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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Crystallization behavior of a melt-spun Fe-Ni based steel

Whether Fe-Ni-based alloys solidify with a bcc or fcc structure has been observed by many investigators to be a stronger function of kinetics and undercooling than strictly free-energy minimization. Such behavior has been observed in an Fe(52.8)Ni(28.7)Al(3.4)Ti(6.1)B(9.0) alloy. The alloy was cast as ribbons about 45 microns thick using a dual free-jet variation of chillbock melt spinning against a Cu wheel. Optical, X-ray, and electron analyses of the as-cast and annealed ribbons were performed. A microstructure of at least four layers containing combinations of ecc, bcc, and amorphous phases in differing proportions was observed in the as-cast ribbon. The midthickness layer had the most unusual features, containing fcc grains about 75 nm in size encompassing spherulitic regions as large as 15 microns comprised of fcc grains about 25 nm in size. The crystallization sequence responsible for the as-cast microstructure is discussed in terms of the competition between the formation of bcc and fcc phases as influenced by undercooling, recalescence, and variations in cooling rate experienced by the as-cast ribbon.

Michal, G. M.↗
NASA NTRS2001

Carbon Nanotubes Grown By CVD in Various Conditions

Since the superior properties of multi-wall carbon nanotubes (MWCNT) could be used in numerous devices such as electronics and sensors, many efforts have been engaged in synthesizing particular structural or dimensional MWCNT. This presentation will illustrate MWCNT synthesized on silicon substrates by thermal CVD. On the substrate, an array of catalysts is coated using sputtering deposition. A thin Ti buffer layer is also coated on some Si substrates prior to depositing catalyst particles. Nickel, cobalt or iron transition metals are used as catalysts for the MWCNT growth. Since the diameter of MWCNT depends on the size of catalyst particles, the catalyst particle size is investigated after annealed at various temperatures. MWCNT are grown on the substrate in the temperature range of 700 to 1000 C and the pressure range of 100 torr to one atmosphere. Methane and hydrogen gases with methane content of 10% to 100% are used for the MWCNT synthesis. Morphology, length and diameter of these MWCNT are determined by scanning electron microscopy and Raman spectroscopy. The detailed results of syntheses and characterizations will be discussed in the presentation.

Zhu, S.↗
NASA NTRS2001

Carbon Nanotubes Growth by CVD in Various Conditions

Since the superior properties of multi-wall carbon nanotubes (MWCNT could be used in numerous devices such as electronics and sensors, many efforts have been engaged in synthesizing particular structural or dimensional MWCNT. This presentation will illustrate MWCNT synthesized on silicon substrates by thermal CVD. On the substrate, an array of catalysts is coated using sputtering deposition. A thin Ti buffer layer is also coated on some Si substrates prior to depositing catalyst particles. Nickel, cobalt or iron transition metals are used as catalysts for the MWCNT growth. Since the diameter of MWCNT depends on the size of catalyst particles, the catalyst particle size is investigated after annealed at various temperatures. MWCNT are grown on the substrate in the temperature range of 700 to 1000 C and the pressure range of 100 torr to one atmosphere. Methane and hydrogen gases with methane content of 10% to 100% are used for the MWCNT synthesis. Morphology, length and diameter of these MWCNT are determined by scanning electron microscopy and Raman spectroscopy. The detailed results of syntheses and characterizations will be discussed in the presentation.

Zhu, S.↗
NASA NTRS1988

Development and demonstration of an on-board mission planner for helicopters

Mission management tasks can be distributed within a planning hierarchy, where each level of the hierarchy addresses a scope of action, and associated time scale or planning horizon, and requirements for plan generation response time. The current work is focused on the far-field planning subproblem, with a scope and planning horizon encompassing the entire mission and with a response time required to be about two minutes. The far-feld planning problem is posed as a constrained optimization problem and algorithms and structural organizations are proposed for the solution. Algorithms are implemented in a developmental environment, and performance is assessed with respect to optimality and feasibility for the intended application and in comparison with alternative algorithms. This is done for the three major components of far-field planning: goal planning, waypoint path planning, and timeline management. It appears feasible to meet performance requirements on a 10 Mips flyable processor (dedicated to far-field planning) using a heuristically-guided simulated annealing technique for the goal planner, a modified A* search for the waypoint path planner, and a speed scheduling technique developed for this project.

Deutsch, Owen L.↗
NASA NTRS1979

Structure of deformed silicon and implications for low-cost solar cells

The paper reports on an investigation of the microstructure and minority carrier lifetime of silicon in uniaxially compressed silicon samples, the objective of which was to determine if it is feasible to produce silicon solar cells from sheet formed by high temperature deformation. It is reported that recrystallization was found to be incomplete in both fine and large grained materials, and that the major mode of recrystallization appears to be migration of existing boundaries into the deformed regions. Also, minority carrier diffusion length was found to be drastically reduced after deformation, perhaps due to contamination or cooling rate, and recovered only slightly with annealing. It is concluded that these results suggest that high temperature deformation of silicon for direct production of sheet for high efficiency solar cells is not practical. It is noted that potential may exist for its use as a coarse grained substrate.

Mardesich, N.↗
NASA NTRS1985

Phase transformations in ion-irradiated silicides

The present investigation has three objectives. The first is concerned with the phase transformation of CoSi2 under ion implantation and the subsequent crystallization characteristics during annealing, taking into account epitaxial and nonepitaxial recrystallization behavior. The second objective is related to a study of the general trend of implantation-induced damage and crystallization behavior for a number of commonly used silicides. The last objective involves a comparison of the recrystallization behavior of cosputtered refractory silicides with that of the ion-implanted silicides. It was found that epitaxial regrowth of ion-irradiated CoSi2 occurred for samples with an epitaxial seed left at the Si/CoSi2 interface. A structural investigation of CoSi2 involving transmission electron microscopy (TEM) showed that after high-dose implantation CoSi2 is amorphous.

Hewett, C. A.↗
NASA NTRS1994

Status of Diffused Junction p(+)n InP Solar Cells for Space Applications

Recently, we have succeeded in fabricating diffused junction p(+)n(Cd,S) InP solar cells with measured AMO, 25 C open circuit voltage (V(sub OC)) of 887.6 mV, which, to the best of our knowledge, is higher than previously reported V(sub OC) values for any InP homojunction solar cells. The experiment-based projected achievable efficiency of these cells using LEC grown substrates is 21.3%. The maximum AMO, 25 C efficiency recorded to date on bare cells is, however, only 13.2%. This is because of large external and internal losses due to non-optimized front grid design, antireflection (AR) coating and emitter thickness. This paper summarizes recent advances in the technology of fabrication of p(+)n InP diffused structures and solar cells, resulted from a study undertaken in an effort to increase the cell efficiency. The topics discussed in this paper include advances in: 1) the formation of thin p(+) InP:Cd emitter layers, 2) electroplated front contacts, 3) surface passivation and 4) the design of a new native oxide/AI203/MgF2 three layer AR coating using a chemically-grown P-rich passivating oxide as a first layer. Based on the high radiation resistance and the excellent post-irradiation annealing and recovery demonstrated in the early tests done to date, as well as the projected high efficiency and low-cost high-volume fabricability, these cells show a very good potential for space photovoltaic applications.

Faur, Mircea↗
NASA NTRS1994

Status of diffused junction p+n InP solar cells for space applications

Recently, we have succeeded in fabricating diffused junction p(sup +)n(Cd,S) InP solar cells with measured AMO, 25 C open circuit voltage (V(sub OC)) of 887.6 mV, which, to the best of our knowledge, is higher than previously reported V(sub OC) values for any InP homojunction solar cells. The experiment-based projected achievable efficiency of these cells using LEC grown substrates is 21.3 percent. The maximum AMO, 25 C internal losses due to date on bare cells is, however, only 13.2 percent. This is because of large external and internal losses due to non-optimized front grid design, antireflection (AR) coating and emitter thickness. This paper summarizes recent advances in the technology of fabrication of p(sup +)n InP diffused structures and solar cells, resulted from a study undertaken in an effort to increase the cell efficiency. The topics discussed in this paper include advances in: (1) the formation on thin p(sup +) InP:Cd emitter layers, (2) electroplated front contacts, (3) surface passivation and (4) the design of a new native oxide/Al2O3/MgF2 tree layer AR coating using a chemically-grown P-rich passivating oxide as a first layer. Based on the high radiation resistance and the excellent post-irradiation annealing and recovery demonstrated in the early tests done to date, as well as the projected high efficiency and low-cost high-volume fabricability, these cells show a very good potential for space photovoltaic applications.

Faur, Mircea↗
NASA NTRS2006

Two-axis magnetic field sensor

A ferromagnetic thin-film based magnetic field sensor with first and second sensitive direction sensing structures each having a nonmagnetic intermediate layer with two major surfaces on opposite sides thereof having a magnetization reference layer on one and an anisotropic ferromagnetic material sensing layer on the other having a length in a selected length direction and a smaller width perpendicular thereto and parallel to the relatively fixed magnetization direction. The relatively fixed magnetization direction of said magnetization reference layer in each is oriented in substantially parallel to the substrate but substantially perpendicular to that of the other. An annealing process is used to form the desired magnetization directions.

Jander, Albrecht↗
NASA NTRS1992

Surface morphology of molecular-beam epitaxially grown Si(1-x)Ge(x) layers on (100) and (110) Si

The surface morphology and dislocation structure of Si(1-x)Ge(x) layers grown on (100) and (110) Si substrates have been investigated using atomic force microscopy, and scanning and transmission electron microscopy. The layers, which have up to a 1.2 percent lattice mismatch with the substrates, were grown by molecular-beam epitaxy at 550 C at thicknesses above those required for the introduction of dislocations. Si(1-x)Ge(x) layers grown on (100) show a crosshatch morphology which is correlated to the underlying misfit dislocation network. Annealing greatly enhances the surface roughness producing a partial islanding growing on the preexisting crosshatch morphology. On the (110) substrates no annealing is necessary to produce a roughened surface. The roughened surface morphology is analyzed as a strain-reducing growth mode which enables partial relaxation of the near-surface atomic planes.

Pike, W. T.↗
NASA NTRS1995

Method for fabricating semiconductor devices

A process for fabricating gold/gallium arsenide structures, in situ, on molecular beam epitaxially grown gallium arsenide. The resulting interface proves to be Ohmic, an unexpected result which is interpreted in terms of increased electrode interdiffusion. More importantly, the present invention surprisingly permits the fabrication of Ohmic contacts in a III-V semiconductor material at room temperature. Although it may be desireable to heat the Ohmic contact to a temperature of, for example, 200 degrees Centigrade if one wishes to further decrease the resistance of the contact, such low temperature annealing is much less likely to have any deleterious affect on the underlying substrate. The use of the term in situ herein, contemplates continuously maintaining an ultra-high vacuum, that is a vacuum which is at least 10.sup.-8 Torr, until after the metallization has been completed. An alternative embodiment of the present invention comprising an additional step, namely the termination of the gallium arsenide by a two monolayer thickness of epitaxial aluminum arsenide as a diffusion barrier, enables the recovery of Schottky barrier behavior, namely a rectified I-V characteristic. The present invention provides a significant breakthrough in the fabrication of III-V semiconductor devices wherein excellent Ohmic contact and Schottky barrier interfaces to such devices can be achieved simply and inexpensively and without requiring the high temperature processing of the prior art and also without requiring the use of exotic high temperature refractory materials as substitutes for those preferred contact metals such as gold, aluminum and the like.

Kaiser, William J.↗
NASA NTRS1985

Size and shape dependence of CO adsorption sites on sapphire supported Fe microcrystals

The surface structure and stoichiometry of alumina substrates, as well as the size, growth characteristics, and shape of Fe deposits on sapphire substrates have been investigated by low energy electron diffraction (LEED), Auger electron spectroscopy, electron energy loss spectroscopy, and X-ray photoemission spectroscopy (XPS), as well as work function measurements, in conjunction with transition electron microscopy observations. The substrates used in this work were the following: (1) new, clean Al2O3; (2) same surface amorphized by Ar ion bombardment; (3) same surface regenerated by 650 C annealing; (4) amorphous alumina films on Ta slab; and (5) polycrystal alumina films, obtained by heating amorphous films to 600 C. Substrate cleaning was found to be most effective in producing a reproducible surface upon oxygen RF plasma treatment. The Fe nucleation and growth process was found to depend strongly on the type of substrate surface and deposition conditions. Ar ion bombardment under beam flooding, and subsequent annealing at 650 C was found an effective means to restore the original Al2O3 (1102) surface for renewed Fe deposition.

Papageorgopoulos, C.↗
NASA NTRS1985

A review of rapid solidification studies of intermetallic compounds

A review of rapid solidification studies of high-temperature ordered intermetallic compounds is presented. Emphasis is on the nickel - and iron- aluminides which are of potential interest as structural materials. The nickel-base aluminides which have been rapidly solidified exhibit changes in grain size, compositional segregation, and degree of long range order (as reflected in APB size and distribution) which markedly affect mechanical properties. Some experiments indicate the formation of a metastable L1(2) phase in rapidly solidified Fe-(Ni,Mn)-Al-C alloys, while other work observes only a metastable fcc phase in the same composition range. The metastable phases and/or microstructures in both nickel and iron aluminides are destroyed by annealing at temperatures above 750 K, with subsequent degradation of mechanical properties. Rapid solidification studies of several other intermetallic compounds are briefly noted.

Koch, C. C.↗
NASA NTRS1959

Welded Titanium Case for Space-Probe Rocket Motor

Early in 1958, the Jet Propulsion Laboratory of the California Institute of Technology was requested to participate in a lunar-probe mission code-named Juno II which would place a 15-lb Instrumented payload (Pioneer IV) in the vicinity of the moon. The vehicle was to use the same high-speed upper-stage assembly as flown on the successful Jupiter-C configuration; however, the first-stage booster was to be a Jupiter rather than a Redstone. An analysis of the intended flight and payload configuration Indicated that the feasibility of accomplishing the mission was questionable and that additional performance would have to be obtained if the mission was to be feasible. Since the most efficient way of Increasing the performance of a staged vehicle is to increase the performance of the last stage, a study of possible ways of doing this was made.. Because of the time schedule placed on this effort It was decided to reduce the weight of the fourth-stage rocket-motor case by substituting the annealed 6Al--4V titanium alloy for the Type 410 stainless steel. Although this introduced an unfamiliar material, It reduced the changes in design and fabrication techniques. This particular titanium alloy was chosen on the basis of previous tests which proved the suitability of the alloy as a pressure-vessel material when used at an annealed yield strength of about 120, 000 psi. The titanium-case fourth stage of Juno U is shown with the payload and on the missile in Fig. 1; the stainless-steel motor cases used in the Jupiter-C vehicle are shown in Fig. 2. The fourth-stage motor case has a diameter of 6 in., a length of approximately 38 in. center dot and a nominal cylindrical wall thickness of 0.025 in. As shown in Fig. 1, the case serves as the structural support of the payload and is aligned to the upper stage assembly through an alignment ring. The nozzle is threaded into the end of the motor case, and is of the ceramic-coated steel design. Figure 3 shows a comparison of the components used to make the stainless steel and the 6A1--4V titanium alloy cases. The forward dome and aft fitting for the stainless steel assembly were fabricated from a combination of forged, spun and machined parts.. In order to facilitate the fabrication of the titanium alloy motor ) these components were machined from a large-diameter billet.

Brothers, A. J.↗
NASA NTRS1999

Experiments on Evolving Software Models of Analog Circuits

Analog circuits are of great importance in electronic system design since the world is fundamentally analog in nature. While the amount of digital design activity far outpaces that of analog design, most digital systems require analog modules for interfacing with the external world. It was recently estimated that approximately 60% of digital application- specific integrated circuit designs incorporated analog circuits. With challenging analog circuit design problems and few analog design engineers, there are economic reasons for automating the analog design process, especially time-to-market considerations. Techniques for analog circuit design automation began appearing about two decades ago. These methods incorporated heuristics [6], knowledge bases [1], simulated annealing [5], and other algorithms. Efforts using techniques from evolutionary computation began appearing over the last few years. These include the use of genetic algorithms to select electronic component values (for example, the resistance value of a resistor), to select circuit topologies, and to design amplifiers using a limited set of canned topologies [4]. A genetic programming-based analog circuit design system has been demonstrated in which the circuit sizes, component values, and the circuit topologies are determined automatically [3]. The genetic-algorithm systems typically represent circuit structures as vectors of parameters encoded in binary strings, while the genetic programming system manipulates tree data structures.

Lohn, Jason D.↗
NASA NTRS2000

p-n Junction Diodes Fabricated on Si-Si/Ge Heteroepitaxial Films

A set of photolithographic masks was designed for the fabrication of diodes in the Si-Si/Ge material system. Fabrication was performed on samples obtained from two different wafers: (1) a complete HBT structure with an n (Si emitter), p (Si/Ge base), and an n/n+ (Si collector/sub-collector) deposited epitaxially (MBE) on a high resistivity p-Si substrate, (2) an HBT structure where epitaxial growth was terminated after the p-type base (Si/Ge) layer deposition. Two different process runs were attempted for the fabrication of Si-Si/Ge (n-p) and Si/Ge-Si (p-n) junction diodes formed between the emitter-base and base-collector layers, respectively, of the Si-Si/Ge-Si HBT structure. One of the processes employed a plasma etching step to expose the p-layer in the structure (1) and to expose the e-layer in structure (2). The Contact metallization used for these diodes was a Cu-based metallization scheme that was developed during the first year of the grant. The plasma-etched base-collector diodes on structure (2) exhibited well-behaved diode-like characteristics. However, the plasma-etched emitter-base diodes demonstrated back-to-back diode characteristics. These back-to back characteristics were probably due to complete etching of the base-layer, yielding a p-n-p diode. The deep implantation process yielded rectifying diodes with asymmetric forward and reverse characteristics. The ideality factor of these diodes were between 1.6 -2.1, indicating that the quality of the MBE grown epitaxial films was not sufficiently high, and also incomplete annealing of the implantation damage. Further study will be conducted on CVD grown films, which are expected to have higher epitaxial quality.

Das, K.↗
NASA NTRS2005

Synthesis, Structure, and Transport Properties of YbSb2Te4 and YbSb4Te7 for Thermoelectric Applications

Very little work has been done in the Yb-Sb-Te system of compounds. Exploratory synthesis of various compounds in the system has been performed in the search for new thermoelectric materials. The compounds in the system were examined due to the fact that the system is known to act as a concentrated Kondo system, a heavy fermion. Heavy fermions are known to possess high densities of state which are useful in thermoelectric applications. TWO compounds in the system, YbSb2Te4 and YbSb4Te7, have been successfully synthesized in bulk by two methods: low temperature mechanical alloying and high temperature direct synthesis. The Hall mobility, Seebeck coefficient, electrical resistivity, and thermal conductivity were measured on both the unannealed and annealed compounds up to 550 C to determine the dimensionless thermoelectric figure of merit, ZT. The results indicate that both compounds make promising candidates for use in thermoelectric devices.

Guloy, Amado S.↗
NASA NTRS2000

High Energy Flywheel Containment Evaluation

A flywheel testing facility is being constructed at the NASA Glenn Research Center. This facility is to be used for life cycle testing of various flywheel rotors. The lifecycle testing consists of spinning a rotor from a low rpm (approx. 20,000 ) to a high rpm (approx. 60,000) and then back to the low rpm. This spin cycle will model that which the rotor will see during use. To simulate the lifetime of the rotor, the spin cycle will be performed tens of thousands of times. A typical life cycle spin test is expected to last six months. During this time the rotor will be spun through a cycle every five minutes. The test will run continuously for the six month period barring a flywheel failure. Since it is not reasonable to have the surrounding area evacuated of personnel for the duration of the testing, the flywheel facility has to be designed to withstand a flywheel rotor failure and insure that there is no danger to any personnel in the adjacent buildings or surrounding areas. In order to determine if the facility can safely contain a flywheel rotor failure an analysis of the facility in conjunction with possible flywheel failure modes was performed. This analysis is intended as a worst case evaluation of the burst liner and vacuum tank's ability to contain a failure. The test chamber consists of a cylindrical stainless steel vacuum tank, two outer steel containment rings, and a stainless steel burst liner. The stainless steel used is annealed 302, which has an ultimate strength of 620 MPa (90,000 psi). A diagram of the vacuum tank configuration is shown. The vacuum tank and air turbine will be located below ground in a pit. The tank is secured in the pit with 0.3 m (12 in.) of cement along the base and the remaining portion of the tank is surrounded by gravel up to the access ports. A 590 kg (1300 lb.) bulkhead is placed on top of the pit during operation and the complete facility is housed within a concrete structure which has 7.5 cm (3 in.) thick walls. A cutaway of the facility is shown.

Colozza, Anthony J.↗