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Results for “Gallium arsenide”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
NASA NTRS1975

Electrical characterization of GaAs single crystal in direct support of M555 flight experiment

The exploration of several nondestructive methods of electrical characterization of semiconductor single crystals was carried out during the period ending May 1974. Two methods of obtaining the microwave skin depth, one for the mapping flat surfaces and the other for analyzing the whole surface of small single crystal wafers, were developed to the stage of working laboratory procedures. The preliminary 35 GHz data characterizing the two types of space-related single crystal surfaces, flat slices of gallium arsenide and small wafers of germanium selenide, are discussed. A third method of nondestructive mapping of donor impurity density in semiconductor surfaces by scanning with a light beam was developed for GaAs; its testing indicates reasonable precision at reasonable scan rates for GaAs surfaces at room temperature.

Castle, J. G.↗
NASA NTRS1975

Electrical characterization of GaAs single crystal in direct support of M555 flight experiment

An exploration of several nondestructive methods of electrical characterization of semiconductor single crystals was carried out. Two methods of obtaining the microwave skin depth, one for mapping flat surfaces and the other for analyzing the whole surface of small single crystal wafers, were developed to the stage of working laboratory procedures. The preliminary 35 GHz data characterizing the two types of space related single crystal surfaces, flat slices of gallium arsenide and small wafers of germanium selenide, are discussed. A third method of nondestructive mapping of donor impurity density in semiconductor surfaces by scanning with a light beam was developed for GaAs; its testing indicates reasonable precision at reasonable scan rates for GaAs surfaces at room temperature.

Castle, J. G.↗
NASA NTRS1975

The AMOS cell - An improved metal-semiconductor solar cell

A new fabrication process is being developed which significantly improves the efficiency of metal-semiconductor solar cells. The resultant effect, a marked increase in the open-circuit voltage, is produced by the addition of an interfacial layer oxide on the semiconductor. Cells using gold on n-type gallium arsenide have been made in small areas (0.17 sq cm) with conversion efficiencies of 15% in terrestrial sunlight.

Stirn, R. J.↗
NASA NTRS1976

A comparison of GaAs and Si hybrid solar power systems

An analytical comparison of energy output from various silicon and gallium arsenide hybrid solar power systems, producing electric power and also thermal power for heating or cooling, is made. System performance indices in terms of capital cost, peak power, total power output, and electric power were evaluated. Limiting values for annual energy production from GaAs and Si solar concentrator systems were estimated to be 2 cents and 6.8 cents per kWh for GaAs concentrator systems and between 2.5 cents and 11 cents per kWh for Si concentrator systems.

Heinbockel, J. H.↗
NASA NTRS1977

Analysis of GaAs and Si solar energy hybrid systems

Various silicon hybrid systems are modeled and compared with a gallium arsenide hybrid system. The hybrid systems modeled produce electric power and also thermal power which can be used for heating or air conditioning. Various performance indices are defined and used to compare the system performance: capital cost per electric power out; capital cost per total power out; capital cost per electric power plus mechanical power; annual cost per annual electric energy; and annual cost per annual electric energy plus annual mechanical work. These performance indices indicate that concentrator hybrid systems can be cost effective when compared with present day energy costs.

Heinbockel, J. H.↗
NASA NTRS1976

Errors in short circuit measurements due to spectral mismatch between sunlight and solar simulators

Errors in short circuit current measurement were calculated for a variety of spectral mismatch conditions. The differences in spectral irradiance between terrestrial sunlight and three types of solar simulator were studied, as well as the differences in spectral response between three types of reference solar cells and various test cells. The simulators considered were a short arc xenon lamp AMO sunlight simulator, an ordinary quartz halogen lamp, and an ELH-type quartz halogen lamp. Three types of solar cells studied were a silicon cell, a cadmium sulfide cell and a gallium arsenide cell.

Curtis, H. B.↗
NASA NTRS1977

Cameras for semiconductor process control

The application of X-ray topography to semiconductor process control is described, considering the novel features of the high speed camera and the difficulties associated with this technique. The most significant results on the effects of material defects on device performance are presented, including results obtained using wafers processed entirely within this institute. Defects were identified using the X-ray camera and correlations made with probe data. Also included are temperature dependent effects of material defects. Recent applications and improvements of X-ray topographs of silicon-on-sapphire and gallium arsenide are presented with a description of a real time TV system prototype and of the most recent vacuum chuck design. Discussion is included of our promotion of the use of the camera by various semiconductor manufacturers.

Porter, W. A.↗
NASA NTRS1978

Long-term radiation effects on GaAs solar cell characteristics

This report investigates preliminary design considerations which should be considered for a space experiment involving Gallium Arsenide (GaAs) solar cells. The electron radiation effects on GaAs solar cells were conducted in a laboratory environment, and a statistical analysis of the data is presented. In order to augment the limited laboratory data, a theoretical investigation of the effect of radiation on GaAs solar cells is also developed. The results of this study are empirical prediction equations which can be used to estimate the actual damage of electrical characteristics in a space environment. The experimental and theoretical studies also indicate how GaAs solar cell parameters should be designed in order to withstand the effects of electron radiation damage.

Heinbockel, J. H.↗
NASA NTRS1980

Limiting amplifier for microwaves

Limiting amplifier, using gallium arsenide field effect transistor (FET), delivers constant-amplitude drive signal to KU-band traveling wave tube (TWT) thus preventing distortion in output from TWT.

Owens, J. N.↗
NASA NTRS1980

Scratch encourages selective doping

Dislocations induced by scratching produce deep narrow spikes of zinc diffused in gallium arsenide. Density of defects formed locally increases zinc diffusion coefficient. Enhancements by factor of 6 have been observed. Technique works for other dopants than zinc and for other semiconductors besides GaAs.

Hawrylo, F. Z.↗
NASA NTRS1978

Military needs for orbital power

Results of the DoD/ERDA (now Department of Energy) Space Power Study completed in October 1977 are presented. The major new thrust of Air Force Advanced Technology Plans center on the development of military solar power systems which will extend capabilities to the 10 - 50 KW sub e power range for new classes of missions while maintaining technology applicability to the 0.5 - 10 KW sub e present mission class. The status of FY78 efforts for Project 682J (Air Force Space Power Advanced Development Program) are reported. Project 682J is divided into the following tasks: (1) high efficiency solar panel; (2) nickel-hydrogen battery; (3) gallium arsenide solar concentrator hardness study; and (4) new-start nuclear dynamic power system applications/integration study.

Massie, L. D.↗
NASA NTRS1979

Industrialization study, phase 2

The potentials and requirements of advanced photovoltaic technologies still in their early developmental stages were evaluated and compared to the present day single crystal silicon wafer technology and to each other. The major areas of consideration include polycrystalline and amorphous silicon, single crystal and polycrystalline gallium arsenide, and single crystal and polycrystalline cadmium sulfide. A rank ordering of the advanced technologies is provided. The various ranking schemes were based upon present-day efficiency levels, their stability and long-term reliability prospects, material availability, capital investments both at the laboratory and production level, and associated variable costs. An estimate of the timing of the possible readiness of these advanced technologies for technology development programs and industrialization is presented along with a set of recommended government actions concerning the various advanced technologies.

Source record↗
NASA NTRS1979

Nephelometer evaluation for measurement of cloud parameters in earth and planetary atmospheres

Initial work was concerned with determining whether the radiation emitted from a laser source could be sufficiently collimated to provide a suitable source for a nephelometer-type instrument. It was necessary to develop a standard scatterer that could be used to evaluate the performance of a nephelometer. The possible use of a gallium arsenide diode as a radiation source also was investigated. The first of these utilized a single lens to focus the light scattered from a target onto a ring detector. The second configuration used reflecting and refracting axicons as optical-system elements. The work performed in each of these areas is described.

Ballard, G. S.↗
NASA NTRS1969

Method for the preparation of inorganic single crystal and polycrystalline electronic materials

Large area, semiconductor crystals selected from group 3-5 compounds and alloys are provided for semiconductor device fabrication by the use of a selective etching operation which completely removes the substrate on which the desired crystal was deposited. The substrate, selected from the same group as the single crystal, has a higher solution rate than the epitaxial single crystal which is essentially unaffected by the etching solution. The preparation of gallium phosphide single crystals using a gallium arsenide substrate and a concentrated nitric acid etching solution is described.

Groves, W. O.↗
NASA NTRS1979

Satellite Power Systems (SPS) concept definition study, exhibit C. Volume 6: In-depth element investigation

Computer assisted design of a gallium arsenide solid state dc-to-RF converter with supportive fabrication data was investigated. Specific tasks performed include: computer program checkout; amplifier comparisons; computer design analysis of GaSa solar cells; and GaAs diode evaluation. Results obtained in the design and evaluation of transistors for the microwave space power system are presented.

Hanley, G.↗