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All sourcesNASA NTRSDOE OSTI
NASA NTRS1982

Advanced Welding Tool

Accutron Tool & Instrument Co.'s welder was originally developed as a tool specifically for joining parts made of plastic or composite materials in any atmosphere to include the airless environment of space. Developers decided on induction or magnetic heating to avoid causing deformation and it also can be used with almost any type of thermoplastic material. Induction coil transfers magnetic flux through the plastic to a metal screen that is sandwiched between the sheets of plastic to be joined. When welder is energized, alternating current produces inductive heating on the screen causing the adjacent plastic surfaces to melt and flow into the mesh, creating a bond on the total surface area. Dave Brown, owner of Great Falls Canoe and Kayak Repair, Vienna, VA, uses a special repair technique based on operation of the Induction Toroid Welder to fix canoes. Whitewater canoeing poses the problem of frequent gashes that are difficult to repair. The main reason is that many canoes are made of plastics. The commercial Induction model is a self-contained, portable welding gun with a switch on the handle to regulate the temperature of the plastic melting screen. Welder has a broad range of applications in the automobile, appliance, aerospace and construction industries.

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NASA NTRS2013

NASA Tech Briefs, May 2013

Topics include: Test Waveform Applications for JPL STRS Operating Environment; Pneumatic Proboscis Heat-Flow Probe; Method to Measure Total Noise Temperature of a Wireless Receiver During Operation; Cursor Control Device Test Battery; Functional Near-Infrared Spectroscopy Signals Measure Neuronal Activity in the Cortex; ESD Test Apparatus for Soldering Irons; FPGA-Based X-Ray Detection and Measurement for an X-Ray Polarimeter; Sequential Probability Ratio Test for Spacecraft Collision Avoidance Maneuver Decisions; Silicon/Carbon Nanotube Photocathode for Splitting Water; Advanced Materials and Fabrication Techniques for the Orion Attitude Control Motor; Flight Hardware Packaging Design for Stringent EMC Radiated Emission Requirements; RF Reference Switch for Spaceflight Radiometer Calibration; An Offload NIC for NASA, NLR, and Grid Computing; Multi-Scale CNT-Based Reinforcing Polymer Matrix Composites for Lightweight Structures; Ceramic Adhesive and Methods for On-Orbit Repair of Re-Entry Vehicles; Self-Healing Nanocomposites for Reusable Composite Cryotanks; Pt-Ni and Pt-Co Catalyst Synthesis Route for Fuel Cell Applications; Aerogel-Based Multilayer Insulation with Micrometeoroid Protection; Manufacturing of Nanocomposite Carbon Fibers and Composite Cylinders; Optimized Radiator Geometries for Hot Lunar Thermal Environments; A Mission Concept: Re-Entry Hopper-Aero-Space-Craft System on-Mars (REARM-Mars); New Class of Flow Batteries for Terrestrial and Aerospace Energy Storage Applications; Reliability of CCGA 1152 and CCGA 1272 Interconnect Packages for Extreme Thermal Environments; Using a Blender to Assess the Microbial Density of Encapsulated Organisms; Mixed Integer Programming and Heuristic Scheduling for Space Communication; Video Altimeter and Obstruction Detector for an Aircraft; Control Software for Piezo Stepping Actuators; Galactic Cosmic Ray Event-Based Risk Model (GERM) Code; Sasquatch Footprint Tool; and Multi-User Space Link Extension (SLE) System.

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NASA NTRS2001

Electronics for Low-Temperature Space Operation Being Evaluated

Electronic components and systems capable of low-temperature operation are needed for many future NASA missions where it is desirable to have smaller, lighter, and cheaper (unheated) spacecraft. These missions include Mars (-20 to -120 C) orbiters, landers, and rovers; Europa (-150 C) oceanic exploratory probes and instrumentation; Saturn (-183 C) and Pluto (-229 C) interplanetary probes. At the present, most electronic equipment can operate down to only -55 C. It would be very desirable to have electronic components that expand the operating temperature range down to -233 C. The successful development of these low-temperature components will eventually allow space probes and onboard electronics to operate in very cold environments (out as far as the planet Pluto). As a result, radioisotope heating units, which are used presently to keep space electronics near room temperature, will be reduced in number or eliminated. The new cold electronics will make spacecraft design and operation simpler, more flexible, more reliable, lighter, and cheaper. Researchers at the NASA Glenn Research Center are evaluating potential commercial off-the- shelf devices and are developing new electronic components that will tolerate operation at low temperatures down to -233 C. This work is being carried out mainly inhouse and also through university grants and commercial contracts. The components include analog-to-digital converters, semiconductor switches, capacitors, dielectric and packaging material, and batteries. For example, the effect of low temperature on the capacitance of three different types of capacitors is shown in the graph. Using these advanced components, system products will be developed, including dc/dc converters, battery charge/discharge management systems, digital control electronics, transducers, and sensor instrumentation.

Patterson, Richard L.↗
NASA NTRS2009

Operation of SOI P-Channel Field Effect Transistors, CHT-PMOS30, under Extreme Temperatures

Electronic systems are required to operate under extreme temperatures in NASA planetary exploration and deep space missions. Electronics on-board spacecraft must also tolerate thermal cycling between extreme temperatures. Thermal management means are usually included in today s spacecraft systems to provide adequate temperature for proper operation of the electronics. These measures, which may include heating elements, heat pipes, radiators, etc., however add to the complexity in the design of the system, increases its cost and weight, and affects its performance and reliability. Electronic parts and circuits capable of withstanding and operating under extreme temperatures would reflect in improvement in system s efficiency, reducing cost, and improving overall reliability. Semiconductor chips based on silicon-on-insulator (SOI) technology are designed mainly for high temperature applications and find extensive use in terrestrial well-logging fields. Their inherent design offers advantages over silicon devices in terms of reduced leakage currents, less power consumption, faster switching speeds, and good radiation tolerance. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. Experimental investigation on the operation of SOI, N-channel field effect transistors under wide temperature range was reported earlier [1]. This work examines the performance of P-channel devices of these SOI transistors. The electronic part investigated in this work comprised of a Cissoid s CHT-PMOS30, high temperature P-channel MOSFET (metal-oxide semiconductor field-effect transistor) device [2]. This high voltage, medium-power transistor is designed for geothermal well logging applications, aerospace and avionics, and automotive industry, and is specified for operation in the temperature range of -55 C to +225 C. Table I shows some specifications of this transistor [2]. The CHT-PMOS30 device was characterized at various temperatures over the range of -190 C to +225 C in terms of its voltage/current characteristic curves. The test temperatures included +22, -50, -100, -150, -175, -190, +50, +100, +150, +175, +200, and +225 C. Limited thermal cycling testing was also performed on the device. These tests consisted of subjecting the transistor to a total of twelve thermal cycles between -190 C and +225 C. A temperature rate of change of 10 C/min and a soak time at the test temperature of 10 minutes were used throughout this work. Post-cycling measurements were also performed at selected temperatures. In addition, re-start capability at extreme temperatures, i.e. power switched on while the device was soaking for a period of 20 minutes at the test temperatures of -190 C and +225 C, was investigated.

Patterson, Richard↗
NASA NTRS2017

The Effect of the Spin-Forbidden Co((sup 1) Sigma plus) plus O((sup 3) P) Yields CO2 (1 Sigma (sub G) plus) Recombination Reaction on Afterbody Heating of Mars Entry Vehicles

Vibrationally excited CO2, formed by two-body recombination from CO((sup 1) sigma plus) and O((sup 3) P) in the wake behind spacecraft entering the Martian atmosphere reaction, is potentially responsible for the higher than anticipated radiative heating of the backshell, compared to pre-flight predictions. This process involves a spin-forbidden transition of the transient triplet CO2 molecule to the longer-lived singlet. To accurately predict the singlet-triplet transition probability and estimate the thermal rate coefficient of the recombination reaction, ab initio methods were used to compute the first singlet and three lowest triplet CO2 potential energy surfaces and the spin-orbit coupling matrix elements between these states. Analytical fits to these four potential energy surfaces were generated for surface hopping trajectory calculations, using Tully's fewest switches surface hopping algorithm. Preliminary results for the trajectory calculations are presented. The calculated probability of a CO((sup 1) sigma plus) and O((sup 3) P) collision leading to singlet CO2 formation is on the order of 10 (sup -4). The predicted flowfield conditions for various Mars entry scenarios predict temperatures in the range of 1000 degrees Kelvin - 4000 degrees Kelvin and pressures in the range of 300-2500 pascals at the shoulder and in the wake, which is consistent with a heavy-particle collision frequency of 10 (sup 6) to 10 (sup 7) per second. Owing to this low collision frequency, it is likely that CO((sup 1) sigma plus) molecules formed by this mechanism will mostly be frozen in a highly nonequilibrium rovibrational energy state until they relax by photoemission.

CO2 recombination↗
NASA NTRS2007

SiC Multi-Chip Power Modules as Power-System Building Blocks

The term "SiC MCPMs" (wherein "MCPM" signifies "multi-chip power module") denotes electronic power-supply modules containing multiple silicon carbide power devices and silicon-on-insulator (SOI) control integrated-circuit chips. SiC MCPMs are being developed as building blocks of advanced expandable, reconfigurable, fault-tolerant power-supply systems. Exploiting the ability of SiC semiconductor devices to operate at temperatures, breakdown voltages, and current densities significantly greater than those of conventional Si devices, the designs of SiC MCPMs and of systems comprising multiple SiC MCPMs are expected to afford a greater degree of miniaturization through stacking of modules with reduced requirements for heat sinking. Moreover, the higher-temperature capabilities of SiC MCPMs could enable operation in environments hotter than Si-based power systems can withstand. The stacked SiC MCPMs in a given system can be electrically connected in series, parallel, or a series/parallel combination to increase the overall power-handling capability of the system. In addition to power connections, the modules have communication connections. The SOI controllers in the modules communicate with each other as nodes of a decentralized control network, in which no single controller exerts overall command of the system. Control functions effected via the network include synchronization of switching of power devices and rapid reconfiguration of power connections to enable the power system to continue to supply power to a load in the event of failure of one of the modules. In addition to serving as building blocks of reliable power-supply systems, SiC MCPMs could be augmented with external control circuitry to make them perform additional power-handling functions as needed for specific applications: typical functions could include regulating voltages, storing energy, and driving motors. Because identical SiC MCPM building blocks could be utilized in a variety of ways, the cost and difficulty of designing new, highly reliable power systems would be reduced considerably. Several prototype DC-to-DC power-converter modules containing SiC power-switching devices were designed and built to demonstrate the feasibility of the SiC MCPM concept. In anticipation of a future need for operation at high temperature, the circuitry in the modules includes high-temperature inductors and capacitors. These modules were designed to be stacked to construct a system of four modules electrically connected in series and/or parallel. The packaging of the modules is designed to satisfy requirements for series and parallel interconnection among modules, high power density, high thermal efficiency, small size, and light weight. Each module includes four output power connectors two for serial and two for parallel output power connections among the modules. Each module also includes two signal connectors, electrically isolated from the power connectors, that afford four zones for signal interconnections among the SOI controllers. Finally, each module includes two input power connectors, through which it receives power from an in-line power bus. This design feature is included in anticipation of a custom-designed power bus incorporating sockets compatible with snap-on type connectors to enable rapid replacement of failed modules.

Lostetter, Alexander↗
NASA NTRS1994

Non-isolated 30 kW class arcjet PCU

A 30 kW class arcjet Power Conditioning Unit, PCU, was built and tested during this Phase 2 SBIR contract. The PCU is an improved version of two previously developed PCU's. All of these units are 3-phase, 20 kHz buck regulators with current mode feed back to modulate the duty cycle to control the arcjet current at any selected operating point. The steady state control can assure arcjet stability despite the negative dynamic resistance of the arc discharge. The system also has a circuit to produce a high voltage start pulse to breakdown the gas and initiate the arc. The start pulse is formed by temporarily switching a short current path across the output terminals with a special solid state switching array. The switches then open rapidly, and the energy stored in the output inductors of the buck regulator produces a pulse of approximately 2500 V for approximately 500 nsec. The system was tested and modified until the transition to steady operation occurred after start up with a very small surge current overshoot. The system also can withstand a direct short circuit across the output without damage. The automatic feed back control simply reduces the duty cycle to hold the current at the set point. When the short is removed the full power output is immediately restored. This latest version arcjet PCU is conduction cooled to remove waste heat by conduction to the base plate. This unit is closer to flight a type of design than the previous functional bread boards. Waste heat is small because the PCU has a very high efficiency, 296 percent. The PCU was extensively tested with resistor loads to simulate operation with an arcjet. The unit was tested with ammonia arcjets at the Jet Propulsion Laboratory. Approximately 400 hours of testing were completed, with several starts. Many hours were also demonstrated with resistive loads. Some testing with hydrogen arcjets was also carried out at NASA LeRC. This system concept is now the design base for the ATTD program.

Wong, See-Pok↗
NASA NTRS1989

Spacecraft component heater control system

A heater control circuit is disclosed as being constructed in a single integrated circuit, with the integrated circuit conveniently mounted proximate to a spacecraft component requiring temperature control. Redundant heater controllers control power applied to strip heaters disposed to provide heat to a component responsive to sensed temperature from temperature sensors. Signals from these sensors are digitized and compared with a dead band temperature and set point temperature stored in memory to generate an error signal if the sensed temperature is outside the parameter stored in the memory. This error signal is utilized by a microprocessor to selectively instruct the heater controllers to apply power to the strip heaters. If necessary, the spacecraft central processor may access or interrogate the microprocessor in order to alter the set point temperature and dead band temperature range to obtain operational data relating to the operation of an integrated circuit for relaying to the ground control, or to switch off faulty components.

Bachtel, Frederick D.↗
NASA NTRS2001

Low-Temperature Spacecraft: Challenges/Opportunities

Imagine sending a spacecraft into deep space that operates at the ambient temperature of its environment rather than hundreds of degrees Kelvin warmer. The average temperature of a spacecraft warmed only by the sun drops from 279 K near the Earth's orbit to 90 K near the orbit of Saturn, and to 44 K near Pluto's orbit. At present, deep space probes struggle to maintain an operating temperature near 300 K for the onboard electronics. To warm the electronics without consuming vast amounts of electrical energy, radioisotope heater units (RHUs) are used in vast numbers. Unfortunately, since RHU are always 'on', an active thermal management system is required to reject the excess heat. A spacecraft designed to operate at cryogenic temperatures and shielded from the sun by a large communication dish or solar cell array could be less complex, lighter, and cheaper than current deep space probes. Before a complete low-temperature spacecraft becomes a reality, there are several challenges to be met. Reliable cryogenic power electronics is one of the major challenges. The Low-Temperature Power Electronics Research Group at NASA Glenn Research Center (GRC) has demonstrated the ability of some commercial off the shelf power electronic components to operate at temperatures approaching that of liquid nitrogen (77 K). Below 77 K, there exists an opportunity for the development of reliable semiconductor power switching technologies other than bulk silicon CMOS. This paper will report on the results of NASA GRC's Low-Temperature Power Electronics Program and discuss the challenges to (opportunities for) the creation of a low-temperature spacecraft.

Dickman, J. E.↗
NASA NTRS2009

SOI N-Channel Field Effect Transistors, CHT-NMOS80, for Extreme Temperatures

Extreme temperatures, both hot and cold, are anticipated in many of NASA space exploration missions as well as in terrestrial applications. One can seldom find electronics that are capable of operation under both regimes. Even for operation under one (hot or cold) temperature extreme, some thermal controls need to be introduced to provide appropriate ambient temperatures so that spacecraft on-board or field on-site electronic systems work properly. The inclusion of these controls, which comprise of heating elements and radiators along with their associated structures, adds to the complexity in the design of the system, increases cost and weight, and affects overall reliability. Thus, it would be highly desirable and very beneficial to eliminate these thermal measures in order to simplify system's design, improve efficiency, reduce development and launch costs, and improve reliability. These requirements can only be met through the development of electronic parts that are designed for proper and efficient operation under extreme temperature conditions. Silicon-on-insulator (SOI) based devices are finding more use in harsh environments due to the benefits that their inherent design offers in terms of reduced leakage currents, less power consumption, faster switching speeds, good radiation tolerance, and extreme temperature operability. Little is known, however, about their performance at cryogenic temperatures and under wide thermal swings. The objective of this work was to evaluate the performance of a new commercial-off-the-shelf (COTS) SOI parts over an extended temperature range and to determine the effects of thermal cycling on their performance. The results will establish a baseline on the suitability of such devices for use in space exploration missions under extreme temperatures, and will aid mission planners and circuit designers in the proper selection of electronic parts and circuits. The electronic part investigated in this work comprised of a CHT-NMOS80 high temperature N-channel MOSFET (metal-oxide semiconductor field-effect transistor) device that was manufactured by CISSOID. This high voltage, medium-power transistor is fabricated using SOI processes and is designed for extreme wide temperature applications such as geothermal well logging, aerospace and avionics, and automotive industry. It has a high DC current capability and is specified for operation in the temperature range of -55 C to +225 C

Patterson, Richard L.↗
NASA NTRS1996

Effect of Diet on Metabolism of Laboratory Rats

In previous studies when rats were fed a processed, semipurified, extruded rodent food bar (RFB) developed for space science research, we noted a difference in the appearance of gastrointestinal tissue (GI); therefore the following study evaluated GI characteristics and growth and metabolic rates of rats fed chow (C) or RFB. Two hundred and twenty-four rats (78 g mean body weight) were randomly assigned to 28 cages and provided C or RFB. Each cage was considered the experimental unit and a 95 percent level of significance, indicated by ANOVA, was used for inference. After each 30-, 60-, and 90-day period, eight cages were shifted from the C to RFB diet and housing density was reduced by two rats per cage. The two rats removed from each cage were sacrificed and used for GI evaluation. Metabolic rates of the rats in each cage were determined by indirect calorimetry. No differences in body weight were detected at 0, 30, 60 or 90 days between C and RFB. Heat production (kcal/hr/kg), CO2 production (L/hr/kg) and O2 consumption (L/hr/kg) were different by light:dark and age with no effect of diet. Respiratory quotient was different by age with no effect of light:dark or diet. Rats on the C diet ate less food and drank more water than those on RFB. C rats produced more fecal and waste materials than the RFB. GI lengths increased with age but were less in RFB than C. GI full and empty weights increased with age but weighed less in RFB than C. Gut-associated lymphoid tissue (GALT) numbers increased with age with no effect of diet. No differences in ileum-associated GALT area were detected between C and RFB. Switching C to RFB decreased GI length, GI full and empty weights, with no changes in GALT number or area. We concluded RFB decreased GI mass without affecting metabolic rate or general body growth.

Harrison, P. C.↗
NASA NTRS2004

Development of Electronic Load Controllers for Free-Piston Stirling Convertors Aided by Stirling Simulation Model

The free-piston Stirling convertor end-to-end modeling effort at the NASA Glenn Research Center has produced a software-based test bed in which free-piston Stirling convertors can be simulated and evaluated. The simulation model includes all the components of the convertor: the Stirling cycle engine, heat source, linear alternator, controller, and load. So far, it has been used in evaluating the performance of electronic controller designs. Three different controller design concepts were simulated using the model: 1) Controllers with parasitic direct current loading. 2) Controllers with parasitic alternating current loading. 3) Controllers that maintain a reference current. The free-piston Stirling convertor is an electromechanical device that operates at resonance. It is the function of the electronic load controller to ensure that the electrical load seen by the machine is always great enough to keep the amplitude of the piston and alternator oscillation at the rated value. This is done by regulating the load on the output bus. The controller monitors the instantaneous voltage, regulating it by switching loads called parasitic loads onto the bus whenever the bus voltage is too high and removing them whenever the voltage is too low. In the first type of controller, the monitor-ing and switching are done on the direct-current (dc) bus. In the second type, the alternating current bus is used. The model allows designers to test a controller concept before investing time in hardware. The simulation code used to develop the model also offers detailed models of digital and analog electronic components so that the resulting designs are realistic enough to translate directly into hardware circuits.

Regan, Timothy F.↗
NASA NTRS1990

Structure and evolution of irradiated accretion disks. I - Static thermal equilibrium structure. II - Dynamical evolution of a thermally unstable torus

The thermal equilibrum structure and dynamical behavior of externally irradiated accretion disks are investigated. For radiative disks only the surface layer is heated, while for convective disks the heat penetrates deeply into the disk. For sufficiently strong radiation and given irradiation flux F(irr), the disk is completely stabilized against thermal instabilities of the sort invoked to explain dwarf novae. For moderately strong irradiation there is still an unstable branch in the thermal equilibrium curve. In typical soft X-ray transients, the disk is unstable against the dwarf-nova type instability. Fixed F(irr) on accretion disk annuli reduces the amplitude and the quiescent times and increases the outburst duration of the resultant light curves. Varying F(irr) in proportion to the mass accretion rate at the disks's inner edge results in light curves with a plateau in the decay from outbursts. In the case when irradiation is suddenly switched on, a temperature inversion results which leads to the formation of an accretion corona.

Tuchman, Y.↗
NASA NTRS2003

Electronic Components and Circuits for Extreme Temperature Environments

Planetary exploration missions and deep space probes require electrical power management and control systems that are capable of efficient and reliable operation in very low temperature environments. Presently, spacecraft operating in the cold environment of deep space carry a large number of radioisotope heating units in order to maintain the surrounding temperature of the on-board electronics at approximately 20 C. Electronics capable of operation at cryogenic temperatures will not only tolerate the hostile environment of deep space but also reduce system size and weight by eliminating or reducing the radioisotope heating units and their associate structures; thereby reducing system development as well as launch costs. In addition, power electronic circuits designed for operation at low temperatures are expected to result in more efficient systems than those at room temperature. This improvement results from better behavior and tolerance in the electrical and thermal properties of semiconductor and dielectric materials at low temperatures. The Low Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electrical components, circuits, and systems suitable for applications in the aerospace environment and deep space exploration missions. Research is being conducted on devices and systems for reliable use down to cryogenic temperatures. Some of the commercial-off-the-shelf as well as developed components that are being characterized include switching devices, resistors, magnetics, and capacitors. Semiconductor devices and integrated circuits including digital-to-analog and analog-to-digital converters, DC/DC converters, operational amplifiers, and oscillators are also being investigated for potential use in low temperature applications. An overview of the NASA Glenn Research Center Low Temperature Electronic Program will be presented in this paper. A description of the low temperature test facilities along with selected data obtained through in-house component and circuit testing will also be discussed. Ongoing research activities that are being performed in collaboration with various organizations will also be presented.

Patterson, Richard L.↗
NASA NTRS2008

Electronic Components for use in Extreme Temperature Aerospace Applications

Electrical power management and control systems designed for use in planetary exploration missions and deep space probes require electronics that are capable of efficient and reliable operation under extreme temperature conditions. Space-based infra-red satellites, all-electric ships, jet engines, electromagnetic launchers, magnetic levitation transport systems, and power facilities are also typical examples where the electronics are expected to be exposed to harsh temperatures and to operate under severe thermal swings. Most commercial-off-the-shelf (COTS) devices are not designed to function under such extreme conditions and, therefore, new parts must be developed or the conventional devices need to be modified. For example, spacecraft operating in the cold environment of deep space carry a large number of radioisotope heating units in order to maintain the surrounding temperature of the on-board electronics at approximately 20 C. At the other end, built-in radiators and coolers render the operation of electronics possible under hot conditions. These thermal measures lead to design complexity, affect development costs, and increase size and weight. Electronics capable of operation at extreme temperatures, thus, will not only tolerate the hostile operational environment, but also make the overall system efficient, more reliable, and less expensive. The Extreme Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electronics suitable for applications in the aerospace environment and deep space exploration missions. Research is being conducted on devices, including COTS parts, for potential use under extreme temperatures. These components include semiconductor switching devices, passive devices, DC/DC converters, operational amplifiers, and oscillators. An overview of the program will be presented along with some experimental findings.

Patterson, Richard L.↗
NASA NTRS2002

Cryogenic Electronics Being Developed for Space Operation

Planetary exploration missions and deep space probes require electrical power management and control systems that can operate efficiently and reliably in very low temperature environments. Presently, spacecraft operating in the cold environment of deep space carry a large number of radioisotope heating units to maintain the surrounding temperature of the onboard electronics at approximately 20 C. Electronics capable of operation at cryogenic temperatures would not only tolerate the hostile environment of deep space but also reduce system size and weight by eliminating or reducing the radioisotope heating units and their associate structures. Thereby, such electronics would reduce system development as well as launch costs. In addition, power electronic circuits designed for operation at low temperatures are expected to result in more efficient systems than those at room temperature. This improvement results because semiconductor and dielectric materials have better behavior and tolerance in their electrical and thermal properties at low temperatures. The Low Temperature Electronics Program at the NASA Glenn Research Center is focusing on the research and development of electrical components, circuits, and systems suitable for applications in the aerospace environment and in deep space exploration missions. Research is being conducted on devices and systems for reliable use down to cryogenic temperatures. Some of the commercial off-the-shelf as well as developed components that are being characterized include semiconductor switching devices, resistors, magnetics, and capacitors. Semiconductor devices and integrated circuits including digital-to-analog and analog-to-digital converters, dc-dc converters, operational amplifiers, and oscillators are also being investigated for potential use in low-temperature applications. For example, the output response of an advanced oscillator at room temperature and at -190 C is shown. Most oscillators can operate at temperatures down to only -55 C. It can be seen that, for this oscillator, the low temperature of -196 C changed the leading and trailing edges of the oscillator pulses by producing overshoot. The research and development efforts performed under the Low Temperature Electronics Program at Glenn are being carried out through collaboration with other Government agencies, industrial and aerospace companies, and academia. The program supports missions as well as technology development efforts at NASA's Goddard Space Flight Center and Langley Research Center, and the Jet Propulsion Laboratory.

Patterson, Richard L.↗
NASA NTRS2012

Passively Q-switched side pumped monolithic ring laser

Disclosed herein are systems and methods for generating a side-pumped passively Q-switched non-planar ring oscillator. The method introduces a laser into a cavity of a crystal, the cavity having a round-trip path formed by a reflection at a dielectrically coated front surface, a first internal reflection at a first side surface of the crystal at a non-orthogonal angle with the front, a second internal reflection at a top surface of the crystal, and a third internal reflection at a second side surface of the crystal at a non-orthogonal angle with the front. The method side pumps the laser at the top or bottom surface with a side pump diode array beam and generates an output laser emanating at a location on the front surface. The design can include additional internal reflections to increase interaction with the side pump. Waste heat may be removed by mounting the crystal to a heatsink.

Li, Steven X.↗
NASA NTRS1996

Silicon Carbide High-Temperature Power Rectifiers Fabricated and Characterized

The High Temperature Integrated Electronics and Sensors (HTIES) team at the NASA Lewis Research Center is developing silicon carbide (SiC) for use in harsh conditions where silicon, the semiconductor used in nearly all of today's electronics, cannot function. Silicon carbide's demonstrated ability to function under extreme high-temperature, high power, and/or high-radiation conditions will enable significant improvements to a far ranging variety of applications and systems. These improvements range from improved high-voltage switching for energy savings in public electric power distribution and electric vehicles, to more powerful microwave electronics for radar and cellular communications, to sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. In the case of jet engines, uncooled operation of 300 to 600 C SiC power actuator electronics mounted in key high-temperature areas would greatly enhance system performance and reliability. Because silicon cannot function at these elevated temperatures, the semiconductor device circuit components must be made of SiC. Lewis' HTIES group recently fabricated and characterized high-temperature SiC rectifier diodes whose record-breaking characteristics represent significant progress toward the realization of advanced high-temperature actuator control circuits. The first figure illustrates the 600 C probe-testing of a Lewis SiC pn-junction rectifier diode sitting on top of a glowing red-hot heating element. The second figure shows the current-versus voltage rectifying characteristics recorded at 600 C. At this high temperature, the diodes were able to "turn-on" to conduct 4 A of current when forward biased, and yet block the flow of current ($quot;turn-off") when reverse biases as high as 150 V were applied. This device represents a new record for semiconductor device operation, in that no previous semiconductor electronic device has ever simultaneously demonstrated 600 C functionality, and 4-A turn-on and 150-V rectification. The high operating current was achieved despite severe device size limitations imposed by present-day SiC wafer defect densities. Further substantial increases in device performance can be expected when SiC wafer defect densities decrease as SiC wafer production technology matures.

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