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At least 289 records · Page 16

Sensitivity and Detection Limit of Spectroscopic-Grade Perovskite CsPbBr 3 Crystal for Hard X-Ray Detection

We report spectroscopic-grade single crystal detectors can register the energies of individual X-ray interactions enabling photon-counting systems with superior resolution over traditional photoconductive X-ray detection systems. Current technical challenges have limited the preparation of perovskite semiconductors for energy-discrimination X-ray photon-counting detection. Here, this work reports the deployment of a spectroscopic-grade CsPbBr 3 Schottky detector under reverse bias for continuum hard X-ray detection in both the photocurrent and spectroscopic schemes. High surface barriers of approximate to ≈ 1 eV are formed by depositing solid bismuth and gold contacts. The spectroscopic response under a hard X-ray source is assessed in resolving the characteristic X-ray peak. The methodology in enhancing X-ray sensitivity by controlling the X-ray energies and flux, and voltage, is described. The X-ray sensitivity varies between a few tens to over 8000 μC Gy air -1 cm -2 . The detectable dose rate of the CsPbBr 3 detectors is as low as 0.02 nGy air s -1 in the energy discrimination configuration. Finally, the unbiased CsPbBr 3 device forms a spontaneous contact potential difference of about 0.7 V enabling high quality of the CsPbBr 3 single crystals to operate in "passive" self-powered X-ray detection mode and the X-ray sensitivity is estimated as 14 μC Gy air -1 cm -2 . The great potential of spectroscopic-grade CsPbBr 3 devices for X-ray photon-counting systems is anticipated in this work.

36 MATERIALS SCIENCE↗

Electrodynamic interactions

The electrodynamic interaction of long metallic tethers with the ionosphere is introduced. Due to the tether's motion across the Earth's field, a polarization electric field is generated along the tether. In a system like the Tethered Satellite System (TSS) where the tether is coated with dielectric and the electrical contact is between its two terminations and the ionosphere, the upper end termination will collect electrons and, in a passive system, the lower end termination will collect ions. Space charge regions will develop around the two terminations of the system, which can be at considerable potential with respect to the unperturbed ionospheric plasma and the current in the tether will be most significantly determined by local processes in such space charge regions. A qualitative view of the global perturbation induced by TSS in the ionosphere is outlined. One of the applications of electrodynamic tethers is that of using them as low frequency wave generators to communicate to the Earth. This application is briefly discussed. An equivalent circuit of the tether system is described. The basic equation of the circuit is given.

Dobrowolny, M.↗

An investigation to determine the producibility of a 3-D braider and bias direction weaving loom

The development of prototype machines for the production of generalized braid patterns is described. Mechanical operating principles and control strategies are presented for two prototype machines which were fabricated and evaluated. Both machines represent advances over current techniques for forming composite material preforms by enabling near ideal control of fiber orientation. Furthermore, they overcome both the lack of general control of produced fiber architectures and the complexity of other weaving processes that were produced for the same purpose. One prototype, the modified Farley braider, consists of an array of turntables which can be rotated 90 degrees and returned; hence, they can form tracks in the x and y axis. Yarn ends are transported about the surface formed by the turntables using motorized tractors. These tractors are controlled using an optical link with a control circuit and host computer. The tractors are powered through electrical contact with the turntables. The necessary relative motions are produced by a series of linear tractor moves combined with a sequence of turntable rotations. The movement of the tractors about the surface causes the yarns to produce the desired braiding pattern. The second device, the shuttle plate braider, consists of a braiding surface formed by an array of square elements, each separated from its neighbor by a gap. Beneath this surface lies a shuttle plate, which reciprocates first in one axis and then in the other. As this movement takes place, yarn carrying shuttles engage and disengage the plate by means of solenoid activated pins. By selective engagement and disengagement, the shuttles can move the yarn ends in any desired pattern, forming the desired braid. Control power, and control signals, are transmitted from the electronic interface circuit and host computer, via the braiding surface through electrical contact with the shuttles. Motive power is proved to the shuttles by motion of the shuttle plate, which is passively driven using pneumatic rams. Each shuttle is a simple device that uses only a solenoid to engage the plate and is a simple device that uses only a solenoid to engage the plate and is independently controllable. When compared with each other, the modified Farley braider has the advantage of speed, and the shuttle plate braider the advantage of mechanical control and simplicity.

Huey, Cecil O., Jr.↗

Improved Contacts for Tandem Cells with Enhanced Effciency Grown by D-HVPE

Dynamic hydride vapor phase epitaxy (D-HVPE) has provided a potential route towards lower cost material growth of III-V photovoltaic devices. A highly doped Ga0.5In0.5P emitter layer is grown in attempt to force passivation at the front of the cell to account for the absence of a suitable window layer in our reactor. Control over dopant diffusion in these materials is thus critical to achieving high-efficiency device performance. Here, we institute a two-step contact layer design that boosts tandem cell efficiencies by minimizing Se diffusion into the underlying emitter layer while still providing sufficiently low contact resistance. Short-circuit current in these devices improves to 8.9 mA/cm2 in an uncoated GaInP/GaAs cell, an improvement of 1.2 mA/cm2 over our previous best cell. Conversion efficiency with the new contact doping scheme is projected to be ~27% with the inclusion of a standard ARC layer.

27 ARPA - Advanced Research Projects Agency-Energy↗

Highly Efficient and Stable Perovskite Solar Cells Enabled by Low‐Cost Industrial Organic Pigment Coating

Abstract Surface passivation of perovskite solar cells (PSCs) using a low‐cost industrial organic pigment quinacridone (QA) is presented. The procedure involves solution processing a soluble derivative of QA, N , N ‐bis(tert‐butyloxycarbonyl)‐quinacridone (TBOC‐QA), followed by thermal annealing to convert TBOC‐QA into insoluble QA. With halide perovskite thin films coated by QA, PSCs based on methylammonium lead iodide (MAPbI 3 ) showed significantly improved performance with remarkable stability. A PCE of 21.1 % was achieved, which is much higher than 18.9 % recorded for the unmodified devices. The QA coating with exceptional insolubility and hydrophobicity also led to greatly enhanced contact angle from 35.6° for the pristine MAPbI 3 thin films to 77.2° for QA coated MAPbI 3 thin films. The stability of QA passivated MAPbI 3 perovskite thin films and PSCs were significantly enhanced, retaining about 90 % of the initial efficiencies after more than 1000 hours storage under ambient conditions.

He, Qingquan↗

Highly Efficient and Stable Perovskite Solar Cells Enabled by Low‐Cost Industrial Organic Pigment Coating

Abstract Surface passivation of perovskite solar cells (PSCs) using a low‐cost industrial organic pigment quinacridone (QA) is presented. The procedure involves solution processing a soluble derivative of QA, N , N ‐bis(tert‐butyloxycarbonyl)‐quinacridone (TBOC‐QA), followed by thermal annealing to convert TBOC‐QA into insoluble QA. With halide perovskite thin films coated by QA, PSCs based on methylammonium lead iodide (MAPbI 3 ) showed significantly improved performance with remarkable stability. A PCE of 21.1 % was achieved, which is much higher than 18.9 % recorded for the unmodified devices. The QA coating with exceptional insolubility and hydrophobicity also led to greatly enhanced contact angle from 35.6° for the pristine MAPbI 3 thin films to 77.2° for QA coated MAPbI 3 thin films. The stability of QA passivated MAPbI 3 perovskite thin films and PSCs were significantly enhanced, retaining about 90 % of the initial efficiencies after more than 1000 hours storage under ambient conditions.

He, Qingquan↗

Nanoscale Fabrication of Microwave Detectors from Commercially-Available CVD-Grown Monolayer Graphene

Using commercially-available monolayer graphene, synthesized by means of chemical vapor deposition, microwave power sensing elements have been nanofabricated and integrated with microwave-grade test structures suitable for on-wafer probing. The graphene, situated on a thermal oxide, was first cleaned of stray contaminants in a forming gas environment briefly held at 250 degrees Celsius using a rapid thermal annealer. Immediately following this step, the graphene was passivated with a protective aluminum oxide layer (approximately S nm in thickness). Micrometer-scale Corbino disc test structures were then fabricated in direct contact with the graphene using a self-aligned process, which relies on the fact that tetramethylammonium hydroxide develops the photoresist while removing the aluminum oxide. Graphene nanoribbons (with widths as small 400 nm) were then fabricated across the Corbino disc gaps using electron-beam writing in conjunction with a negative tone resist. The same developer exposed the majority of the graphene while defining nanometer-scale lines of photoresist stacked upon aluminum oxide. These stacks served as etch-stops while the unprotected graphene was ion-milled in an oxygen plasma. Finally, the photoresist was removed leaving behind passivated graphene nanoribbons. Damage caused by the fabrication was evaluated by comparing the Raman spectra of the grapheme before and after processing.

detectors↗

High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors

AlGaN polarization-doped field-effect transistors were characterized by DC and pulsed measurements from room temperature to 500 °C in ambient. DC current-voltage characteristics demonstrated only a 70% reduction in on-state current from 25 to 500 °C and full gate modulation, regardless of the operating temperature. Near ideal gate lag measurement was realized across the temperature range that is indicative of a high-quality substrate and sufficient surface passivation. The ability for operation at high temperature is enabled by the high Schottky barrier height from the Ni/Au gate contact, with values of 2.05 and 2.76 eV at 25 and 500 °C, respectively. The high barrier height due to the insulatorlike aluminum nitride layer leads to an ION/IOFF ratio of 1.5 × 10 9 and 6 × 10 3 at room temperature and 500 °C, respectively. Transmission electron microscopy was used to confirm the stability of the heterostructure even after an extended high-temperature operation with only minor interdiffusion of the Ni/Au Schottky contact. The use of refractory metals in all contacts will be key to ensure a stable extended high-temperature operation.

36 MATERIALS SCIENCE↗

Impact of undoped substrates on high performance silicon solar cells

Today's highest-efficiency silicon solar cells typically operate near the threshold between low-level and high-level injection. It is not well understood if pushing further into a regime in which the cell operating point is solidly in high-level injection at all times of the day has further benefits for the solar cell performance. From a reliability perspective, cells fabricated on lower doped silicon have a larger breakdown voltage. This advantage can affect the design of modules allowing higher voltages and a relaxation of the number of bypass diodes needed. In this project, we present a comprehensive assessment, both experimental and using simulation, of how bulk resistivity, light intensity, and operation temperature impact the performance of the silicon solar cell. This work incorporates a comprehensive device physics analysis assisted by numerical simulation. The source code is now available under General Public License (GPL3), and to further leverage the findings of this project and outreach people outside of the scientific community, we are working with www.pveducation.org (which receives >1 million visitors a year) to create interactive content using our simulation results. The simulation results indicate that high bulk resistivity wafers (>>10 Ωcm) require bulk Shockley-Read-Hall (SRH) lifetimes in the millisecond range to outperform wafers with standard bulk resistivities (<10 Ωcm). Additionally, above bulk resistivities of 10 Ωcm (the exact value depends on the bulk characteristics of the wafer), the cell efficiency is weakly dependent on the bulk resistivity. As a result, ingot manufactures may have an opportunity to further reduce wafer cost by growing higher resistivity ingots that are more tolerant to resistivity variations. This project is particularly relevant today, as solar cell architectures with improved surface passivation and milliseconds lifetimes wafers are commercially available, leveraging potential benefits of using higher bulk resistivities. Outside of interdigitated back contact (IBC) cell, reported studies on high resistivity silicon (>100 Ωcm) are very limited. To the best of our knowledge, this project provides for the first-time experimental insight on solar cells fabricated on wafers with bulk resistivities up to several thousand Ωcm, delivering a comprehensive vision of their performance under real-world temperature and light intensity operation conditions. We manufactured and characterized solar cells with bulk resistivities in the range of 1 Ωcm to >15k Ωcm. Under standard testing conditions (STC), we measured solar cells efficiencies over 20% over the entire range of bulk resistivities, using our baseline cell processing. To evaluate the cell performance in real-world operation conditions, the solar cells were measured at different temperatures (25-80°C) and at different light intensities (0.1-1 suns). The measurements show that the bulk resistivity does not impact the solar cell response to temperature and light intensity. Similar thermal coefficients (TC) were measured for standard and high bulk resistivities, and they are comparable with the TC values reported in the literature for standard bulk resistivities <10 Ωcm. After light soaking, the solar cell didn’t show signs of light-induced degradation (LID). This result was expected since n-type float zone (FZ) wafers were used in this work, i.e. low traces of boron and low concentration of oxygen (oxygen is typically found in the seed end of Czochralski (CZ) ingots). We measured for high bulk resistivities (>10 Ωcm) extremely high breakdown voltages (>1000V). In conclusion, the insight provided by this project can positively impact the levelized cost of energy (LCOE) of the photovoltaic systems through its effect on cell and ingot manufacturing yield, silicon cell power output, and module reliability.

14 SOLAR ENERGY↗

Passive millimeter wave radiometer system for calibration of infrared cameras

An apparatus for accurate measurement of surface and sub-surface temperatures of an object from a distance without contacting the object is provided. Illustrative embodiments provide for simultaneous measurement of thermal emission and emissivity in the mm-wave regime thereby enabling real-time non-contact measurement of emissivity. Corrected temperatures for the object which may be used for calibration of infrared thermographic cameras are determined from the measurement of emissivity.

Murphy, Ryan D.↗

In-Home Mobility Frequency and Stability in Older Adults Living Alone With or Without MCI: Introduction of New Metrics

Background: Older adults spend a considerable amount of time inside their residences; however, most research investigates out-of-home mobility and its health correlates. We measured indoor mobility using room-to-room transitions, tested their psychometric properties, and correlated indoor mobility with cognitive and functional status. Materials and Methods: Community-dwelling older adults living alone ( n = 139; age = 78.1 ± 8.6 years) from the Oregon Center for Aging & Technology (ORCATECH) and Minority Aging Research Study (MARS) were included in the study. Two indoor mobility features were developed using non-parametric parameters (frequency; stability): Indoor mobility frequency (room-to-room transitions/day) was detected using passive infrared (PIR) motion sensors fixed on the walls in four geographic locations (bathroom; bedroom; kitchen; living room) and using door contact sensors attached to the egress door in the entrance. Indoor mobility stability was estimated by variances of number of room-to-room transitions over a week. Test-retest reliability (Intra-class coefficient, ICC) and the minimal clinically important difference (MCID) defined as the standard error of measurement (SEM) were generated. Generalized estimating equations models related mobility features with mild cognitive impairment (MCI) and functional status (gait speed). Results: An average of 206 days (±127) of sensor data were analyzed per individual. Indoor mobility frequency and stability showed good to excellent test-retest reliability (ICCs = 0.91[0.88–0.94]; 0.59[0.48–0.70]). The MCIDs of mobility frequency and mobility stability were 18 and 0.09, respectively. On average, a higher indoor mobility frequency was associated with faster gait speed (β = 0.53, p = 0.04), suggesting an increase of 5.3 room-to-room transitions per day was associated with an increase of 10 cm/s gait speed. A decrease in mobility stability was associated with MCI (β = −0.04, p = 0.03). Discussion: Mobility frequency and stability in the home are clinically meaningful and reliable features. Pervasive-sensing systems deployed in homes can objectively reveal cognitive and functional status in older adults who live alone.

Wu, Chao-Yi↗

Brushless direct-current motor with stationary armature and field

Electronically commutated dc motor has an active fixed field winding, and active fixed armature winding, and passive rotor. By use of brushless dc motor switching technique, motor provides continuous controllable and reversible torque without use of sliding contacts.

Studer, P. A.↗

Connection space reduction mechanism

A connector assembly comprised of two halves, each respectively including a shell type connector subassembly, one being an active half and the other being a passive half is described. The active half includes an alignment cusp that causes a coupling motion in response to coming in contact with the outer portion of the other half, which causes the respective connectors within the two subassemblies to move toward each other into coupling relationship at twice the rate at which the two subassemblies come together. Both halves are adapted to rotate about and translate along respective mutually orthogonal axes to facilitate an interconnection.

Milam, Malcolm Bruce↗

The Robotic All-Terrain Lunar Exploration Rover (RATLER): Increased mobility through simplicity

A new concept mobility chassis for a robotic rover is described which is inherently simple with few moving parts or complex linkages. The RATLER design utilizes a four-wheel drive, skid steered propulsion system in conjunction with passive articulation of the dual body vehicle. This uniquely simple method of chassis articulation allows all four wheels to remain in contact with the ground even while climbing obstacles as large as 1.3 wheel diameters. A prototype mobility platform was built which is approximately 1 m(sup 2) with 0.5 m diameter wheels and all-wheel electric drive. The theoretical mobility limitations are discussed and compared with the results of field trials of the prototype platform. The theoretical model contrasted with measured performance is then used to predict the expected mobility of the RATLER design on the Lunar surface.

Pletta, J. Bryan↗

Thermal analysis of RHIC arc dipole magnet cold mass with EIC beam screen

The existing RHIC storage rings – including their superconducting magnet arcs – will be used for the hadron storage ring of the Electron-Ion Collider (EIC). The vacuum chamber of these magnets was not designed for the EIC hadron beams, with shorter bunches and of higher average current than the RHIC beams. With the current stainless steel beam pipe, the resistive-wall (RW) heating will exceed the dynamic heat load budget. Limiting the RW heating is important to prevent the superconducting magnets from quenching and to maintain a low screen temperature necessary to impede the rise of RW heating (higher resistance at higher temperature) as well as to achieve desired ultra-high vacuum. In addition, simulations predict the formation of electron cloud which would further contribute to the dynamic heat load and could compromise the quality and stability of the beam. To reduce the resistive-wall heating and suppress electron cloud, a beam screen will be installed in the vacuum chamber of the RHIC SC magnets. The screen will have a high RRR copper layer at its inner face – useful to reduce the resistive-wall impedance thanks to its high conductivity especially at cryogenic temperatures – and will be coated with a thin layer of amorphous carbon, a material with low secondary electron yield to suppress the formation of electron clouds. The baseline solution envisages a screen that will be cooled by thermal contact to the 4.55 K beam pipe. Detailed thermal analysis have been conducted in ANSYS 2020 for an arc dipole cold mass equipped with a beam screen in order to study the feasibility of a passively-cooled screen and guide its design. Temperature-dependent thermal conductivity properties of all materials in the operating (cryogenic) temperature range are considered. Suitable assumptions and simplifications are made to model the magnet coil and calculate its homogenized thermal conductivity. Sensitivity studies with respect to layer thicknesses and area of contact are carried out and results are presented.

43 PARTICLE ACCELERATORS↗

Insights into the mechanisms controlling the residual corrosion rate of borosilicate glasses

Borosilicate glasses are widely used to confine high-level radioactive wastes. The lifetime of these materials could reach hundreds of thousands of years if leaching of the glass into groundwater enables the formation of a passivating gel layer. Even in this regime, the glass will never stop corroding as thermodynamic equilibrium between glass and solution cannot be achieved. Therefore, accurate predictions of glass durability including passivation, require a deep understanding of the mechanisms controlling the so-called residual rate. However, despite tremendous efforts, these mechanisms remain poorly understood. Here, focusing on the behavior of the soluble elements of the International Simple Glass (B, Na, and Ca), we show that the residual rate is controlled by the behavior of B, a glass former supposed to dissolve instantaneously when in contact with water and thus widely considered as an ideal tracer. We then demonstrate that B release is controlled by multiple processes highly dependent on the pH. At the beginning of the passivating layer formation, the hydrolysis of B-O-Si linkages is rate-limiting and has an activation energy of ~60 kJ mol –1 , a value slightly lower than that for breaking Si-O-Si linkages. Once the fraction of closed pores resulting from gel restructuring is high enough, then diffusion of both reactants (water molecules) and some products (mainly B aq , Ca aq ) through the growing gel layer becomes rate-limiting. Consequently, B and Ca accumulate in an inner layer referred to as the active zone, with potential feedback on the B-O-Si hydrolysis. A new paradigm, including B as a key element of the system, is proposed to develop a comprehensive model for the corrosion of borosilicate glass.

36 MATERIALS SCIENCE↗

Comparison of passivation properties of plasma-assisted ALD and APCVD deposited Al 2 O 3 with SiN x capping

In this paper, we report on the direct comparison of Al 2 O 3 films deposited by plasma-assisted atomic layer deposition (ALD) and atmospheric pressure chemical vapor deposition (APCVD) techniques on the passivation properties of both bare and boron diffused Si surfaces. It is found that ALD and APCVD deposited Al 2 O 3 layers with SiN x capping have very similar chemical composition, hydrogen concentration at the Al 2 O 3 /Si interface, and interface defect density (D it ), but the ALD film has slightly higher negative fixed charge (Q f ) after a high temperature (~750 °C) contact firing cycle typically used for solar cell fabrication. Both films showed excellent surface recombination velocities of <5 cm/s on planar and textured un-diffused Si wafers, but the ALD films gave 1 to 8 fA/cm 2 lower emitter saturation current densities (J 0e ) on implanted boron emitters with sheet resistance in the range of 90–180 Ω/. This is attributed to the observed slightly higher negative charge-induced field-effect passivation in the ALD films. However, SiN x /Al 2 O 3 /p + /n/n + passivated emitter rear totally diffused (PERT) cell structures fabricated with 110 and 150 Ω/ emitter in this study showed no appreciable difference in cell efficiency. Device analysis and simulations showed that even for >23% high-performance solar cells design, with very low bulk and rear contact recombination, the observed small difference in J 0e has negligible effect on cell efficiency. Furthermore, APCVD Al 2 O 3 passivation of B emitter can produce comparable efficiencies to their counterpart ALD Al 2 O 3 passivated n-type Si solar cells.

14 SOLAR ENERGY↗

Active heat exchange system development for latent heat thermal energy storage

Various active heat exchange concepts were identified from among three generic categories: scrapers, agitators/vibrators and slurries. The more practical ones were given a more detailed technical evaluation and an economic comparison with a passive tube-shell design for a reference application (300 MW sub t storage for 6 hours). Two concepts were selected for hardware development: (1) a direct contact heat exchanger in which molten salt droplets are injected into a cooler counterflowing stream of liquid metal carrier fluid, and (2) a rotating drum scraper in which molten salt is sprayed onto the circumference of a rotating drum, which contains the fluid salt is sprayed onto the circumference of a rotating drum, which contains the fluid heat sink in an internal annulus near the surface. A fixed scraper blade removes the solidified salt from the surface which was nickel plated to decrease adhesion forces. In addition to improving performance by providing a nearly constant transfer rate during discharge, these active heat exchanger concepts were estimated to cost at least 25% less than the passive tube-shell design.

Alario, J.↗