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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Carbon Coating Influence on the Formation of Percolating Electrode Networks for Silicon Anodes

Previous studies have demonstrated that chemical vapor deposition carbon coating on silicon (Si@C) can enhance the electrochemical performance of lithium-ion batteries with Si-based anodes. However, the underlying mechanisms contributing to this improvement have not been fully explored. Here, we address this knowledge gap by applying a suite of characterization methods to evaluate Si@C anodes prepared by reducing acetylene on ball-milled Si particles. Raman mapping measurements show that the C coating (<5 nm thick) enables a homogeneous Si and carbon distribution during the slurry casting process, thereby promoting Si utilization during cycling. The coating’s microstructure and morphology were evaluated using X-ray photoelectron spectroscopy (XPS), scanning transmission electron microscopy, and neutron reflectivity experiments. Electrochemical impedance spectroscopy measurements upon cycling indicate that carbon coating also reduces the overall resistance as benchmarked against bare Si anodes. Galvanostatic cycling in half-cell studies revealed higher initial Coulombic efficiency and specific capacities with increasing carbon coating time. However, solid electrolyte interphase (SEI) investigations using XPS showed that the coated and uncoated samples have very similar characteristics, suggesting that the SEI may only play a minor role in enhancing the performance of Si@C. Full-cell evaluation of the Si electrodes was consistent with half-cell results relating to performance and SEI properties, further supporting the conclusion that electronic and ionic percolation, enabled by effective electrode manufacturing, are the dominant factors contributing to the favorable performance of Si@C.

25 ENERGY STORAGE↗
DOE OSTI2021

Architecture and properties of TCR fuel form

The fuel form developed for the Transformational Challenge Reactor demonstration program leverages recent advances in manufacturing, materials, and computational sciences, delivering a new architecture for production of high-performance microencapsulated nuclear fuels. The fuel consists of conventionally manufactured uranium nitride tristructural isotropic fuel particles embedded inside a 3D-printed silicon carbide matrix. Finally, this paper describes the overall architecture and manufacturing process for this fuel form, its properties and behavior, and the ongoing development activities.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2024

Impact of anisotropy on TRISO fuel performance

Manufacturing of tristructural isotropic (TRISO) particles involves the deposition of pyrolytic carbon (PyC) and silicon carbide (SiC) layers using the fluidized bed chemical vapor deposition (CVD) process. The CVD process is known to generate polycrystalline layers with crystallographic textures, which imparts anisotropic thermophysical properties to the layers. Past studies have shown the risk for particle failure increases with an increase in anisotropy. The limit beyond which the anisotropy of PyC layers becomes unacceptable due to failure risk has been identified as a high-priority knowledge gap. This work presents a first systematic study on the effects of anisotropic thermal and mechanical properties on TRISO fuel performance. This computational study, performed using the fuel performance code BISON, investigates how the anisotropy in elasticity and thermal properties affect the stresses, temperature, and failure of a TRISO particle. The influence of other factors, such as operating temperature and particle geometry on the anisotropy effects, also has been analyzed. The studies utilize the recently published anisotropic elasticity and thermal behavior models for TRISO PyC and SiC layers implemented using tensors with full anisotropic capability. The spherical TRISO particles with anisotropic properties were found to have greater maximum tensile stress and significantly higher failure probability than the spherical particles with isotropic properties. In conclusion, the fuel performance predicted using these recently developed models was found to be comparable with the performance obtained using the historical models.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2020

Synthesis and Crystallization of Atomic Layer Deposition β-Eucryptite LiAlSiO 4 Thin-Film Solid Electrolytes

Atomic layer deposition (ALD) was used to control the stoichiometry of thin lithium aluminosilicate films, thereby enabling crystallization into the ion-conducting β-eucryptite LiAlSiO 4 phase. Here, the rapid thermal annealed ALD film developed a well-defined epitaxial relationship to the silicon substrate: β-LiAlSiO4 ($1\bar{21}0$)||Si (100) and β-LiAlSiO 4 ($10\bar{10}$)||Si (001). The extrapolated room temperature ionic conductivity was found to be 1.2 × 10 –7 S/cm in the [$1\bar{21}0$] direction. Because of the unique 1-D channel along the c axis of β-LiAlSiO 4 , the epitaxial thin film has the potential to facilitate ionic transport if oriented with the c axis normal to the electrode surface, making it a promising electrolyte material for three-dimensional lithium-ion microbatteries.

25 ENERGY STORAGE↗
DOE OSTI2024

Tunable quantum emitters on large-scale foundry silicon photonics

Abstract Controlling large-scale many-body quantum systems at the level of single photons and single atomic systems is a central goal in quantum information science and technology. Intensive research and development has propelled foundry-based silicon-on-insulator photonic integrated circuits to a leading platform for large-scale optical control with individual mode programmability. However, integrating atomic quantum systems with single-emitter tunability remains an open challenge. Here, we overcome this barrier through the hybrid integration of multiple InAs/InP microchiplets containing high-brightness infrared semiconductor quantum dot single photon emitters into advanced silicon-on-insulator photonic integrated circuits fabricated in a 300 mm foundry process. With this platform, we achieve single-photon emission via resonance fluorescence and scalable emission wavelength tunability. The combined control of photonic and quantum systems opens the door to programmable quantum information processors manufactured in leading semiconductor foundries.

Larocque, Hugo (ORCID:000900095849780X)↗
DOE OSTI2025

Rheology improvement for silicon nitride and resin slurries for vat photopolymerization printing and sintering

This work presents the formulation, rheological characterization, and sintering of silicon nitride (Si₃N₄) slurries for vat photopolymerization (VPP) using digital light processing (DLP). Bimodal Si₃N₄ powder was dispersed into commercial photopolymer resin using two different dispersants with opposing effects on surface charge, resulting in varied slurry stability and flow behavior. Slurries were engineered to exhibit shear-thinning behavior suitable for VPP, and their flow properties were quantified using a power-law fluid model. The formulations achieved cure depths of approximately 40 µm and enabled printing of green bodies. Post-processing included thermal debinding and liquid-phase sintering, yielding primarily β-Si₃N₄ with a minor Y-Si-Al-O-N glass phase. The sintered parts reached ~85% of theoretical density and demonstrated a flexural strength of ~330 MPa. Microstructural analysis revealed closed porosity along with some defects related to powder agglomeration and interlayer adhesion. These findings provide insights into slurry formulation strategies for additive manufacturing of high-performance non-oxide ceramics.

Aerospace engineering↗
DOE OSTI2021

Electroabsorption optical modulator

An electroabsorption modulator that operates based on electroabsorption of a surface plasmon polariton mode is improved by various structural changes and/or selection of different materials. For example, at least a portion of the waveguide may be made to be conductive, e.g., by doping. Also, layers that make up the modulator structure may be placed along sides of waveguides in addition to or instead of simply on the top thereof. High permittivity gate dielectric materials may be employed. Also, materials other than ITO may be employed as a transparent conductor. Such an improved plasmonic electroabsorption modulator can be fabricated using standard semiconductor processing techniques and may be integrated with standard photonic integrated circuits, including silicon photonics and compound semiconductor-based platforms. Advantageously, high-speed, low-voltage operation over a wide spectrum of wavelengths may be achieved.

Wood, Michael↗
DOE OSTI2020

Damp Heat Induced Degradation of Silicon Heterojunction Solar Cells With Cu-Plated Contacts

Damp heat exposure is one of the most stringent environments for testing the durability of solar cells in packaged modules. Damp heat stresses and induces a variety of degradation modes in solar cells and modules: for example, moisture-induced corrosion of electrodes and interconnections, deterioration of polymeric materials, and/or thermally activated diffusion processes. To screen for these and other potential degradation modes, we subject one-cell modules containing silicon heterojunction (SHJ) solar cells with Cu-plated contacts to extended damp heat tests at 85 °C/85% relative humidity. SHJ cells were laminated with two common encapsulants: ethylene vinyl acetate (EVA) and polyolefin elastomer (POE), and two constructions: glass-backsheet and glass-glass. We observe degradation in all components of solar cell maximum power (PMP): current, voltage, and fill factor, and find evidence of increased carrier recombination and nonideal diode behavior with increasing stress. For glass-backsheet constructions, EVA samples generally degrade more than POE by a factor of approximately 1.5x PMP, and the different encapsulants produce different degradation patterns. Similar trends are observed in glass-glass modules, but to a lesser degree. In a different experiment, we observe a decrease in effective minority carrier lifetime of nonmetallized SHJ precursors measured after damp heat. This implies that some degradation unrelated to the contacts is to be expected and confirms the observation of increasing recombination.

14 SOLAR ENERGY↗
DOE OSTI2020

Photothermal alternative to device fabrication using atomic precision advanced manufacturing techniques

The attachment of dopant precursor molecules to depassivated areas of hydrogen-terminated silicon templated with a scanning tunneling microscope (STM) has been used to create electronic devices with sub-nanometer precision, typically for quantum physics demonstrations, and to dope silicon past the solid-solubility limit, with potential applications in microelectronics and plasmonics. However, this process, which we call atomic precision advanced manufacturing (APAM), currently lacks the throughput required to develop sophisticated applications because there is no proven scalable hydrogen lithography pathway. Here, we demonstrate and characterize an APAM device workflow where STM lithography has been replaced with photolithography. An ultraviolet laser is shown to locally heat silicon controllably above the temperature required for hydrogen depassivation. STM images indicate a narrow range of laser energy density where hydrogen has been depassivated, and the surface remains well-ordered. A model for photothermal heating of silicon predicts a local temperature which is consistent with atomic-scale STM images of the photo-patterned regions. Finally, a simple device made by exposing photo-depassivated silicon to phosphine is found to have a carrier density and mobility similar to that produced by similar devices patterned by STM.

42 ENGINEERING↗
DOE OSTI2020

Additive manufacturing of silicon carbide for nuclear applications

Additive manufacturing (AM) is a rapidly evolving technology being considered for nuclear applications. A special focus on AM to fabricate nuclear-grade silicon carbide (SiC) is explored in this paper. First, we present currently available AM processing options for SiC. AM methods commonly used for other ceramics, in which the feedstocks are forms of polymers, powders, and/or reactive chemical vapors, are also applicable to SiC. SiC phases are formed by pyrolysis of pre-ceramic polymer, direct reaction of powder precursors, sintering of SiC powders, or chemical vapor deposition/infiltration. Second, we discuss how the different microstructures of SiC materials fabricated by various processing methods affect their behavior in nuclear environments. Third, we discuss state-of-the-art AM technologies for the fabrication of relatively pure SiC, which show great potential to retain its strength under neutron irradiation: (1) binder jet printing followed by chemical vapor infiltration, (2) laser chemical vapor deposition, and (3) selective laser sintering of SiC powders.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Residual Stresses Affect Cell Fragment Movement

Predictive modeling tools such as the finite element method can be of tremendous help in assessing the reliability and long-term performance of photovoltaic modules. In order to obtain accurate results, the proper modeling of materials and manufacturing processes are of utmost importance. Module fabrication introduces thermo-mechanical stresses inside the module laminate, which need to be accounted for as residual stresses in finite element simulations. We found that cell fragment movement and crack opening displacements of fractured silicon cells within modules are affected by those residual stresses. Cell cracking remains a challenging topic in assessing the reliability and durability of damaged modules. Hence, accurately quantifying the separation and movement between cell fragments creates the foundation for establishing reliable lifetime and performance assessments of fractured silicon modules. Here, we present a modeling approach that uses upper and lower bounds to accurately account for the residual stresses introduced by the module lamination process. We designed a four-point flexure coupon test of a laminated, fractured silicon strip to validate our numerical results and found good agreement between our modeling methodology and the experimental data. Finally, we discuss the implications of the residual stresses on the normal crack opening and metallization wear-out of fractured silicon cells.

14 SOLAR ENERGY↗
DOE OSTI2022

Characterization of the molecular mechanisms of silicon uptake in coccolithophores

Coccolithophores are an important group of calcifying marine phytoplankton. Although coccolithophores are not silicified, some species exhibit a requirement for Si in the calcification process. These species also possess a novel protein (SITL) that resembles the SIT family of Si transporters found in diatoms. However, the nature of Si transport in coccolithophores is not yet known, making it difficult to determine the wider role of Si in coccolithophore biology. Here, we show that coccolithophore SITLs act as Na + -coupled Si transporters when expressed in heterologous systems and exhibit similar characteristics to diatom SITs. We find that CbSITL from Coccolithus braarudii is transcriptionally regulated by Si availability and is expressed in environmental coccolithophore populations. However, the Si requirement of C. braarudii and other coccolithophores is very low, with transport rates of exogenous Si below the level of detection in sensitive assays of Si transport. As coccoliths contain only low levels of Si, we propose that Si acts to support the calcification process, rather than forming a structural component of the coccolith itself. Si is therefore acting as a micronutrient in coccolithophores and natural populations are only likely to experience Si limitation in circumstances where dissolved silicon (DSi) is depleted to extreme levels.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2021

Fabrication of Silicon Sensors Based on Low-Gain Avalanche Diodes

Low-Gain Avalanche Diodes are a recently-developed class of silicon sensors. Characterized by an internal moderate gain that enhances the signal amplitude and if built on thin silicon substrates of a few tens of microns, they feature fast signals and exhibit excellent timing performance. Thanks to their fast timing they are planned to be exploited in timing detectors in High-Energy Physics experiments, for example for the upgrades of the ATLAS and CMS detectors at the High Luminosity Large Hadron Collider (HL-LHC) at CERN. However, to achieve a spatially uniform multiplication a large pixel pitch is needed, preventing a fine spatial resolution. To overcome this limitation, the AC-coupled LGAD approach was introduced. In this type of device, metal electrodes are placed over an insulator at a fine pitch, and signals are capacitively induced on these electrodes. The fabrication technology is similar for the two LGAD families, although a fine tuning of a few process parameters needs to be carefully studied. Other R&D efforts towards detectors that can simultaneously provide good time and spatial resolution, based on the LGAD concept, are under way. These efforts aim also to mitigate the loss of performance at high irradiation fluences due to the acceptor removal within the gain layer. In this paper we describe the main points in the fabrication of LGADs and AC-LGADs in a clean-room. We also discuss novel efforts carried on related topics.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

On-chip non-Hermitian optical parametric amplifiers with a large bandwidth

Recently, our groups have introduced the notion of optical parametric amplification based on non-Hermitian phase matching wherein the incorporation of loss can lead to gain in this nonlinear optical process. Previous simulation results using second-order nonlinear optical coupled-mode theory have demonstrated the potential of this technique as an alternative to the stringent phase-matching condition, which is often difficult to achieve in semiconductor platforms. Here we fortify this notion for the case of third-order nonlinearity by considering parametric amplification in silicon nanowires and illustrate the feasibility of these devices by employing rigorous finite-difference time-domain analysis using realistic materials and geometric parameters. Particularly, we demonstrate that by systematic control of the optical loss of the idler in a four-wave mixing process, we can achieve efficient unidirectional energy conversion from the pump to the signal component even when the typical phase-matching condition is violated. Importantly, our simulations show that a signal gain of ∼ <#comment/> 9 d B for a waveguide length of a few millimeters is possible over a large bandwidth of several hundreds of nanometers ( ∼ <#comment/> 600 n m ). This bandwidth is nearly 2 orders of magnitude larger than what can be achieved in the conventional silicon-photonics-based four-wave mixing process.

Ahmed, Asif (ORCID:0000000152234392)↗
DOE OSTI2020

Quantification of silicon carbide grain structure in TRISO fuel by BSE image analysis

The grain structure of the silicon carbide (SiC) layer in tristructural-isotropic (TRISO) fuels has commonly been qualified in fuel specifications based on a qualitative comparison to visual standards to ensure undesirable microstructure are not produced. This approach is inherently dependent on subjective judgement and provides limited data for analysis or comparison. An alternative method to rapidly quantify (i.e., provide a numeric measure of) the grain structure of the SiC layer in TRISO fuels has been developed. This method relies on the identification of silicon carbide grain boundaries based on brightness variation in backscattered electron (BSE) images through the application of automated image processing algorithms. The speed with which the requisite BSE imaging and analysis may be completed enables the practical use of this method on an industrial scale as a part of qualifying TRISO fuel to meet a given specification on silicon carbide grain structure, which is an important parameter for TRISO fuel performance. The method is benchmarked by comparison to prior Electron-Backscattered Diffraction (EBSD) results for TRISO particles from the Advanced Gas Reactor (AGR) program.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2021

Probing the Reactivity of the Active Material of a Li-Ion Silicon Anode with Common Battery Solvents

Calculations and modeling have shown that replacing the traditional graphite anode with silicon can greatly improve the energy density of lithium-ion batteries. However, the large volume change of silicon particles and high reactivity of lithiated silicon when in contact with the electrolyte lead to rapid capacity fading during charging/discharging processes. In this report, we use specific lithium silicides (LS) as model compounds to systematically study the reaction between lithiated Si and different electrolyte solvents, which provides a powerful platform to deconvolute and evaluate the degradation of various organic solvents in contact with the active lithiated Si-electrode surface after lithiation. Nuclear Magnetic Resonance (NMR) characterization results show that a cyclic carbonate such as ethylene carbonate is chemically less stable than a linear carbonate such as ethylmethyl carbonate, fluoroethylene carbonate, and triglyme as they are found to be more stable when mixed with LS model compounds. Furthermore, guided by the experimental results, two ethylene carbonate (EC)-free electrolytes are studied, and the electrochemical results show improvements with graphite-free Si electrodes relative to the traditional ethylene-carbonate-based electrolytes. More importantly, the study contributes to our understanding of the significant fundamental chemical and electrochemical stability differences between silicon and traditional graphite lithium-ion battery (LIB) anodes and suggests a focused development of electrolytes with specific chemical stability vs lithiated silicon which can passivate the surface more effectively.

25 ENERGY STORAGE↗
DOE OSTI2020

Detection and Localization of Damaged Photovoltaic Cells and Modules Using Spread Spectrum Time Domain Reflectometry

The operating efficiency of photovoltaic (PV) plants can be improved if damaged or degraded modules can be detected and identified. Currently, string-level power electronics can detect problems with modules or cabling but not locate them, which would facilitate addressing these issues. Here, we investigate the ability of spread spectrum time domain reflectometry (SSTDR) to both detect and locate/identify damaged cells and modules within a series-connected PV string. We tested the ability of SSTDR to detect and locate single-cell mini-modules and full-sized PV modules, which were intentionally damaged by impacts with a hammer (breaking the glass and damaging the silicon below) or by cutting through some or all busbars. Damage to the glass and silicon of cells was detected and located within a small string of minimodules. Busbar damage was detectable only if an open was created by cutting through all intercell busbars. Furthermore, physical impact damage to the glass and silicon of a full-sized PV module could be detected, but further development of signal processing is needed to achieve localization of such damaged modules within a string.

14 SOLAR ENERGY↗
DOE OSTI2020

Atomic force microscopy phase imaging of epitaxial graphene films

Abstract Dynamic mode atomic force microscopy phase imaging is known to produce distinct contrast between graphene areas of different atomic thickness. But the intrinsic complexity of the processes controlling the tip motion and the phase angle shift excludes its use as an independent technique for a quantitative type of analysis. By investigating the relationship between the phase shift, the tip-surface interaction, and the thickness of the epitaxial graphene areas grown on silicon carbide, we shed light on the origin of such phase contrast, and on the complex energy dissipation processes underlying phase imaging. In particular, we study the behavior of phase shift and energy dissipation when imaging the interfacial buffer layer, single-layer, and bilayer graphene regions as a function of the tip-surface separation and the interaction forces. Finally, we compare these results with those obtained on differently-grown quasi free standing single- and bilayer graphene samples.

Lavini, Francesco (ORCID:0000000257223040)↗