreflectance Spectroscopy

Electric-field nonuniformity in the active region of a LED (light-emitting diode) heterostructure based on five identical GaN/InGaN quantum wells is investigated by the electroreflectance method. The energies of band-to-band transitions in the quantum wells and barriers are determined from the analysis of electroreflectance spectra using the Kramers–Kronig transforms. The procedure for estimating the electric-field strength in separate quantum wells of the active region by the position of spectral lines is proposed. It is found that the energies of the main transition in quantum wells of the active region with zero bias of the p–n junction differ by a magnitude on the order of 140 meV, which corresponds to a difference in the electric-field strengths of 0.78 MV/cm. It is shown that the nonuniformity of the electric field in the active region depends on the p–n junction bias.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

TECHNOLOGY: A Lesson In LED Adoption: Understanding the hurdles faced by K–12 schools

PK-12 schools lag in upgrading fluorescent lighting. Surprised? So were we; spurring a journey to understand the reasons for lagging adoption of LED. During conversations with school facility managers and other lighting professionals the reasons became clearer. What follows is a synopsis of what has been uncovered so far, yet there remains much to learn. Here, these stories are not the product of imagination; they represent real experiences, real decisions, and real concerns from 9 school districts in 7 states from coast to coast.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2021

Comparing perceptions of a dimmable LED lighting system between a real space and a virtual reality display

Over the last several decades, designers have used digital screens to view images of real and simulated spaces and make critical design decisions. Screen technology has improved during this time, as technologies like OLED have replaced legacy displays (CRT, plasma, and LCD). These new screens provide a higher pixel resolution, luminous output and contrast ratio. Immersive head-mounted displays now allow designers to view immersive images, and recent developments in real-time rendering have encouraged the uptake of virtual reality (VR) head-mounted displays in mainstream practice and design education. This paper presents an experiment on lighting perception using a series of LED lighting conditions in a real space and a virtual representation of those conditions captured using a 360° high-dynamic-range camera and presented on an HTC Vive Pro HMD. Fifty-three participants were asked to rate each lighting condition by viewing it in a real space (n = 30) or via immersive HDR photographs displayed in a VR HMD (n = 23). The results show that ratings of visual comfort, pleasantness, evenness, contrast and glare are similar between the HTC Vive Pro HMD and our real space when evaluating well-lit scenes, but significant differences emerge in dim and highly contrasted scenes for a number of rating scales.

Rockcastle, S.↗
DOE OSTI2026

Project Report: School Retrofit Demonstration of Lighting and Outlet Controls with LED Upgrades

A technology demonstration project funded by the U.S. Department of Energy (DOE) was hosted by Boston Public Schools (BPS). This project evaluated wireless controls technology for lighting systems and plug loads (energy consumed by devices plugged into electrical outlets), implemented along with LED lighting retrofits in two classrooms. This study assesses technology readiness and effectiveness to determine the deployment potential of the technology in schools.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗