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At least 307 records · Page 17
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Properties of Semipolar GaN Grown on a Si(100) Substrate

Semipolar GaN layers synthesized on a nanostructured Si(100) substrate are studied. It is shown that using a Si(100) nanoprofile combined with Si{sub x}N{sub y} nanostrips on top of nanostructures can yield, via metal-organic chemical-vapor deposition, GaN(10 1-bar 2) layers. An additional SiC buffer layer makes it possible to obtain GaN(10 1-bar 1) layers with a full-width at half-maximum of the diffraction-curve of ω{sub θ} ≈ 35′ arcmin. It is found that the luminescence properties of the semipolar layers are mostly due to basal plane stacking faults BSF{sub S}-I{sub 1}, in contrast to polar layers in which these properties are mostly due to the recombination of excitons.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Additional Confirmatory LBL Analysis of AGR-5/6/7 Compacts and Over-Coated Particles

Fuel compacts for the Advanced Gas Reactor Fuel Development and Qualification (AGR) Program’s AGR-5/6/7 irradiation test in the Idaho National Laboratory (INL) Advanced Test Reactor (ATR) were fabricated by BWX Technologies Nuclear Operations Group (BWXT NOG) located in Lynchburg, Virginia. Two compact packing fractions (PFs) were produced - nominally, 40% PF and 25% PF - in which the tristructural-isotropic (TRISO)-coated particle volume was targeted to be approximately 40% and 25% of the total compact volume, respectively. The TRISO coatings were deposited using a 150 mm diameter fluidized-bed chemical vapor deposition (CVD) furnace on spherical kernels that were nominally 425 μm in diameter. The kernels were from kernel composite Lot J52R-16-69317, which contained low-enriched uranium (15.5% 235 U) in a mixture of uranium carbide and uranium oxide (UCO). Kernels were coated with four concentric CVD layers: a porous carbon buffer layer that was nominally 100 μm thick, an inner pyrolytic carbon (IPyC) layer that was nominally 40 μm thick, a silicon carbide (SiC) layer that was nominally 35 μm thick, and an outer pyrolytic carbon (OPyC) layer that was nominally 40-μm-thick. Coated particle composite J52R-16-98005 was overcoated (OC) with a graphite/resin blend, and these OC TRISO particles were pressed to form cylindrical compacts that were nominally a half inch in diameter and one inch long.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2025

Multimetallic Layered Composites (MMLCs) for Rapid, Economical Advanced Reactor Deployment (Final Report)

This project focused on the development of multi-metallic layered composites (MMLCs) for advanced fission reactor technologies. There are many instances where one alloy or material simply cannot meet all the demands thrown at it by a reactor system, or cannot allow it to perform as strongly as one would like. Instead of focusing all our effort on developing one perfect alloy, we seek to leverage the design principle of “separation of functionality,” used in many other arenas in design, to boost performance beyond single alloys alone. One illustrative example shows the power of this approach for molten salt-cooled reactors: A three meter tall, three meter diameter reactor vessel made of Incoloy 800 was quoted at $\$$500k in 2018. A Hastelloy N vessel was quoted at $\$$5M. An MMLC vessel, in which a layer of Hastelloy N would be weld-overlaid onto Incoloy 800, was quoted at $\$$700k, and it would achieve the same performance. The potential economic gains of leveraging this approach are therefore substantial. At a minimum, each MMLC would contain one core structural layer and one coolant-facing corrosion-resistant layer. Sometimes, MMLCs required buffer layers, as the structural and corrosion-resistant layers were metallurgically incompatible. In other words, they didn’t always play nice, thus separating layers compatible with both functioned as intermediaries to keep the composite together. However, in doing so we inevitably produce new interfaces, where new issues can arise. Therefore, this project focused on what happens at these interfaces from a combination of high temperatures, irradiation, corrosion, and time. After all, a reactor makes money when it is operating, and outages of any kind erode its economic viability. First, we set out to experimentally prove that MMLCs for at least two advanced reactor systems can be made, today, in US domestic facilities. In this respect we were successful – one MMLC (a Ni-201/Incoloy 800H composite) was successfully made and drawn into two-inch coolant piping. Others were attempted, though new issues relating to cracking in vanadium layers for one and radiation damage performance of the corrosion-resistant layer in another prevented us from moving further in those specific arenas – these are engineering problems which deserve continued focus after this project. Additional experimental work focused on long-term corrosion testing of the outermost layers of the salt-cooled and liquid lead-cooled MMLC concepts, which would then be fed into predictions of how long the MMLCs could last. Next, computational (thermodynamics and atomistic) simulation studies studied how much we expect the interfaces to “blend,” due to the mixing action of neutron irradiation. This eats into both the margin for the structural layer of each MMLC, as dilution from the corrosion-resistant layer into the structural layer would decrease the total load-bearing capacity of an MMLC of finite size. On the other hand, dilution of the corrosion-resistant layer into the structural layer further reduced the margin of corrodible material, reducing the lifetime of the MMLC or necessitating extra thickness to be imparted to the MMLC to meet its functional requirements. Work here focused on irradiation-induced segregation to predict new phases which may embrittle the MMLCs, as well as quantifying irradiation-induced mixing at each interface. The results showed that mixing is expected, but it is both steady and therefore predictable, and not lifetime-limiting for most MMLC concepts – it simply has to be accounted for in calculations of reactor performance when utilizing an MMLC. Then, full-core simulations using the experimentally-derived corrosion data, the computationally discovered irradiation-induced mixing data (partially validated by experiment), and existing, benchmarked core designs for large and small sized reactor concepts (one salt-cooled, one lead-cooled) were conducted to quantify any expansion of reactor operating envelopes achieved by utilizing these MMLCs. This new framework, called REX (Reactor Envelope Expansion), incorporates a combination of core neutronics, thermal hydraulics, and the material performance data derived from this project to see how using an MMLC expands advanced fission reactor operating envelopes. It was discovered that in some cases, MMLC utilization does indeed increase the maximum operating temperatures and cycle lengths of reactor concepts, while in other cases it does not. Finally, our tech-to-market (T2M) strategy was not necessarily to create specific embodiments of MMLCs for immediate sale (because getting into the nuclear market is incredibly slow and laden with regulation, this is a long-term goal), but rather immediate stimulation of US industry using the design approach of MMLCs derived from this project. In this respect we were successful, as one of the PhD students funded on this project co-founded Allium Engineering, Inc., which created a stainless steel / low-alloy steel MMLC to function as chloride corrosion-resistant rebar for embedding into concrete structures. Allium Engineering continues to be successful, having recently opened their first factory as of this writing.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2022

AlN quasi-vertical Schottky barrier diode on AlN bulk substrate using Al 0.9 Ga 0.1 N current spreading layer

Abstract An aluminum nitride (AlN) quasi-vertical Schottky barrier diode (SBD) was fabricated on an AlN bulk substrate. An undoped AlN layer, a Si-doped Al 0.9 Ga 0.1 N current spreading layer and an AlN buffer layer were grown by plasma-enhanced molecular beam epitaxy. The epitaxial AlN layer was etched down to the n-Al 0.9 Ga 0.1 N layer to form an Ohmic contact. Ni/Au and V/Al/Ni/Au were deposited on the top AlN layer as Schottky contacts and on the exposed n-Al 0.9 Ga 0.1 N layer as Ohmic contacts, respectively. The Ohmic characteristics on the n-Al 0.9 Ga 0.1 N layer, capacitance–voltage ( C – V ) and current–voltage ( I – V ) characteristics of the AlN SBD were investigated.

Physics↗
NASA NTRS1991

Whiskerless Schottky diode

A Schottky diode for millimeter and submillimeter wave applications is comprised of a multi-layered structure including active layers of gallium arsenide on a semi-insulating gallium arsenide substrate with first and second insulating layers of silicon dioxide on the active layers of gallium arsenide. An ohmic contact pad lays on the silicon dioxide layers. An anode is formed in a window which is in and through the silicon dioxide layers. An elongated contact finger extends from the pad to the anode and a trench, preferably a transverse channel or trench of predetermined width, is formed in the active layers of the diode structure under the contact finger. The channel extends through the active layers to or substantially to the interface of the semi-insulating gallium arsenide substrate and the adjacent gallium arsenide layer which constitutes a buffer layer. Such a structure minimizes the effect of the major source of shunt capacitance by interrupting the current path between the conductive layers beneath the anode contact pad and the ohmic contact. Other embodiments of the diode may substitute various insulating or semi-insulating materials for the silicon dioxide, various semi-conductors for the active layers of gallium arsenide, and other materials for the substrate, which may be insulating or semi-insulating.

Bishop, William L.↗
NASA NTRS1999

A Generalized Wall Function

The asymptotic solutions, described by Tennekes and Lumley (1972), for surface flows in a channel, pipe or boundary layer at large Reynolds numbers are revisited. These solutions can be extended to more complex flows such as the flows with various pressure gradients, zero wall stress and rough surfaces, etc. In computational fluid dynamics (CFD), these solutions can be used as the boundary conditions to bridge the near-wall region of turbulent flows so that there is no need to have the fine grids near the wall unless the near-wall flow structures are required to resolve. These solutions are referred to as the wall functions. Furthermore, a generalized and unified law of the wall which is valid for whole surface layer (including viscous sublayer, buffer layer and inertial sublayer) is analytically constructed. The generalized law of the wall shows that the effect of both adverse and favorable pressure gradients on the surface flow is very significant. Such as unified wall function will be useful not only in deriving analytic expressions for surface flow properties but also bringing a great convenience for CFD methods to place accurate boundary conditions at any location away from the wall. The extended wall functions introduced in this paper can be used for complex flows with acceleration, deceleration, separation, recirculation and rough surfaces.

Shih, Tsan-Hsing↗
DOE OSTI2016

In-situ SiN{sub x}/InN structures for InN field-effect transistors

Critical aspects of InN channel field-effect transistors (FETs) have been investigated. SiN{sub x} dielectric layers were deposited in-situ, in the molecular beam epitaxy system, on the surface of 2 nm InN layers grown on GaN (0001) buffer layers. Metal-insulator-semiconductor Ni/SiN{sub x}/InN capacitors were analyzed by capacitance-voltage (C-V) and current-voltage measurements and were used as gates in InN FET transistors (MISFETs). Comparison of the experimental C-V results with self-consistent Schrödinger-Poisson calculations indicates the presence of a positive charge at the SiN{sub x}/InN interface of Q{sub if} ≈ 4.4 – 4.8 × 10{sup 13 }cm{sup −2}, assuming complete InN strain relaxation. Operation of InN MISFETs was demonstrated, but their performance was limited by a catastrophic breakdown at drain-source voltages above 2.5–3.0 V, the low electron mobility, and high series resistances of the structures.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2014

Controlled activation of ZnTe:Cu contacted CdTe solar cells using rapid thermal processing

Back contacts can significantly limit CdTe solar cell performance, reducing both open circuit voltage (Voc) and fill factor (FF). Copper is an essential component of effective back contacts, but its presence in the CdTe absorber creates detrimental recombination centers. Rapid thermal processing (RTP) is demonstrated as a highly effective approach for reducing back contact barriers in CdTe solar cells contacted with ZnTe:Cu buffer layers, substantially improving both FF (473%) and V oc (4850 mV). Current density and quantum efficiency remain essentially unchanged, but a five-fold increase in minority carrier lifetime is observed which is attributed to passivation of recombination sites in the back contact region. Quantitative analysis of secondary ion mass spectrometry shows that the majority of Cu segregates to the Au metallization layer and that the ZnTe buffer appears to inhibit the Cu diffusion into CdTe. 3D imaging of the back contact region using atom probe tomography shows that optimized devices are characterized by preferential segregation of copper to both the Au|ZnTe and CdTe|ZnTe interfaces, perhaps in the form of Cu x Te. Finally, with its low thermal budget the RTP process has been successfully applied to multiple device architectures.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Controlling Metastable Native Point-Defect Populations in Cu(In,Ga)Se 2 and Cu 2 ZnSnSe 4 Materials and Solar Cells through Voltage-Bias Annealing

Our contribution describes the influence of low-temperature annealing with and without applied voltage bias on thin-film Cu 2 ZnSnSe 4 (CZTSe), Cu(In,Ga)Se 2 (CIGS), and CdS material properties and solar cell performance. In order to quantify the effects of cation disorder on CZTSe device performance, completed devices were annealed under open-circuit conditions at various temperatures from 110 degrees C to 215 degrees C and subsequently quenched. Measurements on these devices document systematic, reversible changes in solar-cell performance consistent with a reduction in CZTSe band tails at lower annealing temperatures. CIGS and CZTSe solar cells were also annealed at various temperatures (200 degrees C for CIGS and 110 degrees C-215 degrees C for CZTSe) and subsequently quenched with continuously applied voltage bias to explore the effects of non-equilibrium annealing conditions. For both absorbers, large reversible changes in device characteristics correlated with the magnitude and sign of the applied voltage bias were observed. For CZTSe devices, the voltage-bias annealing (VBA) produced reversible changes in open-circuit voltage (VOC) from 289 meV to 446 meV. For CIGS solar cells, even larger changes were observed in device performance: photovoltaic (PV) conversion efficiency of the CIGS device varied from below 3% to above 15%, with corresponding changes in CIGS hole density of about three orders of magnitude. Findings from these VBA experiments are interpreted in terms of changes to the metastable point-defect populations that control key properties in the absorber layers, and in the CdS buffer layer. Computational device modeling was performed to assess the impacts of cation disorder on the CZTSe VOC deficit, and to elucidate the effects of VBA treatments on metastable point defect populations in CZTSe, CIGS, and CdS. Our results indicate that band tails impose important limitations on CZTSe device performance. Device modeling results also indicate that non-equilibrium processing conditions including the effects of voltage bias can dramatically alter point-defect-mediated opto-electronic properties of semiconductors. Implications for optimization of PV materials and connections to long-term stability of PV devices are discussed.

14 SOLAR ENERGY↗
DOE OSTI2017

Acceptance Test Data for BWXT Coated Particle Batch 93164A Defective IPyC Fraction and Pyrocarbon Anisotropy

Coated particle fuel batch J52O-16-93164 was produced by Babcock and Wilcox Technologies (BWXT) for possible selection as fuel for the Advanced Gas Reactor Fuel Development and Qualification (AGR) Program’s AGR-5/6/7 irradiation test in the Idaho National Laboratory (INL) Advanced Test Reactor (ATR), or may be used as demonstration production-scale coated particle fuel for other experiments. The tristructural-isotropic (TRISO) coatings were deposited in a 150-mm-diameter production-scale fluidizedbed chemical vapor deposition (CVD) furnace onto 425-μm-nominal-diameter spherical kernels from BWXT lot J52L-16-69316. Each kernel contained a mixture of 15.5%-enriched uranium carbide and uranium oxide (UCO) and was coated with four consecutive CVD layers: a ~50% dense carbon buffer layer with 100-μm-nominal thickness, a dense inner pyrolytic carbon (IPyC) layer with 40-μm-nominal thickness, a silicon carbide (SiC) layer with 35-μm-nominal thickness, and a dense outer pyrolytic carbon (OPyC) layer with 40-μm-nominal thickness. The TRISO-coated particle batch was sieved to upgrade the particles by removing over-sized and under-sized material, and the upgraded batch was designated by appending the letter A to the end of the batch number (i.e., 93164A).

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2017

Acceptance Test Data for Candidate AGR-5/6/7 TRISO Particle Batches BWXT Coater Batches 93165 93172 Defective IPyC Fraction and Pyrocarbon Anisotropy

Coated particle fuel batches J52O-16-93165, 93166, 93168, 93169, 93170, and 93172 were produced by Babcock and Wilcox Technologies (BWXT) for possible selection as fuel for the Advanced Gas Reactor Fuel Development and Qualification (AGR) Program’s AGR-5/6/7 irradiation test in the Idaho National Laboratory (INL) Advanced Test Reactor (ATR). Some of these batches may alternately be used as demonstration coated particle fuel for other experiments. Each batch was coated in a 150-mm-diameter production-scale fluidized-bed chemical vapor deposition (CVD) furnace. Tristructural isotropic (TRISO) coatings were deposited on 425-μm-nominal-diameter spherical kernels from BWXT lot J52R-16-69317 containing a mixture of 15.5%-enriched uranium carbide and uranium oxide (UCO). The TRISO coatings consisted of four consecutive CVD layers: a ~50% dense carbon buffer layer with 100-μm-nominal thickness, a dense inner pyrolytic carbon (IPyC) layer with 40-μm-nominal thickness, a silicon carbide (SiC) layer with 35-μm-nominal thickness, and a dense outer pyrolytic carbon (OPyC) layer with 40-μmnominal thickness. The TRISO-coated particle batches were sieved to upgrade the particles by removing over-sized and under-sized material, and the upgraded batches were designated by appending the letter A to the end of the batch number (e.g., 93165A).

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2018

Confirmatory LBL Analysis of AGR-5/6/7 Compacts and Over-Coated Particles BWXT Batches 11034, 14154C, 14156C, AND 14156D

Fuel for the Advanced Gas Reactor Fuel Development and Qualification (AGR) Program’s AGR-5/6/7 irradiation test in the Idaho National Laboratory (INL) Advanced Test Reactor (ATR) was produced by BWX Technologies (BWXT) Nuclear Operations Group in Lynchburg, Virginia. Tristructural isotropic (TRISO) coatings were deposited using a 150-mm-diameter production-scale fluidized-bed chemical vapor deposition (CVD) furnace on 425-μm-nominal-diameter spherical kernels from Lot J52R-16-69317 containing a mixture of 15.5% 235U low-enriched uranium carbide and uranium oxide (UCO). The TRISO coatings consisted of four consecutive CVD layers: a ~50% dense carbon buffer layer with 100-μmnominal thickness, a dense inner pyrolytic carbon (IPyC) layer with 40-μm-nominal thickness, a silicon carbide (SiC) layer with 35-μm-nominal thickness, and a dense outer pyrolytic carbon (OPyC) layer with 40-μm-nominal thickness. TRISO-coated particle Lot J52R-16-98005 was over-coated with a graphite/resin blend and these over-coated particles were pressed in half-inch-diameter, one-inch-long cylindrical compacts. Two packing fractions (PF) were produced, 40%PF and 25%PF, where the TRISO particle volume made up approximately 40% and 25% of the total compact volume, respectively. The AGR-5/6/7 Fuel Specification, SPC-1352 [Marshall 2016], provides the requirements necessary for acceptance of the fuel manufactured for the AGR-5/6/7 irradiation test. Quality control (QC) acceptance testing for all AGR-5/6/7 composited lots and single batches was performed by BWXT, with the exception of pyrolytic carbon (PyC) anisotropy and defective IPyC fraction in the TRISO candidate batches and final composite, which were measured at the Oak Ridge National Laboratory (ORNL) and reported in ORNL/TM-2017/036 [Hunn et al. 2017] and ORNL/TM-2017/037 [Helmreich et al. 2017a].

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2018

A study of fission product migration paths in irradiated TRISO particle SiC

Tristructural isotropic (TRISO) coated fuel particles used in high-temperature gas-cooled nuclear reactors (HTGRs) provide key advantages in terms of passive safety and reactor energy efficiencies. TRISO fuel consists of a number of special coating layers surrounding the fissile material in the kernel as shown in Fig. 1. The coating layers consist of a carbon buffer layer, inner pyrolytic carbon (PyC) layer, a silicon carbide (SiC) layer as well as an outer pyrolytic carbon layer. Together the layers act as a pressure vessel and barrier to the release of radioactive fission products into the reactor environment. The cubic 3C-SiC layer of thickness approximately 35 µm, acts as the primary barrier to the migration of metallic fission products out of the particle. The finding, more than three decades years ago, that silver can be released by intact TRISO particles has led to significant research to determine possible transport mechanisms of certain fission products in SiC. Out-of-reactor experiments did not reveal any significant lattice diffusion of silver in SiC1. Many earlier findings alternatively proposed a dominating role of fast diffusion paths such as grain boundaries and dislocations in enhancing fission product migration in SiC. Recently the role of the fission product palladium in enhancing the transport rate of silver in SiC2 was confirmed by transmission electron microscopy (TEM) of neutron-irradiated SiC from a TRISO coated particle from Compact 4-1-1, which was irradiated to an average burnup of 19.38% fissions per initial metal atom (FIMA); a time-averaged, volume-averaged temperature of 1072 °C; a time-averaged peak temperature of 1182 °C; and an average fast fluence of 4.13 x 1021 n/cm2 as part of the US Department of Energy's Advanced Gas Reactor (AGR)-1 experiment3. Although other studies found that Ag was found separately (without Pd) in TRISO coated particles irradiated at 11.4 %, 16.7 and 18.6% FIMA, Pd could have been present at lower than measureable concentrations4. In this study, SiC focussed ion beam (FIB) sections obtained from Compact 4-1-1 from the AGR-1 experiment were analysed in a double Cs-corrected JEOL ARM 200F using atomically resolved scanning transmission electron microscopy (STEM). By using atom resolved STEM in combination with electron energy loss spectroscopy (EELS) and large angle energy dispersive spectroscopy (EDS) a much better understanding of the migration routes and mechanisms of fission products in irradiated polycrystalline 3C-SiC was achieved.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2023

Conversion efficiency improvement of ELO GaAs solar cell, deposited on water soluble sacrificial buffer

Here, we demonstrate the improvement of power conversion efficiency of an epitaxially-lifted-off single junction GaAs solar cell deposited on a water-soluble sacrificial buffer architecture by introducing an additional germanium (Ge) interlayer between GaAs and the fluoride buffer. The epitaxial lift-off (ELO) technique has been extensively used to separate III-V device layers from their single crystal GaAs substrates. However, conventional ELO requires the use of concentrated hydrofluoric acid (HF) for extended times to etch out the sacrificial layer, subsequently degrading the surface roughness of the parent wafer. As a result, the wafer has to undergo expensive and intensive chemical mechanical polishing (CMP) processes, costing about 25% of a pristine 6-inch GaAs substrate. In our previous work, we demonstrated a method to eliminating the need for CMP post-processing by using water-assisted ELO (H 2 O-ELO). A water-soluble, 3-layer buffer architecture was developed using alkaline earth compounds. However, devices suffered low performance due to a high defect density in the GaAs active layers. A Ge interlayer was introduced to provide a more favorable surface energy for GaAs growth, which leads to an improvement of GaAs crystal quality. The Ge deposition conditions were optimized to achieve a high-quality Ge layer on triple-layer fluoride buffer. Single junction GaAs devices fabricated on Ge/(Ca,Sr)F 2 /BaF 2 /(Ca,Sr)F 2 showed improvement of solar cell performance parameters featuring increases in V oc by 23.7%, and fill factor (F.F.) by 4.9%, which results in an overall improvement of power conversion efficiency from 10.3% to 12.69%.

14 SOLAR ENERGY↗
DOE OSTI2014

Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistors

We have investigated effects of the vertical scaling on electrical properties in extremely thin-body InAs-on-insulator (-OI) metal-oxide-semiconductor field-effect transistors (MOSFETs). It is found that the body thickness (T{sub body}) scaling provides better short channel effect (SCE) control, whereas the T{sub body} scaling also causes the reduction of the mobility limited by channel thickness fluctuation (δT{sub body}) scattering (μ{sub fluctuation}). Also, in order to achieve better SCEs control, the thickness of InAs channel layer (T{sub channel}) scaling is more favorable than the thickness of MOS interface buffer layer (T{sub buffer}) scaling from a viewpoint of a balance between SCEs control and μ{sub fluctuation} reduction. These results indicate necessity of quantum well channel structure in InAs-OI MOSFETs and these should be considered in future transistor design.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
NASA NTRS1981

Organized motion in turbulent flow

A review of organized motion in turbulent flow indicates that the transport properties of most shear flows are dominated by large-scale vortex nonrandom motions. The mean velocity profile of a turbulent boundary layer consists of a viscous sublayer, buffer layer, and a logarithmic outer layer; an empirical formula of Coles (1956) applies to various pressure gradients. The boundary layer coherent structure was isolated by the correlation methods of Townsend (1956) and flow visualization by direct observations of complex unsteady turbulent motions. The near-wall studies of Willmart and Wooldridge (1962) used the space-time correlation for pressure fluctuations at the wall under a thick turbulent boundary layer; finally, organized motion in free shear flows and transition-control of mixing demonstrated that the Reynolds number invariance of turbulence shows wide scatter.

Cantwell, B. J.↗
NASA NTRS1989

Sequentially evaporated thin Y-Ba-Co-O superconducting films on microwave substrates

The development of high T sub c superconducting thin films on various microwave substrates is of major interest in space electronic systems. Thin films of YBa2Cu3O(7-Delta) were formed on SrTiO3, MgO, ZrO2 coated Al2O3, and LaAlO3 substrates by multi-layer sequential evaporation and subsequent annealing in oxygen. The technique allows controlled deposition of Cu, BaF2 and Y layers, as well as the ZrO buffer layers, to achieve reproducibility for microwave circuit fabrication. The three layer structure of Cu/BaF2/Y is repeated a minimum of four times. The films were annealed in an ambient of oxygen bubbled through water at temperatures between 850 C and 900 C followed by slow cooling (-2 C/minute) to 450 C, a low temperature anneal, and slow cooling to room temperature. Annealing times ranged from 15 minutes to 5 hrs. at high temperature and 0 to 6 hr. at 450 C. Silver contacts for four probe electrical measurements were formed by evaporation followed with an anneal at 500 C. The films were characterized by resistance-temperature measurements, energy dispersive X-ray spectroscopy, X-ray diffraction, and scanning electron microscopy. Critical transition temperatures ranged from 30 K to 87 K as a function of the substrate, composition of the film, thicknesses of the layers, and annealing conditions. Microwave ring resonator circuits were also patterned on these MgO and LaAlO3 substrates.

Valco, G. J.↗
DOE OSTI2013

Lattice matched semiconductor growth on crystalline metallic substrates

Methods of fabricating a semiconductor layer or device and said devices are disclosed. The methods include but are not limited to providing a metal or metal alloy substrate having a crystalline surface with a known lattice parameter (a). The methods further include growing a crystalline semiconductor alloy layer on the crystalline substrate surface by coincident site lattice matched epitaxy. The semiconductor layer may be grown without any buffer layer between the alloy and the crystalline surface of the substrate. The semiconductor alloy may be prepared to have a lattice parameter (a') that is related to the lattice parameter (a). The semiconductor alloy may further be prepared to have a selected band gap.

36 MATERIALS SCIENCE↗