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Results for “resistivity measurements”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Different interfacial reactivity of lithium metal chloride electrolytes with high voltage cathodes determines solid-state battery performance

A deep understanding of the interaction of the surface of cathode materials with solid electrolytes is crucial to design advanced solid-state batteries (SSBs). This is especially true for the new class of lithium metal chloride (Li-M-Cl) solid electrolytes which are receiving rapidly growing attention due to their very high oxidative stability (>4 V) in combination with good ionic conductivity that can enable long cell cycle life. While Li-M-Cl electrolytes typically contain resource-limited metals (M) such as indium or rare earths, work has focused on substituting M with more abundant elements such as zirconium. Via operando resistance measurements using intermittent current interruption we explore the dynamic evolution of the interphase at the surface of Ni-rich NCM85 or NCM111 cathode particles inside a working SSB with three different Li-(M 1 ,M 2 )-Cl catholytes (Li 3 InCl 6 , Li 2 Sc 1/3 In 1/3 Cl 4 and Li 5/2 Y 1/2 Zr 1/2 Cl 6 ) to reveal the impact of the cationic metal substitution on the interfacial chemistry. We show that the metal plays a critical role in determining high voltage stability, contrary to prior assumptions. Using a combination of cyclic voltammetry and ultraviolet photoelectron spectroscopy measurements of the electronic band structure to assess oxidative stability; coupled with DFT calculations and ToF-SIMS to evaluate products formed at the interface at different upper cutoff potentials and degrees of delithiation, we are able to differentiate between electrochemical and chemical degradation. We find that Li 2 Sc 1/3 In 1/3 Cl 4 yields the highest (and Li 3 InCl 6 the lowest) stability against electrochemical oxidation, while Li 5/2 Y 1/2 Zr 1/2 Cl 6 undergoes a detrimental chemical reaction with oxygen released from Ni-rich NCM85 at high potentials, resulting in fast capacity fading. Altogether, our work establishes a platform for the metrics and an approach that can be utilized to efficiently evaluate the stability of new halide SEs in SSB cells.

25 ENERGY STORAGE↗
DOE OSTI2021

Magnetic and electronic structures of antiferromagnetic topological material candidate EuMg 2 Bi 2

In this work, EuMg 2 Bi 2 has been investigated to understand the electronic and magnetic behaviors as an antiferromagnetic (AFM) topological semimetal candidate. High-quality single crystals of EuMg 2 Bi 2 were grown via a Bi flux and, subsequently, characterized to be consistent with the previously reported bulk magnetic and resistivity properties. A ferromagnetic interaction is indicated by the positive Curie–Weiss temperature obtained through fitting the bulk magnetic susceptibility data. The bulk resistivity measurements reveal an interesting electronic behavior that is potentially influenced by a competing antiferromagnetic and ferromagnetic interaction in and out of the ab plane. From the resulting refinement of the neutron diffraction data, EuMg 2 Bi 2 was found to exhibit an A-type magnetic structure with Eu 2+ moments ferromagnetically aligned in the plane and antiferromagnetically stacked between neighbor ferromagnetic Eu layers. The power law fitting magnetic ordering parameter below TN~8 K agrees with the 2D Heisenberg model, indicating a weak interlayer antiferromagnetic interaction. Considering the magnetic structure determined by neutron diffraction, the surface state calculation suggests that EuMg 2 Bi 2 is an AFM topological insulator candidate. Linearly dispersed Dirac surface states were also observed in our angle-resolved photoemission spectroscopy measurements, consistent with the calculation.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Charge state transition levels of Ni in $β$-Ga 2 O 3 crystals from experiment and theory: An attractive candidate for compensation doping

Nickel-doped β-Ga 2 O 3 crystals were investigated by optical absorption and photoconductivity, revealing Ni-related deep levels. Here, the photoconductivity spectra were fitted using the phenomenological Kopylov and Pikhtin model to identify the energy of the zero-phonon transition (thermal ionization), Franck–Condon shift, and effective phonon energy. The resulting values are compared with the predicted ones by first-principle calculations based on the density functional theory (DFT). An acceptor level (0/-) of 1.9 eV and a donor level (+/0) of 1.1 eV above the valence band minimum are consistently determined for Ni Ga , which preferentially incorporates on the octahedrally coordinated Ga site. Temperature-dependent resistivity measurements yield a thermal activation energy of ~2.0 eV that agrees well with the determined Ni acceptor level. Conclusively, Ni is an eminently suitable candidate for compensation doping for producing semi-insulating β-Ga 2 O 3 substrates due to the position of the acceptor level (below and close to the mid-bandgap).

36 MATERIALS SCIENCE↗
DOE OSTI2020

Physical Properties of Half-Heusler Antiferromagnet MnPtSn Single Crystal

Herein we report the growth of ternary half-Heusler MnPtSn single crystals and detailed study on its structural and physical properties. MnPtSn single crystal has a larger lattice parameter than that in polycrystal and it exhibits antiferromagnetism with transition temperature T N at about 215 K, distinctly different from the ferromagnetism of MnPtSn polycrystal. Hall resistivity measurement indicates that the dominant carriers are hole-type and the nearly temperature-independent carrier concentration reaches about 2.86 × 10 22 cm –3 at 5 K. Moreover, the carrier mobility is also rather low (4.7 cm 2 ·V –1 s –1 at 5 K). The above results strongly suggest that the significant Mn/Sn anti-site defects, i.e., the content of Mn in MnPtSn single crystal, play a vital role on structural, magnetic and transport properties

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Superconductivity Observed in Tantalum Polyhydride at High Pressure

We report experimental discovery of tantalum polyhydride superconductor. It was synthesized under high-pressure and high-temperature conditions using diamond anvil cell combined with in situ high-pressure laser heating techniques. The superconductivity was investigated via resistance measurements at pressures. The highest superconducting transition temperature T c was found to be ∼ 30 K at 197 GPa in the sample that was synthesized at the same pressure with ∼ 2000 K heating. The transitions are shifted to low temperature upon applying magnetic fields that support the superconductivity nature. The upper critical field at zero temperature μ 0 H c2 (0) of the superconducting phase is estimated to be ∼ 20 T that corresponds to Ginzburg–Landau coherent length ∼ 40 Å. Our results suggest that the superconductivity may arise from I 4 ¯ 3 d phase of TaH 3 . It is, for the first time to our best knowledge, experimental realization of superconducting hydrides for the VB group of transition metals.

Physics↗
DOE OSTI2022

Tracking the nematicity in cuprate superconductors: a resistivity study under uniaxial pressure

Overshadowing the superconducting dome in hole-doped cuprates, the pseudogap state is still one of the mysteries that no consensus can be achieved. It has been suggested that the rotational symmetry is broken in this state and may result in a nematic phase transition, whose temperature seems to coincide with the onset temperature of the pseudogap state $T^{\,*}$ around optimal doping level, raising the question whether the pseudogap results from the establishment of the nematic order. Here we report results of resistivity measurements under uniaxial pressure on several hole-doped cuprates, where the normalized slope of the elastoresistivity ζ can be obtained as illustrated in iron-based superconductors. The temperature dependence of ζ along particular lattice axis exhibits kink feature at Tk and shows Curie–Weiss-like behavior above it, which may suggest a spontaneous nematic transition. While Tk seems to be the same as $T^{\,*}$ around the optimal doping and in the overdoped region, they become very different in underdoped La$_{2-x}$SrxCuO 4 . Our results suggest that the nematic order, if indeed existing, is an electronic phase within the pseudogap state.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Orbital hybridisation effects in B2 phase Cr doped Co 2 MnAl

Here we investigate here the magnetic, transport, local structural and electronic properties of Co 2 Mn 1−x Cr x Al (x = 0, 0.05, 0.1 and 0.2). Our results show that all the compounds stabilise in B2 phase and are ferromagnets. The results reveal disorder at the structural and magnetic levels. X-ray absorption near edge structure (XANES) analysis reveal signature of antisite disorder between Mn and Al atoms with equal ratio. The electronic structure calculations suggest enhancement in the half metallicity, localisation of electrons at the Fermi level and an increment in density of states with doping. The combined results of electronic structure calculations and XANES studies suggest transfer of electrons to the Co site. The results of high temperature resistivity measurements suggest the conduction electrons are undergoing transition from delocalisation to weak localisation to activated behaviour with Cr doping. The extended x-ray absorption spectroscopic analysis shows that the local structure around Mn atom is different from the global structure as obtained from the x-ray diffraction results. The behaviour of the edge region is in line with the trend as obtained from the compositional analysis. We observe link between the hybridisation of 3d like states at the Mn, Cr sites with that at the Co site and the transport properties. This could help in understanding the unusual decrement in the lattice parameter with doping. These results reveal the role of local structure in understanding the physical properties of such systems.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Stabilizing the heavily-doped and metallic phase of MoS 2 monolayers with surface functionalization

Monolayer molybdenum disulfide (MoS 2 ) is one of the most studied two-dimensional (2D) transition metal dichalcogenides that is being investigated for various optoelectronic properties, such as catalysis, sensors, photovoltaics, and batteries. One such property that makes this material attractive is the ease in which 2D MoS 2 can be converted between the semiconducting (2H) and metallic/semi-metallic (1T/1T') phases or heavily n-type doped 2H phase with ion intercalation, strain, or excess negative charge. Using n-butyl lithium (BuLi) immersion treatments, we achieve 2H MoS 2 monolayers that are heavily n-type doped with shorter immersion times (10–120 mins) or conversion to the 1T/1T' phase with longer immersion times (6–24 h); however, these doped/converted monolayers are not stable and promptly revert back to the initial 2H phase upon exposure to air. To overcome this issue and maintain the modification of the monolayer MoS 2 upon air exposure, we use BuLi treatments plus surface functionalization p-(CH 3 CH 2 ) 2 NPh-MoS 2 (Et 2 N-MoS 2 )—to maintain heavily n-type doped 2H phase or the 1T/1T' phase, which is preserved for over two weeks when on indium tin oxide or sapphire substrates. We also determine that the low sheet resistance and metallic-like properties correlate with the BuLi immersion times. These modified MoS 2 materials are characterized with confocal Raman/photoluminescence, absorption, x-ray photoelectron spectroscopy as well as scanning Kelvin probe microscopy, scanning electrochemical microscopy, and four-point probe sheet resistance measurements to quantify the differences in the monolayer optoelectronic properties. We will demonstrate chemical methodologies to control the modified monolayer MoS 2 that likely extend to other 2D transition metal dichalcogenides, which will greatly expand the uses for these nanomaterials.

2D TMDC↗
DOE OSTI2022

Anisotropic magnetic and transport properties of orthorhombic o-Pr 2 Co 3 Ge 5

Abstract The crystal structure, electron energy-loss spectroscopy (EELS), heat capacity, and anisotropic magnetic and resistivity measurements are reported for Sn flux grown single crystals of orthorhombic Pr 2 Co 3 Ge 5 (U 2 Co 3 Si 5 -type, Ibam ). Our findings show that o -Pr 2 Co 3 Ge 5 hosts nearly trivalent Pr ions, as evidenced by EELS and fits to temperature dependent magnetic susceptibility measurements. Complex magnetic ordering with a partially spin-polarized state emerges near T sp = 32 K, with a spin reconfiguration transition near T M = 15 K. Heat capacity measurements show that the phase transitions appear as broad peaks in the vicinity of T sp and T M . The magnetic entropy further reveals that crystal electric field splitting lifts the Hund’s rule degeneracy at low temperatures. Taken together, these measurements show that Pr 2 Co 3 Ge 5 is an environment for complex f state magnetism with potential strongly correlated electron states.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Vortex motion induced losses in tantalum resonators

Tantalum (Ta)-based superconducting circuits have been demonstrated to enable ultrahigh qubit quality factors (𝑄), motivating a careful study of the microscopic origin of the remaining losses that limit their performance. We have recently shown that the losses in Ta-based resonators are dominated by two-level systems at low microwave powers and millikelvin temperatures. We also observe that some devices exhibit loss that is exponentially activated at a lower temperature inconsistent with the superconducting critical temperature (T 𝑐 ) of the constituent film. Specifically, dc resistivity measurements show a T 𝑐 of over 4 K, while microwave measurements of resonators fabricated from these films show losses that increase exponentially with temperature with an activation energy as low as 0.3 K. Here, in this study, we present a comparative study of the structural and thermodynamic properties of Ta-based resonators and identify vortex motion-induced loss as the source of thermally activated microwave loss. Through careful magnetoresistance and x-ray diffraction measurements, we observe that the increased loss occurs for films that are in the clean limit, where the superconducting coherence length (𝜉) is shorter than the mean free path (𝑙). Vortex motion-induced losses are suppressed for films in the dirty limit, which show evidence of structural defects that can pin vortices. We verify this hypothesis by explicitly pinning vortices via patterning, and we find that we can suppress the loss by microfabrication.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Nernst power factor and figure of merit in the compensated semimetal ScSb

Recently, topological semimetals have emerged as strong candidates for solid-state thermomagnetic refrigerators due to their enhanced Nernst effect. This enhancement arises from the combined contributions of the Berry-curvature-induced anomalous Nernst coefficient associated with topological bands and the normal Nernst effect resulting from synergistic electron-hole compensation. Generally, these two effects are intertwined in topological semimetals, making it challenging to evaluate them independently. Here, we report the observation of a high Nernst effect in the electron-hole compensated semimetal ScSb with topologically trivial electronic band structures. Remarkably, we find a high maximum Nernst power factor of 𝑃⁢𝐹 𝑁 ∼ 35 × 10 −4 W m −1 K −2 in ScSb. The Nernst thermopower (𝑆 𝑥⁢𝑦 ) exhibits a peak of ∼ 47 µ⁢V/K at 12 K and 14 T, yielding a Nernst figure of merit (𝑧 𝑁 ) of ∼ 28 × 10 −4 K −1 . Notably, despite its trivial electronic band structure, both the 𝑃⁢𝐹 𝑁 and 𝑧 𝑁 values of ScSb are comparable to those observed in topological semimetals with Dirac band dispersions. In conclusion, the origin of the large Nernst signal in ScSb is explained by compensated electron and hole carriers, through Hall resistivity measurements, angle-resolved photoemission spectroscopy, and density functional theory calculations.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Pressure suppresses the density wave order in kagome metal LuNb 6 ⁢Sn 6

The density waves that develop in kagome metals ScV 6 ⁢Sn 6 and LuNb 6 ⁢Sn 6 at low temperature appear to arise from underfilled atomic columns within a V-Sn or Nb-Sn scaffolding. Compressing this network with applied pressure in ScV 6 ⁢Sn 6 suppressed the structural transition temperature by constraining atomic rattling and inhibiting the shifts that define the structural modulation. We predicted that the density wave transition in LuNb 6⁢ Sn 6 at 68 K would be suppressed by pressure as well. In this Letter, we examine the pressure dependence of the density wave transition by measuring resistance vs temperature up to 2.26 GPa. We found the transition temperature is smoothly depressed and disappears around 1.9 GPa. In conclusion, this result not only addresses our prediction, but strengthens the rattling chains origin of structural instabilities in the HfFe 6⁢ Ge 6 -type kagome metals.

Charge density waves↗
DOE OSTI2020

Impact of nematicity on the relationship between antiferromagnetic fluctuations and superconductivity in FeSe 0.91 S 0.09 under pressure

The sulfur-substituted FeSe system, FeSe 1 - x S x , provides a versatile platform for studying the relationship among nematicity, antiferromagnetism, and superconductivity. Herein, by nuclear magnetic resonance (NMR) and resistivity measurements up to 4.73 GPa on FeSe 0.91 S 0.09 , we established the pressure- ( p -) temperature ( T ) phase diagram in which the nematic state is suppressed with pressure showing a nematic quantum phase transition (QPT) around p = 0.5 GPa , two superconductivity (SC) regions separated by the QPT appear, and antiferromagnetic (AFM) phase emerges above ~ 3.3 GPa . From the NMR results up to 2.1 GPa, AFM fluctuations are revealed to be characterized by the stripe-type wave vector which remains the same for the two SC regions. Furthermore, the electronic state is discovered to change in character from non-Fermi liquid to Fermi liquid around the nematic QPT and persists up to ~ 2.1 GPa . In addition, although the AFM fluctuations correlate with T c in both SC states, demonstrating the importance of the AFM fluctuations for the appearance of SC in the system, we found that, when nematic order is absent, T c is strongly correlated with the AFM fluctuations whereas T c weakly depends on the AFM fluctuations when nematic order is present. Our findings on FeSe 0.91 S 0.09 were shown to be applied to the whole FeSe 1 - x S x system and offer an insight into the relationship between AFM fluctuations and SC in Fe-based superconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Pressure dependence of antiferromagnetic and superconducting phases in U 2 Rh 1–x Pt x C 2

In this work, we report temperature (T)- and pressure (P)-dependent resistivity measurements on the isostructural compounds U 2 Rh 1–x Pt x C 2 (x = 0, 0.5, and 0.9) from which we construct a T–P–x phase diagram. Compounds with x = 0 and x = 0.5 are antiferromagnets below 22.1 and 9.4 K, respectively, and their Néel temperature (T N ) decreases under applied pressure. For x = 0, the critical pressure P c required to suppress T N to zero temperature is projected to be about 8.8 GPa, but P c for x = 0.5 is between 1.6 and 2.1 GPa. At atmospheric pressure, increasing Pt concentration in U 2 Rh (1–x) Pt x C 2 tunes magnetic transition temperatures to zero at a critical value of x c ≈ 0.7, and, consequently, we surmise the existence of a quantum-phase boundary in the P–x plane at T = 0 K that extends from (P = 0, x = xc) to (P c ≈ 8.8 GPa, x = 0). For x = 0.9, superconductivity appears at T c = 1.09 K , which decreases at a rate of ≈ –1 K/GPa that is nearly twice that found for U 2 PtC 2 whose T c is 1.47 K. Together, these results indicate that domes of magnetism and superconductivity formed with T–P–x variations are detached and that the two broken symmetries are independent of each other. Fluctuations in average composition produce rare regions that play an important role in determining physical properties of materials with noninteger x.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Flat bands in the CoSn-type compounds

Quantum interference on the kagome lattice generates electronic bands with narrow bandwidth, called flat bands. Crystal structures incorporating this lattice can host strong electron correlations with nonstandard ingredients, but only if these bands lie at the Fermi level. In the six compounds with the CoSn structure type (FeGe, FeSn, CoSn, NiIn, RhPb, and PtTl) the transition metals form a kagome lattice. The two iron variants are robust antiferromagnets so we focus on the latter four and investigate their thermodynamic and transport properties. We consider these results and calculated band structures to locate and characterize the flat bands in these materials. Finally, we propose that CoSn and RhPb deserve the community's attention for exploring flat-band physics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Influence of hydrostatic pressure on hidden order, the Kondo lattice, and magnetism in URu 2 Si 2-x P x

Within the chemical substitution series URu 2 Si 2-x P x , there is an evolution in the ground-state behavior from hidden ordered (HO) for x ≲ 0.03, to Kondo lattice behavior with no ordering (NO) for 0.03 ≲ x ≲ 0.26, to antiferromagnetism (AFM-2) for 0.26 ≲ x ≲ 0.5 [A. Gallagher et al., Nat. Commun. 7, 10712 (2016); A. Gallagher et al., J. Phys.: Condens. Matter 29, 024004 (2016)]. To better understand what factors control this behavior, temperature-dependent electrical resistivity measurements are performed for this series under applied pressures P up to 20.5 kbar. Specimens in the HO x region show similarities to the parent compound, where HO transforms into antiferromagnetism (AFM-1) at a critical pressure (P c ). P c decreases with increasing x and collapses towards P = 0 near x ≈ 0.03, suggesting that AFM-1 occurs at ambient pressure for this concentration. No pressure-induced phase transitions are observed in the NO x region and the AFM-2 state is only weakly suppressed by P. Measurements further reveal that AFM-1 and AFM-2 are distinct from each other. Calculations of the wave functions using the tight-binding Hartree-Fock approximation are performed and show (i) that the radial probability distributions for the phosphorus ions are more tightly bound than those for the silicon and (ii) that the energy difference between the orbitals decreases with increasing x. The cumulative effect of these two factors is that Si → P substitution decreases the hybridization strength, which correlates with the weakening of HO. At large x, additional effects such as electrical charge tuning also play an important role in determining the ground-state

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Insulating antiferromagnetism in VTe

Here, we report a detailed theoretical and experimental study on the vanadium monotelluride VTe, which crystallizes in the NiAs hexagonal structure. First-principles calculations reveal a complex hierarchy of magnetic interactions and energy scales, with the ground state theoretically determined as an ($\frac{1}{2}$, 0, $\frac{1}{2}$) antiferromagnetic ordering with insulating character and a band gap of 0.5 eV. Experimental synthesis and characterization efforts find a substantially off-stoichiometric orthorhombic structure (a defect NiAs structure) with composition V 0.85 Te, and an apparent Néel point of some 45 K. First-principles calculations find good agreement with the observed Néel point. We also give an extended examination of the effects of off-stoichiometry on the calculated energetics, finding significant volume-related effects. Our first-principles calculations find the stoichiometric phase VTe to have a negative vanadium defect formation energy of over 1 eV, thus explaining the formation of the off-stoichiometric phase. Finally, we provide a structural explanation for the formation of defect structures in this and numerous other NiAs-structure materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗