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Improved technique makes it possible to form low-resistivity {nearly equal to 10(Sup-6) ohm cm(Sup2)} electrical contacts on indium phosphide semiconductor devices without damaging devices. Layer of AgP2 40 Angstrom thick deposited on InP before depositing metal contact. AgP2 interlayer sharply reduces contact resistance, without need for sintering.
Thermal property analysis of connector contacts to find basic electric parameters, and to determine norms for contact and transitional resistance valve
A process for fabricating gold/gallium arsenide structures, in situ, on molecular beam epitaxially grown gallium arsenide. The resulting interface proves to be Ohmic, an unexpected result which is interpreted in terms of increased electrode interdiffusion. More importantly, the present invention surprisingly permits the fabrication of Ohmic contacts in a III-V semiconductor material at room temperature. Although it may be desireable to heat the Ohmic contact to a temperature of, for example, 200 degrees Centigrade if one wishes to further decrease the resistance of the contact, such low temperature annealing is much less likely to have any deleterious affect on the underlying substrate. The use of the term in situ herein, contemplates continuously maintaining an ultra-high vacuum, that is a vacuum which is at least 10.sup.-8 Torr, until after the metallization has been completed. An alternative embodiment of the present invention comprising an additional step, namely the termination of the gallium arsenide by a two monolayer thickness of epitaxial aluminum arsenide as a diffusion barrier, enables the recovery of Schottky barrier behavior, namely a rectified I-V characteristic. The present invention provides a significant breakthrough in the fabrication of III-V semiconductor devices wherein excellent Ohmic contact and Schottky barrier interfaces to such devices can be achieved simply and inexpensively and without requiring the high temperature processing of the prior art and also without requiring the use of exotic high temperature refractory materials as substitutes for those preferred contact metals such as gold, aluminum and the like.
The Pd contact to GaAs was studied using backscattering, Auger analysis, and sheet resistance measurements. Several metallurgical phases were present at low temperatures, but PdGa was the dominant phase in samples annealed at 500 C. Ti/Pd/Ag contacts appeared to have the lowest contact resistance. Etchback epitaxy (EBE) was compared to saturated melt epitaxy (SME) method of growing liquid phase epitaxial layers. The SME method resulted in a lower density of Ga microdroplets in the grown layer, although the best solar cells were made by the EBE method. Photoluminescence was developed as a tool for contactless analysis of GaAs cells. Efficiencies of over 8 percent were measured at 250 C.
The invention of an apparatus for imaging soft X-ray and ultraviolet electromagnetic radiation and charged particles was described. The apparatus includes a pair of microchannel electron multiplier plates connected in a cascaded chevron configuration which intercepts an incident beam of radiation or charged particles. Incident photons or charged particles strike the front surface of the chevron configuration causing emission of electrons. The electrons are accelerated by a voltage gradient and strike the inner side walls of the individual channels, causing emission of secondary electrons. Accelerated and multiplied secondary electrons impinge upon a resistive anode after they transverse the chevron configuration. A pulse position circuit converts the magnitude or transit time of the currents flowing from the point of impact of the electrons on the resistive anode to four contact electrodes mounted on their periphery of the resistive anode into the spatial coordinates of electron impact.
The properties of eleven alloys were investigated to select an improved bearing material for the High Pressure Oxygen Turbo Pump which delivers liquid oxygen to the Space Shuttle Main Engine. The alloys, selected through detailed literature analysis, X 405, MRC-2001, T440V, 14-4/6V, D-5, V-M Pyromet 350, Stellite 3, FerroTic CS-40, Tribaloy 800, WD-65, and CBS-600. The alloys were tested in hardness, corrosion resistance, wear resistance, fatigue resistance, and fracture toughness tests, and their performance was compared with the baseline 440C test alloy. As a result, five alloys were eliminated, leaving the remaining six (X 405, MRC-2001, T440V, 14-4/6V, D-5, and WD-65 to be evaluated in the next phase of NASA tests which will include fracture toughness, rolling contact fatigue, wear resistance, and corrosion resistance. From these, three alloys will be selected, which will be made into ninety bearings for subsequent testing.
Materials were surveyed to provide candidates for an all metal electrode paste system. These consisted of a major constituent metal powder, a low melting metal powder suitable for a liquid phase sintering medium, and a powder material suitable as an etchant for silicon dioxide at sintering temperatures. By means of thermal gravimetric analysis a suitable binder was identified for low temperature fired inks. The all metal ink concept was first demonstrated with the silver system to avoid the problems of limited process windows encountered with base metal systems. A number of solid materials capable of selectively etching silicon dioxide at modest temperatures were identified. A paste with silver fluoride was screened onto N-type silicon with 5 ohm cm resistivity. The resulting contact pads had excellent adhesion but were not electrically ohmic. Metallurgically, these contacts have equal or better grain structure as commercial inks fired at the same temperatures.
A surface heater was developed using a graphite fiber-epoxy composite as the heating element. This heater can be thin, highly electrically and thermally conductive, and can conform to an irregular surface. Therefore it may be used in an aircraft's thermal deicing system to quickly and uniformly heat the aircraft surface. One-ply of unidirectional graphite fiber-epoxy composite was laminated between two plies of fiber glass-epoxy composite, with nickel foil contacting the end portions of the composite and partly exposed beyond the composites for electrical contact. The model heater used brominated P-100 fibers from Amoco. The fiber's electrical resistivity, thermal conductivity and density were 50 micro ohms per centimeter, 270 W/m-K and 2.30 gm/cubic cm, respectively. The electricity was found to penetrate through the composite in the transverse direction to make an acceptably low foil-composite contact resistance. When conducting current, the heater temperature increase reached 50 percent of the steady state value within 20 sec. There was no overheating at the ends of the heater provided there was no water corrosion. If the foil-composite bonding failed during storage, liquid water exposure was found to oxidize the foil. Such bonding failure may be avoided if perforated nickel foil is used, so that the composite plies can bond to each other through the perforated holes and therefore lock the foil in place.
A surface heater was developed using a graphite fiber-epoxy composite as the heating element. This heater can be thin, highly electrically and thermally conductive, and can conform to an irregular surface. Therefore it may be used in an aircraft's thermal deicing system to quickly and uniformly heat the aircraft surface. One-ply of unidirectional graphite fiber-epoxy composite was laminated between two plies of fiber glass-epoxy composite, with nickel foil contacting the end portions of the composite and partly exposed beyond the composites for electrical contact. The model heater used brominated P-100 fibers from Amoco. The fiber's electrical resistivity, thermal conductivity and density were 50 micro ohms per centimenter, 270 W/m-K and 2.30 gm/cubic cm, respectively. The electricity was found to penetrate through the composite in the transverse direction to make an acceptably low foil-composite contact resistance. When conducting current, the heater temperature increase reached 50 percent of the steady state value within 20 sec. There was no overheating at the ends of the heater provided there was no water corrosion. If the foil-composite bonding failed during storage, liquid water exposure was found to oxidize the foil. Such bonding failure may be avoided if perforated nickel foil is used, so that the composite plies can bond to each other through the perforated holes and therefore lock the foil in place.
The workshop considered the GaAs solar cell capability and promise in several steps: (1) maximum efficiency; (2) space application; (3) major technology problems (AR coating optimization, contacts); (4) radiation resistance; (5) cost and availability; and (6) alternatives. The workshop believes that GaAs solar cells are fast approaching the fulfillment of their potential as candidates for space cells. A maximum efficiency of 20 to 31 percent AMO can be reasonably expected from GaAs based cells, and this may go a little higher with concentration. The use of concentration in space needs to be more carefully evaluated.
The feasibility of a copper-base metallization for shallow-junction cells applied in flexible solar arrays in space is discussed. This type of metallization will reduce usage of precious metals (such as silver), increase case of bonding (by welding or by soldering) and eliminate heavy high Z interconnects (such as molybdenum). The main points of concern are stability against thermally induced diffusion of copper into silicon which causes degradation of shallow cell junctions, and low series resistance of the contact with semiconductor which promotes cell efficiency.
The development of fundamental Gunn sources for D-band frequencies requires improvements of doping profiles, processing technology, and circuit design. We have developed a technology for fabricating InP Gunn diodes using an InGaAs etch-stop layer between the InP substrate and the device layers. The epitaxial layers were grown by CBE. During device processing, the substrate is completely removed. Substrateless devices with an n(+) InGaAs cap layer are expected to have reduced contact and series resistances, and skin effect losses. This technology gives better uniformity and control of the device geometry across the processed chip. InP Gunn devices with a 1.7 micron long active region (doping : 9 x 10(exp 15) cm(exp -3)) have been mounted on copper heat sinks. Two tapered leads were then bonded to the diode and to four quartz standoffs. As a preliminary result, an output power of 13 mW at 82 GHz was obtained. Based on these RF measurements, we determine appropriate material parameters to be used in the Ensemble Monte Carlo model. Subsequently, we use this model to design and evaluate the performance of InP Gunn Devices for D-band frequencies. Using the same technology, we are currently processing Gunn devices with a 1 micron long active region for operation at higher frequencies.
Summary of highlights of the Convective Heating Improvement for Emergency Fire Shelters (CHIEFS) taskunder NASA. CHIEFS was tasked with providing the US Forest Service with an emergency fire shelter forimproved resistance to flame contact. Emphasis is on the final shelter designs at task close-out (end of FY17).
Unreinforced woven fabrics have been implemented in a variety of high performance applications, including body armor, deployable structures, and as the reinforcement material in composites. Multiscale modeling techniques have significantly improved the capabilities of simulation-based tools to capture fabric mechanics efficiently and accurately, but often lack in their prediction of failure and require pairing with finite element analysis (FEA) software, limiting their application to the design of ‘fit-for-purpose’ materials. NASA’s Multiscale Analysis Tool (NASMAT) is a standalone multiscale program that has been traditionally used in the analysis of reinforced composites materials. More recently, it has been amended to simulate unreinforced fabric behavior by allowing the geometric state of the tows to change with applied loading due to the lack of a reinforcement material, such as the matrix seen in composites. Previous work has shown the ability of NASMAT to capture nonlinear macroscale behavior by predicting geometric changes in the state of each subcell as a function of the applied loading and allowing each subcell in the analysis to rotate according to these predicted changes, as well as predict nonlinear behavior due to the fiber breakage failure mode. In this work, the capability of predicting the onset and propagation of failure in plain woven fabrics in NASMAT is presented for the yarn pullout failure mode, which occurs when a fabric is loaded at an off-axis angle relative to the warp of weft tow direction. Yarn pullout behavior is initiated by determining the applied load in which the shear resistance of the contact area between yarn families is overcome. When failure is initiated, yarn pullout is determined to have occurred when the applied displacement, calculated from global strain, exceeds the deformed position of a given contact points between yarn families, determined from pin-joint kinematics. Contact points where pullout has occurred contribute to a global damage parameter used to modify the homogenized stiffness of the fabric, resulting in nonlinear behavior observed at the macroscale. The off-axis loading behavior and yarn pullout failure theory have been developed and implemented into NASMAT such that users can simulate off-axis tensile behavior of fabrics in a single, standalone multiscale tool. Simulations are compared to uniaxial tensile tests at various off-axis angles to demonstrate the capability of the tool in its prediction of both the onset of failure at each off-axis angles and the stress-strain behavior as failure progresses.
Methods have been found to apply an adherent and humidity resistant silver-only front contact to n on p silicon solar cells. The critical processing step was the removal of the diffused oxide layer. Humidity resistance is superior to present day commercial titanium-silver contacts and the electrical characteristics of the cells are excellent. Titanium, which is degraded by humidity and which is a source of heavy metal poisoning, has been eliminated from the contact.
Carrier diffusion from heavily doped contact regions has been experimentally monitored with resistivity measurements of variable thickness Si:P extrinsic photoconductors (n(+) -n-n(+)). Modeling of free carrier diffusion at the interface of heavily doped contacts and highly resistive bulk at low temperatures predicts extended regions (5-30 microns) of excess carriers in high purity materials so that, in thin device structures, free carrier diffusion profiles from each contact will overlap and determine the resistivity of the device. In this work, a decrease in resistivity of four orders of magnitude was observed in a 5-micron thick structure compared to a 10-micron thick device. The resistivity of an ohmic structure in the thin limit is strongly dependent on the bulk and near-contact compensation, and resistivity measurements can be used as a sensitive measure of compensation at interfaces or in the tail of implanted layers.
TiPdAg and Al contact systems on p/n cells for humidity resistance and strength
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