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At least 289 records · Page 16

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NASA NTRS2009

Development of Ceramic Solid-State Laser Host Material

Polycrystalline ceramic laser materials are gaining importance in the development of novel diode-pumped solid-state lasers. Compared to single-crystals, ceramic laser materials offer advantages in terms of ease of fabrication, shape, size, and control of dopant concentrations. Recently, we have developed Neodymium doped Yttria (Nd:Y2O3) as a solid-state ceramic laser material. A scalable production method was utilized to make spherical non agglomerated and monodisperse metastable ceramic powders of compositions that were used to fabricate polycrystalline ceramic material components. This processing technique allowed for higher doping concentrations without the segregation problems that are normally encountered in single crystalline growth. We have successfully fabricated undoped and Neodymium doped Yttria material up to 2" in diameter, Ytterbium doped Yttria, and erbium doped Yttria. We are also in the process of developing other sesquioxides such as scandium Oxide (Sc2O3) and Lutesium Oxide (Lu2O3) doped with Ytterbium, erbium and thulium dopants. In this paper, we present our initial results on the material, optical, and spectroscopic properties of the doped and undoped sesquioxide materials. Polycrystalline ceramic lasers have enormous potential applications including remote sensing, chem.-bio detection, and space exploration research. It is also potentially much less expensive to produce ceramic laser materials compared to their single crystalline counterparts because of the shorter fabrication time and the potential for mass production in large sizes.

Prasad, Narasimha S.↗

NASA NTRS2020

Comparison of Compressive Stress-Strain Responses at High Temperatures for Representative Single Crystal and Polycrystal Superalloys

Polycrystalline disk superalloys and single crystal blade superalloys have divergent grain and precipitate microstructures but can each display reduced strength and increasing deformation for certain test conditions at high temperatures. To allow thermo-mechanical processes such as forging and rolling to be applied, favorable temperatures and strain rates must first be identified using compression testing. The objective of this study was to perform compression tests at high temperatures on a polycrystalline disk superalloy and a single crystal blade superalloy in order to compare their stress-strain responses for given test conditions and determine preferred conditions. It was determined that the conditions required for stable flow differed significantly between the polycrystalline and single crystal superalloys. The conditions leading to unstable flow were also identified for each alloy. The microstructural deformation modes for both stable and unstable flow are discussed.

compression, superalloy, turbine engine↗

NASA NTRS1972

Cesium oxide-cesium solution as a source of cesium and oxygen.

Examination of the feasibility of using the solution as a source of cesium and oxygen, with description of an experimental system designed for a systematic investigation. Preliminary data are presented. Thermionic performance of the converter was recorded before the injection of oxygen at emitter temperatures of 1600, 1700, 1800, and 1900 K. The power of this converter, which had a polycrystalline tungsten emitter and a polycrystalline molybdenum collector, is compared with other converters. Experimental results show that cesium oxide mole factors higher than 0.18 are needed to achieve oxygen effects. It appears not to be necessary to be concerned about avoiding oxygen impurities in the cesium reservoir, since mole fractions as high as 0.18 have failed to influence the performance.

Gunther, B.↗

NASA NTRS1973

Observation of oxide particles below the apparent oxygen solubility limit in tantalum

The apparent solubility of oxygen in polycrystalline tantalum as determined by the X-ray diffraction lattice parameter technique is about 1.63 atomic percent at 820 C. However, oxide particles were identified in samples containing as low as 0.5 atomic percent of oxygen. These oxide particles were present at the grain boundaries and within the grains. The number of oxide particles increased with increasing oxygen concentration in tantalum. The presence of oxide particles suggests that the true solubility of oxygen in the polycrystalline tantalum metal is probably significantly lower than that reported in the literature.

Stecura, S.↗

NASA NTRS1973

Low-temperature epitaxy of Ge films by sputter deposition.

It is shown experimentally that isoepitaxial growth of Ge films on Ge substrates can be obtained by dc sputtering at substrate temperatures as low as 100 C. The crystallographic structure and orientation of the films are strongly influenced by such deposition parameters as substrate temperature, growth rate, surface contamination, and sputtering-gas purity. The amorphous-polycrystalline transition occurs between 110 and 115 C, while the polycrystalline-single crystalline transition occurs at roughly 140 C. The crystallographic order increases with increasing substrate temperature.

Khan, I. H.↗

NASA NTRS1973

Design, fabrication and characteristics of new types of back surface field cells

Several new types of back surface field (BSF) cells were designed and fabricated. These include boron and phosphorus diffused BSF cells, single crystal epitaxially grown BSF cells and chemically vapor deposited (CVD) polycrystalline BSF cells. Boron diffusion yielded 10 ohm-cm BSF cells with 0.6 volt open-circuit voltages and collection efficiencies equal to those previously reported for aluminum alloying. The epitaxially grown cells also exhibited high open-circuit voltages and collection efficiencies and may be more radiation damage resistant. The polycrystalline cells had very high internal series resistance. No direct relationship was found to exist between collection efficiency and open-circuit voltage, V sub oc in BSF cells. Results indicate that the V sub oc effect is not caused simply by the mechanism of blocking of minority carriers.

Mandelkorn, J.↗

NASA NTRS1974

Observation of oxide particles below the apparent oxygen solubility limit in tantalum

The apparent solubility of oxygen in polycrystalline tantalum as determined by the X-ray diffraction lattice parameter technique is about 1.63 at. pct at 820 C. However, oxide particles were identified in samples containing as low as 0.5 at. pct oxygen. These particles were present at the grain boundaries and within the grains. The number of oxide particles increased with increasing oxygen concentration in tantalum. The presence of oxide particles suggests that the true solubility in the polycrystalline tantalum metal is probably lower than that reported in the literature.

Stecura, S.↗

NASA NTRS1974

Design, fabrication and characteristics of new types of back surface field cells

Mandelkorn, J.↗

NASA NTRS1975

Hydrogen diffusion and trapping in nickel

An analysis of hydrogen transport in pure polycrystalline nickel foils and rods at 300-550 K shows that both trapping and short-circuit diffusion are present and have small yet significant effects on permeation, evolution, and absorption. Both effects appear to be associated primarily with the dislocation substructure of nickel. Relations describing hydrogen transport in nickel are obtained using the data on deuterium permeation, tritium absorption, and outgassing in pure polycrystalline nickel together with earlier measurements of diffusivity and solubility of hydrogen isotopes.

Louthan, M. R., Jr.↗

NASA NTRS1975

Glass-Si heterojunction solar cells

An increase in efficiency from 2% to over 7% was achieved by a solar cell that used polycrystal silicon heterojunction with SnO2 glass. For Single crystal substrates, efficiencies close to 10% were measured. These cells had the same structures as polycrystalline cells. Work on p+/n heterojunction using In2O3 glass resulted in cells of 3% efficiency on polycrystalline material and 4% efficiency on single crystal material.

Ahrons, R. W.↗

NASA NTRS1975

Feasibility investigation of growing gallium arsenide single crystals in ribbon form

Polycrystalline GaAs ribbons have been grown in graphite boats by passage of a wide zone through B2O3 encapsulated feed stock, confined by a quartz cover plate. By controlling the heat flow in the graphite boat and controlling the zoning rate, large grained, single phase polycrystalline samples with directional solidification and good thickness control were achieved. Arsenic vaporization was effectively suppressed at the melting point of GaAs by the B2O3 moat and 3 atmospheres of pressure. A vertical constrained-zone-melting apparatus with a B2O3 moat seal, rf heating, and water cooling on the bottom will be used to control the heat flow and temperature patterns required for growth of single crystal ribbons.

Richardson, D. L.↗

NASA NTRS1976

Chemical vapor deposition growth

A chemical vapor deposition (CVD) reactor system with a vertical deposition chamber was used for the growth of Si films on glass, glass-ceramic, and polycrystalline ceramic substrates. Silicon vapor was produced by pyrolysis of SiH4 in a H2 or He carrier gas. Preliminary deposition experiments with two of the available glasses were not encouraging. Moderately encouraging results, however, were obtained with fired polycrystalline alumina substrates, which were used for Si deposition at temperatures above 1,000 C. The surfaces of both the substrates and the films were characterized by X-ray diffraction, reflection electron diffraction, scanning electron microscopy optical microscopy, and surface profilometric techniques. Several experiments were conducted to establish baseline performance data for the reactor system, including temperature distributions on the sample pedestal, effects of carrier gas flow rate on temperature and film thickness, and Si film growth rate as a function of temperature.

Ruth, R. P.↗

NASA NTRS1976

Chemical vapor deposition growth

A laboratory type CVD reactor system with a vertical deposition chamber and sample pedestal heated by an external RF coil has been extensively modified by installation of mass flow controllers, automatic process sequence timers, and special bellows-sealed air-operated valves for overall improved performance. Various film characterization procedures, including classical metallography, SEM analyses, X ray diffraction analyses, surface profilometry, and electrical measurements (resistivity, carrier concentration, mobility, spreading resistance profiles, and minority-carrier lifetime by the C-V-t method) area used to correlate Si sheet properties with CVD parameters and substrate properties. Evaluation procedures and measurements are given. Experimental solar cell structures were made both in epitaxial Si sheet (on sapphire substrates) and in polycrystalline material on alumina substrates, the former to provide an indication of what might be an upper limit on performance of the latter. Preliminary results are given, as obtained in cell structures not specially designed to allow for the unique properties of the sheet material, and fabricated in material known to be far from optimum for photovoltaic performance. Low power conversion efficiencies have been obtained in the epitaxial as well as the polycrystalline Si sheet.

Ruth, R. P.↗

NASA NTRS1977

Synthesis of silane and silicon in a non-equilibrium plasma jet

The feasibility of using a non-equilibrium hydrogen plasma jet as a chemical synthesis tool was investigated. Four possible processes were identified for further study: (1) production of polycrystalline silicon photovoltaic surfaces, (2) production of SiHCl3 from SiCl4, (3) production of SiH4 from SiHCl3, and (4) purification of SiCl4 by metal impurity nucleation. The most striking result was the recognition that the strongly adhering silicon films, amorphous or polycrystalline, produced in our studies could be the basis for preparing a photovoltaic surface directly; this process has potential advantages over other vapor deposition processes.

Calcote, H. F.↗

NASA NTRS1978

Hot forming of silicon sheet, silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

The hot workability of polycrystalline silicon was studied. Uniaxail stress-strain curves are given for strain rates in the range of .0001 to .1/sec and temperatures from 1100 to 1380 C. At the highest strain rates at 1380 C axial strains in excess of 20% were easily obtainable without cracking. After deformations of 36%, recrystallization was completed within 0.1 hr at 1380 C. When the recrystallization was complete, there was still a small volume fraction of unrecyrstallized material which appeared very stable and may degrade the electronic properties of the bulk materials. Texture measurements showed that the as-produced vapor deposited polycrystalline rods have a 110 fiber texture with the 110 direction parallel to the growth direction and no preferred orientation about this axis. Upon axial compression perpendicular to the growth direction, the former 110 fiber axis changed to 111 and the compression axis became 110 . Recrystallization changed the texture to 110 along the former fiber axis and to 100 along the compression axis.

Graham, C. D., Jr.↗

NASA NTRS1977

Effect of microstructure on Na/+/ diffusion in beta alumina

The effect of microstructural features, such as grain size and orientation, on sodium ion diffusion in polycrystalline beta alumina is investigated; the ionic solid is suitable for use in high-energy and power density batteries. Two types of hot-pressed polycrystalline samples are studied, one with grains highly oriented in the direction normal to the pressing direction, the other with significantly less preferred orientation normal to the pressing direction. Results of the experimental assessments indicate that grain size and diffusion path tortuosity have little effect on diffusion kinetics, while grain boundary type and grain aspect ratio are important factors in determining the diffusion rate.

Sarian, S.↗

NASA NTRS1978

Epitaxial solar cells on low-cost silicon substrates

This work is directed toward a low-cost approach to the fabrication of silicon solar cells and combines the advantages and flexibility of the epitaxial technique with the use of potentially low-cost silicon substrates. Epitaxial graded base n/p/p+ solar cell structures were grown and evaluated on various forms of polycrystalline and metallurgical grade silicon as well as single crystal substrates. X-ray topographic techniques have shown improvements in the crystallographic quality of the layer grown on polycrystalline material.

Robinson, P. H.↗

NASA NTRS1979

Silicon materials outlook study for 1980-1985 calendar years

The polycrystalline silicon industry was studied in relation to future market needs. Analysis of the data obtained indicates that there is a high probability of polycrystalline silicon shortage by the end of 1982 and a strong seller's market after 1981 which will foster price competition for available silicon.

Costogue, E.↗