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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 289 records · Page 16
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Data and Code for Atomic Scale Etching of Diamond: Insights from Molecular Dynamics Simulations

This work investigates the effects of argon ions, hydrogen atoms, and hydrogen ions on the diamond (100) surface using classical molecular dynamics simulations. The purpose of this investigation was to asses plasma processing techniques for applications in quantum device manufacturing. The simulations suggest that combining argon ion smoothing with selective, near threshold energy H removal of amorphous C could be an effective strategy for diamond surface engineering, leading to more reliable and sensitive diamond color center devices. Results were found to differ significantly with interatomic potential, and an analysis of these differences was also carried out. Included in this repository are LAMMPS source files, input scripts, and plotting scripts required to reproduce the data. Also included are the output data required to make all the plots included in the associated publication.

Brenner↗
NASA NTRS1994

Energetic-particle abundances in impulsive solar flare events

We report on the abundances of energetic particles from impulsive solar flares, including those from a survey of 228 He-3 rich events, with He-3/He-4 is greater than 0.1, observed by the International Sun Earth Explorer (ISEE) 3 spacecraft from 1978 August through 1991 April. The rate of occurrence of these events corresponds to approximately 1000 events/yr on the solar disk at solar maximum. Thus the resonant plasma processes that enhance He-3 and heavy elements are a common occurrence in impulsive solar flares. To supply the observed fluence of He-3 in large events, the acceleration must be highly efficient and the source region must be relatively deep in the atmosphere at a density of more than 10(exp 10) atoms/cu cm. He-3/He-4 may decrease in very large impulsive events because of depletion of He-3 in the source region. The event-to-event variations in He-3/He-4, H/He-4, e/p, and Fe/C are uncorrelated in our event sample. Abundances of the elements show a pattern in which, relative to coronal composition, He-4, C, N, and O have normal abundance ratios, while Ne, Mg, and Si are enhanced by a factor approximately 2.5 and Fe by a factor approximately 7. This pattern suggests that elements are accelerated from a region of the corona with an electron temperature of approximately 3-5 MK, where elements in the first group are fully ionized (Q/A = 0.5), those in the second group have two orbital electrons (Q/A approximately 0.43), and Fe has Q/A approximately 0.28. Ions with the same gyrofrequency absorb waves of that frequency and are similarly accelerated and enhanced. Further stripping may occur after acceleration as the ions begin to interact with the streaming electrons that generated the plasma waves.

Reames, D. V.↗
DOE OSTI2021

Magnetic Field Reconstruction for a Realistic Multi-Point, Multi-Scale Spacecraft Observatory

Future in situ space plasma investigations will likely involve spatially distributed observatories comprised of multiple spacecraft, beyond the four and five spacecraft configurations currently in operation. Inferring the magnetic field structure across the observatory, and not simply at the observation points, is a necessary step towards characterizing fundamental plasma processes using these unique multi-point, multi-scale data sets. We propose improvements upon the classic first-order reconstruction method, as well as a second-order method, utilizing magnetometer measurements from a realistic nine-spacecraft observatory. The improved first-order method, which averages over select ensembles of four spacecraft, reconstructs the magnetic field associated with simple current sheets and numerical simulations of turbulence accurately over larger volumes compared to second-order methods or first-order methods using a single regular tetrahedron. Using this averaging method on data sets with fewer than nine measurement points, the volume of accurate reconstruction compared to a known magnetic vector field improves approximately linearly with the number of measurement points.

79 ASTRONOMY AND ASTROPHYSICS↗
NASA NTRS1976

Cooling and recombination processes in cometary plasma

The ion electron plasma in comets is examined for cooling processes which result from its interactions with the neutral coma. A cometary coma model is formulated that is composed predominantly of H2O and its decomposition products where electrons are cooled in a variety of processes at rates varying with energy. It is shown that solar plasma plus accumulated cometary ions and electrons is affected very strongly as it flows into the coma. The electrons are rapidly cooled and all but some 10% of the ions undergo charge exchange. Photodissociation of H2O is assumed where ion electron recombination is the dominant loss process.

Wallis, M. K.↗
DOE OSTI2026

Full-polarization millimeter wavelength variability of Sagittarius A * during the 2018 EHT campaign

Context. Sagittarius A* (Sgr A*), the supermassive black hole at the center of the Milky Way, provides a unique laboratory to study accretion dynamics and plasma processes near the event horizon. Aims. We investigated the variability and polarization properties of Sgr A* using ALMA observations during the 2018 Event Horizon Telescope campaign. Methods. We analyzed high-cadence full-polarization light curves from ALMA at millimeter wavelengths, performed time-series analysis, and investigated the temporal behavior during an X-ray flare observed by Chandra on 2018 April 24. The variability characteristics are compared with expectations from standard accretion flow models. Results. We find low variability in total intensity (σ/μ < 10%), but significantly higher variability in linear and circular polarization (∼30% and ∼50%, respectively). A time-series analysis reveals red-noise variability, with power spectral densities between −2 and −3 across all Stokes parameters. Polarized intensity shows stable intra-day timescales, while total intensity exhibits more variable timescales, suggesting distinct emission regions, with polarization likely arising from a coherent structure. On April 24, a statistically significant inter-band delay in polarized intensity coincides with a near-simultaneous X-ray and millimeter peak that deviates from the typical delayed flare scenario. This event also features enhanced millimeter variability and coherent polarization loop evolution. The observed simultaneity challenges standard models of transient synchrotron emission with cooling delays, favoring instead a scenario of continuous energy injection in an optically thin region. Conclusions. Our results offer new constraints on the physical mechanisms driving variability in Sgr A*, and provide key observational input for refining theoretical models of accretion and plasma behavior in the vicinity of supermassive black holes.

Galaxy: center↗
DOE OSTI2025

Observation of a Knotted Electron Diffusion Region in Earth's Magnetotail Reconnection

Magnetic reconnection is a fundamental plasma process that alters the magnetic field topology and releases magnetic energy. Most numerical simulations and spacecraft observations assume a two‐dimensional diffusion region, with the electron diffusion region (EDR) embedded in the same plane as the ion diffusion region (IDR) and a uniform guide field throughout. Using observations from Magnetospheric Multiscale mission, we report a non‐coplanar, knotted EDR in Earth's magnetotail current sheet. The reconnection plane of the knotted EDR deviates by approximately 38° from that of the IDR, with the guide field exhibiting both a 38° directional shift and a twofold increase in amplitude. Moreover, the Hall magnetic field is bipolar in the EDR but quadrupolar in the IDR, indicating different Hall current structures at electron and ion scales. These observations highlight the importance of three‐dimensional effects and illustrate the complexity of multiscale coupling between the EDR and IDR during reconnection studies.

diffusion region↗
DOE OSTI2020

Nonthermal electron and ion acceleration by magnetic reconnection in large laser-driven plasmas

Magnetic reconnection is a fundamental plasma process that is thought to play a key role in the production of nonthermal particles associated with explosive phenomena in space physics and astrophysics. Experiments at high-energy-density facilities are starting to probe the microphysics of reconnection at high Lundquist numbers and large system sizes. We have performed particle-in-cell (PIC) simulations to explore particle acceleration for parameters relevant to laser-driven reconnection experiments. We study particle acceleration in large system sizes that may be produced soon with the most energetic laser drivers available, such as at the National Ignition Facility. In these conditions, we show the possibility of reaching the multi-plasmoid regime, where plasmoid acceleration becomes dominant. Our results show the transition from X point to plasmoid-dominated acceleration associated with the merging and contraction of plasmoids that further extend the maximum energy of the power-law tail of the particle distribution for electrons. We also find for the first time a system-size-dependent emergence of nonthermal ion acceleration in driven reconnection, where the magnetization of ions at sufficiently large sizes allows them to be contained by the magnetic field and energized by direct X point acceleration. For feasible experimental conditions, electrons and ions can attain energies of ϵ max , e / k B T e > 100 and ϵ max , i / k B T i > 1000 . Using PIC simulations with binary Monte Carlo Coulomb collisions, we study the impact of collisionality on plasmoid formation and particle acceleration. The implications of these results for understanding the role reconnection plays in accelerating particles in space physics and astrophysics are discussed.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Quantifying Pore Morphology in Spray-Formed Tantalum Using X-ray Micro-computed Tomography

In order to establish quantitative process–structure–property relationships in thermal spray coatings, a robust framework for defining (micro)structural characteristics is needed. Here, we present a quantitative characterization of the three-dimensional morphology of porosity in spray-formed tantalum samples based on high-resolution X-ray micro-computed tomography. Using synchrotron facilities, we acquired dozens of high-resolution scans, enabling a statistically meaningful comparison across multiple samples, different regions within samples, and spray processes. We quantify the spatial distribution, size, and topology of porous inclusions, with a significant focus on variability across samples and different spray processes (plasma and cold sprayed), as well as sensitivity to image segmentation and resolution. Based on a typical segmentation, we report porosities ranging from 0.9 to 1.7 pct for all samples tested, with significant sensitivity due to image segmentation resulting in estimates as low as 0.6 pct and as high as 4.8 pct. For the complex pore space morphology observed in these materials, we argue that a conventional analysis based on identifying individual pores is not well suited, and propose an alternative approach based on morphological metrics with a rich history in porous media literature, such as spatial correlations, local pore thickness, and scale-dependent sub-sampling. Spatial correlations indicate anisotropic splat structures, but only mildly anisotropic pores. Various measures of pore size show a wide distribution of sizes, ranging from sub-micron to 10-micron length scales. Scale-dependent variations in porosity suggest that representative volumes of several hundred microns are required for convergence of morphological metrics, with larger volumes for cold-spray materials. This work provides a robust quantitative basis for describing three-dimensional pore structure in thermal spray coatings.

36 MATERIALS SCIENCE↗
DOE OSTI2026

High-Performance Near-Infrared Quantum Emission from Color Centers in hBN

Color centers hosted in hexagonal boron nitride (hBN) have emerged as a highly promising platform for single-photon emission and spin-photon technologies relevant to quantum communication and quantum networking. As a wide bandgap van der Waals material, hBN can host optically active quantum defects across a broad spectral range. Here, we demonstrate a simple and scalable oxygen-plasma process that reproducibly creates single quantum emitters in hBN with blinking-free zero-phonon lines (ZPLs) spanning near-infrared (NIR) from 700 up to 971 nm. These emitters combine MHz-level brightness, single-photon purity up to 99.9%, and ultranarrow cryogenic line widths down to 2.7 GHz under quasi-resonant excitation, placing them in a particularly attractive regime for quantum photonics. Photostability measurements further reveal resistance to photobleaching, subnanometer spectral stability over long time scales, and near-shot-noise-limited intensity fluctuations. Analysis of the phonon sidebands shows weak vibronic coupling and ZPL-dominated emission, with Debye–Waller factors approaching 50%. Control experiments together with elemental mapping support oxygen incorporation as a necessary ingredient in activating the NIR emitter population, while first-principles calculations identify O N V N and O N V N H as the leading defect candidates. These results establish a high-performance NIR quantum-emitter platform in hBN for free-space quantum networking and future integrated quantum-photonic architectures.

2D materials↗
DOE OSTI2022

Fluid and hybrid simulations of the ionization instabilities in Hall thruster

Low-frequency axial oscillations in the range of 5–50 kHz stand out as a pervasive feature observed in many types of Hall thrusters. While it is widely recognized that the ionization effects play the central role in this mode, as manifested via the large-scale oscillations of neutral and plasma density, the exact mechanism(s) of the instabilities remain unclear. To gain further insight into the physics of the breathing mode and evaluate the role of kinetic effects, a one-dimensional time-dependent full nonlinear low-frequency model describing neutral atoms, ions, and electrons is developed in full fluid formulation and compared to the hybrid model in which the ions and neutrals are kinetic. Both models are quasi-neutral and share the same electron fluid equations that include the electron diffusion, mobility across the magnetic field, and the electron energy evolution. The ionization models are also similar in both approaches. Further, the predictions of fluid and hybrid simulations are compared for different test cases. Two main regimes are identified in both models: one with pure low-frequency behavior and the other one, where the low-frequency oscillations coexist with high-frequency oscillations in the range of 100–200 kHz, with the characteristic time scale of the ion channel fly-by time, 100–200 kHz. The other test case demonstrates the effect of a finite temperature of injected neutral atoms, which has a substantial suppression effect on the oscillation amplitude.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Voltage waveform tailoring for high aspect ratio plasma etching of SiO 2 using Ar/CF 4 /O 2 mixtures: Consequences of low fundamental frequency biases

The use of non-sinusoidal waveforms in low pressure capacitively coupled plasmas intended for microelectronics fabrication has the goal of customizing ion and electron energy and angular distributions to the wafer. One such non-sinusoidal waveform uses the sum of consecutive harmonics of a fundamental sinusoidal frequency, f 0 , having a variable phase offset between the fundamental and even harmonics. In this paper, we discuss results from a computational investigation of the relation between ion energy and DC self-bias when varying the fundamental frequency f 0 for capacitively coupled plasmas sustained in Ar/CF 4 /O 2 and how those trends translate to a high aspect ratio etching of trenches in SiO 2 . The fundamental frequency, f 0 , was varied from 1 to 10 MHz and the relative phase from 0° to 180°. Two distinct regimes were identified. Average ion energy onto the wafer is strongly correlated with the DC self-bias at high f 0 , with there being a maximum at φ = 0° and minimum at φ = 180°. In the low frequency regime, this correlation is weak. Average ion energy onto the wafer is instead dominated by dynamic transients in the applied voltage waveforms, with a maximum at φ = 180° and minimum at φ = 0°. The trends in ion energy translate to etch properties. In both, the high and low frequency regimes, higher ion energies translate to higher etch rates and generally preferable final features, though behaving differently with phase angle.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Plasma sources for advanced semiconductor applications

Semiconductors are the foundation of modern technology, used in our personal, industrial, and military-grade devices. Further, every aspect of U.S. society is closely tied to semiconductors, and our economy cannot progress at the current pace with existing chip manufacturing methods as chip features approach an atomistic scale.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2024

Diamond surface functionalization via visible light–driven C–H activation for nanoscale quantum sensing

Nitrogen-vacancy (NV) centers in diamond are a promising platform for nanoscale NMR sensing. Despite significant progress toward using NV centers to detect and localize nuclear spins down to the single spin level, NV-based spectroscopy of individual, intact, arbitrary target molecules remains elusive. Such sensing requires that target molecules are immobilized within nanometers of NV centers with long spin coherence. The inert nature of diamond typically requires harsh functionalization techniques such as thermal annealing or plasma processing, limiting the scope of functional groups that can be attached to the surface. Solution-phase chemical methods can be readily generalized to install diverse functional groups, but they have not been widely explored for single-crystal diamond surfaces. Moreover, realizing shallow NV centers with long spin coherence times requires highly ordered single-crystal surfaces, and solution-phase functionalization has not yet been shown with such demanding conditions. In this work, we report a versatile strategy to directly functionalize C–H bonds on single-crystal diamond surfaces under ambient conditions using visible light, forming C–F, C–Cl, C–S, and C–N bonds at the surface. This method is compatible with NV centers within 10 nm of the surface with spin coherence times comparable to the state of the art. As a proof-of-principle demonstration, we use shallow ensembles of NV centers to detect nuclear spins from surface-bound functional groups. Our approach to surface functionalization opens the door to deploying NV centers as a tool for chemical sensing and single-molecule spectroscopy.

Science & Technology - Other Topics↗
DOE OSTI2020

Effects of O 2 addition on in-plasma photo-assisted etching of Si with chlorine

Addition of oxygen was used to control the in-plasma photo-assisted etching (PAE) of p-type Si(100) and poly-Si in a high density, inductively coupled, Faraday-shielded, Ar/Cl 2 (225/25 SCCM), 60 mTorr plasma. After etching, samples were transferred under vacuum to an UHV x-ray photoelectron spectroscopy chamber for surface analysis. Samples etched under PAE conditions (ion energies below the ionassisted etching, IAE, threshold) had a thicker surface oxide and lower [Cl] surface concentration, when compared to samples etched under IAE conditions (ion energies above the IAE threshold). PAE was found not to be affected by 0.1 or 0.25 SCCM O 2 addition, while etching stopped with more than 0.5 SCCM O 2 addition. IAE with RF power on the sample stage, resulting in -65 V self-bias, was not affected by up to 2 SCCM of oxygen addition but decreased rapidly when more than 5 SCCM O 2 was added to the plasma. These results imply that PAE may be completely suppressed, while IAE occurs unobstructed. The implications of these findings are discussed in view of applications involving continuous wave and pulsed-plasma processes.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Radio-frequency magnetron sputter deposition of ultrathick boron carbide films

The deposition of thick B 4 C films with low residual stress by conventional direct-current magnetron sputtering is accompanied by the formation of dust particulates contaminating the target, chamber, and substrates and leading to the formation of nodular defects in films. Here, we demonstrate that the formation of particulates is greatly reduced during radio-frequency magnetron sputtering (RFMS). We systematically study properties of B 4 C films deposited by RFMS with a substrate temperature of 330 °C, a target-to-substrate distance of 10 cm, Ar working gas pressure in the range of 4.5–12.0 mTorr (0.6–1.6 Pa), and substrate tilt angles of 0°–80°. All films are x-ray amorphous. A columnar structure develops with increasing either Ar pressure or substrate tilt. For columnar films, the column tilt angle decreases with increasing Ar pressure, which we attribute to a corresponding increase in the width of the distribution of impact angles of deposition flux. In contrast to the Keller–Simmons rule, the deposition rate increases with increasing Ar pressure, which suggests a better coupling of the RF energy to the plasma processes that lead to target sputtering at higher pressures. There is a critical substrate tilt angle above which the total residual stress is close to zero. This critical substrate tilt angle is ~0° for an Ar pressure of 12 mTorr (1.6 Pa). The lower residual stress state, necessary for depositing ultrathick films, is characterized by a larger concentration of nanoscale inhomogeneities and decreased mechanical properties. Based on these results, RFMS deposition of 60-μm-thick B 4 C films is demonstrated.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Voltage waveform tailoring for high aspect ratio plasma etching of SiO 2 using Ar/CF 4 /O 2 mixtures: Consequences of ion and electron distributions on etch profiles

The quality of high aspect ratio (HAR) features etched into dielectrics for microelectronics fabrication using halogen containing low temperature plasmas strongly depends on the energy and angular distribution of the incident ions (IEAD) onto the wafer, as well as potentially that of the electrons (EEAD). Positive ions, accelerated to high energies by the sheath electric field, have narrow angular spreads and can penetrate deeply into HAR features. Electrons typically arrive at the wafer with nearly thermal energy and isotropic angular distributions and so do not directly penetrate deeply into features. These differences can lead to positive charging of the insides of the features that can slow etching rates and produce geometric defects such as twisting. In this work, we computationally investigated the plasma etching of HAR features into SiO 2 using tailored voltage waveforms in a geometrically asymmetric capacitively coupled plasma sustained in an Ar/CF 4 /O 2 mixture at 40 mTorr. The tailored waveform consisted of a sinusoidal wave and its higher harmonics with a fundamental frequency of 1 MHz. We found that some degree of control of the IEADs and EEADs is possible by adjusting the phase of higher harmonics φ through the resulting generation of electrical asymmetry and electric field reversal. However, the IEADs and EEADs cannot easily be separately controlled. The control of IEADs and EEADs is inherently linked. The highest quality feature was obtained with a phase angle φ = 0° as this value generated the largest (most negative) DC self-bias and largest electric field reversal for accelerating electrons into the feature. That said, the consequences of voltage waveform tailoring (VWT) on etched features are dominated by the change in the IEADs. Although VWT does produce EEADs with higher energy and narrower angular spread, the effect of these electrons on the feature compared to thermal electrons is not large. Finally, this smaller impact of VWT produced EEADs is attributed to thermal electrons being accelerated into the feature by electric fields produced by the positive in-feature charging.

47 OTHER INSTRUMENTATION↗
DOE OSTI2021

Plasma generation by household microwave oven for surface modification and other emerging applications

A simple and inexpensive method to generate plasma using a kitchen microwave oven is described in this paper. The microwave-generated plasma is characterized by spectroscopic analysis and compared with the absorption spectra of a gas discharge tube. A Paschen-like curve is observed as the microwave plasma initiation time is plotted as a function of the pressure of the plasma chamber. We have also demonstrated that this microwave-generated air plasma can be used in a multitude of applications such as: (a) surface modification of a substrate to change its wettability; (b) surface modification to change electrical/optical properties of a substrate; and (c) enhancement of adhesive forces for improved bonding of polymeric microfluidic molds, such as bonding polydimethylsiloxane (PDMS) chips to glass covers. These simple techniques of plasma generation and subsequent surface treatment and modification applications may bring new opportunities leading to new innovations not only in advanced labs, but also in undergraduate and even high school research labs.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗