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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

Visible GaAs/0.7/P/0.3/ CW heterojunction lasers

The paper reports the first low-threshold red-light-emitting heterojunction laser diodes consisting of lattice-matched Ga(As,P)/(In,Ga)P heteroepitaxial layers. A room-temperature threshold current of 3400 A/sq cm was obtained at a wavelength of about 7000 A; this value is substantially lower than those achieved at this wavelength with (Al,Ga)As lasers. For the first time, continuous-wave laser operation at temperatures as high as 10 C has been obtained for GaAs(1-x)P(x).

Kressel, H.↗
NASA NTRS1977

Pallasites - Metal composition, classification and relationships with iron meteorites

A comparative study was conducted of the metal composition of 34 pallasites in order to shed further light on the origin of these meteorites. Concentrations of Au, As, Co, Ga, Ge, Ir, Ni, and W in pallasitic metal were determined. Most pallasites are found to have similar compositions indicating a close genetic relationship, and are designated as main group. The Eagle Station Trio is unrelated to the main group as indicated by higher Ni, Ge, and Ir and lower As, Au, and Ga contents in the metal, and olivine richer in Fe and Sc and poorer in Mg and Mn. The trio of Springwater, Rawlinna and Phillips County have metal compositions appropriate to high-Ni main group members, but their fayalite contents suggest they are not closely related to it. Pavlodar and Glorieta Mountain appear to be unique pallasites, and Brenham an anomalous main group member. Krasnoyarsk is classified as a main group member. Main group pallasites have metal compositions which overlap those of IIIAB iron meteorites on a Ga-Ge plot, and they have similar Au, As, Cr, Ir, Ni and W contents to high-Ni IIIAB irons.

Scott, E. R. D.↗
NASA NTRS1977

Efficiency calculations for Al/x/Ga/1-x/As-GaAs heteroface solar cells

A computer-assisted analysis of the Al(x)Ga(1-x)As-GaAs heteroface solar cell is done to find the dependence of cell efficiency on substrate doping level. Assumptions for carrier lifetime needed for the evaluation of efficiency are based on measurements of experimental Al(x)Ga(1-x)As-GaAs heteroface cells. The results show the doping range 10 to the 16th-17th power per cu cm to be the best for heteroface solar cells. Calculations based on a three-halves temperature dependence for lifetimes agree well with early experimental efficiency versus temperature measurements on GaAs cells, but conflict with earlier results for an Al(x)Ga(1-x)As-GaAs heteroface cell.

Sekela, A. M.↗
NASA NTRS1977

Auger depth profiling of Au-Al/x/Ga/1-x/As interfaces and LPE Al/x/Ga/1-x/As-GaAs heterojunctions

An attempt is made to report Auger depth profiles produced in a UHF ion-milling Auger system for intentionally 'graded' Al(x)Ga(1-x)As-GaAs heterojunctions, 'abrupt' growth heterojunctions of the same material, and Au-Al(x)Ga(1-x)As interfaces. It is found that the interface widths of the 'abrupt' growth heterojunctions did not fluctuate greatly from an average value of 110 A and that 'graded' growth samples had interface widths of about 525 to 1500 A. The results for the Au-containing samples indicate that an oxide layer was present between the Au and the Al(x)Ga(1-x)As.

Garner, C. M.↗
NASA NTRS1977

Zn diffusion in Al/0.7/Ga/0.3/As compared with that in GaAs

Zinc was diffused into 4 times 10 to the 17th per cu cm n-type Al(0.7)Ga(0.3)As grown by liquid-phase epitaxy and also into n-type 2 times 10 to the 17th per cu cm doped GaAs slices at 600, 650, and 750 C. The Zn diffusion coefficient in the Al(0.7)Ga(0.3)As was about one order of magnitude larger than in GaAs. The significance of this fact is that diffusion of Zn through a 0.5 micron Al(0.7)Ga(0.3)As layer appears to be possible with adequate control of the junction depth in the underlying GaAs.

Flat, A.↗
NASA NTRS1983

Study to determine the IFR operational profile and problems of the general aviation single pilot

General aviation single pilot operating under instrument flight rules (GA SPIFR) was studied. The objectives of the study were to (1) develop a GA SPIFR operational profile, (2) identify problems experienced by the GA SPIFR pilot, and (3) identify research tasks which have the potential for eliminating or reducing the severity of the problems. To obtain the information necessary to accomplish these objectives, a mail questionnaire survey of instrument rated pilots was conducted. The general aviation IFR single pilot operational profile and selected data analysis examples are presented.

Weislogel, G. S.↗
NASA NTRS1983

Experimental investigations of trace element fractionation in iron meteorites. II - The influence of sulfur

The partitioning of Ir, Ge, Ga, W, Cr, Au, P, and Ni between solid metal and metallic liquid is investigated as a function of temperature and the S-concentration of the metallic liquid. The partition coefficients for siderophile elements, such as Ir, W, Ga, and Ge, are found to increase by factors of 10-100 as the S-concentration of the metallic liquid increases from 0-30 wt percent. Partition coefficients for other siderophile elements, such as Ni, Au, and P, increase by factors of only 2-3. In contrast, a decrease is seen in the partition coefficients for the more chalcophile element Cr. These experimentally determined coefficients are used in conjunction with a fractional crystallization model to reproduce the geochemical behavior of Ni, P, Au, and Ir during the magmatic evolution of groups IIAB, IIIAB, IVA and IVB iron meteorites. The mean S-concentration for each group increases in the order IVB, IVA, IIIAB, IIAB, which is in accordance with cosmochemical prediction. However, the geochemical behavior of Ge, Ga, W, and Cr cannot be reproduced in an internally consistent way. It is concluded that the magmatic histories of these iron meteorite groups are more complex than has been generally assumed.

Jones, J. H.↗
NASA NTRS1983

Structural variation of proterozoic dikes in central Superior Province: A possible reflection of post-Archean shield deformation

Preliminary work is reported on the use of two structural parameters, dike dip and thickness, as possible depth-of-exposure indicators in the Central Superior Province. The data demonstrate systematic variations in the dip and thickness of 2.6 and 1.14 Ga. dikes across the Central Superior Province and are tentatively interpreted to result from post intrusion deformation. Combination of these results with additional structural and paleomagnetic data from dikes of all gas may permit detailed mapping both spatially and temporally of crustal deformation in this part of the Canadian Shield. Although dike dip and thickness data apparently reflect crustal exposure level as given by host rock metamorphic grade (ranging from subgreenschist to granulite), these post-orogenic dikes themselves are at most only weakly metamorphosed. This requires that regional isotherms dropped dramatically after the Kenoran orogeny (2.65 Ga.) and prior to emplacement of the earlist post-orogenic swarm (Matachewan-Hearst) at 2.6 Ga.

Ernst, R. E.↗
NASA NTRS1983

GaInAs-AlInAs heterostructures for optical devices grown by MBE

The band gap of Ga(0.47)In(0.53)As corresponds to an emission wavelength of about 1.65 microns. Lasers have been produced with Al(0.48)In(0.52)As as cladding layers operating at room temperature. The peak emission of Ga(0.47)In(0.53)As can be continuously varied from 1.65 to 1.2 microns by the use of the multiquantum well structures. This range of wavelengths covers the minimum loss and dispersion in optical fibers and will be applicable to integrated optics. Double heterostructure broad area lasers have been fabricated using AlInAs as cladding layers to the GaInAs active layer. Room temperature threshold current densities of 4.3 kA/sq cm have been obtained for lasers with a 4500 A active region. The first data on GaInAs/AlInAs quantum well emitters will be presented. Photoluminescence of 4 K from quantum well layers of 100, 150, and 180 A with 150 A AlInAs barrier layers produced emission at 1.27, 1.35, and 1.41 microns, respectively. Ga(0.47)In(0.52)As quantum well LEDs have also been produced which emit at 1.34 microns.

Welch, D. F.↗
NASA NTRS1984

Electron mobility in modulation-doped heterostructures

A model for electron mobility in a two-dimensional electron gas confined in a triangular well was developed. All major scattering processes (deformation potential and piezoelectric acoustic, polar optical, ionized impurity, and alloy disorder) were included, as well as intrasubband and intersubband scattering. The model is applied to two types of modulation-doped heterostructures, namely GaAs-GaAlAs and In(0.53)Ga(0.47)As-Al(0.52)In(0.48)As. In the former case, phonons and remote ionized impurities ultimately limit the mobility, whereas in the latter, alloy disorder is a predominant scattering process at low temperatures. The calculated mobilities are in very good agreement with recently reported experimental characteristics for both GaAs-Ga(1-x)Al(x)As and In(0.53)Ga(0.47)As-Al(0.52)In(0.48)As modulation-doped heterostructures.

Walukiewicz, W.↗
NASA NTRS1986

Regional variation in the Amitsoq gneisses related to crustal levels during late Archean granulite facies metamorphism: Southern west Greenland

The dominant lithology at Kangimut sangmissoq is described as nebulitic tonalitic gneiss containing highly distended plagioclase phyric amphibolites. The gneiss amphibolite complex was intruded by Nuk gneiss between 3.05 and 2.90 Ga and later (2.6 to 2.7 Ga) by post granulite facies granitoid sheets. The amphibolites are though to be Ameralik dikes and the older gray gneiss are then Amitsoq by definition. The problem arises when the isotopic data are considered, none of which indicate rocks older that about 3.0 Ga.

Nutman, A. P.↗
NASA NTRS1986

Gallium-bearing sphalerite in a metal-sulfide nodule of the Qingzhen (EH3) chondrite

The composition and possible history of the Qingshen (EH3) chondrite is presented. The chondrite contains a population of spheroidal metal-sulfide nodules, which display textural evidence of reheating and melting. Evidence of metal sulfuration is also present, suggesting replacement of metal by sulfide during melting. This process has led to the nucleation of perryite along metal-sulfide interfaces. The Ga-bearing sphalerite that was found may have formed by injection of molten sulfide droplets into the metal followed by subsolidus diffusion of Ga from the metal into the sulfide. The latter may occur because of Ga supersaturation in the metal during progressive sulfuration and its decreased affinity for the metal phase during cooling below the taenite-kamacite transition point.

Rambaldi, E. R.↗
NASA NTRS1986

Effect of diamagnetic substitution on growth-induced anisotropy in (YBi)3Fe5O12

Films of (Y/3-x-y/Bi/x/Pb/y/)(Fe/5-z/Ga/z/)O12(Z = 0-1.1) and (Y/3-x-y/Bi/x/PB/y/)(Fe/5-w/In/w/)O12(w = 0-O.6) garnets were prepared by liquid-phase epitaxy. The effects of tetrahedral Ga and octahedral In substitution on the Bi-based growth-induced uniaxial anisotropy in (Ybi)3Fe5O12 films were measured. Both Ga and In resulted in a linear decrease in the anisotropy with increasing substitution. The effect of octahedral In was twice that of tetrahedral Ga.

Fratello, V. J.↗
NASA NTRS1987

Analysis of a range estimator which uses MLS angle measurements

A concept that uses the azimuth signal from a microwave landing system (MLS) combined with onboard airspeed and heading data to estimate the horizontal range to the runway threshold is investigated. The absolute range error is evaluated for trajectories typical of General Aviation (GA) and commercial airline operations (CAO). These include constant intercept angles for GA and CAO, and complex curved trajectories for CAO. It is found that range errors of 4000 to 6000 feet at the entry of MLS coverage which then reduce to 1000-foot errors at runway centerline intercept are possible for GA operations. For CAO, errors at entry into MLS coverage of 2000 feet which reduce to 300 feet at runway centerline interception are possible.

Downing, David R.↗
NASA NTRS1988

Changing styles of crustal growth in Southern Africa: Constraints from geochemical and Sr-Nd isotope studies in Archaean to Pan African terrains

Nd isotopic data was presented for southern Africa in support of episodic crustal growth. Over 50 percent of the continental crust there had formed before 2.5 Ga, and less than 10 percent was produced after about 1.0 Ga. The data imply a mean crustal age of about 2.4 Ga for southern Africa, and a higher rate of crustal growth than that derived from Australian shale data, particularly during the Proterozoic. Isotopic data from Damara metasediments imply that there is no need to invoke decoupling of the Rb-Sr and Sm-Nd systems in the continental crust.

Mcdermott, F.↗
NASA NTRS1988

U-Pb ages and Sr, Pb and Nd isotope data for gneisses near the Kolar Schist Belt: Evidence for the juxtaposition of discrete Archean terranes

Uranium-lead ages and Sr, Pb, and Nd isotopic data for gneisses near the Kolar Schist Belt and their interpretation as evidence for the juxtaposition of discrete Archean terranes were presented. The granodioritic Kambha gneiss east of the schist belt has a zircon age of 2532 + or - 3 Ma and mantle-like initial Sr, Pb, and Nd isotopic ratios. Therefore these gneisses are thought to represent new crust added to the craton in the latest Archean. By contrast, more mafic Dod gneisses and leucocratic Dosa gneisses west of the schist belt (2632 + or - 7 and 2610 + or - 10 Ma) show evidence for contamination of their magmatic precursors (LREE-enriched mantle-derived for the Dod gneisses) by older (greater than 3.2 Ga) continental crust. Fragments of this older crust may be present as granitic and tonalitic inclusions in the 2.6-Ga gneisses and in shear zones. The antiquity of these fragments is supported by their Nd, Sr, and Pb isotopic compositions and by 2.8 to greater than 3.2 Ga zircon cores.

Krogstad, E. J.↗
NASA NTRS1988

Early Precambrian crustal evolution in Eastern India: The ages of the Singhbhum granite and included remnants of older gneiss

Geochronology of samples from the Indian Shield was discussed. New Sm-Nd data was given for the Singhbhum granite, which give model ages (T sub DM of 3.36 to 3.40 Ga, essentially equivalent to ages of included gneissic remnants of the older metamorphic group (OMG) (T sub DM = 3.35 to 3.41 Ga). Lead-lead and Rb-Sr ages of the granite and OMG range between 3.28 to 3.38 Ga. These results are considerably younger than the 3775 + or - 89 Ma Sm-Nd isochron of Basu et al., which Taylor and colleagues interpret as an artifact caused by regressing two suites of unrelated rock samples.

Moorbath, Stephen↗