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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

An AFM Dynamic Contact Model with Finite Thickness Correction to Study Micro-Rheology of Biological Cells

One of the major sources of error in Atomic Force Microscopy based Force Spectroscopic studies is bottom substrate effect, which comes due to assumption of infinite sample thickness. In the present work, anew experimentally validated mathematical correction for finite thickness of thesample is incorporated into a dynamic indentation model. This model is an extension of Sneddon’s static indentation contact model developed for conical tip indenters by incorporating the tip geometric effects, correction to hydrodynamic drag, viscoelastic nature of the sample and its finite thickness. The new model is applied to extract the viscoelastic properties of primary mesenchymal stem cells (MSC’s) extracted from human bone marrow and HCT-116 aggressive epithelial colorectal cancer cells. The micro-rheological studies indicated the presence of profound influence of infinite thickness assumption depending upon indentation depth and sample thickness at the point of indentation. The present model nullified this error and provided a better estimate of the rheological properties. The tests were conducted over a wide frequency bandwidth (0.5 to 126 Hz) and frequency dependent material properties were analyzed using power law structural damping model. It was found that MSC’s are stiffer and less viscous in nature compared to cancer cells.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2019

Capacitance of coarse-grained carbon electrodes with thickness up to 800 μm

We report that increasing the mass loading of active material in a supercapacitor electrode improves the energy storage capability per electrode area. However, the increase of mass loading is accompanied by the increased electrode thickness, which often causes drops in specific capacitance and counteracts the potential increase in areal capacitance once the electrode thickness exceeds 100 μm. In our previous work, we showed high specific capacitance retention of coarse-grained carbide derived carbon (CDC) with electrode thicknesses up to 1000 μm in organic electrolytes. In this work, we report that this behavior can be extended to coarse-grained activated carbon (AC). AC is the most common commercial supercapacitor electrode material with a much broader pore size distribution and lower electric conductivity compared to CDC. The areal capacitance of the AC electrode is enhanced from 2.3 F/cm 2 to 7.4 F/cm 2 at 5 mV/s, as the electrode thickness increases from 200 to 800 μm. With the increased mass loading of the active electrode material, the mass and volume occupied by current collectors and separators are reduced in the electrode stack, which leads to an increase of the gravimetric and volumetric energy density of the device. Finally, by reporting on this advantageous behavior in thick electrodes using coarse-grained carbons, we hope to garner interest toward an unexplored method for improving the performance of porous carbon-based supercapacitors, without increasing the cost or changing the current used supercapacitor manufacturing process.

36 MATERIALS SCIENCE↗
DOE OSTI2018

Tailoring the interfacial microstructure and mechanical strength of SiC ceramic joints using joining temperature and interlayer thickness

Highlights: • Bonding temperature could be decreased from 1600 °C to 1300 °C by inserting the Ti foil between SiC and Ta-5W. • The initial thickness interlayer and the number of interlayer had a significant influence on interface bonding. • Layered reaction layers consisting of carbides and silicide formed at the SiC/Ti/Ta-5W interfaces. • The joint strength depended mainly on the reaction layer thickness, especially the thickness of silicide layer. - Abstract: Silicon carbide ceramic joints solid state diffusion bonded by spark plasma sintering with Ti/Ta-5W/Ti multi-interlayer in the temperature range from 1250 °C to 1500 °C were investigated in detail in terms of interfacial microstructure, elemental diffusion, phase constituents, shear strength, and fracture morphology. Layered reaction layers consisting of carbides (TiC, Ti{sub 3}SiC{sub 2}, (Ta,Ti,W)C), silicide ((Ta,Ti,W){sub 5}Si{sub 3}) and Ta-rich solid solution (Ta,Ti,W) formed at the SiC/Ti/Ta-5W interfaces. It was found that joining temperature could be decreased from 1600 °C to 1300 °C by inserting the Ti foil between SiC and Ta-5W. Nevertheless, an attempt to further decrease the joining temperature to 1250 °C failed even using a thin Ti foil. The initial thickness interlayer and the number of interlayer had an influence on the interfacial diffusion bonding at SiC/Ti interface. Higher joining temperature was needed to achieve a tough interface joining for a thick interlayer compared with a thin interlayer. The increase of interlayer number also required higher joining temperature. The shear strength reached 123.5 ± 25.3 MPa for the joint diffusion bonded at 1300 °C.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Core–shell Ag@SiO{sub 2} nanoparticles of different silica shell thicknesses: Preparation and their effects on photoluminescence of lanthanide complexes

Highlights: • Ag@SiO{sub 2} nanoparticles of different silica shell thicknesses were prepared via the Stöber process. • Sm and Dy complexes with benzoate, 1,10-phenanthroline and 2,2′-bipyridine were synthesized. • The complex-doped Ag@SiO{sub 2} composites show stronger luminescent intensities than pure complexes. • The luminescent intensities of the composites strongly depend on the SiO{sub 2} shell thickness. - Abstract: Three kinds of almost spherical core–shell Ag@SiO{sub 2} nanoparticles of different silica shell thicknesses (10, 25 and 80 nm) were prepared via the Stöber process. The Ag core nanoparticles were prepared by reducing silver nitrate with sodium citrate. The size, morphology and structure of core–shell Ag@SiO{sub 2} nanoparticles were characterized by transmission electron microscopy. Subsequently, eight kinds of lanthanide complexes with benzoate, 1,10-phenanthroline and 2,2′-bipyridine were synthesized. The composition of the lanthanide complexes was characterized by elemental analysis, IR and UV spectra. Finally, lanthanide complexes were attached to the surface of Ag@SiO{sub 2} nanoparticles to form lanthanide-complex-doped Ag@SiO{sub 2} nanocomposites. The results show that the complex-doped Ag@SiO{sub 2} nanocomposites display much stronger luminescence intensities than the lanthanide complexes. Furthermore, the luminescence intensities of the lanthanide-complex-doped Ag@SiO{sub 2} nanocomposites with SiO{sub 2} shell thickness of 25 nm are stronger than those of the nanocomposites with SiO{sub 2} shell thickness of 10 and 80 nm.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2016

Thickness-dependent dispersion parameters, energy gap and nonlinear refractive index of ZnSe thin films

Highlights: • Combined experimental and theoretical researches on ZnSe Thin Films. • The film thickness and refractive index were determined using envelope method. • The absorption coefficient and the energy gap were calculated. • Dispersion parameters were determined using Wemple-DiDomenico relation. • The third order susceptibility and nonlinear refractive index were calculated. - Abstract: Zinc selenide (ZnSe) thin films with different thicknesses were evaporated onto glass substrates using the thermal evaporation technique. X-ray diffraction analysis confirmed that both the film and powder have cubic zinc-blende structure. The fundamental optical parameters like absorption coefficient, extinction coefficient and band gap were evaluated in transparent region of transmittance and reflectance spectrum. The optical transition of the films was found to be allowed, where the energy gap increased from 2.576 to 2.702 eV with increasing film thickness. Also, the refractive index value increase with increasing film thickness. The refractive indices evaluated through envelope method were extrapolated by Cauchy dispersion relationship over the whole spectra range. Additionally, the dispersion of refractive index was determined in terms of Wemple-DiDomenico single oscillator model. Third order susceptibility and nonlinear refractive index were determined for different thickness of ZnSe thin films.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Deposition of very thick Mo/Al multilayer films using magnetron sputtering

To understand materials at extreme conditions dynamic ramp compression techniques/experiments are critical, and gradient density impactors (GDIs) have the potential to enable high quality experiments. Very thick (i.e., hundreds of μm thick) multilayer films consisting of high z/low z layers with a gradient in z through the stack can serve as a GDI. Surprisingly while there is a large amount of literature on the topic of multilayer films, there is an absence of literature on very thick multilayer films. A number of multilayer film systems deposited by dc magnetron sputtering were evaluated as potential candidates, including Cu/Al, Ta/Al, and Mo/Al. The Mo/Al multilayer system was observed to be the most promising candidate and is the primary focus of this paper. Mo/Al multilayer films up to ∼400 μm thick with reasonable thickness uniformity were deposited.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Studies of x-ray localization and thickness dependence in atomic-scale elemental mapping by STEM energy-dispersive x-ray spectroscopy using single-frame scanning method

The delocalization of x-ray signals limits the spatial resolution in atomic-scale elemental mapping by scanning transmission electron microscopy (STEM) using energy-dispersive x-ray spectroscopy (EDS). In this study, using a SrTiO 3 [001] single crystal, we show that the x-ray localization to atomic columns is strongly dependent on crystal thickness, and a thin crystal is critical for improving the spatial resolution in atomic-scale EDS mapping. A single-frame scanning technique is used in this study instead of the multiple-frame technique to avoid peak broadening due to tracking error. The strong thickness dependence is realized by measuring the full width at half maxima (FWHM) as well as the peak-to-valley (P/V) ratio of the EDS profiles for Ti K and Sr K+L, obtained at several crystal thicknesses. A FWHM of about 0.16 nm and a P/V ratio of greater than 7.0 are obtained for Ti K for a crystal thickness of less than 20 nm. In conclusion, with increasing crystal thickness, the FWHM and P/V ratio increases and decreases, respectively, indicating the advantage of using a thin crystal for high-resolution EDS mapping.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Critical thickness and strain relaxation in molecular beam epitaxy-grown SrTiO{sub 3} films

We report on the study of the critical thickness and the strain relaxation in epitaxial SrTiO{sub 3} film grown on (La{sub 0.3}Sr{sub 0.7})(Al{sub 0.65}Ta{sub 0.35})O{sub 3} (001) (LSAT) substrate using the hybrid molecular beam epitaxy approach. No change in the film's lattice parameter (both the in-plane and the out-of-plane) was observed up to a film thickness of 180 nm, which is in sharp contrast to the theoretical critical thickness of ∼12 nm calculated using the equilibrium theory of strain relaxation. For film thicknesses greater than 180 nm, the out-of-plane lattice parameter was found to decrease hyperbolically in an excellent agreement with the relaxation via forming misfit dislocations. Possible mechanisms are discussed by which the elastic strain energy can be accommodated prior to forming misfit dislocations leading to such anomalously large critical thickness.

36 MATERIALS SCIENCE↗
DOE OSTI2013

Thickness dependent functional properties of PbZr{sub 0.52}Ti{sub 0.48}O{sub 3}/La{sub 0.67}Sr{sub 0.33}MnO{sub 3} heterostructures

The ultra thin ferroelectric PbZr{sub 0.52}Ti{sub 0.48}O{sub 3} (PZT) films with various thicknesses ranging from 100 (P100) to 10 (P10) nm were grown on La{sub 0.67}Sr{sub 0.33}MnO{sub 3}/(LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (LSMO/LSAT) (001) substrates deposited by pulsed laser deposition technique. The x-ray diffraction patterns of the heterostructures show only (00l) (l = 1 and/or 2) reflections corresponding to the LSAT substrate, PZT, and LSMO layers. The atomic force microscopy studies show that the root mean square surface roughnesses of P100 and P10 films are 2.39 and 0.99 nm, respectively. An increase of both real (ε′) and imaginary (ε″) permittivities was observed when thickness of PZT increases from 10 nm to 100 nm. Temperature dependent ε′ presents an anomaly, related to ferromagnetic-metal to paramagnetic-insulator transition of the LSMO, in the range of 350–500 K. The dielectric anomalies and magnetic phase transition temperature shifted to the lower temperature values with decrease in the PZT films thicknesses. The values of the remanent polarization (P{sub r}) and coercive field (E{sub c}) of the heterostructures were in the range of 24–42 μC/cm{sup 2}–170–1300 kV/cm. An appreciable increase of saturated magnetization (M{sub s}) was observed with increase of PZT layer thickness. The average M{sub s} values of PZT/LSMO heterostructure were 170, 150, 100, and 45 emu/cm{sup 3} for 100, 50, 25, and 10 nm at 300 K, respectively. Enhancement in magnetization with increase in PZT thickness may be due to the interface effect between PZT/LSMO layers.

36 MATERIALS SCIENCE↗
DOE OSTI2014

Influence of the interface on the magnetic properties of ferromagnetic ultrathin films with various adjacent copper thicknesses

The interface and magnetic properties of two series of films with Ta(5 nm)/Fe{sub 20}Ni{sub 80}Nd{sub 0.017}(3 nm)/Cu(t nm) and Ta(5 nm)/Cu(t nm)/Fe{sub 50}Co{sub 50}Gd{sub 0.07}(3 nm)/Cu(2 nm) structures have been investigated by atomic force microscopy, vibrating sample magnetometer, and ferromagnetic resonance (FMR). The roughness of all films increases with increasing copper thickness, which causes the different grain sizes in the surface of films. The coercivity of FeCo-Gd films increases with increasing thickness of inserted Cu layer while decreases with increasing thickness of Cu capping layer for FeNi-Nd films. FMR linewidth exhibits huge dependence on the thickness of inserted Cu layer for FeCo-Gd films, increasing from 2270 to 3680 Oe, which comes from the additional contribution of effect of the two-magnon scattering. And the thickness of Cu capping layer shows also an influence on FMR linewidth of FeNi-Nd films, increasing from 190 to 320 Oe, which mainly comes from intrinsic FMR linewidth and plus minor inhomogeneous broadening. All of these extrinsic linewidth broadening are related to the interface roughness.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Thickness dependent metal-insulator transition and dimensional crossover for weak localization in Si{sub 0.02}Zn{sub 0.98}O thin films grown by pulsed laser deposition

Metal to insulator transition was observed in Si{sub 0.02}Zn{sub 0.98}O (SZO) films, grown by pulsed laser deposition on sapphire substrates, as the thicknesses of the films were reduced from ∼40 to 15 nm. The SZO film with thickness of ∼40 nm showed typical metallic behavior in temperature dependent resistivity measurements. On the contrary, the SZO film with thickness of ∼15 nm was found to exhibit strong localization where the transport at low temperature was dominated by variable range hopping conduction. In the intermediate thickness regime, quantum corrections were important and a dimensional crossover from 3D to 2D weak localization occurred in the SZO film with thickness of 20 nm.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Dependency of anti-ferro-magnetic coupling strength on Ru spacer thickness of [Co/Pd]{sub n}-synthetic-anti-ferro-magnetic layer in perpendicular magnetic-tunnel-junctions fabricated on 12-inch TiN electrode wafer

We investigated the Ru spacer-thickness effect on the anti-ferro-magnetic coupling strength (J{sub ex}) of a [Co/Pd]{sub n}-synthetic-anti-ferro-magnetic layer fabricated with Co{sub 2}Fe{sub 6}B{sub 2}/MgO based perpendicular-magnetic-tunneling-junction spin-valves on 12-in. TiN electrode wafers. J{sub ex} peaked at a certain Ru spacer-thickness: specifically, a J{sub ex} of 0.78 erg/cm{sup 2} at 0.6 nm, satisfying the J{sub ex} criteria for realizing the mass production of terra-bit-level perpendicular-spin-transfer-torque magnetic-random-access-memory. Otherwise, J{sub ex} rapidly degraded when the Ru spacer-thickness was less than or higher than 0.6 nm. As a result, the allowable Ru thickness variation should be controlled less than 0.12 nm to satisfy the J{sub ex} criteria. However, the Ru spacer-thickness did not influence the tunneling-magneto-resistance (TMR) and resistance-area (RA) of the perpendicular-magnetic-tunneling-junction (p-MTJ) spin-valves since the Ru spacer in the synthetic-anti-ferro-magnetic layer mainly affects the anti-ferro-magnetic coupling efficiency rather than the crystalline linearity of the Co{sub 2}Fe{sub 6}B{sub 2} free layer/MgO tunneling barrier/Co{sub 2}Fe{sub 6}B{sub 2} pinned layer, although Co{sub 2}Fe{sub 6}B{sub 2}/MgO based p-MTJ spin-valves ex-situ annealed at 275 °C achieved a TMR of ∼70% at a RA of ∼20 Ω μm{sup 2}.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Electric field control of spin re-orientation in perpendicular magnetic tunnel junctions—CoFeB and MgO thickness dependence

We report an investigation of electric-field (EF) control of spin re-orientation as functions of the thicknesses of CoFeB free layer (FL) and MgO layer in synthetic-antiferromagnetic pinned magnetic tunnel junctions with perpendicular magnetic anisotropy. It is found that the EF modulates the coercivity (Hc) of the FL almost linearly for all FL thicknesses, while the EF efficiency, i.e., the slope of the linearity, increases as the FL thickness increases. This linear variation in Hc is also observed for larger MgO thicknesses (≥1.5 nm), while the EF efficiency increases only slightly from 370 to 410 Oe nm/V when MgO thickness increases from 1.5 to 1.76 nm. We have further observed the absence of quasi-DC unipolar switching. We discuss its origin and highlight the underlying challenges to implement the EF controlled switching in a practical magnetic memory.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2014

Electrocaloric properties of ferroelectric-paraelectric superlattices controlled by the thickness of paraelectric layer in a wide temperature range

As functions of the paraelectric layer thickness, misfit strain and temperature, the electrocaloric properties of ferroelectric-paraelectric superlattices are investigated using a time-dependent Ginzburg-Landau thermodynamic model. Ferroelectric phase transition driven by the relative thickness of the superlattice is found to dramatically impact the electrocaloric response. Near the phase transition temperature, the magnitude of the electrocaloric effect is maximized and shifted to lower temperatures by increasing the relative thickness of paraelectric layer. Theoretical calculations also imply that the electrocaloric effect of the superlattices depends not only on the relative thickness of paraelectric layer but also on misfit strain. Furthermore, control of the relative thickness of paraelectric layer and the misfit strain can change availably both the magnitude and the temperature sensitivity of the electrocaloric effect, which suggests that ferroelectric-paraelectric superlattices may be promising candidates for use in cooling devices in a wide temperature range.

36 MATERIALS SCIENCE↗
DOE OSTI2014

General analytical approach for sound transmission loss analysis through a thick metamaterial plate

We report theoretically and numerically on the sound transmission loss performance through a thick plate-type acoustic metamaterial made of spring-mass resonators attached to the surface of a homogeneous elastic plate. Two general analytical approaches based on plane wave expansion were developed to calculate both the sound transmission loss through the metamaterial plate (thick and thin) and its band structure. The first one can be applied to thick plate systems to study the sound transmission for any normal or oblique incident sound pressure. The second approach gives the metamaterial dispersion behavior to describe the vibrational motions of the plate, which helps to understand the physics behind sound radiation through air by the structure. Computed results show that high sound transmission loss up to 72 dB at 2 kHz is reached with a thick metamaterial plate while only 23 dB can be obtained for a simple homogeneous plate with the same thickness. Such plate-type acoustic metamaterial can be a very effective solution for high performance sound insulation and structural vibration shielding in the very low-frequency range.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2015

Thickness effect on magnetocrystalline anisotropy of Co/Pd(111) films: A density functional study

In this study, we carried out first-principles calculations on magnetocrystalline anisotropy (MCA) of Co/Pd thin films by adopting two different systems of (i) n-Co/3-Pd and (ii) n-Pd/3-Co. In one system, we vary the thickness of Co layer, fixing the thickness of the Pd layer to 3-monolayers, and in the other system vice versa. MCA is mainly governed by the surface and interface Co atoms, while contributions from other Co atoms are smaller. MCA energy (E{sub MCA}) of the Co/Pd thin film shows oscillatory behavior with the thickness of the Co layer, but is insensitive to the thickness of the Pd layer. In particular, the n-Co/3-Pd films of n = 2, 4, and 6 exhibit strong perpendicular MCA of about 1 meV. Our results suggest that controlling the thickness of the Co layer in Co/Pd (111) is crucial in achieving strong perpendicular MCA.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Thickness- and temperature-dependent magnetodynamic properties of yttrium iron garnet thin films

The magnetodynamical properties of nanometer-thick yttrium iron garnet films are studied using ferromagnetic resonance as a function of temperature. The films were grown on gadolinium gallium garnet substrates by pulsed laser deposition. First, we found that the damping coefficient increases as the temperature increases for different film thicknesses. Second, we found two different dependencies of the damping on film thickness: at room temperature, the damping coefficient increases as the film thickness decreases, while at T = 8 K, we find the damping to depend only weakly on the thickness. We attribute this behavior to an enhancement of the relaxation of the magnetization by impurities or defects at the surfaces.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Thickness-dependent blue shift in the excitonic peak of conformally grown ZnO:Al on ion-beam fabricated self-organized Si ripples

Al-doped ZnO (AZO) thin films of thicknesses 5,10, 15, 20, and 30 nm were deposited on 500 eV argon ion-beam fabricated nanoscale self-organized rippled-Si substrates at room temperature and are compared with similar films deposited on pristine-Si substrates (without ripples). It is observed that morphology of self-organized AZO films is driven by the underlying substrate morphology. For instance, for pristine-Si substrates, a granular morphology evolves for all AZO films. On the other hand, for rippled-Si substrates, morphologies having chain-like arrangement (anisotropic in nature) are observed up to a thickness of 20 nm, while a granular morphology evolves (isotropic in nature) for 30 nm-thick film. Photoluminescence studies reveal that excitonic peaks corresponding to 5–15 nm-thick AZO films, grown on rippled-Si templates, show a blue shift of 8 nm and 3 nm, respectively, whereas the peak shift is negligible for 20-nm thick film (with respect to their pristine counter parts). The observed blue shifts are substantiated by diffuse reflectance study and attributed to quantum confinement effect, associated with the size of the AZO grains and their spatial arrangements driven by the anisotropic morphology of underlying rippled-Si templates. The present findings will be useful for making tunable AZO-based light-emitting devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗