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At least 289 records · Page 16

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NASA NTRS1983

Geometric accuracy of LANDSAT-4 MSS image data

Analyses of the LANDSAT-4 MSS image data of North Georgia provided by the EDC in CCT-p formats reveal that errors of approximately + or - 30 m in the raw data can be reduced to about + or - 55 m based on rectification procedures involving the use of 20 to 30 well-distributed GCPs and 2nd or 3rd degree polynomial equations. Higher order polynomials do not appear to improve the rectification accuracy. A subscene area of 256 x 256 pixels was rectified with a 1st degree polynomial to yield an RMSE sub xy value of + or - 40 m, indicating that USGS 1:24,000 scale quadrangle-sized areas of LANDSAT-4 data can be fitted to a map base with relatively few control points and simple equations. The errors in the rectification process are caused by the spatial resolution of the MSS data, by errors in the maps and GCP digitizing process, and by displacements caused by terrain relief. Overall, due to the improved pointing and attitude control of the spacecraft, the geometric quality of the LANDSAT-4 MSS data appears much improved over that of LANDSATS -1, -2 and -3.

Welch, R.↗

NASA NTRS1982

Advances in series resonant inverter technology and its effect on spacecraft employing electric propulsion

The efficiency of transistorized Series Resonant Inverters (SRIs), which is higher than that of silicon-controlled rectifier alternatives, reduces spacecraft radiator requirements by 40% and may eliminate the need for heat pipes on 30-cm ion thruster systems. Recently developed 10- and 25-kW inverters have potential applications in gas thrusters, and represent the first spaceborne SRI designs for such power levels. Attention is given to the design and control system approaches employed in these inverter designs to improve efficiency and reduce weight, along with the impact of such improved parameters on electric propulsion systems.

Robson, R. R.↗

NASA NTRS1982

Polycrystalline silicon availability for photovoltaic and semiconductor industries

Markets, applications, and production techniques for Siemens process-produced polycrystalline silicon are surveyed. It is noted that as of 1982 a total of six Si materials suppliers were servicing a worldwide total of over 1000 manufacturers of Si-based devices. Besides solar cells, the Si wafers are employed for thyristors, rectifiers, bipolar power transistors, and discrete components for control systems. An estimated 3890 metric tons of semiconductor-grade polycrystalline Si will be used in 1982, and 6200 metric tons by 1985. Although the amount is expected to nearly triple between 1982-89, research is being carried out on the formation of thin films and ribbons for solar cells, thereby eliminating the waste produced in slicing Czolchralski-grown crystals. The free-world Si production in 1982 is estimated to be 3050 metric tons. Various new technologies for the formation of polycrystalline Si at lower costs and with less waste are considered. New entries into the industrial Si formation field are projected to produce a 2000 metric ton excess by 1988.

Ferber, R. R.↗

NASA NTRS1983

Geometric rectification of radar imagery using digital elevation models

Geologic analysis of radar imagery requires accurate spatial rectification to allow rock type discrimination and meaningful exploitation of multisensor data files. A procedure is described which removes distortions produced by most sources including the heretofore elusive problem of terrain induced effects. Rectified imagery is presented which displays geologic features not apparent in the distorted data.

Naraghi, M.↗

NASA NTRS1983

MM Herculis - An eclipsing binary of the RS CVn

V, B and U differential photoelectric photometry has been obtained for the RS Canum Venaticorum-class eclipsing binary star MM Her, with the light outside the eclipse being Fourier-analyzed to study wave migration and amplitude. These, together with the mean light level of the system, have been monitored from 1976 through 1980. Observations within the eclipse have revealed eclipses to be partial, rather than total as previously thought. The geometric elements of the presently rectified light curve are forced on the pre-1980 light curves and found to be compatible. With these elements, and previously obtained double line radial velocity curves, new absolute dimensions of 1.18 solar masses and 1.58 solar radii are calculated for the hotter star and 1.27 solar masses and 2.83 solar radii for the cooler star. The plotting of color indices on the color-color curve indicates G2V and K2IV spectral types.

Sowell, J. R.↗

NASA NTRS1982

Geometric registration and rectification of spaceborne SAR imagery

This paper describes the development of automated location and geometric rectification techniques for digitally processed synthetic aperture radar (SAR) imagery. A software package has been developed that is capable of determining the absolute location of an image pixel to within 60 m using only the spacecraft ephemeris data and the characteristics of the SAR data collection and processing system. Based on this location capability algorithms have been developed that geometrically rectify the imagery, register it to a common coordinate system and mosaic multiple frames to form extended digital SAR maps. These algorithms have been optimized using parallel processing techniques to minimize the operating time. Test results are given using Seasat SAR data.

Curlander, J. C.↗

NASA NTRS1983

Space shuttle orbiter leading-edge flight performance compared to design goals

Thermo-structural performance of the Space Shuttle orbiter Columbia's leading-edge structural subsystem for the first five (5) flights is compared with the design goals. Lessons learned from thse initial flights of the first reusable manned spacecraft are discussed in order to assess design maturity, deficiencies, and modifications required to rectify the design deficiencies. Flight data and post-flight inspections support the conclusion that the leading-edge structural subsystem hardware performance was outstanding for the initial five (5) flights.

Curry, D. M.↗

NASA NTRS1983

Development and fabrication of a high current, fast recovery power diode

A high voltage (VR = 1200 V), high current (IF = 150 A), fast recovery ( 700 ns) and low forward voltage drop ( 1.5 V) silicon rectifier was designed and the process developed for its fabrication. For maximum purity, uniformity and material characteristic stability, neutron transmutation n-type doped float zone silicon is used. The design features a hexagonal chip for maximum area utilization of space available in the DO-8 diode package, PIN diffused junction structure with deep diffused D(+) anode and a shallow high concentration n(+) cathode. With the high temperature glass passivated positive bevel mesa junction termination, the achieved blocking voltage is close to the theoretical limit of the starting material. Gold diffusion is used to control the lifetime and the resulting effect on switching speed and forward voltage tradeoff. For solder reflow assembly, trimetal (Al-Ti-Ni) contacts are used. The required major device electrical characteristics were achieved. Due to the tradeoff nature of forward voltage drop and reverse recovery time, a compromise was reached for these values.

Berman, A. H.↗

NASA NTRS1983

LANDSAT-4 sensor performance

Preflight and in-orbit sensor and data measurements indicate that TM meets or exceeds most specifications. Measured spectral band edges meet instrument specifications in 12 out of 14 cases; there is ample dynamic range. The signal-to-noise ratio exceeds specifications, except for band 3, channel 4; and band 7 channel 7 is very noisy but still meets specifications. The modulation transfer function of channel 4, band 2, is smaller than specified. Registration errors between the primary focal plane (PFP) and the cold focal plane (CFP) are about 0.75 pixels along-scan and 0.2 pixels across scan. Forward and reverse scan discontinuities, are well within ground-processing capabilities to rectify. Instrument gain variability, up to 7% for band 5, requires use of the internal calibration (IC) system to assure radiometric accuracy. Preliminary applications evaluation of image contents indicates that TM provides much better definition of edges than MSS.

Barker, J. L.↗

NASA NTRS1984

Magnetron Sputtered Gold Contacts on N-gaas

Direct current planar magnetron sputtering was used to deposit gold Schottky barrier electrical contacts on n-type GaAs of varying doping densities. The electrical character of the contact was determined from current voltage and electron beam induced voltage data. Without reducing the surface concentration of carbon and oxide, the contacts were found to be rectifying. There is evidence that energetic neutral particles reflected from the magnetron target strike the GaAs and cause interfacial damage similar to that observed for ion sputtering. Particle irradiation of the surface during contact deposition is discussed.

Buonaquisti, A. D.↗

NASA NTRS1984

Effect of Ion Sputtering on Interface Chemistry and Electrical Properties of an Gaas (100) Schottky Contacts

Auger and electron photoelectron spectroscopy were used to measure the extent of As depletion during 1 keV to 5 keV argon sputtering of GaAs surfaces. This depletion was correlated with a general decrease in the barrier height of the rectifying Au contact deposited in situ. However, nondestructive angle resolved XPS measurements showed As was depleted at the outer surface more by 1 keV than 3 keV argon. These effects are explained based on a combined work effective work function model and creation of a donor like surface damage layer. The donor layer was correlated with As depletion by sputtering. Deep level trap formation and annealing of sputtering effects were studied.

Wang, Y. X.↗

NASA NTRS1984

Geometric Accuracy of LANDSAT-4 MSS Image Data

Analyses of the LANDSAT-4 MSS image data of North Georgia provided by the EDC in CTT-p formats reveal that errors of approximately + or - 30 m in the raw data can be reduced to about + or - 55 m based on rectification procedures involving the use of 20 to 30 well-distributed GCPs and 2nd or 3rd degree polynomial equations. Higher order polynomials do not appear to improve the rectification accuracy. A subscene area of 256 by 256 pixels was rectified with a 1st degree polynomial to yield an RMSE sub xy value of + or - 40 m, indicating that USGS 1:24,000 scale quadrangle-sized areas of LANDSAT-4 data can be fitted to a map base with relatively few control points and simple equations. The errors in the rectification process are caused by the spatial resolution of the MSS data, by errors in the maps and GCP digitizing process, and by displacements caused by terrain relief. Overall, due to the improved pointing and attitude control of the spacecraft, the geometric quality of the LANDSAT-4 MSS data appears much improved over that of LANDSAT-1, -2 AND -3.

Welch, R.↗

NASA NTRS1984

A Battery Charger and State of Charge Indicator

A battery charger which has a full wave rectifier in series with a transformer isolated 20 kHz dc-dc converter with high frequency switches, which are programmed to actively shape the input dc line current to be a mirror image of the ac line voltage is discussed. The power circuit operates at 2 kW peak and 1 kW average power. The BC/SCI has two major subsystems: (1) the battery charger power electronics with its controls; and (2) a microcomputer subsystem which is used to acquire battery terminal data and exercise the state of charge software programs. The state of charge definition employed is the energy remaining in the battery when extracted at a 10 kW rate divided by the energy capacity of a fully charged new battery. The battery charger circuit is an isolated boost converter operating at an internal frequency of 20 kHz. The switches selected for the battery charger are the single most important item in determining its efficiency. The combination of voltage and current requirements dictate the use of high power NPN Darlington switching transistors. The power circuit topology is a three switch design which utilizes a power FET on the center tap of the isolation transformer and the power Darlingtons on each of the two ends. An analog control system is employed to accomplish active input current waveshaping as well as the necessary regulation.

Latos, T. S.↗

NASA NTRS1984

Measurement of vacuum space potential by an emissive probe

The use of an electron-emitting probe (Langmuir and Compton, 1931) to measure the space potential in the vacuum between parallel metal plates is demonstrated, extending the inflection-point interpretation technique of Smith et al. (1979) to the vacuum case. Measurements are made at the off half cycle of during half-wave-rectified sine-wave heating of 3-mm-long 30-micron-diameter W probes positioned with 1-mm precision between 18 x 23-cm Al or Cu plates 7.6 cm apart. The results are presented graphically: potentials of up to + or 30 V are measured with accuracy + or - 0.4 V.

Cho, M. H.↗

NASA NTRS1984

Landsat-4 sensor performance

Preflight and in-orbit sensor and data measurements indicate that TM meets or exceeds most specifications. Measured spectral band edges meet instrument specifications in 12 out of 14 cases; there is ample dynamic range. The signal-to-noise ratio exceeds specifications, except for band 3, channel 4; and band 7 channel 7 is very noisy but still meets specifications. The modulation transfer function of channel 4, band 2, is smaller than specified. Registration errors between the primary focal plane (PFP) and the cold focal plane (CFP) are about 0.75 pixels along-scan and 0.2 pixels across scan. Forward and reverse scan discontinuities are well within ground-processing capabilities to rectify. Instrument gain variability, up to 7 percent for band 5, requires use of the internal calibration (IC) system to assure radiometric accuracy. Preliminary applications evaluation of image contents indicates that TM provides much better definition of edges than MSS.

Barker, J. L.↗

NASA NTRS1985

Commutating Permanent-Magnet Motors At Low Speed

Circuit provides forced commutation during starting. Forced commutation circuit diverts current from inverter SCR's and turns SCR's off during commutation intervals. Silicon controlled rectifier in circuit unnecessary when switch S10 replaced by high-current, high-voltage transistor. At present, high-current, low-voltage device must suffice.

Dolland, C.↗

NASA NTRS1984

An Assessment of Integrated Flywheel System Technology

The current state of the technology in flywheel storage systems and ancillary components, the technology in light of future requirements, and technology development needs to rectify these shortfalls were identified. Technology efforts conducted in Europe and in the United States were reviewed. Results of developments in composite material rotors, magnetic suspension systems, motor/generators and electronics, and system dynamics and control were presented. The technology issues for the various disciplines and technology enhancement scenarios are discussed. A summary of the workshop, and conclusions and recommendations are presented.

Keckler, C. R.↗

NASA NTRS1985

High voltage power supply

A high voltage power supply is formed by three discrete circuits energized by a battery to provide a plurality of concurrent output signals floating at a high output voltage on the order of several tens of kilovolts. In the first two circuits, the regulator stages are pulse width modulated and include adjustable ressistances for varying the duty cycles of pulse trains provided to corresponding oscillator stages while the third regulator stage includes an adjustable resistance for varying the amplitude of a steady signal provided to a third oscillator stage. In the first circuit, the oscillator, formed by a constant current drive network and a tuned resonant network included a step up transformer, is coupled to a second step up transformer which, in turn, supplies an amplified sinusoidal signal to a parallel pair of complementary poled rectifying, voltage multiplier stages to generate the high output voltage.

Ruitberg, A. P.↗