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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Thermal Performance of Neutron Sensor Qualification Device

The neutron sensor qualification device was developed to provide a temperature-controlled environment for neutron sensors and dosimetry, enabling irradiation in a neutron field at the Armed Forces Radiobiology Research Institute (AFRRI) TRIGA reactor facility. The device, constructed from low-activation and low neutron cross-section materials, features a modular tube furnace design with three independently controlled heating zones for controlling axial temperature distribution. Laboratory testing validated the device's thermal performance, including uniform temperature distribution with less than 6°C variation across the central region, a steady-state operational temperature of 350°C achieved in approximately 3 hours, and a cooling time constant of 3.5 hours. External surface temperatures remained safe for handling, with the surrounding aluminum structure remaining at ambient conditions. The results confirm the device’s suitability for neutron sensor qualification experiments, with potential for future operation at higher temperatures and further optimization of performance.

46 - INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AN↗
DOE OSTI2022

Transmission Electron Microscopy Study on the Effect of Thermal and Electrical Stimuli on Ge2Te3 Based Memristor Devices

Memristor devices fabricated using the chalcogenide Ge 2 Te 3 phase change thin films in a metal-insulator-metal structure are characterized using thermal and electrical stimuli in this study. Once the thermal and electrical stimuli are applied, cross-sectional transmission electron microscopy (TEM) and X-ray energy-dispersive spectroscopy (XEDS) analyses are performed to determine structural and compositional changes in the devices. Electrical measurements on these devices showed a need for increasing compliance current between cycles to initiate switching from low resistance state (LRS) to high resistance state (HRS). The measured resistance in HRS also exhibited a steady decrease with increase in the compliance current. High resolution TEM studies on devices in HRS showed the presence of residual crystalline phase at the top-electrode/dielectric interface, which may explain the observed dependence on compliance current. XEDS study revealed diffusion related processes at dielectric-electrode interface characterized, by the separation of Ge 2 Te 3 into Ge- and Te- enriched interfacial layers. This was also accompanied by spikes in O level at these regions. Furthermore, in-situ heating experiments on as-grown thin films revealed a deleterious effect of Ti adhesive layer, wherein the in-diffusion of Ti leads to further degradation of the dielectric layer. This experimental physics-based study shows that the large HRS/LRS ratio below the current compliance limit of 1 mA and the ability to control the HRS and LRS by varying the compliance current are attractive for memristor and neuromorphic computing applications.

Shallcross, Austin↗
DOE OSTI2022

Carbon Nanotube Devices for Quantum Technology

Carbon nanotubes, quintessentially one-dimensional quantum objects, possess a variety of electrical, optical, and mechanical properties that are suited for developing devices that operate on quantum mechanical principles. The states of one-dimensional electrons, excitons, and phonons in carbon nanotubes with exceptionally large quantization energies are promising for high-operating-temperature quantum devices. Here, we discuss recent progress in the development of carbon-nanotube-based devices for quantum technology, i.e., quantum mechanical strategies for revolutionizing computation, sensing, and communication. We cover fundamental properties of carbon nanotubes, their growth and purification methods, and methodologies for assembling them into architectures of ordered nanotubes that manifest macroscopic quantum properties. Most importantly, recent developments and proposals for quantum information processing devices based on individual and assembled nanotubes are reviewed.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Harnessing Quantum Capacitance in 2D Material/Molecular Layer Junctions for Novel Electronic Device Functionality

Two-dimensional (2D) materials promise advances in electronic devices beyond Moore’s scaling law through extended functionality, such as non-monotonic dependence of device parameters on input parameters. However, the robustness and performance of effects like negative differential resistance (NDR) and anti-ambipolar behavior have been limited in scale and robustness by relying on atomic defects and complex heterojunctions. In this paper, we introduce a novel device concept that utilizes the quantum capacitance of junctions between 2D materials and molecular layers. We realized a variable capacitance 2D molecular junction (vc2Dmj) diode through the scalable integration of graphene and single layers of stearic acid. The vc2Dmj exhibits NDR with a substantial peak-to-valley ratio even at room temperature and an active negative resistance region. The origin of this unique behavior was identified through thermoelectric measurements and ab initio calculations to be a hybridization effect between graphene and the molecular layer. The enhancement of device parameters through morphology optimization highlights the potential of our approach toward new functionalities that advance the landscape of future electronics.

2D materials↗
DOE OSTI2026

From IMT Device Measurements to Network-Level Consequences: When Learning Suppresses Beyond-LIF Neuron Dynamics

Emerging neuromorphic devices such as insulator--metal transition (IMT) devices exhibit complex temporal dynamics, including slow internal state memory, hysteresis, and burst-like firing, which are poorly captured by conventional leaky integrate-and-fire (LIF) neurons. However, it remains unclear when such dynamics influence learning and inference at the network level, particularly under commonly used unsupervised plasticity rules. We present a controlled, full-stack co-design study spanning experimental characterization of individual IMT devices, compact neuron model development, and large-scale spiking network simulations with identical architectures and learning rules. Rather than optimizing benchmark accuracy, our goal is to diagnose when neuron-level dynamics survive learning and competition, and when they are suppressed, to inform the co-design of devices, networks, and learning rules that can exploit beyond-LIF complexity.

42 ENGINEERING↗
DOE OSTI2020

Electronic colloidal nanocrystal devices

Colloidal nanocrystal electronic devices including multiple types of nanocrystal device elements including nanocrystal metallic electrodes, nanocrystal insulators, and nanocrystal insulators. Colloidal nanocrystal electronic devices may be produced by forming multiple nanocrystal electronic device elements on a substrate.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Quantum coherent devices with reduced energy dissipation

The disclosed technology can be used to increase lifetimes of quantum coherent devices such as qubits including transmons and xmons and to reduce the losses in resonators. Energy stored in superconducting devices can be lost by emission of phonons that couple to the environment. Defects in one or more materials in the quantum coherent device can cause the coupling to phonons. Patterning one or more of the layers creates a phononic bandgap that reduces or eliminates the emission of the phonons to the environment. The energy then couples back to the quantum coherent device.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Arsenic Doping of Polycrystalline CdSeTe Devices for Microsecond Life-times with High Carrier Concentrations

We report seminal advances in fabrication and understanding of group V (As) doped thin-film polycrystalline CdTe-based solar cells. The devices are fabricated using a novel approach, by sublimating layers of CdSeTe and CdSeTe:As. This new method allowed us to achieve minority carrier lifetime of over 1 μs, carrier concentration of more than 5x1015 cc-1 and external radiative efficiency of over 2% in a device configuration. We find an increase in open-circuit voltage when comparing As-doped, Cu-doped and undoped devices. The choice of CdSeTe instead of a CdTe-only absorber has been explained using first-principle density functional theory model. A SCAPS device model is used to analyze the potential causes for lower open-circuit voltage.

14 SOLAR ENERGY↗
DOE OSTI2020

Systems and methods for shock-resistant memory devices

A shock-resistant memory device comprises a housing and a memory module. The memory module is disposed within the housing and surrounded by potting material to protect the memory module from damage during a shock event. The housing can include a port that accommodates a data connection between the memory module and a sensor from which data is desirably received by the memory module. During a shock event the connection between the memory module and the sensor may be severed, but data stored in the memory module can be retained in the memory module which is protected by the housing. To facilitate retrieval of the memory device subsequent to a shock event, a balloon can be affixed to the housing. The balloon can be configured to inflate subsequent to the shock event so that the shock-resistant memory device does not sink in water and to make the memory device more visible for recovery.

42 ENGINEERING↗
DOE OSTI2020

STRUCTURAL STABILITY OF MAGNETIC TUNNEL JUNCTION BASED MOLECULAR SPINTRONICS DEVICES (MTJMSD)

Harnessing the exotic properties of molecular level nanostructures to produce novel sensors, metamaterials, and futuristic computer devices can be technologically transformative. In addition, connecting the molecular nanostructures to ferromagnetic electrodes bring the unprecedented opportunity of making spin property based molecular devices. We have demonstrated that magnetic tunnel junction based molecular spintronics device (MTJMSD) approach to address numerous technological hurdles that have been inhibiting this field for decades. MTJMSD approach is based on producing a capacitor like a testbed where two metal electrodes are separated by an ultrathin insulator and subsequently bridging the molecule nanostructure across the insulator to transform a capacitor into a molecular device. Our prior work showed that MTJMSDs produced extremely intriguing phenomenon such as room temperature current suppression by six orders, spin photovoltaic effect, and evolution of new forms of magnetic metamaterials arising due to the interaction of the magnetic a molecule with two ferromagnetic thin films. However, making robust and reproducible electrical connections with exotic molecules with ferromagnetic electrodes is full of challenges and requires attention to MTJMSD structural stability. This paper focuses on MTJMSD stability by describing the overall fabrication protocol and the associated potential threat to reliability. MTJMSD is based on microfabrication methods such as (a) photolithography for patterning the ferromagnetic electrodes, (b) sputtering of metallic thin films and insulator, and (c) at the end electrochemical process for bridging the molecules between two ferromagnetic films separated by ~ 2nm insulating gap.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Optoelectronic device with a support member

Optoelectronic devices with a support member and methods of manufacturing or assembling the same are provided. An example of an optoelectronic device according to the present disclosure includes a substrate and an optical component and an electronic component disposed thereon or therein. The optoelectronic device further includes a ferrule coupled to the optical fiber and an optical socket receiving the ferrule therein. The optoelectronic device includes a support member disposed between the substrate and the optical socket such that the optical socket is spaced from the substrate by the support member.

42 ENGINEERING↗
DOE OSTI2020

Systems, devices, and methods for contact measurement and modulation of material properties

Materials and devices are provided for the sensing and manipulation of biomechanical and physiochemical properties of tissues or tissue surfaces. Examples of use include soft tissues such as skin or adipose tissues or more dense tissues such as muscle or heart or dense tissues such as bone. The materials and devices provide for in vivo measurements of biomechanical properties at the tissue surface, e.g. near surface regions of the epidermis or dermis or underlying structures. The devices can be non-invasive and/or non-destructive to the material and, especially for the biomaterials, can be biocompatible and/or biodegradable. The materials and devices can use ultrathin, stretchable networks of mechanical actuators and sensors constructed with nanoribbons of piezoelectric materials.

Dagdeviren, Canan↗
DOE OSTI2021

Emitter Reconstruction for Cleaved CdSexTe1-x Devices with Cu vs. As Doping

CdTe absorbers have had historically low carrier densities of ~10^14 cm-3 due to the self-compensating nature of copper dopants. Recent advances in group-V (e.g., arsenic) doping have increased this to 10^16-10^17 cm-3, but modeling suggests that the front interface and emitter properties become limiting in this case. By cleaving arsenic- and copper-doped CdTe device stacks at the emitter/absorber interface, we gain the ability to reconstruct emitters with known properties, which will not change during subsequent device processing, and directly test the modeling. By doing so, we find a much larger performance drop in arsenic devices; this is attributed to insufficient electron density in the emitter and increased sensitivity to interface changes due to collapsed depletion width. This work can help guide emitter engineering for highly-doped CdTe devices in both the as-grown-superstrate- and cleaved-substrate configurations.

As-doped↗
DOE OSTI2021

Smart Semi-Supervised Accumulation of Large Repositories for Industrial Control Systems Device Information

Industrial Control Systems device manufacturers frequently add new features to improve their product performance. Oftentimes, these changes are mainly vendor-driven initiatives, and customers may not be aware of the full impact of these new capabilities on their cybersecurity posture. In the energy sector, this can lead to considerable dissonance between vendor-provided cybersecurity claims and a customer’s responsibility for Operation Technology cybersecurity compliance. Thus, the resulting dynamic verification burden is shifted towards the customer and may pose a significant cybersecurity risk to the energy sector landscape. We found that there is very limited research into cybersecurity auditing for Operational Technology. However, a solution is needed for vetting the vendor-supplied feature claims and their adherence to cybersecurity requirements and standards. We are presently engaged in an effort to develop such a system. This paper demonstrates one vital aspect of this effort in proposing an end-to-end framework to accumulate a large repository of ICS device information for this vetting system, curate the dataset, and conduct extensive processing. This framework is designed to use web scraping, data analytics and Natural Language Processing (NLP) techniques to identify vendor websites, automate the collection of website-accessible documents and automatically derive metadata from them for identification of product documents relevant to the repository. We have found that this automated approach to vendor identification, document extraction into a product repository, and NLP pre-processing is unique and has not been previously presented in the literature. The preliminary work shows that this is feasible and can produce reliable results with minimum supervision. Future work will be built upon this foundation in order to achieve semi-supervised vetting of device technical information – a vital capability for ensuring that vendor-claimed device cybersecurity capabilities match industry requirements.

Ameri, Kimia↗
DOE OSTI2021

Lifting and removal device for additive manufacturing system

An attachment device for lifting and removing build plates and additive manufactured parts built on the build plates from an additive manufacturing machine. The attachment device may fit onto a lift trolley to cooperatively engage with and lift the build plate upward off of a surface of the additive manufacturing machine. The attachment device may include a support bar, two lifting arms, and a mounting bracket. The support bar may have a slider track formed therethrough, so that the lifting arms can be adjusted to correspond with a width of the build plate. The lifting arms may each having a channel formed along a length thereof and an interfacing portion slidably located within the slider track. The channels may be sized and shaped to engage with a bottom surface and/or opposing edges of the build plates. The mounting bracket may attach to a lifting device of the lift trolley.

Barr, Cary B.↗
DOE OSTI2021

Multi-sensor agent devices

Apparatus, methods, and systems implementing multi-sensor agent devices are described herein. The agent devices can each include a plurality of sensors for measuring parameters of interest to an entity such as an electric power utility. The sensors can be organized in individually-IP-addressable sensor clusters, with each sensor cluster including an associated microcontroller. The agent devices can be controlled by a control center of the entity to operate in a coordinated manner, such as to gather and transmit data regarding parameters of interest. The agent devices can be transported to desired areas for data collection by unmanned aerial systems such as drones, and the collected data can be stored in a distributed blockchain ledger.

Fuhr, Peter L.↗
DOE OSTI2022

Handheld multi-sensor biometric imaging device and processing pipeline

A handheld biometric imaging device having an array of cameras configured to simultaneously capture face, iris and fingerprint biometrics of a subject. The device includes a plurality of visible-light cameras and a plurality of infrared-light cameras capable of being triggered simultaneously to obtain a plurality of images from which a 3D image of the light field can be constructed. The device includes a plurality of visible-light illuminators and a plurality of infrared-light illuminators that allow images of a subject to be captured under different lighting profiles. The device may include an onboard control system that is capable of reconstructing a face region, an iris region and a fingerprint region from the 3D light-field image, and then extract a corresponding face template, an iris template, and a fingerprint template from the respective reconstructed regions. The extracted face, iris, and fingerprint templates may be used for enrollment and/or comparison against a biometric-template database associated with one or more watchlists.

Bolme, David S.↗
DOE OSTI2022

Conductive strip based mask for metallization of semiconductor devices

Methods of manufacturing a semiconductor device, and resulting semiconductor device are described. In an example, the method for manufacturing a semiconductor device include forming a semiconductor region and forming a metal seed region over the semiconductor region. The method can include placing a conductive strip over a first portion of the metal region, where the conductive strip is formed over the semiconductor region. The method can include bonding a contacting portion of the conductive strip to the first portion the metal region. The method can include etching a second portion of the metal region and where the conductive strip inhibits etching of the first portion of the metal region. In an example, the conductive strip can have a coating. In one example, the semiconductor device can be a solar cell.

14 SOLAR ENERGY↗