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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Impact of Indium Chloride Treatment on the Properties of CuInSe 2 Thin Films

Copper Indium diselenide (CIS) semiconductor thin films were deposited by single-stage process. Following the deposition, annealing and recrystallization of CIS was carried out in the presence of InCl 3 at different temperatures. Increase in grain size was observed by SEM in all cases. Increase in peak intensity was observed by XRD after treatment, correlating well with the SEM results. Measurements of the composition by both XRF and EDS indicate significant changes, notably a decrease in copper content. Here, this will likely be an issue for device performance and will need to be addressed.

14 SOLAR ENERGY↗
DOE OSTI2022

Effect of Metal Halides Treatment on High Throughput Low Temperature CIGS Solar Cells

Copper indium gallium diselenide (CIGS) semiconductor thin films were deposited at high rate and low temperature using single-stage thermal co-evaporation process on molybdenum back contact. A post deposition treatment was done by flashing AgBr at 350 ºC to induce recrystallization. Changes in morphology were confirmed by SEM, with an observed increase in grain size, as well as by XRD measurements, with a decrease in FWHM. Device results show an improvement of the performance after the AgBr vapor treatment, as all the photovoltaic parameters enhanced. Altogether, AgBr seems to be a suitable transport agent and beneficial for device fabrication.

14 SOLAR ENERGY↗
DOE OSTI2022

Post-deposition Metal Halide Treatment of CuGaSe 2 for Photovoltaic Application

Copper gallium diselenide (CGS) semiconductor thin films were deposited by three-stage thermal co-evaporation process. Post-deposition treatments and recrystallization were performed at various AgBr doses of 40 mg, 60 mg, and 80 mg after the 2 nd stage. The changes in surface morphology were confirmed by SEM. The electrical properties were also modified, as the resistivity of the film decreases with increasing doses. Here, the device performance after the treatment did not change as expected, as the overall device performance only slightly increases in the case of 60 mg of AgBr. Substantial changes in the fabrication process will therefore be required for better device results.

14 SOLAR ENERGY↗
DOE OSTI2021

Shear-based deformation processing of age-hardened aluminum alloy for single-step sheet production

Shear-based deformation processing by hybrid cutting-extrusion and free machining are used to make continuous strip, of thickness up to one millimeter, from low-workability AA6013-T6 in a single deformation step. The intense shear can impose effective strains as large as 2 in the strip without pre-heating of the workpiece. The creation of strip in a single step is facilitated by three factors inherent to the cutting deformation zone: highly confined shear deformation, in situ plastic deformation-induced heating and high hydrostatic pressure. The hybrid cutting-extrusion, which employs a second die located across from the primary cutting tool to constrain the chip geometry, is found to produce strip with smooth surfaces (S a < 0.4 μm) that is similar to cold-rolled strip. The strips show an elongated grain microstructure that is inclined to the strip surfaces – a shear texture – that is quite different from rolled sheet. Furthermore, this shear texture (inclination) angle is determined by the deformation path. Through control of the deformation parameters such as strain and temperature, a range of microstructures and strengths could be achieved in the strip. When the cutting-based deformation was done at room temperature, without workpiece pre-heating, the starting T6 material was further strengthened by as much as 30% in a single step. In elevated-temperature cutting-extrusion, dynamic recrystallization was observed, resulting in a refined grain size in the strip. Implications for deformation processing of age-hardenable Al alloys into sheet form, and microstructure control therein, are discussed.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Additive Friction Stir Deposition of a Tantalum–Tungsten Refractory Alloy

Additive friction stir deposition (AFSD) is a solid-state metal additive manufacturing technique, which utilizes frictional heating and plastic deformation to create large deposits and parts. Much like its cousin processes, friction stir welding and friction stir processing, AFSD has seen the most compatibility and use with lower-temperature metals, such as aluminum; however, there is growing interest in higher-temperature materials, such as titanium and steel alloys. In this work, we explore the deposition of an ultrahigh-temperature refractory material, specifically, a tantalum–tungsten (TaW) alloy. The solid-state nature of AFSD means refractory process temperatures are significantly lower than those for melt-based additive manufacturing techniques; however, they still pose difficult challenges, especially in regards to AFSD tooling. In this study, we perform initial deposition trials of TaW using twin-rod-style AFSD with a high-temperature tungsten–rhenium-based tool. Many challenges arise because of the high temperatures of the process and high mechanical demand on AFSD machine hardware to process the strong refractory alloy. Despite these challenges, successful deposits of the material were produced and characterized. Mechanical testing of the deposited material shows improved yield strength over that of the annealed reference material, and this strengthening is mostly attributed to the refined recrystallized microstructure typical of AFSD. These findings highlight the opportunities and challenges associated with ultrahigh-temperature AFSD, as well as provide some of the first published insights into twin-rod-style AFSD process behaviors.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Achieving High Strength and Creep Resistance in Inconel 740H Superalloy through Wire-Arc Additive Manufacturing and Thermodynamic-Guided Heat Treatment

Inconel 740H superalloy is commonly used in advanced ultra-supercritical power plants since it possesses excellent strength and creep resistance. This study investigates the microstructure and mechanical properties of Inconel 740H superalloy fabricated using wire-arc additive manufacturing. The as-printed microstructure consisted of columnar γ grains with the Laves phase and (Nb, Ti)C carbides as secondary phases. The anisotropy in grain structure increased from the bottom to the top regions, while the hardness was highest in the middle portion of the build. To guide the post-heat treatment design, thermodynamic and kinetic simulations were employed to predict the temperature and time. Complete recrystallization with the Laves phase dissolution occurred throughout the build after homogenization at 1200 °C for 2 h. The peak hardness was achieved after aging at 760 °C for 12 h with the M 23 C 6 carbides decorating the grain boundaries and γ’ precipitates in the grain interior. The yield strength (655 MPa) and ductility (29.5%) in the post-heat treated condition exceeded the design targets (620 MPa, 20%). Stress rupture tests at 750 °C showed that the high-temperature performance was at par with the wrought counterparts. The fracture mode after rupture was identified to be intergranular with the presence of grain boundary cavities along with grain boundary sliding.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Effects of ZrN Coating and Heat Treatment on U-Mo Dispersion Fuel under Irradiation

The stability of U-Mo fuel particles in Al matrix can be improved using ZrN coating and heat treatment. This study investigated irradiation behaviors of fuel plates containing U-Mo fuel particles fabricated with different conditions including heat treatment and the thickness of ZrN coating. Additionally, different fission densities were applied to each fuel plate to understand how varying fission densities affect its irradiation behaviors. This study showed that more recrystallization of grains and development of high burnup structure (HBS) occurred in irradiated fuel particles with higher fission densities. Heat treatment reduced the accumulation of fission gas bubbles in the fuel particles by coarsening their grains. The fuel particles with a ZrN coating thickness of 1.2-1.8 µm showed less significant development of U-Mo/Al interaction layers than the particles with a coating thickness of 0.5 µm after irradiation. This might indicate the existence of a critical thickness of ZrN coating to minimize the formation of the interaction layers. Fission gas bubbles were observed at grain boundaries of irradiated U-Mo fuel particles at low fission densities, and the formation of dendritic features with a darker contrast was identified in backscattered electron images. These features stemmed from grain boundaries with fission gas bubbles or HBS, and some of them contained the bubbles, indicating that they might represent an early stage of HBS propagation in the fuel particles.

11 - NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2020

Unraveling the Crystallization Kinetics of 2D Perovskites with Sandwich-Type Structure for High-Performance Photovoltaics

2D perovskite solar cells with high stability and high efficiency have attracted significant attention. A systematical static and dynamic structure investigation is carried out to show the details of 2D morphology evolution. A dual additive approach is used, where the synergy between an alkali metal cation and a polar solvent leads to high-quality 2D perovskite films with sandwich-type structures and vertical phase segregation. Such novel structure can induce high-quality 2D slab growth and reduce internal and surface defects, resulting in a high device efficiency of 16.48% with enhanced continuous illumination stability and improved moisture (55-60%) and thermal (85°C) tolerances. Transient absorption spectra reveal the carrier migration from low n to high n species with different kinetics. An [PbI 6 ] 4- octagon coalescence transformation mechanism coupled with metal and organic cations wrapped is proposed. By solvent vapor annealing, a recrystallization and reorientation of the 2D perovskite slabs occurs to form an ideal structure with improved device performance and stability.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Phase‐Change‐Memory Process at the Limit: A Proposal for Utilizing Monolayer Sb 2 Te 3

Abstract One central task of developing nonvolatile phase change memory (PCM) is to improve its scalability for high‐density data integration. In this work, by first‐principles molecular dynamics, to date the thinnest PCM material possible (0.8 nm), namely, a monolayer Sb 2 Te 3 , is proposed. Importantly, its SET (crystallization) process is a fast one‐step transition from amorphous to hexagonal phase without the usual intermediate cubic phase. An increased spatial localization of electrons due to geometrical confinement is found to be beneficial for keeping the data nonvolatile in the amorphous phase at the 2D limit. The substrate and superstrate can be utilized to control the phase change behavior: e.g., with passivated SiO 2 (001) surfaces or hexagonal Boron Nitride, the monolayer Sb 2 Te 3 can reach SET recrystallization in 0.54 ns or even as fast as 0.12 ns, but with unpassivated SiO 2 (001), this would not be possible. Besides, working with small volume PCM materials is also a natural way to lower power consumption. Therefore, the proposed PCM working process at the 2D limit will be an important potential strategy of scaling the current PCM materials for ultrahigh‐density data storage.

2D limit↗
DOE OSTI2021

Visualization of Solid-State Synthesis for Chalcogenide Na Superionic Conductors by in-situ Neutron Diffraction

Chalcogenide superionic sodium (Na) conductors are great potential as solid electrolytes (SEs) in all-solid-state Na batteries with advantages of high energy density and safety, and cost effectiveness. For solid Na-ion conductors, their crystal structures and ionically conductive properties are strongly influenced by the synthetic approaches and processing parameters. Thus, understanding the synthesis process is essential to control the structures and phases and thereby yields to Na-ion conductors with desirable properties. Thanks to the high-flux and deep-penetrating time-of-flight neutron diffraction (ND), we employed in situ experiments to track real-time structural changes of two chalcogenide SEs (Na 3 SbS 4 and Na 3 SbS 3.5 Se 0.5 ) during the solid-state synthesis. For these two conductors, the ND results reveal a fast one-step reaction for the synthesis and the molten process when heating up, and the recrystallization as well as the cubic-to-tetragonal phase transition up on cooling. Moreover, Se-doping is found to influence the reaction temperatures, lattice parameter and structure stability based on neutron experimental observations and theoretical simulation. This work presents a detailed structural study using in situ neutron diffraction technology for the solid synthesis process of chalcogenide Na-ion conductors, beneficial for the design and synthesis of new solid-state conductors.

25 ENERGY STORAGE↗
DOE OSTI2023

Pulsed Laser Annealed Ga Hyperdoped Poly‐Si / SiO x Passivating Contacts for High‐Efficiency Monocrystalline Si Solar Cells

Polycrystalline Si ( poly ‐Si)‐based passivating contacts are promising candidates for high‐efficiency crystalline Si solar cells. We show that nanosecond‐scale pulsed laser melting (PLM) is an industrially viable technique to fabricate such contacts with precisely controlled dopant concentration profiles that exceed the solid solubility limit. We demonstrate that conventionally doped, hole‐selective poly ‐Si/SiO x contacts that provide poor surface passivation of c ‐Si can be replaced with Ga‐ or B‐doped contacts based on non‐equilibrium doping. We overcome the solid solubility limit for both dopants in poly ‐Si by rapid cooling and recrystallization over a timescale of ∼25 ns. We show an active Ga dopant concentration of ∼3 × 10 20 cm −3 in poly ‐Si which is six times higher than its solubility limit in c ‐Si, and a B dopant concentration as high as ∼10 21 cm −3 . We measure an implied open‐circuit voltage of 735 mV for Ga‐doped poly ‐Si/SiO x contacts on Czochralski Si with a low contact resistivity of 35.5 ± 2.4 mΩ cm 2 . Scanning spreading resistance microscopy and Kelvin probe force microscopy show large diffusion and drift current in the p ‐ n junction that contributes to the low contact resistivity. Our results suggest that PLM can be extended for hyperdoping of other semiconductors with low solubility atoms to enable high‐efficiency devices.

14 SOLAR ENERGY↗
DOE OSTI2021

A duality-based coupling of Cosserat crystal plasticity and phase field theories for modeling grain refinement

High-rate deformation processes of metals entail intense grain refinement and special attention needs to be paid to capture the evolution of microstructure. In this article, a new formulation for coupling Cosserat crystal plasticity and phase field is developed. A common approach is to penalize kinematic incompatibility between lattice orientation and displacement-based elastic rotation. However, this can lead to significant solution sensitivity to the penalty parameter, resulting in low accuracy and convergence rates. To address these issues, a duality-based formulation is developed which directly imposes the rotational kinematic compatibility. A weak inf-sup-based skew-symmetric stress projection is introduced to suppress instabilities present in the dual formulation. An additional least squares stabilization is introduced to suppress the spurious lattice rotation with a suitable parameter range derived analytically and validated numerically. The required high-order continuity is attained by the reproducing kernel approximation. It is observed that equal order displacement-rotation-phase field approximations are stable, which allows efficient employment of the same set of shape functions for all independent variables. The proposed formulation is shown to yield superior accuracy and convergence with marginal parameter sensitivity compared to the penalty-based approach and successfully captures the dominant rotational recrystallization mechanism including block dislocation structures and grain boundary migration.

42 ENGINEERING↗
DOE OSTI2021

Morphology, microstructure, and doping behaviour: A comparison between different deposition methods for poly-Si/SiO x passivating contacts

In this work, we study how crystallographic structures, optoelectronic properties, and nanoscale surface morphologies of ex situ phosphorus-doped polycrystalline silicon (poly-Si)/SiO x passivating contacts, formed by different deposition methods (sputtering, plasma-enhanced chemical vapour deposition [PECVD], and low-pressure chemical vapour deposition [LPCVD]), are investigated and compared. Across all these deposition technologies, we noted the same trend: higher diffusion temperatures yield films that are more crystalline but that have rougher surface morphologies due to bigger surface crystal grains. Also, the recrystallization process of the as-deposited Si films starts from the SiO x interface, rather than from the film surface and bulk. However, there are some distinct differences among these technologies. First, the LPCVD method yields the lowest deposition rate, roughest surfaces, and smallest degree of crystallinity on finished poly-Si films. In contrast, the PECVD method has the highest deposition rate and smoothest surfaces for both as-deposited Si and annealed poly-Si films. Second, as-deposited sputtered and PECVD Si films contain only an amorphous phase, whereas as-deposited LPCVD films already has some crystalline phase. Third, the LPCVD phosphorus in-diffusion into the substrate depends strongly on the initial film thickness, whereas for the other two methods, it is weakly dependent on thickness. Finally, the passivation quality of every poly-Si film type has different responses to the film thickness and diffusion temperature, suggesting that the ex situ doping optimization should be performed independently.

14 SOLAR ENERGY↗