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At least 307 records · Page 17

Flight Experiments of Physical Vapor Transport of ZnSe: Growth of Crystals in Various Convective Conditions

A low gravity material experiment will be performed in the Material Science Research Rack (MSRR) on International Space Station (ISS). The flight experiment will conduct crystal growths of ZnSe and related ternary compounds, such as ZnSeS and ZnSeTe, by physical vapor transport (PVT). The main objective of the project is to determine the relative contributions of gravity-driven fluid flows to the compositional distribution, incorporation of impurities and defects, and deviation from stoichiometry observed in the grown crystals as results of buoyancy-driven convection and growth interface fluctuations caused by irregular fluid-flows on Earth. The investigation consists of extensive ground-based experimental and theoretical research efforts and concurrent flight experimentation. The objectives of the ground-based studies are (1) obtain the experimental data and conduct the analyses required to define the optimum growth parameters for the flight experiments, (2) perfect various characterization techniques to establish the standard procedure for material characterization, (3) quantitatively establish the characteristics of the crystals grown on Earth as a basis for subsequent comparative evaluations of the crystals grown in a low-gravity environment and (4) develop theoretical and analytical methods required for such evaluations. ZnSe and related ternary compounds have been grown by vapor transport technique with real time in-situ non-invasive monitoring techniques. The grown crystals have been characterized extensively by various techniques to correlate the grown crystal properties with the growth conditions. This talk will focus on the ground-based studies on the PVT crystal growth of ZnSe and related ternary compounds, especially the effects of different growth orientations related to gravity direction on the grown crystals.

Su, Ching-Hua↗

Further rotation reversal studies in C-Mod L-mode plasmas

Studies of core toroidal rotation reversal phenomenology in C-Mod deuterium L-mode plasmas have been expanded to include details of the dependences on plasma current and toroidal magnetic field. Rotation reversal occurs at a critical density, and universal scaling indicates that the product of ncritq95R ∼ BT/2, with ncrit in 1020/m3, R in m, and BT in T. Measurements in H and He plasmas exhibit similar behavior, including a connection with the linear Ohmic confinement/saturated Ohmic confinement transition and the cutoff for non-diffusive heat transport. Electron density and ion cyclotron range of frequencies power modulation experiments suggest that the collisionality ν* is a unifying parameter. Strong impurity puffing causes the critical density to increase, indicating that the situation is more complicated than only collisionality, perhaps involving the details of the effects of dilution on ion temperature gradient mode stability.

Physics↗

Resistive drift wave turbulence and anomalous transport of multi-species plasma

Anomalous transport of multi-species plasma is considered with the generalized Hasegawa–Wakatani model. It is shown that the transport of all plasma species is described by fractional diffusion equations with the same effective diffusion coefficient. Strongly enhanced perturbations of heavy impurity density are found in long-living plasma flow vortices.

Physics↗

Catalytic Oxygen Reduction for Deep O 2 Removal from CO 2 Streams

Streams of CO 2 from various capture processes may contain several impurities of which O 2 is often overlooked as a problematic impurity. Because of its reactivity, the National Energy Technology Laboratory has recommended a stringent limit, less than 10 ppm, for the O 2 level in treated CO 2 products for safe transport, storage, and utilization. Here, in this study, a variety of catalytic oxygen reduction approaches using commercial automotive exhaust emission catalysts are evaluated for O 2 removal from CO 2 streams using different reducing agents, including H 2 , CO, CH 3 OH, and CH 4 . When the amount of reductant added into the feed is carefully controlled, H 2 , CO, or CH 3 OH can effectively remove O 2 from 1.5% to below 10 ppm with a single-reactor design (>99.93% removal efficiency), while simultaneously meeting the impurity limits for other species. With CH 4 as a reductant, it is challenging to simultaneously meet the the O 2 and CO specifications in a single-reactor design because CH 4 also reacts with CO 2 to produce high levels of CO in the stream (at several hundred ppm). A dual-reactor design is developed to enable the use of CH 4 , a readily available and low-cost reductant, for the purification of CO 2 streams to meet the specifications for O 2 and other impurities.

CO2 purification↗

Spatial variation of the low-temperature micro-photoluminescence of THM-grown CdZnTeSe

The quaternary compound CdZnTeSe (CZTS) has emerged as a next-generation detector material. Unlike CdZnTe (CZT), CZTS has the distinct advantages of little or no sub-grain boundary networks and a much lower concentration of Te inclusions, plus better compositional homogeneity. Thus, the material is expected to offer better spatial charge-transport homogeneity compared to CZT. However, an inhomogeneous distribution of point defects in both CZT and CZTS, such as Cd vacancies and residual impurities, can impose additional spatial inhomogeneity of the resistivity, carrier mobilities, and carrier lifetimes of the material. To investigate the spatial distribution of such defects in CZTS, low-temperature photoluminescence (PL) spectroscopic studies were performed at different positions along a single crystalline CZTS sample surface, which was grown by the traveling heater method (THM). In conclusion, the intensity variation of the PL emission of excitons bound to a neutral acceptor defect (A 0 , X), which is likely dominated by an acceptor like Cu-related level, with respect to the PL emission line from a neutral donor-bound exciton (D 0 , X) exhibited significant spatial variation, while the peak energy positions were approximately uniform due to the high compositional and bandgap homogeneity of the material.

II-VI semiconductor↗

Tungsten erosion and divertor leakage from the DIII-D SAS-VW tungsten-coated divertor in experiments with neon gas seeding

Collector probes have been used to examine tungsten divertor leakage in a variety of scenarios with low-Z impurity seeding during operation with the new tungsten-coated SAS-VW divertor in DIII-D. Measurements of tungsten deposition on collector probes inserted into the far Scrape-off-Layer (SOL) are used to deduce how efficiently tungsten leaks out of the closed, V-shaped divertor after it is eroded from the target surfaces. Qualitative differences in the tungsten deposition patterns across the collector probes provide clear experimental evidence that the SOL conditions depend on the low-Z impurity seeding conditions. These measurements show that in scenarios where neon gas is injected into the plasma, the tungsten divertor leakage and SOL transport depend on the poloidal location from which the neon is injected. In particular, neon injection from the Inner Midplane and Outer Midplane appear to each result in higher divertor leakage by a factor of 2 to 3 compared to cases with neon injection from either the SOL Crown or from the SAS-VW divertor itself.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Controlled phosphate doping into nanoscopic SiO 2 proton conducting membranes

This article describes a method to introduce phosphate (PO 4 ) into SiO 2 atomic layer deposition (ALD) films in a self-limiting fashion. The method involves the use of a less common phosphate precursor, trimethyl phosphite [P(OMe) 3 ], to introduce PO 4 as a low-level dopant, <1 at. %, into a SiO 2 ALD process using bis(ethylmethylamino)silane and a modified O 3 conversion. P(OMe) 3 does not deposit a film with typical oxygen sources but incorporates as PO 4 in an ABC-type ALD scheme at deposition temperatures ranging from 100 to 300 °C. Addition of up to ∼1 at. % of PO 4 does not significantly impact the film density or concentrations of carbon and nitrogen impurities, which are both <0.4 at. %. Despite the relatively low dopant concentrations, PO 4 incorporation is shown to have a large impact on transport properties of the film. When explored as proton (H + )-conducting membranes, undoped SiO 2 ALD films showed H + conductivities (3 × 10 −6 –8 × 10 −5 S cm −1 ) and low H 2 permeabilities (<10 −9 cm 2 s −1 ) when measured at room temperature. The addition of PO 4 is shown to increase H + conductivity to 2 × 10 −4 S cm −1 , while maintaining low H 2 permeability of <10 −9 cm 2 s −1 . The ratio of H + conductivity to H 2 permeability, a key performance metric for H + -conducting membranes used in water electrolyzers, exceeds that of commercial Nafion-117 membranes. Here, the moderate H + conductivity and very low H 2 permeability of PO 4 -doped SiO 2 films make them promising candidates as fluorine-free replacements for Nafion in applications such as water electrolysis, hydrogen fuel cells, and redox flow batteries.

Atomic layer deposition↗

Thermochemical Modeling of Radionuclide Vapor-Liquid Equilibria in Sodium Pools for SFR Mechanistic Source Term Analysis

Mechanistic source term (MST) analysis of sodium fast reactors (SFR) requires understanding of various radionuclide (RN) transport phenomena influencing potential releases from the fuel to the environment. One such phenomenon includes the retention or release of RNs from the sodium coolant pool, representing the step after possible fuel failures and influencing transport to the cover gas region. Thermodynamic vapor-liquid equilibria (VLE) calculations were performed on systems representing SFR sodium pools containing oxygen impurities and radionuclide (RN) inventories. First, an assessment and recreation of a previously developed thermodynamic database was completed, including updates to thermodynamic parameters. The RN inventories used in VLE calculations represented hypothetical source terms that might be released to the pool during previously analyzed fuel failure scenarios. The calculations were performed for all possible combinations of sodium pool size (i.e., total oxygen) and number of failed fuel pins (i.e., total RNs). In this way, multiple ratios of the RN relative to the oxygen impurity (RN:O) were compared for their impact on RN volatility, which is discussed in terms of the vapor fraction (VF), defined as the fraction of the RN that is calculated to exist in the vapor phase at equilibrium above condensed phases of that element. Similar trends in VLE behavior are seen in the equilibrium calculation results for elements of similar chemistry, and for some element types, it was found that the RN:O ratio can be important due to oxide formation, which typically exist in the condensed phase.

Shahbazi, Shayan↗

Protein Crystal Growth Under Forced Solution Flow: Experimental Setup and General Response of Lysozyme

We have experimentally studied the effects of solution flow on the growth kinetics of the protein lysozyme. To this end, we have expanded our interferometry setup by a novel crystallization cell and solution recirculation system. This combination permits monitoring of interface morphology and kinetics with a depth resolution of 200 A at bulk flow rates of up to 2000 micron/s. Particular attention was paid to the prevention of protein denaturation that is often associated with the pumping of protein solutions. We found that at bulk flow rates it less than 250 microns/s the average growth rate and step velocity, R(sub avg) and upsilon(sub avg) increase with increasing it. This can be quantitatively understood in terms of the enhanced, convective solute supply to the interface. With high-purity solutions, it u greater than 250 microns/s lead to growth deceleration, and, at low supersaturations sigma, to growth cessation. When solutions containing approx. 1% of other protein impurities were used, growth deceleration occurred at any u greater than 0 and cessation in the low sigma experiments was reached at about half the it causing cessation with pure solution. The flow-induced changes in R(sub avg) and upsilon(sub avg) including growth cessation, were reversible and reproducible, independent of the direction of the u-changes and solution purity. Hence, we attribute the deceleration to the convection-enhanced supply of impurities to the interface, which at higher flow rates overpowers the effects of enhanced interfacial solute concentration. Most importantly, we found that convective transport leads to a significant reduction in kinetics fluctuations, in agreement with our earlier expectations for the lysozyme system. This supports our hypothesis that these long-term fluctuations represent an intrinsic response feature of the coupled bulk transport-interfacial kinetics system in the mixed growth control regime.

Vekilov, P. G.↗

Long-Term Reliability of SiGe/Si HBTs From Accelerated Lifetime Testing

Accelerated lifetime tests were performed on double-mesa structure Si(0.7)Ge(0.3)/Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175 C-275 C. The transistors (with 5x20 sq micron emitter area) have DC current gains approx. 40-50 and f(sub T) and f(sub max) of up to 22 GHz and 25 GHz, respectively. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REED has been quantitatively modeled and explained, to the first order of approximation, and the agreement with the measured data is good. The mean time to failure (MTTF) of these devices at room temperature under 1.35 x 10(exp 4) A/sq cm current density operation is estimated from the extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-term reliability of the devices and circuits made with them. Hot electron induced degradation of the base-emitter junction was also observed during the accelerated lifetime testing. In order to improve the HBT reliability endangered by the hot electrons, deuterium sintered techniques have been proposed. The preliminary results from this study show that a deuterium-sintered HBT is, indeed, more resistant to hot-electron induced base-emitter junction degradation.

Bhattacharya, Pallab↗

Long-Term Reliability of High Speed SiGe/Si Heterojunction Bipolar Transistors

Accelerated lifetime tests were performed on double-mesa structure Si/Si0.7Ge0.3/Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175C-275C. Both single- and multiple finger transistors were tested. The single-finger transistors (with 5x20 micron sq m emitter area) have DC current gains approximately 40-50 and f(sub T) and f(sub MAX) of up to 22 GHz and 25 GHz, respectively. The multiple finger transistors (1.4 micron finger width, 9 emitter fingers with total emitter area of 403 micron sq m) have similar DC current gain but f(sub T) of 50 GHz. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REID has been quantitatively modeled and explained, to the first order of approximation, and the agreement with the measured data is good. The mean time to failure (MTTF) of the devices at room temperature is estimated from the extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-term reliability of the devices and circuits made with them. Hot electron induced degradation of the base-emitter junction was also observed during the accelerated lifetime testing. In order to improve the HBT reliability endangered by the hot electrons, deuterium sintered techniques have been proposed. The preliminary results from this study show that a deuterium-sintered HBT is, indeed, more resistant to hot-electron induced base-emitter junction degradation. SiGe/Si based amplifier circuits were also subjected to lifetime testing and we extrapolate MTTF is approximately 1.1_10(exp 6) hours at 125iC junction temperature from the circuit lifetime data.

Ponchak, George E.↗

Performance assessment of long-legged tightly-baffled divertor geometries in the ARC reactor concept

Extremely intense power exhaust channels are projected for tokamak-based fusion power reactors; a means to handle them remains to be demonstrated. Advanced divertor configurations have been proposed as potential solutions. Recent modelling of tightly baffled, long-legged divertor geometries for the divertor test tokamak concept, ADX, has shown that these concepts may access passively stable, fully detached regimes over a broad range of parameters. The question remains as to how such divertors may perform in a reactor setting. To explore this, numerical simulations are performed with UEDGE for the long-legged divertor geometry proposed for the ARC pilot plant conceptual design - a device with projected heat flux power width (λq||) of 0.4 mm and power exhaust of 93 MW - first for a simplified Super-X divertor configuration (SXD) and then for the actual X-point target divertor (XPTD) being proposed. It is found that the SXD, combined with 0.5% fixed-fraction neon impurity concentration, can produce passively stable, detached divertor regimes for power exhausts in the range of 80-108 MW - fully accommodating ARC's power exhaust. The XPTD configuration is found to reduce the strike-point temperature by a factor of ~10 compared to the SXD for small separations (~1.4λq||) between main and divertor X-point magnetic flux surfaces. Even greater potential reductions are identified for reducing separations to ~1λq|| or less. The power handling response is found to be insensitive to the level of cross-field convective or diffusive transport assumed in the divertor leg. By raising the separatrix density by a factor of 1.5, stable fully detached divertor solutions are obtained that fully accommodate the ARC exhaust power without impurity seeding. To our knowledge, this is the first time an impurity-free divertor power handling scenario has been obtained in edge modelling for a tokamak fusion power reactor with λq|| of 0.4 mm.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Investigation of Drift Effects in UEDGE Simulations of NSTX-U Edge Plasma With Lithium Divertors

Lithium is a low-Z material, and lithium-based plasma-facing components (PFCs) are planned for the National Spherical Torus Experiment Upgrade (NSTX-U) to explore potential benefits for divertor power exhaust and core plasma management. NSTX-U is a medium-sized spherical tokamak with up to 12 MW of auxiliary heating, capable of generating reactor-relevant plasma conditions. This work presents boundary plasma simulations for NSTX-U with lithium PFCs using the UEDGE code, incorporating full magnetic and 𝐄 ×𝐁 drift physics. The simulations show that drifts strongly influence heat and particle transport: they enhance convective transport, broaden the scrape-off layer heat-flux width 𝜆 𝑞 , and reduce the anomalous heat diffusivity 𝜒 required to reproduce predicted SOL heat-flux width. 𝐄 ×𝐁 drifts provide poloidal transport, while ∇𝐵 (which includes both gradB and curvature) drifts provide radial heat and particle transport. Lithium transport is also affected by drifts, with lithium ions migrating from the outer divertor to the inner divertor through the private flux region (PFR) following the 𝐄 ×𝐁 drifts flow, lowering upstream impurity lithium densities. UEDGE is self-consistently coupled with the Wall-Li model to study plasma lithium PFC interactions depending on the local lithium sourcing based on local plasma conditions and lithium surface temperature. In these simulations, lithium evaporation shows a vapor-shielding effect that reduces divertor heat flux and increases radiative losses once surface temperatures exceed 450°C. This research work provides a first step toward self-consistent modeling of lithium PFCs in NSTX-U, demonstrating the impact of drift-driven plasma transport in SOL and divertor regions.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Characterizing core and edge turbulence regimes with fluctuation imaging diagnostics in Wendelstein 7-X

Two density fluctuation imaging systems, phase contrast imaging (PCI) and gas puff imaging (GPI) measure spatially resolved density fluctuations with high time resolution throughout the core plasma (PCI) and in the scrape-off layer (GPI) of the Wendelstein 7-X (W7-X) stellarator. Both systems combined give a comprehensive overview of overall fluctuation levels, spectral properties such as their distribution in frequency and wavenumber space as well as their spatial distribution. These tools are used to assess changes in density turbulence in three representative discharges that transition into stable divertor detachment by different strategies (impurity seeding, density ramping and power starvation). Several general trends are identified when the radiated power fraction is systematically increased: In the plasma edge, the line emission observed by GPI shifts radially inward with a drop in electron temperature, and normalized intensity fluctuation profiles follow this inward shift. Skewness and kurtosis of these edge fluctuations are reduced, indicating a reduction of large intermittent transport events, and poloidal phase velocities decrease in magnitude. These observations are consistent with a reduced power input into the plasma edge and a general reduction of turbulent activity. Core density fluctuation levels remain nearly constant in the impurity seeding scenario, indicating that detachment does not significantly impact turbulence there. However, a strong reduction in the dominant outboard fluctuation phase velocity is observed that deviates from the previous interpretation of neoclassical radial electric field changes, showing that the core plasma is not completely unaffected. In the density ramp and power starvation scenarios, undesirable and irregular large-scale events arise clearly in both diagnostic systems as the radiative fraction is increased. Impurity seeding therefore seems to be a promising strategy on W7-X to achieve detachment without significantly altering core turbulence, especially when targeting a specific operating point in core density and heating power.

Wendelstein 7-X↗

Temperature dependence of band shifts induced by impurity ionization in ZrTe 5

We report the topological phase transition in ZrTe 5 remains a challenge for its sensitivity to the structural parameters and carrier densities. One important issue is that the temperature dependence of the band shifts has been reported controversially. Using angle-resolved photoemission spectroscopy, we study the temperature evolution of the band structures of ZrTe 5 with samples prepared by chemical vapor transport and flux methods. We find two distinct types of band shift with temperature, one monotonically moving downward to high binding energies with the increase of temperature and another one moving downward first and then reversely upward. By assuming ZrTe 5 is a semiconductor with a limited amount of impurities, we analyze the temperature-induced ionization of the impurities and chemical potential shift to interpret the discrepant experimental observations. In this scenario, the discrepancies in band structures and the controversial results on temperature-dependent band shifts can be reconciled in a unified picture.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Comparative study of boron and neon injections on divertor heat fluxes using SOLPS-ITER simulations

Here, based on the EAST equilibrium, the effects of boron (B) and neon (Ne) injected at different locations on the target heat load, and the distributions of B and Ne particles were investigated by transport code SOLPS-ITER. It was found that the B injection was more sensitive to the injection location for heat flux control than impurity Ne. The high electron and ion densities near the inner target in the discharge with impurity B injected from over X-point (R 1 ) led to plasma detachment only at the inner target, and the localized B ions in the cases with injection from outer target location (R 2 ) and upstream location (R 3 ) led to far-SOL detachment at the outer target, but not at the inner target. In contrast, for Ne, the spatial distributions of Ne ions and electrons were found to be similar in all the cases at the three injection locations, and the detached plasma was achieved at the inner target and the electron temperature was reduced at the outer target. For locations R 2 and R 3 , impurity B showed a more pronounced effect on the heat flux at the far-SOL of the outer target. Further analysis indicated that Ne atoms came mainly from the recycling sources, whereas B atoms came mainly from injection, and that their distinct atomic distributions resulted from the difference in the ionization threshold and ionization mean free path. In addition, the radiation proportion of B in the divertor region was larger than that of Ne when the total radiation power was similar, which suggests that B has less influence on the core region.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Increased radiation due to non-coronal effects on DIII-D and MAST-U with varying input power

Through SOLPS-ITER simulations of DIII-D and MAST-U, an X-divertor (XD) on DIII-D and a super X-divertor (SXD) on MAST-U were shown to have increased carbon emissivity (P Rad /n e n I ) over corresponding standard divertors (SD) at similar degrees of partial detachment. The reasons behind the increased emissivity in the DIII-D XD and SXD are analyzed using a simple 0D transport model. From the transport model, it is seen that a major cause of the increased emissivity in the XD and SXD over the SDs is a shorter impurity confinement time. An additional cause (for the SXD) is an increase in the ratio of neutral hydrogen to electron density. The input power (P in ) was varied and the XD had a higher emissivity at the higher P in , unlike the SDs which had the emissivity decrease with increasing P in . A basic geometrical reason is given to explain both the benefits of the XD over the SD as well as the increase in the XD's emissivity with P in .

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Center for Integrated Simulation of Fusion Relevant RF Actuators

This project was part of the “Center for Integrated Simulation of Fusion Relevant RF Actuators” SciDAC-4 project, led by Dr. Paul Bonoli (MIT). Rather than use an acronym (CISFRRFA), the project will be referred to in this document as the “RF-SciDAC4”. The larger SciDAC-4 project goals were to: 1. Develop an integrated simulation of the antenna + sheath + scrape-off-layer + core plasma system which fully utilizes leadership class computing resources to move towards a quantitative predictive capability for the response to RF power. 2. Work closely with the SciDAC-4 Whole Device Modeling (WDM) community to make both our new code development efforts, as well as the established hierarchy of RF tools, available within their environment, and to utilize WDM technologies to implement the couplings below. 3. Validate this predictive capability on appropriately diagnosed experiments including dedicated RF test stands, linear devices, and existing tokamaks. 4. Use these tools to inform design of robust, impurity-mitigating RF heating and current drive sources for future fusion devices.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗