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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Analysis of plastic deformation in silicon web crystals

Numerical calculation of 111-plane 110-line slip activity in silicon web crystals generated by thermal stresses is in good agreement with etch pit patterns and X-ray topographic data. The data suggest that stress redistribution effects are small and that a model, similar to that proposed by Penning (1958) and Jordan (1981) but modified to account for dislocation annihilation and egress, can be used to describe plastic flow effects during silicon web growth.

Spitznagel, J. A.↗
DOE OSTI2021

Disconnection-Mediated Transition in Segregation Structures at Twin Boundaries

Twin boundaries play an important role in the thermodynamics, stability, and mechanical properties of nanocrystalline metals. Understanding their structure and chemistry at the atomic scale is key to guide strategies for fabricating nanocrystalline materials with improved properties. In this work, we report an unusual segregation phenomenon at gold-doped platinum twin boundaries, which is arbitrated by the presence of disconnections, a type of interfacial line defect. By using atomistic simulations, we show that disconnections containing a stacking fault can induce an unexpected transition in the interfacial-segregation structure at the atomic scale, from a bilayer, alternating-segregation structure to a trilayer, segregation-only structure. This behavior is found for faulted disconnections of varying step heights and dislocation characters. Supported by a structural analysis and the classical Langmuir–McLean segregation model, we reveal that this phenomenon is driven by a structurally induced drop of the local pressure across the faulted disconnection accompanied by an increase in the segregation volume.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Possible role of grain-boundary and dislocation structure for the magnetic-flux trapping behavior of niobium: A first-principles study

In this work, first-principles methods were used to understand magnetic flux trapping at vacancies, dislocations, and grain boundaries in high-purity superconducting niobium. Full-potential linear augmented plane-wave methods were applied in progressively greater complexity, starting at simple vacancies and extending to screw dislocations and tilt grain boundaries to analyze the effects of magnetic field on the superconducting state surrounding these defects. Density-functional theory calculations identified changes in electronic structure at the dislocation core and different types of symmetric tilt grain boundaries relative to bulk niobium. Electron redistribution enhanced nonparamagnetic effects and thus perturb superconductivity, resulting in local conditions suitable for premature flux penetration and subsequently flux pinning. Since the coherence length of superconducting niobium at 0 K is significantly larger than the lattice parameter, the effects of line and planar defects in niobium are predicted to be stronger for defect clusters than single defects in isolation, which is consistent with recent experimental observations. Controlling accumulation or depletion of charge at the defects, e.g., by segregation of an impurity atom, can mitigate these tendencies thus increasing the quality of superconducting niobium.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1992

Mechanism of slip and twinning

The objectives are to: (1) demonstrate the mechanisms of deformation in body centered cubic (BCC), face centered cubic (FCC), and hexagonal close-packed (HCP)-structure metals and alloys and in some ceramics as well; (2) examine the deformed microstructures (slip lines and twin boundaries) in different grains of metallic and ceramic specimens; and (3) study visually the deformed macrostructure (slip and twin bands) of metals and alloys. Some of the topics covered include: deformation behavior of materials, mechanisms of plastic deformation, slip bands, twin bands, ductile failure, intergranular fracture, shear failure, slip planes, crystal deformation, and dislocations in ceramics.

Rastani, Mansur↗
NASA NTRS1988

Low-temperature photoluminescence studies of chemical-vapor-deposition-grown 3C-SiC on Si

Low-temperature photoluminescence studies of 26 cubic SiC films, ranging in thickness from 600 A to 25 microns, grown by CVD on (100)Si are presented. It is suggested that the G band near 1.90-1.92 eV and its phonon side bands G1 and G2 are related to dislocations and extended defects. Formulas for the band-gap shift due to an axial stress have been obtained and applied to the CVD 3C-SiC/Si system. The results indicate that a 1-3-micron transition layer greatly reduces the interface misfit strain, and that biaxial stress in the SiC/Si system depresses the intensity of the no-phonon line.

Choyke, W. J.↗
DOE OSTI2018

Microstructure and Mechanical Characterization of Friction-Stir-Welded Dual-Phase Brass

Friction stir welding (FSW) is an ideal process to join brass to avoid the evaporation of zinc. In the present investigation, 6-mm-thick dual-phase brass plates were joined efficiently using FSW at various tool rotational speeds. The microstructures were studied using optical microscopy, electron backscattered diffraction and transmission electron microscopy. The optical micrographs revealed the evolution of various zones across the joint line. The microstructure of the heat-affected zone was similar to that of base metal. The weld zone exhibited finer grains due to dynamic recrystallization. The recrystallization was inhomogeneous and the inhomogeneity reduced with increased tool rotational speed. The dual phase was preserved in the weld zone due to the retention of zinc. The severe plastic deformation created a lot of dislocations in the weld zone. The weld zone was strengthened after welding. The role of tool rotational speed on the joint strength is further reported.

36 MATERIALS SCIENCE↗
DOE OSTI2012

High-energy diffraction microscopy at the advanced photon source

The status of the High Energy Diffraction Microscopy (HEDM) program at the 1-ID beam line of the Advanced Photon Source is reported. HEDM applies high energy synchrotron radiation for the grain and sub-grain scale structural and mechanical characterization of polycrystalline bulk materials in situ during thermomechanical loading. Case studies demonstrate the mapping of grain boundary topology, the evaluation of stress tensors of individual grains during tensile deformation and comparison to a finite element modeling simulation, and the characterization of evolving dislocation structure. Complementary information is obtained by post mortem electron microscopy on the same sample volume previously investigated by HEDM.

43 PARTICLE ACCELERATORS↗
NASA NTRS2012

Simplex GPS and InSAR Inversion Software

Changes in the shape of the Earth's surface can be routinely measured with precisions better than centimeters. Processes below the surface often drive these changes and as a result, investigators require models with inversion methods to characterize the sources. Simplex inverts any combination of GPS (global positioning system), UAVSAR (uninhabited aerial vehicle synthetic aperture radar), and InSAR (interferometric synthetic aperture radar) data simultaneously for elastic response from fault and fluid motions. It can be used to solve for multiple faults and parameters, all of which can be specified or allowed to vary. The software can be used to study long-term tectonic motions and the faults responsible for those motions, or can be used to invert for co-seismic slip from earthquakes. Solutions involving estimation of fault motion and changes in fluid reservoirs such as magma or water are possible. Any arbitrary number of faults or parameters can be considered. Simplex specifically solves for any of location, geometry, fault slip, and expansion/contraction of a single or multiple faults. It inverts GPS and InSAR data for elastic dislocations in a half-space. Slip parameters include strike slip, dip slip, and tensile dislocations. It includes a map interface for both setting up the models and viewing the results. Results, including faults, and observed, computed, and residual displacements, are output in text format, a map interface, and can be exported to KML. The software interfaces with the QuakeTables database allowing a user to select existing fault parameters or data. Simplex can be accessed through the QuakeSim portal graphical user interface or run from a UNIX command line.

Donnellan, Andrea↗
DOE OSTI2016

Reduced dislocation density in Ga x In 1–x P compositionally graded buffer layers through engineered glide plane switch

In this work we develop control over dislocation glide dynamics in Ga x In 1-x P compositionally graded buffer layers (CGBs) through control of CuPt ordering on the group-III sublattice. The ordered structure is metastable in the bulk, so any glissile dislocation that disrupts the ordered pattern will release stored energy, and experience an increased glide force. Here we show how this connection between atomic ordering and dislocation glide force can be exploited to control the threading dislocation density (TDD) in Ga x In 1-x P CGBs. When ordered Ga x In 1-x P is graded from the GaAs lattice constant to InP, the order parameter ..eta.. decreases as x decreases, and dislocation glide switches from one set of glide planes to the other. This glide plane switch (GPS) is accompanied by the nucleation of dislocations on the new glide plane, which typically leads to increased TDD. We develop control of the GPS position within a Ga x In 1-x P CGB through manipulation of deposition temperature, surfactant concentration, and strain-grading rate. We demonstrate a two-stage Ga x In 1-x P CGB from GaAs to InP with sufficiently low TDD for high performance devices, such as the 4-junction inverted metamorphic multi-junction solar cell, achieved through careful control the GPS position. Here, experimental results are analyzed within the context of a model that considers the force balance on dislocations on the two competing glide planes as a function of the degree of ordering.

14 SOLAR ENERGY↗
DOE OSTI2024

Strength-ductility synergy through microstructural and compositional heterogeneity in directed energy deposition additive manufacturing of face-centered cubic materials

Directed energy deposition (DED) is an additive manufacturing (AM) process based on welding technology and offers the advantages of large build volume, high deposition rate, and ability to fabricate multi-material parts. Epitaxial continuous columnar grain growth is a characteristic microstructural feature of DED processed alloys. In this study, a bamboo-like microstructure (periodic alternation of equiaxed and columnar structure) was produced by adopting an intermittent deposition strategy in 316L stainless steel and Inconel 625. The formation of a bamboo-like alternating microstructure was confirmed through electron backscattered diffraction (EBSD) analysis. Hardness mapping showed that the columnar to equiaxed transition (CET) occurred at the region right below the fusion line. A finite element (FE) model was used to investigate the relationship between the temperature gradient (G) and the solidification rate (R). The FE model showed a low G/R ratio at the region right below the interface promoting the CET. The grain size and material-dependent deformation behaviors are analyzed using digital image correlation (DIC). The lower deformation on the fine-grain regions observed in DIC analysis is attributed to a higher strain hardening rate, which is confirmed through dislocation density analysis on a tensile-interrupted specimen. The periodically alternating grain size coupled with the microstructural changes caused by intermittent deposition strategy result in a better strength-ductility synergy in both single-material and bimetallic specimens.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Acoustic Emission Responses of Three Typical Metals During Plastic and Creep Deformations

In this paper, the acoustic emission (AE) responses of three typical engineering metals (namely, Q235 carbon steel, H62 brass and 304 stainless steel) during plastic and high-temperature creep deformations were experimentally investigated. To gain insight into the AE response mechanisms, the micro scale mechanical behaviors of these metals were studied with a micro-tensile tester with observation by scanning electron microscopy (SEM). The following observations were found: (1) although the intensities and activities of the AE signals greatly differed under the same configurations, the AE peak values appeared at the transition from elasticity to plasticity for all three metals; (2) compared to the AE signal intensity during plastic deformation, the signal intensity during high-temperature creep was much weaker; (3) slip lines appeared within the crystal grains at the stress level corresponding to the peak AE signal intensity, but the densities of the slip lines and their crossover were not proportional to the AE signals of the metals. From these findings, the following conclusions were drawn about the application of AE: (1) AE is more scientific method to determine the yielding point of a metal without plastic flow than the nominal yield stress; (2) AE can be used to determine the deformation mechanism at high temperature, particularly, to distinguish creep from plastic deformation; (3) the AE response is the result of a sudden energy release by dislocation motion; however, the AE signal intensity is not necessarily proportional to the dislocation activity.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Characterization of Radiation Induced Defects Across Scales

The Whole Powder Pattern Modelling (WPPM) approach of diffraction line profile analysis (LPA) was applied for the first time on PuO 2 in order to understand the evolution of the microstructural properties as a function of process conditions. Crystallite size distributions and defect concentrations were determined by WPPM on three different PuO 2 samples - including one with a bimodal distribution and compared to the result of more common LPA analyses used in PuO 2 literature studies (e.g. Scherrer equation, double Voigt method). The conclusion was that a lognormal distribution of spherical crystallites with dislocations most closely represent the microstructure of PuO 2 produced by heating Pu 2 (C 2 O 4 ) 3 (H 2 O) 6 •3H 2 O between 650°C and 850°C. The volume-weighted mean column length (Lvol) parameter obtained from the double Voigt method for the monomodal samples were the same as the Lvol obtained from the WPPM within uncertainty. The two LPA methods did not agree on the Lvol parameters of the bimodal distribution sample with only the WPPM getting values that were consistent with the individual components. The WPPM can potentially provide more insight into future studies of the influences on the microstructure properties of PuO 2 .

36 MATERIALS SCIENCE↗
DOE OSTI2020

Lateral Heterostructures of Multilayer GeS and SnS van der Waals Crystals

Engineered heterostructures derive distinct properties from materials integration and interface formation. Two-dimensional crystals have been combined to form vertical stacks and lateral heterostuctures with covalent line interfaces. While thicker vertical stacks have been realized, lateral heterostructures from multilayer van der Waals crystals, which could bring the benefits of high-quality interfaces to bulk-like layered materials, have remained much less explored. In this work, we demonstrate the integration of anisotropic layered Sn and Ge monosulfides into complex heterostructures with seamless lateral interfaces and tunable vertical design using a two-step growth process. The anisotropic lattice mismatch at the lateral interfaces between GeS and SnS is relaxed via dislocations and interfacial alloying. Nanoscale optoelectronic measurements by cathodoluminescence spectroscopy show the characteristic light emission of joined high-quality van der Waals crystals. Spectroscopy across the lateral interface indicates valley-selective luminescence in the bulk SnS component that arises due to anisotropic electron transfer across the interface. The results demonstrate the ability to realize high-quality lateral heterostructures of multilayer van der Waals crystals for diverse applications, e.g., in optoelectronics or valleytronics.

36 MATERIALS SCIENCE↗
NASA NTRS1991

1000 to 1200 K time-dependent compressive deformation of single-crystalline and polycrystalline B2 Ni-40Al

The 1000-K and 1200-K time-dependent deformation of 100-line-oriented and non-100-line-oriented single crystals of Ni-40Al (made by a modified Bridgman technique) was examined over a large range of strain rates (from 0.1 to 10 to the -7th per sec). The results were compared with those for polycrystalline Ni-40Al made by hot pressing XD synthesized powder. The results from measurements of slow-plastic-strain-rate properties of the two materials show that single crystals offer no strength advantage over polycrystalline material. Both forms were found to deform via a dislocation climb mechanism.

Whittenberger, J. D.↗
NASA NTRS1978

Structure development in silicon sheet by shaped crystallization

Models are presented for the development of a parallel twinned structure of the 110 plane type and the 112 line type in silicon ribbons. The models are believed to be mutually compatible and operable. The first model relates the requirements for super-cooling during crystallization. The existence of reentrant angles associated with the twin structure is proposed to provide a rough interface to reduce super-cooling. The spacing of the twins is proposed to be limited by the geometrical relationship between the thermal gradient in the liquid and the dimensions of the twinned crystallization front. The second model relates the thermal stress configuration to detail dislocation reactions which would be expected to develop twins. While a specific dislocation mechanism cannot yet be defined, a number of alternatives are presented. All of these various dislocation mechanisms would result in the observed crystalline configuration and the choice among them is not critical.

Leipold, M. H.↗
DOE OSTI2015

Quantitative study of particle size distribution in an in-situ grown Al–TiB{sub 2} composite by synchrotron X-ray diffraction and electron microscopy

Synchrotron X-ray diffraction and transmission electron microscopy (TEM) were applied to quantitatively characterize the average particle size and size distribution of free-standing TiB{sub 2} particles and TiB{sub 2} particles in an in-situ grown Al–TiB{sub 2} composite. The detailed evaluations were carried out by X-ray line profile analysis using the restricted moment method and multiple whole profile fitting procedure (MWP). Both numerical methods indicate that the formed TiB{sub 2} particles are well crystallized and free of crystal defects. The average particle size determined from different Bragg reflections by the restricted moment method ranges between 25 and 55 nm, where the smallest particle size is determined using the 110 reflection suggesting the highest lateral-growth velocity of (110) facets. The MWP method has shown that the in-situ grown TiB{sub 2} particles have a very low dislocation density (~ 10{sup 11} m{sup −} {sup 2}) and their size distribution can be described by a log-normal distribution. Good agreement was found between the results obtained from the restricted moment and MWP methods, which was further confirmed by TEM. - Highlights: • Accurate quantitative characterization of in-situ grown T{sub i}B{sub 2} particles has been achieved. • Particle size anisotropy was revealed indicating 110 facets being largest during T{sub i}B{sub 2} growth. • A wide size distribution was observed for T{sub i}B{sub 2} particles with a dominant size smaller than 100 nm.

36 MATERIALS SCIENCE↗
NASA NTRS1990

Crystal-melt interface shape of Czochralski-grown large diameter germanium crystals

Crystal-melt interface shapes of 100 to 200 mm diameter 111-line Ge grown by the Czochralski technique have been examined using the method of fast withdrawal from the melt. Initially, the interface shape is convex, then transforms gradually into a sigmoidal shape, becomes nearly planar at about one third of the final crystal length, and finally assumes a concave profile with progressively increasing curvature. The nearly planar interface has a double-facet structure, with an annular facet at the edge of the crystal in addition to the central (111) facet. Formation of the annular facet is accompanied by a giant oscillation of the pull rate when the maximum average pull rate is exceeded. Such oscillation is detrimental to crystal quality, since it introduces a region of high dislocation density. An average pull rate maximum of 2 cm/h has been found to allow for a smooth growth of 200 mm diameter crystals. The origin of the pull rate perturbation is discussed in terms of an instantaneous change in the equilibrium shape of the meniscus.

Roth, M.↗
DOE OSTI2012

Growth and characterizations of semipolar (1122) InN

We report on metal-organic vapor phase epitaxial growth of (1122) InN on (1122) GaN templates on m-plane (1010) sapphire substrates. The in-plane relationship of the (1122) InN samples is [1123]{sub InN} Double-Vertical-Line Double-Vertical-Line [0001]{sub sapphire} and [1100]{sub InN} Double-Vertical-Line Double-Vertical-Line [1210]{sub sapphire}, replicating the in-plane relationship of the (1122) GaN templates. The surface of the (1122) InN samples and the (1122) GaN templates shows an undulation along [1100]{sub InN,GaN}, which is attributed to anisotropic diffusion of indium/gallium atoms on the (1122) surfaces. The growth rate of the (1122) InN layers was 3-4 times lower compared to c-plane (0001) InN. High resolution transmission electron microscopy showed a relaxed interface between the (1122) InN layers and the (1122) GaN templates, consistent with x-ray diffraction results. Basal plane stacking faults were found in the (1122) GaN templates but they were terminated at the InN/(1122) GaN interface due to the presence of misfit dislocations along the entire InN/GaN interface. The misfit dislocations were contributed to the fully relaxation and the tilts of the (1122) InN layers. X-ray photoelectron spectroscopy was used to determine the polarity of the grown (1122) InN sample, indicating an In-polar (1122) InN. The valence band maximum was determined to be at (1.7 {+-} 0.1) eV for the (1122) InN sample, comparable to In-polar c-plane InN.

36 MATERIALS SCIENCE↗