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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Color center in β -Ga 2 O 3 emitting at the telecom range

Transition metal (TM) ions incorporated into a host from a wide bandgap semiconductor are recognized as a promising system for quantum technologies with enormous potential. In this work, we report on a TM color center in β-Ga 2 O 3 with physical properties attractive for quantum information applications. The center is found to emit at 1.316 μm and exhibits weak coupling to phonons, with optically addressable higher-lying excited states, beneficial for single-photon emission within the telecom range (O-band). Using magneto-photoluminescence (PL) complemented by time-resolved PL measurements, we identify the monitored emission to be internal 1 E→ 3 A 2 spin-forbidden transitions of a 3d 8 TM ion with a spin-triplet ground state—a possible candidate for a spin qubit. We tentatively attribute this color center to a complex involving a sixfold coordinated Cu 3+ ion.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Origin of proton irradiation-induced deep acceptors in Al 0.70 Ga 0.30 N

Deep level defect introduction and carrier removal were characterized using steady-state photocapacitance (SSPC), deep level transient spectroscopy (DLTS) and lighted capacitance–voltage for proton irradiated n-type Al 0.70 Ga 0.30 N Schottky diodes grown by metal-organic vapor phase epitaxy on AlN-on-sapphire templates. SSPC observed deep levels in the as-grown diode with zero-phonon transition energies of 2.20, 2.65, 3.10, 3.40, and 4.65 eV relative to the conduction band minimum (E c ), and an additional deep level emerged at 1.20 eV with irradiation. Lighted capacitance–voltage measurements quantified the deep level concentration (N t ) of states detected by SSPC, and it was observed that N t increased with proton fluence only for the 1.2 and 4.65 eV levels. Carrier removal was much larger than the increase in N t of the 1.2 and 4.65 eV deep levels, suggesting that radiation-induced deep level compensators existed beyond what was detected with SSPC. DLTS detected additional, proton-induced deep acceptors at E c —0.55, 0.82, and 1.16 eV, the latter of which is likely the same 1.20 eV deep state observed by SSPC. The concentration of the E c —0.82 eV defect state was large enough to reconcile carrier removal with total deep level introduction. Comparing the E c —0.82 and 1.16 eV deep acceptor levels to previous experimental and theoretical reports suggests that their atomistic origins could be the nitrogen vacancy (V N ) and oxygen substituting on the nitrogen sub-lattice (O N ), respectively. This defect behavior contrasts starkly with GaN, where V N and O N are shallow donors, and demonstrates that the electronic properties of defects can evolve drastically within the AlGaN alloy system ranging from wide bandgap GaN to ultra-wide bandgap AlN.

Armstrong, Andrew Michael [Sandia National Laborat↗
DOE OSTI2026

Intrinsic emittance properties of an Fe-doped β-Ga 2 O 3 (010) photocathode: Ultracold electron emission at 300 K and the polaron self-energy

Measurements of the spectral emission properties of an iron-doped a β-Ga 2 O 3 (010) photocathode at 300 K reveal the presence of an ultracold contribution to the total electron beam emission with a 6 meV mean transverse energy (MTE) in the 3.5–4.4 eV photon energy range (282–354 nm). This extreme sub-thermal photoemission signal is consistent with direct emission of electrons photoexcited from the Fe dopant states into the low effective mass and positive electron affinity primary conduction band, and it is superimposed on a stronger signal with a larger MTE associated with an (optical)phonon-mediated momentum-resonant Franck–Condon (FC) emission process from a thermally populated and negative electron affinity upper conduction band. For photon energies above 4.5 eV, a transition from a long to a short transport regime is forced by an absorption depth reduction to below 100 nm and both MTE signals exhibit spectral trends consistent with phonon-mediated FC emission if the polaron formation self-energy is included in the temperature of the initial thermalized photoexcited electron distribution.

Angeloni, Louis A. [University of Illinois, Chicag↗
DOE OSTI2025

Completion of lunar magma ocean solidification at 4.43 Ga

Crystallization of the lunar magma ocean yielded a chemically unique liquid residuum named KREEP. This component is expressed as a large patch on the near side of the Moon and a possible smaller patch in the northwest portion of the Moon’s South Pole-Aitken basin on the far side. Thermal models estimate that the crystallization of the lunar magma ocean (LMO) could have spanned from 10 and 200 My, while studies of radioactive decay systems have yielded inconsistent ages for the completion of LMO crystallization covering over 160 My. Here, we show that the Moon achieved >99% crystallization at 4,429 ± 76 Ma, indicating a lunar formation age of ~4,450 Ma or possibly older. Using the 176 Lu– 176 Hf decay system (t 1/2 = 37 Gy), we found that the initial 176 Hf/ 177 Hf ratios of lunar zircons with varied U–Pb ages are consistent with their crystallization from a KREEP-rich reservoir with a consistently low 176 Lu/ 177 Hf ratio of 0.0167 that emerged ~140 My after solar system formation. The previously proposed younger model age of ~4.33 Ga for the source of mare basalts (240 My after solar system formation) might reflect the timing of a large impact. Our results demonstrate that lunar magma ocean crystallization took place while the Moon was still battered by planetary embryos and planetesimals leftover from the main stage of planetary accretion. The study of Lu–Hf model ages for samples brought back from the South Pole-Aitken basin will help to assess the lateral continuity of KREEP and further understand its significance in the early history of the Moon.

Science & Technology - Other Topics↗
DOE OSTI2022

Two methods to study inelastic neutron-scattering measurements based on ω n (q) versus S(q, ω) applied to the magnetic open honeycomb lattice Tb 2 Ir 3 Ga 9

This work describes two methods to fit the inelastic neutron-scattering spectrum S(q, ω) with wavevector q and frequency ω. The common and well-established method extracts the experimental spin-wave branches ω n (q) from the measured spectra S(q, ω) and then minimizes the difference between the observed and predicted frequencies. When n branches of frequencies are predicted but the measured frequencies overlap to produce only m < n branches, the weighted average of the predicted frequencies must be compared to the observed frequencies. A penalty is then exacted when the width of the predicted frequencies exceeds the width of the observed frequencies. The second method directly compares the measured and predicted intensities S(q, ω) over a grid {q i , ω j } in wavevector and frequency space. After subtracting background noise from the observed intensities, the theoretical intensities are scaled by a simple wavevector-dependent function that reflects the instrumental resolution. Furthermore, the advantages and disadvantages of each approach are demonstrated by studying the open honeycomb material Tb 2 Ir 3 Ga 9 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Optical characterization of deep-level defects in n-type Al x In y Ga 1- x - y P for the development of solid-state photomultiplier analogs

Characterizing intrinsic defects is an essential step in evaluating materials for novel optoelectronic device applications. For photomultipliers, suppressing dark currents is critical, but a tradeoff is present between maximizing the band gap while remaining sensitive to the wavelength of interest and minimizing the incorporation of fresh defects by growing not-yet-optimized alloys. We present a series of capacitance-based measurements, including deep-level optical spectroscopy, steady-state photocapacitance, and illuminated capacitance-voltage, on photodiodes with lightly n-type Al x In y Ga 1−x−y P absorber regions. Several deep levels are identified, including one near the midgap. Although the inclusion of aluminum increases each trap density by approximately 10×, the hole capture cross-section also appears to decrease, suggesting that Shockley–Read–Hall dark currents may be suppressed. These materials may be good candidates for the development into silicon photomultiplier analogs with a wider bandgap for scintillator applications.

III–V↗
DOE OSTI2026

High-spin states in 60 Cu and implications for states in the mirror nucleus 60 Ga

High-spin states in 60 Cu are investigated on the basis of reaction-channel-selected 𝛾-ray spectroscopy. Data stem from three experiments that used the same fusion-evaporation reaction at similar beam energies. The Gammasphere 𝛾-ray spectrometer was combined with the Microball CsI(Tl) detector array and sets of liquid-scintillator neutron detectors which allowed us to identify and tag on evaporated light charged particles and neutrons, respectively. A level scheme is proposed which comprises more than 300 𝛾-ray transitions connecting more than 100 excited states. Predictions from cranked Nilsson-Strutinsky calculations describe the observed high-spin collective structures in 60 Cu. Predictions of shell-model calculations are probed with a suite of low- to medium-spin states of both parities. Taking into account isospin-symmetry-breaking terms in these calculations, a case study of the yrast line of the weakly bound mirror nucleus 60 Ga is presented.

Rudolph, Dirk [Lund University (Sweden)] (ORCID:00↗
DOE OSTI2022

Nanostructured $\mathrm{GaAs/(Al,Ga)As}$ Waveguide for Low-Density Polariton Condensation from a Bound State in the Continuum

Exciton-polaritons are hybrid light-matter states that arise from strong coupling between an exciton resonance and a photonic cavity mode. As bosonic excitations, they can undergo a phase transition to a condensed state that can emit coherent light without a population inversion. This aspect makes them good candidates for thresholdless lasers, yet short exciton-polariton lifetime has made it difficult to achieve condensation at very low power densities. In this sense, long-lived symmetry-protected states are excellent candidates to overcome the limitations that arise from the finite mirror reflectivity of monolithic microcavities. In this work we use a photonic symmetry-protected bound state in the continuum coupled to an excitonic resonance to achieve state-of-the-art polariton condensation threshold in a GaAs/(Al,Ga)As waveguide. Most important, we show the influence of fabrication control and how surface passivation via atomic layer deposition provides a way to reduce exciton quenching at the grating sidewalls.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2021

Canted antiferromagnetic order and spin dynamics in the honeycomb-lattice compound Tb 2 Ir 3 Ga 9

Here, single-crystal neutron diffraction, inelastic neutron scattering, bulk magnetization measurements, and first-principles calculations are used to investigate the magnetic properties of the honeycomb lattice Tb 2 Ir 3 Ga 9 . While the R ln 2 magnetic contribution to the low-temperature entropy indicates a J eff = 1 / 2 moment for the lowest-energy crystal-field doublet, the Tb 3 + ions form a canted antiferromagnetic structure below 12.5 K. Due to the Dzyaloshinskii-Moriya interactions, the Tb moments in the a b plane are slightly canted towards b with a canted moment of 1.22 μ B per formula unit. A minimal x x z spin Hamiltonian is used to simultaneously fit the spin-wave frequencies along the high-symmetry directions and the field dependence of the magnetization along the three crystallographic axes. Long-range magnetic interactions for both in-plane and out-of-plane couplings up to the second nearest neighbors are needed to account for the observed static and dynamic properties. The z component of the exchange interactions between Tb moments is larger than the x and y components. This compound also exhibits bond-dependent exchange with negligible nearest-neighbor exchange coupling between moments parallel and perpendicular to the 4 f orbitals. Despite the J eff = 1 / 2 moments, the spin Hamiltonian is denominated by a large in-plane anisotropy K z ~ – 1 meV . DFT calculations confirm the antiferromagnetic ground state and the substantial interplane coupling at larger Tb-Tb distances.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Single-ion anisotropy is necessary and appropriate to study the magnetic behavior of ${\mathrm{Tb}}^{3+}$ moments with ${J}_{\text{eff}}=\frac{1}{2}$ on the honeycomb lattice in ${\mathrm{Tb}}_{2}{\mathrm{Ir}}_{3}{\mathrm{Ga}}_{9}$

By developing models of increasing complexity, we show that a model without single-ion anisotropy (SIA) cannot explain the magnetic properties of J eff = 1 / 2 Tb 3+ moments in the orthorhombically distorted, honeycomb material Tb 2 Ir 3 Ga 9 . In four different models for the magnetization of a single honeycomb layer, the only sources of anisotropy are symmetric exchange interactions J nαβ = J nβα along three different bonds n , an anisotropic $\underline{g}$ tensor, and a Dzyalloshinskii-Moriya interaction (asymmetric exchange) that produces the observed canted moment along b . With 21 parameters, the best such model yields χ 2 = 0.065 , which is substantially smaller than χ 2 = 0.112 obtained using a Heisenberg model containing six parameters including easy-axis anisotropy. However, models without SIA fail to reproduce the linear dependence of the magnetization with a field perpendicular to the Ising axis while predicting a saturation magnetization that is far too low. Due to the complex crystal-field environments, we argue that SIA is necessary to study low-symmetry, three-dimensional J eff = 1 / 2 materials containing Tb 3+ ions.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Spin spiral and topological Hall effect in Fe 3 Ga 4

A new mechanism for the topological Hall effect (THE) was recently proposed for the spiral magnet YMn 6 Sn 6 , which requires transverse conical spiral magnetism, induced by external magnetic field, combined with thermally excited helical spiral magnons. In principle, this mechanism should be applicable to other itinerant spiral magnets as well. Here, we show that another magnetic compound, Fe 3 Ga 4 , in which THE was observed experimentally before, in one of its phases satisfies this condition, and the proposed theory of thermal-fluctuation-driven THE is quantitatively consistent with the experiment. This finding suggests that this mechanism is indeed rather universal, and the effect may have been observed in other compounds before but overlooked.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Correlation between complex spin textures and the magnetocaloric and Hall effects in Eu⁢(Ga 1−𝑥 ⁢Al 𝑥 ) 4 (𝑥=0.9, 1)

Determining the electronic phase diagram of a quantum material as a function of temperature (𝑇) and applied magnetic field (𝐻) forms the basis for understanding the microscopic origin of transport properties, such as the anomalous Hall effect (AHE) and topological Hall effect (THE). For many magnetic quantum materials, including Eu⁢Al 4 , a THE arises from a topologically protected magnetic skyrmion lattice with a nonzero scalar spin chirality. We identified a square skyrmion lattice (sSkL) peak in Eu⁢(Ga 1−𝑥 ⁢Al 𝑥 ) 4 (𝑥=0.9) identical to the peak previously observed in Eu⁢Al 4 by performing neutron-scattering measurements throughout the phase diagram. Here, comparing these neutron results with transport measurements, we found that in both compounds the maximal THE does not correspond to the sSkL area. Instead of the maximal THE, the maximal magnetocaloric-effect boundaries better identify the sSkL lattice phase observed by neutron-scattering measurements. The maximal THE therefore arises from interactions of itinerant electrons with frustrated spin fluctuations in a topologically trivial magnetic state.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Total absorption spectroscopy for the 𝛽 + decay strength distribution of 60 Ga

𝛽-decay properties play an important role in most astrophysical processes. In the absence of experimental data, astrophysical models rely on global theoretical calculations to provide the relevant properties. It is therefore important to provide strong experimental constraints when possible. In the case of 𝛽-decay, the most sensitive probe is the 𝛽-decay strength distribution. We report here on the first measurement of the latter quantity for the 𝛽 + decay of 60 Ga using the total absorption spectroscopy technique. The experimental results are compared to theoretical calculations often used in astrophysical models, namely the shell model and the quasiparticle random phase approximation (QRPA), as well as an extension of QRPA that includes higher-order nucleonic calculations. Both models are in reasonable agreement with the experimental results.

59 ≤ A ≤ 89↗
DOE OSTI2021

Antiferro- and metamagnetism in the S = 7 / 2 hollandite analog Eu Ga 2 Sb 2

Recent work analyzing the impact of nonsymmorphic symmetries on electronic states has given rise to the discovery of multiple types of topological matter. Here we report the single-crystal synthesis and magnetic properties of Eu Ga 2 Sb 2 , a Eu-based antiferromagnet structurally consisting of pseudo-1D chains of Eu ions related by a nonsymmorphic glide plane. Here we find the onset of antiferromagnetic order at T N = 8K. Above T N the magnetic susceptibility is isotropic. Curie-Weiss analysis suggests competing ferromagnetic and antiferromagnetic interactions, with p eff = 8.1 μ B as expected for 4f 7 J = S = 7/2 Eu 2+ ions. Below T N and at low applied magnetic fields, an anisotropy develops linearly, reaching χ ⊥ /χ ∥ = 6 at T = 2K. There is concomitant metamagnetic behavior along χ ∥ , with a magnetic field of μ 0 H ≈ 0.5 T sufficient to suppress the anisotropy. Independent of crystal orientation, there is a continuous evolution to a field-polarized paramagnetic state with M = 7μ B /Eu 2+ at μ 0 H = 2 T as T → 0 K. Specific-heat measurements show a recovered magnetic entropy of ΔS mag ≈ 16.4 Jmol –1 K –1 from T ~ 0 K to T = T N , close to the expected value of R ln(8) for an S = 7/2 ion, indicating negligible low-dimensional spin fluctuations above T N . We find no evidence of unusual behaviors arising either from the dimensionality or the presence of the nonsymmorphic symmetries.

1-dimensional spin chains↗
DOE OSTI2023

Enhanced magnetostriction through dilute Ce doping of Fe-Ga

Doping of magnetostrictive galfenol (Fe 82 Ga 18 , in at.%) with rare-earth elements significantly enhances magnetostriction, with the largest gains achieved in textured melt-spun ribbons. Here, it is demonstrated that even extremely dilute Ce, as little as 65 ppm, can double the magnetostrictive response of galfenol when coupled with an appropriate heat treatment. This improvement is correlated with a compression of the host lattice, both of which reach their maximum extent at the calculated solubility limit of Ce in in body-centered cubic (bcc) galfenol, ~ 50 ppm. Beyond this point, excess Ce segregates into CeGa 2 , which forms an interdendritic network throughout the sample at high Ce levels and cannot be resolutionized through heat treatments. These findings point to the importance of solubility limits (i.e., equilibrium thermodynamics) in determining appropriate doping levels or heat treatment couples to optimize magnetostrictive performance, confirming that overdoping is actively detrimental to both material properties and cost.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Evaluating Recombination Mechanisms in RbF Treated Cu(In${}_\mathrm{x}$Ga$_\mathrm{1-x}$)Se$_{2}$ Solar Cells

Rubidium fluoride (RbF) postdeposition treatment (PDT) has been shown to improve the performance of Cu(In x Ga 1-x )Se 2 (CIGS) photovoltaic devices. Here, in this study, temperature-dependent current voltage (JVT) and time-resolved photoluminescence (TRPL) experiments were combined with modeling using the solar cell capacitance simulator (SCAPS) computer code to investigate the effect of the RbF PDT. Two devices, one as-deposited and one with RbF PDT, were deposited by a three stage coevaporation process. JVT measurements suggest the dominant recombination mechanism may be tunneling-enhanced recombination via bandtail states, but that defect states in the bandgap can also be important. RbF PDT is shown to decrease the characteristic energy of the bandtails. TRPL data show an increase in the minority carrier lifetime after RbF PDT, leading to an improved open-circuit voltage. SCAPS modeling indicates that the dominant recombination mechanism is dependent on the specific defect makeup of a device, suggesting that small changes in processing conditions can impact device behavior. This explains the observation that, for some devices, defect states in the gap dominate while others, as is the case here, appear to be dominated by bandtails.

14 SOLAR ENERGY↗
DOE OSTI2022

High-Rate and Low-Temperature Fabrication of Cu(In,Ga)Se 2 Solar Cells Using AgBr Induced Recrystallization

We present results demonstrating a three-stage, high-rate, low-temperature deposition process for Cu(In,Ga)Se 2 solar cells including a recrystallization step after the second stage, catalyzed by AgBr. The entire deposition and recrystallization process takes place below 450 °C in less than 15 min. Device results with efficiencies exceeding 16% are shown. Here, we achieve very high levels of grain growth and a greater than a 5% absolute increase in device performance because of the recrystallization step relative to an identical process not involving AgBr.

14 SOLAR ENERGY↗
DOE OSTI2020

In-situ Microscopy Characterization of Cu(In,Ga)Se2 Potential-Induced Degradation

We report on the role of sodium in potentialinduced degradation (PID) of Cu(In, Ga)Se 2 (CIGS) solar cells. In-situ microscopy characterizations on AFM platform were performed on two stressed CIGS device under room temperature (RT) and high temperature (HT) at 85 degrees C. During PID stressing we observed depletion region gets wider as Na migrates, p-n junction becomes leaky at RT for over a month; and similar junction evolution was observed for HT-stressed sample, eventually the junction collapsed after 18 hours. The diode behaviors were confirmed by dark I-V measurement. Time-of Flight secondary-ion mass spectrometry reveals that the Na accumulates on ZnO and CdS side, as well as the upper layer of CIGS layer. The results indicate that Na drifted by the voltage applied on the soda-lime glass, then diffuse through the whole device. And the sodium profiles have different points of evolution due to the temperature differences between the two stressed samples. The consistent results unambiguously show how Na from substrate glass causes PID in CIGS solar cells.

14 SOLAR ENERGY↗