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At least 289 records · Page 16

Ink-based laser powder bed fusion of barium titanate

Barium titanate (BTO) is a lead-free functional ceramic that is widely used in sensors, transducers, and actuators. The increasing demand for complex geometries and quick design iterations motivates the use of additive manufacturing techniques. Laser powder bed fusion (L-PBF) additive manufacturing technique enables the net-shape or near-net-shape fabrication of metals and alloys. Ceramic L-PBF remains challenging due to their high melting temperature. Here, to address this challenge, a nanoparticle ink feedstock was incorporated into the L-PBF process to allow low power melting of BTO. Key print parameters (i.e. laser power, scanning speed, and hatching spacing) were optimized to fabricate millimeter-scale BTO parts. The printed BTO samples possessed an inhomogeneous equiaxed-columnar-cellular microstructure. Semiconducting current-voltage behavior was observed in as-printed samples, which was attributed to the creation of oxygen vacancies. The piezoelectric d 33 coefficient was measured to be 4.6 pC/N.

Dielectrics↗

Laser-induced digital oxidation for copper-based flexible photodetectors

Copper oxide compounds (Cu x O) with bandgaps of 1.3–2.1 eV (CuO) and 2.1–2.6 eV (Cu 2 O) have been investigated as promising p-type semiconducting materials. Cu x O is generally obtained by deposition or thermal oxidation, but those methods are not optimal for flexible substrates. Furthermore, additional patterning steps are required to fabricate devices. In this work, we present an easy, controllable method to fabricate a metal-semiconductor-metal (MSM) photodetector using laser-induced oxidation of a thin Cu film. After laser irradiation, the Cu film is heated under ambient conditions, and this leads to a thermal oxidation reaction, in which Cu oxide is monolithically formed in the Cu film and a Cu-Cu x O-Cu MSM structure is produced. Since the laser offers localized heating, an arbitrary CuxO pattern can be written in the Cu film by spatially controlled heating. In addition, by optimizing the heating time, the laser-induced oxidation can be successfully performed even on a flexible substrate. To study the laser-induced oxidation, we examined the correlation between laser parameters and the oxidation pattern and analyzed the composition using scanning electron microscopy, Raman spectroscopy, and X-ray photoemission spectroscopy. Furthermore, we measured the transient photoresponse and employed scanning photocurrent microscopy to investigate the mechanism of carrier transport behavior.

36 MATERIALS SCIENCE↗

Enhanced optoelectronic and elastic responses in fluorinated penta-BCN

We report surface passivation in two-dimensional (2D) materials is one of the best approaches to modulate the structural, dynamical, and mechanical stabilities thereby enhancing chemical and physical properties for optoelectronic applications. Here, we report an ab-initio investigation on structurally, thermally, dynamically, and mechanically stable, and experimentally feasible fluorinated penta-BCN (F-BCN) monolayer. The structural reconstruction after fluorination, increases bond lengths and thickness to reduce the average stiffness and elasticity attaining the mechanical isotropy. Nevertheless, the value of 2D Young’s modulus of F-BCN is comparable to the pristine structure at 6% of compression without mechanical instability. A significant bandgap tailoring is achieved, similar to that of mechanical sensitivity, due to applied strain. Remarkably, following the fluorine passivation, the monolayer’s induced wide direct bandgap semiconducting behavior improves optical absorbance and reflectivity, decreases energy loss, changes optical anisotropy, and makes it a promising candidate material for optoelectronic and nanomechanical applications.

36 MATERIALS SCIENCE↗

Origin of the background absorption in carbon nanotubes: Phonon-assisted excitonic continuum

Excitonic effects in 1D semiconductors can be qualitatively different from those in higher dimensions. In particular, the Sommerfeld factor, the ratio of the above-band-edge excitonic continuum absorption to free electron-hole pair generation, has been shown to be less than 1 (suppressed) in 1D systems while it is larger than 1 (enhanced) in 2D and 3D systems. Strong continuum suppression indeed exists in semiconducting single-wall carbon nanotubes, a prototypical 1D semiconductor. However, absorption spectra for carbon nanotubes are typically fit with a combination of Lorentzians and a polynomial background baseline with little physical meaning. We performed absorption measurements in aligned single-chirality (6,5) carbon nanotube films. The obtained spectra were fit with our theoretical model obtained by solving the Boltzmann scattering equation involving fifty-nine different types of transitions among three different types of quasiparticles. Specifically, we took into account microscopic interactions between photons, phonons, and excitons, including their dispersions, which unambiguously demonstrated that the background absorption is due to phonon-assisted transitions from the semiconductor vacuum to finite-momentum continuum states of excitons. The excellent agreement we obtained between experiment and theory suggests that our numerical technique can be seamlessly extended to compute strongly out-of-equilibrium many-body dynamics and time-resolved spectra in low-dimensional materials.

36 MATERIALS SCIENCE↗

Long carrier diffusion length in two-dimensional lead halide perovskite single crystals

Ruddlesden-Popper (RP) perovskites are two-dimensional semiconductors for high-performance optoelectronic devices. In this work, we report a long in-plane carrier diffusion length in 2D RP perovskite single crystals probed by scanning photocurrent microscopy. Carrier diffusion lengths of 7–14μm are observed when the number of PbI 6 –2 octahedra between organic spacers increases from 1 to 3. Using detailed light intensity and electric-field-dependent photocurrent measurements, we attribute the observed long diffusion length to the dominating dissociated free carrier transport. This is further validated by time-resolved photoluminescence measurements, where the decay lifetime increases in the presence of an electric field. From our experiments, we conclude that the in-plane transport in RP perovskites is efficient because of the partial free carrier generation, which overcomes strong excitonic effects. In conclusion, our results suggest that semiconducting devices fabricated from RP perovskite single crystals can be as efficient as their 3D counterparts.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Photoelectrocatalytic reduction of CO 2 to formate using immobilized molecular manganese catalysts on oxidized porous silicon

The reduction of carbon dioxide (CO 2 ) to formate using molecular catalysts immobilized on high surface area porous silicon is described. Manganese complexes of the type ( R bpy)Mn(CO) 3 Br (bpy = 2,2′-bipyridine) were prepared with silatrane groups on the bpy ligand for attachment to oxide-coated porous silicon (SiO x -porSi). SiO x -porSi wafers were formed by heating hydrogen-terminated p-type porous silicon wafers under air, and the manganese complexes were immobilized on SiO x -porSi by heating at 80°C. The resulting hybrid photoelectrodes are photoelectrocatalysts for CO 2 reduction in acetonitrile containing 2.0 M triethylamine and 2.0 M isopropanol, yielding formate with high selectivity (>96%) and current density (∼0.6 mA/cm 2 ), excellent reproducibility, and a photovoltage of 280 mV at −1.75 V (versus ferrocenium/ferrocene) under 1 sun illumination. Here, the applied potential is close to the equilibrium potential for CO 2 reduction to formate. This work presents rare examples of immobilized molecular catalysts for CO 2 reduction to formate and the first on semiconducting silicon.

13 HYDRO ENERGY↗

Boltzmann machine modeling of layered MoS 2 synthesis on a quantum annealer

Two-dimensional layered materials are usually synthesized by chemical vapor deposition (CVD). Here we use the Restricted Boltzmann Machine (RBM) and its enhancement called Limited Boltzmann Machine (LBM) on a quantum computer to model the chemical vapor deposition (CVD) growth data for a MoS 2 monolayer. The CVD data for Boltzmann machines are generated by reactive molecular dynamics (RMD) simulations. The Boltzmann machines give insight into the semiconducting (2H) and metallic (1T) phases and defects generated during the CVD growth of MoS 2 . We compare the performances of the two types of Boltzmann machine models, i.e. RBM versus augmented topologies with limited intra-layer coupling between the hidden units (LBM). We show that limited topologies have a performance advantage over restricted topologies. We examine connectivity within our topological variants, explore hardware qubit mapping schemes, and discuss what performance differences may imply about locality within the data without prior knowledge.

36 MATERIALS SCIENCE↗

Hydrogen Localization and Cluster Formation in α-Zr from First-Principles Investigations

We report alpha-zirconium (α-Zr) is a hydrogen atom host material used in nuclear energy and semiconducting applications due to Zr's excellent properties such as corrosion resistance, low thermal neutrons cross-section, and thermodynamically favorable interstitial sequestering of H atoms. Herein we use density functional theory simulations to systematically analyze the initial stages of H insertion in the Zr matrix, and determine optimal hydrogen localization, distribution, and clustering tendencies from a thermodynamics and kinetics perspective. Our results suggest that H occupation of tetrahedral sites is strongly favored, consistent with previous experimental and theoretical studies. Further, a cooperative effect in H localization is shown where H atoms favor clustering. The H pair is found to be the most stable by occupying tetrahedral sites with pairs at second nearest-neighbor positions (TTn2). Among the four H atom clusters, the most favorable configuration has two TTn2 pairs forming "box " or "zig-zag" shaped-cluster with the pairs separated by 3.03 or 3.25 Å, respectively. Nudged elastic band simulations suggest that the formation of TTn2 is facile and is limited by the small diffusion barrier of the monomer of less than 0.1 eV. Further, the formation routes for the 4H atom clusters are also presented. The current study can serve as a foundation to systematically model H atom clustering in metals and alloys.

36 MATERIALS SCIENCE↗

Tuning bandgap and energy stability of Organic-Inorganic halide perovskites through surface engineering

Organohalide perovskite with a variety of surface structures and morphologies have shown promising potential owing to the choice of the type of heterostructure dependent stability. We systematically investigate and discuss the impact of 2-dimensional molybdenum-disulphide (MoS 2 ), molybdenum-diselenide (MoSe 2 ), tungsten-disulphide (WS 2 ), tungsten-diselenide (WSe 2 ), boron-nitiride (BN) and graphene monolayers on bandgap and energy stability of organic–inorganic halide perovskites. We found that MAPbI 3 deposited on BN-ML shows room temperature stability (-25 meV ~ 300 K) with an optimal bandgap of ~ 1.68 eV. The calculated absorption coefficient also lies in the visible-light range with a maximum of 4.9 × 10 4 cm –1 achieved at 2.8 eV photon energy. Furthermore, on the basis of our calculations, we suggest that the encapsulation of an organic–inorganic halide perovskite monolayers by semiconducting monolayers potentially provides greater flexibility for tuning the energy stability and the bandgap.

36 MATERIALS SCIENCE↗

Study the existing form of copper ( p-type oxide/segregation ) and its release mechanism from the passive film of Ti-7Cu alloy

For this work, the existing form of copper and its release mechanism from the passive film of Ti-7Cu alloy was studied by Quantitative analysis of depth profile and series of electrochemical tests. Results were interpreted within the Point Defect Model-II. Copper does not form any p-type (cuprous or cupric) oxide but preferentially oxidises at the metal/film interface and segregated as Cu interstitials ($Cu^+_i$) and become substituted as $Cu^{x'}_{Ti}$ in the oxygen-deficient TiO 2-x barrier layer having n-type semiconducting character. Eventually, the segregated species of Cu preferentially dissolute through the film as Cu ions into the solution at film/solution interface via the Esaki-tunnelling effect.

Siddiqui, Muhammad Ali↗

Effect of Cu on the passivity of Ti–xCu (x = 0, 3 and 5 wt%) alloy in phosphate-buffered saline solution within the framework of PDM-II

The effect of copper content on the passivity of Ti–xCu alloys in a phosphate-buffered saline electrolyte (pH 7.4), in the steady-state condition, was examined using potentiostatic polarization, electrochemical impedance spectroscopy, and Mott-Schottky analysis. The study demonstrates that the oxide layer forms on the Ti–xCu alloys surface have n-type semiconducting character, and the steady-state thickness of the oxide layer is observed linearly and depends on the applied potential. The study observations are in line with the predictions of the Point Defect Model (PDM-II), which provides a physiochemically realistic description of the oxide layer formation on Ti–xCu alloys. The observations reveal that the Cu additions result in a decrease in the charge transfer resistance and capacitances associated with the hydroxide and barrier layer, an increase in the donor density, and reduce the electrochemical resistance of the Ti–xCu alloys. The study also exhibits that the decrease in the steady-state current density after the initial addition of 3 wt% of Cu is attributed to the progressive substitution of copper on the cation sublattice of the film resulting in enhanced electrostatic interaction between the immobilized copper $Cu^{x'}_{Ti}$, and the mobile cation interstitials $Cu^{+}_{i}$, which carries the excess current over and that conveyed by oxygen vacancies $V^{••}_o$ in the barrier layer. Moreover, it is also observed that over a hundred-year implant period, about 0.006 cm (0.06 mm) of Ti–3Cu alloy is predicted to lose due to steady-state corrosion in the PBS solution under the given set of conditions, it is further seen that, as the Cu amount increased from 3 wt% to 5 wt% in the Ti–xCu alloys, the steady-state corrosion rate decreases.

Electrochemical Impedance Spectroscopy↗

Reduction of uranyl and uranyl-organic complexes mediated by magnetite and ilmenite: A combined electrochemical AFM and DFT study

Reduction of mobile aqueous uranyl complexes can be hindered by the strength of the uranyl-ligand complex and the resistivity of the complexes to electron transfer. Semiconducting solids, such as magnetite (Fe 3 O 4 ) and ilmenite (FeTiO 3 ), can facilitate otherwise-slow electron transfer between the reductant and oxidant, especially if these species are adsorbed on their surfaces as inner-sphere complexes. Electrons can then be shuttled through the surface or the structure. This process can be facilitated by either finding a new electron transfer path or by weakening or destroying the ligand-uranyl complex. Using in situ electrochemical atomic force microscopy (EC-AFM), we imaged reduction products of uranyl as mediated by magnetite and ilmenite in the absence or presence of the organic ligands, ethylenediaminetetraacetate (EDTA) and oxalate. In situ images of uranyl reduction show gradual nucleation and growth of reduced uranium on the mineral surfaces with decreasing reduction potentials. X-ray photoelectron spectroscopy (XPS) measurements indicate pentavalent uranium as the dominant uranium species resulting from uranyl reduction mediated by magnetite and ilmenite. The reduction potentials of uranyl-organic species relevant to our reaction system, (U VI O 2 ∙oxalate) 0 and (U VI O 2 ∙HEDTA) - , are derived using quantum–mechanical modeling and compared with the midpoint potentials obtained from cyclic voltammetry measurements. The spectroscopic, electrochemical, and computational data suggest that the catalysis of Fe-bearing minerals facilitates the reduction of uranyl-organic complexes. U(VI)-oxalate complexes are redox-active and participate directly in the reduction mediated by magnetite. In the presence of EDTA, reduction of uranyl may proceed in concert with ligand exchange between metals (i.e., U and Fe) on the mineral surface. Finally, the proposed mechanism is the breaking of uranyl-organic bonds upon interaction with the mineral surface followed by the formation of Fe-organic bonds, thereby allowing the reduction of hexavalent uranyl to pentavalent one.

58 GEOSCIENCES↗

Recent advances in rational design of defect-engineered photocatalysts toward sustainable NH 3 synthesis as H 2 carrier: From fundamental and development to machine-learning

In this study, we provide a detailed overview of the fundamental mechanisms underpinning photocatalytic N 2 reduction. We also discuss advances in catalyst design for the synthesis of NH 3 . Particular emphasis is placed on the role of surface defect engineering, which includes the creation of surface defects to enhance the performance of semiconducting photocatalysts for efficient N 2 reduction. In addition, the application of a machine learning-based computational modeling approach is discussed as an important driving force for predicting and regulating NH 3 synthesis efficiency based on catalyst features and reaction conditions. Finally, existing challenges and future perspectives for improving the performance of defect-engineered photocatalysts are outlined to contribute to the ongoing discourse on sustainable ammonia generation. This review aims to clarify recent progress in the rational design of defect-containing photocatalysts for the synthesis of NH 3 and encourages innovative approaches to catalyst optimization rather than solely focusing on new materials.

08 HYDROGEN↗

Effect of Ni deposition on CrI 3 monolayer: First-principles study

In our recent experimental work, we demonstrated that Ni thin film deposition can be used to tune the surface magnetic states in bulk CrI 3 . Here, we present the results of a computational study of Ni deposition on a CrI 3 monolayer. In particular, we compare structural, electronic, and magnetic properties of three different systems: a pristine CrI 3 monolayer, a CrI 3 monolayer with partial Ni coverage, and a CrI 3 monolayer with full Ni coverage. The corresponding cells used in our calculations are Cr 2 I 6 , Cr 2 I 6 Ni 1 , and Cr 2 I 6 Ni 3 . In Cr 2 I 6 Ni 1 , the Ni atom is positioned over the hollow site, which corresponds to the lowest energy configuration. In Cr 2 I 6 Ni 3 , the three Ni atoms are positioned over the single hollow site, and over the two Cr sites. Our calculations indicate that the partial coverage of CrI 3 monolayer with Ni retains the semiconducting nature of the parent compound, but results in a strong reduction of the energy band gap. At the same time, the full coverage of CrI 3 monolayer with Ni results in a metallic transition, with a highly spin-polarized (possibly half-metallic) electronic structure. The magnetic alignment of the CrI 3 monolayer with the deposited Ni is ferrimagnetic, due to the anti-aligned magnetic moments of Cr and Ni atoms. While the partial coverage of the CrI 3 monolayer with Ni has a moderate impact on the lattice parameter of the parent compound, full coverage by Ni results in a significant increase of the lattice constant. For both partial and full coverages, the lowest energy configuration corresponds to the Ni atoms being approximately aligned with the out-of-plane coordinate of the surface iodine layer. In addition, in the full coverage mode, the Cr layer exhibits a significant shift away from the Ni atoms, effectively “detaching” the Ni / I atomic layer from the rest of the cell.

2D magnetism↗

Ruthenium solubility and its impact on the crystallization behavior and electrical conductivity of MoO 3 -containing borosilicate-based model high-level nuclear waste glasses

The present study focuses on investigating the solubility of RuO 2 in a borosilicate-based model high-level waste glass and understanding its impact on the crystallization behavior and electrical conductivity of the resulting vitrified waste forms. The solubility limit of RuO 2 in the investigated glass composition has been determined to be 460 ppm by weight. The higher concentration of RuO 2 results in sub-micron sized Ru-rich inclusions in the glassy matrix, which eventually agglomerate to form needle-like and polyhedral RuO 2 crystals. It is observed that RuO 2 selectively promotes the crystallization of the rare-earth apatite phase over the powellite phase. The as-synthesized RuO 2 -containing glasses exhibit semiconducting behavior with a similar level of electrical conductivity below the glass transition. Here, the percolation of non-uniformly distributed RuO 2 inclusions may result in a formation of short-range low-resistive conduction pathways in the host glass matrix leading to an apparent metallic-like behavior of selected thin samples with the highest ruthenium content.

36 MATERIALS SCIENCE↗

Single crystal growth and characterization of new Zintl phase Ca 9 Zn 3.1 In 0.9 Sb 9

Complex Zintl phases have yielded a large variety of promising new thermoelectric materials. Here we report the discovery of the new Zintl phase Ca 9 (Zn 1– x In x ) 4 Sb 9 ( x ~ 0.9), needle-like crystals of which were serendipitously obtained from an In- and Sb-rich flux. Although its composition is reminiscent of Ca 9 Zn 4+ x Sb 9 , an excellent thermoelectric material with zT > 1, the substitution of In on the Zn site leads to the formation of an entirely new structure type. Single crystal X-ray diffraction revealed a structure characterized by T Sb 4 tetrahedra ( T = statistically disordered Zn and In atoms) and ZnSb 3 triangular units, which share common corners to form [ T 4 Sb 9 ] 18– polyanions. The average structure was found to have hexagonal symmetry. The valence electron count in this heavily-disordered structure appears to follows the Zintl-Klemm rules, suggesting semiconducting behavior. Single crystal electrical conductivity and Seebeck coefficient measurements support this conclusion, suggesting that the as-grown crystals are degenerate p -type semiconductors.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Piezo-electrocatalytic oxidation of methanol with UV-ozone treated wurtzite zinc oxide nanostructures

Leveraging mechanically-induced piezoelectric polarization, piezocatalysis emerges as a viable mechanism for enhancing the efficiency of catalytic processes. Nanostructured, catalytically active, rationally designed piezoelectric semiconductors can achieve high-performance catalysts for various applications using cost-effective electrocatalytic pathways, such as mechanical stimuli. We design and demonstrate for the first time a cost-effective, high-performance piezo-electrocatalyst for anodic methanol oxidation, which is crucial for the practical application and deployment of direct methanol fuel cells in a variety of emerging clean energy technologies. We synthesized wurtzite ZnO nanorods and nanosheets treated with UV-O 3 to characterize and compare their efficacy for piezo-electrocatalytic methanol oxidation. The generation of piezoelectric polarization charges in nanostructured semiconducting ZnO catalysts significantly increased their electrocatalytic performance. By elucidating the charge transfer between mechanically-deformed ZnO nanostructures and methanol molecules, we identified the underlying mechanism for the piezo-electrocatalytic process for methanol oxidation. The facile synthesis of high-quality ZnO nanostructures enables low-cost, scalable manufacture and direct integration into electrocatalysts whose performance could be enhanced by harvesting mechanical energy that would otherwise be wasted in the working environment.

30 DIRECT ENERGY CONVERSION↗

First evaluation of fast neutron imaging with LiInSe 2 semiconductors

Fast neutron imaging is a powerful tool to investigate elemental/isotopic compositions of objects, supporting both scientific studies as well as cargo scanning. Current neutron imaging systems are faced with challenges associated with timing, detection efficiency, and/or spatial resolution. Here, we report on the use of a semiconducting lithium indium diselenide neutron sensor coupled to a Timepix ASIC for fast neutron imaging. Using a 15 cm thick copper knife edge, the spatial resolution of the neutron imager was found to be 1.55 mm for 9 MeV neutrons. In conclusion, the experimental detection efficiency at 9 MeV was in general agreement with calculations.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗