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At least 289 records · Page 16

Diffusion lengths in irradiated N/P InP-on-Si solar cells

Indium phosphide (InP) solar cells are being made on silicon (Si) wafers (InP/Si) to take advantage of both the radiation-hardness properties of the InP solar cell and the light weight and low cost of Si wafers compared to InP or germanium (Ge) wafers. The InP/Si cell application is for long duration and/or high radiation orbit space missions. InP/Si cells have higher absolute efficiency after a high radiation dose than gallium arsenide (GaAs) or silicon (Si) solar cells. In this work, base electron diffusion lengths in the N/P cell are extracted from measured AM0 short-circuit photocurrent at various irradiation levels out to an equivalent 1 MeV fluence of 1017 1 MeV electrons/sq cm for a 1 sq cm 12% BOL InP/Si cell. These values are then checked for consistency by comparing measured Voc data with a theoretical Voc model that includes a dark current term that depends on the extracted diffusion lengths.

Wojtczuk, Steven↗

Development of standardized specifications for silicon solar cells

A space silicon solar cell assembly (cell and coverglass) specification aimed at standardizing the diverse requirements of current cell or assembly specifications was developed. This specification was designed to minimize both the procurement and manufacturing costs for space qualified silicon solar cell assembilies. In addition, an impact analysis estimating the technological and economic effects of employing a standardized space silicon solar cell assembly was performed.

Scott-Monck, J. A.↗

Diffusion lengths in irradiated N/P InP-on-Si solar cells

Indium phosphide (InP) solar cells were made on silicon (Si) wafers (InP/Si) by to take advantage of both the radiation-hardness properties of the InP solar cell and the light weight and low cost of Si wafers. The InP/Si cell application is for long duration and/or high radiation orbit space missions. Spire has made N/P InP/Si cells of sizes up to 2 cm by 4 cm with beginning-of-life (BOL) AM0 efficiencies over 13% (one-sun, 28C). These InP/Si cells have higher absolute efficiency and power density after a high radiation dose than gallium arsenide (GaAs) or silicon (Si) solar cells after a fluence of about 2e15 1 MeV electrons/sq. cm. In this work, we investigate the minority carrier (electron) base diffusion lengths in the N/P InP/Si cells. A quantum efficiency model was constructed for a 12% BOL AM0 N/P InP/Si cell which agreed well with the absolutely measured quantum efficiency and the sun-simulator measured AM0 photocurrent (30.1 mA/sq. cm). This model was then used to generate a table of AM0 photocurrents for a range of base diffusion lengths. AM0 photocurrents were then measured for irradiations up to 7.7e16 1 MeV electrons/sq. cm (the 12% BOL cell was 8% after the final irradiation). By comparing the measured photocurrents with the predicted photocurrents, base diffusion lengths were assigned at each fluence level. A damage coefficient K of 4e-8 and a starting (unirradiated) base electron diffusion length of 0.8 microns fits the data well. The quantum efficiency was measured again at the end of the experiment to verify that the photocurrent predicted by the model (25.5 mA/sq. cm) agreed with the simulator-measured photocurrent after irradiation (25.7 mA/sq. cm).

Wojtczuk, Steven↗

Real-time and accelerated outdoor endurance testing of solar cells

Materials for solar-cell module construction have been studied on the basis of limited real-time outdoor exposure evaluations. The materials tested included transmission samples, sub-modules, and actual solar cells. The results suggest that glass, fluorinated ethylene propylene, and perfluoroalkoxy are good materials for the covering or encapsulation of solar-cell modules. In all cases, dirt accumulation and cleanability are important factors.

Forestieri, A. F.↗

Enhancing electron diffusion length in narrow-bandgap perovskites for efficient monolithic perovskite tandem solar cells

Developing multijunction perovskite solar cells (PSCs) is an attractive route to boost PSC efficiencies to above the single-junction Shockley-Queisser limit. However, commonly used tin-based narrow-bandgap perovskites have shorter carrier diffusion lengths and lower absorption coefficient than lead-based perovskites, limiting the efficiency of perovskite-perovskite tandem solar cells. In this work, we discover that the charge collection efficiency in tin-based PSCs is limited by a short diffusion length of electrons. Adding 0.03 molar percent of cadmium ions into tin-perovskite precursors reduce the background free hole concentration and electron trap density, yielding a long electron diffusion length of 2.72 ± 0.15 um. It increases the optimized thickness of narrow-bandgap perovskite films to 1000 nm, yielding exceptional stabilized efficiencies of 20.2 and 22.7% for single junction narrow-bandgap PSCs and monolithic perovskite-perovskite tandem cells, respectively. This work provides a promising method to enhance the optoelectronic properties of narrow-bandgap perovskites and unleash the potential of perovskite-perovskite tandem solar cells.

14 SOLAR ENERGY↗

Chapter 1: Introduction - Motivation of Polycrystalline Thin-Film Solar Cells

Thin-film solar cell development may be conceptualized as improving processes to lower costs and improve performance, with characterization as a guide along the way. Yet, pushing the boundaries of characterization is as much at the core of thin-film solar cell development as material synthesis. As PV continues to mature, there is an endless drive to improve performance to compete. Hence, PV technology is striving for increasing levels of perfection, requiring a corresponding sophistication in characterization and understanding. Consequently, the topic of this book -advanced characterization-is timely and critical to develop the potential of thin-film solar technology.

material synthesis↗

Characterizing Non-Uniformity of Performance of Thin-Film Solar Cells

Thin-film Solar Cells are being actively studied for terrestrial and space applications because of their potential to provide low-cost, lightweight, and flexible electric power system. Currently, thin-film solar cell performance is limited partially by the nonuniformity of performance that they typically exhibit. This nonuniformity of performance necessitates more detailed characterization techniques than the well-known macroscopic measurements such as current-voltage and efficiency. This project seeks to explore methods of characterization that take into account the spatial nonuniformity of thin-film solar cells. In this presentation we show results of electroluminescence images, short-circuit maps, and Kelvin Probe maps. All these mapping characterization and analysis tools show that the non-uniformities can correlated with device performance and efficiency.

Clark, Eric B.↗

POSS(Registered TradeMark) Coatings for Solar Cells: An Update

Presently, solar cells are covered with Ce-doped microsheet cover glasses that are attached with Dow Corning DC 93-500 silicone adhesive. Various antireflection coatings are often applied to the cover glass to increase cell performance. This general approach has been used from the beginning of space exploration. However, it is expensive and time consuming. Furthermore, as the voltage of solar arrays increases, significant arcing has occurred in solar arrays, leading to loss of satellite power. The cause has been traced to differential voltages between strings and the close spacing between them with no insulation covering the edges of the solar cells. In addition, this problem could be ameliorated if the cover glass extended over the edges of the cell, but this would impact packing density. An alternative idea that might solve all these issues and be less expensive and more protective is to develop a coating that could be applied over the entire array. Such a coating must be resistant to atomic oxygen for low earth orbits below about 700 km, it must be resistant to ultraviolet radiation for all earth and near-sun orbits and, of course, it must withstand the damaging effects of space radiation. Coating flexibility would be an additional advantage. Based on past experience, one material that has many of the desired attributes of a universal protective coating is the Dow Corning DC 93-500. Of all the potential optical plastics, it appears to be the most suitable for use in space. As noted above, DC 93-500 has been extensively used to attach cover glasses to crystalline solar cells and has worked exceptionally well over the years. It is flexible and generally resistant to electrons, protons and ultraviolet (UV and VUV) radiation; although a VUV-rejection coating or VUV-absorbing ceria-doped cover glass may be required for long mission durations. It can also be applied in a thin coating (< 25 m) by conventional liquid coating processes. Unfortunately, when exposed to atomic oxygen (AO) DC 93-500 develops a frosty surface. Such frosting can lead to a loss of light transmitted into the cells and destroy the essential clarity needed for a concentrator lens.

Brandhorst, Henry↗

A Summary of The 2000-2001 NASA Glenn Lear Jet AM0 Solar Cell Calibration Program

Calibration of solar cells for space is extremely important for satellite power system design. Accurate prediction of solar cell performance is critical to solar array sizing, often required to be within 1%. The NASA Glenn Research Center solar cell calibration airplane facility has been in operation since 1963 with 531 flights to date. The calibration includes real data to Air Mass (AM) 0.2 and uses the Langley plot method plus an ozone correction factor to extrapolate to AM0. Comparison of the AM0 calibration data indicates that there is good correlation with Balloon and Shuttle flown solar cells. This paper will present a history of the airplane calibration procedure, flying considerations, and a brief summary of the previous flying season with some measurement results. This past flying season had a record 35 flights. It will also discuss efforts to more clearly define the ozone correction factor.

Scheiman, David↗

Piecewise simulaton proton test of gallium arsenide and thin silicon solar cells

Gallium Arsenide (GaAs) solar cells are viewed as a potential primary power source on certain future Earth orbiting satellites. However, the relative merits of gallium arsenide over silicon in a space radiation environment are largely unknown because a general degradation model for gallium arsenide does not exist. The results of a test simulating the proton radiation environment existing in a polar orbit and the concomitant effects on GaAs and thin silicon (Si) solar cells are presented. The objectives and methodology of the simulation test were discussed. The electrical characteristics of GaAs and Si solar cells are given in graph form. It was concluded that GaAs cells are viable for use on satellites in low Earth orbit.

Peterson, D. G.↗

Solar cell calibration techniques

Solar cell calibration techniques - measurements of absolute quantum yields, surface reflection losses, diffusion lengths, and junction properties

CALIBRATION↗

Gap/silicon Tandem Solar Cell with Extended Temperature Range

A two-junction solar cell has a bottom solar cell junction of crystalline silicon, and a top solar cell junction of gallium phosphide. A three (or more) junction solar cell has bottom solar cell junctions of silicon, and a top solar cell junction of gallium phosphide. The resulting solar cells exhibit improved extended temperature operation.

Landis, Geoffrey A.↗

Impact of undoped substrates on high performance silicon solar cells

Today's highest-efficiency silicon solar cells typically operate near the threshold between low-level and high-level injection. It is not well understood if pushing further into a regime in which the cell operating point is solidly in high-level injection at all times of the day has further benefits for the solar cell performance. From a reliability perspective, cells fabricated on lower doped silicon have a larger breakdown voltage. This advantage can affect the design of modules allowing higher voltages and a relaxation of the number of bypass diodes needed. In this project, we present a comprehensive assessment, both experimental and using simulation, of how bulk resistivity, light intensity, and operation temperature impact the performance of the silicon solar cell. This work incorporates a comprehensive device physics analysis assisted by numerical simulation. The source code is now available under General Public License (GPL3), and to further leverage the findings of this project and outreach people outside of the scientific community, we are working with www.pveducation.org (which receives >1 million visitors a year) to create interactive content using our simulation results. The simulation results indicate that high bulk resistivity wafers (>>10 Ωcm) require bulk Shockley-Read-Hall (SRH) lifetimes in the millisecond range to outperform wafers with standard bulk resistivities (<10 Ωcm). Additionally, above bulk resistivities of 10 Ωcm (the exact value depends on the bulk characteristics of the wafer), the cell efficiency is weakly dependent on the bulk resistivity. As a result, ingot manufactures may have an opportunity to further reduce wafer cost by growing higher resistivity ingots that are more tolerant to resistivity variations. This project is particularly relevant today, as solar cell architectures with improved surface passivation and milliseconds lifetimes wafers are commercially available, leveraging potential benefits of using higher bulk resistivities. Outside of interdigitated back contact (IBC) cell, reported studies on high resistivity silicon (>100 Ωcm) are very limited. To the best of our knowledge, this project provides for the first-time experimental insight on solar cells fabricated on wafers with bulk resistivities up to several thousand Ωcm, delivering a comprehensive vision of their performance under real-world temperature and light intensity operation conditions. We manufactured and characterized solar cells with bulk resistivities in the range of 1 Ωcm to >15k Ωcm. Under standard testing conditions (STC), we measured solar cells efficiencies over 20% over the entire range of bulk resistivities, using our baseline cell processing. To evaluate the cell performance in real-world operation conditions, the solar cells were measured at different temperatures (25-80°C) and at different light intensities (0.1-1 suns). The measurements show that the bulk resistivity does not impact the solar cell response to temperature and light intensity. Similar thermal coefficients (TC) were measured for standard and high bulk resistivities, and they are comparable with the TC values reported in the literature for standard bulk resistivities <10 Ωcm. After light soaking, the solar cell didn’t show signs of light-induced degradation (LID). This result was expected since n-type float zone (FZ) wafers were used in this work, i.e. low traces of boron and low concentration of oxygen (oxygen is typically found in the seed end of Czochralski (CZ) ingots). We measured for high bulk resistivities (>10 Ωcm) extremely high breakdown voltages (>1000V). In conclusion, the insight provided by this project can positively impact the levelized cost of energy (LCOE) of the photovoltaic systems through its effect on cell and ingot manufacturing yield, silicon cell power output, and module reliability.

14 SOLAR ENERGY↗

Silicon solar cell process. Development, fabrication and analysis

Solar cells were fabricated from unconventional silicon sheets, and the performances were characterized with an emphasis on statistical evaluation. A number of solar cell fabrication processes were used and conversion efficiency was measured under AMO condition at 25 C. Silso solar cells using standard processing showed an average efficiency of about 9.6%. Solar cells with back surface field process showed about the same efficiency as the cells from standard process. Solar cells from grain boundary passivation process did not show any improvements in solar cell performance.

Yoo, H. I.↗

Systems and methods for reworking shingled solar cell modules

A high efficiency configuration for a solar cell module comprises solar cells arranged in a shingled manner to form super cells, which may be arranged to efficiently use the area of the solar module, reduce series resistance, and increase module efficiency. Removing a defective solar cell from a super cell may be difficult, however. It may therefore be advantageous to bypass defective solar cells in a super cell rather than remove and replace them. A bypass conductor may be applied to the rear surface of the super cell to bypass one or more defective solar cells in a super cell or in a solar module comprising super cells.

Caswell, Nathaniel Alexis↗