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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Phases of the hydrogen isotopes under pressure: metallic hydrogen

Hydrogen is the simplest molecule in nature. One of the key problems and challenges in condensed matter physics is to understand the phases, properties, and structure of hydrogen as a function of pressure and temperature. Over 80 years ago Wigner and Huntington predicted that if solid molecular hydrogen was sufficiently compressed, it would transform to an atomic metal. Later, a second pathway emerged; it was predicted that if heated to high temperatures under pressure it would transform to liquid atomic hydrogen; this form of metallic hydrogen makes up ~90% of the planet Jupiter. The prediction of high temperature superconductivity of solid atomic metallic hydrogen stimulated the experimental community to produce this material . For decades hydrogen defied the experimental efforts to transform it. Using diamond anvil cells, metallic hydrogen has recently been produced at a pressure of ~5 million atmospheres, significantly greater than the pressure at the center of the earth. Liquid atomic metallic hydrogen has been produced at temperatures of a few thousand degrees Kelvin in diamond anvil cells, as well as in dynamic experiments. We review the seemingly simple, but actually complex properties of this quantum solid and metal and the decades of development and progress to achieve this important fundamental result.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Nonequilibrium formulation of varying-temperature bit erasure

Landauer's principle states that erasing a bit of information at fixed temperature T costs at least $k$ B $T$ ln 2 units of work. Here we investigate erasure at varying temperature, to which Landauer's result does not apply. Here we formulate bit erasure as a stochastic nonequilibrium process involving a compression of configuration space, with physical and logical states associated in a symmetric way. Erasure starts and ends at temperature T, but temperature can otherwise vary with time in an arbitrary way. Defined in this way, erasure is governed by a set of nonequilibrium fluctuation relations that show that varying-temperature erasure can done with less work than $k$ B $T$ ln 2. As a result, erasure and the complementary process of bit randomization can be combined to form a work-producing engine cycle.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Energy Shifts and Broadening of Excitonic Resonances in Electrostatically Doped Semiconductors

Tuning the density of resident electrons or holes in semiconductors through electrostatic doping provides crucial insight into the composition of the many excitonic complexes that are routinely observed as absorption or photoluminescence resonances in optical studies. Moreover, we can change the way these resonances shift and broaden in energy by controlling the quantum numbers (e.g., spin and valley) of the resident carriers with applied magnetic fields and doping levels, as well as by selecting the quantum numbers of the photoexcited or recombining electron-hole (𝑒−ℎ) pair through optical polarization. Here, we discuss the roles of distinguishability and optimality of excitonic complexes, showing them to be key ingredients that determine the energy shifts and broadening of optical resonances in charge-tunable semiconductors. A distinguishable 𝑒−ℎ pair means that the electron and hole undergoing photoexcitation or recombination have quantum numbers that are not shared by any of the resident carriers. An optimal excitonic complex refers to a complex whose particles come with all available quantum numbers of the resident carriers. Based on the carrier density, magnetic field, and light polarization, all optical resonances may be classified as either distinct or indistinct depending on the distinguishability of the 𝑒−ℎ pair, and the underlying excitonic complex can be classified as either optimal or suboptimal. The universality of these classifications, inherited from the fundamental Pauli exclusion principle, allows us to understand how optical resonances shift in energy and whether they should broaden as doping is increased. This understanding is supported by conclusive evidence that the broadening and decay of optical resonances cannot be simply attributed to enhanced screening when resident carriers are added to a semiconductor. Finally, applying the classification scheme in either monolayer or moiré heterobilayer semiconductor systems, we relate the energy shift and amplitude of the neutral-exciton resonance to the compressibility of the resident carrier gas.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Te Vacancy‐Driven Anomalous Transport in ZrTe 5 and HfTe 5

Abstract The strongly sample‐dependent anomalous transport properties observed in the layered Dirac materials ZrTe 5 and HfTe 5 are known to strongly correlate with the presence of Te vacancies. One phenomenon, a negative longitudinal magnetoresistance (NLMR), is widely speculated to be a signature of broken chiral symmetry. However, the role of electronic structure in the sample dependence of the transport properties of these materials is poorly understood. This prompts the question as to whether the NLMR is a genuine signature of the chiral anomaly in ZrTe 5 and HfTe 5 . In this work, the effect of Te vacancies on the electronic structure of ZrTe 5 and HfTe 5 is investigated via first‐principles calculations. Te vacancies serve two purposes: modification of the cell volume via effective compressive strain and production of local changes to the electronic structure. The reorganization of the electronic structure near the Fermi energy indicates that Te vacancies can rationalize conflicting reports in spectroscopic and transport measurements that have remained elusive in prior first‐principles studies. These results show that Te vacancies contribute, in part, to the anomalous transport properties of ZrTe 5 and HfTe 5 but, critically, do not eliminate the possibility of a genuine manifestation of the chiral anomaly in these materials.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Straintronics with single-layer MoS 2 : A quantum Monte Carlo study

Using state-of-the-art quantum Monte Carlo (QMC) methods, we study straintronic properties of a single MoS 2 monolayer. 2D MoS 2 is a quintessential straintronic material for which many experiments have been performed. First, we determine the equilibrium atomic structure which is not known experimentally and is strictly needed to correctly determine the straintronic properties. That enables us to precisely analyze the quasiparticle band gaps for any applied biaxial strain, which we describe by a bivariate paraboloid function of lattice constant and internal structural parameter. Using the fixed-node QMC calculations fitted by analytical formulas, we localize the following excited state crossings between the direct, K → K , and indirect Γ → X and K → K /2 excitations. Based on this highly accurate many-body treatment, we predict a gauge factor of 136 meV/% for the K → K transition and a fairly narrow window of ≈ 2.8 % from compressive to mildly tensile strains, accounting for only ≈ 0.3 eV band gap change maintaining the direct character of the gap. Consequently, we suggest that, compared to other 2D materials, such as phosphorene, there is only a limited straintronic tuneability in this material often studied for its straintronic properties. QMC results are compared to results of standard DFT modeling, which reveal insights into the corresponding inaccuracies and therefore open a window for educated use of rapid DFT approaches. Published by the American Physical Society 2024

Huang, Y.↗
DOE OSTI2024

GeSn-on-GaAs with photoconductive carrier lifetime >400 ns: role of substrate orientation and atomistic simulation

Group IV GeSn quantum material finds application in electronics and silicon-compatible photonics. Synthesizing these materials with low defect density and high carrier lifetime is a potential challenge due to lattice mismatch induced defects and tin segregation at higher growth temperature. Recent advancements in the growth of these GeSn materials on Si, Ge, GaAs, and with substrate orientations, demonstrated different properties using epitaxial and chemical deposition methods. This article addresses the effect of GaAs substrate orientation and misorientation on the materials’ properties and carrier lifetimes in epitaxial Ge 0.94 Sn 0.06 layers. With starting GaAs substrates of (100)/2°, (100)/6°, (110) and (111)A orientations, Ge 0.94 Sn 0.06 epitaxial layers were grown with an intermediate Ge buffer layer by molecular beam epitaxy and analyzed by several analytical tools. X-ray analysis displayed good crystalline quality, and Raman spectroscopy measurements showed blue shifts in phonon wavenumber due to biaxial compressive strain in Ge 0.94 Sn 0.06 epilayers. Cross-sectional transmission electron microscopy analysis confirmed the defect-free heterointerface of Ge 0.94 Sn 0.06 /Ge/GaAs heterostructure. Minority carrier lifetimes of the unintentionally doped n-type Ge 0.94 Sn 0.06 epilayers displayed photoconductive carrier lifetimes of >400 ns on (100)/6°, 319 ns on (100)/2°, and 434 ns on (110) GaAs substrate at 1500 nm excitation wavelength. On the other hand, Ge 0.94 Sn 0.06 layer showed poor carrier lifetime on (111)A GaAs substrate. The observed differences in carrier lifetimes were correlated with the formation energy of the Ge on (100)/6° and (100)/2° GaAs heterointerface using Stillinger–Weber interatomic potential model-based atomistic simulation with different heterointerfacial bonding by Synopsys QuantumATK tool. Total energy computation of 6280-atom Ge/GaAs supercell on (100)/6° leads to lower formation energy than (100)/2°, making it more thermodynamically stable. Hence, the growth of the GeSn/III–V material system using misoriented (100) substrates that are more thermodynamically stable will enhance the performances of optoelectronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Pressure-induced structural and dielectric changes in liquid water at room temperature

Understanding the pressure-dependent dielectric properties of water is crucial for a wide range of scientific and practical applications. In this study, we employ a deep neural network trained on density functional theory data to investigate the dielectric properties of liquid water at room temperature across a pressure range of 0.1–1000 MPa. We observe a nonlinear increase in the static dielectric constant ɛ 0 with increasing pressure, a trend that is qualitatively consistent with experimental observations. This increase in ɛ 0 is primarily attributed to the increase in water density under compression, which enhances collective dipole fluctuations within the hydrogen-bonding network as well as the dielectric response. Despite the increase in ɛ 0 , our results reveal a decrease in the Kirkwood correlation factor G K with increasing pressure. Furthermore, this decrease in G K is attributed to pressure-induced structural distortions in the hydrogen-bonding network, which weaken dipolar correlations by disrupting the ideal tetrahedral arrangement of water molecules.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Palladium at high pressure and high temperature: A combined experimental and theoretical study

Palladium is one of the most important technological materials, yet its phase diagram remains poorly understood. At ambient conditions, its solid phase is face-centered cubic (fcc). However, another solid phase of Pd, body-centered cubic (bcc), was very recently predicted in two independent theoretical studies to occur at high pressures and temperatures. In this work, we report an experimental study on the room-temperature equation of state (EOS) of Pd to a pressure of 80 GPa, as well as a theoretical study on the phase diagram of Pd including both fcc-Pd and bcc-Pd. Our theoretical approach consists in ab initio quantum molecular dynamics (QMD) simulations based on the Z methodology which combines both direct Z method for the simulation of melting curves and inverse Z method for the calculation of solid–solid phase transition boundaries. We obtain the melting curves of both fcc-Pd and bcc-Pd and an equation for the fcc–bcc solid–solid phase transition boundary as well as the thermal EOS of Pd which is in agreement with experimental data and QMD simulations. We uncover the presence of another solid phase of Pd on its phase diagram, namely, random hexagonal close-packed (rhcp), and estimate the location of the rhcp-bcc solid–solid phase transition boundary and the rhcp–fcc–bcc triple point. We also discuss the topological similarity of the phase diagrams of palladium and silver, the neighbor of Pd in the periodic table. We argue that Pd is a reliable standard for shock-compression studies and present the analytic model of its principal Hugoniot in a wide pressure range.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Palladium at high pressure and high temperature: A combined experimental and theoretical study

Palladium is one of the most important technological materials, yet its phase diagram remains poorly understood. At ambient conditions, its solid phase is face-centered cubic (fcc). However, another solid phase of Pd, body-centered cubic (bcc), was very recently predicted in two independent theoretical studies to occur at high pressures and temperatures. In this work, we report an experimental study on the room-temperature equation of state (EOS) of Pd to a pressure of 80 GPa, as well as a theoretical study on the phase diagram of Pd including both fcc-Pd and bcc-Pd. Our theoretical approach consists in ab initio quantum molecular dynamics (QMD) simulations based on the Z methodology which combines both direct Z method for the simulation of melting curves and inverse Z method for the calculation of solid–solid phase transition boundaries. We obtain the melting curves of both fcc-Pd and bcc-Pd and an equation for the fcc–bcc solid– solid phase transition boundary as well as the thermal EOS of Pd which is in agreement with experimental data and QMD simulations. We uncover the presence of another solid phase of Pd on its phase diagram, namely, random hexagonal close-packed (rhcp), and estimate the location of the rhcp-bcc solid–solid phase transition boundary and the rhcp–fcc–bcc triple point. We also discuss the topological similarity of the phase diagrams of palladium and silver, the neighbor of Pd in the periodic table. We argue that Pd is a reliable standard for shock-compression studies and present the analytic model of its principal Hugoniot in a wide pressure range.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Challenges of relaxed n -type GaP on Si and strategies to enable low threading dislocation density

We directly show that doping type strongly affects the threading dislocation density (TDD) of relaxed GaP on Si, with n-type GaP having a TDD of ~3.1 × 10 7 cm -2 , nearly 30× higher than both p-type and unintentionally doped GaP at ~1.1 × 10 6 cm -2 . Such a high TDD is undesirable since n-GaP on Si serves as the starting point for the growth of epitaxial III-V/Si multi-junction solar cells. After highlighting additional challenges for highly n-doped GaP on Si including increased surface roughness, anisotropic strain relaxation, and inhomogeneous TDD distributions from blocking of the dislocation glide, we go on to show that the TDD of n-GaP on Si rises by 10× as the doping concentration increases from ~5 × 10 16 to ~2 × 10 18 cm -3 . Next, we investigate the effects of additional dopant choices on the TDD, determining that electronic effects dominate over solute effects on the dislocation velocity at these concentrations. Finally, we demonstrate the respective roles of compressively strained superlattices, low-temperature initiation, and lowered n-type doping concentration on reducing the TDD for n-GaP on Si. By combining all three, we attain relaxed n-GaP on Si with a TDD of 1.54(±0.20) × 10 6 cm -2 , approaching parity with p-GaP on Si. Such high-quality n-GaP on Si will play an important role in boosting the efficiency of epitaxial III-V/Si multi-junction solar cells.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

SIERRA/Aero Theory Manual - Version 5.8

SIERRA/Aero is a compressible fluid dynamics program intended to solve a wide variety compressible fluid flows including transonic and hypersonic problems. This document describes the commands for assembling a fluid model for analysis with this module, henceforth referred to simply as Aero for brevity. Aero is an application developed using the SIERRA Toolkit (STK). The intent of STK is to provide a set of tools for handling common tasks that programmers encounter when developing a code for numerical simulation. For example, components of STK provide field allocation and management, and parallel input/output of field and mesh data. These services also allow the development of coupled mechanics analysis software for a massively parallel computing environment.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Ramp compression of tantalum to multiterapascal pressures: Constraints of the thermal equation of state to 2.3 TPa and 5000 K

We report measurements of the compressibility of ramp compressed tantalum to a final stress of 2.3 TPa corresponding to threefold volumetric compression. Using these data, we extended the experimental constraint on the Ta cold compression curve by an order of magnitude in pressure. Furthermore, by combining the resulting data with previous measurements of shock compression and ambient pressure heating, we construct an experimentally bounded and thermodynamically consistent equation of state model for Ta which has 2% uncertainty in pressure at 1 TPa. We therefore propose Ta as an in situ pressure scale for laser-heated static compression experiments which were recently able to reach terapascal pressures and thousands of degrees Kelvin. Our new equation of state of Ta is experimentally constrained at extreme pressures and temperatures relevant to a wide range of planetary interiors and will allow for more accurate comparison between experimental measurements and theory at extreme conditions.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2025

Renormalization of states and quasiparticles in many-body downfolding

We explore the principles of many-body Hamiltonian complexity reduction via downfolding on an effective low-dimensional representation. We show that the renormalization factor provides a unique measure of the quality of the compression as it directly represents the projection between the approximate stationary state of the many-body Hamiltonian and the full many-body wavefunction. Hence, the renormalization factor is a measure of fidelity between the effective (reduced-rank) description and the full many-body treatment for arbitrary (i.e., ground and excited) states. When the entire problem is mapped on a system of interacting quasiparticles [Romanova et al., npj Comput. Mater. 9, 126 (2023)], the effective Hamiltonians can faithfully reproduce the physics only when a clear energy scale separation exists between the subsystems and their environment. We also demonstrate that it is necessary to include quasiparticle renormalization at distinct energy scales, capturing the distinct interaction between subsystems and their surrounding environments. Numerical results from simple, exactly solvable models highlight the limitations and strengths of this approach, particularly for ground and low-lying excited states. This work lays the groundwork for applying dynamical downfolding techniques to problems concerned with (quantum) interfaces.

Green-functions technique↗
DOE OSTI2026

Pressure‐Induced Structural and Magnetic Evolution in Layered Antiferromagnet YbMn 2 Sb 2

Electronic states under pressure exhibit unconventional spin and charge dynamics that provide a powerful route to uncover exotic phases in quantum materials. Here, we present the structural, magnetic, and electronic evolution of YbMn 2 Sb 2 under pressure. Single-crystal X-ray diffraction reveals a pressure-induced structural transition from the space group trigonal P$\overline{3}$m1 to the monoclinic P2 1 /m phase near 3.5 GPa, which remains stable up to 10 GPa. Magnetization measurements display an anomalously weak net magnetic moment and the absence of Curie–Weiss behavior up to 400 K, suggesting the formation of short-range Mn moment pairs that cancel macroscopically and subsequently evolve into long-range order upon cooling. Temperature-dependent resistivity shows semiconducting behavior with a transition at ∼119 K at ambient pressure, while pressure induces a dramatic suppression of resistance and the emergence of metallic-like temperature dependence, stabilized beyond 5 GPa. This pressure-driven semiconductor-metal transition is consistent with our density functional theory calculations, confirming the closing of the band gap under compression. Neutron diffraction under pressure identifies an incommensurate magnetic structure with antiparallel correlations between paired spins. Together, these results demonstrate how pressure-driven structural tuning and competing exchange interactions stabilize unconventional magnetic states in this low-dimensional magnetic semiconductor.

antiferromagnetic semiconductor↗
DOE OSTI2021

Model-independent versus model-dependent interpretation of the SDSS-III BOSS power spectrum: Bridging the divide

The traditional clustering analyses of galaxy redshift surveys compress the clustering data into a set of late-time physical variables in a model-independent way. This approach has recently been extended by an additional shape variable encoding early-time physics information. Here we apply this new technique, ShapeFit, to SDSS-III BOSS data and show that it matches the constraining power of alternative, model-dependent approaches, which directly constrain the model’s parameters adopting a cosmological model ab initio. ShapeFit is ~30 times faster, model independent, naturally splits early- and late-time variables, and enables a better control of observational systematics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2020

Skyrmion fluctuations at a first-order phase transition boundary

Magnetic skyrmions are topologically protected spin textures with promising prospects for applications in data storage. They can form a lattice state due to competing magnetic interactions and are commonly found in a small region of the temperature—magnetic field phase diagram. Recent work has demonstrated that these magnetic quasi-particles fluctuate at the μeV energy scale. Here, we use a coherent x-ray correlation method at an x-ray free-electron laser to investigate these fluctuations in a magnetic phase coexistence region near a first-order transition boundary where fluctuations are not expected to play a major role. Surprisingly, we find that the relaxation of the intermediate scattering function at this transition differs significantly compared to that deep in the skyrmion lattice phase. The observation of a compressed exponential behavior suggests solid-like dynamics, often associated with jamming. We assign this behavior to disorder and the phase coexistence observed in a narrow field-window near the transition, which can cause fluctuations that lead to glassy behavior.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Planar, longitudinal, compressive waves in solids: Thermodynamics and uniaxial strain restrictions

A new tri-axial pressure-based constitutive expression has been found using Cauchy's stress tensor. This stress state emphasizes pressure and shear stress. The description is a pressure plus an effective shear stress allowing for a constitutive law based on atomic solid-state phase changes in crystalline cells due to pressure plus shear-based dislocation motion commonly associated with plasticity. Pressure has a new role in the material's constitutive response as it is separated from plasticity. The thermo-mechanical system describes third-order Gibbs’ expressions without specific volume restrictions placed upon the material. Isothermally, the ratio of heat to shear work in elastic copper is shown to approach zero at a very low temperature and become larger than one as temperature approaches melting. Wave compression models investigated are elastic and plastic: in fully elastic materials, the planar wave is restricted by Poisson's effect although plastic shear changes this constraint. Plastic deformation, dominated by dissipative shear stresses in uniaxial strain, heats the material while excluding phase changes from hydrostatic pressures. The material properties per se across Hugoniot shocks are described with entropy concepts. Shock waves are exceedingly complex since the constitutive laws are linked at extreme temperatures, pressures, and shear stresses. Isothermal, isentropic, isochoric, and iso-shear conditions are used throughout with Jacobian algebra.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗