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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

PLZT capacitor and method to increase the dielectric constant

A ceramic-capacitor includes a first electrically-conductive-layer, a second electrically-conductive-layer arranged proximate to the first electrically-conductive-layer, and a dielectric-layer interposed between the first electrically-conductive-layer and the second electrically-conductive-layer. The dielectric-layer is formed of a lead-lanthanum-zirconium-titanate material (PLZT), wherein the PLZT is characterized by a dielectric-constant greater than 125, when measured at 25 degrees Celsius and zero Volts bias, and an excitation frequency of ten-thousand Hertz (10 kHz). A method for increasing a dielectric constant of the lead-lanthanum-zirconium-titanate material (PLZT) includes the steps of depositing PLZT to form a dielectric-layer of a ceramic-capacitor, and heating the ceramic-capacitor to a temperature not greater than 300.degree. C.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Control of power converters having integrated capacitor blocked transistor cells

Various examples of power converters including Integrated Capacitor Blocked Transistor (ICBT) cells and methods of control of power converters having ICBT cells are described. In one example, a power converter includes an upper arm including a plurality of upper ICBT cells connected in series to form a series connection path and a lower arm including a plurality of lower ICBT cells connected in series in the series connection path. A controller can be configured to provide a control signal pair to each of the upper ICBT cells and a complementary control signal pair to each of the lower ICBT cells to control the converter output. A capacitor voltage controller can be configured to balance a voltage potential among ICBT capacitors in at least one of the upper arm and the lower arm.

Yu, Jianghui↗
DOE OSTI2024

Optical device having a light-emitting structure and a waveguide integrated capacitor to monitor light

Examples described herein relate to an optical device with an integrated light-emitting structure to generate light and a waveguide integrated capacitor to monitor light. The light-emitting structure may emit light upon the application of electricity to the optical device. The waveguide integrated capacitor may be formed under the light-emitting structure to monitor the light emitted by the light-emitting structure. The waveguide integrated capacitor includes a waveguide region carrying at least a portion of the light. The waveguide region includes one or more photon absorption sites causing the generation of free charge carriers relative to an intensity of the light confined in the waveguide region resulting in a change in the conductance of the waveguide region.

Srinivasan, Sudharsanan↗
DOE OSTI2023

A 0.2–2 GHz Time-Interleaved Multistage Switched-Capacitor Delay Element Achieving 2.55–448.6 ns Programmable Delay Range and 330 ns/mm 2 Area Efficiency

Simulation of radar returns, full-duplex systems, and signal repeaters require hundreds of ns of programmable broadband radio frequency (RF) delay in the signal path to simulate large distances in the case of radar returns, for signal cancellation in full-duplex, and for isolation from reflections in signal repeaters. However, programmable broadband RF delay has been limited to ones of ns due to challenges in miniaturization with low loss and low power consumption. In this work, we present a 0.2–2 GHz digitally programmable RF delay element based on a time-interleaved multistage switched-capacitor (TIMS-SC) approach. The proposed approach enables hundreds of ns of broadband RF delay by employing sample time expansion in multiple stages of switched-capacitor storage elements. Further, the delay element was implemented in a 45 nm SOI CMOS process and achieves a 2.55–448.6 ns programmable delay range with < 0.12% delay variation across 1.8 GHz of bandwidth at maximum delay, 2.42 ns programmable delay steps, and 330 ns/mm 2 area efficiency. Through the proposed approach, the device shows minimal delay change across a -40 °C to 85 °C temperature range and < 0.25 dB gain variation across delay settings. The device achieves 26 dB gain, 7.4 dB noise figure, and consumes 74 mW from a 1 V supply with an active area of 1.36 mm 2 .

42 ENGINEERING↗
DOE OSTI2025

Upcycling Polyethylene Waste into Hybrid Graphitic Porous Carbon Materials Used in High‐Performance Zinc‐Ion Hybrid Capacitors

Polyethylene (PE) waste is a challenge to upcycle into useful materials because this plastic tends to decompose into volatile compounds when heated at relatively low temperatures. In this work, mixtures of PE wastes into a hybrid graphitic porous carbon (HGPC) by a thermal oxidation pretreatment step, with assistance of an inert solid additive (KCl), to functionalize, crosslink, and stabilize the PE waste followed by carbonization and catalytic graphitization steps with a potassium carbonate catalyst, are upcycled. The PE waste‐derived HGPC (PW‐HGPC) has a hybrid structure composed of graphene‐like carbon nanosheets grown on the surface of carbon particles, high porosity with specific surface area, up to 1,763 m 2 g −1 , and good graphitic degree with average Raman I 2D / I G ratios of 0.53. When used as cathode material for zinc‐ion hybrid capacitors, this PW‐HGPC exhibits an excellent specific capacity, up to 126.7 mAh g −1 , at high mass loading of 10 mg cm −2 . Moreover, PW‐HGPC exhibits remarkable cycling stability with capacity retention of >94% after 10 000 cycles. Additionally, the KCl is recycled and reused over five times. This method provides a new solution for upcycling PE wastes into high value‐added carbon materials, not only for zinc‐ion hybrid capacitors but also for other electrochemical energy storage device applications.

hybrid graphitic porous carbon↗
DOE OSTI2020

Evaluation of the DC bus link capacitors and power transistor modules in the qualification testing of PV inverters

To achieve useful, fair, and cost-effective design qualification and type approval testing for PV inverters, two procedures were developed and demonstrated to evaluate the bus link capacitors and power transistor—and where applicable, its module—for long-term reliability. We evaluate the inverter under simulated use conditions with heat run tests to find the highest operating temperatures reached by these components. The procedures are demonstrated in this study with a 4-kVA class string inverter. The maximum temperature of the DC bus link capacitors was determined to be 76.4°C when the ambient temperature was at the inverter's maximum rated temperature of 60°C with derating occurring. On the other hand, the power transistor module's maximum temperature using the heat sink temperature as the index, 92.6°C, occurred in an ambient of 40.8°C when derating was not occurring. The conditions found for upper temperatures exhibited by these components are, respectively, proposed for implementation in the dry heat and thermal cycling tests in the IEC 62093 “Power conversion equipment for photovoltaic systems – Design qualification testing” international standard draft so that the levels applied in the tests are in proportion to those experienced in the field. Finally as a result, fairer evaluation of inverter reliability is realized.

14 SOLAR ENERGY↗
DOE OSTI2015

Exfoliation of titanium oxide powder into nanosheets using hydrothermal reaction and its reassembly into flexible papers for thin-film capacitors

We have discovered a methodology to realize the fabrication of flexible metal oxide film using two-dimensional (2D) nanosheets. Atomic scale titanium oxide (TiO{sub x}) nanosheets were exfoliated from bulk TiO{sub x} powder that had a layered structure via the modified Sasaki’s method. The vacuum-assisted filtration generates films with laterally aligned TiO{sub x} nanosheets. The 2D sheet-like structure and hydrophilic nature of TiO{sub x} nanosheets enables the film consisting of TiO{sub x} nanosheets to be bendable. Also, we demonstrate the fabrication of electrochemical capacitors using this film. The mechanically flexible metal oxide film is expected to open up the possibility of fabricating flexible energy storage devices from 2D metal oxide nanosheets. - Graphical abstract: The modified Sasaki’s method, combined process of hydrothermal reaction and bulky ion exchange, enables to obtain TiO{sub x} monolayer nanosheets. The vacuum-assisted filtration generates bendable films with laterally aligned TiO{sub x} nanosheets. Also, we demonstrate the fabrication of electrochemical capacitors using this film. - Highlights: • TiO{sub x} single sheets, a novel 2-dimensional material, were exfoliated from bulk powders via the modified Sasaki’s method. • In our method, the acid treatment of TiO{sub x} bulk powders was simply modified by applying the hydrothermal reaction. • Then, the delamination procedures of large cation exchange were conducted following the method proposed by Sasaki et al. • Reassembly of TiO{sub x} sheets into flexible free-standing films was simply achieved via vacuum assisted filtration method. • TiO{sub x} films were used as a flexible supercapaictor electrode material.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2011

On the influence that the ground electrode diameter has in the propulsion efficiency of an asymmetric capacitor in nitrogen gas

In this work, the propulsion force developed in an asymmetric capacitor will be calculated for three different diameters of the ground electrode. The used ion source is a small diameter wire, which generates a positive corona discharge in nitrogen gas directed to the ground electrode. By applying the fluid dynamic and electrostatic theories, all hydrodynamic and electrostatic forces that act on the considered geometries will be computed in an attempt to provide a physical insight on the force mechanism that acts on the asymmetrical capacitors, and also to understand how to increase the efficiency of propulsion.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2013

Modeling the electrode geometry of co-planar capacitors for the microwave dielectric characterization of ceramic thin films

This paper describes the influence of co-planar electrode geometry on the measurement accuracy of microwave dielectric properties of sol-gel-derived Na{sub 0.5}Bi{sub 0.5}TiO{sub 3}-NaTaO{sub 3} thin films. The interdigital, co-planar capacitor configurations were prepared with E-beam lithography. A combination of analytical and numerical modelling was used for the optimization of co-planar, interdigital electrode structures for the thin-film characterization. We observed that the number of fingers, their length, as well as the gap between the fingers of the interdigital electrode structure of the co-planar capacitor have a pronounced influence on the accuracy of measurements.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Calculation and measurement of a neutral air flow velocity impacting a high voltage capacitor with asymmetrical electrodes

This paper deals with the effects surrounding phenomenon of a mechanical force generated on a high voltage asymmetrical capacitor (the so called Biefeld-Brown effect). A method to measure this force is described and a formula to calculate its value is also given. Based on this the authors derive a formula characterising the neutral air flow velocity impacting an asymmetrical capacitor connected to high voltage. This air flow under normal circumstances lessens the generated force. In the following part this velocity is measured using Particle Image Velocimetry measuring technique and the results of the theoretically calculated velocity and the experimentally measured value are compared. The authors found a good agreement between the results of both approaches.

42 ENGINEERING↗
DOE OSTI2014

Low leakage Ru-strontium titanate-Ru metal-insulator-metal capacitors for sub-20 nm technology node in dynamic random access memory

Improved metal-insulator-metal capacitor (MIMCAP) stacks with strontium titanate (STO) as dielectric sandwiched between Ru as top and bottom electrode are shown. The Ru/STO/Ru stack demonstrates clearly its potential to reach sub-20 nm technology nodes for dynamic random access memory. Downscaling of the equivalent oxide thickness, leakage current density (J{sub g}) of the MIMCAPs, and physical thickness of the STO have been realized by control of the Sr/Ti ratio and grain size using a heterogeneous TiO{sub 2}/STO based nanolaminate stack deposition and a two-step crystallization anneal. Replacement of TiN with Ru as both top and bottom electrodes reduces the amount of electrically active defects and is essential to achieve a low leakage current in the MIM capacitor.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Transparent capacitors based on nanolaminate Al{sub 2}O{sub 3}/TiO{sub 2}/Al{sub 2}O{sub 3} with H{sub 2}O and O{sub 3} as oxidizers

Transparent capacitors with nanolaminate Al{sub 2}O{sub 3}/TiO{sub 2}/Al{sub 2}O{sub 3} (ATA) hybrid dielectrics have been prepared on quartz glass by atomic layer deposition. The maximal capacitance density of 14 fF/μm{sup 2} at 1 kHz was obtained. Moreover, an ultralow leakage current density of 2.1 × 10{sup −9} A/cm{sup 2} at 1 V was realized by using O{sub 3} as the oxidizer. Fowler-Nordheim tunneling is the main mechanism of the leakage current at high fields, while several conduction mechanisms coexist at low fields. The AlZnO/ATA/AlZnO transparent capacitors exhibit an average optical transmittance of more than 80% in the visible range, which serve as good candidates for integration in transparent circuits.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Metal-oxide-semiconductor capacitors and Schottky diodes studied with scanning microwave microscopy at 18 GHz

We measured the DC and RF impedance characteristics of micrometric metal-oxide-semiconductor (MOS) capacitors and Schottky diodes using scanning microwave microscopy (SMM). The SMM consisting of an atomic force microscopy (AFM) interfaced with a vector network analyser (VNA) was used to measure the reflection S11 coefficient of the metallic MOS and Schottky contact pads at 18 GHz as a function of the tip bias voltage. By controlling the SMM biasing conditions, the AFM tip was used to bias the Schottky contacts between reverse and forward mode. In reverse bias direction, the Schottky contacts showed mostly a change in the imaginary part of the admittance while in forward bias direction the change was mostly in the real part of the admittance. Reference MOS capacitors which are next to the Schottky diodes on the same sample were used to calibrate the SMM S11 data and convert it into capacitance values. Calibrated capacitance between 1–10 fF and 1/C{sup 2} spectroscopy curves were acquired on the different Schottky diodes as a function of the DC bias voltage following a linear behavior. Additionally, measurements were done directly with the AFM-tip in contact with the silicon substrate forming a nanoscale Schottky contact. Similar capacitance-voltage curves were obtained but with smaller values (30–300 aF) due to the corresponding smaller AFM-tip diameter. Calibrated capacitance images of both the MOS and Schottky contacts were acquired with nanoscale resolution at different tip-bias voltages.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Modeling of n-InAs metal oxide semiconductor capacitors with high-κ gate dielectric

A qualitative analysis on capacitance-voltage and conductance data for high-κ/InAs capacitors is presented. Our measured data were evaluated with a full equivalent circuit model, including both majority and minority carriers, as well as interface and border traps, formulated for narrow band gap metal-oxide-semiconductor capacitors. By careful determination of interface trap densities, distribution of border traps across the oxide thickness, and taking into account the bulk semiconductor response, it is shown that the trap response has a strong effect on the measured capacitances. Due to the narrow bandgap of InAs, there can be a large surface concentration of electrons and holes even in depletion, so a full charge treatment is necessary.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Polarization of Bi{sub 2}Te{sub 3} thin film in a floating-gate capacitor structure

Metal-Oxide-Semiconductor (MOS) capacitors with Bi{sub 2}Te{sub 3} thin film sandwiched and embedded inside the oxide layer have been fabricated and studied. The capacitors exhibit ferroelectric-like hysteresis which is a result of the robust, reversible polarization of the Bi{sub 2}Te{sub 3} thin film while the gate voltage sweeps. The temperature-dependent capacitance measurement indicates that the activation energy is about 0.33 eV for separating the electron and hole pairs in the bulk of Bi{sub 2}Te{sub 3}, and driving them to either the top or bottom surface of the thin film. Because of the fast polarization speed, potentially excellent endurance, and the complementary metal–oxide–semiconductor compatibility, the Bi{sub 2}Te{sub 3} embedded MOS structures are very interesting for memory application.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Side-gate modulation effects on high-quality BN-Graphene-BN nanoribbon capacitors

High-quality BN-Graphene-BN nanoribbon capacitors with double side-gates of graphene have been experimentally realized. The double side-gates can effectively modulate the electronic properties of graphene nanoribbon capacitors. By applying anti-symmetric side-gate voltages, we observed significant upward shifting and flattening of the V-shaped capacitance curve near the charge neutrality point. Symmetric side-gate voltages, however, only resulted in tilted upward shifting along the opposite direction of applied gate voltages. These modulation effects followed the behavior of graphene nanoribbons predicted theoretically for metallic side-gate modulation. The negative quantum capacitance phenomenon predicted by numerical simulations for graphene nanoribbons modulated by graphene side-gates was not observed, possibly due to the weakened interactions between the graphene nanoribbon and side-gate electrodes caused by the Ga{sup +} beam etching process.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

The strain capacitor: A novel energy storage device

A novel electromechanical energy storage device is reported that has the potential to have high energy densities. It can efficiently store both mechanical strain energy and electrical energy in the form of an electric field between the electrodes of a strain-mismatched bilayer capacitor. When the charged device is discharged, both the electrical and mechanical energy are extracted in an electrical form. The charge-voltage profile of the device is suitable for energy storage applications since a larger portion of the stored energy can be extracted at higher voltage levels compared to a normal capacitor. Its unique features include the potential for long lifetime, safety, portability, wide operating temperature range, and environment friendliness. The device can be designed to operate over varied operating voltage ranges by selecting appropriate materials and by changing the dimensions of the device. In this paper a finite element model of the device is developed to verify and demonstrate the potential of the device as an energy storage element. This device has the potential to replace conventional energy storage devices.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Switchable diode-effect mechanism in ferroelectric BiFeO{sub 3} thin film capacitors

We investigate the mechanism of a switchable diode behavior observed in ferroelectric SrRuO{sub 3}/BiFeO{sub 3} (BFO)/SrRuO{sub 3} capacitors. We experimentally demonstrate that the switchable diode effect observed in the capacitors is induced by the polarization reversal in the BFO film. The conductivity in an Ohmic region in different oxidation states provides direct evidence that electron hole acts as the majority carrier, delivering p-type conduction. Density functional theory (DFT) calculations show that the p-type conduction arises from an unoccupied gap state of Fe{sup 4+} in an FeO{sub 5} pyramid which is derived from Bi vacancy. Our experimental and DFT study leads to the conclusion that the switchable diode effect originates from an asymmetric band bending in the top and bottom depletion layers modulated by ferroelectric polarization and oxygen vacancies.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗