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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
NASA NTRS2004

Subsurface Stress Fields in FCC Single Crystal Anisotropic Contacts

Single crystal superalloy turbine blades used in high pressure turbomachinery are subject to conditions of high temperature, triaxial steady and alternating stresses, fretting stresses in the blade attachment and damper contact locations, and exposure to high-pressure hydrogen. The blades are also subjected to extreme variations in temperature during start-up and shutdown transients. The most prevalent high cycle fatigue (HCF) failure modes observed in these blades during operation include crystallographic crack initiation/propagation on octahedral planes, and non-crystallographic initiation with crystallographic growth. Numerous cases of crack initiation and crack propagation at the blade leading edge tip, blade attachment regions, and damper contact locations have been documented. Understanding crack initiation/propagation under mixed-mode loading conditions is critical for establishing a systematic procedure for evaluating HCF life of single crystal turbine blades. This paper presents analytical and numerical techniques for evaluating two and three dimensional subsurface stress fields in anisotropic contacts. The subsurface stress results are required for evaluating contact fatigue life at damper contacts and dovetail attachment regions in single crystal nickel-base superalloy turbine blades. An analytical procedure is presented for evaluating the subsurface stresses in the elastic half-space, based on the adaptation of a stress function method outlined by Lekhnitskii. Numerical results are presented for cylindrical and spherical anisotropic contacts, using finite element analysis (FEA). Effects of crystal orientation on stress response and fatigue life are examined. Obtaining accurate subsurface stress results for anisotropic single crystal contact problems require extremely refined three-dimensional (3-D) finite element grids, especially in the edge of contact region. Obtaining resolved shear stresses (RSS) on the principal slip planes also involves considerable post-processing work. For these reasons it is very advantageous to develop analytical solution schemes for subsurface stresses, whenever possible.

Arakere, Nagaraj K.↗
NASA NTRS1999

Precision contact of the fingertip reduces postural sway of individuals with bilateral vestibular loss

Contact of the hand with a stationary surface attenuates postural sway in normal individuals even when the level of force applied is mechanically inadequate to dampen body motion. We studied whether subjects without vestibular function would be able to substitute contact cues from the hand for their lost labyrinthine function and be able to balance as well as normal subjects in the dark without finger contact. We also studied the relative contribution of sight of the test chamber to the two groups. Subjects attempted to maintain a tandem Romberg stance for 25 s under three levels of fingertip contact: no contact; light-touch contact, up to 1 N (approximately 100 g) force; and unrestricted contact force. Both eyes open and eyes closed conditions were evaluated. Without contact, none of the vestibular loss subjects could stand for more than a few seconds in the dark without falling; all the normals could. The vestibular loss subjects were significantly more stable in the dark with light touch of the index finger than the normal subjects in the dark without touch. They also swayed less in the dark with light touch than when permitted sight of the test chamber without touch, and less with sight and touch than just sight. The normal subjects swayed less in the dark with touch than without, and less with sight and touch than sight alone. These findings show that during quiet stance light touch of the index finger with a stationary surface can be as effective or even more so than vestibular function for minimizing postural sway.

NASA Discipline Neuroscience↗
NASA NTRS1998

Cell contact as an independent factor modulating cardiac myocyte hypertrophy and survival in long-term primary culture

Cardiac myocytes maintained in cell culture develop hypertrophy both in response to mechanical loading as well as to receptor-mediated signaling mechanisms. However, it has been shown that the hypertrophic response to these stimuli may be modulated through effects of intercellular contact achieved by maintaining cells at different plating densities. In this study, we show that the myocyte plating density affects not only the hypertrophic response and features of the differentiated phenotype of isolated adult myocytes, but also plays a significant role influencing myocyte survival in vitro. The native rod-shaped phenotype of freshly isolated adult myocytes persists in an environment which minimizes myocyte attachment and spreading on the substratum. However, these conditions are not optimal for long-term maintenance of cultured adult cardiac myocytes. Conditions which promote myocyte attachment and spreading on the substratum, on the other hand, also promote the re-establishment of new intercellular contacts between myocytes. These contacts appear to play a significant role in the development of spontaneous activity, which enhances the redevelopment of highly differentiated contractile, junctional, and sarcoplasmic reticulum structures in the cultured adult cardiomyocyte. Although it has previously been shown that adult cardiac myocytes are typically quiescent in culture, the addition of beta-adrenergic agonists stimulates beating and myocyte hypertrophy, and thereby serves to increase the level of intercellular contact as well. However, in densely-plated cultures with intrinsically high levels of intercellular contact, spontaneous contractile activity develops without the addition of beta-adrenergic agonists. In this study, we compare the function, morphology, and natural history of adult feline cardiomyocytes which have been maintained in cultures with different levels of intercellular contact, with and without the addition of beta-adrenergic agonists. Intercellular contact, communication, and transmission of contractile forces between myocytes appears to play a primary role in remodeling the 2-dimensional cell layer into a parallel alignment of elongated myocytes with highly developed intercalated disk-like junctions. This highly differentiated state is very stable, and cultures which achieve this state exhibit significantly greater longevity than more sparsely plated myocytes. These myocytes typically continue beating, and survive from 6 to more than 12 weeks in culture. When this level of contact and differentiation are not achieved, even among beta-adrenergic stimulated myocytes, contractile activity is not sustained, myofibrils atrophy, there is little or no development of junctional complexes, and the period of myocyte viability is typically no more than 5 weeks in vitro.

Non-NASA Center↗
DOE OSTI2013

Contact detection acceleration in pebble flow simulation for pebble bed reactor systems

Pebble flow simulation plays an important role in the steady state and transient analysis of thermal-hydraulics and neutronics for Pebble Bed Reactors (PBR). The Discrete Element Method (DEM) and the modified Molecular Dynamics (MD) method are widely used to simulate the pebble motion to obtain the distribution of pebble concentration, velocity, and maximum contact stress. Although DEM and MD present high accuracy in the pebble flow simulation, they are quite computationally expensive due to the large quantity of pebbles to be simulated in a typical PBR and the ubiquitous contacts and collisions between neighboring pebbles that need to be detected frequently in the simulation, which greatly restricted their applicability for large scale PBR designs such as PBMR400. Since the contact detection accounts for more than 60% of the overall CPU time in the pebble flow simulation, the acceleration of the contact detection can greatly enhance the overall efficiency. In the present work, based on the design features of PBRs, two contact detection algorithms, the basic cell search algorithm and the bounding box search algorithm are investigated and applied to pebble contact detection. The influence from the PBR system size, core geometry and the searching cell size on the contact detection efficiency is presented. Our results suggest that for present PBR applications, the bounding box algorithm is less sensitive to the aforementioned effects and has superior performance in pebble contact detection compared with basic cell search algorithm. (authors)

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗
DOE OSTI2017

Fabrication and Modeling of High-Efficiency Front Junction N-Type Silicon Solar Cells With Tunnel Oxide Passivating Back Contact

This paper reports on in-depth understanding, modeling, and fabrication of 23.8% efficient 4 cm 2 n-type Float Zone (FZ) silicon cells with a selective boron emitter and photolithography contact on front and tunnel oxide passivating contact on the back. Tunnel oxide passivating contact composed of a very thin chemically grown silicon oxide (~15 Å) capped with plasma-enhanced chemical vapor deposition (PECVD) grown 20 nm n + poly Si gave excellent surface passivation and carrier selectivity with very low saturation current density (~5 fA/cm 2 ). A high-quality boron selective emitter was formed using ion implantation and solid source diffusion to minimize metal recombination and emitter saturation current density. Process optimization resulted in a cell V oc of 712 mV, J sc of 41.2 mA/cm 2 , and FF of 0.811. Here, a simple methodology is used to model these cells which replaces tunnel oxide passivating contact region by electron and hole recombination velocities extracted from measured saturation current density of tunnel oxide passivating contact region and analysis. Using this approach and two-dimensional device modeling gave an excellent match between the measured and simulated cell parameters and efficiency, supporting excellent passivation and carrier selectivity of these contacts. Extended simulations showed that 26% cell efficiency can be achieved with this cell structure by further optimization of wafer quality, emitter profile, and contact design

14 SOLAR ENERGY↗
DOE OSTI2021

Compensated Contacts for Three-Terminal Transistor Solar Cells

The heterojunction bipolar transistor solar cell (HBTSC) is an alternative to conventional double-junction solar cells that combines the advantages of three-terminal architectures with a compact design. A critical part of the HBTSC fabrication is the implementation of the middle contact, the one associated to the base layer in the transistor structure, because this layer can be damaged by the diffusion of metallic species during contact annealing. As a solution we propose to implement a "compensated contact", that is, to leave a thin (< 200 nm) portion of emitter or collector between the base layer and the contact metals and compensate its doping during contact annealing. Using an Au/Zn/Au metal structure to compensate a 150 nm thick portion of the collector, we obtain a specific contact resistance ~8 10-4 ..omega.. cm2. This value is fairly invariant for annealing temperatures between 400 and 460 degrees C and annealing times between 2 and 5 minutes, and it does not improve by adding Pd to the metallic stack. Optimizing the compensated contact technology opens the path to the realization of III-V-material-based HBTSCs with open-circuit voltages and fill factors comparable to those of conventional multijunction architectures.

contact resistance↗
DOE OSTI2021

Novel Poly-Si:Ga/SiOx Passivating Contacts through Non-Equilibrium Doping

Poly-Si/SiOx passivating contacts are one of the key enablers for high-efficiency, low-cost c-Si solar cells. In recent years, record devices have reached efficiencies of 26% in the laboratory and 25% in the industry. The current cell structure utilizing a tunneling oxide passivating contact structure with a back phosphorus-doped poly- Si/SiOx passivating contact and a front boron diffused emitter suffers from large emitter recombination. Thus, replacing the front B diffused emitter with a p-type passivating contact is a route to overcome this deficiency. This gives rise to front/back poly-Si based passivating contacts. To address the low passivation performance of the B-doped poly-Si passivating contacts, we replace B with Ga as a novel p-type dopant to avoid dopant accumulation in the tunneling oxide, which is known to lead to large degradation loss in passivation quality. Here, we introduce a non-equilibrium method via pulsed laser melting to thermally melt and recrystallize the poly-Si and redistribute the dopants, achieving doping concentrations above the solid solubility limit (~4E19 cm-3). We demonstrate a good passivation quality with an iVoc of 721 mV with an active Ga doping concentration in poly-Si >1020 cm-3. Furthermore, we show a low contact resistivity of 33.2 +/- 9.3 mO cm2 using a diode model calculation. Finally, cross-section scanning spreading resistance microscopy was performed to determine the resistance profile across the non-homogeneously doped poly-Si layer.

c-Si↗
DOE OSTI2023

Pulsed Laser Annealed Ga Hyperdoped Poly‐Si / SiO x Passivating Contacts for High‐Efficiency Monocrystalline Si Solar Cells

Polycrystalline Si ( poly ‐Si)‐based passivating contacts are promising candidates for high‐efficiency crystalline Si solar cells. We show that nanosecond‐scale pulsed laser melting (PLM) is an industrially viable technique to fabricate such contacts with precisely controlled dopant concentration profiles that exceed the solid solubility limit. We demonstrate that conventionally doped, hole‐selective poly ‐Si/SiO x contacts that provide poor surface passivation of c ‐Si can be replaced with Ga‐ or B‐doped contacts based on non‐equilibrium doping. We overcome the solid solubility limit for both dopants in poly ‐Si by rapid cooling and recrystallization over a timescale of ∼25 ns. We show an active Ga dopant concentration of ∼3 × 10 20 cm −3 in poly ‐Si which is six times higher than its solubility limit in c ‐Si, and a B dopant concentration as high as ∼10 21 cm −3 . We measure an implied open‐circuit voltage of 735 mV for Ga‐doped poly ‐Si/SiO x contacts on Czochralski Si with a low contact resistivity of 35.5 ± 2.4 mΩ cm 2 . Scanning spreading resistance microscopy and Kelvin probe force microscopy show large diffusion and drift current in the p ‐ n junction that contributes to the low contact resistivity. Our results suggest that PLM can be extended for hyperdoping of other semiconductors with low solubility atoms to enable high‐efficiency devices.

14 SOLAR ENERGY↗
DOE OSTI2019

The Effect of Crystallographic Orientation and Nanoscale Surface Morphology on Poly -Si/SiO x Contacts for Silicon Solar Cells

High-efficiency crystalline silicon (Si) solar cells require textured surfaces for efficient light trapping. However, passivation of a textured surface to reduce carrier recombination is difficult. Here, we related the electrical properties of cells fabricated on a KOH-etched, random pyramidal textured Si surface to nanostructure of the passivated contact and the textured surface morphology. The effects of both microscopic pyramidal morphology and nanoscale surface roughness on passivated contacts consisting of a polycrystalline Si (poly-Si) deposited on top of an ultrathin, 1.5-2.2 nm, SiO x layer is investigated. Using atomic force microscopy we show a pyramid face, which is predominantly a Si(111) plane to be significantly rougher than a polished Si(111) surface. This roughness results in a nonuniform SiOx layer as determined by transmission electron microscopy (TEM) of a poly-Si/SiO x contact. Our device measurements also show an overall more resistive, and hence thicker SiO x layer over the pyramidal surface as compared to a polished Si(111) surface, which we relate to increased roughness. Using electron-beam-induced current measurements of poly-Si/SiO x contacts we further show that the SiO x layer near the pyramid valleys is preferentially more conducting, and hence likely thinner than over pyramid tips, edges and faces. Hence, both the microscopic pyramidal morphology and nanoscale roughness lead to nonuniform SiO x layer, thus leading to poor poly-Si/SiO x contact passivation. Finally, we report >21% efficient and =80% fill factor front/back poly-Si/SiO x solar cells on both single-side and double-side textured wafers without the use of transparent conductive oxide layers and show that the poorer contact passivation on a textured surface is limited to boron-doped poly-Si/SiO x contacts.

14 SOLAR ENERGY↗
DOE OSTI2014

Physical model of the contact resistivity of metal-graphene junctions

While graphene-based technology shows great promise for a variety of electronic applications, including radio-frequency devices, the resistance of the metal-graphene contact is a technological bottleneck for the realization of viable graphene electronics. One of the most important factors in determining the resistance of a metal-graphene junction is the contact resistivity. Despite the large number of experimental works that exist in the literature measuring the contact resistivity, a simple model of it is still lacking. In this paper, we present a comprehensive physical model for the contact resistivity of these junctions, based on the Bardeen Transfer Hamiltonian method. This model unveils the role played by different electrical and physical parameters in determining the specific contact resistivity, such as the chemical potential of interaction, the work metal-graphene function difference, and the insulator thickness between the metal and graphene. In addition, our model reveals that the contact resistivity is strongly dependent on the bias voltage across the metal-graphene junction. This model is applicable to a wide variety of graphene-based electronic devices and thus is useful for understanding how to optimize the contact resistance in these systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Microstructure of V-based ohmic contacts to AlGaN/GaN heterostructures at a reduced annealing temperature

Ohmic contacts with V/Al/Ni/Au and V/Ni/Au metalization schemes were deposited on AlGaN/GaN heterostructures. The dependence of the specific contact resistance on the annealing conditions and the V:Al thickness ratio was shown. For an optimized electrode stack, a low specific contact resistance of 8.9 × 10{sup −6} Ω cm{sup 2} was achieved at an annealing temperature of 650 °C. Compared to the conventional Ti/Al/Ni/Au contact, this is a reduction of 150 K. The microstructure and contact formation at the AlGaN/metal interface were investigated by transmission electron microscopy including high-resolution micrographs and energy dispersive X-ray analysis. It was shown that for low-resistive contacts, the resistivity of the metalization has to be taken into account. The V:Al thickness ratio has an impact on the formation of different intermetallic phases and thus is crucial for establishing ohmic contacts at reduced annealing temperatures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Point contacts in encapsulated graphene

We present a method to establish inner point contacts with dimensions as small as 100 nm on hexagonal boron nitride (hBN) encapsulated graphene heterostructures by pre-patterning the top-hBN in a separate step prior to dry-stacking. 2- and 4-terminal field effect measurements between different lead combinations are in qualitative agreement with an electrostatic model assuming point-like contacts. The measured contact resistances are 0.5–1.5 kΩ per contact, which is quite low for such small contacts. By applying a perpendicular magnetic field, an insulating behaviour in the quantum Hall regime was observed, as expected for inner contacts. The fabricated contacts are compatible with high mobility graphene structures and open up the field for the realization of several electron optical proposals.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Non-Equilibrium Doping of Poly-Si:Ga/SiOx Passivating Contacts Solar Cells

In this contribution, we show that Ga-hyperdoped poly-Si/SiOx contacts are realized by pulsed laser annealing and post-hydrogenation. The motivation behind this work is to improve the inferior performance of boron-doped poly- Si/SiOx contacts when compared to the phosphorus-doped contacts. Here we used Ga as a novel p-type dopant to replace B, as B is known to accumulate at the interface between the oxide and the crystalline silicon and cause recombination. Due to a high diffusivity of Ga in oxide and a much higher segregation coefficient (Si:SiOx), Ga is shown to be immune to the oxide pileup phenomenon. However, Ga has a low solid solubility limit in Si (5x10^19 cm-3), which is not enough to form a low resistivity contact. To overcome this problem, we explored pulsed laser annealing via excimer laser by varying the laser energy densities and pulses. The passivation and electrical properties are studied systematically using photoluminescence (PL), secondary ion mass spectrometry (SIMS), and Van der Pauw-Hall measurements. We show an active Ga doping concentration above 1x10^20 cm^-3, which is above the solid solubility limit of Ga in Si. Good passivation quality is demonstrated with the highest implied Voc (iVoc) of 721 mV on single side polished samples. Furthermore, a low diode contact resistivity of ~22 m..omega.. cm^2 is obtained using Ti/Ag contacts, with minimal metal-to-semiconductor contact resistivity of 0.9 m..omega.. cm^2.

non-equilibrium doping↗
DOE OSTI2026

C‐Cracking of Brittle‐Material Spheres From Eccentric Hertzian Contact

Contact of brittle-material spheres can occur while they are manufactured, handled, or used in operation as roller elements or in deformably processed composite material. Statistically, the directional contact between two spheres will nearly always be oblique or eccentric in an unconfined and mobile sphere population. Although analyses of oblique contact exist, the portrayal of its maximum (tensile) first principal stress ( S 1 ) field is lacking. This information is needed for improved judgment of the prospect of crack initiation. Given these, the S 1 due to eccentric contact and subsequent crack initiation was analyzed using finite element analysis (FEA) and corroborative demonstration of c-crack creation. The FEA shows that an asymmetric S 1 field is created about the contact patch and is caused by superimposed shear intrinsic to eccentric contact. A crack will initiate if the maximum S 1 exceeds the material's tensile strength, and its field will cause the crack to propagate and arrest to form a C-shaped crack, or c-crack. C-crack initiation trends with lower applied forces, with greater amount of contact eccentricity, higher coefficient of friction, and smaller spherical radius. Finally, these metrics deserve recognition, especially when c-cracked brittle-material spheres are used in a system whose functionality or reliability is potentially compromised by the c-cracks.

Hertzian contact↗
DOE OSTI2019

Ohmic Contacts to CVD Diamond with Boron-Doped Delta Layers

Various methods for the formation of ohmic contacts to boron-doped δ layers in CVD-diamond epitaxial structures are investigated. In the first variant, an additional thin heavily doped layer was formed on the diamond surface to which an ohmic contact is formed. Then, the surface p{sup +} layer between the contact pads is etched out; therefore, the current in the structure flows only through a buried δ layer. In the second approach, the doped diamond selectively grows in the contact windows under a metallic mask after preliminary etching of the undoped diamond layer (cap) up to the δ layer. In this case, the heavily doped p{sup +} layer forms an end contact to the δ layer. These two variants differ in terms of the conditions of applicability, the complexity of the manufacturing technology, the value of the contact resistance, and can be used to solve problems in which it is necessary to have a different quality of the contacts, such as the formation of transistor structures or test cells for measuring physical characteristics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Algebraic Multigrid with Filtering: An Efficient Preconditioner for Interior Point Methods in Large-Scale Contact Mechanics Optimization

Large-scale contact mechanics simulations are crucial in many engineering fields such as structural design and manufacturing. In the frictionless case, contact can be modeled by minimizing an energy functional; however, these problems are often nonlinear, nonconvex, and increasingly difficult to solve as mesh resolution increases. In this work, we employ a Newton-based interior-point (IP) filter line-search method, an effective approach for large-scale constrained optimization. While this method converges rapidly, each iteration requires solving a large saddle-point linear system that becomes ill-conditioned as the optimization process converges, largely due to IP treatment of the contact constraints. Such ill-conditioning can hinder solver scalability and increase iteration counts with mesh refinement. Here, to address this, we introduce a novel preconditioner, algebraic multigrid with filtering (AMGF), tailored to the Schur complement of the saddle-point system. Building on the classical AMG solver, commonly used for elasticity, we augment it with a specialized subspace correction that filters near null space components introduced by contact interface constraints. Through theoretical analysis and numerical experiments on a range of linear and nonlinear contact problems, we demonstrate that the proposed solver achieves mesh independent convergence and maintains robustness against the ill-conditioning that notoriously plagues IP methods. These results indicate that AMGF makes contact mechanics simulations more tractable and broadens the applicability of Newton-based IP methods in challenging engineering scenarios. More broadly, AMGF is well suited for problems, optimization or otherwise, where solver performance is limited by a low-dimensional subspace, such as those arising from localized constraints, interface conditions, or model heterogeneities. This makes the method widely applicable beyond contact mechanics and constrained optimization.

Mathematics and Computing↗
DOE OSTI2025

Characterization of Performance Degradation Mechanisms in Low-Cost High Throughput DI-O3 Layer for Passivated Contact Silicon Solar Cells

Characterization and mitigating performance limiting defects in Silicon (Si) PV is one of key areas to be addressed to improve PV hardware costs and energy yield in order to lower the levelized cost of energy (LCOE) of installed PV cost to $0.02/kWh. As Si PV cells efficiencies have surpassed 22% and approaching 23%, the recombination at the metal contacts have become the focus point to be addressed. Passivated contact technologies—having a heterojunction with a band-gap larger than silicon between the metal and silicon—have emerged as a great potential for future highand ultrahigh-efficiency solar cells, as it concurrently reduces recombination and increases carrier selectivity, by incorporating thin films within the contact structure. Passivated contact Si solar cell technologies use a wide variety of tunnel layers—playing a crucial role to passivate metal contacts and tunnel charge carriers—including stoichiometric silicon oxide (SiO 2 ) grown by thermal oxidation and Low-Pressure Chemical Vapor Deposition (LPCVD) technique and silicon oxide (SiO x ) by hot nitric acid. However, thorough investigations on understanding the failure and performance degradation mechanisms associated with tunnel layers are still limited to date. Unlocking those degradation characteristics in crucial tunnel layers could improve the reliability and energy yield of passivated contact Si solar cells. Besides, the technique of growing aforementioned tunneling layers are low throughput, and requires high temperature processes and/or a vacuum environment. In this project, we investigated the performance degradation mechanisms of a low-cost high-throughput ozonated oxide (DI-O 3 ) tunnel layer for the passivated contact Si solar cells.

14 SOLAR ENERGY↗
DOE OSTI2019

Approaches to Metallization for Poly-Si/SiOx Passivated Contacts

Recent improvements in Si solar cell efficiency beyond 25% have used doped poly-Si/SiOx or a-Si:H passivated contacts, the former culminating in a 25.7% cell with a n-poly-Si/SiOx rear contact 1 that is fundamentally compatible with screen printing and firing. However, metallization of the <100 nm thick stack is challenging and can limit open-circuit voltage (Voc) 2, 3. The goal of the work presented here is to develop metallization routes for poly-Si/SiOx passivated contacts with acceptable contact resistivity and minimized Voc loss. This is approached through incremental as well as disruptive improvements to metal evaporation. We examine all aspects of the poly-Si/SiOx process chain that can contribute to contact performance, including poly-Si/SiOx properties, passivation routes, capping layers, and metal deposition methods and post-treatments. We also discuss how to best quantify the contact resistivity that exists while operating a solar cell at maximum power point. Finally, we present two novel approaches to contacting poly-Si/SiOx - a thermally evaporated ITO interlayer, and a transparent conducting adhesive.

14 SOLAR ENERGY↗