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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
NASA NTRS1999

Hydrazine Detection with a Tunable Diode Laser Spectrometer

Several instruments have been developed to measure low concentrations of hydrazine but none completely meet the sensitivity requirements while satisfying additional criteria such as quick response, stable calibration, interference free operation, online operation, reasonable cost, etc. A brief review is presented of the current technology including the electrochemical cell, the ion mobility spectrometer, the mass spectrometer, and the gas chromatograph. A review of the advantages and disadvantages of these instruments are presented here. The review also includes commercially unavailable technology such as the electronic nose and the Tunable Diode Laser (TDL) IR Spectrometer. It was found that the TDL could meet the majority of these criteria including fast response, minimum maintenance, portability, and reasonable cost. An experiment was conducted to demonstrate the feasibility of such a system using an existing (non-portable) instrument. A lead-salt tunable diode laser, cooled to 85 degrees Kelvin was used to record direct absorption and second-derivative spectra of Hydrazine at several pressures to study the sensitivity to low levels of Hydrazine. Spectra of NH3 and CO2 were used for wavelength identification of the scanned region. With a pathlength of 80 m, detection sensitivities of about 1 ppb were achieved for hydrazine in dry nitrogen at a cell pressure of 100 mbar. For spectroscopic detection of Hydrazine, spectral regions including strong Ammonia or Carbon Dioxide lines must be avoided. Strong Hydrazine absorption features were identified at 940/cm showing minimal contribution from Ammonia interferences as suitable candidates for Hydrazine gas detection. For the studies reported here, the particular laser diode could only cover the narrow regions near 962/cm and 965/cm where strong Ammonia interferences were expected. However, the high resolution (0.001/cm) of the TDL spectrometer allowed individual lines of Hydrazine to be identified away from interferences from either Ammonia or Carbon Dioxide, especially at lower pressures. A Hydrazine line was identified at 961.75/cm which was free from Ammonia absorption and would be suitable to monitor hydrazine levels. This paper also shows data on the degradation of the detectivity of Hydrazine with increasing pressure. Several design options for a portable unit are presented, including designs with near IR and Quantum Cascade laser components which do not require liquid nitrogen cooling.

Houseman, John↗
NASA NTRS1999

Diode Laser Measurements of Concentration and Temperature in Microgravity Combustion

Diode laser absorption spectroscopy provides a direct method of determinating species concentration and local gas temperature in combustion flames. Under microgravity conditions, diode lasers are particularly suitable, given their compact size, low mass and low power requirements. The development of diode laser-based sensors for gas detection in microgravity is presented, detailing measurements of molecular oxygen. Current progress of this work and future application possibilities for these methods on the International Space Station are discussed.

Silver, Joel A.↗
NASA NTRS2001

Controlling Fringe Sensitivity of Electro-Optic Holography Systems Using Laser Diode Current Modulation

Electro-Optic Holography (EOH) is a non-intrusive, laser-based, displacement measurement technique capable of static and dynamic displacement measurements. EOH is an optical interference technique in which fringe patterns that represent displacement contour maps are generated. At excessively large displacements the fringe density may be so great that individual fringes are not resolvable using typical EOH techniques. This thesis focuses on the development and implementation of a method for controlling the sensitivity of the EOH system. This method is known as Frequency Translated Electro-Optic Holography (FTEOH). It was determined that by modulating the current source of the laser diode at integer multiples of the object vibration, the fringe pattern is governed by higher order Bessel function of the first kind and the number of fringes that represent a given displacement can be controlled. The reduction of fringes is theoretically unlimited but physically limited by the frequency bandwidth of the signal generator, providing modulation to the laser diode. Although this research technique has been verified theoretically and experimentally in this thesis, due to the current laser diode capabilities it is a tedious and time consuming process to acquire data using the FTEOH technique.

Bybee, Shannon J.↗
NASA NTRS2001

Quantitative Detection of Combustion Species using Ultra-Violet Diode Lasers

Southwest Sciences is developing a new microgravity combustion diagnostic based on UV diode lasers. The instrument will allow absolute concentration measurements of combustion species on a variety of microgravity combustion platforms including the Space Station. Our approach uses newly available room temperature UV diode lasers, thereby keeping the instrument compact, rugged and energy efficient. The feasibility of the technique was demonstrated by measurement of CH radicals in laboratory flames. Further progress in fabrication technology of UV diode lasers at shorter wavelengths and higher power will result in detection of transient species in the deeper UV. High sensitivity detection of combustion radicals is provided with wavelength modulation absorption spectroscopy.

Pilgrim, J. S.↗
NASA NTRS2000

946 nm Diode Pumped Laser Produces 100mJ

An innovative approach to obtaining high energy at 946 nm has yielded 101 mJ of laser energy with an optical-to-optical slope efficiency of 24.5%. A single gain module resonator was evaluated, yielding a maximum output energy of 50 mJ. In order to obtain higher energy a second gain module was incorporated into the resonator. This innovative approach produced un-surprised output energy of 101 mJ. This is of utmost importance since it demonstrates that the laser output energy scales directly with the number of gain modules. Therefore, higher energies can be realized by simply increasing the number of gain modules within the laser oscillator. The laser resonator incorporates two gain modules into a folded "M-shaped" resonator, allowing a quadruple pass gain within each rod. Each of these modules consists of a diode (stack of 30 microlensed 100 Watt diode array bars, each with its own fiber lens) end-pumping a Nd:YAG laser rod. The diode output is collected by a lens duct, which focuses the energy into a 2 mm diameter flat to flat octagonal pump area of the laser crystal. Special coatings have been developed to mitigate energy storage problems, including parasitic lasing and amplified spontaneous emission (ASE), and encourage the resonator to operate at the lower gain transition at 946 nm.

Axenson, Theresa J.↗
NASA NTRS2003

Silicon Carbide Diodes Performance Characterization and Comparison With Silicon Devices

Commercially available silicon carbide (SiC) Schottky diodes from different manufacturers were electrically tested and characterized at room temperature. Performed electrical tests include steady state forward and reverse I-V curves, as well as switching transient tests performed with the diodes operating in a hard switch dc-to-dc buck converter. The same tests were performed in current state of the art silicon (Si) and gallium arsenide (GaAs) Schottky and pn junction devices for evaluation and comparison purposes. The SiC devices tested have a voltage rating of 200, 300, and 600 V. The comparison parameters are forward voltage drop at rated current, reverse current at rated voltage and peak reverse recovery currents in the dc to dc converter. Test results show that steady state characteristics of the tested SiC devices are not superior to the best available Si Schottky and ultra fast pn junction devices. Transient tests reveal that the tested SiC Schottky devices exhibit superior transient behavior. This is more evident at the 300 and 600 V rating where SiC Schottky devices showed drastically lower reverse recovery currents than Si ultra fast pn diodes of similar rating.

Lebron-Velilla, Ramon C.↗
NASA NTRS2004

Qualification of Laser Diode Arrays for Mercury Laser Altimeter Mission

NASA's requirements for high reliability, high performance satellite laser instruments have driven the investigation of many critical components; specifically, 808 nm laser diode array (LDA) pump devices. The MESSENGER mission is flying the Mercury Laser Altimeter (MLA) which is a diode-pumped Nd:YAG laser instrument designed to map the topography of Mercury. The environment imposed on the instrument by the orbital dynamics places special requirements on the laser diode arrays. In order to limit the radiative heating of the satellite from the surface of Mercury, the satellite is designed to have a highly elliptical orbit. The satellite will heat near perigee and cool near apogee. The laser power is cycled during these orbits so that the laser is on for only 30 minutes (perigee) in a 12 hour orbit. The laser heats 10 C while powered up and cools while powered down. In order to simulate these operational conditions, we designed a test to measure the LDA performance while being temperature and power cycled. Though the mission requirements are specific to NASA and performance requirements are derived from unique operating conditions, the results are general and widely applicable. We present results on the performance of twelve LDAs operating for several hundred million pulses. The arrays are 100 watt, quasi-CW, conductively-cooled, 808 nm devices. Prior to testing, we fully characterize each device to establish a baseline for individual array performance and status. Details of this characterization can be found in reference. Arrays are divided into four groups and subjected to the temperature and power cycling matrix are shown.

Stephen, Mark↗
NASA NTRS2004

Silicon Carbide Diodes Performance Characterization at High Temperatures

NASA Glenn Research center's Electrical Systems Development branch is working to demonstrate and test the advantages of Silicon Carbide (SiC) devices in actual power electronics applications. The first step in this pursuit is to obtain commercially available SiC Schottky diodes and to individually test them under both static and dynamic conditions, and then compare them with current state of the art silicon Schottky and ultra fast p-n diodes of similar voltage and current ratings. This presentation covers the results of electrical tests performed at NASA Glenn. Steady state forward and reverse current-volt (I-V) curves were generated for each device to compare performance and to measure their forward voltage drop at rated current, as well as the reverse leakage current at rated voltage. In addition, the devices were individually connected as freewheeling diodes in a Buck (step down) DC to DC converter to test their reverse recovery characteristics and compare their transient performance in a typical converter application. Both static and transient characterization tests were performed at temperatures ranging from 25 C to 300 C, in order to test and demonstrate the advantages of SiC over Silicon at high temperatures.

Lebron-Velilla, Ramon C.↗
NASA NTRS2006

Degradation of the Adhesive Properties of MD-944 Diode Tape by Simulated Low Earth Orbit Environmental Factors

The International Space Station (ISS) solar arrays utilize MD-944 diode tape with silicone pressure-sensitive adhesive to protect the underlying diodes and also provide a high-emittance surface. On-orbit, the silicone adhesive will be exposed and ultimately convert to a glass-like silicate due to atomic oxygen (AO). The current operational plan is to retract ISS solar array P6 and leave it stored under load for a long duration (6 mo or more). The exposed silicone adhesive must not cause the solar array to stick to itself or cause the solar array to fail during redeployment. The Environmental Effects Branch at Marshall Space Flight Center, under direction from the ISS Program Office Environments Team, performed simulated space environment exposures with 5-eV AO, near ultraviolet radiation and ionizing radiation. The exposed diode tape samples were put under preload and then the resulting blocking force was measured using a tensile test machine. Test results indicate that high-energy AO, ultraviolet radiation, and electron ionizing radiation exposure all reduce the blocking force for a silicone-to-silicone bond. AO exposure produces the most significant reduction in blocking force

Albyn, K.↗
NASA NTRS2007

Qualification Testing of Laser Diode Pump Arrays for a Space-Based 2-micron Coherent Doppler Lidar

The 2-micron thulium and holmium-based lasers being considered as the transmitter source for space-based coherent Doppler lidar require high power laser diode pump arrays operating in a long pulse regime of about 1 msec. Operating laser diode arrays over such long pulses drastically impact their useful lifetime due to the excessive localized heating and substantial pulse-to-pulse thermal cycling of their active regions. This paper describes the long pulse performance of laser diode arrays and their critical thermal characteristics. A viable approach is then offered that allows for determining the optimum operational parameters leading to the maximum attainable lifetime.

Amzajerdian, Farzin↗
NASA NTRS2006

Characterization of 808-nm Quasi-CW Laser Diode Arrays

This viewgraph presentation reviews a study that aimed at a characterization of the Quasi-CW Laser Diode Arrays. NASA's requirements for high reliability, high performance satellite laser instruments have driven the investigation of many critical components; specifically, 808 nm laser diode array (LDA) pump devices. Performance and comprehensive characterization data of Quasi-CW, High-power, laser diode arrays is presented

Stephen, Mark↗
NASA NTRS2008

Thermal (Silicon Diode) Data Acquisition Systems

Marshall Space Flight Center s X-ray Cryogenic Facility (XRCF) has been performing cryogenic testing to 20 Kelvin since 1999. Two configurations for acquiring data from silicon diode temperature sensors have been implemented at the facility. The facility's environment is recorded via a data acquisition system capable of reading up to 60 silicon diodes. Test article temperature is recorded by a second data acquisition system capable of reading 150+ silicon diodes. The specifications and architecture of both systems will be presented.

Wright, Ernest↗
NASA NTRS2008

Thermal (Silicon Diode) Data Acquisition System

Marshall Space Flight Center's X-ray Calibration Facility (XRCF) has been performing cryogenic testing to 20 Kelvin since 1999. Two configurations for acquiring data from silicon diode temperature sensors have been implemented at the facility. The facility's environment is recorded via a data acquisition system capable of reading up to 60 silicon diodes. Test article temperature is recorded by a second data acquisition system capable of reading 150+ silicon diodes. The specifications and architecture of both systems will be presented.

Kegley, Jeffrey↗
NASA NTRS2010

Three-Dimensional Computed Tomography as a Method for Finding Die Attach Voids in Diodes

NASA analyzes electrical, electronic, and electromechanical (EEE) parts used in space vehicles to understand failure modes of these components. The diode is an EEE part critical to NASA missions that can fail due to excessive voiding in the die attach. Metallography, one established method for studying the die attach, is a time-intensive, destructive, and equivocal process whereby mechanical grinding of the diodes is performed to reveal voiding in the die attach. Problems such as die attach pull-out tend to complicate results and can lead to erroneous conclusions. The objective of this study is to determine if three-dimensional computed tomography (3DCT), a nondestructive technique, is a viable alternative to metallography for detecting die attach voiding. The die attach voiding in two- dimensional planes created from 3DCT scans was compared to several physical cross sections of the same diode to determine if the 3DCT scan accurately recreates die attach volumetric variability

Brahm, E. N.↗
NASA NTRS2010

Single Spatial-Mode Room-Temperature-Operated 3.0 to 3.4 micrometer Diode Lasers

Compact, highly efficient, 3.0 to 3.4 m light emitters are in demand for spectroscopic analysis and identification of chemical substances (including methane and formaldehyde), infrared countermeasures technologies, and development of advanced infrared scene projectors. The need for these light emitters can be currently addressed either by bulky solid-state light emitters with limited power conversion efficiency, or cooled Interband Cascade (IC) semiconductor lasers. Researchers here have developed a breakthrough approach to fabrication of diode mid-IR lasers that have several advantages over IC lasers used for the Mars 2009 mission. This breakthrough is due to a novel design utilizing the strain-engineered quantum-well (QW) active region and quinternary barriers, and due to optimization of device material composition and growth conditions (growth temperatures and rates). However, in their present form, these GaSb-based laser diodes cannot be directly used as a part of sensor systems. The device spectrum is too broad to perform spectroscopic analysis of gas species, and operating currents and voltages are too high. In the current work, the emitters were fabricated as narrow-ridge waveguide index-guided lasers rather than broad stripe-gain guided multimode Fabry-Perot (FP) lasers as was done previously. These narrow-ridge waveguide mid-IR lasers exhibit much lower power consumptions, and can operate in a single spatial mode that is necessary for demonstration of single-mode distributed feedback (DBF) devices for spectroscopic applications. These lasers will enable a new generation of compact, tunable diode laser spectrometers with lower power consumption, reduced complexity, and significantly reduced development costs. These lasers can be used for the detection of HCN, C2H2, methane, and ethane.

Frez, Clifford F.↗
NASA NTRS2012

670-GHz Schottky Diode-Based Subharmonic Mixer with CPW Circuits and 70-GHz IF

GaAs-based, sub-harmonically pumped Schottky diode mixers offer a number of advantages for array implementation in a heterodyne receiver system. Since the radio frequency (RF) and local oscillator (LO) signals are far apart, system design becomes much simpler. A proprietary planar GaAs Schottky diode process was developed that results in very low parasitic anodes that have cutoff frequencies in the tens of terahertz. This technology enables robust implementation of monolithic mixer and frequency multiplier circuits well into the terahertz frequency range. Using optical and e-beam lithography, and conventional epitaxial layer design with innovative usage of GaAs membranes and metal beam leads, high-performance terahertz circuits can be designed with high fidelity. All of these mixers use metal waveguide structures for housing. Metal machined structures for RF and LO coupling hamper these mixers to be integrated in multi-pixel heterodyne array receivers for spectroscopic and imaging applications. Moreover, the recent developments of terahertz transistors on InP substrate provide an opportunity, for the first time, to have integrated amplifiers followed by Schottky diode mixers in a heterodyne receiver at these frequencies. Since the amplifiers are developed on a planar architecture to facilitate multi-pixel array implementation, it is quite important to find alternative architecture to waveguide-based mixers.

Chattopadhyay, Goutam↗
NASA NTRS2013

On-Chip Power-Combining for High-Power Schottky Diode-Based Frequency Multipliers

A 1.6-THz power-combined Schottky frequency tripler was designed to handle approximately 30 mW input power. The design of Schottky-based triplers at this frequency range is mainly constrained by the shrinkage of the waveguide dimensions with frequency and the minimum diode mesa sizes, which limits the maximum number of diodes that can be placed on the chip to no more than two. Hence, multiple-chip power-combined schemes become necessary to increase the power-handling capabilities of high-frequency multipliers. The design presented here overcomes difficulties by performing the power-combining directly on-chip. Four E-probes are located at a single input waveguide in order to equally pump four multiplying structures (featuring two diodes each). The produced output power is then recombined at the output using the same concept.

Chattopadhyay, Goutam↗