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At least 289 records · Page 16

The Mineralogy of Circumstellar Silicates Preserved in Cometary Dust

Interplanetary dust particles (IDPs) contain a record of the building blocks of the solar system including presolar grains, molecular cloud material, and materials formed in the early solar nebula. Cometary IDPs have remained relatively unaltered since their accretion because of the lack of parent body thermal and aqueous alteration. We are using coordinated transmission electron microscope (TEM) and ion microprobe studies to establish the origins of the various components within cometary IDPs. Of particular interest is the nature and abundance of presolar silicates in these particles because astronomical observations suggest that crystalline and amorphous silicates are the dominant grain types produced in young main sequence stars and evolved O-rich stars. Five circumstellar grains have been identified including three amorphous silicate grains and two polycrystalline aggregates. All of these grains are between 0.2 and 0.5 micrometers in size. The isotopic compositions of all five presolar silicate grains fall within the range of presolar oxides and silicates, having large (17)O-enrichments and normal (18)O/(16)O ratios (Group 1 grains from AGB and RG stars). The amorphous silicates are chemically heterogeneous and contain nanophase FeNi metal and FeS grains in a Mg-silicate matrix. Two of the amorphous silicate grains are aggregates with subgrains showing variable Mg/Si ratios in chemical maps. The polycrystalline grains show annealed textures (equilibrium grains boundaries, uniform Mg/Fe ratios), and consist of 50-100 nm enstatite and pyrrhotite grains with lesser forsterite. One of the polycrystalline aggregates contains a subgrain of diopside. The polycrystalline aggregates form by subsolidus annealing of amorphous precursors. The bulk compositions of the five grains span a wide range in Mg/Si ratios from 0.4 to 1.2 (avg. 0.86). The average Fe/Si (0.40) and S/Si (0.21) ratios show a much narrower range of values and are approximately 50% of their solar abundances. The latter observation may indicate a decoupling of the silicate and sulfide components in grains that condense in stellar outflows. The amorphous silicate grains described here were not extensively affected by irradiation, sputtering, or thermal processing and may represent relatively pristine circumstellar grains. They are strong candidates for the "dirty silicates" in astronomical observations of circumstellar dust shells. The polycrystalline grains were originally amorphous silicate grains that were likely annealed in the early solar nebula but the processing was not sufficient to erase their anomalous oxygen isotopic compositions.

Keller, L. P.↗

X-ray measurements of stresses and defects in EFG and large grained polycrystalline silicon ribbons

The Bond method was employed to measure the lattice parameter in an area of 0.4 mm in diameter of EFG Si-ribbons to an accuracy of + or - 0.00008 A. A Bond goniometer was built which included a goniostat with a special specimen holder to mount ribbons 1 m in length and 75 mm in width which could be rotated about two orthogonal axes, and a Leitz microscope for precision alignment of a particular area into the center of the goniostat and the small primary X-ray beam. The (321) planes were found to be parallel to the surface of the ribbons with an angular spread of about 15 deg. The poles of the (111) planes clustered about an angle of 25 deg away from the surface normal, again with a spread of 10 deg. The lattice parameter of a small piece of ribbon material was found to be a sub o = 5.43075 A. A maximum stress of 115 MPa was observed in a fractured ribbon which corresponded to the fracture stress of single crystals of Si.

Wagner, C. N. J.↗

The mechanical properties of fluoride salts at elevated temperatures

The deformation behavior of CaF2 and LiF single crystals compressed in the 111 and the 100 line directions, respectively, are compared with the mechanical properties of polycrystalline LiF-22 (mol pct) CaF2 eutectic mixture in the temperature range 300 to 1275 K for strain rates varying between 7 x 10 to the -7th and 0.2/s. The true stress-strain curves for the single crystals were found to exhibit three stages in an intermediate range of temperatures and strain rates, whereas those for the eutectic showed negative work-hardening rates after a maximum stress. The true stress-strain rate data for CaF2 and LiF-22 CaF2 could be represented by a power-law relation with the strain rate sensitivities lying between 0.05 and 0.2 for both materials. A similar relation was found to be unsatisfactory in the case of LiF.

Raj, S. V.↗

Diagnostic Techniques Used to Study Chemical-Vapor-Deposited Diamond Films

The advantages and utility of chemical-vapor-deposited (CVD) diamond as an industrial ceramic can only be realized if the price and quality are right. Until recently, this technology was of interest only to the academic and basic research community. However, interest has grown because of advances made by leading CVD diamond suppliers: 1) Reduction of the cost of CVD polycrystalline diamond deposition below $5/carat ($8/sq cm); 2) Installation of production capacity; 3) Epitaxial growth of CVD single-crystal diamond. Thus, CVD diamond applications and business are an industrial reality. At present, CVD diamond is produced in the form of coatings or wafers. CVD diamond film technology offers a broader technological potential than do natural and high-pressure synthetic diamonds because size, geometry, and eventually cost will not be as limiting. Now that they are cost effective, diamond coatings - with their extreme properties - can be used in a variety of applications. Diamond coatings can improve many of the surface properties of engineering substrate materials, including erosion, corrosion, and wear resistance. Examples of actual and potential applications, from microelectromechanical systems to the wear parts of diamond coatings and related superhard coatings are described. For example, diamond coatings can be used as a chemical and mechanical barrier for the space shuttles check valves, particularly on the guide pins and seat assemblies.

Miyoshi, Kazuhisa↗

Anisotropic Laminar Piezocomposite Actuator Incorporating Machined PMN-PT Single Crystal Fibers

The design, fabrication, and testing of a flexible, laminar, anisotropic piezoelectric composite actuator utilizing machined PMN-32%PT single crystal fibers is presented. The device consists of a layer of rectangular single crystal piezoelectric fibers in an epoxy matrix, packaged between interdigitated electrode polyimide films. Quasistatic free-strain measurements of the single crystal device are compared with measurements from geometrically identical specimens incorporating polycrystalline PZT-5A and PZT-5H piezoceramic fibers. Free-strain actuation of the single crystal actuator at low bipolar electric fields (+/- 250 V/mm) is approximately 400% greater than that of the baseline PZT-5A piezoceramic device, and 200% greater than that of the PZT-5H device. Free-strain actuation under high unipolar electric fields (0-4kV/mm) is approximately 200% of the PZT-5A baseline device, and 150% of the PZT-5H alternate piezoceramic device. Performance increases at low field are qualitatively consistent with predicted increases based on scaling the low-field d33 piezoelectric constants of the respective piezoelectric materials. High-field increases are much less than scaled d33 estimates, but appear consistent with high-field freestrain measurements reported for similar bulk single-crystal and piezoceramic compositions. Measurements of single crystal actuator capacitance and coupling coefficient are also provided. These properties were poorly predicted using scaled bulk material dielectric and coupling coefficient data. Rules-of-mixtures calculations of the effective elastic properties of the single crystal device and estimated actuation work energy densities are also presented. Results indicate longitudinal stiffnesses significantly lower (50% less) than either piezoceramic device. This suggests that single-crystal piezocomposite actuators will be best suited to low induced-stress, high strain and deflection applications.

Wilkie, W. Keats↗

Effect of localized polycrystalline silicon properties on solar cell performance

Several forms of polycrystalline silicon, mostly from cast ingots, (including UCP, SILSO and HEM) were studied. On typical slices, localized properties were studied in two ways. Small area (about 2.5 sq mm) mesa diodes were formed, and localized photovoltaic properties were measured. Also a small area (about .015 sq mm) light spot was scanned across the cells; the light spot response was calibrated to measure local diffusion length directly. Using these methods, the effects of grain boundaries, or of intragrain imperfections were correlated with cell performance. Except for the fine grain portion of SILSO, grain boundaries played only a secondary role in determining cell performance. The major factor was intra-grain material quality and it varied with position in ingots and probably related to solidification procedure.

Leung, D.↗

Anisotropic Piezocomposite Actuator Incorporating Machined PMN-PT Single Crystal Fibers

The design, fabrication, and testing of a flexible, planar, anisotropic piezoelectric composite actuator utilizing machined PMN-32%PT single crystal fibers is presented. The device consists of a layer of rectangular single crystal piezoelectric fibers in an epoxy matrix, packaged between interdigitated electrode polyimide films. Quasistatic free-strain measurements of the single crystal device are compared with measurements from geometrically identical specimens incorporating polycrystalline PZT-5A and PZT-5H piezoceramic fibers. Free-strain actuation of the single crystal actuator at low bipolar electric fields (+/- 250 V/mm) is approximately 400% greater than that of the baseline PZT-5A piezoceramic device, and 200% greater than that of the PZT-5H device. Free-strain actuation under high unipolar electric fields (0-4kV/mm) is approximately 200% of the PZT-5A baseline device, and 150% of the PZT-5H alternate piezoceramic device. Performance increases at low field are qualitatively consistent with predicted increases based on scaling the low-field d(sub 33) piezoelectric constants of the respective piezoelectric materials. High-field increases are much less than scaled d(sub 33) estimates, but appear consistent with high-field freestrain measurements reported for similar bulk single-crystal and piezoceramic compositions. Measurements of single crystal actuator capacitance and coupling coefficient are also provided. These properties were poorly predicted using scaled bulk material dielectric and coupling coefficient data. Rules-of-mixtures calculations of the effective elastic properties of the single crystal device and estimated actuation work energy densities are also presented. Results indicate longitudinal stiffnesses significantly lower (50% less) than either piezoceramic device. This suggests that single-crystal piezocomposite actuators will be best suited to low induced-stress, high strain and deflection applications.

Wilkie, W. Keats↗

Melt migration in a silicate liquid-olivine system - An experimental test of compaction theory

An experimentally derived melt migration profile is compared with those obtained from compaction theory. A couple is prepared in which a source-for-melt (a disk composed of a silicate glass and olivine) was placed in contact with a sink-for-melt (a disk of polycrystalline olivine) in order to induce melt migration under laboratory conditions. It is noted that melt infiltrates into the sink disk along triple junctions driven by capillary forces. In order to analyze the melt migration profile in terms of compaction theory, the equations developed by McKenzie (1984) to describe porous flow of a liquid in a deformable matrix were modified. The bouyancy force term is replaced with a capillary force term and governing equations are then solved numerically with the initial boundary conditions specified by the experimental design. Also, it is determined that compaction theory provides a good description of the experimental results provided that the permeability of these solid-liquid materials increases linearly with increasing liquid fraction.

Riley, G. N., Jr.↗

Diamond Coatings

Advances in materials technology have demonstrated that it is possible to get the advantages of diamond in a number of applications without the cost penalty, by coating and chemically bonding an inexpensive substrate with a thin film of diamond-like carbon (DLC). Diamond films offer tremendous technical and economic potential in such advances as chemically inert protective coatings; machine tools and parts capable of resisting wear 10 times longer; ball bearings and metal cutting tools; a broad variety of optical instruments and systems; and consumer products. Among the American companies engaged in DLC commercialization is Diamonex, Inc., a diamond coating spinoff of Air Products and Chemicals, Inc. Along with its own proprietary technology for both polycrystalline diamond and DLC coatings, Diamonex is using, under an exclusive license, NASA technology for depositing DLC on a substrate. Diamonex is developing, and offering commercially, under the trade name Diamond Aegis, a line of polycrystalline diamond-coated products that can be custom tailored for optical, electronic and engineering applications. Diamonex's initial focus is on optical products and the first commercial product is expected in late 1990. Other target applications include electronic heat sink substrates, x-ray lithography masks, metal cutting tools and bearings.

Source record↗

Postshock Annealing and Postannealing Shock in Equilibrated Ordinary Chondrites: Implications for the Thermal and Shock Histories of Chondritic Asteroids

In addition to shock effects in olivine, plagioclase, orthopyroxene and Ca-pyroxene, petrographic shock indicators in equilibrated ordinary chondrites (OC) include chromite veinlets, chromite-plagioclase assemblages, polycrystalline troilite, metallic Cu, irregularly shaped troilite grains within metallic Fe-Ni, rapidly solidified metal-sulfide intergrowths, martensite and various types of plessite, metal-sulfide veins, large metal and/or sulfide nodules, silicate melt veins, silicate darkening, low-Ca clinopyroxene, silicate melt pockets, and large regions of silicate melt. The presence of some of these indicators in every petrologic type-4 to -6 ordinary chondrite (OC) demonstrates that collisional events caused all equilibrated OC to reach shock stages S3-S6. Those type-4 to -6 OC that are classified as shock-stage S1 (on the basis of sharp optical extinction in olivine) underwent postshock annealing due to burial beneath materials heated by the impact event. Those type-4 to -6 OC that are classified S2 (on the basis of undulose extinction and lack of planar fractures in olivine) were shocked to stage S3-S6, annealed to stage S1 and then shocked again to stage S2. Some OC were probably shocked to stage 253 after annealing. It seems likely that many OC experienced multiple episodes of shock and annealing. Because 40Ar-39Ar chronological data indicate that MIL 99301 (LL6, Sl) was annealed approximately 4.26 Ga ago, presumably as a consequence of a major impact, it seems reasonable to suggest that other equilibrated S1 and S2 OC (which contain relict shock features) were also annealed by impacts. Because some type-6 S1 OC (e.g., Guarena, Kernouve, Portales Valley, all of which contain relict shock features) were annealed 4.44-4.45 Ga ago (during a period when impacts were prevalent and most OC were thermally metamorphosed), it follows that impact-induced annealing could have contributed significantly to OC thermal metamorphism.

Rubin, Alan E.↗

Diamond Smoothing Tools

Diamond smoothing tools have been proposed for use in conjunction with diamond cutting tools that are used in many finish-machining operations. Diamond machining (including finishing) is often used, for example, in fabrication of precise metal mirrors. A diamond smoothing tool according to the proposal would have a smooth spherical surface. For a given finish machining operation, the smoothing tool would be mounted next to the cutting tool. The smoothing tool would slide on the machined surface left behind by the cutting tool, plastically deforming the surface material and thereby reducing the roughness of the surface, closing microcracks and otherwise generally reducing or eliminating microscopic surface and subsurface defects, and increasing the microhardness of the surface layer. It has been estimated that if smoothing tools of this type were used in conjunction with cutting tools on sufficiently precise lathes, it would be possible to reduce the roughness of machined surfaces to as little as 3 nm. A tool according to the proposal would consist of a smoothing insert in a metal holder. The smoothing insert would be made from a diamond/metal functionally graded composite rod preform, which, in turn, would be made by sintering together a bulk single-crystal or polycrystalline diamond, a diamond powder, and a metallic alloy at high pressure. To form the spherical smoothing tip, the diamond end of the preform would be subjected to flat grinding, conical grinding, spherical grinding using diamond wheels, and finally spherical polishing and/or buffing using diamond powders. If the diamond were a single crystal, then it would be crystallographically oriented, relative to the machining motion, to minimize its wear and maximize its hardness. Spherically polished diamonds could also be useful for purposes other than smoothing in finish machining: They would likely also be suitable for use as heat-resistant, wear-resistant, unlubricated sliding-fit bearing inserts.

Voronov, Oleg↗

Dip coating process: Silicon sheet growth development for the large-area silicon sheet task of the low-cost silicon solar array project

The technical and economic feasibility of producing solar cell quality sheet silicon by dip-coating one surface of carbonized ceramic substrates with a thin layer of large grain polycrystalline silicon was investigated. The dip-coating methods studied were directed toward a minimum cost process with the ultimate objective of producing solar cells with a conversion efficiency of 10% or greater. The technique shows excellent promise for low cost, labor-saving, scale-up potentialities and would provide an end product of sheet silicon with a rigid and strong supportive backing. An experimental dip-coating facility was designed and constructed, several substrates were successfully dip-coated with areas as large as 25 sq cm and thicknesses of 12 micron to 250 micron. There appears to be no serious limitation on the area of a substrate that could be coated. Of the various substrate materials dip-coated, mullite appears to best satisfy the requirement of the program. An inexpensive process was developed for producing mullite in the desired geometry.

Heaps, J. D.↗

CVD of SiC and AlN using cyclic organometallic precursors

The use of cyclic organometallic molecules as single-source MOCVD precursors is illustrated by means of examples taken from our recent work on AlN and SiC deposition, with particular focus on SiC. Molecules containing (AlN)3 and (SiC)2 rings as the 'core structure' were employed as the source materials for these studies. The organoaluminum amide, (Me2AlNH2)3, was used as the AlN source and has been studied in a molecular beam sampling apparatus in order to determine the gas phase species present in a hot-wall CVD reactor environment. In the case of SiC CVD, a series of disilacyclobutanes (Si(XX')CH2)2 (with X and X' = H, CH3, and CH2SiH2CH3), were examined in a cold-wall, hot-stage CVD reactor in order to compare their relative reactivities and prospective utility as single-source CVD precursors. The parent compound, disilacyclobutane, (SiH2CH2)2, was found to exhibit the lowest deposition temperature (ca. 670 C) and to yield the highest purity SiC films. This precursor gave a highly textured, polycrystalline film on the Si(100) substrates.

Interrante, L. V.↗

Temperature stability of Al(x)Ga(1-x)As (x = 0-1) thermal oxide masks for selective-area epitaxy

The use of thermal oxides of Al(x)Ga(1-x)As (x = 0-1) as masking materials for selective-area epitaxy by a organometallic chemical-vapor deposition has been investigated. It was found that the thermal oxide of GaAs is only applicable for low growth temperatures (less than or equal to 600 C), and the addition of aluminum significantly improves the thermal stability of the oxide. The oxide of Al(0.4)Ga(0.6)As is suitable for high-temperature deposition, but there are criteria for the thickness and oxidation temperature. Thin layers of AlAs oxidized at 475 C are excellent masks and allow precise thickness control. Promising results of selective-area deposition using these aluminum oxide masks have been obtained. High-quality single crystal grew in mask openings uniformly surrounded by dense and fine-grain polycrystalline deposits, producing a planar duplication of the original pattern.

Jones, Stephen H.↗

Modeling and Characterization of Damage Processes in Metallic Materials

This paper describes a broad effort that is aimed at understanding the fundamental mechanisms of crack growth and using that understanding as a basis for designing materials and enabling predictions of fracture in materials and structures that have small characteristic dimensions. This area of research, herein referred to as Damage Science, emphasizes the length scale regimes of the nanoscale and the microscale for which analysis and characterization tools are being developed to predict the formation, propagation, and interaction of fundamental damage mechanisms. Examination of nanoscale processes requires atomistic and discrete dislocation plasticity simulations, while microscale processes can be examined using strain gradient plasticity, crystal plasticity and microstructure modeling methods. Concurrent and sequential multiscale modeling methods are being developed to analytically bridge between these length scales. Experimental methods for characterization and quantification of near-crack tip damage are also being developed. This paper focuses on several new methodologies in these areas and their application to understanding damage processes in polycrystalline metals. On-going and potential applications are also discussed.

Glaessgen, E. H.↗

Amorphous metallic films in silicon metallization systems

The general objective was to determine the potential of amorphous metallic thin films as a means of improving the stability of metallic contacts to a silicon substrate. The specific objective pursued was to determine the role of nitrogen in the formation and the resulting properties of amorphous thin-film diffusion barriers. Amorphous metallic films are attractive as diffusion barriers because of the low atomic diffusivity in these materials. Previous investigations revealed that in meeting this condition alone, good diffusion barriers are not necessarily obtained, because amorphous films can react with an adjacent medium (e.g., Si, Al) before they recrystallize. In the case of a silicon single-crystalline substrate, correlation exists between the temperature at which an amorphous metallic binary thin film reacts and the temperatures at which the films made of the same two metallic elements react individually. Amorphous binary films made of Zr and W were investigated. Both react with Si individually only at elevated temperatures. It was confirmed that such films react with Si only above 700 C when annealed in vacuum for 30 min. Amorphous W-N films were also investigated. They are more stable as barriers between Al and Si than polycrystalline W. Nitrogen effectively prevents the W-Al reaction that sets in at 500 C with polycrystalline W.

Nicolet, M. A.↗

Effects of grain boundaries in polycrystalline solar cells

In polycrystalline solar cells, the short-circuit current is reduced (compared to single-crystal cells) due to recombination of minority carriers at the grain boundaries. The magnitude of this reduction is calculated for the case of a monochromatic beam of light, assuming that both the light beam and the grain boundaries are perpendicular to a p-n junction. The photoresponse of the junction is calculated in terms of the absorption coefficient of the light, the minority-carrier diffusion length, the surface recombination velocity at the grain boundary and the distance of the light beam from the grain boundary. The analysis gives an expression for an effective grain boundary width which depends on wavelength. This width determines the reduction in short-circuit current of solar cells made from material with columnar-type grains.

Zook, J. D.↗

Coating MCPs with AlN and GaN

A development effort underway at the time of reporting the information for this article is devoted to increasing the sensitivity of microchannel plates (MCPs) as detectors of photons and ions by coating the MCPs with nitrides of elements in period III of the periodic table. Conventional MCPs are relatively insensitive to slowly moving, large-mass ions for example, ions of biomolecules under analysis in mass spectrometers. The idea underlying this development is to coat an MCP to reduce its work function (decrease its electron affinity) in order to increase both (1) the emission of electrons in response to impingement of low-energy, large-mass ions and (2) the multiplying effect of secondary electron emission. Of particular interest as coating materials having appropriately low or even negative electron affinities are gallium nitride, aluminum nitride, and ternary alloys of general composition Al(x)Ga(1-x)N (where 0<x<1). These materials exhibit attractively high degrees of chemical, mechanical, and thermal stability plus acceptably high resistance to sputtering. The electron-excitation cross sections of these materials are expected to exceed those of several other materials (including diamond) that are, variously, in use or under development for the same purpose. Moreover, by doping these materials with silicon, one can render them partly electrically conductive, thereby suppressing the undesired accumulation of electric charge that could otherwise occur during bombardment by ions. For experiments, thin films of AlN and GaN both undoped and doped with Si were deposited on commercial MCPs by radio-frequency molecular-beam epitaxy (also known as plasma-assisted molecular-beam epitaxy) at temperatures <200 C. This deposition technique is particularly suitable because (1) MCPs cannot withstand the higher deposition-substrate temperatures used to decompose constituent compounds in some other deposition techniques and (2) in this technique, the constituent Al, Ga, and N are supplied in elemental form, so that there is no need for thermal decomposition at the substrate surface. The nitride films thus formed were, variously, amorphous or polycrystalline. The nitride films were coated with surface layers of gold <100 thick. The MCPs were tested in a standard configuration in which the output stage of a first MCP was coupled to the input stage of a second MCP. Each pair of MCPs was mounted in a standard holder that included front and back contact rings and an anode for collecting the output electrons of the second MCP. The MCP pairs were biased at potentials between 1.7 and 1.9 kV, and count rates measured after preamplification and discrimination. To enable a direct comparison, in one pair, the second MCP was uncoated while the first MCP was coated over half its surface. The coated and uncoated sides of the half-coated MCP were exposed to fluxes of argon ions at kinetic energies of 1.0 and 0.5 keV. At 1.0 keV, the count rate for the coated side was about 2.3 times greater than that for the uncoated side; at 0.5 keV, the count rate for the coated side was about 1.8 times greater than that for the uncoated side.

Bensaoula, Abdelhakim↗