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NASA NTRS2017

An Introduction to Atomic Layer Deposition

Atomic Layer Deposition has been instrumental in providing a deposition method for multiple space flight applications. It is well known that ALD is a cost effective nanoadditive-manufacturing technique that allows for the conformal coating of substrates with atomic control in a benign temperature and pressure environment. Through the introduction of paired precursor gases, thin films can be deposited on a myriad of substrates from flat surfaces to those with significant topography. By providing atomic layer control, where single layers of atoms can be deposited, the fabrication of metal transparent films, precise nano-laminates, and coatings of nano-channels, pores and particles is achievable. The feasibility of this technology for NASA line of business applications range from thermal systems, optics, sensors, to environmental protection. An overview of this technology will be presented.

ALD↗

DOE OSTI2025

A Simple Route for Open Fluidic Devices with Particle Walls

Open fluidics, allowing liquid in a flow channel to interact with the external environment, is a revolutionary concept. However, fabricating a highly stable open fluidic device of arbitrary complexity, while maintaining reconfigurability, is still a challenge. This is achieved by the use of a patterned substrate and liquids that are covered with functional, readily available hydrophobic particles, providing great flexibility in the construction and use of open fluidic structures. Decorated with a coating of modified carbon nanotubes (CNTs) to encapsulate the fluids, the study capitalizes on the photothermal characteristics of CNTs to fabricate a device to probe the effects of temperature on tumor chemotherapy. The strategy substantially increases the availability and potential use of open fluidic devices.

Liu, Heng↗

NASA NTRS2002

Sputtering Erosion Measurement on Boron Nitride as a Hall Thruster Material

The durability of a high-powered Hall thruster may be limited by the sputter erosion resistance of its components. During normal operation, a small fraction of the accelerated ions will impact the interior of the main discharge channel, causing its gradual erosion. A laboratory experiment was conducted to simulate the sputter erosion of a Hall thruster. Tests of sputter etch rate were carried out using 300 to 1000 eV Xenon ions impinging on boron nitride substrates with angles of attack ranging from 30 to 75 degrees from horizontal. The erosion rates varied from 3.41 to 14.37 Angstroms/[sec(mA/sq cm)] and were found to depend on the ion energy and angle of attack, which is consistent with the behavior of other materials.

Britton, Melissa↗

NASA NTRS1983

Method of making low leakage N-channel SOS transistors utilizing positive photoresist masking techniques

A self-aligned method of implanting the edges of NMOS/SOS transistors is described. The method entails covering the silicon islands with a thick oxide layer, applying a protective photoresist layer over the thick oxide layer, and exposing the photoresist layer from the underside of the sapphire substrate thereby using the island as an exposure mask. Only the photoresist on the islands' edges will be exposed. The exposed photoresist is then removed and the thick oxide is removed from the islands edges which are then implanted.

Policastro, Steven G.↗

NASA NTRS2010

The QWIP Focal Plane Assembly for NASA's Landsat Data Continuity Mission

The Thermal Infrared Sensor (TIRS) is a QWIP based instrument intended to supplement the Operational Land Imager (OLI) for the Landsat Data Continuity Mission (LDCM). The TIRS instrument is a dual channel far infrared imager with the two bands centered at 10.8[mu]m and 12.0[mu]m. The focal plane assembly (FPA) consists of three 640x512 GaAs Quantum Well Infrared Photodetector (QWIP) arrays precisely mounted to a silicon carrier substrate that is mounted on an invar baseplate. The two spectral bands are defined by bandpass filters mounted in close proximity to the detector surfaces. The focal plane operating temperature is 43K. The QWIP arrays are hybridized to Indigo ISC9803 readout integrated circuits (ROICs). Two varieties of QWIP detector arrays are being developed for this project, a corrugated surface structure QWIP and a grating surface structure QWIP. This paper will describe the TIRS system noise equivalent temperature difference sensitivity as it affects the QWIP focal plane performance requirements: spectral response, dark current, conversion efficiency, read noise, temperature stability, pixel uniformity, optical crosstalk and pixel yield. Additional mechanical constraints as well as qualification through Technology Readiness Level 6 (TRL 6) will also be discussed.

Jhabvala, M↗

NASA NTRS1990

Osteoclast cytosolic calcium, regulated by voltage-gated calcium channels and extracellular calcium, controls podosome assembly and bone resorption

The mechanisms of Ca2+ entry and their effects on cell function were investigated in cultured chicken osteoclasts and putative osteoclasts produced by fusion of mononuclear cell precursors. Voltage-gated Ca2+ channels (VGCC) were detected by the effects of membrane depolarization with K+, BAY K 8644, and dihydropyridine antagonists. K+ produced dose-dependent increases of cytosolic calcium ([Ca2+]i) in osteoclasts on glass coverslips. Half-maximal effects were achieved at 70 mM K+. The effects of K+ were completely inhibited by dihydropyridine derivative Ca2+ channel blocking agents. BAY K 8644 (5 X 10(-6) M), a VGCC agonist, stimulated Ca2+ entry which was inhibited by nicardipine. VGCCs were inactivated by the attachment of osteoclasts to bone, indicating a rapid phenotypic change in Ca2+ entry mechanisms associated with adhesion of osteoclasts to their resorption substrate. Increasing extracellular Ca2+ ([Ca2+]e) induced Ca2+ release from intracellular stores and Ca2+ influx. The Ca2+ release was blocked by dantrolene (10(-5) M), and the influx by La3+. The effects of [Ca2+]e on [Ca2+]i suggests the presence of a Ca2+ receptor on the osteoclast cell membrane that could be coupled to mechanisms regulating cell function. Expression of the [Ca2+]e effect on [Ca2+]i was similar in the presence or absence of bone matrix substrate. Each of the mechanisms producing increases in [Ca2+]i, (membrane depolarization, BAY K 8644, and [Ca2+]e) reduced expression of the osteoclast-specific adhesion structure, the podosome. The decrease in podosome expression was mirrored by a 50% decrease in bone resorptive activity. Thus, stimulated increases of osteoclast [Ca2+]i lead to cytoskeletal changes affecting cell adhesion and decreasing bone resorptive activity.

NASA Discipline Musculoskeletal↗

DOE OSTI2022

Towards directed energy deposition of metals using polymer-based supports: porosity of 316L stainless steel deposited on carbon-fiber-reinforced ABS

Directed energy deposition (DED) is increasingly valuable to many industries because of its high deposition rates relative to other metal additive manufacturing processes, but the design space of DED is limited. For instance, steep overhangs are difficult or impossible to manufacture. Polymer-based support structures could help address this challenge. The viability of DED on polymer composite substrates has begun to be explored, specifically with 316L stainless steel on carbon-fiber-reinforced ABS substrates. Monolithic metal components can be deposited on the polymer, but it was found that gas release during polymer degradation causes porosity due to gas entrapment in the metal. An interlayer cooling time was introduced to reduce polymer degradation and decrease the porosity due to gas entrapment, but this led to porosity from lack of fusion. The results of this work provide insight into process parameter selection and scan strategy development to enable the use of polymer support structures in blown-powder DED.

Kurfess, Rebecca↗

DOE OSTI2025

Dielectric-Engineered Monolayer MoS 2 Memtransistors for Brain-Inspired Computing with High Recognition Accuracy

Two-dimensional transition metal dichalcogenides (2D-TMDs)-based memtransistors have emerged as promising candidates for neuromorphic hardware due to their exceptional ability to emulate synaptic behavior. However, many existing 2D-TMDs memtransistors rely on polycrystalline channels with grain boundaries or defects introduced through postgrowth treatments, raising concerns about material integrity and the preservation of intrinsic properties. Here, in this work, we demonstrate a monocrystalline monolayer MoS 2 memtransistor fabricated on a silicon nitride (SiN X ) substrate, achieving a large resistive switching ratio of 10 4 , a dynamic range exceeding 90, along with highly linear and symmetric weight updates, minimal cycle-to-cycle variability, and low device-to-device variability. These attributes are critical for enabling high-performance neuromorphic hardware. Based on experimental data, we further show that these artificial synapses enable a recognition accuracy of more than 97% on the MNIST handwritten digits data set. Our findings present a straightforward approach to realizing 2D-TMDs memtransistors through dielectric engineering, offering a promising platform for next-generation neuromorphic computing systems.

2D TMDs↗

DOE OSTI2022

Engineering Interlayer Electron–Phonon Coupling in WS 2 /BN Heterostructures

In van der Waals (vdW) heterostructures, the interlayer electron–phonon coupling (EPC) provides one unique channel to nonlocally engineer these elementary particles. However, limited by the stringent occurrence conditions, the efficient engineering of interlayer EPC remains elusive. Here we report a multitier engineering of interlayer EPC in WS2/boron nitride (BN) heterostructures, including isotope enrichments of BN substrates, temperature, and high-pressure tuning. The hyperfine isotope dependence of Raman intensities was unambiguously revealed. In combination with theoretical calculations, we anticipate that WS2/BN supercells could induce Brillouin-zone-folded phonons that contribute to the interlayer coupling, leading to a complex nature of broad Raman peaks. We further demonstrate the significance of a previously unexplored parameter, the interlayer spacing. By varying the temperature and high pressure, we effectively manipulated the strengths of EPC with on/off capabilities, indicating critical thresholds of the layer–layer spacing for activating and strengthening interlayer EPC. Our findings provide new opportunities to engineer vdW heterostructures with controlled interlayer coupling.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

NASA NTRS2015

Fabrication of Nanopipette Arrays for Biosensing

Method for providing a nanopipette array for biosensing applications. A thin substrate of anodizable metal ("AN-metal," such as Al, Mg, Zn, Ti, Ta and/or Nb) is anodized at temperature T=20-200.degree. C., chemical bath pH=4-6 and electrical potential 1-300 Volts, to produce an array of anodized nanopipette channels, having diameters 10-50 nm, with oxidized channel surfaces of thickness 5-20 nm. A portion of exposed non-oxidized AN-metal between adjacent nanopipette channels, of length 1-5 .mu.m, is etched away, exposing inner and outer surfaces of a nanopipette channel. A probe molecule, is deposited on one or both surfaces to provide biosensing capability for K(.gtoreq.1) target molecules. Target molecule presence, in an above-threshold concentration, in a fluid passed through or adjacent to a nanopipette channel, produces characteristic detection signals associated with the probe molecule site.

Meyyappan, Meyya↗

DOE OSTI2023

Polarization-induced 2D electron gases in N-polar AlGaN/AlN heterostructures on single-crystal AlN substrates

Polarization-induced carriers play an important role in achieving high electrical conductivity in ultrawide bandgap semiconductor AlGaN, which is essential for various applications ranging from radio frequency and power electronics to deep UV photonics. Despite significant scientific and technological interest, studies on polarization-induced carriers in N-polar AlGaN are rare. We report the observation and properties of polarization-induced two-dimensional electron gases (2DEGs) in N-polar AlGaN/AlN heterostructures on single-crystal AlN substrates by systematically varying the Al content in the 8 nm top layers from x = 0 to x = 0.6, spanning energy bandgaps from 3.56 to 4.77 eV. The 2DEG density drops monotonically with increasing Al content, from 3.8 × 1013/cm2 in the GaN channel, down to no measurable conductivity for x = 0.6. Alloy scattering limits the 2DEG mobility to below 50 cm2/V s for x = 0.49. These results provide valuable insights for designing N-polar AlGaN channel high electron mobility transistors on AlN for extreme electronics at high voltages and high temperatures, and for UV photonic devices.

Physics↗

DOE OSTI2024

Structural basis of transcription: RNA polymerase II substrate binding and metal coordination using a free-electron laser

Catalysis and translocation of multisubunit DNA-directed RNA polymerases underlie all cellular mRNA synthesis. RNA polymerase II (Pol II) synthesizes eukaryotic pre-mRNAs from a DNA template strand buried in its active site. Structural details of catalysis at near-atomic resolution and precise arrangement of key active site components have been elusive. Here, we present the free-electron laser (FEL) structures of a matched ATP-bound Pol II and the hyperactive Rpb1 T834P bridge helix (BH) mutant at the highest resolution to date. The radiation-damage-free FEL structures reveal the full active site interaction network, including the trigger loop (TL) in the closed conformation, bonafide occupancy of both site A and B Mg 2+ , and, more importantly, a putative third (site C) Mg 2+ analogous to that described for some DNA polymerases but not observed previously for cellular RNA polymerases. Molecular dynamics (MD) simulations of the structures indicate that the third Mg 2+ is coordinated and stabilized at its observed position. TL residues provide half of the substrate binding pocket while multiple TL/BH interactions induce conformational changes that could allow translocation upon substrate hydrolysis. Consistent with TL/BH communication, a FEL structure and MD simulations of the T834P mutant reveal rearrangement of some active site interactions supporting potential plasticity in active site function and long-distance effects on both the width of the central channel and TL conformation, likely underlying its increased elongation rate at the expense of fidelity.

Science & Technology - Other Topics↗

NASA NTRS1988

Characterization of GaAlAs optical waveguide heterostructures grown by molecular beam epitaxy

Multiple-layer GaAlAs optical waveguide heterostructures have been grown by MBE. These samples were designed to operate at 840 nm with negligible coupling of guided light to the absorbing GaAs substrate. The Al concentration was 13 percent for the guiding layer and was 16 percent for the cladding layers. The process for growing waveguide layers was calibrated primarily by high-energy electron diffraction, with the optical quality confirmed by photoluminescence measurements. Channel waveguide structures having widths of 5 microns were etched in a low-pressure magnetically confined multipolar plasma reactor. The resulting waveguide structures were characterized by Raman spectroscopy, ellipsometry, AES, and optical-waveguide loss measurements.

Radens, C. J.↗

NASA NTRS2006

The Zero-Degree Detector System

We will report on a detector system used for accelerator measurement of nuclear fragmentation cross sections. This system consists of two detector planes, each carrying a ring of 8 detectors. Each detector has 64 pads. These two detector planes are arranged facing each other so that the matching detector pads on each plane form a two element charged particle telescope. Each of these telescopes is capable of determining the elemental identity of nuclear fragments passing through it. The system is used to measure light fragment production in the presence of heavier fragments. We will present a detailed discussion of the 64-pad detector design, the substrate design. The front-end electronics used to read out the signals is based on a custom VLSI chip developed for the Advanced Thin Ionization Calorimeter experiment which has been flown successfully twice in Antarctica. Each of these chips has 16 channels and each channel consists of a charge-sensitive preamplifier followed by a shaping amplifier and a track-and-hold circuit. The track-and-hold circuits are connected via a multiplexer to an output line driver. This allows the held signals to be presented, one-by-one via a common data line to a analog-to-digital converter. Because the output line driver can be placed in a high input impedance state when not in use, it is possible to daisy-change many chips on the same common data line. The front-end electronics and data readout scheme will be discussed in detail. The Zero Degree Detector has been used in several accelerator experiments conducted at the NASA Space Radiation Laboratory and the Alternating Gradient Synchrotron at Brookhaven National Laboratory as well as at the HIMAC accelerator in Japan. We will show examples of data taken at these accelerator runs to demonstrate how the system works.

Adams, James H.↗

NASA NTRS2007

G4-FETs as Universal and Programmable Logic Gates

An analysis of a patented generic silicon- on-insulator (SOI) electronic device called a G4-FET has revealed that the device could be designed to function as a universal and programmable logic gate. The universality and programmability could be exploited to design logic circuits containing fewer discrete components than are required for conventional transistor-based circuits performing the same logic functions. A G4-FET is a combination of a junction field-effect transistor (JFET) and a metal oxide/semiconductor field-effect transistor (MOSFET) superimposed in a single silicon island and can therefore be regarded as two transistors sharing the same body. A G4-FET can also be regarded as a single transistor having four gates: two side junction-based gates, a top MOS gate, and a back gate activated by biasing of the SOI substrate. Each of these gates can be used to control the conduction characteristics of the transistor; this possibility creates new options for designing analog, radio-frequency, mixed-signal, and digital circuitry. With proper choice of the specific dimensions for the gates, channels, and ancillary features of the generic G4-FET, the device could be made to function as a three-input, one-output logic gate. As illustrated by the truth table in the top part of the figure, the behavior of this logic gate would be the inverse (the NOT) of that of a majority gate. In other words, the device would function as a NOT-majority gate. By simply adding an inverter, one could obtain a majority gate. In contrast, to construct a majority gate in conventional complementary metal oxide/semiconductor (CMOS) circuitry, one would need four three-input AND gates and a four-input OR gate, altogether containing 32 transistors.

Johnson, Travis↗

NASA NTRS2016

Spectral and Wavefront Error Performance of WFIRST-AFTA Bandpass Filter Coating Prototypes

The Cycle 5 design baseline for the Wide-Field Infrared Survey Telescope Astrophysics Focused Telescope Assets (WFIRST/AFTA) instrument includes a single wide-field channel (WFC) instrument for both imaging and slit-less spectroscopy. The only routinely moving part during scientific observations for this wide-field channel is the element wheel (EW) assembly. This filter-wheel assembly will have 8 positions that will be populated with 6 bandpass filters, a blank position, and a Grism that will consist of a three-element assembly to disperse the full field with an undeviated central wavelength for galaxy redshift surveys. All filter elements in the EW assembly will be made out of fused silica substrates (110 mm diameter) that will have the appropriate bandpass coatings according to the filter designations (Z087, Y106, J129, H158, F184, W149 and Grism). This paper presents and discusses the performance (including spectral transmission and reflected/transmitted wavefront error measurements) of a subset of bandpass filter coating prototypes that are based on the WFC instrument filter compliment. The bandpass coating prototypes that are tested in this effort correspond to the Z087, W149, and Grism filter elements. These filter coatings have been procured from three different vendors to assess the most challenging aspects in terms of the in-band throughput, out of band rejection (including the cut-on and cutoff slopes), and the impact the wavefront error distortions of these filter coatings will have on the imaging performance of the wide-field channel in the WFIRST/AFTA observatory.

cryogenic temperatures↗

NASA NTRS2016

Spectral and Wavefront Error Performance of WFIRST/AFTA Prototype Filters

The Cycle 5 design baseline for the Wide-Field Infrared Survey Telescope Astrophysics Focused Telescope Assets (WFIRSTAFTA) instrument includes a single wide-field channel (WFC) instrument for both imaging and slit-less spectroscopy. The only routinely moving part during scientific observations for this wide-field channel is the element wheel (EW) assembly. This filter-wheel assembly will have 8 positions that will be populated with 6 bandpass filters, a blank position, and a Grism that will consist of a three-element assembly to disperse the full field with an undeviated central wavelength for galaxy redshift surveys. All filter elements in the EW assembly will be made out of fused silica substrates (110 mm diameter) that will have the appropriate bandpass coatings according to the filter designations (Z087, Y106, J129, H158, F184, W149 and Grism). This paper presents and discusses the performance (including spectral transmission and reflectedtransmitted wavefront error measurements) of a subset of bandpass filter coating prototypes that are based on the WFC instrument filter compliment. The bandpass coating prototypes that are tested in this effort correspond to the Z087, W149, and Grism filter elements. These filter coatings have been procured from three different vendors to assess the most challenging aspects in terms of the in-band throughput, out of band rejection (including the cut-on and cutoff slopes), and the impact the wavefront error distortions of these filter coatings will have on the imaging performance of the de-field channel in the WFIRSTAFTA observatory.

cryogenic temperatures↗

DOE OSTI2022

Commensuration effects on skyrmion Hall angle and drag for manipulation of skyrmions on two-dimensional periodic substrates

Here, we examine the dynamics of an individually driven skyrmion moving through a background lattice of skyrmions coupled to a 2D periodic substrate as we vary the ratio of the number of skyrmions to the number of pinning sites across commensurate and incommensurate conditions. As the skyrmion density increases, the skyrmion Hall angle is nonmonotonic, dropping to low or zero values in commensurate states and rising to an enhanced value in incommensurate states. Under commensuration, the driven skyrmion is channeled by a symmetry direction of the pinning array and exhibits an increased velocity. At fillings for which the skyrmion Hall angle is zero, the velocity has a narrow band noise signature, while for incommensurate fillings, the skyrmion motion is disordered and the velocity noise is broad band. Under commensurate conditions, multi-step depinning transitions appear and the skyrmion Hall angle is zero at low drives but becomes finite at higher drives, while at incommensurate fillings there is only a single depinning transition. As the gyrotropic component of the skyrmion dynamics, called the Magnus force, increases, peaks in the velocity that appear in commensurate regimes cross over to dips, and new types of directional locking effects can arise in which the skyrmion travels along other symmetry directions of the background lattice. At large Magnus forces, and particularly at commensurate fillings, the driven skyrmion can experience a velocity boost in which the skyrmion moves faster than the applied drive due to the alignment of the Magnus-induced velocity with the driving direction. In some cases, an increase of the Magnus force can produce regimes of enhanced pinning when the skyrmion is forced to move along a nonsymmetry direction of the periodic pinning array. This is in contrast to systems with random pinning, where increasing the Magnus force generally reduces the pinning effect. We demonstrate these dynamics for both square and triangular substrates and map out the different regimes as a function of filling fraction, pinning force, and the strength of the Magnus force in a series of dynamic phase diagrams.

36 MATERIALS SCIENCE↗